CN104952778A - Plasma processing device and electrostatic chuck thereof and manufacturing method of electrostatic chuck - Google Patents
Plasma processing device and electrostatic chuck thereof and manufacturing method of electrostatic chuck Download PDFInfo
- Publication number
- CN104952778A CN104952778A CN201410124425.3A CN201410124425A CN104952778A CN 104952778 A CN104952778 A CN 104952778A CN 201410124425 A CN201410124425 A CN 201410124425A CN 104952778 A CN104952778 A CN 104952778A
- Authority
- CN
- China
- Prior art keywords
- heat
- thermal treatment
- treatment zone
- conducting plate
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a plasma processing device and an electrostatic chuck thereof and a manufacturing method of the electrostatic chuck. The electrostatic chuck comprises a metal pedestal. Heating devices are arranged on the metal pedestal. Heat-conducting plates are arranged on the heating devices. Ceramic insulating layers are arranged on the heat-conducting plates. Height of the heating devices to a substrate and height of the heat-conducting plates to the substrate are different, and heat-conducting adhesive layers with controllable thickness are arranged between the ceramic insulating layers and the heat-conducting plates so that uniform surface temperature of the ceramic insulating layers or multi-parameter adjustment with specific temperature gradient can be realized. Power supply power of the heating devices can be adjusted, and adjustment of surface temperature of the ceramic insulating layers can be also realized by adjusting height difference of the heating devices of different heating areas, thickness of the heat-conducting plates of different heat areas and thickness of the heat-conducting adhesive layers between the ceramic insulating layers and the heat-conducting plates so that temperature controllability of the electrostatic chuck can be greatly increased, and rapid adjustment of temperature uniformity or specific gradient of different areas of the electrostatic chuck is facilitated.
Description
Technical field
The present invention relates to semiconducter process, more particularly, relate to a kind of electrostatic chuck technical field.
Background technology
In the technical process such as plasma etching or chemical vapour deposition (CVD), often adopt electrostatic chuck (Electro Static Chuck is called for short ESC) to fix, support and transmit substrate (Wafer) and wait for workpiece.Electrostatic chuck is arranged in reaction chamber, and it adopts the mode of electrostatic attraction, and non-mechanical means fixes substrate, can reduce the mechanical loss possible to substrate, and electrostatic chuck is contacted completely with substrate, be conducive to heat transfer.
Existing electrostatic chuck generally includes insulating barrier and zone of heating and supports the metal base that layer is surveyed in described insulating barrier and described heating, is provided with DC electrode, applies electrostatic attraction after the energising of this DC electrode to substrate in insulating barrier; For making electrostatic chuck have enough large programming rate, and then improving the uniformity of substrate etching, a zone of heating being set below insulating barrier, in zone of heating, being provided with heater, in order to improve the temperature of electrostatic chuck surface, realizing the heating object to substrate; Be provided with cooling liquid flowing channel in metal base below zone of heating, it injects cooling fluid and cools electrostatic chuck.
In prior art, because the area of electrostatic chuck is larger, while electrostatic chuck is rapidly heated, be difficult to the homogeneity ensureing each regional temperature of electrostatic chuck, the temperature of zones of different has obvious difference and even forms cold-zone and hot-zone, cause the heating of electrostatic chuck to substrate uneven, the technological effect that plasma etches is brought bad impact by this.Prior art heats uneven technical problem to solve electrostatic chuck, by zone of heating zonal control, but in some plasma processing apparatus, only zone of heating zonal control can not be solved electrostatic chuck temperature problem pockety completely.
Summary of the invention
In order to solve the problems of the technologies described above, the invention discloses a kind of plasma processing apparatus, comprise a vacuum reaction chamber, the electrostatic chuck of one support fixed substrate is set in described vacuum reaction chamber, described electrostatic chuck comprises a metal base, it is characterized in that: described metal base comprises a upper surface, described upper surface is at least positioned at two horizontal planes;
Arrange heater above described metal base, described heater comprises at least the first thermal treatment zone element and the second thermal treatment zone element, and described first thermal treatment zone element and the second thermal treatment zone element lay respectively at above the different level of described metal base upper surface;
Above described heater, heat-conducting plate is set, described heat-conducting plate comprises the first thermal treatment zone heat-conducting plate be positioned at above described first thermal treatment zone element and the second thermal treatment zone heat-conducting plate be positioned at above the second thermal treatment zone element, and the upper surface of described first thermal treatment zone heat-conducting plate and described second thermal treatment zone heat-conducting plate is positioned at different level;
One ceramic insulating layer is positioned at above described first thermal treatment zone heat-conducting plate and described second thermal treatment zone heat-conducting plate, described ceramic insulating layer is preferred for supporting fixing described substrate, described ceramic insulating layer comprises the upper surface contacted with described substrate and the lower surface contacted with described heat-conducting plate, the lower surface of described ceramic insulating layer comprises some projections with certain altitude, forms some gaps between described projection.
