CN104952981A - Method for preparing silicon quantum dot films through microwave annealing - Google Patents
Method for preparing silicon quantum dot films through microwave annealing Download PDFInfo
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- CN104952981A CN104952981A CN201510394700.8A CN201510394700A CN104952981A CN 104952981 A CN104952981 A CN 104952981A CN 201510394700 A CN201510394700 A CN 201510394700A CN 104952981 A CN104952981 A CN 104952981A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 57
- 239000010703 silicon Substances 0.000 title claims abstract description 57
- 238000000137 annealing Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000002096 quantum dot Substances 0.000 title claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims abstract description 9
- 239000010453 quartz Substances 0.000 claims abstract description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 150000003376 silicon Chemical class 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000012300 argon atmosphere Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 8
- 238000001341 grazing-angle X-ray diffraction Methods 0.000 description 7
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a method for preparing silicon quantum dot films through microwave annealing. Specifically, magnetron-sputtering-deposited silicon-rich silicide films are placed in a microwave annealing furnace for annealing at the lower temperature, and the uniform silicon quantum dot films are prepared. The method is good in controllability, high in repeatability, simple, effective and high in operability due to adoption of reliable magnetron co-sputtering and microwave annealing technologies. According to the main technical scheme, the method comprises steps as follows: firstly, magnetron co-sputtering is performed on Si targets and SiO2 (or Si3N4 or SiC) targets through Ar ions, sputtering power of all the targets is optimized, and silicon-rich silicide films are deposited on monocrystalline silicon and quartz substrates; then silicon quantum dots are formed through annealing treatment at the temperature of 700-900 DEG C in a nitrogen atmosphere or an argon atmosphere by the aid of microwave annealing equipment. Compared with traditional methods for growing silicon quantum dots through tube furnace annealing or rapid photo-thermal annealing, the method has the advantages that the annealing temperature is decreased, the process is simple and the cost is low. The method is applicable to the field of a new generation of high-efficiency solar cells.
Description
Technical field
The invention belongs to efficient solar battery technical field of new generation, particularly a kind of method adopting microwave annealing to prepare silicon quantum dot film.
Background technology
Along with the appearance of the problems such as the day by day exhausted of fossil energy and environmental pollution, solar energy, as a kind of regenerative resource, has become the focus of people's research.And by solar cell, solar energy to be directly converted to electric energy be a kind of very effective approach.For strengthening the competitiveness with conventional energy resource, people wish the novel solar cell researching and developing high efficiency, low cost always.From current photovoltaic market, silica-based solar cell is still in leading position, and this mainly has benefited from the silicon materials rich content needed for it, nontoxic and ripe device preparation technology." first generation ", " second generation " silica-based solar cell development now having realized the marketization is tending towards ripe, but its lower conversion efficiency causes the cost of power production to be still difficult to have the market competitiveness.The solar cell of new generation being target with high efficiency, low cost, long-life and environmental friendliness has become one of focus of current solar cell research.Silicon quantum dot film material, with the physical characteristic of its uniqueness, is expected to become one of core material of efficient solar battery of new generation in future.
Traditional silicon quantum dot film preparation is mainly through magnetron sputtering or chemical vapour deposition (CVD) and in conjunction with tube annealing or the realization of fast-Hankel transform technology.We are through studying for many years, also utilize magnetron sputtering to prepare silicon quantum dot in conjunction with fast-Hankel transform or chemical vapour deposition (CVD) in conjunction with fast-Hankel transform.Applied in 2009 and patent of invention of obtaining the authorization (patent No.: ZL200910094696.8).
In silicon quantum film preparing technology, magnetron sputtering technique has the features such as cost is lower, technical maturity, deposition velocity are fast.But the silicon rich silicide film of magnetron sputtering deposition needs high annealing (>=1100 ° of C) to form silicon quantum dot usually.Because annealing temperature is higher, constrain device technology, be difficult to the low cost requirement reaching solar cell of new generation.
Microwave annealing is as a kind of emerging annealing way, it have heating fast, all even feature such as efficiently, when carrying out microwave annealing to silicon rich silicide, the activity of atomic motion can be improved, promote rearranging of atom, contribute to be separated (the formation silicon quantum dot) of silicon and silicide, reduce growth temperature and the energy consumption of silicon quantum dot.We prepare silicon quantum dot film by the thin microwave annealing of membranes of silicon rich silicide prepared magnetron sputtering deposition.This method avoids long-time high annealing, simple, and cost is low, has enriched the preparation method of silicon quantum dot film material.To further retrieval and the analysis of document, it is not yet seen that two-step method that magnetron sputtering technique and microwave annealing combine prepares the new method of silicon quantum dot.
Summary of the invention
The object of this invention is to provide a kind of method adopting microwave annealing to prepare silicon quantum dot film, the magnetic control co-sputtering technology and emerging microwave annealing technology with maturation process condition combine by the method, realize the preparation of high-quality silicon quantum dot film when reducing annealing temperature.
The present invention is achieved by the following technical solutions.
