CN104952893A - 图像传感器 - Google Patents

图像传感器 Download PDF

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CN104952893A
CN104952893A CN201510129359.3A CN201510129359A CN104952893A CN 104952893 A CN104952893 A CN 104952893A CN 201510129359 A CN201510129359 A CN 201510129359A CN 104952893 A CN104952893 A CN 104952893A
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小山威
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Dynafine Semiconductor Co ltd
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Seiko Instruments Inc
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
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    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
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Abstract

本发明提供一种图像传感器，其具有抑制在Si衬底的深处位置产生的载流子的横扩散所引起的对相邻的光电二极管的影响(像素间串扰)的半导体感光元件。利用激光在相邻的光电二极管之间形成改性层，产生复合能级，抑制像素间串扰。

Description

图像传感器
技术领域
本发明涉及具有半导体感光元件的图像传感器。
背景技术
图像传感器一般由具有半导体感光元件的感光部像素阵列构成。在构成感光部像素阵列的各像素的半导体感光元件中广泛使用具有PN结的光电二极管式的光检测器。对各像素的入射光被吸收到半导体衬底内部，所产生的载流子在该光电二极管的耗尽层部重新结合，形成电压或电流来获得半导体感光元件的输出。
根据取得的图像数据的高析像度的要求，像素尺寸逐渐缩小，而得到期望特性变得困难。特别是，由像素间的串扰引起的特性退化变得显著。在某像素的正下方产生的载流子在横方向上扩散，由相邻的像素的耗尽层部收集并重新结合，从而成为多余的信号，由此使得输出信号变得不稳定。在通常的像素中，来自相邻区域的串扰成分被抵消，因而难以引起输出信号的下降，但特别地，在配置于最外侧的像素中，没有来自相邻区域的串扰成分，因而输出信号下降。
作为其改善对策，具有使光检测器的耗尽层深度增大、提高载流子的收集效率的方法。并且，还提出了在耗尽层下构成反射绝缘膜、提高载流子向耗尽层的收集效率、抑制串扰的方法。(例如，参照专利文献1)。
专利文献1：日本特开平5－206495号公报
发明内容
然而，耗尽层深度的增大上存在极限(约1.2μm)，波长长的光(红光～红外光)到达Si衬底深处，无法抑制向相邻像素的横方向扩散所引起的像素间串扰。并且，在耗尽层下形成有反射绝缘膜的像素构造中，无法完全对入射光进行绝缘，由透过光生成的载流子所引起的串扰成为问题。因此，本申请的发明的课题是提供能够抑制串扰的图像传感器。
为了解决上述课题，在本发明中图像传感器构成如下。图像传感器的特征在于，所述图像传感器由半导体感光元件构成，所述半导体感光元件具有：第一导电型半导体衬底、和通过与所述半导体衬底的接合而构成光电二极管的第二导电型半导体区域，多个光电二极管配置成阵列状，在相邻的所述光电二极管之间具有由激光照射产生的改性层，改性层的配置深度根据入射光的波长任意设定。