Preferably, described projection is positioned on the lower surface of the described ceramic insulating layer above described first thermal treatment zone heat-conducting plate, and/or is positioned on the lower surface of the described ceramic insulating layer above described second thermal treatment zone heat-conducting plate.Described projection can be positioned at the lower surface of whole ceramic insulating layer, also can part the lower surface being positioned at ceramic insulating layer, work and be to make to be formed between the lower surface of ceramic insulating layer and described heat-conducting plate the distance of certain altitude.To be provided with mucilage materials between described ceramic insulating layer and described heat-conducting plate, described mucilage materials is filled between described gap, and the height of described projection equals described mucilage materials thickness.By setting the height of described projection, the distance between the lower surface of ceramic insulating layer and described heat-conducting plate can be defined easily, and then control the thickness of described mucilage materials.
Preferably, described mucilage materials is one or both in silica gel, fluoropolymer.
Preferably, arrange insulating barrier between described heater and described heat-conducting plate, described thickness of insulating layer corresponding to different heating district is identical or not identical.
Preferably, arrange insulating barrier between described heater and described metal base, described thickness of insulating layer corresponding to different heating district is identical or not identical.
Preferably, between the first thermal treatment zone element and described second thermal treatment zone element, heat dam is set, vacuum or heat-barrier material are set in described heat dam.The temperature that described heat dam can realize described first thermal treatment zone element and the second thermal treatment zone element does not interfere with each other, and can carry out independently temperature better and control.
Preferably, described first thermal treatment zone heat-conducting plate and described second thermal treatment zone heat-conducting plate thickness are identical or not identical, are therebetween continuous or discontinuous setting.The thickness of described heat-conducting plate affects the important parameter that heat transmits, and the heat-conducting plate in different heating district can regulate by the quick heating slow-motion row thickness needed for described ceramic insulating layer upper surface corresponding to different heating district.
Preferably, described heater is heater strip or heating material coating.Described heater can adopt the mode of spraying heating material to be fixed on described metal base upper surface, also can adopt, by adhesive insulation layer, heater strip is fixed on metal base upper surface.
Preferably, described metal base inside arranges some cooling channels, and described cooling channel is positioned at different level.
Preferably, the material of described heat-conducting plate is metal material or ceramic material.
Preferably, the difference in height of the different level of described metal base upper surface is more than or equal to 2mm.
Further, disclosed herein as well is a kind of electrostatic chuck, described electrostatic chuck comprises a metal base, and described metal base comprises a upper surface, and described upper surface is positioned at least two horizontal planes;
Above described metal base, heater is set, described heater comprises at least the first thermal treatment zone element and the second thermal treatment zone element, and described first thermal treatment zone element and the second thermal treatment zone element are seated described upper surface respectively different level by insulating barrier forms the first thermal treatment zone upper surface and the second thermal treatment zone upper surface;
Above described heater, heat-conducting plate is set, described heat-conducting plate comprises the first thermal treatment zone heat-conducting plate be positioned at above described first thermal treatment zone element and the second thermal treatment zone heat-conducting plate be positioned at above the second thermal treatment zone element, and the upper surface of described first thermal treatment zone heat-conducting plate and described second thermal treatment zone heat-conducting plate is positioned at different level;
One ceramic insulating layer is positioned at above described first thermal treatment zone heat-conducting plate and described second thermal treatment zone heat-conducting plate, described ceramic insulating layer comprises a upper surface and a lower surface, described upper surface is for supporting fixing described substrate, and described lower surface is at least positioned at two horizontal planes.
Preferably, described ceramic insulating layer lower surface arranges some projections with certain altitude, forms some gaps between described projection.