Microwave annealing prepares a method for silicon quantum dot film, and the method comprises the following steps:
1) select monocrystalline silicon piece and quartz glass plate as substrate, and preliminary treatment before carrying out plated film;
2) using argon gas as sputter gas, adopt the pulse power and radio-frequency power supply respectively to Si target and Si
3n
4(or SiO
2or SiC) target carries out magnetic control co-sputtering, deposition silicon rich silicide and Si plural layers;
3) then carry out microwave annealing process under an argon, namely obtain silicon quantum dot film;
4) XPS analysis silicon quantum dot film composition is adopted;
5) micro-structural and electrical performance testing is carried out.
Further, in described step 1), the thickness of monocrystalline silicon piece substrate is 0.2 ~ 1mm, and quartz plate substrate thickness is 0.5 ~ 1mm.The hydrofluoric acid corrosion that wherein monocrystalline substrate is 5% through concentration successively shows oxide layer 10 ~ 15s, deionized water, acetone, absolute ethyl alcohol and deionized water ultrasonic cleaning 15 ~ 20min; Quartz plate is successively through deionized water, acetone, absolute ethyl alcohol and deionized water ultrasonic cleaning 15 ~ 20min.
Further, described step 2) in, base vacuum 3 × 10
-5~ 1 × 10
-4pa, the flow of argon working gas is 30 ~ 50sccm, and operating pressure is 0.3 ~ 0.5Pa, underlayer temperature 200 ~ 400 ° of C; Meet the pulse power power 80 ~ 120W of Si target, meet Si
3n
4(or SiO
2or SiC) the radio-frequency power supply power 40 ~ 80W of target.
Further, in described step 3), adopt microwave annealing method, heating rate is about 20 ~ 50 ° of C/s, and annealing temperature is 700 ~ 900 ° of C, retention time 2 ~ 6min, then cools with stove.
The present invention with other anneal form silicon quantum dot film method compared with, tool has the following advantages:
The inventive method can accelerate silicon by the effect of microwave and silicide is separated, and reduces the crystallization temperature of silicon quantum dot, improves the crystallization rate of silicon quantum dot.This method, while reducing costs, also obtains a kind of silicon quantum dot preparation method that can be compatible mutually with silicon quantum dot solar cell preparation technology.
Accompanying drawing explanation
Membrane structure schematic diagram (step 2 of corresponding specific embodiment 1 part) before the annealing that Fig. 1 provides for the embodiment of the present invention.
Fig. 2 is microwave device in various embodiments of the present invention and sample modes of emplacement schematic diagram.
Fig. 3 is that the detection GIXRD of silicon quantum dot film corresponding to various embodiments of the present invention schemes.
Embodiment
Use specific embodiment below, and with reference to accompanying drawing, the object, technical solutions and advantages of the present invention are further described.
Embodiment 1
Si/SiO
xthe preparation of multilayer film
Step one, substrate clean: thickness is the quartz plate of 1mm, successively through deionized water, acetone, absolute ethyl alcohol and deionized water ultrasonic cleaning 15min;
Step 2, sputter coating: adopt magnetron co-sputtering to prepare SiO in quartz substrate
x/ Si plural layers.Base vacuum 5 × 10
-5pa, underlayer temperature is 300 DEG C, argon flow amount 40sccm, operating air pressure 0.3Pa, meets the pulse power power 100W of Si target, meets SiO
2the radio-frequency power supply power 40W of target.As shown in Figure 1, the thick SiO of one deck 10nm is grown on the substrate 101
2resilient coating 102, the silicon rich silicon oxide layer 103 that then alternating growth 5nm is thick and 5nm thick silicon layer 104(totally 20 cycles), finally grow the thick SiO of one deck 10nm
2cap (Capping layer) 105;
Microwave annealing crystallization process
Taking-up sample is put into airtight microwave annealing stove and is carried out annealing in process, and as shown in Figure 2, sample is placed on the middle part (microwave field at this place is the most even) of chamber, and sample surface temperature adopts infrared thermometer directly to test; Be evacuated to 10Pa, then pass into nitrogen to one atmospheric pressure, then be evacuated to 10Pa, more logical nitrogen to one atmospheric pressure, so repeatedly after 3 times, then pass into nitrogen and maintain a little less than atmospheric nitrogen environment; Open microwave source, regulating power is to 1200W(average heating rate 25 ° of C/min), be adjusted to after being warming up to 900 DEG C constant temperature mode remain on 900 DEG C at annealing in process 3 minutes, then close microwave source, cool with stove.The GIXRD test result of the silicon quantum dot obtained is as shown in Fig. 3 (a).
Embodiment 2:
Similar to Example 1, its difference is that annealing temperature is 800 ° of C.The GIXRD test result of the silicon quantum dot obtained is as shown in Fig. 3 (b).
Embodiment 3:
Similar to Example 1, its difference is that annealing temperature is 700 ° of C.The GIXRD test result of the silicon quantum dot obtained is as shown in Fig. 3 (c).
