CN104934521A - Semiconductor light emitting element and illumination device comprising the same - Google Patents

Semiconductor light emitting element and illumination device comprising the same Download PDF

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Publication number
CN104934521A
CN104934521A CN201510114780.7A CN201510114780A CN104934521A CN 104934521 A CN104934521 A CN 104934521A CN 201510114780 A CN201510114780 A CN 201510114780A CN 104934521 A CN104934521 A CN 104934521A
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China
Prior art keywords
light
semiconductor light
emitting elements
optical unit
transparent substrates
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Granted
Application number
CN201510114780.7A
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Chinese (zh)
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CN104934521B (en
Inventor
叶志庭
简奉任
潘锡明
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Epistar Corp
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Formosa Epitaxy Inc
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Priority claimed from US14/218,944 external-priority patent/US20180006199A9/en
Application filed by Formosa Epitaxy Inc filed Critical Formosa Epitaxy Inc
Publication of CN104934521A publication Critical patent/CN104934521A/en
Application granted granted Critical
Publication of CN104934521B publication Critical patent/CN104934521B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

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Abstract

The invention provides a semiconductor light emitting element and an illumination device comprising the same. The semiconductor light emitting element includes a transparent substrate, a light emitting diode (LED) structure and an optical unit. The transparent substrate has a support surface and a second main surface disposed opposite to each other. The LED structure disposed on the support surface forms a first main surface where light emitted from with at least a part of the support surface without the LED structure. The optical unit disposed on the first main surface comprises a covering side facing the transparent substrate and a light dispersion side corresponding to the covering surface. The optical unit further comprises at least one optical structure disposed on the light dispersion side to disperse at least a part of light received from the covering side to different directions corresponding to the wavelength of light. The semiconductor light emitting element can achieve the light emitting effects of omni-directional light emitting, light mixing and dispersion.

Description

Semiconductor light-emitting elements and light-emitting device thereof
Technical field
The invention provides a kind of semiconductor light-emitting elements and light-emitting device thereof, espespecially a kind ofly the semiconductor light-emitting elements of polytropism light source is provided and there is the light-emitting device of this kind of semiconductor light-emitting elements.
Background technology
The light source of only a kind of directive property that light-emittingdiode (light emitting diode, LED) itself sends, not as light source that conventional bulb is a kind of divergence form.Therefore, light-emittingdiode can be restricted in application.For example, Conventional luminescent diode cannot or be difficult to reach required illumination effect in the illumination application of general indoor/outdoor.In addition, the light-emitting device of Conventional luminescent diode only can one side luminous, therefore the light-emitting device of the more traditional general indoor/outdoor illumination of its luminous efficiency (luminance efficiency) is low.
Summary of the invention
The object of the present invention is to provide a kind of semiconductor light-emitting elements and light-emitting device thereof.
One of for achieving the above object, the invention provides a kind of semiconductor light-emitting elements, comprise transparent substrates, LED structure and optical unit, transparent substrates has the supporting surface and the second first type surface that are oppositely arranged; LED structure is arranged on this supporting surface, and formed with not overlapping with this LED structure this supporting surface at least part of can the first first type surface of bright dipping, at least part of light that this LED structure produces is by this transparent substrates and from this second first type surface bright dipping; Optical unit is arranged on this first first type surface, and this optical unit comprises covering limit and light radiation side, and this covering limit is towards this transparent substrates, and the position of this light radiation side corresponds to this covering limit; Wherein, this optical unit also comprises at least one optical texture, is arranged on this light radiation side, and this covering limit received light line is diffused to different directions according to the wavelength of light by this optical texture at least partially.
As the further improvement of an embodiment of the present invention, this semiconductor light-emitting elements also comprises wavelength conversion layer, is arranged between this optical unit and this transparent substrates, and the surface on this covering limit of this optical unit is parallel to the correspondence surface of this wavelength conversion layer.
As the further improvement of an embodiment of the present invention, this optical unit also comprises first and disperses portion and second and disperse portion, covers this first first type surface and this second first type surface of this transparent substrates respectively.
As the further improvement of an embodiment of the present invention, this optical unit also comprises connecting portion, and this connecting portion connects this and first disperses portion and this second disperses portion.
As the further improvement of an embodiment of the present invention, this connecting portion has the end face of a surface towards this transparent substrates, and this connecting portion has recess.
As the further improvement of an embodiment of the present invention, the sectional plane of this recess of this connecting portion has the depression angle of angle between 70 degree to 140 degree.
As the further improvement of an embodiment of the present invention, the angle at this depression angle equals or close to 90 degree.
As the further improvement of an embodiment of the present invention, this connecting portion of this optical element comprises at least one optical texture, and this optical texture is arranged on the surface extending from this first light radiation side of dispersing portion or extend to form from this second light radiation side of dispersing portion.
As the further improvement of an embodiment of the present invention, the sectional plane of this optical texture is for being similar to or equaling triangle, and this triangle comprises the drift angle of angle between 30 degree to 140 degree.
As the further improvement of an embodiment of the present invention, the sectional plane of this optical texture is for being similar to or equaling triangle, and this triangle comprises the drift angle of angle between 50 degree to 140 degree.
As the further improvement of an embodiment of the present invention, the angle of this drift angle is for equal or close to 70 degree.
As the further improvement of an embodiment of the present invention, the quantity of this optical texture is more than one, and those optical textures with array, be staggered or concentric arrangement arrange.
As the further improvement of an embodiment of the present invention, this connecting portion comprises lug boss.
As the further improvement of an embodiment of the present invention, the radius of curvature of this lug boss is between 0.01 mm to 10 mm.
As the further improvement of an embodiment of the present invention, this radius of curvature of this lug boss equals or close to 3 mm.
As the further improvement of an embodiment of the present invention, this optical unit directly contact this wavelength conversion layer at least partially.
As the further improvement of an embodiment of the present invention, this covering limit of this optical unit and the distance of this wavelength convert interlayer are between 0 mm to 2 mm.
As the further improvement of an embodiment of the present invention, this covering limit of this optical unit and this distance of this wavelength convert interlayer equal or close to 0.2 mm.
As the further improvement of an embodiment of the present invention, the distance between this connecting portion of this optical unit and this transparent substrates is between 0 mm to 2 mm.
As the further improvement of an embodiment of the present invention, this distance between this connecting portion of this optical unit and this transparent substrates equals or close to 0.2 mm.
As the further improvement of an embodiment of the present invention, this optical unit directly contact this LED structure at least partially.
As the further improvement of an embodiment of the present invention, the distance between this covering limit and this LED structure of this optical unit is between 0 mm to 2 mm.
As the further improvement of an embodiment of the present invention, this optical texture is for being similar to or equaling pyramid.
One of for achieving the above object, the invention provides a kind of semiconductor light-emitting elements, comprise cube luminescence unit and optical unit, optical unit is arranged at least one light-emitting area of this cube luminescence unit, this optical unit comprises covering limit and light radiation side, this covering limit is towards this cube luminescence unit, and the position of this light radiation side corresponds to this covering limit; Wherein, this optical unit also comprises at least one optical texture, is arranged on this light radiation side, and this covering limit received light line is diffused to different directions according to the wavelength of light by this optical texture at least partially.
As the further improvement of an embodiment of the present invention, this cube luminescence unit comprises at least two relative light-emitting areas, this optical unit also comprises first and disperses portion and second and disperse portion, and this first disperses those light-emitting areas that portion and this second divergent portion do not cover this cube luminescence unit.
