CN104952940A - Very high bandwidth germanium-silicon photoelectric detector - Google Patents
Very high bandwidth germanium-silicon photoelectric detector Download PDFInfo
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- CN104952940A CN104952940A CN201510311785.9A CN201510311785A CN104952940A CN 104952940 A CN104952940 A CN 104952940A CN 201510311785 A CN201510311785 A CN 201510311785A CN 104952940 A CN104952940 A CN 104952940A
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- Prior art keywords
- high bandwidth
- germanium silicon
- wire
- germanium
- silicon photodetector
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims abstract description 40
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 27
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 238000012536 packaging technology Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 238000004891 communication Methods 0.000 abstract description 3
- 230000005693 optoelectronics Effects 0.000 abstract description 3
- 239000000835 fiber Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000013307 optical fiber Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000010561 standard procedure Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
Abstract
The invention relates to a silicon-based integrated optoelectronic device, a very high bandwidth germanium-silicon photoelectric detector, for high-speed high-capacity fiber communication systems. The very high bandwidth germanium-silicon photoelectric detector comprises a plurality of ground electrodes physically separated and a signal electrode; the ground electrodes are connected through one or a plurality of wires; total inductance of the wire or the multiple wires ranges from 50 pH to 900 pH. The wires of certain inductance are introduced to the electrodes of the existing germanium-silicon photoelectric detector by means of wire bonding, and a bandwidth curve of the detector has a certain rise at the high-frequency part. The very high bandwidth germanium-silicon photoelectric detector is achieved without increasing the process complexity or affecting other performance parameters of the detector.
Description
Technical field
The present invention relates to the silica-based integrated opto-electronic device in high-speed high capacity optical fiber telecommunications system, be specifically related to high speed germanium silicon photodetector.
Background technology
Along with the explosive growth of global information data volume, more and more higher requirement is proposed to speed fiber optic communication systems.The application of various advanced modulation form, multidimensional multiplex mode greatly improves transmission rate and the transmission capacity of optical fiber telecommunications system.When optical fiber telecommunications system speed is more and more higher, if continue to use traditional separating component, it is very unpractical that the factor such as power consumption, cost determines this.Therefore, developing integrated opto-electronic device is inexorable trend.In various integrated platform, silicon-based devices with its low cost, small size, with the many advantages such as CMOS technology is compatible, attracted the very big concern from scientific and technological circle and industrial quarters.In recent years, various silica-based active, passive device has had the development of advancing by leaps and bounds.Germanium silicon photodetector, as core devices light signal being converted to the signal of telecommunication, is an important branch of silica-based integrated device.The germanium silicon evanescent wave vertical PIN structural photodetector that is coupled is the predominate architecture realizing at present optical detection in silicon.The contour structures of existing germanium silicon photodetector as shown in Figure 1.
But the bandwidth of operation of current this detector is generally difficult to more than 30GHz, this is mainly limited to the various parasitic parameters of device, as the series resistance of PIN junction and the parasitic capacitance of device.Although reported in electrode fabrication process before, improved the scheme of bandwidth of a device by design on-chip spiral inductor, this design needs extremely complicated electrode design and loaded down with trivial details processing step.
Summary of the invention
Problem to be solved by this invention is to provide a kind of ultra high bandwidth germanium silicon photodetector, is limited to the lower problem of various parasitic parameter bandwidth of operation to overcome existing germanium silicon photodetector.
For solving above technical problem, the present invention proposes a kind of ultra high bandwidth germanium silicon photodetector, comprise several physically separated earth polar and a pickup electrode, connected between described earth polar by one section or a few section lead, the total inductance amount that described a section or a few section lead are formed is 50pH to 900pH.Total physical dimension of one section or a few section lead, such as conductor length, diameter, determine according to the above-mentioned total inductance amount that it is formed.
For not changing existing process conditions, the wire physical dimension specification adopted in the present invention is the requirement meeting Wire Bonding packaging technology.
Preferably, described ground number of poles is two, and described two physically separated earth polars are connected by a wire.
Same preferred, described ground number of poles is two or more, is connected between described plural earth polar by wire.
Described wire can select spun gold, filamentary silver, copper wire etc.Preferably, wire described here is spun gold.
Know-why of the present invention is, on existing germanium silicon photodetector electrode, the spun gold wire of certain length is introduced by Wire Bonding technology, the total inductance value utilizing introducing spun gold wire to be formed offsets device at high frequency treatment charge and discharge process, improves the bandwidth of device.In the present invention, electrode does not have too large difference compared to the electrode shape of existing germanium silicon photodetector, only two earth polars (G) in existing germanium silicon photodetector electrode need be divided into some parts, then welds spun gold wire.
Due to the standard technique that Wire Bonding technology is in integrated device encapsulation process, therefore the present invention does not increase process complexity.In addition, the parameter such as dark current, responsiveness of the present invention on germanium silicon photodetector does not affect.Therefore, our this invention be do not increase process complexity, do not affect other performance parameter of device condition under, achieve a kind of ultra high bandwidth germanium silicon photodetector.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing germanium silicon photodetector.
