CN104952862A - Light-emitting structure for providing predetermined whiteness - Google Patents
Light-emitting structure for providing predetermined whiteness Download PDFInfo
- Publication number
- CN104952862A CN104952862A CN201410627921.0A CN201410627921A CN104952862A CN 104952862 A CN104952862 A CN 104952862A CN 201410627921 A CN201410627921 A CN 201410627921A CN 104952862 A CN104952862 A CN 104952862A
- Authority
- CN
- China
- Prior art keywords
- light
- emitting diode
- backlight unit
- diode chip
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 238000004020 luminiscence type Methods 0.000 claims description 31
- 238000010276 construction Methods 0.000 claims description 23
- 238000002791 soaking Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 18
- 238000001228 spectrum Methods 0.000 claims description 10
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 238000007598 dipping method Methods 0.000 claims description 4
- 239000011295 pitch Substances 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 description 18
- 230000000875 corresponding effect Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004061 bleaching Methods 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Landscapes
- Led Device Packages (AREA)
Abstract
A light-emitting structure for providing a predetermined whiteness comprises a substrate and a light-emitting unit. The light-emitting unit comprises a plurality of first and second light-emitting groups arranged on the substrate. Each first light-emitting group comprises a plurality of first light-emitting diode chips with a first preset wavelength. Each second light-emitting group comprises a plurality of second light-emitting diode chips with a second preset wavelength. When the first and second light emitting diode chips are preset to have similar surface areas or the current quantities passing through the first and second light emitting diode chips are preset to be similar, the light emitting structure can provide a preset whiteness value according to different requirements by adjusting the current quantity ratio or the surface area ratio respectively.
Description
Technical field
The present invention relates to a kind of ray structure, particularly relating to a kind of ray structure for promoting the light mixing effect between multiple light-emitting diodes with different wave length chip.
Background technology
Generally speaking, when body surface to the reflectance of all wavelengths in visible spectrum all more than 80% time, can think that the surface of this object is for white, but existing white garments is many through bleaching and fluorescent brightening process, after it can carry out the conversion of more effective light energy to the light source compared with shortwave wavelength, one more in vain and comparatively bright visual effect can be produced, so can provide and can to expect or the light source of adjustable high whiteness is very active demand on market.
Summary of the invention
The embodiment of the present invention provides a kind of ray structure providing a predetermined whiteness, and it comprises: a substrate and a luminescence unit.Described substrate has at least one the first conductive traces in meandering shape and at least one the second conductive traces in meandering shape, wherein multiple first luminous group and multiple second luminous group respectively mutually alternate intervals be arranged on described first conductive traces and the second conductive traces; Wherein, described first luminous group has different wavelength respectively from the second light-emitting diode chip for backlight unit that luminous group comprises; Wherein, when predetermined described first light-emitting diode chip for backlight unit and described second light-emitting diode chip for backlight unit have the close bright dipping gross area, be preferably 1:2 ~ 1:4 by the ratio of the magnitude of current of described first light-emitting diode chip for backlight unit and described second light-emitting diode chip for backlight unit; Wherein, when making a reservation for identical with the magnitude of current of described second light-emitting diode chip for backlight unit by described first light-emitting diode chip for backlight unit, the ratio of the light-emitting area of described first light-emitting diode chip for backlight unit and described second light-emitting diode chip for backlight unit is preferably 0.8:2 ~ 0.8:4.
The embodiment of the present invention also discloses a kind of for providing the ray structure of a predetermined whiteness, and described ray structure comprises: a substrate; And a luminescence unit, described luminescence unit comprises multiple setting the first luminous group on the substrate and multiple setting the second luminous group on the substrate, wherein described in each, the first luminous group comprises one or more the first light-emitting diode chip for backlight unit, and described in each, the second luminous group comprises one or more the second light-emitting diode chip for backlight unit; Wherein, multiple described first chip placement region and multiple described second mutual alternate intervals arrangement in chip placement region, make the mutual alternate intervals arrangement of multiple described first luminous group and multiple described second luminous group; Wherein, the light source that described first light-emitting diode chip for backlight unit produces has one first predetermined wavelength, and the light source that described second light-emitting diode chip for backlight unit produces has one second predetermined wavelength, and described second predetermined wavelength is greater than described first predetermined wavelength; Wherein, the spectrum produced after the white light source that multiple described first luminous group produces and the mutual mixed light of white light source that multiple described second luminous group produces, calculates gained whiteness value and need fall between 1 ~ 2.5; For two kinds of different high and low colour temperatures, its formula calculating CIE whiteness value is respectively:
W=[Y+800 (x0-x)+1700 (y0-y)]/K; And
W＝[Y+810(x0-x)+1700(y0-y)]/K；
Wherein, W is CIE whiteness value, Y is the Y values (Y-tristimulus value) that described luminescence unit records spectrum gained as calculated, (x0, y0) be the special seat scale value of reference light source in cie color coordinate figure, (x, y) records the CIE coordinate values of spectrum gained as calculated for described luminescence unit, and K is constant.
The embodiment of the present invention also discloses that a kind of described ray structure comprises: a substrate for providing the ray structure of a predetermined whiteness, and described substrate has at least one the first conductive traces in meandering shape and at least one the second conductive traces in meandering shape; First light-emitting diode chip for backlight unit of multiple wavelength between 400nm to 420nm, is arranged on the first conductive traces; And multiple wavelength is greater than the second light-emitting diode chip for backlight unit of the first light-emitting diode chip for backlight unit, be arranged on the second conductive traces; Wherein, described first conductive traces and described second conductive traces present mutual alternate intervals spread configuration; Wherein, when predetermined described multiple first light-emitting diode chip for backlight unit and described multiple second light-emitting diode chip for backlight unit have the close bright dipping gross area, the described second light-emitting diode chip for backlight unit magnitude of current is less than by the described first light-emitting diode chip for backlight unit magnitude of current; Wherein, when the predetermined magnitude of current by described first light-emitting diode chip for backlight unit and described second light-emitting diode chip for backlight unit is close, the surface area of described first light-emitting diode chip for backlight unit is less than the surface area of described second light-emitting diode chip for backlight unit.
Beneficial effect of the present invention can be, it is by the design of " multiple first luminous group and multiple second luminous group respectively mutual alternate intervals are arranged on described first conductive traces and the second conductive traces ", to promote its light mixing effect.In addition, also can, respectively by " in advance surface area fraction design configurations " or " adjustment of later stage magnitude of current ratio ", ray structure of the present invention be made can to provide required whiteness according to different demands.
Further understand feature of the present invention and technology contents for enable, refer to following detailed description for the present invention and accompanying drawing, but appended accompanying drawing only provides with reference to and use is described, be not used for the present invention's in addition limitr.
Accompanying drawing explanation
Fig. 1 is the upper schematic diagram that the light-emitting diode chip for backlight unit of ray structure of the present invention adopts the first positive and negative pad layout design.
Fig. 2 is the upper schematic diagram that the light-emitting diode chip for backlight unit of ray structure of the present invention adopts the positive and negative pad layout of the second to design.
Fig. 3 is the upper schematic diagram that the light-emitting diode chip for backlight unit of ray structure of the present invention adopts the third positive and negative pad layout design.