One of for achieving the above object, the invention provides a kind of light-emitting device, comprise semiconductor light-emitting elements as above and crystal component, crystal component is arranged on the position near this semiconductor light-emitting elements, and this crystal component is used for receiving the light that this semiconductor light-emitting elements sends.
As the further improvement of an embodiment of the present invention, the distance between this semiconductor light-emitting elements and this crystal component is between 0 cm to 20 cm.
Compared with prior art, beneficial effect of the present invention is: semiconductor light-emitting elements of the present invention can reach the illumination effect of polytropism bright dipping, mixed light and dispersion.
Accompanying drawing explanation
Fig. 1 and Fig. 2 is the structural representation of the semiconductor light-emitting elements of a preferred embodiment of the present invention;
Fig. 3, Fig. 4 and Fig. 5 be the multi-form LED structure of a preferred embodiment of the present invention and wire couple schematic diagram;
Fig. 6 and Fig. 7 is the configuration schematic diagram of the wavelength conversion layer of a preferred embodiment of the present invention;
Fig. 8 is the generalized section of the semiconductor light-emitting elements of another preferred embodiment of the present invention;
Fig. 9 is the generalized section of the semiconductor light-emitting elements of another preferred embodiment of the present invention;
Figure 10 is the schematic perspective view of the semiconductor light-emitting elements of another preferred embodiment of the present invention;
Figure 11 is the schematic diagram of the load bearing seat of a preferred embodiment of the present invention;
Figure 12 is the schematic diagram of the circuit board of a preferred embodiment of the present invention;
Figure 13 is the schematic diagram of the speculum of a preferred embodiment of the present invention;
Figure 14 is the schematic diagram of the quasi cobalt carbon diaphragm of a preferred embodiment of the present invention;
Figure 15 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention;
Figure 16 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention;
Figure 17 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention;
Figure 18, Figure 19 and Figure 20 are the transparent substrates grafting of a preferred embodiment of the present invention or are adhered to the schematic diagram of load bearing seat;
Figure 21 and Figure 22 is the schematic diagram that the transparent substrates of a preferred embodiment of the present invention is adhered to the load bearing seat of tool support;
Figure 23 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention;
Figure 24 is the schematic diagram of the device pedestal of the light-emitting device of another preferred embodiment of the present invention;
Figure 25 is the schematic perspective view of the light-emitting device of another preferred embodiment of the present invention;
Figure 26, Figure 27, Figure 28 and Figure 29 are the transparent substrates of a preferred embodiment of the present invention is arranged at load carrier schematic diagram with point symmetry or line symmetric form;
Figure 30 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention;
Figure 31 and Figure 32 is the schematic diagram of the lampshade of a preferred embodiment of the present invention;
Figure 33 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention;
Figure 34 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention;
Figure 35 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention;
Figure 36 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention;
Figure 37 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention;
Figure 38 to Figure 40 is the schematic diagram of the preferred aspect of the optical unit of Figure 33 to Figure 37 illustrated embodiment of the present invention.
Embodiment
Describe the present invention below with reference to embodiment shown in the drawings.But these execution modes do not limit the present invention, the structure that those of ordinary skill in the art makes according to these execution modes, method or conversion functionally are all included in protection scope of the present invention.
Please refer to Fig. 1 and Fig. 2, Fig. 1 and Fig. 2 is the structural representation of the semiconductor light-emitting elements of a preferred embodiment of the present invention.As shown in Figures 1 and 2, semiconductor light-emitting elements 1 comprises: transparent substrates 2; Supporting surface 210; First first type surface 21A; Second first type surface 21B and at least one LED structure 3.Dull and stereotyped or laminar transparent substrates 2 itself has two major surfaces, and one of them is supporting surface 210, and the LED structure 3 with lighting function can be arranged on this supporting surface 210.The light-emitting area 34 that LED structure 3 is not covered by transparent substrates 2 and the part supporting surface 210 not arranging LED structure 3 are formed jointly can the first first type surface 21A of luminescence.Another major surfaces that transparent substrates 2 is not provided with LED structure 3 is then the second first type surface 21B.Vice versa for aforementioned arrangement mode, and also can all arrange LED structure 3 in two of transparent substrates 2 face.In one embodiment of this invention, LED structure 3 can be arranged at the supporting surface 210 of transparent substrates 2, and it is corresponding to other LED structure 3 being arranged at the second first type surface 21B staggered, when making the LED structure 3 on each of transparent substrates 2 luminous, light is not covered by other LED structure 3 on transparent substrates 2 another side, so can the luminous intensity of corresponding increase semiconductor light-emitting elements 1.Transparent substrates 2 is as sapphire substrate, ceramic substrate, glass substrate, the material of plastic cement or rubber substrate etc. can comprise and is selected from aluminium oxide (Al2O3), magnesium oxide, beryllium oxide, yittrium oxide, thorium oxide, zirconia, lead lanthanum zirconate titanate, GaAs, zinc sulphide, zinc selenide, calcirm-fluoride, magnesium fluoride, the material of carborundum (SiC) or chemical polymerization thing etc., wherein, one of present pre-ferred embodiments adopts sapphire substrate as transparent substrates 2, because sapphire substrate is substantially mono-crystalline structures, not only there is good light transmittance, and heat-sinking capability is good, the life-span of semiconductor light-emitting elements 1 can be extended.But, use traditional sapphire substrate in the present invention, have easily cracked problem, therefore through experimental verification, the better sapphire substrate selecting thickness to be more than or equal to 200 microns (um) of transparent substrates 2 of the present invention, so can reach preferably reliability, and have preferably carrying and light transmission function.In order to make semiconductor light-emitting elements 1 effectively send polytropism light, such as amphicheirality or omni-directional light, semiconductor light-emitting elements 1 of the present invention has the better LED structure selecting rising angle to be greater than 180 degree of a LED structure 3 at least.Correspondingly, the LED structure 3 be arranged on transparent substrates 2 can send past light of advancing away from transparent substrates 2 direction from light-emitting area 34, and LED structure 3 also can be issued to the light that small part enters transparent substrates 2.And the light entering transparent substrates 2 is except from the second first type surface 21B bright dipping of transparent substrates 2, also can never arranging the part supporting surface 210 of LED structure 3 and other surperficial bright dippings of substrate 2.Semiconductor light-emitting elements 1 can at least two-sided bright dipping, multi-direction bright dipping or omnirange bright dipping.In the present invention, the area of the first first type surface 21A or the area of the second first type surface 21B are more than five times of the summation area of the light-emitting area 34 of all LED structures 3 be arranged on its surface, and this is take into account the condition such as luminous efficiency and heat radiation and be preferably allocation ratio.
In addition, another preferred embodiment of the present invention is that the colour temperature difference that the first first type surface 21A of semiconductor light-emitting elements 1 and the second first type surface 21B send is equal to or less than 1500K, makes semiconductor light-emitting elements 1 have illumination effect consistent more comprehensively.Especially, when transparent substrates 2 thickness as previously mentioned, and use the wave-length coverage of bright dipping being more than or equal to 420 nanometers, and/or when being less than or equal to the LED structure 3 of 470 nanometers, the light transmittance of transparent substrates 2 can be more than or equal to 70%.
