CN104961468A - TiAlN ceramic substrate for LED (light emitting diode) - Google Patents
TiAlN ceramic substrate for LED (light emitting diode) Download PDFInfo
- Publication number
- CN104961468A CN104961468A CN201510396696.9A CN201510396696A CN104961468A CN 104961468 A CN104961468 A CN 104961468A CN 201510396696 A CN201510396696 A CN 201510396696A CN 104961468 A CN104961468 A CN 104961468A
- Authority
- CN
- China
- Prior art keywords
- parts
- ceramic substrate
- oxide
- led
- tialn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention discloses a TiAlN ceramic substrate for an LED (light emitting diode), various raw materials in an LTCC (low temperature co-fired ceramic) preparation process are optimized, TiAlN is used as the main raw material, meanwhile, additives such as AlN, Al2O3 micropowder, MCM-41 molecular sieve, SiC, glass sintering aid, ferro-nano particles, rare earth oxide, solvent, plasticizer, dispersant and binder are added, the physical and chemical properties of the ceramic substrate is further optimized, heat conductivity of the ceramic substrate is larger than 1000W/(m.k), bending resistance is larger than 500Mpa, and a dielectric constant is smaller than 3. Meanwhile, through a conventional LTCC preparation method, the main raw material and the additives can be prepared into the ceramic substrate with high conductance, and the preparation process is simple and favorable for industrialization.
Description
Technical field
The invention belongs to LED substrate field, particularly a kind of LED TiAlN ceramic substrate.
Background technology
As forth generation lighting source, photodiode (LED) is low with its maintenance cost, the life-span is long, shock resistance good, power consumption is little and the advantage such as environmental friendliness and be subject to the attention of countries in the world, be widely used in pilot lamp, display screen, backlight, Landscape Lighting, traffic etc., market potential is huge.
Along with the demand of LED illumination is increasingly urgent, the heat dissipation problem of great power LED comes into one's own (too high temperature can cause LED luminous efficiency to decay) increasingly; If LED uses the used heat produced effectively to shed, then can cause fatefulue impact to the life-span of LED.Present stage, more general ceramic heat-dissipating substrate had 4 kinds: directly cover copper ceramic plate (DBC), direct copper plating substrate (DPC), high temperature co-firing multilayer ceramic substrate (HTCC) and low temperature co-fired multilayer ceramic substrate (LTCC).And the LED ceramic baseplate how designing a kind of superior performance especially perfect heat-dissipating is a difficult problem for research now.
Summary of the invention
The object of the invention is for the problems referred to above, develop a kind of LED TiAlN ceramic substrate of perfect heat-dissipating:
A kind of LED TiAlN ceramic substrate, is made up of following component and weight part thereof: TiAlN 70-90 part; Aluminium nitride 4-11 part; Alumina powder 4-11 part; MCM-41 molecular sieve 4-11 part; Silicon carbide 4-11 part; Glass sintering auxiliary agent 4-11 part; Iron nano-particle 4-11 part; Rare earth oxide 2-5 part; Organic solvent 4-11 part; Softening agent 1-5 part; Dispersion agent 1-5 part; Binding agent 1-5 part;
The weight of described glass sintering auxiliary agent consists of silicon oxide 70 parts; Boron oxide 10 parts; Beryllium oxide 10 parts; 10 parts, calcium oxide; 5 parts, aluminum oxide; Vanadium Pentoxide in FLAKES 3 parts; Lithium Oxide 98min 3 parts; Sodium oxide 3 parts;
Described rare earth oxide is one or more that particle diameter is less than Y2O3, La2O3, Yb2O3 and Eu2O3 of 1 μm;
Described organic solvent is acetone, Virahol two end number mixing organic solvent system;
Described dispersion agent is PEG dispersion agent;
Described binding agent is PVB binding agent;
The particle diameter of iron nano-particle is 5-70 nanometer;
The preparation method of iron nano-particle is hydrothermal method;
The preparation method of glass sintering auxiliary agent is, by the mixing raw materials of each oxide compound, grinding, mixes and is placed in crucible, in 1450 ~ 1550 DEG C of insulation 3h melting, pours quenching in distilled water into, obtains beads.Broken after being dried by beads, grinding, obtains glass sintering auxiliary agent.