Preferably, described projection is positioned on the lower surface of the described ceramic insulating layer above described first thermal treatment zone heat-conducting plate, and/or is positioned on the lower surface of the described ceramic insulating layer above described second thermal treatment zone heat-conducting plate.
Preferably, be provided with mucilage materials between described ceramic insulating layer and described heat-conducting plate, described mucilage materials is filled between described gap, and the height of described projection equals described mucilage materials thickness.
Preferably, described heater is heater strip or heating material coating.
Preferably, between the first thermal treatment zone element and described second thermal treatment zone element, heat dam is set, vacuum or heat-barrier material are set in described heat dam.
Further, the invention also discloses a kind of method making electrostatic chuck, comprise the following steps:
Make a metal base, cooling channel is set in described metal base, the upper surface of metal base is arranged at least two horizontal planes;
Place or spraying one layer insulating at the upper surface of described metal base, described insulating barrier is placed or spraying one deck heater, described heater is positioned on the different level of described metal base upper surface, and on different level, form at least the first thermal treatment zone element and the second thermal treatment zone element;
Place above described heater or spray a layer insulating and heat-conducting plate is set on described insulating barrier, described heat-conducting plate at least comprises the first thermal treatment zone heat-conducting plate be positioned at above the first thermal treatment zone element and the second thermal treatment zone heat-conducting plate be positioned at above the second thermal treatment zone element, and described first thermal treatment zone heat-conducting plate and the second thermal treatment zone heat-conducting plate thickness are identical or not identical; And the heat-conducting plate upper surface formed not in same level;
The ceramic insulating layer of supporting substrate is set above described heat-conducting plate, described ceramic insulating layer upper surface is set and supports described substrate, described ceramic insulating layer lower surface is set and is positioned at different level.
Preferably, described ceramic insulating layer lower surface arranges some projections, described projection has identical height, some gaps are formed between described projection, mucilage materials is filled between described ceramic insulating layer and described heat-conducting plate, described mucilage materials is filled in the gap between described projection, forms the adhesive linkage identical with described height of projection.
Preferably, the insulating barrier above and below described heater has viscosity, described heater can be adhesively fixed between described heat-conducting plate and described metal base.
The invention provides the manufacture method of a kind of plasma processing apparatus, its electrostatic chuck and electrostatic chuck, described electrostatic chuck comprises metal base, above metal base, heater is set, above heater, heat-conducting plate is set, above heat-conducting plate, ceramic insulating layer is set, different with the height of heat-conducting plate distance substrate by arranging heater, and the heat conduction adhesive-layer that thickness setting is controlled between ceramic insulating layer and heat-conducting plate, realize to ceramic insulating layer surface temperature evenly or the multi-parameter with particular temperature gradient regulate.The present invention is except can regulating the power of heater, can also by regulating the height fall of different heating district heater, the thickness of different heating district heat-conducting plate, and the thickness of heat conduction adhesive-layer realizes the adjustment to ceramic insulating layer surface temperature between ceramic insulating layer and heat-conducting plate, considerably increase the temperature-controllable of electrostatic chuck, be conducive to regulating the even of electrostatic chuck zones of different temperature or specific gradient fast.
Accompanying drawing explanation
Fig. 1 illustrates plasma-reaction-chamber structural representation of the present invention;
Fig. 2 illustrates electrostatic chuck structural representation of the present invention;
Fig. 3 illustrates the heat dam structural representation between different heating zone device of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
Technical solutions according to the invention are applicable to capacitive coupling plasma reative cell or inductance coupling high type plasma-reaction-chamber, and other use electrostatic chuck to support the plasma-reaction-chamber of pending substrate.Exemplary, Fig. 1 illustrates plasma-reaction-chamber structural representation of the present invention; Described plasma-reaction-chamber is capacitive coupling plasma reative cell, and the distortion that those skilled in the art are made without performing creative labour by the technical scheme that the present invention discloses all belongs to protection scope of the present invention.
Fig. 1 illustrates a kind of plasma-reaction-chamber structural representation, comprises one and is roughly columniform reaction chamber 10, and arrange top electrode 10 corresponding up and down and electrostatic chuck 100 in reaction chamber 10, electrostatic chuck 100 is placed on above a metal support component 30.Electrostatic chuck 100 together with described metal support component 30 as the bottom electrode of described reaction chamber.Top electrode 15 connects gas supply device 13, and top electrode 15 evenly enters the gas distribution grid of plasm reaction cavity simultaneously as reacting gas; Bottom electrode 110 connects radio frequency power source 17, reacting gas is downloaded between upper/lower electrode in the effect of radio frequency power source and is formed plasma 16, plasma 16 carries out physical bombardment or chemical reaction to the substrate 20 be placed on above electrostatic chuck 100, realizes the processing process to substrate 20.Reacted accessory substance and unexhausted gas discharge plasm reaction cavity 10 by aspiration pump 18.
