CN104934510A - AlGaInP light emitting diode structure without top electrode blocking - Google Patents
AlGaInP light emitting diode structure without top electrode blocking Download PDFInfo
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- 230000000903 blocking effect Effects 0.000 title abstract description 3
- 239000002184 metal Substances 0.000 claims abstract description 119
- 229910052751 metal Inorganic materials 0.000 claims abstract description 119
- 239000004065 semiconductor Substances 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 91
- 238000001704 evaporation Methods 0.000 claims description 23
- 230000008020 evaporation Effects 0.000 claims description 23
- 238000004544 sputter deposition Methods 0.000 claims description 22
- 238000010276 construction Methods 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- 229910052804 chromium Inorganic materials 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052790 beryllium Inorganic materials 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 16
- 238000000605 extraction Methods 0.000 abstract description 10
- 238000002955 isolation Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 39
- 238000005229 chemical vapour deposition Methods 0.000 description 18
- 238000009413 insulation Methods 0.000 description 18
- 238000002360 preparation method Methods 0.000 description 15
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 239000007769 metal material Substances 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000006424 Flood reaction Methods 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
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- 230000031700 light absorption Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
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- 230000000737 periodic effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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Abstract
The present invention provides an AlGaInP light emitting diode structure without top electrode blocking. The AlGaInP light emitting diode structure comprises a substrate, a bonding layer, an n-ohmic contact metal layer, an isolation layer, a p-ohmic contact metal and reflection mirror layer with a current channel, a p-type semiconductor layer, an active light emitting region, an n-type semiconductor layer, an n-ohmic contact semiconductor layer and a window layer from bottom to top. A p electrode is prepared on the p-ohmic contact metal and reflection mirror layer with the current channel, and an n electrode is prepared on the n-ohmic contact metal layer. The p electrode is prepared on the p-ohmic contact metal and reflection mirror layer with the current channel, and the n electrode is prepared on the n-ohmic contact metal layer. According to the AlGaInP light emitting diode structure, the light extraction efficiency of an LED chip can be effectively improved, and the structure is easy to combine with existing process.
Description
Technical field
The present invention relates to a kind of AlGaInP light emitting diode construction blocked without top electrode, belong to light-emitting diode manufacturing technology field.
Background technology
The fifties in last century, under the effort of many well-known research institution that IBM Thomas J.Watson Research Center is representative, is that the Group III-V semiconductor of representative emerges rapidly in field of semiconductor illumination with GaAs.Afterwards along with the appearance of metal-organic chemical vapor deposition equipment (MOCVD) technology, make the growth of high-quality Group III-V semiconductor breach technology potential barrier, the semiconductor light emitting diode device of various wavelength floods the market in succession.Because semiconductor light-emitting-diode (LED) has the speciality such as theoretical efficiency is high, life-span length, mechanical impact relative to current luminescent device, be worldwide counted as illuminating device of new generation.
Through the development of decades, the internal quantum efficiency of LED component has reached higher level, and because Window layer electrode structure blocks and the total internal reflection effect limits of semiconductive thin film, light extraction efficiency becomes the principal element of restriction LED component luminous efficiency.Abundanter for the optimization means of total internal reflection effect at present, the technology such as graph substrate, surface coarsening is used widely aborning, but the occlusion issue of Window layer electrode structure is not yet paid attention to and solved.Green glow, gold-tinted, ruddiness and infrared AlGaInP base LED component is arranged at luminescence band, owing to adopting lighttight GaAs or Si substrate, device only realizes outgoing in the Window layer at chip top, and the electrode structure of Window layer blocks the light extraction efficiency that have impact on above device greatly.
This LED structure that PCT patent WO2010/009690DE2010.01.28 (102008034560.12008.07.24DE) provides a kind of " having radiation-emitting type semiconductor chip and the manufacture method thereof of electrostatic discharge (ESD) protection unit " Ostland Mu Aoputuo (OSRAMOpto) company to propose is also without top electrode structure, but it focuses on being integrated with in LED chip inside the electronic device function shielded, and object does not lie in the light extraction efficiency improving LED chip; And the configuration and techniques method described by patent cannot realize the application in AlGaInP base LED component due to factors such as semiconductor material system feature, ohmic contact restrictions.A kind of AlGaInP light emitting diode construction chip blocked without top electrode provided by the invention does not relate to the electronic device structure shielded, and all has remarkable difference in purpose of design, thinking, realization rate, application each side.