Embodiment 4:
Individual layer Silicon-rich SiN
xthe preparation of film
Similar to Example 1, its difference is that the film deposited is that 250 ° of C grow the thick silicon-rich silicon nitride single thin film of 300nm on cleaned silicon substrate; During deposition silicon-rich silicon nitride thin films, meet Si
3n
4the radio-frequency power supply power 50W of target, meets the pulse power power 80W of Si target;
Microwave annealing crystallization process
Similar to Example 1, its difference is that annealing temperature is 900 ° of C.The GIXRD test result of the silicon quantum dot obtained is as shown in Fig. 3 (d).
Embodiment 5:
Similar to Example 4, when its difference is to deposit silicon-rich silicon nitride thin films, the power be connected on silicon target is 100W.The GIXRD test result of the silicon quantum dot obtained is as shown in Fig. 3 (e).
Embodiment 6:
Similar to Example 4, when its difference is to deposit silicon-rich silicon nitride thin films, the power be connected on silicon target is 120W.The GIXRD test result of the silicon quantum dot obtained is as shown in Fig. 3 (f).
Claims (5)
1. microwave annealing prepares a method for silicon quantum dot film, it is characterized in that following process and step:
1) select monocrystalline silicon piece and quartz glass plate as substrate, and preliminary treatment before carrying out plated film;
2) using argon gas as sputter gas, adopt radio-frequency power supply and the pulse power respectively to Si target and SiO
2(or Si
3n
4or SiC) target carries out magnetic control co-sputtering, deposition silicon rich silicide single thin film or plural layers are (as SiO
x/ Si plural layers, wherein x ﹤ 2);
3) then under blanket of nitrogen or argon atmospher, carry out microwave annealing process, namely obtain silicon quantum dot film.
2. a kind of microwave annealing according to claim 1 prepares the method for silicon quantum dot film, it is characterized in that, in described step 1), the thickness of monocrystalline silicon piece substrate is 0.2 ~ 1mm, quartz plate substrate thickness is 0.5 ~ 1mm, wherein monocrystalline substrate is the hydrofluoric acid corrosion surface oxide layer 10 ~ 15s of 5% successively through concentration, deionized water, acetone, absolute ethyl alcohol and deionized water ultrasonic cleaning 15 ~ 20min; Quartz plate is successively through deionized water, acetone, absolute ethyl alcohol and deionized water ultrasonic cleaning 15 ~ 20min.
3. the preparation method of silicon rich silicide single thin film according to claim 1 or plural layers, is characterized in that adopting magnetic control co-sputtering technology.
4. a kind of microwave annealing according to claim 1 prepares the method for silicon quantum dot film, it is characterized in that, described step 2) in, base vacuum 3 × 10
-5~ 8 × 10
-5pa, the flow of argon working gas is 30 ~ 50sccm, and pressure is 0.2 ~ 0.5Pa, underlayer temperature 300 ~ 400 ° of C; Meet the pulse power power 80 ~ 120W of Si target, meet Si
3n
4(or SiO
2or SiC) the radio-frequency power supply power 40 ~ 80W of target.
5. a kind of microwave annealing according to claim 1 prepares the method for silicon quantum dot film; it is characterized in that; in described step 3), adopt microwave annealing method, namely adopt the microwave source of 2.45 ~ 5.8GHz to carry out Fast Heating to sample; heating rate is about 20 ~ 50 ° of C/min; be incubated a period of time after reaching design temperature, then with stove cooling, this is annealed into the lower annealing of inert gas (nitrogen or argon gas) protection; temperature range is at 700 ~ 900 ° of C, annealing time 2 ~ 6min.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105439148A (en) * | 2015-11-18 | 2016-03-30 | 宜昌后皇真空科技有限公司 | Preparation method of silene |
| CN115010136A (en) * | 2022-06-27 | 2022-09-06 | 北京理工大学 | Method for preparing silicon quantum dots by pulse discharge |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101626048A (en) * | 2009-07-08 | 2010-01-13 | 云南师范大学 | Low-temperature growth method of silicon quantum dots for solar battery |
| CN102352487A (en) * | 2011-09-28 | 2012-02-15 | 天津大学 | Preparation method of silicon quantum dot doped nano titanium dioxide film composite material |
| CN103695855A (en) * | 2013-12-17 | 2014-04-02 | 西安文理学院 | Preparation method of silicon quantum dot film having anisotropy |
-
2015
- 2015-07-07 CN CN201510394700.8A patent/CN104952981A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101626048A (en) * | 2009-07-08 | 2010-01-13 | 云南师范大学 | Low-temperature growth method of silicon quantum dots for solar battery |
| CN102352487A (en) * | 2011-09-28 | 2012-02-15 | 天津大学 | Preparation method of silicon quantum dot doped nano titanium dioxide film composite material |
| CN103695855A (en) * | 2013-12-17 | 2014-04-02 | 西安文理学院 | Preparation method of silicon quantum dot film having anisotropy |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105439148A (en) * | 2015-11-18 | 2016-03-30 | 宜昌后皇真空科技有限公司 | Preparation method of silene |
| CN115010136A (en) * | 2022-06-27 | 2022-09-06 | 北京理工大学 | Method for preparing silicon quantum dots by pulse discharge |
| CN115010136B (en) * | 2022-06-27 | 2024-04-05 | 北京理工大学 | Method for preparing silicon quantum dots by pulse discharge |
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