The present invention is not limited with above-described embodiment.Hereafter sequentially will introduce other preferred embodiment of the present invention, and for the ease of the deviation of more each embodiment and simplified illustration, identical symbol is used to mark identical element in the following embodiments, and be described mainly for the deviation of each embodiment, and no longer repeating part is repeated.
Please refer to Fig. 3, Fig. 4 and Fig. 5, the present invention is in order to obtain power supply to carry out luminescence, and LED structure 3 comprises the first electrode 31A and the second electrode 31B.First electrode 31A and the second electrode 31B are connected wire 23A and second respectively and connect wire 23B and be electrically connected with first on transparent substrates 2.Wherein, Fig. 3, Fig. 4 and Fig. 5 disclose multi-form LED structure 3 and the coupling mode of wire respectively.Fig. 3 is horizontal type LED structure, and its LED structure 3 is formed on the supporting surface 210 of transparent substrates 2, and the first electrode 31A and the second electrode 31B are electrically coupled to first respectively in routing mode and are connected wire 23A and are connected wire 23B with second.Fig. 4 is crystal covering type light-emitting diode structure 3, horizontal type LED structure 3 is inverted also mat first electrode 31A and the second electrode 31B and LED structure 3 and transparent substrates 2 are coupled.First electrode 31A and the second electrode 31B are to weld or bonding way is electrically coupled to first respectively and is connected wire 23A and is connected wire 23B with second.As shown in Figure 5, first electrode 31A and the second electrode 31B is arranged at the not coplanar of LED structure 3, LED structure 3 is arranged with standing manner, the first electrode 31A can be welded or bonding way is connected wire 23A and second respectively and connects wire 23B and be connected with first with the second electrode 31B.
Please refer to Fig. 6 and Fig. 7, semiconductor light-emitting elements 1 of the present invention can more comprise wavelength conversion layer 4, and its selectivity is arranged on the first first type surface 21A or/and the second first type surface 21B, or is directly arranged on LED structure 3.Wavelength conversion layer 4 can directly contact LED structure 3, or a segment distance adjacent with LED structure 3 and directly not contacting.Wavelength conversion layer 4 containing at least one phosphor powder, the phosphor powder of the inorganic or organic material of such as garnet system, sulfate system or silicate etc.Wavelength conversion layer 4 is converted to the light of another kind of wave-length coverage in order to the light sent by least part of LED structure 3.Such as, when LED structure 3 sends blue light, the convertible some blue light of wavelength conversion layer 4 is gold-tinted, and makes semiconductor light-emitting elements 1 finally send white light under blue light and yellow light mix.In addition, because the light source of the first first type surface 21A is mainly from the light that LED structure 3 directly sends, and the light source of the second first type surface 21B is the light sent through transparent substrates 2 from the light of LED structure 3, therefore the light intensity (illumination) of the first first type surface 21A can be different from the light intensity (illumination) of the second first type surface 21B.Therefore, the phosphor powder content corresponding configuration of the wavelength conversion layer 4 on semiconductor light-emitting elements 1, the first first type surface 21A of another preferred embodiment of the present invention and the second first type surface 21B.Better, preferably can from 1 to 0.5 to 1 to 3 relative to the proportion of the phosphor powder content of the wavelength conversion layer 4 at the second first type surface 21B at the phosphor powder content of the wavelength conversion layer 4 of the first first type surface 21A, or preferably can from 1 to 0.5 to 1 to 3 relative to the proportion of the phosphor powder content of the wavelength conversion layer 4 at the first first type surface 21A at the phosphor powder content of the wavelength conversion layer 4 of the second first type surface 21B.So, illumination or the light shape of semiconductor light-emitting elements 1 of the present invention can meet different application demands, and the colour temperature difference that the first first type surface 21A of semiconductor light-emitting elements 1 and the second first type surface 21B sends can be controlled in and is equal to or less than 1500K, to promote wavelength conversion efficiency and the illumination effect of semiconductor light-emitting elements 1.
Please refer to Fig. 8.Fig. 8 depicts the generalized section of the semiconductor light-emitting elements of another preferred embodiment of the present invention.As shown in Figure 8, the semiconductor light-emitting elements 1 of the present embodiment comprise transparent substrates 2, with at least one LED structure 14 of polytropism bright dipping function is provided.Transparent substrates 2 has supporting surface 210 positioned opposite to each other and the second first type surface 21B.LED structure 14 is arranged on the supporting surface 210 of transparent substrates 2.LED structure 14 comprises the first electrode 16 and the second electrode 18, to be electrically connected other device.The light-emitting area 34 that LED structure 14 is not covered by transparent substrates 2, jointly form the first first type surface 21A with the part supporting surface 210 not arranging LED structure 14.
LED structure 14 can comprise substrate 141, n type semiconductor layer 142, active layers 143 and p type semiconductor layer 144.In this embodiment, the substrate 141 of LED structure 14 can couple with transparent substrates 2 by mat wafer binder course 28.Emitting brightness can improve because of the material behavior optimization of wafer binder course 28.For example, the reflectivity of wafer binder course 28, preferably between the reflectivity and the reflectivity of transparent substrates 2 of substrate 141, uses the emitting brightness increasing LED structure 14.In addition, wafer binder course 28 can be transparent viscose glue or other bond material be applicable to.The opposite side that first electrode 16 is arranged on LED structure 14 with the second electrode 18 is relative with wafer binder course 28.First electrode 16 and the second electrode 18 are electrically connected p type semiconductor layer 144 and n type semiconductor layer 142 (annexation of the second electrode 18 and n type semiconductor layer 142 is not shown in Fig. 8) respectively.The upper surface of the first electrode 16 is identical with the level standard essence of the upper surface of the second electrode 18.First electrode 16 and the second electrode 18 can be metal electrode, are so not limited thereto.In addition, semiconductor light-emitting elements 1 also comprises the first connection wire 20, second and connects wire 22 and wavelength conversion layer 4.First connection wire 20 is connected wire 22 with second and is arranged on transparent substrates 2.First connection wire 20 is connected wire 22 and can be plain conductor or other conductive pattern with second, but is not limited thereto.First electrode 16 and the second electrode 18 are connected respectively to first with routing or welding manner and are connected wire 20 and are connected wire 22 with second, but are not limited thereto.Wavelength conversion layer 4 to be arranged on transparent substrates 2 and to cover LED structure 14.In addition, wavelength conversion layer 4 also can be arranged on the second first type surface 21B of transparent substrates 2.
In addition, in this embodiment in order to increase amount of light that light leaves from transparent substrates 2 and make being evenly distributed of bright dipping, the surface of transparent substrates 2 also optionally arranges nonplanar structure 12M.Nonplanar structure 12M can be the geometry of various protrusion or depression, such as pyramid, cone, hemisphere or triangular prism etc., and can be systematicness arrangement or randomness arrangement.Moreover the surface of transparent substrates 2 also alternative arranges class and bores carbon (diamond-like carbon, DLC) film 25 to increase heat conduction and radiating effect.