1993, first the people such as Schnitzer proposed to utilize the method for etching to carry out alligatoring thus the method for the external quantum efficiency of raising LED chip to semi-conducting material light output surface at Appl.Phys.Lett., obtain the light extraction efficiency of 50%.The principle that surface coarsening improves LED chip light ejection efficiency is the concaveconvex structure utilizing LED light output surface, is gone out by the light scattering of total reflection angle or is guided out chip, thus increases the light ratio that can shine LED outside.After this, Windisch reports similar method at periodicals such as IEEE Trans.Electron Dev. and Appl.Phys.Lett. and carries out alligatoring to LED light output surface.More than open research report adopts surface texture technology to improve the light extraction efficiency of LED component, does not relate to optimum ideals and solution that Window layer electrode structure blocks aspect.
Chinese patent CN101656284 provides a kind of method utilizing ITO particle mask alligatoring red light-emitting diode, the method comprises the following steps: (1) utilizes the method for the metal organic chemical vapor deposition contact layer of epitaxial growth N-type successively, multi-quantum well active region and P type contact layer on substrate routinely, and substrate is GaAs material; (2) on epitaxially grown P type contact layer, use the ito thin film of electron beam transpiration thick layer 260nm; (3) epitaxial wafer being coated with ITO is immersed 1min, etch away parts ITO in concentrated hydrochloric acid, that residual is granular ITO; (4) make mask, dry etching P type contact layer with residual ITO particle, form coarse surface; (5) residual ITO is eroded with concentrated hydrochloric acid.This patent of invention adopts surface texture technology to improve the light extraction efficiency of LED component, does not relate to optimum ideals and solution that Window layer electrode structure blocks aspect.
Chinese patent CN101656285 discloses the method utilizing PS spheres as template to make light-emitting diode coarse surface, and the method comprising the steps of: (1) is epitaxial growth epitaxial wafer routinely; (2) on epitaxially grown P type contact layer, lay one deck closely to be arranged the monofilm formed by PS ball; (3) with the chloride of tetraethyl orthosilicate, metal or nitrate for precursor, by the gap that is filled in after precursor, the mixing of second alcohol and water between the PS ball of monofilm and P type contact layer, room temperature leaves standstill and heat resolve is corresponding oxide; (4) epitaxial wafer is placed in carrene, dissolve with carrene and get rid of PS ball, the oxide formed in the gap between PS ball and P type contact layer is retained on P type contact layer by bowl-shape periodic arrangement structure; (5) make mask, dry etching P type contact layer with the oxide formed, form coarse surface; (6) residual oxide is eroded.This patent of invention adopts surface texture technology to improve the light extraction efficiency of LED component, does not relate to optimum ideals and solution that Window layer electrode structure blocks aspect.
Chinese patent CN201010271484 discloses a kind of method of removing LED chip electrode, is applicable to because having technical need or bad order to need again or the situation of repeatedly plated electrode.The object of this patent is removed by the electrode needed in top electrode chip, does not relate to the chip structure without top electrode.
In sum, above technology, patent all do not relate to the AlGaInP light emitting diode construction blocked without top electrode provided by the present invention, do and do not relate to bright dipping is blocked in the present invention object and design by structural design elimination top electrode.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of AlGaInP light emitting diode construction blocked without top electrode, object is to eliminate blocking of Window layer electrode structure, improves the light extraction efficiency of LED chip.
Terminological interpretation:
1, LED:Light Emitting Diode, light-emitting diode.
2, CVD:Chemical Vapor Deposition, chemical vapour deposition (CVD).
3, MOCVD:Metal-organic Chemical Vapor Deposition, metal-organic chemical vapor deposition equipment.