Set temperature adjusting device in electrostatic chuck, to realize regulating the temperature of the substrate 20 that it supports, along with the development of technique, the size of substrate is increasing, this requires that the size of the electrostatic chuck of supporting substrate is increasing, and constantly becoming the large restraining factors of electrostatic chuck in processing technology is that temperature is difficult to reach even.For realizing temperature at the equal control of whole electrostatic chuck surface or controlled be set to different temperature gradients, the heater of electrostatic chuck can be carried out zonal control, meanwhile, other regulating parameter suitably increased except the power of adjustment heater can realize the control to temperature better.
Fig. 2 illustrates the structural representation of electrostatic chuck of the present invention, and as shown in Figure 2, electrostatic chuck comprises metal base 110, arranges cooling liquid flowing channel 115 in metal base, and it is generally used for injecting cooling fluid and cools electrostatic chuck.Metal base upper surface is at least positioned at two horizontal planes, and as upper surface 111 and upper surface 112, for having obvious temperature regulation effect, the difference in height of upper surface 111 and upper surface 112 is more than or equal to 2mm.Because upper surface is positioned at Different Plane, cause the thickness of metal base and uneven.
Heater 130 being set above metal base, because heater 130 is generally conductor material, for avoiding and metal base generation leaky, needing between heater 130 and metal base 110, arrange a layer insulating 120.Heater 130 can be heater strip, and insulating barrier 120, for being wrapped in the insulating barrier of heater 130 outside, also can first spray one deck insulating material at metal base 110 upper surface, more square spraying-and-heating device coating over the insulative material.Preferably, insulating barrier 120 has viscosity, heater 130 can be fixed on described metal base upper surface.Because heater 130 is seated above metal base 110 by insulating barrier 120, and metal base upper surface is positioned at different horizontal planes, therefore described heater forms at least two thermals treatment zone, the difference in height of two thermals treatment zone can be more than or equal to 2mm, the present embodiment is denoted as the first thermal treatment zone element 131 of being positioned at central area and the second thermal treatment zone element 132 around described first thermal treatment zone element 131, those skilled in the art are easy to expect, if metal base upper surface is set to the horizontal plane being positioned at more than three or three, the corresponding thermal treatment zone device that can form more than three or three, for convenience of description, two thermal treatment zone devices of the present embodiment just described in Fig. 2 are described.
Heat-conducting plate 140 is set above heater 130, for being passed to substrate 20 by as far as possible evenly lossless for the heat of heater, heat-conducting plate is generally the good conductor of heat, if aluminium, aluminium alloy etc. also can be the ceramic material of heat conduction, for avoiding that leaky occurs, needing and between heater, insulating barrier 160 is set, preferably, insulating barrier 160 has viscosity, and can be adhesively fixed described heat-conducting plate.Heat-conducting plate above the first corresponding thermal treatment zone element 131 is the first thermal treatment zone heat-conducting plate 141, heat-conducting plate above second thermal treatment zone element 132 is the second thermal treatment zone heat-conducting plate 142, the thickness effect of heat-conducting plate its heater heat is transmitted, therefore the parameter of temperature can be regulated as one, according to actual needs, first thermal treatment zone heat-conducting plate 141 can be identical with the thickness of the second thermal treatment zone heat-conducting plate 142, also can be different.Two adjacent thermal treatment zone devices can be continuous structure, also can independently arrange, if two of subregion heater temperature control separately, interfere with each other for avoiding the temperature between different heating device, heat dam can be set between adjacent two thermal treatment zone devices, as shown in Figure 3, in figure 3, between first thermal treatment zone element 131 and the second thermal treatment zone element 132, heat dam 135 is set, for vacuum or fill a certain amount of heat-barrier material in heat dam 135, the temperature that the width of heat dam 135 can realize the first thermal treatment zone element 131 and the second thermal treatment zone element 132 is independent of each other.Easily expect, described heat dam 135 can extend upwardly to the upper surface of heat-conducting plate 142, first thermal treatment zone heat-conducting plate 141 and the second thermal treatment zone heat-conducting plate 142 are carried out heat insulation setting, to adjust the temperature zonal control of the first thermal treatment zone element 131 and the second thermal treatment zone element 132 pairs of substrates 20 better.