The particle diameter of glass sintering auxiliary agent is less than 0.5 μm.
Ceramic substrate adopts LTCC preparation method.
Concrete grammar is, preparation-slurry preparation-curtain coating-section-forming through holes-filling through hole-printing-lamination-lamination-binder removal-sintering-detection.
Beneficial effect of the present invention:
(1) generally speaking, optimize the various raw materials in LTCC preparation technology, the TiAlN be close using thermal conductivity higher and the coefficient of expansion and Si sheet is as main raw material, simultaneously, in order to regulate the deficiency of TiAlN in thermal conductivity and stability, the present invention adopts aluminium nitride as main raw material further, simultaneously in order to optimize the physical and chemical performance of ceramic substrate further, also added alumina powder, MCM-41 molecular sieve, silicon carbide, glass sintering auxiliary agent, iron nano-particle, rare earth oxide, organic solvent, softening agent, the additive such as dispersion agent and binding agent, the ceramic substrate thermal conductivity of the application is greater than 1100W/ (mk), and bending strength is greater than 500Mpa, and specific inductivity is less than 3.By the LTCC preparation method of routine, main raw material and additive can be prepared into the ceramic substrate with high conductance, preparation technology is simple, is beneficial to industrialization.
(2) specifically, using TiAlN and aluminium nitride as main raw material, the auxiliary interpolation of alumina powder, MCM-41 molecular sieve, comprehensively reduces cost, but still maintains excellent heat dispersion.And the use of MCM-41 molecular sieve, owing to forming certain passage of heat in stupalith, also substantially increase the heat-conducting effect of substrate.In additive, the application, by adding iron nano-particle, carries out metal nanoparticle to ceramic powder, meanwhile, adding of nano particle, is conducive to improving heat trnasfer, meanwhile, also improves the density of ceramic substrate.And the glass sintering auxiliary agent of the application's uniqueness and rare earth oxide, can form crystal with main component materials, the one-tenth porcelain performance then for ceramic substrate also can strengthen greatly.
Embodiment
Below in conjunction with specific embodiment, and comparable data describes in further detail the present invention.Should be understood that these embodiments just in order to demonstrate the invention, but not limit the scope of the invention by any way.
Embodiment 1:
A kind of LED TiAlN ceramic substrate, be made up of following component and weight part thereof:
TiAlN 80 parts; Aluminium nitride 4 parts; Alumina powder 4 parts; 4 parts, MCM-41 molecular sieve; Glass sintering auxiliary agent 4 parts; Iron nano-particle 4 parts; Rare earth oxide 3 parts; Organic solvent 4 parts; 1 part, softening agent; Dispersion agent 1 part; Binding agent 1 part;
The weight of described glass sintering auxiliary agent consists of silicon oxide 70 parts; Boron oxide 10 parts; Beryllium oxide 10 parts; 10 parts, calcium oxide; 5 parts, aluminum oxide; Vanadium Pentoxide in FLAKES 3 parts; Lithium Oxide 98min 3 parts; Sodium oxide 3 parts;
Described rare earth oxide is the Y that particle diameter is less than 1 μm
2o
3;
Described organic solvent is acetone, Virahol two end number mixing organic solvent system;
Described dispersion agent is PEG dispersion agent;
Described binding agent is PVB binding agent;
The particle diameter of iron nano-particle is 10 nanometers.
The preparation method of iron nano-particle is hydrothermal method.
The preparation method of glass sintering auxiliary agent is, by the mixing raw materials of each oxide compound, grinding, mixes and is placed in crucible, in 1450 DEG C of insulation 3h melting, pours quenching in distilled water into, obtains beads.Broken after being dried by beads, grinding, obtains glass sintering auxiliary agent.
The particle diameter of glass sintering auxiliary agent is less than 0.5 μm.
Ceramic substrate adopts LTCC preparation method.
Concrete grammar is, preparation-slurry preparation-curtain coating-section-forming through holes-filling through hole-printing-lamination-lamination-binder removal-sintering-detection.
This ceramic substrate thermal conductivity is 1250W/ (mk), and bending strength is 560Mpa, and specific inductivity is 2.7.