Please refer to Fig. 9, Fig. 9 depicts the schematic diagram of the semiconductor light-emitting elements of another better alternate embodiment of the present invention.Compared to the embodiment shown in Fig. 8, in the semiconductor light-emitting elements 1 of the present embodiment, the first electrode 16, second electrode 18 and the first wafer binder course 28A are arranged at the identical faces of LED structure 14.First electrode 16 and the second electrode 18 utilize and cover crystal type and be electrically connected on first and be connected wire 20 and be connected wire 22 with second.Wherein, first connects wire 20 and second and connects wire 22 and can extend from the position of the first corresponding electrode 16 and the second electrode 18 respectively and generate.First electrode 16 and the second electrode 18 can be electrically connected on first respectively by the second wafer binder course 28B and be connected wire 20 and be connected wire 22 with second.Second wafer binder course 28B can be conductive projection, and such as gold bump or solder projection, also can be conducting resinl, such as elargol, also can be eutectic layer, such as golden tin (Au-Sn) alloy-layer or low melting point (In-Bi-Sn) alloy-layer, be so not limited thereto.In this embodiment, the first wafer binder course 28A can be vacancy or comprises wavelength conversion layer 4.
Please refer to Figure 10, Figure 10 depicts the schematic perspective view of the semiconductor light-emitting elements of another preferred embodiment of the present invention.As shown in Figure 10, semiconductor light-emitting elements 310 of the present invention comprises transparent substrates 2, at least one LED structure 3, first connecting electrode 311A, the second connecting electrode 311B and at least one wavelength conversion layer 4.LED structure 3 is arranged on the supporting surface 210 of transparent substrates 2, and the first first type surface 21A that formation can be luminous.In this embodiment, the rising angle of LED structure 3 is greater than 180 degree, and at least part of light that LED structure 3 sends can inject transparent substrates 2, and inject light at least partially can from the second first type surface 21B bright dipping of corresponding first first type surface 21A, and inject remainder other surperficial bright dippings from transparent substrates 2 of light, and then reach the illumination effect of polytropism bright dipping of semiconductor light-emitting elements 310.First connecting electrode 311A and the second connecting electrode 311B is arranged at not homonymy or the same side (not being shown in Figure 10) of transparent substrates 2 respectively.First connecting electrode 311A and the second connecting electrode 311B can be respectively first of semiconductor light-emitting elements 310 on transparent substrates 2 and be connected wire and be connected wafer that wire extends with second to external electrode, therefore the first connecting electrode 311A and the second connecting electrode 311B is correspondingly electrically connected at LED structure 3.Wavelength conversion layer 4 at least covers LED structure 3 and is exposed to the first connecting electrode 311A and the second connecting electrode 311B of small part.The light that wavelength conversion layer 4 at least part of absorption LED structure 3 and/or transparent substrates 2 send, and convert the light of another wave-length coverage to, then with the light mixed light do not absorbed by wavelength conversion layer 4, to increase the emission wavelength range of semiconductor light-emitting elements 310, improve the illumination effect of semiconductor light-emitting elements 310.Semiconductor light-emitting elements 310 due to the present embodiment has the first connecting electrode 311A and the second connecting electrode 311B that are arranged at transparent substrates 2 respectively, traditional light-emittingdiode encapsulation procedure can omit, semiconductor light-emitting elements 310 combines with the load bearing seat be applicable to after can completing alone making again, therefore can reach advantages such as promoting overall fine ratio of product, simplified structure and the load bearing seat design variation joined together by increase.
Please refer to Figure 11, one embodiment of the invention use the light-emitting device 11 of at least one aforesaid semiconductor light-emitting component.Light-emitting device 11 comprises load bearing seat 5 and aforesaid semiconductor light-emitting elements.The transparent substrates 2 of semiconductor light-emitting elements, except lying against this load bearing seat 5, also can erect thereon and be coupled to this load bearing seat 5.There is between transparent substrates 2 and load bearing seat 5 first angle theta 1, first angle theta 1 can be fixing or need according to the light shape of light-emitting device and change.The scope of the first angle theta 1 is preferably between 30 degree to 150 degree.
Please refer to Figure 12, the load bearing seat 5 of light-emitting device 11 of the present invention also can comprise circuit board 6, and it is coupled to external power source.Circuit board 6 is also electrically coupled to first on transparent substrates 2 and connects wire and second and connect wire (not being shown in Figure 12), and to be electrically connected with LED structure 3, to make external power source supply LED structure 3 luminous required power supply through circuit board 6.In other preferred embodiment of the present invention, if without arranging this circuit board 6, LED structure 3 also can pass through the first connection wire and the second connection wire (not being shown in Figure 12) is directly electrically connected at load bearing seat 5, and external power source can be powered via load bearing seat 5 pairs of LED structures 3.
Please refer to Figure 13, light-emitting device 11 of the present invention also can comprise speculum or filter 8, is arranged at the second first type surface 21B or the supporting surface 210 of transparent substrates 2.Speculum or filter 8 can reflect the light penetrating this transparent substrates 2 at least partly that this LED structure 3 sends, and part are changed by reflection ray penetrated by this first first type surface 21A.Speculum 8 can comprise at least one metal level or Bragg mirror (Bragg reflector), but not as limit.It is stacking and form that Bragg mirror can have the dielectric film institute of different refractivity by multilayer, or the dielectric film that there is different refractivity by multilayer and multiple layer metal oxide stacking and form.
Please refer to Figure 14, light-emitting device 11 of the present invention also can comprise class and bore carbon (diamond-like carbon, DLC) film 9, wherein on quasi cobalt carbon diaphragm 9 supporting surface 210 that is arranged at transparent substrates 2 and/or the second first type surface 21B, to increase heat conduction and radiating effect.
Please refer to Figure 15.Figure 15 depicts the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.As shown in figure 15, the light-emitting device 10 of the present embodiment comprises load bearing seat 26 and at least one aforesaid semiconductor light-emitting elements.Semiconductor light-emitting elements comprises transparent substrates 2 and at least one LED structure 14.Semiconductor light-emitting elements can be partially submerged in load bearing seat 26.The electrode 30,32 of load bearing seat 26 is electrically connected the connection wire 20,22 of semiconductor light-emitting elements.Power supply can pass through electrode 30,32 and correspondingly provides driving voltage V+, and V-to emit beam L to drive LED structure 14.LED structure 14 comprises the first electrode 16 and the second electrode 18, is electrically connected the first connection wire 20 respectively and is connected wire 22 with second, be so not limited thereto in routing mode.In addition, the beam angle of LED structure 14 is greater than 180 degree or have multiple light-emitting area, makes light-emitting device 10 can from the first first type surface 21A and the second first type surface 21B bright dipping.Moreover because some light also can emitted by four sidewalls of LED structure 14 and/or transparent substrates 2, light-emitting device 10 correspondingly can have the characteristic of multifaceted light-emitting, six luminescences or omnirange bright dipping.
Semiconductor light-emitting elements more comprises wavelength conversion layer 4, and selectivity is arranged on LED structure 14, first first type surface 21A or the second first type surface 21B.At least part of light that wavelength conversion layer 4 Absorbable rod LED structure 14 sends also is converted to the light of another wave-length coverage, sends specific photochromic or light that wave-length coverage is larger to make light-emitting device 10.For example, when LED structure 14 produces blue light, the blue light of part is convertible into as gold-tinted after being irradiated to wavelength conversion layer 4, and light-emitting device 10 can send the white light become with yellow light mix by blue light.In addition, transparent substrates 2 can in parallel or non-parallel manner directly or non-immediate be fixed on load bearing seat 26.For example, be fixed on load bearing seat 26 by by the sidewall of transparent substrates 2, transparent substrates 2 can erectly be fixedly arranged on load bearing seat 26 or transparent substrates 2 can be horizontally placed on load bearing seat 26, is so not limited thereto.The better material comprising high heat-conduction coefficient of transparent substrates 2, and the heat that LED structure 14 produces can correspondingly be emitted to load bearing seat 26 via transparent substrates 2, therefore high-power LED structure can be applicable to light-emitting device of the present invention.In addition, in one of preferred embodiment of the present invention, under same power condition, the transparent substrates 12 of light-emitting device of the present invention is formed the LED structure of multiple smaller power, to make full use of the thermal conduction characteristic of transparent substrates 12, the power of each LED structure 14 of such as the present embodiment can be equal to or less than 0.2 watt, but not as limit.