Fig. 4 is the upper schematic diagram that first and second light-emitting diode chip for backlight unit multiple of the present invention presents subcircular layout arrangement.
Fig. 5 is that first and second chip placement circuit of the present invention presents the design of similar vertical and first and second light-emitting diode chip for backlight unit multiple presents the upper schematic diagram of subcircular layout arrangement.
Fig. 6 is that ray structure of the present invention uses air layer as the part side elevational cross-section schematic diagram of thermal resistance structure.
Fig. 7 is that ray structure of the present invention uses high thermal resistance material layer as the part side elevational cross-section schematic diagram of thermal resistance structure.
Fig. 8 to Figure 14 is that ray structure of the present invention is arranged in pairs or groups the side elevational cross-section schematic diagram of different heat dissipation design respectively.
Main element and label:
Substrate 1
First conductive traces 11
First chip placement region 110
First chip placement circuit 1100
Second conductive traces 12
Second chip placement region 120
Second chip placement circuit 1200
First positive electrode weld pad P1
First negative electrode weld pad N1
First Zener diode Z1
Second positive electrode weld pad P2
Second negative electrode weld pad N2
Second Zener diode Z2
Storage tank 13
Light-absorbing coating 14
Air layer 15
High thermal resistance material layer 15 '
Conductive structure unit 1A
First radiator structure 11A
Second radiator structure 12A
Soaking construction unit 1B
Passage of heat 10B
Perforation 100B
Heat Conduction Material 101B
Combined cooling structure layer 1AB
Luminescence unit 2
First luminous group G1
First LED element 21
First light-emitting diode chip for backlight unit 210,210 '
Anode bonding pad 210P
Negative pole weld pad 210N
Second luminous group G2
Second LED element 22
Second light-emitting diode chip for backlight unit 220,220 '
Anode bonding pad 220P
Negative pole weld pad 220N
Arrangement pitches d
Electronic component 3
Positive Circular test T
Heat dissipation region X, Y, Z
Spacing A, B, C
Bulk density D1, D2, D3
Size S1, S2, S3
First predetermined direction W1
Second predetermined direction W2
Embodiment
The execution mode of " for providing the ray structure of a predetermined whiteness " disclosed in the present invention is described by specific instantiation below, and those of ordinary skill in the art can understand other advantages of the present invention and effect easily by content disclosed in the present specification.The present invention also can be implemented by other different specific embodiments or be applied, and the every details in this specification also based on different viewpoints and application, can carry out various modification and change under not departing from spirit of the present invention.Accompanying drawing of the present invention is only simple declaration again, not describes according to actual size, that is unreacted goes out be correlated with the actual size of formation, first give chat bright.Following execution mode further describes correlation technique content of the present invention, but and is not used to limit technology category of the present invention.
Refer to shown in Fig. 1 to Fig. 3, basic structure of the present invention is that multiple first luminous group G1 of luminescence unit 2 (determinand) and multiple second luminous group G2 adopt to be staggered and design, wherein each first luminous group G1 comprises one or more the first light-emitting diode chip for backlight unit 210, each second luminous group G2 comprises one or more the second light-emitting diode chip for backlight unit 220, and the quantity that the quantity that multiple first light-emitting diode chip for backlight unit 210 uses uses with multiple second light-emitting diode chip for backlight unit 220 can be identical or close.
For example, the first light-emitting diode chip for backlight unit 210 can belong to the blue led chips (deep blue LED chip) of short wavelength, and the first pre-standing wave of its light source produced can roughly between 400nm to 420nm; Second light-emitting diode chip for backlight unit 220 can belong to the blue led chips chip (normal blue LED chip) of long wavelength, and the second predetermined wavelength of its light source produced can between 445nm to 465nm; The colour temperature produced after the white light source that multiple first luminous group G1 produces and the mutual mixed light of white light source that multiple second luminous group G2 produces can roughly between 2500K to 4500K.
Further, when default first light-emitting diode chip for backlight unit 210 has identical or close surface area (or bright dipping gross area) with the second light-emitting diode chip for backlight unit 220, obtain required whiteness, then to reach by the electric current (that is " adjustment of later stage magnitude of current ratio ") controlled by the first light-emitting diode chip for backlight unit 210 and the second light-emitting diode chip for backlight unit 220, the ratio of this magnitude of current is generally about 1:2 ~ 1:4, and the magnitude of current ratio of this enforcement aspect is 1:3.It should be noted that, owing to can be adjusted along with different demands from the ratio of the magnitude of current of the second light-emitting diode chip for backlight unit 220 by the first light-emitting diode chip for backlight unit 210, so the whiteness (Whiteness) produced after the mutual mixed light of light source that produces of the light source that produces of multiple first light-emitting diode chip for backlight unit 210 and multiple second light-emitting diode chip for backlight unit 220 can adjust along with different user demands.
Another situation is, when presetting identical or close with the magnitude of current of the second light-emitting diode chip for backlight unit 220 by the first light-emitting diode chip for backlight unit 210, obtain required whiteness, then to control the ratio (that is " in advance surface area fraction design configurations ") of the surface area of the first light-emitting diode chip for backlight unit 210 and the second light-emitting diode chip for backlight unit 220 in advance and reach, the ratio of this surface area is generally about 0.8:2 ~ 0.8:4, and the ratio of the surface area of this enforcement aspect is 0.8:3.
But, about the account form of CIE whiteness value, can according under the condition setting of D65 working flare (Artificial Daylight6500K) and CIE 1,964 10 ° of standard viewing angle, the high and low colour temperature that 4000K and 3000K two kinds produced for determinand is different, to define the formula calculating CIE whiteness value is respectively:
(1) W=[Y+800 (x0-x)+1700 (y0-y)]/K for 4000K; And
(2)W＝[Y+810(x0-x)+1700(y0-y)]/K for 3000K；
Wherein, W is CIE whiteness value, Y is the Y values (Y-tristimulus value) that a luminescence unit records spectrum gained as calculated, (x0, y0) for the special seat scale value of reference light source in cie color coordinate figure (such as, when colour temperature 4000K, the special seat scale value of one reference light source is (0.3138, 0.3310), when colour temperature 3000K, the special seat scale value of one reference light source when colour temperature 3000K is (0.437, 0.4041)), (x, y) the CIE coordinate values measured by a luminescence unit (such as, when colour temperature 4000K, one of the present invention luminescence unit in the coordinate values recording spectrum conversion gained of 380nm ~ 780nm be (0.2981, 0.3253), when colour temperature 3000K, another luminescence unit of the present invention is (0.4348 in the coordinate values recording spectrum conversion gained of 380nm ~ 780nm, 0.4081)), and K is constant (such as K can be the arbitrary constant between 40-60).If for K for 50, the above-mentioned magnitude of current ratio of this enforcement aspect of arranging in pairs or groups or surface area fraction then can obtain the luminescence unit of expection whiteness (W) value between 1 ~ 2.5.