Embodiment 2:
A kind of LED TiAlN ceramic substrate, is made up of following component and weight part thereof: TiAlN 85 parts; Aluminium nitride 11 parts; Alumina powder 11 parts; 11 parts, MCM-41 molecular sieve; Glass sintering auxiliary agent 9 parts; Iron nano-particle 6 parts; Rare earth oxide 4 parts; Organic solvent 11 parts; 2 parts, softening agent; Dispersion agent 2 parts; Binding agent 2 parts;
The weight of described glass sintering auxiliary agent consists of silicon oxide 70 parts; Boron oxide 10 parts; Beryllium oxide 10 parts; 10 parts, calcium oxide; 5 parts, aluminum oxide; Vanadium Pentoxide in FLAKES 3 parts; Lithium Oxide 98min 3 parts; Sodium oxide 3 parts;
Described rare earth oxide is the La that particle diameter is less than 1 μm
2o
3;
Described organic solvent is acetone, Virahol two end number mixing organic solvent system;
Described dispersion agent is PEG dispersion agent;
Described binding agent is PVB binding agent;
The particle diameter of iron nano-particle is 15 nanometers.
The preparation method of iron nano-particle is hydrothermal method.
The preparation method of glass sintering auxiliary agent is, by the mixing raw materials of each oxide compound, grinding, mixes and is placed in crucible, in 1500 DEG C of insulation 3h melting, pours quenching in distilled water into, obtains beads.Broken after being dried by beads, grinding, obtains glass sintering auxiliary agent.
The particle diameter of glass sintering auxiliary agent is less than 0.5 μm.
Ceramic substrate adopts LTCC preparation method.
Concrete grammar is, preparation-slurry preparation-curtain coating-section-forming through holes-filling through hole-printing-lamination-lamination-binder removal-sintering-detection.
This ceramic substrate thermal conductivity is 1320W/ (mk), and bending strength is 575Mpa, and specific inductivity is 2.4.
Embodiment 3:
A kind of LED TiAlN ceramic substrate, is made up of following component and weight part thereof: TiAlN 74 parts; Aluminium nitride 6 parts; Alumina powder 6 parts; 6 parts, MCM-41 molecular sieve; Glass sintering auxiliary agent 6 parts; Iron nano-particle 6 parts; Rare earth oxide 4 parts; Organic solvent 11 parts; 1 part, softening agent; Dispersion agent 1 part; Binding agent 1 part;
The weight of described glass sintering auxiliary agent consists of silicon oxide 70 parts; Boron oxide 10 parts; Beryllium oxide 10 parts; 10 parts, calcium oxide; 5 parts, aluminum oxide; Vanadium Pentoxide in FLAKES 3 parts; Lithium Oxide 98min 3 parts; Sodium oxide 3 parts;
Described rare earth oxide is the Yb that particle diameter is less than 1 μm
2o
3;
Described organic solvent is acetone, Virahol two end number mixing organic solvent system;
Described dispersion agent is PEG dispersion agent;
Described binding agent is PVB binding agent;
The particle diameter of iron nano-particle is 17 nanometers.
The preparation method of iron nano-particle is hydrothermal method.
The preparation method of glass sintering auxiliary agent is, by the mixing raw materials of each oxide compound, grinding, mixes and is placed in crucible, in 1450 DEG C of insulation 3h melting, pours quenching in distilled water into, obtains beads.Broken after being dried by beads, grinding, obtains glass sintering auxiliary agent.
The particle diameter of glass sintering auxiliary agent is less than 0.5 μm.
Ceramic substrate adopts LTCC preparation method.
Concrete grammar is, preparation-slurry preparation-curtain coating-section-forming through holes-filling through hole-printing-lamination-lamination-binder removal-sintering-detection.
This ceramic substrate thermal conductivity is 1295W/ (mk), and bending strength is 518Mpa, and specific inductivity is 2.8.