Please refer to Figure 16.Figure 16 depicts the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.Compared to the light-emitting device shown in Figure 15, the light-emitting device 10 ' of the present embodiment comprises multiple LED structure 14, and LED structure 14 is at least partially electrically connected to each other in a series arrangement.Each LED structure 14 comprises the first electrode 16 and the second electrode 18.First electrode 16 of one of them LED structure 14 is arranged on the outer end of series connection and is electrically connected at the first connection wire 20, and the second electrode 18 of another LED structure 14 is arranged on the other end of series connection and is electrically connected at the second connection wire 22, is so not limited thereto.Multiple LED structure 14 can serial or parallel connection mode be electrically connected to each other.Multiple LED structure 14 can send identical coloured light, such as, be all blue light diode; Or multiple LED structure 14 sends different color light respectively, to meet different application demand.Light-emitting device 10 ' of the present invention also can send more kinds of different coloured light by wavelength conversion layer 4.
Please refer to Figure 17.Figure 17 depicts the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.Compared to the light-emitting device shown in Figure 15 and Figure 16, the light-emitting device 50 of the present embodiment can more comprise support 51, in order to link semiconductor light-emitting elements and load bearing seat 26.The transparent substrates 2 of semiconductor light-emitting elements is fixed on the side of support 51 by element knitting layer 52, and the opposite side of support 51 can be embedded at or insert load bearing seat 26.In addition, support 51 has elasticity and can form angle between transparent substrates 2 and load bearing seat 26, and angle is between 30-150 degree.The material of support 51 can comprise be selected from aluminium, copper, composite metal, electric wire, pottery, printed circuit board (PCB) or other be applicable to material.
Please refer to Figure 18, Figure 19 and Figure 20, when the transparent substrates 2 in the present invention is arranged on load bearing seat 5, one of preferred embodiment can pass through grafting or bonding mode to reach the joint of transparent substrates 2 and load bearing seat 5.
As shown in figure 18, when transparent substrates 2 is arranged on load bearing seat 5, transparent substrates 2 is plugged in the single slot 61 of load bearing seat 5, and makes semiconductor light-emitting elements be electrically coupled to slot 61 through connection wire.LED structure (not being shown in Figure 18) on transparent substrates 2 is electrically coupled to power supply through load bearing seat 5, and at least part of conductive pattern on transparent substrates 2 or connect wire and extend the edge being connected to transparent substrates 2, and be integrated into the golden finger structure or electric connection port with multiple conductive contact blade, be such as electrically connected port and can be aforesaid connecting electrode 311A and connecting electrode 311B (not being shown in Figure 18).When transparent substrates 2 is plugged in slot 61, LED structure (not being shown in Figure 18) can obtain power supply by load bearing seat 5, and transparent substrates 2 correspondingly can be fixed on the slot 61 of load bearing seat 5.
Please refer to Figure 19, Figure 19 is the structural representation that transparent substrates 2 is plugged in multiple slots of load bearing seat 5.In this embodiment, transparent substrates 2 has two pin configuration, and one of them pin is the wafer anode of semiconductor light-emitting elements, and another pin is then the wafer negative pole of semiconductor light-emitting elements.Two pins all have at least one conductive contact blade using as Port.Accordingly, load bearing seat 5 has at least two slots 61 conformed to pin inserting surface size, makes transparent substrates 2 can be engaged in load bearing seat 5 smoothly, and allows LED structure obtain power supply.
Please refer to Figure 20.Transparent substrates 2 is engaged in load bearing seat 5 by element knitting layer.In the process engaged, welding can be done through metal materials such as gold, tin, indium, bismuth, silver and assist and engage transparent substrates 2 and load bearing seat 5.Or, also can make the silica gel of apparatus conductivity or the auxiliary fixing transparent substrates 2 of epoxy resin on load bearing seat 5, make the conductive pattern of semiconductor light-emitting elements or connection wire can pass through element knitting layer and be correspondingly electrically connected at load bearing seat.
Please refer to Figure 21 and Figure 22.The load bearing seat 5 of the light-emitting device 11 of the present embodiment can be substrate, and baseplate material can comprise and is selected from aluminium, copper, composition metal, electric wire, pottery or printed circuit board (PCB) etc. containing aluminium.The surface of load bearing seat 5 or side have at least one support 62.Support 62 and load bearing seat 5 can be two mechanism member be separated from each other, or the mechanism member of integration.Semiconductor light-emitting elements can pass through bonding mode and couples mutually with support 62, namely by element knitting layer 63, transparent substrates 2 is fixed on load bearing seat 5.There is between load bearing seat 5 and transparent substrates 2 first angle theta 1 as the aforementioned.The unsupported surface of load bearing seat 5 also can arrange semiconductor light-emitting elements, to promote the illumination effect of light-emitting device 11.In addition, semiconductor light-emitting elements also can pass through inserting mode connection bracket 62 (not being shown in Figure 21 and Figure 22), namely by connector in conjunction with semiconductor light-emitting elements and support (and/or support and load bearing seat), so that transparent substrates 2 is fixed on load bearing seat 5.Because load bearing seat 5 and support 62 are bent mechanism member, because this increasing the flexibility of the present invention when applying; Also can pass through that to use the semiconductor light-emitting elements of different emission wavelength to be combined into difference photochromic simultaneously, make light-emitting device 11 bright dipping have variability with satisfied different demand.
Please refer to Figure 23.As shown in figure 23, the light-emitting device of the present embodiment comprises at least one semiconductor light-emitting elements 1 and load bearing seat 5.Load bearing seat 5 comprises at least one support 62 and at least one circuit pattern P.One end of the transparent substrates of semiconductor light-emitting elements 1 couples mutually with support 62, to avoid or to reduce the screening effect of support 62 pairs of semiconductor light-emitting elements 1 bright dipping.The material of load bearing seat 5 can comprise be selected from aluminium, copper, containing materials such as aluminium composite metal, electric wire, pottery or printed circuit board (PCB)s.Support 62 is cut from a part for load bearing seat 5 and is bent an angle (the first angle theta 1 as shown in Figure 21 and Figure 22) and formed.Circuit pattern P is arranged on load bearing seat 5, and circuit pattern P has at least one group of electrical end points to be electrically connected power supply.Separately some extends to be electrically connected semiconductor light-emitting elements 1 on support 62 circuit pattern P, and the circuit pattern P making semiconductor light-emitting elements 1 can pass through load bearing seat 5 is electrically connected at power supply.In addition, load bearing seat 5 more can comprise at least one hole H or at least one breach G, makes fixture load bearing seat 5 and other assemblies be made further structure according to light-emitting device application scenarios fill as screw, nail or latch etc. can pass through this hole H or breach G or install.Meanwhile, the setting of hole H or breach G also increases the area of dissipation of load bearing seat 5, promotes the radiating effect of light-emitting device.