About fluorescent material used in the present invention, it can be identical fluorescent material formula.For example, can be that yellowish green fluorescent powder mixes red fluorescence powder, yellowish green fluorescent powder can be AB3O12 as Y3Al5O12:Ce, Y3 (Al, Ga) 5O12:Ce or Eu composes the wherein a kind of fluorophor among live alkaline earth silicate, halogen-phosphate, β-SiAlON, and red fluorescence powder preferably can mix Eu compose live among oxide, nitride, oxynitride or (Sr, Ca) AlSiN3:Eu any two there is the fluorophor of different wave length distribution.For avoiding promoting whiteness, should select the fluorescent material of the influence of light do not sent by the first light-emitting diode chip for backlight unit 210, the light that the first light-emitting diode chip for backlight unit 210 sends does not fall into it and excites frequency spectrum category, non-between 400nm to 420nm.If but first and second light-emitting diode (210,220) is independent monomer, then the fluorescent material of the second light-emitting diode chip for backlight unit 220 collocation can limit without this.Certainly, the present invention, in the application of different aspect, also can use different fluorescent material formulas.
Below refer to shown in Fig. 1 to Fig. 3, the invention provides a kind of for providing the ray structure of a predetermined whiteness, it comprises: substrate 1 and a luminescence unit 2.
First, the upper surface of substrate 1 has at least one the first conductive traces 11 in meandering shape and at least one the second conductive traces 12 in meandering shape.Wherein, at least one first conductive traces 11 has multiple first chip placement region 110, at least one second conductive traces 12 has multiple second chip placement region 120, and multiple first chip placement region 110 and multiple second chip placement region 120 are spaced in the mode mutually replaced, so the first conductive traces 11 and the second conductive traces 12 can present the configuration design of mutual alternate intervals spread configuration.In addition, each first chip placement region 110 have at least two located adjacent one another and series connection the first chip placement circuit 1100, and each second chip placement region 120 have at least two located adjacent one another and series connection the second chip placement circuit 1200.For example, the serpentine shape of the first conductive traces 11 and the second conductive traces 12 similarly can be connected by multiple S shape and formed.The first conductive traces 11 in meandering shape and the second conductive traces 12 in meandering shape can with the picture finger interfix of two hands but discontiguous mode mutually near, make the first conductive traces 11 and the second conductive traces 12 can present mutually staggered line design.In addition, multiple first chip placement circuit 1100 and multiple second chip placement circuit 1200 can adopt mode parallel to each other to carry out layout, but the present invention is not as limit.
Wherein, two opposite ends of the first conductive traces 11 can be connected to the first positive electrode weld pad P1 and the first negative electrode weld pad N1 respectively, and two opposite ends of the second conductive traces 12 can be connected to the second positive electrode weld pad P2 and the second negative electrode weld pad N2 respectively.For example, first positive electrode weld pad P1 and the second positive electrode weld pad P2 can be adjacent one another are and near the wherein pair of horns place of substrate 1 on same diagonal, and the first negative electrode weld pad N1 and the second negative electrode weld pad N2 can be adjacent one another are and near the other pair of horns place of substrate 1 on same diagonal.In addition, " the first conductive traces 11 extends to the transverse width of the sinuous track of the first negative electrode weld pad N1 from the first positive electrode weld pad P1 " and " the second conductive traces 12 extends to the transverse width of the sinuous track of the second negative electrode weld pad N2 from the second positive electrode weld pad P2 " of the present embodiment all can form the change of " gradually broadening from narrow; leniently gradually narrow again " along the same diagonal of substrate 1, whereby to promote the wiring area of the first conductive traces 11 and the second conductive traces 12.
Moreover, luminescence unit 2 comprises multiple first luminous group G1 and multiple second luminous group G2, wherein each first luminous group G1 comprises one or more the first light-emitting diode chip for backlight unit 210, each second luminous group G2 comprises one or more the second light-emitting diode chip for backlight unit 220, and the quantity that the quantity that uses of multiple first light-emitting diode chip for backlight unit 210 and multiple second light-emitting diode chip for backlight unit 220 use can be identical or close.In addition, the light source that the first light-emitting diode chip for backlight unit 210 produces has one first predetermined wavelength, and the light source that the second light-emitting diode chip for backlight unit 220 produces has one second predetermined wavelength, and the second predetermined wavelength can be greater than the first predetermined wavelength.
Further, as shown in Figure 1, the anode bonding pad 210P of each the first light-emitting diode chip for backlight unit 210 and anode bonding pad 220P of each the second light-emitting diode chip for backlight unit 220 can relative to substrate 1 to arrange towards the mode of same first predetermined direction W1, the negative pole weld pad 210N of each the first light-emitting diode chip for backlight unit 210 and negative pole weld pad 220N of each the second light-emitting diode chip for backlight unit 220 can relative to substrate 1 to arrange towards the mode of same second predetermined direction W2, and the first predetermined direction W1 and the second predetermined direction W2 can be two rightabouts.Whereby, with single chips, the positive and negative electrode weld pad (210P, 210N) of each the first light-emitting diode chip for backlight unit 210 can be identical relative to the orientation that arranges of substrate 1 with the positive and negative electrode weld pad (220P, 220N) of each the second light-emitting diode chip for backlight unit 220 relative to the orientation (aspect) that arranges of substrate 1, so the first light-emitting diode chip for backlight unit 210 and the second light-emitting diode chip for backlight unit 220 do not need to carry out the turning to, with improving production efficiency of positive pole (+) and negative pole (-) putting in brilliant process.
Further, in order to reach above-mentioned " each first light-emitting diode chip for backlight unit 210 just, negative pole weld pad (210P, 210N) relative to substrate 1, orientation and each the second light-emitting diode chip for backlight unit 220 are being set just, negative pole weld pad (220P, 220N) can be identical relative to the orientation that arranges of substrate 1 " design, one or more first light-emitting diode chip for backlight unit 210 of each the first luminous group G1 can only be placed on one of them first chip placement circuit 1100 in the first corresponding chip placement region 110, and one or more second light-emitting diode chip for backlight unit 220 of each the second luminous group G2 is merely able to be placed on one of them second chip placement circuit 1200 in the second corresponding chip placement region 120.For example, as shown in Figure 1, in order to the anode bonding pad 210P of each the first light-emitting diode chip for backlight unit 210 can be arranged towards the mode of the first predetermined direction W1, one or more first light-emitting diode chip for backlight unit 210 of each the first luminous group G1 can only be placed on that row of " near the first positive electrode weld pad P1 " among two adjacent the first chip placement circuits 1100.Same design principle, in order to the anode bonding pad 220P of each the second light-emitting diode chip for backlight unit 220 can be arranged towards the mode of the first predetermined direction W1, one or more second light-emitting diode chip for backlight unit 220 of each the second luminous group G2 can only be placed on that row of " farthest away from the second positive electrode weld pad P2 " among two adjacent the second chip placement circuits 1200.
Whereby, in order to reach the design of above-mentioned " the first light-emitting diode chip for backlight unit 210 and the second light-emitting diode chip for backlight unit 220 put in brilliant process do not need to carry out positive pole and negative pole turns to ", one or more first light-emitting diode chip for backlight unit 210 of each the first luminous group G1 can be arranged on the same first chip placement circuit 1100 in the first corresponding chip placement region 110, samely multiple first light-emitting diode chip for backlight unit 210 put in brilliant process and do not need to carry out both positive and negative polarity and turn to are come to be formed, and one or more second light-emitting diode chip for backlight unit 220 of each the second luminous group G2 can be arranged on the same second chip placement circuit 1200 in the second corresponding chip placement region 120, samely multiple second light-emitting diode chip for backlight unit 220 put in brilliant process and do not need to carry out both positive and negative polarity and turn to are come to be formed.In addition, because multiple first chip placement region 110 and multiple second chip placement region 120 present the arrangement of mutual alternate intervals, so make multiple first luminous group G1 and multiple second luminous group G2 can be spaced in the mode mutually replaced, whereby to promote the light mixing effect with the luminous group of different wave length chip.