Technical scheme of the present invention is as follows:
A kind of AlGaInP light emitting diode construction blocked without top electrode as shown in Figure 1, by the structure at bottom to top be followed successively by substrate, bonded layer, n-ohmic contact metal layer, separator, with the p-metal ohmic contact of current channel and mirror layer, p-type semiconductor layer, active light emitting area, n-type semiconductor layer, N-shaped ohmic contact semiconductor layer, Window layer, p-electrode is prepared in on the p-metal ohmic contact of current channel and mirror layer, and n-electrode is prepared on n-ohmic contact metal layer.
Preferred according to the present invention, described substrate can select Si, GaAs, Al
2o
3, GaP, InP, SiC, Cu, Mo, Al material; Thickness is 20 μm-300 μm;
Preferred according to the present invention, described bonded layer can select the combination of the homogenous material in Au, In, Sn, Ti, Pt, Al, Cr material or multiple material, uses the mode of evaporation or sputtering to prepare; Thickness is 0.2 μm-10 μm;
Preferred according to the present invention, described n-ohmic contact metal layer can select the combination of the homogenous material of Au, Ge, Ni, Ti, Al, Ag, Cu, Cr, Be, Pd, Pt material or multiple material, uses the mode of evaporation or sputtering to prepare; Described n-ohmic contact metal layer to be covered on bonded layer and run through separator successively with the form of perforate, p-metal ohmic contact and mirror layer with current channel, p-type semiconductor layer, active light emitting area, n-type semiconductor layer directly contact with N-shaped ohmic contact semiconductor layer; The n-ohmic contact metal layer thickness be covered on bonded layer is 0.1 μm-5 μm, and the n-ohmic contact metal layer diameter of through part is 1 μm-25 μm;
Preferred according to the present invention, described separator can select SiO
2, Si
3n
4, TiO
2, Al
2o
3deng insulating material, CVD or sputtering or evaporation mode is used to prepare; Described separator to be covered on n-ohmic contact metal layer and to run through successively with the p-metal ohmic contact of current channel and mirror layer, p-type semiconductor layer, active light emitting area, n-type semiconductor layer with the form of perforate, and its end face does not directly contact with N-shaped ohmic contact semiconductor layer; The separation layer thickness be covered on n-ohmic contact metal layer is 0.1 μm-5 μm, the separator side of through part evenly wrap up n-metal ohmic contact side and with the aperture side even contact with the p-ohmic contact metal layer of current channel and mirror layer, p-type semiconductor layer, active light emitting area, n-type semiconductor layer, diameter is than large 0.1 μm-5 μm of the n-ohmic contact metal layer diameter of through part;
Preferred according to the present invention, the described p-metal ohmic contact with current channel and mirror layer are made up of transparent insulation separator and metal mirror layer, wherein transparent insulation separator has perforate, and the metal material of metal mirror layer is filled in opening area and contacts with p-type semiconductor layer; Transparent insulation separator can select SiO
2, Si
3n
4, TiO
2, Al
2o
3deng transparent insulation material, use CVD, sputtering or evaporation mode preparation, opening diameter is 1 μm-20 μm; Metal mirror layer can select the combination of the homogenous material in Au, Ag, Al, Ti, Ni, Sn, Be material or multiple material, and use the mode of evaporation or sputtering to prepare, thickness is 0.1 μm-5 μm;
Preferred according to the present invention, described p-type semiconductor layer can be p-GaP, p-AlInP, p-GaInP, p-GaAs, p-AlAs, p-AlGaAs, p-AlAsP, p-AlGaInP material prepared by MOCVD technology, and the concentration of p-type doping is 1 × 10
17cm
-3-1 × 10
21cm
-3, thickness is 0.1 μm-10 μm;