Ceramic insulating layer 150 is set above heat-conducting plate 140, DC electrode 155 is set in ceramic insulating layer 150, for generation of electrostatic attraction fixed substrate 20.Ceramic insulating layer 150 comprises the upper surface 151 be located in the same horizontal plane and the lower surface 152 being at least positioned at two horizontal planes, and the upper surface of ceramic insulating layer 150 is for supporting fixed substrate 20.In order to ceramic insulating layer and heat-conducting plate 140 are bondd fixing, usually between ceramic insulating layer 150 and heat-conducting plate 140, viscose glue is filled, when ceramic insulating layer 150 and heat-conducting plate 140 compress, viscose glue is easy to be extruded the thickness difference flowing out and cause zones of different viscose glue, and then affect the temperature conduction of zones of different, increase uncontrollable parameter.The present invention is arranged in the subregion of ceramic insulating layer 150 lower surface 152 or Zone Full has some protruding 156 of certain altitude, gap 157 is formed each other between protruding 156, when filling viscose glue when compressing ceramic insulating layer 150 and heat-conducting plate 140, viscose glue can be filled between gap 157, because the height of protruding 156 is determined, the protruding height of 156 and the height of viscose glue, can control with the thickness realizing viscose glue.Described mucilage materials can be one in silica gel, fluoropolymer or mixture, and mucilage materials has the characteristic of insulating heat-conductive, in order to ensure its heat-conducting effect, can fill the material such as aluminium oxide, aluminium nitride in silica gel or fluoropolymer.
Different relative to the height of substrate 20 by artificially arranging heater 130, simultaneously, heat-conducting plate 140 is also different relative to the height of substrate 20, and the heat conduction adhesive-layer that thickness setting is controlled between ceramic insulating layer 150 and heat-conducting plate 140, realize ceramic insulating layer 150 upper surface homogeneous temperature or the multi-parameter adjustment with particular temperature gradient.Can only by regulating the adjustment of power realization to temperature of heater in conventional art, and in the present invention, except can regulating the power of heater, can also by regulating the drop of different heating district heater, the thickness of different heating district heat-conducting plate, and the thickness of heat conduction adhesive-layer realizes the adjustment to ceramic insulating layer 150 surface temperature between ceramic insulating layer 150 and heat-conducting plate 140, considerably increase the temperature-controllable of electrostatic chuck, be conducive to regulating the even of electrostatic chuck zones of different temperature or specific gradient fast.
In order to the homogeneous temperature realizing electrostatic chuck regulates, one temperature element (not shown) is set near each heater, described some temperature elements connect a temperature control system (not shown), carry out regulable control by temperature control system is unified, realize regulating the uniform object of electrostatic chuck temperature.
According to the plasma processing apparatus that the above embodiment of the present invention provides, while making electrostatic chuck be rapidly heated, effectively ensure the homogeneity of its each regional temperature, thus make each regional temperature of substrate homogeneous, be conducive to the carrying out of plasma-treating technology, improve the passing rate of processing of substrate.Above-describedly be only the preferred embodiments of the present invention; described embodiment is also not used to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization specification of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (22)
1. a plasma processing apparatus, comprise a vacuum reaction chamber, the electrostatic chuck of one support fixed substrate is set in described vacuum reaction chamber, described electrostatic chuck comprises a metal base, it is characterized in that: described metal base comprises a upper surface, described upper surface is at least positioned at two horizontal planes; Arrange heater above described metal base, described heater comprises at least the first thermal treatment zone element and the second thermal treatment zone element, and described first thermal treatment zone element and the second thermal treatment zone element lay respectively at above the different level of described metal base upper surface;
Above described heater, heat-conducting plate is set, described heat-conducting plate comprises the first thermal treatment zone heat-conducting plate be positioned at above described first thermal treatment zone element and the second thermal treatment zone heat-conducting plate be positioned at above the second thermal treatment zone element, and the upper surface of described first thermal treatment zone heat-conducting plate and described second thermal treatment zone heat-conducting plate is positioned at different level;
One ceramic insulating layer is positioned at above described first thermal treatment zone heat-conducting plate and described second thermal treatment zone heat-conducting plate, and described ceramic insulating layer is for supporting fixing described substrate.