For example, multiple first light-emitting diode chip for backlight unit 210 and multiple second light-emitting diode chip for backlight unit 220 can alternate intervals be arranged in one rectangular, so no matter be along horizontal or longitudinal, multiple first light-emitting diode chip for backlight unit 210 and multiple second light-emitting diode chip for backlight unit 220 are all present alternate intervals arrangement.In addition, it is put and has multiple first chip placement circuits 1100 of the first light-emitting diode chip for backlight unit 210 and upper storing thereof to have multiple second chip placement circuits 1200 of the second light-emitting diode chip for backlight unit 220 can be parallel to each other and have identical arrangement pitches d, so make every two adjacent the first luminous group G1 and the second luminous group G2 can be parallel to each other and have identical arrangement pitches d, the light source that therefore multiple first luminous group G1 of luminescence unit 2 and multiple second luminous group G2 produces can obtain preferably light mixing effect.
Further, all carry out extending along the diagonal of substrate 1 due to the first conductive traces 11 and the second conductive traces 12 and make the transverse width of sinuous track present the change of " gradually broadening from narrow; leniently gradually narrow again ", so the quantity of the quantity of multiple first light-emitting diode chip for backlight unit 210 of each the first luminous group G1 and multiple second light-emitting diode chip for backlight unit 220 of each the second luminous group G2 can sequentially be successively decreased from the centre of luminescence unit 2 toward two opposition sides or sequentially increase progressively toward centre from two opposition sides of luminescence unit 2.
For example, the quantity of multiple first light-emitting diode chip for backlight unit 210 and multiple second light-emitting diode chip for backlight unit 220 is respectively 2n-1 and 2n from two opposite diagonal of luminescence unit 2 toward the middle formula sequentially increased progressively, and wherein n is the sequence number of the first luminous group G1 and the second luminous group G2 sequential from 1.Therefore, multiple first light-emitting diode chip for backlight unit 210 can present (2 × 1-1=1 from two opposite diagonal of luminescence unit 2 toward the middle quantity sequentially increased progressively, 2 × 2-1=3,2 × 3-1=5) change, and multiple second light-emitting diode chip for backlight unit 220 can present the change of (2 × 1=2,2 × 2=4) from the past middle quantity sequentially increased progressively of two opposite diagonal of luminescence unit 2.Whereby, the quantity of multiple first light-emitting diode chip for backlight unit 210 of two adjacent the first luminous group G1 can differ 2, the quantity of multiple second light-emitting diode chip for backlight unit 220 of two adjacent the second luminous group G2 can differ 2, and the quantity of the light-emitting diode chip for backlight unit (210,220) of two adjacent the first luminous group G1 and the second luminous group G2 can differ 1.But the present invention is not limited with above-mentioned lifted example.
It is worth mentioning that, as shown in Figure 2, the anode bonding pad 210P of each the first light-emitting diode chip for backlight unit 210 and anode bonding pad 220P of each the second light-emitting diode chip for backlight unit 220 can relative to substrate 1 to arrange towards the mode of the first predetermined direction W1 and the second predetermined direction W2 respectively, the negative pole weld pad 210N of each the first light-emitting diode chip for backlight unit 210 and negative pole weld pad 220N of each the second light-emitting diode chip for backlight unit 220 can relative to substrate 1 to arrange towards the mode of the first predetermined direction W1 and the second predetermined direction W2 respectively, just make each first light-emitting diode chip for backlight unit 210, negative pole weld pad (210P, 210N) relative to substrate 1, orientation and each the second light-emitting diode chip for backlight unit 220 are being set just, negative pole weld pad (220P, 220N) relative to substrate 1 to arrange orientation different.In other words, coordinate shown in Fig. 1 and Fig. 2, with single chips, according to different design requirements, the positive and negative electrode weld pad (210P, 210N) of each the first light-emitting diode chip for backlight unit 210 can be " identical positive and negative pad layout design (as shown in Figure 1) " relative to the positive and negative electrode weld pad (220P, 220N) arranging orientation (aspect) and each the second light-emitting diode chip for backlight unit 220 of substrate 1 relative to the orientation that arranges of substrate 1, or " completely different positive and negative pad layout designs (as shown in Figure 2) ".
In addition, as shown in Figure 3, the anode bonding pad 210P of one or more first light-emitting diode chip for backlight unit 210 of any one the first luminous group G1 and negative pole weld pad 210N respectively can to carry out layout setting towards the mode of same first predetermined direction W1 and same second predetermined direction W2, but the anode bonding pad 210P of one or more first light-emitting diode chip for backlight unit 210 of the luminous group G1 of another one first of adjacent any one the first luminous group G1 above-mentioned and the layout setting of negative pole weld pad 210N will just conversely, and make the anode bonding pad 210P of one or more the first light-emitting diode chip for backlight unit 210 and negative pole weld pad 210N respectively can to carry out layout setting towards the mode of same second predetermined direction W2 and same first predetermined direction W1.Moreover the another one second luminous group G2 of any one second luminous group G2 and adjacent any one the second luminous group G2 above-mentioned also can present as above-mentioned " the positive and negative pad layout of alternative expression arranges (as shown in Figure 3) ".In other words, the present invention can according to different demands, and selectivity adopts " identical positive and negative pad layout design (as shown in Figure 1) ", " completely different positive and negative pad layout design (as shown in Figure 2) " or " the positive and negative pad layout of alternative expression arranges (as shown in Figure 3) ", but the present invention is not as limit.
Refer to shown in Fig. 4, the matrix being arranged in 6 × 6 with light-emitting diode chip for backlight unit (210,220) is used as example, and wherein the total quantity of multiple first light-emitting diode chip for backlight unit 210 can be equal to the total quantity of multiple second light-emitting diode chip for backlight unit 220.When near substrate 1 four corners multiple light-emitting diode chip for backlight unit (as Fig. 4 with imaginary line indicate 210,220) be removed after, multiple first light-emitting diode chip for backlight unit 210 and multiple second light-emitting diode chip for backlight unit 220 just can present the layout arrangement of " subcircular (or similar round) ".Further, 4 are had to be positioned at outmost turns (indicating especially with label 210 ') in multiple first light-emitting diode chip for backlight unit 210, also 4 are had to be positioned at outmost turns (indicating especially with label 220 ') in multiple second light-emitting diode chip for backlight unit 220, no matter that employing 4 is positioned at the first light-emitting diode chip for backlight unit 210 ' of outmost turns or 4 the second light-emitting diode chip for backlight unit 220 ' being positioned at outmost turns are used as basic point (stain as shown in Figure 4), can draw one as Fig. 4 with imaginary line the positive Circular test T that presents.Best design point is, the first light-emitting diode chip for backlight unit 210 ' adopting 4 to be positioned at outmost turns is used as positive Circular test T that basic point draws and the second light-emitting diode chip for backlight unit 220 ' adopting 4 to be positioned at outmost turns and is used as the positive Circular test T that basic point draws and roughly can overlaps or overlap to form single just Circular test T completely.