Preferred according to the present invention, described active light emitting area can be the Multiple Quantum Well prepared of MOCVD technology or multiheterostructure, can use the combination of the homogenous material of AlInP, GaInP, AlGaInP, GaAs, InGaAs, AlGaAs, AlAsP, GaAsP or multiple material;
Preferred according to the present invention, described n-type semiconductor layer can be n-GaP, n-AlInP, n-GaInP, n-GaAs, n-AlAs, n-AlGaAs, n-AlAsP, n-AlGaInP material prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
17cm
-3-1 × 10
21cm
-3, thickness is 0.1 μm-10 μm;
Preferred according to the present invention, described N-shaped ohmic contact semiconductor layer can be n-GaP, n-AlInP, n-GaInP, n-GaAs, n-AlAs, n-AlGaAs, n-AlAsP, n-AlGaInP material prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
17cm
-3-1 × 10
21cm
-3, thickness is 0.1 μm-10 μm;
Preferred according to the present invention, described Window layer can be n-GaP, n-AlInP, n-GaInP, n-GaAs, n-AlAs, n-AlGaAs, n-AlAsP, n-AlGaInP material prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
17cm
-3-1 × 10
21cm
-3, thickness is 0.1 μm-10 μm;
Preferred according to the present invention, described p-electrode is prepared in on the p-metal ohmic contact of current channel and mirror layer, the combination of the homogenous material of Au, Ge, Ni, Cr, Ti, Al, Ag, Cu, Be, Pd, Pt material or multiple material can be selected, use the mode of evaporation or sputtering to prepare; Thickness is 0.5 μm-10 μm;
Preferred according to the present invention, described n-electrode is prepared on n-ohmic contact metal layer, the combination of the homogenous material of Au, Ge, Ni, Ti, Cr, Al, Ag, Cu, Be, Pd, Pt material or multiple material can be selected, use the mode of evaporation or sputtering to prepare; Thickness is 0.5 μm-10 μm.
Excellent results of the present invention is as follows:
1. a kind of AlGaInP light emitting diode construction blocked without top electrode of the present invention, that can eliminate the n face electrode of AlGaInP base LED Window layer and ohmic contact interface blocks bright dipping and light absorption, significantly promotes light extraction efficiency.
2. a kind of AlGaInP light emitting diode construction blocked without top electrode of the present invention, does not introduce new process apparatus and method, is easy to mutually integrated with existing LED process route.
3. a kind of AlGaInP light emitting diode construction blocked without top electrode of the present invention, adopts coplanar electrode design, can meet the connection in series-parallel demand in integration packaging between LED chip.
Accompanying drawing explanation
Fig. 1 is the generalized section of a kind of AlGaInP light emitting diode construction blocked without top electrode of the present invention;
Fig. 2 is the schematic top plan view of a kind of AlGaInP light emitting diode construction blocked without top electrode of the present invention of the present invention.
In figure, 1, substrate, 2, bonded layer, 3, n-ohmic contact metal layer, 4, n-electrode, 5, separator, 6, with the p-metal ohmic contact of current channel and mirror layer, 7, p-electrode, 8, p-type semiconductor layer, 9, active light emitting area, 10, n-type semiconductor layer, 11, N-shaped ohmic contact semiconductor layer, 12, Window layer.
Embodiment
Below in conjunction with embodiment and Figure of description, the present invention is described in detail, but is not limited thereto.
Embodiment 1:
A kind of AlGaInP light emitting diode construction blocked without top electrode, as shown in Figure 1, by the structure at bottom to top be followed successively by substrate 1, bonded layer 2, n-ohmic contact metal layer 3, separator 5, with the p-metal ohmic contact of current channel and mirror layer 6, p-type semiconductor layer 8, active light emitting area 9, n-type semiconductor layer 10, N-shaped ohmic contact semiconductor layer 11, Window layer 12, p-electrode 7 is prepared in on the p-metal ohmic contact of current channel and mirror layer 6, and n-electrode 4 is prepared on n-ohmic contact metal layer 3.