Fig. 2 is the structural representation of a kind of embodiment of ultra high bandwidth germanium silicon photodetector of the present invention.
Fig. 3 is the structural representation of the another kind of embodiment of ultra high bandwidth germanium silicon photodetector spun gold wire bonds mode of the present invention.
Fig. 4 is the structural representation of the 3rd embodiment of ultra high bandwidth germanium silicon photodetector electrode structure of the present invention and spun gold wire bonds mode.
Fig. 5 is the structural representation of the 4th embodiment of ultra high bandwidth germanium silicon photodetector electrode structure of the present invention and spun gold wire bonds mode.
Fig. 6 is structure germanium silicon photodetector bandwidth of operation experiment test comparing result figure shown in a kind of concrete enforcement structure and existing Fig. 1 Fig. 2 of the present invention Suo Shi.
In Fig. 1 to Fig. 5, numbering is described as follows:
1--earth polar one (G)
2--pickup electrode one (S)
3--earth polar two (G)
4--earth polar three (G)
5--spun gold wire one
6--spun gold wire two
7--spun gold wire three
8--earth polar four (G)
9--earth polar five (G)
10--spun gold wire four
11--spun gold wire five
12--spun gold wire six
Specific implementation method
Be illustrated in figure 2 the structural representation of a kind of embodiment of ultra high bandwidth germanium silicon photodetector of the present invention.Operation principle of the present invention, implementation condition and step is described in detail below in conjunction with related device structures figure.
One section or a few section lead is introduced between some earth polars that the present invention utilizes Wire Bonding technology physically mutually isolated in germanium silicon photodetector electrode, the total inductance value utilizing lead-in conductor to be formed offsets the charge and discharge process of device at high frequency treatment, thus improves bandwidth of a device.
Wire can select spun gold, filamentary silver, copper wire etc., and the requirement meeting Wire Bonding packaging technology can.This embodiment is described further for spun gold.
The electrode of germanium silicon photodetector is generally divided into earth polar (G) and pickup electrode (S) two parts, and earth polar is for loading negative pressure, and pickup electrode is for loading malleation.The electrode structure of existing germanium silicon photodetector is that two earth polars form GSG shape together with a pickup electrode, and two earth polars directly connect, as shown in Figure 1.At this moment the inductance value of electrode can be ignored, and the total resistance of electrode, capacitance characteristic are the principal elements affecting the performances such as bandwidth of a device.
And in the present invention, the earth polar that existing germanium silicon photodetector two connects is divided into three parts, as shown in numbering in Fig. 21,3,4.Then, weld a spun gold wire in the earth polar being numbered 4 with between the earth polar being numbered 3, as numbering in Fig. 25, then weld an other spun gold wire in the earth polar being numbered 3 with between the earth polar being numbered 1, as numbering in Fig. 26, such three part earth polars are just all communicated with.The total length of two spun gold wires can change relative to the position of numbering 4 by regulating numbering 1,3.The welding manner of spun gold wire is also not limited to the form given by Fig. 2, with regard to the structure in Fig. 2, also can the earth polar being numbered 4 be numbered 1, be numbered between the earth polar of 3 and weld spun gold wire respectively, as shown in Figure 3, Fig. 3 and Fig. 2 is equivalent.
In general, in the connection of guarantee earth polar and when not affecting electrode co-planar waveguide basic structure, as long as spun gold wire total length can meet the demands, electrode structure is also not limited to the form in Fig. 2, Fig. 4 and Fig. 5 gives two kinds of possible equivalent structures.As shown in Figure 4, the earth polar that existing germanium silicon photodetector is communicated with can be divided into the two parts directly do not connected, between this two parts earth polar, then weld the spun gold wire of one section of expection length.
As the another kind of equivalent deformation structure that the earth polar shown in Fig. 2, spun gold wire are communicated with, as shown in Figure 5, earth polar is divided into four parts directly do not connected, then between this four part, weld spun gold wire between adjacent two, the inductance value that three sections of spun gold wires of introducing make device total is between 50pH to 900pH.In a word, in the present invention, earth polar can be divided into many parts, and when ensureing that earth polar connected sum guarantee spun gold wire total length can meet expection requirement, spun gold wire bonds also has multiple combination mode.
One shown in Fig. 2 of the present invention specifically implements the silicon photodetector of structure germanium shown in structure and existing Fig. 1 bandwidth of operation experiment test comparing result as shown in Figure 6.In Fig. 6, dotted line is depicted as existing germanium silicon photodetector bandwidth of operation curve, and the three dB bandwidth of visible this detector is less than 20GHz.Solid line is depicted as the bandwidth of operation curve of a kind of concrete structure shown in Fig. 2 of the present invention, and its three dB bandwidth is significantly increased compared to existing germanium silicon photodetector, can reach more than 60GHz.Through detecting, the three dB bandwidth of the germanium silicon photodetector of other equivalent structure above-mentioned also can reach more than 60GHz.