In addition, no matter the first chip placement circuit 1100 and the second chip placement circuit 1200 are " skewed design " or " vertical design ", multiple first chip placement circuit 1100 and multiple second chip placement circuit 1200 are preferably mode parallel to each other and carry out layout.And multiple first light-emitting diode chip for backlight unit 210 and multiple second light-emitting diode chip for backlight unit 220 formed same come to put in brilliant process do not need to carry out both positive and negative polarity and turn to, that is, the anode bonding pad 210P of each the first light-emitting diode chip for backlight unit 210 and anode bonding pad 220P of each the second light-emitting diode chip for backlight unit 220 can relative to substrate 1 to arrange towards the mode of same first predetermined direction W1 ', and the negative pole weld pad 220N of the negative pole weld pad 210N of each the first light-emitting diode chip for backlight unit 210 and each the second light-emitting diode chip for backlight unit 220 can relative to substrate 1 to arrange towards the mode of same second predetermined direction W2 '.
Moreover, refer to shown in Fig. 5, first chip placement circuit 1100 and the second chip placement circuit 1200 also can be replaced by " similar vertical design " from " the skewed design " of Fig. 4, and the design of this kind of similar vertical also can make multiple first light-emitting diode chip for backlight unit 210 and multiple second light-emitting diode chip for backlight unit 220 can present the layout arrangement of " subcircular (or similar round) ".That is, when being designed to the layout arrangement presenting " just circular ", the total quantity of multiple first light-emitting diode chip for backlight unit 210 and multiple second light-emitting diode chip for backlight unit 220 is identical, the quantity of the light-emitting diode chip for backlight unit (210,220) of two adjacent the first luminous group G1 and the second luminous group G2 can differ 1.Therefore, when the quantity of multiple first light-emitting diode chip for backlight unit 210 of the first luminous group G1 is N, then the quantity of multiple second light-emitting diode chip for backlight unit 220 of the second luminous group G2 is N+1; When the quantity of the first luminous group G1 is N+1, then the quantity of the second luminous group G2 is N, so the total quantity of the light-emitting diode chip for backlight unit (210,220) of the first luminous group G1 and the second luminous group G2 is all N (N+1).
It should be noted that; also layout one circuit between the first positive electrode weld pad P1 and the first negative electrode weld pad N1 can be connected between first positive electrode weld pad P1 and the first negative electrode weld pad N1; to use as circuitous wander (the by pass) of shunt; this along separate routes circuitous circuit of wandering can arrange the protective circuit that prevents electrostatic breakdown (static breakdown), such as one first Zener diode Z1 (zener diode).Design in like manner; also layout one circuit between the second positive electrode weld pad P2 and the second negative electrode weld pad N2 can be connected between second positive electrode weld pad P2 and the second negative electrode weld pad N2; to use as circuitous wander (the by pass) of shunt; this along separate routes circuitous circuit of wandering can arrange the protective circuit that another prevents electrostatic breakdown (static breakdown), such as one second Zener diode Z2.
In addition, coordinate shown in Fig. 1, Fig. 6 and Fig. 7, substrate 1 upper surface has one for the storage tank 13 of an accommodating electronic component 3, and the inner surface of storage tank 13 has a light-absorbing coating 14, and the inside of substrate 1 has one is arranged on thermal resistance structure between electronic component 3 and luminescence unit 2.For example, substrate 1 can be the ceramic substrate that has high reflectance, for wavelength to be first light-emitting diode chip for backlight unit 210 of 410nm and wavelength be second light-emitting diode chip for backlight unit 220 of 450nm, the ceramic substrate with high reflectance can be supplied to the high reflectance that the first light-emitting diode chip for backlight unit 210 and the second light-emitting diode chip for backlight unit 220 are approximately 102% and 100.9% respectively, whereby to promote luminous efficacy of the present invention and whiteness.Moreover electronic component 3 can be optical sensor, and light-absorbing coating 14 can be for reducing reflective black coating, can the photosensitive effect of improving optical sensor.In addition, thermal resistance structure can be air layer 15 (as shown in Figure 6) or the high thermal resistance material layer 15 ' (as shown in Figure 7) also higher than the thermal resistance of substrate 1, and the heat that minimizing luminescence unit 2 produces can conduct to electronic component 31.In addition, about the storing position of electronic component 3 and thermal resistance structure, for example, as shown in Figure 1, when electronic component 3 is arranged at a wherein corner of adjacent substrates 1, thermal resistance structure (15,15 ') can be inclined between luminescence unit 2 and electronic component 3.Another possibility putting position is set to, and when electronic component 3 is arranged at wherein one longitudinally (or laterally) side of adjacent substrates 1, thermal resistance structure can the mode of vertically (or level) be arranged between luminescence unit 2 and electronic component 3.Further, thermal resistance structure on substrate 1 and follow-up conductive structure unit can generate simultaneously, that is, multiple precalculated positions groove or through hole is formed in substrate 1 back side, those positions are namely relative to the position of thermal resistance structure and conductive structure unit, its depth of penetration is predefined for identical, then, the groove of thermal resistance structure or through hole can be selected do not fill out (and air) or insert high thermal resistance material, and the groove of conductive structure unit or through hole alternative insert identical or different highly heat-conductive material.That is, substrate, thermal resistance structure and the thermal conductivity k1 of conductive structure unit three, the relation of k2 and k3 can be k3>k1>k2.This enforcement aspect considers based on board structure intensity, adopts groove design.
Further, as shown in Fig. 6 to Figure 14, substrate 1 also can be arranged in pairs or groups various different heat dissipation design further, as conductive structure unit 1A, soaking construction unit 1B etc.
Coordinate shown in Fig. 6 and Fig. 7, substrate 1 also comprises one further and is embedded in conductive structure unit 1A in substrate 1, and conductive structure unit 1A comprises and is multiplely separately positioned on the first radiator structure 11A of the below of multiple first light-emitting diode chip for backlight unit 210 and multiple the second radiator structure 12A being separately positioned on the below of multiple second light-emitting diode chip for backlight unit 220.For example, the first light-emitting diode chip for backlight unit 210 and the second light-emitting diode chip for backlight unit 220 form one first LED element 21 and one second LED element 22 respectively after encapsulation (such as using identical or different fluorescent glue to encapsulate).When the wavelength that the wavelength that the first light-emitting diode chip for backlight unit 210 that the first LED element 21 comprises provides provides lower than the second light-emitting diode chip for backlight unit 220 that the second LED element 22 comprises, first radiator structure 11A and the second radiator structure 12A can adopt following two kinds of designs, to balance the heat dissipation of the first LED element 21 and the second LED element 22.First, the first is, when the first radiator structure 11A and the second radiator structure 12A uses the material with identical heat-sinking capability, the overall dimensions (or volume) of the first radiator structure 11A is greater than the overall dimensions (or volume) of the second radiator structure 12A.In addition, the second is, when the size out of the ordinary of the first radiator structure 11A and the second radiator structure 12A is all identical, the heat-sinking capability of the material that the first radiator structure 11A uses is greater than the heat-sinking capability of the material that the second radiator structure 12A uses.But the present invention is not as limit.In addition, because first LED element 21 with different wave length chip can cause different junction temperature from the second LED element 22, so the ratio of the unit heat flux Q2 of the unit heat flux Q1 of the first radiator structure 11A and the second radiator structure 12A can be designed as about Q1:Q2=1:0.86 ~ 0.95.