2. plasma processing apparatus according to claim 1, it is characterized in that: described ceramic insulating layer comprises the upper surface contacted with described substrate and the lower surface contacted with described heat-conducting plate, the lower surface of described ceramic insulating layer comprises some projections with certain altitude, forms some gaps between described projection.
3. plasma processing apparatus according to claim 2, it is characterized in that: described projection is positioned on the lower surface of the described ceramic insulating layer above described first thermal treatment zone heat-conducting plate, and/or be positioned on the lower surface of the described ceramic insulating layer above described second thermal treatment zone heat-conducting plate.
4. the plasma processing apparatus according to Claims 2 or 3, it is characterized in that: between described ceramic insulating layer and described heat-conducting plate, be provided with mucilage materials, described mucilage materials is filled between described gap, and the height of described projection equals described mucilage materials thickness.
5. plasma processing apparatus according to claim 4, is characterized in that: described mucilage materials is one or both in silica gel, fluoropolymer.
6. plasma processing apparatus according to claim 1, is characterized in that: arrange insulating barrier between described heater and described heat-conducting plate, and described thickness of insulating layer corresponding to different heating district is identical or not identical.
7. plasma processing apparatus according to claim 1, is characterized in that: arrange insulating barrier between described heater and described metal base, and described thickness of insulating layer corresponding to different heating district is identical or not identical.
8. plasma processing apparatus according to claim 1, is characterized in that: arrange heat dam between the first thermal treatment zone element and described second thermal treatment zone element, arrange vacuum or heat-barrier material in described heat dam.
9. plasma processing apparatus according to claim 1, is characterized in that: described first thermal treatment zone heat-conducting plate and described second thermal treatment zone heat-conducting plate thickness are identical or not identical, are therebetween continuous or discontinuous setting.
10. plasma processing apparatus according to claim 1, is characterized in that: described heater is heater strip or heating material coating.
11. plasma processing apparatus according to claim 1, is characterized in that: described metal base inside arranges some cooling channels, and described cooling channel is positioned at different level.
12. plasma processing apparatus according to claim 1, is characterized in that: the material of described heat-conducting plate is metal material or ceramic material.
13. plasma processing apparatus according to claim 1, is characterized in that: the difference in height of the different level of described metal base upper surface is more than or equal to 2mm.
14. 1 kinds of electrostatic chucks, be positioned at a vacuum reaction chamber, it is characterized in that: described electrostatic chuck comprises a metal base, described metal base comprises a upper surface, and described upper surface is positioned at least two horizontal planes;
Above described metal base, heater is set, described heater comprises at least the first thermal treatment zone element and the second thermal treatment zone element, and described first thermal treatment zone element and the second thermal treatment zone element are seated described upper surface respectively different level by insulating barrier forms the first thermal treatment zone upper surface and the second thermal treatment zone upper surface;
Above described heater, heat-conducting plate is set, described heat-conducting plate comprises the first thermal treatment zone heat-conducting plate be positioned at above described first thermal treatment zone element and the second thermal treatment zone heat-conducting plate be positioned at above the second thermal treatment zone element, and the upper surface of described first thermal treatment zone heat-conducting plate and described second thermal treatment zone heat-conducting plate is positioned at different level;
One ceramic insulating layer is positioned at above described first thermal treatment zone heat-conducting plate and described second thermal treatment zone heat-conducting plate, described ceramic insulating layer comprises a upper surface and a lower surface, described upper surface is for supporting fixing described substrate, and described lower surface is at least positioned at two horizontal planes.
15. electrostatic chucks according to claim 12, is characterized in that: described ceramic insulating layer lower surface arranges some projections with certain altitude, forms some gaps between described projection.
16. electrostatic chucks according to claim 12, it is characterized in that: described projection is positioned on the lower surface of the described ceramic insulating layer above described first thermal treatment zone heat-conducting plate, and/or be positioned on the lower surface of the described ceramic insulating layer above described second thermal treatment zone heat-conducting plate.
17. electrostatic chucks according to claim 12, is characterized in that: be provided with mucilage materials between described ceramic insulating layer and described heat-conducting plate, and described mucilage materials is filled between described gap, and the height of described projection equals described mucilage materials thickness.