Please refer to Figure 24.Figure 24 depicts the schematic perspective view of the device pedestal of the light-emitting device of another preferred embodiment of the present invention.As shown in figure 24, the device pedestal 322 of the present embodiment comprises load bearing seat 5 and at least one support 62.Compared to the embodiment of Figure 23, the support 62 of the present embodiment comprises at least one stripes 342 and breach 330.Electrode 30,32 is arranged at the both sides of breach 330 respectively, and stripes 342 at least forms the abutment wall of breach 330.The corresponding breach 330 of semiconductor light-emitting elements of the present invention couples with support 62.The connection wire of semiconductor light-emitting elements is electrically connected at electrode 30,32, makes semiconductor light-emitting elements can pass through circuit pattern on support 62 and load bearing seat 5 and power supply electric property coupling and be driven.The size of breach 330 can be not less than the main light-emitting area of semiconductor light-emitting elements, and the bright dipping of semiconductor light-emitting elements can not be covered by support 62.Junction between support 62 and load bearing seat 5 can be movable design, and angle between support 62 and load bearing seat 5 can optionally be adjusted.
Please refer to Figure 24 and Figure 25.Figure 25 depicts the schematic perspective view of the light-emitting device of another preferred embodiment of the present invention.Compared to the embodiment of Figure 24, the light-emitting device 302 shown in Figure 25 more comprises at least one support 62 with multiple breach 330.Multiple breach 330 is arranged at two relative edges of support 62 respectively, and stripes 342 at least forms the abutment wall of each breach 330.Multiple semiconductor light-emitting elements 310 is corresponding with multiple breach 330 to be arranged, and the circuit pattern of each semiconductor light-emitting elements 310 or connecting electrode (not being shown in Figure 25) are corresponding with electrode 30 and electrode 32 respectively arranges and electrically connect.The light-emitting device 302 of the present embodiment further can comprise multiple support 62, and support 62 is arranged between semiconductor light-emitting elements 1 and load bearing seat 5.The length of support 62 can essence between 5.8-20 micron (um).Each angle be provided with between the support 62 of semiconductor light-emitting elements and load bearing seat 5 can optionally adjust separately.In other words, the angle between load bearing seat 5 and at least one support 62 can be different from the angle between load bearing seat 5 and other support 62, to reach required illumination effect, but not as limit.In addition, also the combination with the semiconductor light-emitting elements of different emission wavelength range can be set in same supports or different support, make the color effect of light-emitting device abundanter.
In order to improve brightness and improve illumination effect, on the load bearing seat that multiple semiconductor light-emitting elements with transparent substrates 2 is arranged in such as previous embodiment by the light-emitting device of another preferred embodiment of the present invention simultaneously or other load carriers, now can adopt point symmetry or line symmetric arrays mode is arranged, namely multiple semiconductor light-emitting elements with transparent substrates 2 is arranged on load carrier with the form of point symmetry or line symmetry.Please refer to light-emitting device 11 vertical view of Figure 26, Figure 27, Figure 28 and Figure 29, the light-emitting device 11 of each embodiment arranges multiple semiconductor light-emitting elements on various difform load carrier 60, and configure with the form of point symmetry or line symmetry, enable the bright dipping of light-emitting device 11 of the present invention evenly (LED structure omits signal).The light-out effect of light-emitting device 11 also can be done further adjustment again by the size changing the first above-mentioned angle and improve.As shown in figure 26, press from both sides an angle of 90 degrees arrangement in point symmetry mode between semiconductor light-emitting elements, now see all just at least two semiconductor light-emitting elements from any surface the four sides of light-emitting device 11 toward light-emitting device 11.As shown in figure 27, between the semiconductor light-emitting elements of light-emitting device 11, angle is less than 90 degree.As shown in figure 28, the semiconductor light-emitting elements of light-emitting device 11 is arranged along the edge of load carrier 60.As shown in figure 29, between the semiconductor light-emitting elements of light-emitting device, angle is greater than 90 degree.Another preferred embodiment (not being shown in figure) of the present invention, multiple semiconductor light-emitting elements can asymmetric arrangement mode, and the concentrating at least partially or scattering device of multiple semiconductor light-emitting elements, to reach the light shape needs of light-emitting device 11 when the different application.
Please refer to Figure 30.Figure 30 depicts the generalized section of the light-emitting device of another preferred embodiment of the present invention.As shown in figure 30, light-emitting device 301 comprises semiconductor light-emitting elements 310 and support 321.Support 321 comprises breach 330, and semiconductor light-emitting elements 310 is corresponding with breach 330 arranges.In the present embodiment, the outside of support 321 also can be used as pin or is bent into connection pad needed for surface soldered, to fix and/or to be electrically connected at other circuit elements.The light-emitting area of semiconductor light-emitting elements 310 is arranged in breach 330, no matter whether support 321 is light transmissive material, light-emitting device 301 all can possess multiaspect or six luminous illumination effects.
Please refer to Figure 31, is the light-emitting device of the specific embodiment of the invention.Light-emitting device comprises tubular lampshade 7, at least one semiconductor light-emitting elements 1 and load carrier 60.Semiconductor light-emitting elements 1 is arranged on load carrier 60, and semiconductor light-emitting elements 1 is at least partially positioned at the space that tubular lampshade 7 is formed.Refer again to the section signal of Figure 32.When multiple semiconductor light-emitting elements 1 is arranged within lampshade 7, be with mode spaced apart not parallel to each other between the first first type surface 21A of each semiconductor light-emitting elements 1.In addition, being arranged at least partially in space that lampshade 7 formed of multiple semiconductor light-emitting elements 1, and be not close to the inwall of lampshade 7.Preferred embodiment is, the distance D between semiconductor light-emitting elements 1 with lampshade 7 can be equal or be greater than 500 microns (μm); But encapsulating mode can also form lampshade 7, and make lampshade 7 coated at least partly and be directly contacted with semiconductor light-emitting elements 1.
Figure 33 to Figure 37 is the schematic diagram in order to send the light-emitting device 10 of dazzling light of different embodiments of the invention.As shown in figure 33, light-emitting device 10 optical unit 70 that can comprise support 62, be arranged on the semiconductor light emitting unit 1 on support 62 and be arranged on as one of semiconductor light emitting unit 1 assembly on semiconductor light emitting unit 1.Semiconductor light emitting unit 1 can comprise the structure of the polytropism light source of at least two-sided bright dipping as shown in previous embodiment of the present invention.Semiconductor light emitting unit 1 can be card-type, strip type, clavate type, Cubic or candle shape type.Optical unit 70 can comprise covering limit 72 and light radiation side 74.Cover limit 72 and light radiation side 74 toward each other and correspondingly to arrange.When optical unit 70 is arranged on semiconductor light emitting unit 1, cover limit 72 towards semiconductor light emitting unit 1.Optical unit 70 also comprises at least one optical texture 76, is arranged on light radiation side 74.At least part of surface that light radiation side 74 does not arrange optical texture 76 can be tabular surface.Optical texture 76 can be similar to or equal pyramid or rhombus at least partially.The quantity of optical texture 76 effect and can be one or more surely on demand.When the quantity of optical texture 76 is more than one, optical texture 76 can array, be staggered or concentric arrangement arrange, as shown in Figure 38 to Figure 40.Optical texture 76 can will cover exhaling from different directions at least partially of limit 72 received light line.Light can according to wavelength of light and the difference of refractive index and corresponding change between optical texture 76 to surrounding medium (as air) by refraction angle during optical texture 76.Specifically, the present embodiment semiconductor light emitting unit 1 comprises the transparent substrates 2 with supporting surface 210 and the second first type surface 21B be oppositely arranged, and is arranged on the LED structure 14 on the supporting surface 210 of transparent substrates 2.LED structure 14 and at least part of supporting surface 210 not arranging LED structure 14 are formed jointly can the first first type surface 21A of bright dipping.At least part of light that LED structure 14 sends can through transparent substrates 2 and by the second first type surface 21B bright dipping.The quantity of LED structure 14 can be one or more.Optical unit 70 is arranged on the first first type surface 21A of semiconductor light emitting unit 1, and wavelength conversion layer 4 can be arranged between optical unit 70 and transparent substrates 2.The surperficial essence covering limit 72 is parallel to the correspondence surface of wavelength conversion layer 4.