Embodiment 4:
A kind of LED TiAlN ceramic substrate, is made up of following component and weight part thereof: TiAlN 89 parts; Aluminium nitride 9 parts; Alumina powder 9 parts; 9 parts, MCM-41 molecular sieve; Glass sintering auxiliary agent 4 parts; Iron nano-particle 6 parts; Rare earth oxide 4 parts; Organic solvent 11 parts; 2 parts, softening agent; Dispersion agent 1 part; Binding agent 2 parts;
The weight of described glass sintering auxiliary agent consists of silicon oxide 70 parts; Boron oxide 10 parts; Beryllium oxide 10 parts; 10 parts, calcium oxide; 5 parts, aluminum oxide; Vanadium Pentoxide in FLAKES 3 parts; Lithium Oxide 98min 3 parts; Sodium oxide 3 parts;
Described rare earth oxide is the Eu that particle diameter is less than 1 μm
2o
3;
Described organic solvent is acetone, Virahol two end number mixing organic solvent system;
Described dispersion agent is PEG dispersion agent;
Described binding agent is PVB binding agent;
The particle diameter of iron nano-particle is 7 nanometers.
The preparation method of iron nano-particle is hydrothermal method.
The preparation method of glass sintering auxiliary agent is, by the mixing raw materials of each oxide compound, grinding, mixes and is placed in crucible, in 1520 DEG C of insulation 3h melting, pours quenching in distilled water into, obtains beads.Broken after being dried by beads, grinding, obtains glass sintering auxiliary agent.
The particle diameter of glass sintering auxiliary agent is less than 0.5 μm.
Ceramic substrate adopts LTCC preparation method.
Concrete grammar is, preparation-slurry preparation-curtain coating-section-forming through holes-filling through hole-printing-lamination-lamination-binder removal-sintering-detection.
This ceramic substrate thermal conductivity is 1355W/ (mk), and bending strength is 555Mpa, and specific inductivity is 2.5.
Embodiment 5:
A kind of LED TiAlN ceramic substrate, is made up of following component and weight part thereof: TiAlN 71 parts; Aluminium nitride 6 parts; Alumina powder 6 parts; 6 parts, MCM-41 molecular sieve; Glass sintering auxiliary agent 5 parts; Iron nano-particle 6 parts; Rare earth oxide 4 parts; Organic solvent 11 parts; 2 parts, softening agent; Dispersion agent 2 parts; Binding agent 2 parts;
The weight of described glass sintering auxiliary agent consists of silicon oxide 70 parts; Boron oxide 10 parts; Beryllium oxide 10 parts; 10 parts, calcium oxide; 5 parts, aluminum oxide; Vanadium Pentoxide in FLAKES 3 parts; Lithium Oxide 98min 3 parts; Sodium oxide 3 parts;
Described rare earth oxide is the Y that particle diameter is less than 1 μm
2o
3and Eu
2o
3;
Described organic solvent is acetone, Virahol two end number mixing organic solvent system;
Described dispersion agent is PEG dispersion agent;
Described binding agent is PVB binding agent;
The particle diameter of iron nano-particle is 10 nanometers.
The preparation method of iron nano-particle is hydrothermal method.
The preparation method of glass sintering auxiliary agent is, by the mixing raw materials of each oxide compound, grinding, mixes and is placed in crucible, in 1510 DEG C of insulation 3h melting, pours quenching in distilled water into, obtains beads.Broken after being dried by beads, grinding, obtains glass sintering auxiliary agent.
The particle diameter of glass sintering auxiliary agent is less than 0.5 μm.
Ceramic substrate adopts LTCC preparation method.
Concrete grammar is, preparation-slurry preparation-curtain coating-section-forming through holes-filling through hole-printing-lamination-lamination-binder removal-sintering-detection.
This ceramic substrate thermal conductivity is 1320W/ (mk), and bending strength is 515Mpa, and specific inductivity is 2.0.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present invention or essential characteristic, the present invention can be realized in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present invention is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the present invention.
In addition, be to be understood that, although this specification sheets is described according to embodiment, but not each embodiment only comprises an independently technical scheme, this narrating mode of specification sheets is only for clarity sake, those skilled in the art should by specification sheets integrally, and the technical scheme in each embodiment also through appropriately combined, can form other embodiments that it will be appreciated by those skilled in the art that.