18. electrostatic chucks according to claim 12, is characterized in that: described heater is heater strip or heating material coating.
19. electrostatic chucks according to claim 12, is characterized in that: arrange heat dam between the first thermal treatment zone element and described second thermal treatment zone element, arrange vacuum or heat-barrier material in described heat dam.
20. 1 kinds of methods making electrostatic chuck, is characterized in that: comprise the following steps:
Make a metal base, cooling channel is set in described metal base, the upper surface of metal base is arranged at least two horizontal planes;
Place or spraying one layer insulating at the upper surface of described metal base, described insulating barrier is placed or spraying one deck heater, described heater is positioned on the different level of described metal base upper surface, and on different level, form at least the first thermal treatment zone element and the second thermal treatment zone element;
Place above described heater or spray a layer insulating and heat-conducting plate is set on described insulating barrier, described heat-conducting plate at least comprises the first thermal treatment zone heat-conducting plate be positioned at above the first thermal treatment zone element and the second thermal treatment zone heat-conducting plate be positioned at above the second thermal treatment zone element, and described first thermal treatment zone heat-conducting plate and the second thermal treatment zone heat-conducting plate thickness are identical or not identical; And the heat-conducting plate upper surface formed not in same level;
The ceramic insulating layer of supporting substrate is set above described heat-conducting plate, described ceramic insulating layer upper surface is set and supports described substrate, described ceramic insulating layer lower surface is set and is positioned at different level.
The method of 21. making electrostatic chucks according to claim 18, it is characterized in that: described ceramic insulating layer lower surface arranges some projections, described projection has identical height, some gaps are formed between described projection, mucilage materials is filled between described ceramic insulating layer and described heat-conducting plate, described mucilage materials is filled in the gap between described projection, forms the adhesive linkage identical with described height of projection.
22. methods according to claim 18, is characterized in that: the insulating barrier above and below described heater has viscosity, described heater can be adhesively fixed between described heat-conducting plate and described metal base.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410124425.3A CN104952778B (en) | 2014-03-28 | 2014-03-28 | A kind of production method of plasma processing apparatus and electrostatic chuck and electrostatic chuck |
| TW103145977A TWI536486B (en) | 2014-03-28 | 2014-12-29 | A method of manufacturing a plasma processing device, an electrostatic chuck and an electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410124425.3A CN104952778B (en) | 2014-03-28 | 2014-03-28 | A kind of production method of plasma processing apparatus and electrostatic chuck and electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104952778A true CN104952778A (en) | 2015-09-30 |
| CN104952778B CN104952778B (en) | 2018-05-25 |
Family
ID=54167342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410124425.3A Active CN104952778B (en) | 2014-03-28 | 2014-03-28 | A kind of production method of plasma processing apparatus and electrostatic chuck and electrostatic chuck |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104952778B (en) |
| TW (1) | TWI536486B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108054087A (en) * | 2017-12-07 | 2018-05-18 | 德淮半导体有限公司 | Annealing device and method for annealing in wafer bonding |
| CN108346611A (en) * | 2017-01-24 | 2018-07-31 | 中微半导体设备(上海)有限公司 | Electrostatic chuck and preparation method thereof and plasma processing apparatus |
| CN111383885A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | Substrate mounting table capable of improving temperature control precision and plasma processing equipment |
| CN111508886A (en) * | 2018-12-29 | 2020-08-07 | 美光科技公司 | Bond chucks having individually controllable regions and associated systems and methods |
| CN112543520A (en) * | 2019-09-20 | 2021-03-23 | 中微半导体设备(上海)股份有限公司 | Heater, heating method and plasma processor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070076346A1 (en) * | 2005-09-30 | 2007-04-05 | Rajinder Dhindsa | Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same |