Refer to shown in Fig. 8, it all gradually can be reduced from the center of substrate 1 toward the direction of circumference the size of multiple first radiator structure 11A and multiple second radiator structure 12A, " first and second LED element multiple (21,22) above the zone line being positioned at substrate 1 " and " the junction temperature difference between first and second LED element multiple (21,22) being positioned at the encircled area circle zone of zone line (that is the around) top of substrate 1 whereby reducing.Further, from the center of substrate 1 toward the direction of circumference, the size of multiple first radiator structure 11A sequentially can be successively decreased from the center of described substrate toward the direction of circumference 10% (that is the size of adjacent two the first radiator structure 11A can differ 10%), 10% (that is the size of adjacent two the second radiator structure 12A can differ 10%) and the size of multiple second radiator structure 12A also sequentially can be successively decreased from the center of described substrate toward the direction of circumference.In addition, the heat-sinking capability of the second radiator structure 12A can be approximately the 0.86-0.95 of adjacent first radiator structure 11A doubly.
Refer to shown in Fig. 9 to Figure 11, the bottom of its substrate 1 further comprises the soaking construction unit 1B that is close to conductive structure unit 1A, wherein the inside of soaking construction unit 1B comprises multiple passage of heat 10B separated from one another, by adjustment passage of heat 10B shape and distribution, " first and second LED element multiple (21,22) above the zone line being positioned at soaking construction unit 1B " and " temperature difference between first and second LED element multiple (21,22) above the encircled area being positioned at soaking construction unit 1B reducing.
When passage of heat 10B is measure-alike, the direction from the center of soaking construction unit 1B toward circumference can increase or the bulk density (D1, D2, D3) of soaking construction unit 1B occupied by passage of heat 10B gradually can be reduced toward the direction of circumference from the center of soaking construction unit 1B by spacing (A, B, C) between every two adjacent passage of heat 10B gradually.Whereby, multiple passage of heat 10B can from the direction of " center of soaking construction unit 1B is toward circumference " or from " circumference of soaking construction unit 1B toward the direction sequential of " center ", to form a gradual conductive structure.Generally speaking, higher the closer to centralised temperature, if with the temperature difference five degree for boundary, the side elevational cross-section presented from the ray structure of Fig. 9 and Figure 10 defines three heat dissipation region (X, Y, Z), the lateral separation that these three heat dissipation region (X, Y, Z) are contained reduces gradually from heat dissipation region X toward the direction of heat dissipation region Z respectively, and such as the distance proportion of three heat dissipation region (X, Y, Z) can be X:Y:Z=5:4:3.When the size of multiple passage of heat 10B is all identical, the spacing (A, B, C) between every two adjacent passage of heat 10B can gradually increase (such as A:B:C=3:4:5) from the center of soaking construction unit 1B toward the direction of circumference or the bulk density (D1, D2, D3) of soaking construction unit 1B occupied by passage of heat 10B can reduce (such as D1:D2:D3=6.5:2:1 (individual)) in the direction from heat dissipation region X toward heat dissipation region Z gradually.
In addition, each passage of heat 10B can be the solid heat conduction cylinder that a Heat Conduction Material 101B (such as having the metal material of the high capacity of heat transmission) filling up the 100B that bores a hole completely by perforation 100B and is formed, and multiple passage of heat 10B can run through soaking construction unit 1B completely, but the present invention is not as limit.Such as, Heat Conduction Material 101B also can not need to fill up corresponding perforation 100B completely, and multiple passage of heat 10B also can not need to run through soaking construction unit 1B completely.
Refer to shown in Figure 11, the inside of its soaking construction unit 1B comprises multiple passage of heat 10B separated from one another, and the size (S1, S2, S3) of multiple passage of heat 10B can reduce from the center of soaking construction unit 1B gradually toward the direction of circumference.
For example, suppose with the temperature difference five degree for boundary, the side elevational cross-section presented from the ray structure of Figure 11 defines three heat dissipation region (X, Y, Z), the lateral separation that these three heat dissipation region (X, Y, Z) are contained reduces gradually from heat dissipation region X toward the direction of heat dissipation region Z respectively, and such as the distance proportion of three heat dissipation region (X, Y, Z) can be X:Y:Z=5:4:3.Use the passage of heat 10B of multiple different size, and the size (S1, S2, S3) of multiple passage of heat 10B can direction from heat dissipation region X toward heat dissipation region Z reduce (such as S1:S2:S3=5:4:3) gradually, so " radiating effect of first and second LED element multiple (21,22) above the zone line being positioned at soaking construction unit 1B certainly can than " it is good that loose (21, the 22) thermal effects of first and second LED element multiple above the encircled area being positioned at soaking construction unit 1B comes.
Refer to shown in Figure 12 to Figure 14, conductive structure unit 1A and soaking construction unit 1B is combined into a combined cooling structure layer 1AB by it.Further, the circumference side being positioned at each first radiator structure 11A of combined cooling structure layer 1AB is provided with multiple passage of heat 10B separated from one another.Wherein when those passages of heat 10B measure-alike, and the spacing (A, B, C) between every two adjacent passage of heat 10B can increase gradually from the center of the first corresponding radiator structure 11A toward the direction of circumference or bulk density (D1, D2, D3) occupied by multiple passage of heat 10B can reduce from the center of the first corresponding radiator structure 11A gradually toward the direction of circumference.Identical principle, be positioned at that the circumference of each second radiator structure 12A of combined cooling structure layer 1AB is other is provided with multiple passage of heat 10B measure-alike and separated from one another, and the spacing (A, B, C) between every two adjacent passage of heat 10B can increase gradually from the center of the second corresponding radiator structure 12A toward the direction of circumference or bulk density (D1, D2, D3) occupied by multiple passage of heat 10B can reduce from the center of the second corresponding radiator structure 12A gradually toward the direction of circumference.Wherein when those passages of heat 10B size is different, the size (S1, S2, S3) of multiple passage of heat 10B can reduce from the center of the first corresponding radiator structure 11A gradually toward the direction of circumference.Identical principle, the circumference side being positioned at each second radiator structure 12A of combined cooling structure layer 1AB is provided with multiple passage of heat 10B separated from one another, and the size (S1, S2, S3) of multiple passage of heat 10B can reduce from the center of the second corresponding radiator structure 12A gradually toward the direction of circumference.By means of aforesaid way, can reduce there is different wave length chip first and second LED element (21,22) between the temperature difference.
(possible effect of embodiment)
In sum, beneficial effect of the present invention can be, the ray structure that the embodiment of the present invention provides, it is by the design of " multiple first chip placement region 110 and multiple second chip placement region 120 alternate intervals arrangement mutually; make multiple first luminous group G1 and the mutual alternate intervals arrangement of multiple second luminous group G2 ", to promote the light mixing effect between multiple first luminous group G1 and multiple second luminous group G2 with different wave length chip.In addition, also respectively by " in advance surface area fraction design configurations " or " adjustment of later stage magnitude of current ratio ", ray structure of the present invention can provide required whiteness (Whiteness) according to different demands can be made.