The present invention is based on the standard technique in germanium silicon photodetector packaging technology---Wire Bonding, introduces the spun gold wire of length-specific in the electrodes, utilizes the inductance of spun gold wire itself to achieve ultra high bandwidth germanium silicon photodetector.The present invention is significantly increased compared to existing germanium silicon photodetector bandwidth, and does not increase process complexity, does not also affect other performance parameters.The present invention can be used in long-distance optical fiber communication system or short distance optical interconnection system as individual devices, also can carry out large-scale integrated on sheet based on CMOS technology, significantly reduce costs, size, power consumption.
It should be noted last that, above embodiment is only in order to illustrate technical scheme of the present invention and unrestricted, although with reference to better embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that, can modify to technical scheme of the present invention or equivalent replacement, and not departing from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of right of the present invention.
Claims (5)
1. a ultra high bandwidth germanium silicon photodetector, is characterized in that, comprises several physically separated earth polar and a pickup electrode, is connected between described earth polar by one section or a few section lead, and the total inductance amount that described a section or a few section lead are formed is 50pH to 900pH.
2. ultra high bandwidth germanium silicon photodetector according to claim 1, is characterized in that, the physical dimension specification of described wire is the requirement meeting Wire Bonding packaging technology.
3. ultra high bandwidth germanium silicon photodetector according to claim 2, is characterized in that, described ground number of poles is two, and described two earth polars are connected by a wire.
4. ultra high bandwidth germanium silicon photodetector according to claim 2, is characterized in that, described ground number of poles is two or more, is connected between two between described multiple earth polar by wire.
5. according to the ultra high bandwidth germanium silicon photodetector one of Claims 1-4 Suo Shu, it is characterized in that, described wire is spun gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510311785.9A CN104952940A (en) | 2015-06-09 | 2015-06-09 | Very high bandwidth germanium-silicon photoelectric detector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510311785.9A CN104952940A (en) | 2015-06-09 | 2015-06-09 | Very high bandwidth germanium-silicon photoelectric detector |
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| CN104952940A true CN104952940A (en) | 2015-09-30 |
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| CN201510311785.9A Pending CN104952940A (en) | 2015-06-09 | 2015-06-09 | Very high bandwidth germanium-silicon photoelectric detector |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405911A (en) * | 2015-12-15 | 2016-03-16 | 武汉邮电科学研究院 | On-chip mode converter based silicon-germanium photoelectric detection apparatus |
| CN105810774A (en) * | 2016-03-30 | 2016-07-27 | 华中科技大学 | High-power broadband germanium-silicon photoelectric detector |
Citations (4)
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| US20040081473A1 (en) * | 2002-10-25 | 2004-04-29 | Imran Sherazi | Direct attach optical receiver module and method of testing |
| CN102005497A (en) * | 2009-09-02 | 2011-04-06 | 中国科学院半导体研究所 | Receiving module package method for optical interconnection on chip |
| CN102244002A (en) * | 2011-07-14 | 2011-11-16 | 合肥工业大学 | Preparation method of heterojunction with metal/semiconductor nanometer wire crossing structure |
| CN103985788A (en) * | 2014-05-21 | 2014-08-13 | 中国科学院上海微***与信息技术研究所 | Tensile strained germanium MSM photoelectric detector and manufacturing method thereof |
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2015
- 2015-06-09 CN CN201510311785.9A patent/CN104952940A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040081473A1 (en) * | 2002-10-25 | 2004-04-29 | Imran Sherazi | Direct attach optical receiver module and method of testing |
| CN102005497A (en) * | 2009-09-02 | 2011-04-06 | 中国科学院半导体研究所 | Receiving module package method for optical interconnection on chip |
| CN102244002A (en) * | 2011-07-14 | 2011-11-16 | 合肥工业大学 | Preparation method of heterojunction with metal/semiconductor nanometer wire crossing structure |
| CN103985788A (en) * | 2014-05-21 | 2014-08-13 | 中国科学院上海微***与信息技术研究所 | Tensile strained germanium MSM photoelectric detector and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| ARI NOVACK等: ""Germanium photodetector with 60 GHz bandwidth using inductive gain peaking"", 《OPTICS EXPRESS》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405911A (en) * | 2015-12-15 | 2016-03-16 | 武汉邮电科学研究院 | On-chip mode converter based silicon-germanium photoelectric detection apparatus |
| CN105405911B (en) * | 2015-12-15 | 2017-03-22 | 武汉邮电科学研究院 | On-chip mode converter based silicon-germanium photoelectric detection apparatus |
| CN105810774A (en) * | 2016-03-30 | 2016-07-27 | 华中科技大学 | High-power broadband germanium-silicon photoelectric detector |
| CN105810774B (en) * | 2016-03-30 | 2018-05-22 | 华中科技大学 | A kind of big bandwidth germanium silicon photodetector of high power |
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Application publication date: 20150930 |
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