In addition, as shown in figure 33, optical unit 70 also can comprise first and disperses portion 78, second and disperse portion 80 and connecting portion 82.Connecting portion 82 is connected to first and disperses portion 78 and second and disperse between portion 80, makes the cutaway view of optical unit 70 can be U-shaped structure.When optical unit 70 is in conjunction with semiconductor light emitting unit 1, first disperses portion 78 and second disperses the first first type surface 21A and the second first type surface 21B that portion 80 covers transparent substrates 2 respectively.The inner surface 821 of connecting portion 82 towards the end face 2a of transparent substrates 2, and can form recess 84 at inner surface 821.The cutaway view of the recess 84 of connecting portion 82 has depression angle θ 2, and its angle can between 70 degree to 140 degree.Depression angle θ 2 is better can equal or close to 90 degree.In this embodiment, the outer surface 823 of connecting portion 82 extends from light radiation side 74 and can be plane.Light can disperse via the outer surface 823 of connecting portion 82 and first the light radiation side 74 outwards bright dipping that portion 80 is dispersed in portion 78 and second.
Compared to Figure 33 illustrated embodiment, the optical unit 70 of the light-emitting device 10 of another embodiment as shown in Figure 34 of the present invention is also alternative comprises at least one optical texture 76 be arranged on the outer surface 823 of connecting portion 82, that is disperse portion 78 and second at the connecting portion 82, first of optical unit 70 and disperse in portion 80 and be equipped with optical texture 76, the light that light-emitting device 10 is produced outwards can be dispersed via the outer surface 823 of optical unit 70 and light radiation side 74.In another embodiment shown in Figure 35 of the present invention, the connecting portion 82 of optical unit 70 can comprise lug boss 86.The scope of the radius of curvature of lug boss 86 can between 0.01 mm to 10 mm, and the preferred values of the radius of curvature of lug boss 86 equals or close to 3 mm.Lug boss 86 can be used to semiconductor light emitting unit 1 (or LED structure 14) outgoing and light through optical unit 70 top is outwards dispersed.
As shown in Figure 33 to Figure 35, be arranged on the first cutaway view dispersing the optical texture 76 that portion 78 or the second disperses in portion 80 and can be and be similar to or equal triangle, and described triangle has vertex angle theta 3, its angle can between 30 degree to 140 degree.Further, the optical texture 76 be arranged on the outer surface 823 of connecting portion 82 also can be and is similar to or equals triangle, and described triangle has vertex angle theta 3, and its angle can between 50 degree to 140 degree.Be arranged on first to disperse portion 78, second and disperse that the vertex angle theta 3 of the optical texture 76 on portion 80 and/or connecting portion 82 is better to be equaled or close to 70 degree.
Described in the several embodiments mentioned according to the present invention, at least part of optical unit 70 can directly contact wavelength conversion layer 4.But in other embodiments of the invention, the distance D1 of existence range between 0 mm to 2 mm between the covering limit 72 of optical unit 70 and wavelength conversion layer 4.The covering limit 72 of optical unit 70 and the preferred values of the spacing D1 of wavelength conversion layer 4 can equal or close to 0.2 mm.Similarly, also can the distance D2 of existence range between 0 mm to 2 mm between the connecting portion 82 of optical unit 70 and the end face 2a of transparent substrates 2.Connecting portion 82 and the preferred values of the spacing D2 of end face 2a can equal or close to 0.2 mm.In addition, also can the distance D3 of existence range between 0 mm to 2 mm between the covering limit 72 of optical unit 70 and LED structure 14.Because of wavelength conversion layer 4 can be laid on LED structure 14 therefore, distance D3 is similar to distance D1 usually.
Refer to Figure 36, Figure 36 is the schematic diagram of the light-emitting device 11 of another preferred embodiment of the present invention.Embodiment illustrated in fig. 23 compared to the present invention, light-emitting device 11 also can comprise the optical unit 70 being arranged on semiconductor light emitting unit 1, and coated optical unit 70 and semiconductor light emitting unit 1 and have with crystal photo with or the crystal component 88 of approximate optical effect.Specifically, the light-emitting device 11 of the present embodiment can comprise load bearing seat 5, is connected to three supports 62 of load bearing seat 5, is separately positioned on the semiconductor light emitting unit 1 of those supports 62 and is used for the crystal component 88 of coated semiconductor light emitting unit 1.Those supports 62 with semiconductor light emitting unit 1 can be symmetricly set on load bearing seat 5.Any one of those semiconductor light emitting unit 1 can comprise at least two light-emitting areas be oppositely arranged, and the optical unit 70 with multiple optical texture 76 can be arranged in those light-emitting areas of semiconductor light emitting unit 1, namely semiconductor light emitting unit 1 is folded between optical texture 76.As shown in Figure 38 to Figure 40, optical unit 70 can be the chip component be attached on semiconductor light emitting unit 1.Crystal component 88 can have the space for holding semiconductor luminescence unit 1 and optical texture 76.Distance between each semiconductor light-emitting elements 1 and crystal component 88 can between 0 cm to 20 cm.The light that semiconductor light-emitting elements 1 produces can be dispersed via the optical texture 76 of optical unit 70, reflected further by crystal component 88 again, make light-emitting device 11 of the present invention can provide dazzling dazzling visual effect and can be applicable to the decorating ceiling lamp of such as Crystal lamp.
Refer to Figure 37, Figure 37 is the element explosive view of the semiconductor light emitting unit 1 ' of another preferred embodiment of the present invention.Semiconductor light emitting unit 1 ' can comprise cube luminescence unit 90 and optical unit 70.Cube luminescence unit 90 can comprise at least two light-emitting areas 92 be oppositely arranged.Optical unit 70 is arranged at least one light-emitting area 92 of cube luminescence unit 90.When optical unit 70 and cube luminescence unit 90 in conjunction with time, first of optical unit 70 is dispersed portion 78 and second and is dispersed portion 80 and cover two relative light-emitting areas 92 respectively, and the covering limit 72 of optical unit 70 is towards cube luminescence unit 90.Relative with covering limit 72 in the light radiation side 74 that multiple optical texture 76 is arranged on optical unit 70, so that foundation optical wavelength and the refractive index difference between optical texture 76 and surrounding medium at least partially that cover the light that limit 72 receives are dispersed toward different directions.