Described substrate 1 selects Si material, and thickness is 100 μm;
Described bonded layer 2 selects Au, and use evaporation mode preparation, thickness is 1 μm;
Described n-ohmic contact metal layer 3 selects the combination of Au, Ge, Ni material, uses evaporation mode preparation; Described n-ohmic contact metal layer to be covered on bonded layer and run through separator successively with the form of perforate, p-metal ohmic contact and mirror layer with current channel, p-type semiconductor layer, active light emitting area, n-type semiconductor layer directly contact with N-shaped ohmic contact semiconductor layer; The n-ohmic contact metal layer thickness be covered on bonded layer is 0.5 μm, and the n-ohmic contact metal layer diameter of through part is 15 μm;
Described separator 5 selects SiO
2material, uses CVD mode to prepare; Described separator 5 to be covered on n-ohmic contact metal layer 3 and to run through successively with the p-metal ohmic contact of current channel and mirror layer 6, p-type semiconductor layer 8, active light emitting area 9, n-type semiconductor layer 10 with the form of perforate, and its end face does not directly contact with N-shaped ohmic contact semiconductor layer 11; Separator 5 thickness be covered on n-ohmic contact metal layer 3 is 0.5 μm, separator 5 side of through part evenly wrap up n-ohmic contact metal layer 3 side and with the aperture side even contact with the p-metal ohmic contact of current channel and mirror layer 6, p-type semiconductor layer 8, active light emitting area 9, n-type semiconductor layer 10, diameter is than large 0.5 μm of n-ohmic contact metal layer 3 diameter of through part;
The described p-metal ohmic contact with current channel and mirror layer 6 are made up of transparent insulation separator and metal mirror layer, wherein transparent insulation separator has perforate, and the metal material of metal mirror layer is filled in opening area and contacts with p-type semiconductor layer 8; Transparent insulation separator selects SiO
2material, use CVD mode to prepare, opening diameter is 10 μ n; Metal mirror layer selects the combination of Au, Be material, and use evaporation mode preparation, thickness is 0.5 μm;
Described p-type semiconductor layer 8 is p-GaP materials prepared by MOCVD technology, and the concentration of p-type doping is 1 × 10
20cm
-3, thickness is 5 μm;
Described active light emitting area 9 is multi-quantum pit structures prepared by MOCVD technology, uses the combination of GaInP, AlGaInP material;
Described n-type semiconductor layer 10 is n-AlInP materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
20cm
-3, thickness is 2 μm;
Described N-shaped ohmic contact semiconductor layer 11 is n-GaP materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
20cm
-3, thickness is 2 μm;
Described Window layer 12 is n-AlGaInP materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
20cm
-3, thickness is 2.5 μm;
Described p-electrode 7 is prepared in on the p-metal ohmic contact of current channel and mirror layer 6, selects the combination of Ti, Al material, uses evaporation mode preparation; Thickness is 2 μm;
Described n-electrode 4 is prepared on n-ohmic contact metal layer 3, selects the combination of Ti, Al material, uses evaporation mode preparation; Thickness is 2.5 μm.
Embodiment 2:
A kind of AlGaInP light emitting diode construction blocked without top electrode as described in Example 1, its difference is,
Described substrate 1 selects Cu material; Thickness is 150 μm;
Described bonded layer 2 selects In and Au combination of materials, uses evaporation mode preparation; Thickness is 2 μm;
Described n-ohmic contact metal layer 3 selects the combination of Au, Ti material, uses evaporation mode preparation; N-ohmic contact metal layer 3 thickness be covered on bonded layer 2 is 0.2 μm, and n-ohmic contact metal layer 3 diameter of through part is 20 μm;
Described separator 5 selects Si
3n
4material, uses CVD mode to prepare; Separator 5 thickness be covered on n-ohmic contact metal layer 3 is 0.3 μm, the separator side of through part evenly wrap up n-ohmic contact metal layer 3 side and with the aperture side even contact with the p-metal ohmic contact of current channel and mirror layer 6, p-type semiconductor layer 8, active light emitting area 9, n-type semiconductor layer 10, diameter is than large 0.3 μm of n-ohmic contact metal layer 3 diameter of through part;