The foregoing is only better possible embodiments of the present invention, non-ly therefore limit to right of the present invention, therefore the equivalence techniques change of such as using specification of the present invention and accompanying drawing content to do, be all contained in protection scope of the present invention.
Claims (15)
1. for providing a ray structure for a predetermined whiteness, it is characterized in that, described ray structure comprises:
One substrate, described substrate has at least one the first conductive traces in meandering shape and at least one the second conductive traces in meandering shape, wherein at least one described first conductive traces has multiple first chip placement region, and at least one described second conductive traces has multiple second chip placement region; And
One luminescence unit, described luminescence unit comprises and is multiplely separately positioned on the first luminous group on multiple described first chip placement region and multiple the second luminous group be separately positioned on multiple described second chip placement region, wherein described in each, the first luminous group comprises one or more the first light-emitting diode chip for backlight unit, and described in each, the second luminous group comprises one or more the second light-emitting diode chip for backlight unit;
Wherein, multiple described first chip placement region and multiple described second mutual alternate intervals arrangement in chip placement region, make the mutual alternate intervals arrangement of multiple described first luminous group and multiple described second luminous group;
Wherein, the light source that described first light-emitting diode chip for backlight unit produces has one first predetermined wavelength, and the light source that described second light-emitting diode chip for backlight unit produces has one second predetermined wavelength, and described second predetermined wavelength is greater than described first predetermined wavelength;
Wherein, when described first light-emitting diode chip for backlight unit has identical surface area with described second light-emitting diode chip for backlight unit, be 1:2 ~ 1:4 by the ratio of the magnitude of current of described first light-emitting diode chip for backlight unit and described second light-emitting diode chip for backlight unit;
Wherein, when identical with the magnitude of current of described second light-emitting diode chip for backlight unit by described first light-emitting diode chip for backlight unit, the ratio of the surface area of described first light-emitting diode chip for backlight unit and described second light-emitting diode chip for backlight unit is 0.8:2 ~ 0.8:4.
2. ray structure as claimed in claim 1, wherein multiple described first light-emitting diode chip for backlight unit is identical with the quantity that multiple described second light-emitting diode chip for backlight unit uses, described first predetermined wavelength is between 400nm to 420nm, described second predetermined wavelength is between 445nm to 465nm, and the colour temperature produced after the mutual mixed light of white light source that produces of the white light source that produces of multiple described first luminous group and multiple described second luminous group is between 2500K to 4500K.
3. ray structure as claimed in claim 1, wherein the first chip placement region described in each has at least two the first chip placement circuits, second chip placement region described in each has at least two the second chip placement circuits, first light-emitting diode chip for backlight unit described in one or more of first luminous group described in each be arranged on corresponding described first chip placement region one of them described on the first chip placement circuit, and the second luminous group described in each one or more described in the second light-emitting diode chip for backlight unit be arranged on corresponding described second chip placement region one of them described on the second chip placement circuit.
4. ray structure as claimed in claim 3, wherein it being put has the multiple described first chip placement circuit of described first light-emitting diode chip for backlight unit and upper storing thereof to have the multiple described second chip placement circuit of described second light-emitting diode chip for backlight unit parallel to each other, make every two adjacent described first luminous groups and described second luminous group parallel to each other and there is identical arrangement pitches, and multiple described first light-emitting diode chip for backlight unit and multiple described second light-emitting diode chip for backlight unit alternate intervals are arranged in one rectangular.
5. ray structure as claimed in claim 1, wherein said substrate also comprises and is multiplely separately positioned on the first radiator structure of the below of multiple described first light-emitting diode chip for backlight unit and multiple the second radiator structure being separately positioned on the below of multiple described second light-emitting diode chip for backlight unit.
6. ray structure as claimed in claim 5, wherein when described first radiator structure and described second radiator structure all use the material with identical heat-sinking capability, the size of described first radiator structure is greater than described second radiator structure, wherein when described first radiator structure and described second radiator structure measure-alike, the heat-sinking capability of the material that described first radiator structure uses is greater than the heat-sinking capability of the material that described second radiator structure uses.
7. ray structure as claimed in claim 5, wherein the size of multiple described first radiator structure and multiple described second radiator structure all reduces gradually from the center of described substrate toward the direction of circumference.
8. ray structure as claimed in claim 7, wherein the size of the size of the multiple described first radiator structure ratio of sequentially successively decreasing toward the direction of circumference from the center of described substrate and the multiple described second radiator structure ratio of sequentially successively decreasing toward the direction of circumference from the center of described substrate is identical.
9. ray structure as claimed in claim 5, wherein said substrate also comprises the soaking construction unit that has multiple described first radiator structure, the conductive structure unit and of the second radiator structure is positioned at the bottom of described conductive structure unit.
10. ray structure as claimed in claim 9, the inside of wherein said soaking construction unit comprises multiple passage of heat separated from one another, and multiple described passage of heat adopt (1), (2) and (3) three one of them, wherein said (1) is: the size of multiple described passage of heat is all identical, and spacing between every two the adjacent described passages of heat direction from the center of described conductive structure unit toward circumference increases gradually; Described (2) are: the size of multiple described passage of heat is all identical, and the bulk density of described soaking construction unit occupied by described passage of heat reduces from the center of described conductive structure unit gradually toward the direction of circumference; Described (3) are: the size of multiple described passage of heat reduces from the center of described conductive structure unit gradually toward the direction of circumference.
11. ray structures as claimed in claim 5, wherein the circumference of the first radiator structure described in each and described second radiator structure is other is provided with multiple passage of heat separated from one another, and multiple described passage of heat adopts (1), (2) and (3) three one of them, wherein said (1) is: the size of multiple passages of heat of the first radiator structure described in each and described second radiator structure is identical, and spacing between every two the described passages of heat direction from the center of corresponding described first radiator structure or described second radiator structure toward circumference increases gradually, described (2) are: the size of multiple passages of heat of the first radiator structure described in each and described second radiator structure is identical, and the bulk density occupied by multiple described passage of heat reduces from the center of corresponding described first radiator structure or described second radiator structure gradually toward the direction of circumference, described (3) are that the size of multiple described passage of heat reduces from the center of corresponding described first radiator structure or described second radiator structure gradually toward the direction of circumference.
12. ray structures as claimed in claim 1, the upper surface of wherein said substrate has one for the storage tank of an accommodating electronic component, the inside of described substrate also comprises one to be had and is multiplely positioned at multiple described first light-emitting diode chip for backlight unit, the conductive structure unit and one of the below of the second light-emitting diode chip for backlight unit is arranged on the thermal resistance structure between described electronic component and described luminescence unit, wherein said substrate, the thermal conductivity of described thermal resistance structure and described conductive structure unit is respectively k1, k2 and k3, the pass of three is k3>k1>k2.