Distance D1 between optical unit 70 and cube luminescence unit 90, the medium in D2, D3 can be viscose glue, air or vacuum state.Optical unit 70 is made by optical material, is used for conducting the light that luminescence unit 90 produces, and through the optical texture 76 being arranged on light radiation side 74 and outer surface 823, light is dispersed portion 78, second from first and disperse portion 80 and connecting portion 82 is derived.Therefore, optical unit 70 has leaded light and light disperses function to represent magnificent dazzling effect.Optical texture 76 can be polygonal cone, as pyrometric cone, quadrangular pyramid etc.Outwards dispersed by the light therethrough optical texture 76 of optical unit 70, therefore the light that semiconductor light emitting unit 1 sends has scalar property's optical characteristics, and beautiful effect of shadow can be dazzled in order to provide.
In above-mentioned multiple embodiment of the present invention, any embodiment has identical structure and explanation with the element with identical numbering of other embodiment, therefore does not repeat to be illustrated.
Be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, technical scheme in the present invention in each execution mode also can through appropriately combined, forms other execution modes that it will be appreciated by those skilled in the art that and belong to a part of the present invention equally.
A series of detailed description listed is above only illustrating for feasibility execution mode of the present invention; they are also not used to limit the scope of the invention, all do not depart from the skill of the present invention equivalent implementations done of spirit or change all should be included within protection scope of the present invention.

Claims (27)

1. a semiconductor light-emitting elements, is characterized in that comprising:
Transparent substrates, has the supporting surface and the second first type surface that are oppositely arranged;
LED structure, be arranged on this supporting surface, and formed with not overlapping with this LED structure this supporting surface at least part of can the first first type surface of bright dipping, at least part of light that this LED structure produces is by this transparent substrates and from this second first type surface bright dipping;
Optical unit, is arranged on this first first type surface, and this optical unit comprises covering limit and light radiation side, and this covering limit is towards this transparent substrates, and the position of this light radiation side corresponds to this covering limit;
Wherein, this optical unit also comprises at least one optical texture, is arranged on this light radiation side, and this covering limit received light line is diffused to different directions according to the wavelength of light by this optical texture at least partially.
2. semiconductor light-emitting elements as claimed in claim 1, is characterized in that this semiconductor light-emitting elements also comprises:
Wavelength conversion layer, is arranged between this optical unit and this transparent substrates, and the surface on this covering limit of this optical unit is parallel to the correspondence surface of this wavelength conversion layer.
3. semiconductor light-emitting elements as claimed in claim 1 or 2, is characterized in that, this optical unit also comprises first and disperses portion and second and disperse portion, covers this first first type surface and this second first type surface of this transparent substrates respectively.
4. semiconductor light-emitting elements as claimed in claim 3, it is characterized in that, this optical unit also comprises connecting portion, and this connecting portion connects this and first disperses portion and this second disperses portion.
5. semiconductor light-emitting elements as claimed in claim 4, it is characterized in that, this connecting portion has the end face of a surface towards this transparent substrates, and this connecting portion has recess.
6. semiconductor light-emitting elements as claimed in claim 5, it is characterized in that, the sectional plane of this recess of this connecting portion has the depression angle of angle between 70 degree to 140 degree.
7. semiconductor light-emitting elements as claimed in claim 6, is characterized in that, the angle at this depression angle equals or close to 90 degree.
8. semiconductor light-emitting elements as claimed in claim 4, it is characterized in that, this connecting portion of this optical element comprises at least one optical texture, and this optical texture is arranged on the surface extending from this first light radiation side of dispersing portion or extend to form from this second light radiation side of dispersing portion.
9. semiconductor light-emitting elements as claimed in claim 1 or 2, it is characterized in that, the sectional plane of this optical texture is for being similar to or equaling triangle, and this triangle comprises the drift angle of angle between 30 degree to 140 degree.
10. semiconductor light-emitting elements as claimed in claim 8, it is characterized in that, the sectional plane of this optical texture is for being similar to or equaling triangle, and this triangle comprises the drift angle of angle between 50 degree to 140 degree.
11. semiconductor light-emitting elements as claimed in claim 10, is characterized in that, the angle of this drift angle is for equal or close to 70 degree.
12. semiconductor light-emitting elements as claimed in claim 1 or 2, it is characterized in that, the quantity of this optical texture is more than one, and those optical textures with array, be staggered or concentric arrangement arrange.
13. semiconductor light-emitting elements as claimed in claim 5, it is characterized in that, this connecting portion comprises lug boss.
14. semiconductor light-emitting elements as claimed in claim 13, is characterized in that, the radius of curvature of this lug boss is between 0.01 mm to 10 mm.
15. semiconductor light-emitting elements as claimed in claim 14, is characterized in that, this radius of curvature of this lug boss equals or close to 3 mm.
16. semiconductor light-emitting elements as claimed in claim 2, is characterized in that, this optical unit directly contact this wavelength conversion layer at least partially.
17. semiconductor light-emitting elements as claimed in claim 2, is characterized in that, this covering limit of this optical unit and the distance of this wavelength convert interlayer are between 0 mm to 2 mm.
18. semiconductor light-emitting elements as claimed in claim 17, is characterized in that, this covering limit of this optical unit and this distance of this wavelength convert interlayer equal or close to 0.2 mm.
19. semiconductor light-emitting elements as claimed in claim 4, it is characterized in that, the distance between this connecting portion of this optical unit and this transparent substrates is between 0 mm to 2 mm.
20. semiconductor light-emitting elements as claimed in claim 19, is characterized in that, this distance between this connecting portion of this optical unit and this transparent substrates equals or close to 0.2 mm.
21. semiconductor light-emitting elements as claimed in claim 1 or 2, is characterized in that, this optical unit directly contact this LED structure at least partially.
22. semiconductor light-emitting elements as claimed in claim 1 or 2, is characterized in that, the distance between this covering limit and this LED structure of this optical unit is between 0 mm to 2 mm.
23. semiconductor light-emitting elements as claimed in claim 1, it is characterized in that, this optical texture is for being similar to or equaling pyramid.
24. 1 kinds of semiconductor light-emitting elements, is characterized in that comprising:
Cube luminescence unit; And
Optical unit, is arranged at least one light-emitting area of this cube luminescence unit, and this optical unit comprises covering limit and light radiation side, and this covering limit is towards this cube luminescence unit, and the position of this light radiation side corresponds to this covering limit;
Wherein, this optical unit also comprises at least one optical texture, is arranged on this light radiation side, and this covering limit received light line is diffused to different directions according to the wavelength of light by this optical texture at least partially.
25. semiconductor light-emitting elements as claimed in claim 24, it is characterized in that, this cube luminescence unit comprises at least two relative light-emitting areas, this optical unit also comprises first and disperses portion and second and disperse portion, and this first disperses those light-emitting areas that portion and this second divergent portion do not cover this cube luminescence unit.
26. 1 kinds of light-emitting devices, is characterized in that comprising:
Semiconductor light-emitting elements as described in claim 1,2 or 24; And
Crystal component, is arranged on the position near this semiconductor light-emitting elements, and this crystal component is used for receiving the light that this semiconductor light-emitting elements sends.
27. light-emitting devices as claimed in claim 26, it is characterized in that, the distance between this semiconductor light-emitting elements and this crystal component is between 0 cm to 20 cm.
CN201510114780.7A 2014-03-18 2015-03-16 Semiconductor light-emitting elements and its light-emitting device Active CN104934521B (en)

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