| CN101471277A (en) * | 2007-12-27 | 2009-07-01 | 周星工程股份有限公司 | Electrostatic chuck and apparatus for treating substrate including the same |
| CN101924017A (en) * | 2009-06-11 | 2010-12-22 | 细美事有限公司 | Substrate heating unit and substrate treating apparatus including the same |
| KR20120108443A (en) * | 2011-03-24 | 2012-10-05 | 주식회사 디엠에스 | Multi-stack mask layer silicon-oxide etching method using the hybrid plasma source and esc heater |
-
2014
- 2014-03-28 CN CN201410124425.3A patent/CN104952778B/en active Active
- 2014-12-29 TW TW103145977A patent/TWI536486B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070076346A1 (en) * | 2005-09-30 | 2007-04-05 | Rajinder Dhindsa | Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same |
| CN101471277A (en) * | 2007-12-27 | 2009-07-01 | 周星工程股份有限公司 | Electrostatic chuck and apparatus for treating substrate including the same |
| CN101924017A (en) * | 2009-06-11 | 2010-12-22 | 细美事有限公司 | Substrate heating unit and substrate treating apparatus including the same |
| KR20120108443A (en) * | 2011-03-24 | 2012-10-05 | 주식회사 디엠에스 | Multi-stack mask layer silicon-oxide etching method using the hybrid plasma source and esc heater |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108346611A (en) * | 2017-01-24 | 2018-07-31 | 中微半导体设备(上海)有限公司 | Electrostatic chuck and preparation method thereof and plasma processing apparatus |
| CN108054087A (en) * | 2017-12-07 | 2018-05-18 | 德淮半导体有限公司 | Annealing device and method for annealing in wafer bonding |
| CN108054087B (en) * | 2017-12-07 | 2020-05-29 | 德淮半导体有限公司 | Annealing device and annealing method in wafer bonding |
| CN111383885A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | Substrate mounting table capable of improving temperature control precision and plasma processing equipment |
| CN111508886A (en) * | 2018-12-29 | 2020-08-07 | 美光科技公司 | Bond chucks having individually controllable regions and associated systems and methods |
| CN112543520A (en) * | 2019-09-20 | 2021-03-23 | 中微半导体设备(上海)股份有限公司 | Heater, heating method and plasma processor |
| CN112543520B (en) * | 2019-09-20 | 2023-05-30 | 中微半导体设备(上海)股份有限公司 | Heater, heating method and plasma processor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104952778B (en) | 2018-05-25 |
| TW201537656A (en) | 2015-10-01 |
| TWI536486B (en) | 2016-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104952778A (en) | Plasma processing device and electrostatic chuck thereof and manufacturing method of electrostatic chuck | |
| US7141763B2 (en) | Method and apparatus for rapid temperature change and control | |
| KR101653470B1 (en) | Heating plate with diode planar heater zones for semiconductor processing | |
| KR101822318B1 (en) | Thermal plate with planar thermal zones for semiconductor processing | |
| TWI550761B (en) | Heating plate with planar heater zones for semiconductor processing | |
| CN104752136A (en) | Plasma processing device and electrostatic chuck thereof | |
| CN104205307A (en) | Multiplexed heater array using ac drive for semiconductor processing | |
| JPH10223621A (en) | Vacuum treating apparatus | |
| CN104112638A (en) | Plasma reaction chamber and electrostatic chuck thereof | |
| CN202905683U (en) | Substrate bearing device capable of uniformly adjusting surface temperature | |
| CN104752130A (en) | Plasma-processing device and electrostatic chuck thereof | |
| JP2001110885A (en) | Method and device for processing semiconductor | |
| US20130004681A1 (en) | Mini blocker plate with standoff spacers | |
| CN103578899B (en) | Apparatus for processing plasma and electrostatic chuck thereof | |
| CN111383885B (en) | Substrate mounting table capable of improving temperature control precision and plasma processing equipment | |
| CN103578900B (en) | Apparatus for processing plasma and electrostatic chuck thereof | |
| KR20170106760A (en) | Susceptor included in substrate disposition apparatus | |
| CN208430227U (en) | A kind of large area heating plate for vacuum cavity | |
| CN208776838U (en) | A kind of infrared heating fluorescent tube arrangement and CVD heating system | |
| CN110016656B (en) | Chemical vapor deposition chamber | |
| CN103227086B (en) | A kind of slide holder for plasma processing apparatus | |
| CN207760426U (en) | A kind of infrared heating lamp tube device | |
| KR20230106398A (en) | Device for Supporting Substrate and Apparatus for Processing Substrate | |
| TW202320208A (en) | Electrostatic chuck with multi-zone temperature control and plasma processing device capable of dynamically regulating temperature control zones according to processing requirement | |
| KR20040107699A (en) | Wafer block and Reactor for depositing thin film on wafer using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
| CP01 | Change in the name or title of a patent holder |