Claims (7)
1. a LED TiAlN ceramic substrate, is characterized in that: be made up of following component and weight part thereof: TiAlN 70-90 part; Aluminium nitride 4-11 part; Alumina powder 4-11 part; MCM-41 molecular sieve 4-11 part; Silicon carbide 4-11 part; Glass sintering auxiliary agent 4-11 part; Iron nano-particle 4-11 part; Rare earth oxide 2-5 part; Organic solvent 4-11 part; Softening agent 1-5 part; Dispersion agent 1-5 part; Binding agent 1-5 part;
The weight of described glass sintering auxiliary agent consists of silicon oxide 70 parts; Boron oxide 10 parts; Beryllium oxide 10 parts; 10 parts, calcium oxide; 5 parts, aluminum oxide; Vanadium Pentoxide in FLAKES 3 parts; Lithium Oxide 98min 3 parts; Sodium oxide 3 parts;
Described rare earth oxide is the Y that particle diameter is less than 1 μm
2o
3, La
2o
3, Yb
2o
3and Eu
2o
3one or more;
Described organic solvent is acetone, Virahol two end number mixing organic solvent system;
Described dispersion agent is PEG dispersion agent;
Described binding agent is PVB binding agent.
2. a LED TiAlN ceramic substrate as claimed in claim 1, is characterized in that: the particle diameter of iron nano-particle is 5-70 nanometer.
3. a LED TiAlN ceramic substrate as claimed in claim 1 or 2, is characterized in that: the preparation method of iron nano-particle is hydrothermal method.
4. the TiAlN ceramic substrate of the LED as described in claim 1 or 3, it is characterized in that: the preparation method of glass sintering auxiliary agent is, by the mixing raw materials of each oxide compound, grinding, mix and be placed in crucible, in 1450 ~ 1550 DEG C of insulation 3h melting, pour quenching in distilled water into, obtain beads.Broken after being dried by beads, grinding, obtains glass sintering auxiliary agent.
5. a LED TiAlN ceramic substrate as claimed in claim 4, is characterized in that: the particle diameter of glass sintering auxiliary agent is less than 0.5 μm.
6. the LED TiAlN ceramic substrate as described in claim 1 or 2 or 4, is characterized in that: ceramic substrate adopts LTCC preparation method.
7. a LED TiAlN ceramic substrate as claimed in claim 6, is characterized in that: concrete grammar is, preparation-slurry preparation-curtain coating-section-forming through holes-filling through hole-printing-lamination-lamination-binder removal-sintering-detection.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510396696.9A CN104961468A (en) | 2015-07-08 | 2015-07-08 | TiAlN ceramic substrate for LED (light emitting diode) |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510396696.9A CN104961468A (en) | 2015-07-08 | 2015-07-08 | TiAlN ceramic substrate for LED (light emitting diode) |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104961468A true CN104961468A (en) | 2015-10-07 |
Family
ID=54215596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510396696.9A Pending CN104961468A (en) | 2015-07-08 | 2015-07-08 | TiAlN ceramic substrate for LED (light emitting diode) |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104961468A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105367068A (en) * | 2015-10-27 | 2016-03-02 | 合肥龙多电子科技有限公司 | High-density high-heat-conduction aluminum nitride-silicon carbide-based composite circuit board substrate material containing micro-crystal ceramic powder and preparation method thereof |
CN105506624A (en) * | 2015-12-22 | 2016-04-20 | 北京大学东莞光电研究院 | Film plating method of aluminium nitride ceramic substrate |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010016349A (en) * | 2008-06-06 | 2010-01-21 | Mitsubishi Materials Corp | Power module substrate, power module, and method of manufacturing power module substrate |
CN102569625A (en) * | 2012-01-05 | 2012-07-11 | 中国计量学院 | Copper line-clad aluminum silicon carbide ceramic substrate applicable to radiation of high-power LED |
CN103803984A (en) * | 2013-12-30 | 2014-05-21 | 莱鼎电子材料科技有限公司 | Method for preparing aluminum nitride ceramic substrate by adopting composite powder grain shape |
CN104058772A (en) * | 2014-03-20 | 2014-09-24 | 汕头大学 | Ceramic composite material substrate and manufacturing technology thereof |
CN104244486A (en) * | 2014-09-04 | 2014-12-24 | 王晨 | Re-alsic-rare-earth-aluminum-silicon-carbide-based LED rare earth thick film circuit electric light source device |