根据本发明，在半导体衬底的深处位置产生的载流子由改性层捕获，在重新结合后消失，由此能够抑制横方向扩散所引起的感光部像素间的串扰。
附图说明
图1是本发明的半导体感光元件的平面图。
图2是图1所示的半导体感光元件的第1实施例中的A－A线剖视图。
图3是表示Si对于各波长的光的吸收的图。
图4是图1所示的半导体感光元件的第2实施例中的A－A线剖视图。
图5是图1所示的半导体感光元件的第3实施例中的A－A线剖视图。
标号说明
1：半导体感光元件；2：P型半导体衬底；3：N型层区域；4：P型半导体区域；5：N型半导体区域；6：阴极；7：阳极；8：元件分离区域；9：绝缘膜；10：改性层；11：光电二极管；L1：入射光。
具体实施方式
以下，针对多个实施例，使用附图说明用于实施发明的方式。
[实施例1]
图1是本发明的第1实施例的图像传感器的半导体感光元件的平面图，图2是第1实施例的图像传感器的半导体感光元件的剖视图。
半导体感光元件1具有：P型的半导体衬底2、N型层区域3、P型半导体区域4、N型半导体区域5、阴极6、阳极7、元件分离区域8以及绝缘膜9，在本实施例中，半导体感光元件1由二极管构成。
半导体衬底2例如以硅的单晶体为材料形成，在内部规定位置具有改性层10。绝缘膜9例如由氧化硅膜或氮化硅膜形成，作为半导体表面的保护膜发挥作用。N型层区域3通过与半导体衬底2的PN结，形成光电二极管11。在光电二极管11中，通过对阴极6施加偏压，耗尽层在半导体衬底2处扩展，作为用于取入电荷的光感知区域发挥作用。P型半导体区域4形成为包围N型半导体区域3。阴极6和阳极7由金属材料构成，例如通过溅射法等形成为矩形状，分别与N型层区域3、P型半导体区域4电连接。
当光L1入射到半导体感光元件1时，光L1透过绝缘膜9和元件分离区域8，照射光L1的各波长成分依照波长，到达半导体衬底2的内部，产生载流子。载流子扩散，到达PN结的耗尽层区域时，形成电压或电流而获得输出。
照射光L1的Si中的光吸收依据朗伯－比尔定律log10(I1/I0)＝－αL，(I0：入射到介质前的光的强度，I1：在介质中移动时的光的强度，α：吸收系数)，波长长的光到达半导体衬底2的深处。图3是表示对于各波长的光的吸收的图。例如，波长1000nm的红外光在半导体衬底2的深度70μm处大约吸收一半。
在半导体衬底2的深处位置产生的载流子扩散，到达PN结的耗尽层区域，而此时，在本实施例中，为了抑制由于横方向扩散而使载流子到达相邻的光电二极管，在与相邻的光电二极管之间形成通过激光照射产生的改性层10。改性层10以如下方式形成：通过聚光透镜将透过半导体衬底的波长的激光调整成在晶片的内部的规定深度形成聚光点，并利用该激光沿着晶片的表面进行扫描，由此在晶片的内部的一定深度的区域形成捕获载流子的面状的改性层。其配置深度期望比光电二极管11深。
在半导体衬底2的深处位置产生的载流子由最靠近的改性层10捕获，重新结合后消失。改性层的配置深度根据入射光L1的波长任意设定。例如，对于波长1000nm的红外光，参照图3，改性层的深度形成为吸收效率大的10～100μm。
在半导体感光元件呈一维配置的图像传感器中，在相邻的光电二极管之间改性层也可以呈一维配置。在半导体感光元件呈二维配置的图像传感器中，在与相邻的光电二极管之间以包围各光电二极管的方式配置改性层，因而改性层被配置成格子状。这样，能够抑制向相邻像素的横方向扩散所引起的像素间串扰。
[实施例2]
图4是示出本发明的图像传感器的半导体感光元件的第2实施例的剖视图。对与图2对应的部分标以相同标号。与图2所示的第1实施例的不同点是使改性层10在深度方向上形成为多层。为了防止在与入射的不同波长对应的深度产生的载流子的横扩散，使改性层10形成为多层。
[实施例3]
图5是示出本发明的图像传感器的半导体感光元件的第3实施例的剖视图。对与图2对应的部分标以相同标号。与图2所示的第1实施例的不同点是使改性层10在垂直方向上厚。为了防止在与入射的不同波长对应的深度产生的载流子的横扩散，可以通过增大对激光进行聚光的物镜的数值孔径NA，使改性层10变厚。

Claims (6)