The described p-metal ohmic contact with current channel and mirror layer 6 are made up of transparent insulation separator and metal mirror layer, wherein transparent insulation separator has perforate, and the metal material of metal mirror layer is filled in opening area and contacts with p-type semiconductor layer; Transparent insulation separator selects TiO
2material, use CVD mode to prepare, opening diameter is 15 μm; Metal mirror layer selects the combination of Au, Be material, and use evaporation mode preparation, thickness is 1 μm;
Described p-type semiconductor layer 8 is p-AlGaInP materials prepared by MOCVD technology, and the concentration of p-type doping is 1 × 10
21cm
-3, thickness is 8 μm;
Described active light emitting area 9 is multi-quantum pit structures prepared by MOCVD technology, uses the combination of AlInP, AlGaInP material;
Described n-type semiconductor layer 10 is n-AlGaInP materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
21cm
-3, thickness is 3 μm;
Described N-shaped ohmic contact semiconductor layer 11 is n-GaInP materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
21cm
-3, thickness is 1 μm;
Described Window layer 12 is n-AlInP materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
21cm
-3, thickness is 3 μm;
Described p-electrode 7 is prepared in on the p-metal ohmic contact of current channel and mirror layer 6, selects the combination of Cr, Ti, Al material, uses sputtering mode to prepare; Thickness is 3 μm;
Described n-electrode 4 is prepared on n-ohmic contact metal layer 3, selects the combination of Cr, Ti, Al material, uses the mode of sputtering to prepare; Thickness is 3 μm.
Embodiment 3:
A kind of AlGaInP light emitting diode construction blocked without top electrode as described in Example 1, its difference is,
Described substrate 1 selects Mo material; Thickness is 250 μm;
Described bonded layer 2 selects Sn, Al, Pt, Ti combination of materials, uses sputtering mode to prepare; Thickness is 5
μm;
Described n-ohmic contact metal layer 3 selects the combination of Ni, Al, Ti material, uses sputtering mode to prepare; N-ohmic contact metal layer 3 thickness be covered on bonded layer 2 is 1 μm, and n-ohmic contact metal layer 3 diameter of through part is 25 μm;
Described separator 5 selects Al
2o
3material, uses sputtering mode to prepare; Separator 5 thickness be covered on n-ohmic contact metal layer 3 is 1 μm, separator 5 side of through part evenly wrap up n-ohmic contact metal layer 3 side and with the aperture side even contact with the p-metal ohmic contact of current channel and mirror layer 6, p-type semiconductor layer 8, active light emitting area 9, n-type semiconductor layer 10, diameter is than large 1 μm of n-ohmic contact metal layer 3 diameter of through part;
The described p-metal ohmic contact with current channel and mirror layer 6 are made up of transparent insulation separator and metal mirror layer, wherein transparent insulation separator has perforate, and the metal material of metal mirror layer is filled in opening area and contacts with p-type semiconductor layer; Transparent insulation separator selects Al
2o
3material, use sputtering mode to prepare, opening diameter is 20 μm; Metal mirror layer selects the combination of Ag, Ni material, and use sputtering mode to prepare, thickness is 5 μm;
Described μ type semiconductor layer 8 is p-AlGaAs materials prepared by MOCVD technology, and the concentration of p-type doping is 1 × 10
17cm
-3, thickness is 10 μm;
Described active light emitting area 9 is multi-quantum pit structures prepared by MOCVD technology, uses the combination of AlGaAs, AlAs material;
Described n-type semiconductor layer 10 is n-AlGaAs materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
17cm
-3, thickness is 10 μm;
Described N-shaped ohmic contact semiconductor layer 11 is n-AlGaAs materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
17cm
-3, thickness is 10 μm;
Described Window layer 12 is n-AlGaAs materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
17cm
-3, thickness is 10 μm;
Described p-electrode 7 is prepared in on the p-metal ohmic contact of current channel and mirror layer 6, selects Al material, uses sputtering mode to prepare; Thickness is 10 μm;
Described n-electrode 4 is prepared on n-ohmic contact metal layer 3, uses Al material, uses the mode of sputtering to prepare; Thickness is 10 μm.