13. 1 kinds, for providing the ray structure of a predetermined whiteness, is characterized in that, described ray structure comprises:
One substrate; And
One luminescence unit, described luminescence unit comprises multiple setting the first luminous group on the substrate and multiple setting the second luminous group on the substrate, wherein described in each, the first luminous group comprises one or more the first light-emitting diode chip for backlight unit, and described in each, the second luminous group comprises one or more the second light-emitting diode chip for backlight unit;
Wherein, multiple described first chip placement region and multiple described second mutual alternate intervals arrangement in chip placement region, make the mutual alternate intervals arrangement of multiple described first luminous group and multiple described second luminous group;
Wherein, the light source that described first light-emitting diode chip for backlight unit produces has one first predetermined wavelength, and the light source that described second light-emitting diode chip for backlight unit produces has one second predetermined wavelength, and described second predetermined wavelength is greater than described first predetermined wavelength;
Wherein, the spectrum produced after the white light source that multiple described first luminous group produces and the mutual mixed light of white light source that multiple described second luminous group produces, calculates gained whiteness value and need fall between 1 ~ 2.5; For two kinds of different high and low colour temperatures, its formula calculating CIE whiteness value is respectively:
W=[Y+800 (x0-x)+1700 (y0-y)]/K; And
W＝[Y+810(x0-x)+1700(y0-y)]/K；
Wherein, W is CIE whiteness value, Y is the Y values (Y-tristimulus value) that described luminescence unit records spectrum gained as calculated, (x0, y0) be the special seat scale value of reference light source in cie color coordinate figure, (x, y) records the CIE coordinate values of spectrum gained as calculated for described luminescence unit, and K is constant.
14. 1 kinds, for providing the ray structure of a predetermined whiteness, is characterized in that, described ray structure comprises:
One substrate, described substrate has at least one the first conductive traces in meandering shape and at least one the second conductive traces in meandering shape;
First light-emitting diode chip for backlight unit of multiple wavelength between 400nm to 420nm, is arranged on the first conductive traces; And
Multiple wavelength is greater than the second light-emitting diode chip for backlight unit of the first light-emitting diode chip for backlight unit, is arranged on the second conductive traces;
Wherein, described first conductive traces and described second conductive traces present mutual alternate intervals spread configuration;
Wherein, when predetermined described multiple first light-emitting diode chip for backlight unit and described multiple second light-emitting diode chip for backlight unit have the close bright dipping gross area, the described second light-emitting diode chip for backlight unit magnitude of current is less than by the described first light-emitting diode chip for backlight unit magnitude of current;
Wherein, when the predetermined magnitude of current by described first light-emitting diode chip for backlight unit and described second light-emitting diode chip for backlight unit is close, the surface area of described first light-emitting diode chip for backlight unit is less than the surface area of described second light-emitting diode chip for backlight unit.
15. ray structures as claimed in claim 14, wherein multiple described first light-emitting diode chip for backlight unit is identical with the quantity that multiple described second light-emitting diode chip for backlight unit uses, and the colour temperature produced after the mutual mixed light of white light source that produces of the white light source that produces of multiple described first luminous group and multiple described second luminous group is between 2500K to 4500K.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103110871 | 2014-03-24 | ||
| TW103110871A TWI538551B (en) | 2014-03-24 | 2014-03-24 | Light-emitting structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104952862A true CN104952862A (en) | 2015-09-30 |
| CN104952862B CN104952862B (en) | 2017-12-12 |
Family
ID=54167410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410627921.0A Expired - Fee Related CN104952862B (en) | 2014-03-24 | 2014-11-10 | Light-emitting structure for providing predetermined whiteness |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104952862B (en) |
| TW (1) | TWI538551B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6600562B1 (en) * | 2002-01-11 | 2003-07-29 | Koninklijke Philips Electronics N.V. | Method of extended color sense and estimation for RGB LED illuminants |
| CN101375202A (en) * | 2005-12-16 | 2009-02-25 | 奥斯兰姆奥普托半导体有限责任公司 | Illumination device |
| CN101473453A (en) * | 2006-01-20 | 2009-07-01 | 科锐Led照明科技公司 | Shifting spectral content in solid state light emitters by spatially separating lumiphor films |
| US20110316014A1 (en) * | 2010-06-29 | 2011-12-29 | Rohm Co., Ltd. | Led module and led lighting device |
| US20130044473A1 (en) * | 2011-08-18 | 2013-02-21 | Kabushiki Kaisha Toshiba | Light emitting device |
-
2014
- 2014-03-24 TW TW103110871A patent/TWI538551B/en not_active IP Right Cessation
- 2014-11-10 CN CN201410627921.0A patent/CN104952862B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6600562B1 (en) * | 2002-01-11 | 2003-07-29 | Koninklijke Philips Electronics N.V. | Method of extended color sense and estimation for RGB LED illuminants |
| CN101375202A (en) * | 2005-12-16 | 2009-02-25 | 奥斯兰姆奥普托半导体有限责任公司 | Illumination device |
| CN101473453A (en) * | 2006-01-20 | 2009-07-01 | 科锐Led照明科技公司 | Shifting spectral content in solid state light emitters by spatially separating lumiphor films |
| US20110316014A1 (en) * | 2010-06-29 | 2011-12-29 | Rohm Co., Ltd. | Led module and led lighting device |
| US20130044473A1 (en) * | 2011-08-18 | 2013-02-21 | Kabushiki Kaisha Toshiba | Light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI538551B (en) | 2016-06-11 |
| TW201538029A (en) | 2015-10-01 |
| CN104952862B (en) | 2017-12-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9241384B2 (en) | Solid state lighting devices with adjustable color point | |
| US7965351B2 (en) | Planar light source, display device and method for manufacturing the same | |
| US9985182B2 (en) | Light-emitting apparatus and color-matching apparatus | |
| CN103779346B (en) | Near ultraviolet or ultraviolet excited LED light-emitting device | |
| US10084119B2 (en) | Light-emitting device | |
| KR101376456B1 (en) | White led module | |
| US9923126B2 (en) | Light emitting device having high color rendering using three phosphor types | |
| CN102270732B (en) | Fluorescent layer structure, and forming method and light emitting diode package structure thereof | |
| CN107431112B (en) | Light emitting device | |
| CN104976547B (en) | Light emitting diode assembly and light emitting diode bulb using same | |
| CN105723531B (en) | Light emitting device | |
| CN107466428A (en) | Light supply apparatus and light-emitting device | |
| JP2009111273A (en) | Light-emitting device | |
| JP6915983B2 (en) | Light emitting device and toning device | |
| JP3183896U (en) | Structure of light mixing type light emitting diode | |
| US8450759B2 (en) | Light emitting diode package structure | |
| JP2013182898A (en) | Light-emitting device and luminaire incorporating the same | |
| CN103363334B (en) | Lamp and light emitting diode module of same | |
| CN101872741B (en) | Dominant wavelength distribution convergent light emitting element and manufacturing method thereof | |
| EP2407706A1 (en) | Warm white light LED lamp with high luminance and high color rendering index and led module | |
| CN104952862A (en) | Light-emitting structure for providing predetermined whiteness | |
| TW201537788A (en) | Light-emitting structure for providing a predetermined whiteness | |
| EP2830093B1 (en) | LED-module with high color rendering index | |
| KR20130041552A (en) | Lighting device | |
| CN102916114B (en) | Light-emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171212 Termination date: 20211110 |