1.一种图像传感器，其具有设置在半导体衬底上的多个半导体感光元件，其特征在于，
在所述多个半导体感光元件中相邻的半导体感光元件之间的所述半导体衬底的内部区域，设置有捕获载流子的改性层，设置所述改性层的深度是根据因光的入射而在所述半导体衬底中产生的载流子的深度而设定的。
2.根据权利要求1所述的图像传感器，其特征在于，
所述改性层以如下方式形成：通过聚光透镜将透过所述半导体衬底的波长的激光调整成在所述半导体衬底的内部的规定深度形成聚光点，并利用该激光沿着所述半导体衬底的表面进行扫描，由此在所述半导体衬底的内部的一定深度的区域内，作为捕获载流子的面状的层而形成该改性层。
3.根据权利要求1或2所述的图像传感器，其特征在于，
所述改性层在深度方向上设置有多层。
4.一种图像传感器，其特征在于，所述图像传感器具有：
第1导电型的半导体衬底；
第2导电型的半导体区域，其与所述半导体衬底接合，形成多个光电二极管；以及
改性层，其通过激光照射而设置在相邻的所述光电二极管的区域之间，
所述改性层的深度是根据因光的入射而在所述半导体衬底中产生的载流子的深度而设定的。
5.根据权利要求4所述的图像传感器，其特征在于，
所述改性层在深度方向上形成有多层。
6.根据权利要求4所述的图像传感器，其特征在于，
所述改性层被厚膜化。
CN201510129359.3A 2014-03-25 2015-03-24 图像传感器 Expired - Fee Related CN104952893B (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114242826A (zh) * 2021-12-02 2022-03-25 武汉新芯集成电路制造有限公司 单光子雪崩二极管及其形成方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112236842A (zh) * 2018-06-12 2021-01-15 东京毅力科创株式会社 基板处理方法、改性装置以及基板处理***

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030170928A1 (en) * 2001-05-22 2003-09-11 Takayuki Shimozono Production method for solid imaging device
US20080096304A1 (en) * 2006-01-18 2008-04-24 Hamamatsu Photonics K.K., Photodiode array and method for making thereof
JP2009206173A (ja) * 2008-02-26 2009-09-10 Hamamatsu Photonics Kk 半導体光検出装置
CN102208427A (zh) * 2010-03-31 2011-10-05 索尼公司 固体摄像器件、用于制造固体摄像器件的方法和电子设备
CN103066085A (zh) * 2012-12-17 2013-04-24 上海集成电路研发中心有限公司 像素单元、像素阵列、图像传感器以及电子产品
JP5247483B2 (ja) * 2009-01-16 2013-07-24 浜松ホトニクス株式会社 フォトダイオードアレイ及び放射線検出器
CN103258831A (zh) * 2012-02-21 2013-08-21 索尼公司 固态成像器件及其制造方法以及相机***

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4394904B2 (ja) * 2003-06-23 2010-01-06 浜松ホトニクス株式会社 フォトダイオードアレイの製造方法
US7875918B2 (en) * 2009-04-24 2011-01-25 Omnivision Technologies, Inc. Multilayer image sensor pixel structure for reducing crosstalk

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030170928A1 (en) * 2001-05-22 2003-09-11 Takayuki Shimozono Production method for solid imaging device
CN1465105A (zh) * 2001-05-22 2003-12-31 索尼公司 固体成像器件的制造方法
US20080096304A1 (en) * 2006-01-18 2008-04-24 Hamamatsu Photonics K.K., Photodiode array and method for making thereof
JP2009206173A (ja) * 2008-02-26 2009-09-10 Hamamatsu Photonics Kk 半導体光検出装置
JP5247483B2 (ja) * 2009-01-16 2013-07-24 浜松ホトニクス株式会社 フォトダイオードアレイ及び放射線検出器
CN102208427A (zh) * 2010-03-31 2011-10-05 索尼公司 固体摄像器件、用于制造固体摄像器件的方法和电子设备
CN103258831A (zh) * 2012-02-21 2013-08-21 索尼公司 固态成像器件及其制造方法以及相机***
CN103066085A (zh) * 2012-12-17 2013-04-24 上海集成电路研发中心有限公司 像素单元、像素阵列、图像传感器以及电子产品

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114242826A (zh) * 2021-12-02 2022-03-25 武汉新芯集成电路制造有限公司 单光子雪崩二极管及其形成方法
CN114242826B (zh) * 2021-12-02 2023-12-22 武汉新芯集成电路制造有限公司 单光子雪崩二极管及其形成方法

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US9412780B2 (en) 2016-08-09
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