Embodiment 4:
A kind of AlGaInP light emitting diode construction blocked without top electrode as described in Example 1, its difference is,
Described substrate 1 selects Al
2o
3material; Thickness is 180 μm;
Described bonded layer 2 selects Au and Sn combination of materials, uses evaporation mode preparation; Thickness is 3 μm;
Described n-ohmic contact metal layer 3 selects the combination of Cu, Pt, Cr material, uses evaporation mode preparation; N-ohmic contact metal layer 3 thickness be covered on bonded layer 2 is 0.8 μm, and n-ohmic contact metal layer 3 diameter of through part is 1 μm;
Described separator 5 selects Si
3n
4material, uses CVD mode to prepare; Separator 5 thickness be covered on n-ohmic contact metal layer 3 is 5 μm, separator 5 side of through part evenly wrap up n-ohmic contact metal layer 3 side and with the aperture side even contact with the p-metal ohmic contact of current channel and mirror layer 6, p-type semiconductor layer 8, active light emitting area 9, n-type semiconductor layer 10, diameter is than large 5 μm of n-ohmic contact metal layer 3 diameter of through part;
The described p-metal ohmic contact with current channel and mirror layer are made up of transparent insulation separator and metal mirror layer, and wherein transparent insulation separator has perforate, and the metal material of metal mirror layer is filled in opening area and contacts with p-type semiconductor layer; Transparent insulation separator selects Si
3n
4material, use CVD mode to prepare, opening diameter is 12 μm; Metal mirror layer selects the combination of Ni, Ti, Al material, and use evaporation mode preparation, thickness is 0.8 μm;
Described p-type semiconductor layer 8 is p-GaInP materials prepared by MOCVD technology, and the concentration of p-type doping is 1 × 10
19cm
-3, thickness is 2 μm;
Described active light emitting area 9 is multi-quantum pit structures prepared by MOCVD technology, uses the combination of GaInP, AlGaInP material;
Described n-type semiconductor layer 10 is n-GaInP materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
19cm
-3, thickness is 2 μm;
Described N-shaped ohmic contact semiconductor layer 11 is n-GaInP materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
19cm
-3, thickness is 2 μm;
Described Window layer 12 is n-GaInP materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
19cm
-3, thickness is 2 μm;
Described p-electrode 7 is prepared in on the p-metal ohmic contact of current channel and mirror layer 6, selects the combination of Cr, Ti, Au material, uses sputtering mode to prepare; Thickness is 4 μm;
Described n-electrode 4 is prepared on n-ohmic contact metal layer 3, selects the combination of Cr, Ti, Au material, uses the mode of sputtering to prepare; Thickness is 4 μm.
Embodiment 5:
A kind of AlGaInP light emitting diode construction blocked without top electrode as described in Example 1, its difference is,
Described substrate 1 selects SiC material; Thickness is 150 μm;
Described bonded layer 2 selects In material, uses evaporation mode preparation; Thickness is 2.5 μm;
Described n-ohmic contact metal layer 3 selects the combination of Ni, Ge, Al, Ti material, uses evaporation mode preparation; N-ohmic contact metal layer 3 thickness be covered on bonded layer 2 is 0.6 μm, and n-ohmic contact metal layer 3 diameter of through part is 25 μm;
Described separator 5 selects SiO
2material, uses CVD mode to prepare; Separator 5 thickness be covered on n-ohmic contact metal layer 3 is 0.6 μm, separator 5 side of through part evenly wrap up n-ohmic contact metal layer 3 side and with the aperture side even contact with the p-metal ohmic contact of current channel and mirror layer 6, p-type semiconductor layer 8, active light emitting area 9, n-type semiconductor layer 10, diameter is than large 0.6 μm of n-ohmic contact metal layer 3 diameter of through part;
The described p-metal ohmic contact with current channel and mirror layer 6 are made up of transparent insulation separator and metal mirror layer, wherein transparent insulation separator has perforate, and the metal material of metal mirror layer is filled in opening area and contacts with p-type semiconductor layer; Transparent insulation separator selects SiO
2material, use CVD mode to prepare, opening diameter is 5 μm; Metal mirror layer selects the combination of Au, Be material, and use evaporation mode preparation, thickness is 0.3 μm;
Described p-type semiconductor layer 8 is p-GaP materials prepared by MOCVD technology, and the concentration of p-type doping is 1 × 10
21cm
-3, thickness is 3 μm;
Described active light emitting area 9 is multi-quantum pit structures prepared by MOCVD technology, uses AlGaInP material;
Described n-type semiconductor layer 10 is n-AlInP materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
19cm
-3, thickness is 2.5 μm;
Described N-shaped ohmic contact semiconductor layer 11 is n-GaP materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
21cm
-3, thickness is 3 μm;
Described Window layer 12 is n-AlGaInP materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
19cm
-3, thickness is 4 μm;
Described p-electrode 7 is prepared in on the p-metal ohmic contact of current channel and mirror layer 6, selects the combination of Cr, Ti, Al material, uses sputtering mode to prepare; Thickness is 2.6 μm;
Described n-electrode 4 is prepared on n-ohmic contact metal layer 3, selects the combination of Cr, Ti, Al material, uses the mode of sputtering to prepare; Thickness is 2.6 μm.