-
2015
- 2015-07-08 CN CN201510396696.9A patent/CN104961468A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010016349A (en) * | 2008-06-06 | 2010-01-21 | Mitsubishi Materials Corp | Power module substrate, power module, and method of manufacturing power module substrate |
CN102569625A (en) * | 2012-01-05 | 2012-07-11 | 中国计量学院 | Copper line-clad aluminum silicon carbide ceramic substrate applicable to radiation of high-power LED |
CN103803984A (en) * | 2013-12-30 | 2014-05-21 | 莱鼎电子材料科技有限公司 | Method for preparing aluminum nitride ceramic substrate by adopting composite powder grain shape |
CN104058772A (en) * | 2014-03-20 | 2014-09-24 | 汕头大学 | Ceramic composite material substrate and manufacturing technology thereof |
CN104244486A (en) * | 2014-09-04 | 2014-12-24 | 王晨 | Re-alsic-rare-earth-aluminum-silicon-carbide-based LED rare earth thick film circuit electric light source device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105367068A (en) * | 2015-10-27 | 2016-03-02 | 合肥龙多电子科技有限公司 | High-density high-heat-conduction aluminum nitride-silicon carbide-based composite circuit board substrate material containing micro-crystal ceramic powder and preparation method thereof |
CN105506624A (en) * | 2015-12-22 | 2016-04-20 | 北京大学东莞光电研究院 | Film plating method of aluminium nitride ceramic substrate |
CN105506624B (en) * | 2015-12-22 | 2018-01-16 | 北京大学东莞光电研究院 | A kind of film plating process of aluminum nitride ceramic substrate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104926314A (en) | Ceramic substrate for LEDs | |
CN103204692B (en) | Novel lightweight mullite brick and fabrication method thereof | |
CN104763901B (en) | Led daylight lamp | |
CN104987065A (en) | Zirconia ceramic substrate for LED | |
CN105419672A (en) | Preparation method of high-heat-dissipation electric-conductive glue used for high-power LED | |
Zhu et al. | Synthesis of Y 3 Al 5 O 12: Eu 2+ Phosphor by a Facile Hydrogen Iodide‐AssistedSol–Gel Method | |
Xu et al. | Tunable chromaticity and enhanced luminous efficacy of white LEDs with phosphor-in-glass coating via multilayer screen-printing | |
Li et al. | Phosphor‐in‐silica‐glass: filling the gap between low‐and high‐brightness solid‐state lightings | |
CN104961468A (en) | TiAlN ceramic substrate for LED (light emitting diode) | |
CN105039820A (en) | Aluminum-silicon carbide ceramic substrate for LED | |
CN104861862A (en) | Heat-dissipating coating for LED lamp and preparation method thereof | |
Jin et al. | Targeting cooling for YAG: Ce3+-based laser-driven lighting device by blending high thermal conductivity AlN in phosphor-sapphire composite | |
CN102503382A (en) | Al2O3 ceramic material for LED radiating substrate | |
CN104987079A (en) | Titanium nitride ceramic substrate for LED | |
CN106380208B (en) | High-thermal-conductivity silicon nitride-aluminum nitride complex-phase ceramic substrate for LED and preparation method thereof | |
Shen et al. | Ultrafast fabrication of solid phosphor based white light emitting diodes: From powder synthesis to devices | |
CN106477895A (en) | A kind of sandy kaoline base cordierite glass-ceramic material and its low temperature preparation method | |
CN104987113A (en) | Zirconium silicate whisker modified tabular alumina porous ceramic used in LED lamp heat dissipation, and preparation method thereof | |
CN105110769A (en) | Rare earth-modified flake alumina porous ceramic used for LED lamp heat dissipation, and preparation method thereof | |
CN105000873A (en) | High-rigidity high-power sheet aluminum oxide porous ceramic used for LED lamp heat dissipation and preparation method thereof | |
Kwon et al. | Design of binder-free phosphor paste for warm white LEDs | |
CN104987111A (en) | High-thermal-conductivity tabular alumina porous ceramic for LED lamp heat dissipation, and preparation method thereof | |
CN108070853B (en) | Ceramic slurry, preparation method and composite ceramic heat dissipation substrate | |
Nien et al. | Fabrication and analysis of PiG-based LEDs with WO3-doped TeO2-based glass | |
CN105060864A (en) | Sheet alumina porous ceramic for LED lamp heat dissipation and preparation method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151007 |
|
RJ01 | Rejection of invention patent application after publication |