Claims (3)
1. the AlGaInP light emitting diode construction blocked without top electrode, it is characterized in that, its by the structure at bottom to top be followed successively by substrate, bonded layer, n-ohmic contact metal layer, separator, with the p-metal ohmic contact of current channel and mirror layer, p-type semiconductor layer, active light emitting area, n-type semiconductor layer, N-shaped ohmic contact semiconductor layer, Window layer, p-electrode is prepared in on the p-metal ohmic contact of current channel and mirror layer, and n-electrode is prepared on n-ohmic contact metal layer.
2. a kind of AlGaInP light emitting diode construction blocked without top electrode according to claim 1, it is characterized in that, described n-ohmic contact metal layer can select the combination of the homogenous material of Au, Ge, Ni, Ti, Al, Ag, Cu, Cr, Be, Pd, Pt material or multiple material, uses the mode of evaporation or sputtering to prepare; Described n-ohmic contact metal layer to be covered on bonded layer and run through separator successively with the form of perforate, p-metal ohmic contact and mirror layer with current channel, p-type semiconductor layer, active light emitting area, n-type semiconductor layer directly contact with N-shaped ohmic contact semiconductor layer; The n-ohmic contact metal layer thickness be covered on bonded layer is 0.1 μm-5 μm, and the n-ohmic contact metal layer diameter of through part is 1 μm-25 μm.
3. a kind of AlGaInP light emitting diode construction blocked without top electrode according to claim 1, it is characterized in that, described separator can select SiO
2, Si
3n
4, TiO
2, Al
2o
3deng insulating material, CVD or sputtering or evaporation mode is used to prepare; Described separator to be covered on n-ohmic contact metal layer and to run through successively with the p-metal ohmic contact of current channel and mirror layer, p-type semiconductor layer, active light emitting area, n-type semiconductor layer with the form of perforate, and its end face does not directly contact with N-shaped ohmic contact semiconductor layer; The separation layer thickness be covered on n-ohmic contact metal layer is 0.1 μm-5 μm, the separator side of through part evenly wrap up n-metal ohmic contact side and with the aperture side even contact with the p-ohmic contact metal layer of current channel and mirror layer, p-type semiconductor layer, active light emitting area, n-type semiconductor layer, diameter is than large 0.1 μm-5 μm of the n-ohmic contact metal layer diameter of through part.
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| WO2020191590A1 (en) * | 2019-03-25 | 2020-10-01 | 泉州三安半导体科技有限公司 | Semiconductor light-emitting element |
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Effective date of registration: 20151217 Address after: 261061 Weifang high tech Zone, Jin Road, No. 9, No. Applicant after: Shandong Inspur Huaguang Optoelectronics Co., Ltd. Address before: Tianchen Avenue high tech Zone of Ji'nan City, Shandong Province, No. 1835 250101 Applicant before: Shandong Huaguang Photoelectronic Co., Ltd. |
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Application publication date: 20150923 |