CN104934120A - Low resistance high expansion semi-conductive single-sided waterproof manufacture method - Google Patents
Low resistance high expansion semi-conductive single-sided waterproof manufacture method Download PDFInfo
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- CN104934120A CN104934120A CN201510311945.XA CN201510311945A CN104934120A CN 104934120 A CN104934120 A CN 104934120A CN 201510311945 A CN201510311945 A CN 201510311945A CN 104934120 A CN104934120 A CN 104934120A
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- semiconductive
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Abstract
The invention discloses a low resistance high expansion semi-conductive single-sided waterproof belt manufacture method, relating to the manufacture method of the waterproof belt. The low resistance high expansion semi-conductive single-sided waterproof belt consists of a base material layer, a semi-conductive material layer and a semi-conductive water absorption material layer. The low resistance high expansion semi-conductive single-sided waterproof belt manufacture method comprises steps of manufacturing a base material, applying a semi-conductive glue and semi-conductive resistance water powder onto the base material, drying, slitting and packaging. The product manufactured by the method is fast in the expansion speed, good in electric performance, simple in the production technology, stable in the technology performance and strong in practicability. The invention is applicable to the cable, improves watertight property of the insulation layer, the inner shielding layer and the outer shielding layer and is good in resisting water.
Description
Technical field
The present invention relates to a kind of cable waterstop manufacture method, particularly relate to a kind of low resistance height expansion semiconductive one side waterstop manufacture method.
Background technology
During cable runs, due to the function of current that cable core is powerful, the convex thorn of the impurity in insulating barrier, pore and interior outer shielding layer and damaged location all can due to the infiltration generation water tree phenomenons of water, make insulating barrier inside produce electric discharge and even puncture cable, this just needs a kind of semiconductive material with water stop function to cushion electric field.
For solving the problem, usually adopt semiconductor waterstop at present.Although serve the effect of semi-conductive screen buffering electric field, owing to there being cover layer, greatly delayed expansion process, block-water effect is undesirable.And adopting the general volume resistance of one side semiconductor waterstop comparatively large, surface easily Accumulating charge, produces electric discharge phenomena and brings hidden danger.
Summary of the invention
The object of the present invention is to provide a kind of low resistance height expansion semiconductive one side waterstop manufacture method, waterstop product current collection field buffer, mechanical damping and water stop function prepared by the present invention are in one, improve the speed of expansion of product, make block-water effect more reliable, reduce sheet resistance and volume resistance simultaneously, electrical property is strengthened.
The present invention is achieved by the following technical solutions:
The manufacture method of low resistance height expansion semiconductive one side waterstop, described method comprises following process steps:
(1) making of base material, makes satisfactory base material by the specification requirement of product;
(2) semi-conductive adhesive is executed; Semiconductive glue imposes in the one side of base material to be processed, linear speed 10-30 rice/min;
(3) semiconductive water-proofing powder is executed; Semiconductive water-proofing powder is made by oneself, successively adds NaOH, acrylic acid generates acrylates through neutralization reaction in there-necked flask; Add the conductive paste be made up of dispersant nonylphenol polyoxyethylene ether sulfate, sorbitan fatty acid ester S-40 and conductive agent furnace black; Add crosslinking agent polyethyleneglycol diacrylate, N, N-methylene-bisacrylamide, logical nitrogen 30min, displaces inside reactor oxygen, then obtains hydrogel after adding initator sodium peroxydisulfate, sodium hydrogensulfite static polymerization; Drying, pulverizing, sieve to obtain semiconductive high resistant pigment.Above-mentioned semiconductive water-proofing powder imposes in the one side of the product of above-mentioned steps (2) gained, linear speed 10-30 rice/min.
(4) dry; By obtained by above-mentioned steps (3) product dry at 120-200 DEG C, arrange to obtain low resistance height expansion semiconductive one side waterstop.
Waterstop semiconducting material prepared by the present invention is attached on a surface of substrate layer, be combined with substrate layer by bonding, coating, impregnating mode, semiconductive absorbent material layer be attached to semiconducting material another on the surface, semiconductive absorbent material layer is combined with semiconducting material by bonding, coating, impregnating mode.
Advantage of the present invention and effect are:
Product speed of expansion of the present invention is fast, and block-water effect is reliable, reduces sheet resistance and the volume resistance of product, improves electrical property, and play the effect of shielding and buffering electric field, and production technology is simple, technical performance is stablized, practical.
Embodiment
Embodiment 1
(1) making of base material: adhesive fabric, substance: 40g/m
2, thickness 0.16mm;
(2) semi-conductive adhesive is executed; Be coated in the one side of the adhesive fabric of step 1 by complex method, linear speed 15 meters/min;
(3) semiconductive water-proofing powder is executed; In there-necked flask, successively add 3.2Kg NaOH, 7.2Kg acrylic acid generate acrylates through part neutralization reaction; Add the conductive paste be made up of dispersant nonylphenol polyoxyethylene ether sulfate 0.4kg, 0.4kg sorbitan fatty acid ester S-40 and 4Kg conductive agent furnace black; Add crosslinking agent polyethyleneglycol diacrylate 0.005kg, N, N-methylene-bisacrylamide 0.005kg, logical nitrogen 30min, displaces inside reactor oxygen; Hydrogel is obtained after adding initator sodium peroxydisulfate 0.15kg, sodium hydrogensulfite 0.05kg static polymerization again; Drying, pulverizing, sieve to obtain semiconductive high resistant pigment.Above-mentioned semiconductive water-proofing powder imposes in the one side of the product of above-mentioned steps (2) gained, linear speed 15 meters/min.
(4) by step 3 product material dry at 150 DEG C, arrange to obtain low resistance height expansion semiconductive one side waterstop.
Properties of product test result is as follows:
Substance: 120g/m
2thickness: 0.30mm
Tensile strength: 45N/cm elongation: 16%
Sheet resistance: 420 Ω volume resistance: 2.4*10
4Ω .cm
Speed of expansion: 12mm/1stmin expansion height: 20mm/3min.
Claims (1)
1. the manufacture method of low resistance height expansion semiconductive one side waterstop: it is characterized in that, described method comprises following process steps:
(1) making of base material, makes satisfactory base material by the specification requirement of product;
(2) semi-conductive adhesive is executed; Semiconductive glue imposes in the one side of base material to be processed, linear speed 10-30 rice/min;
(3) semiconductive water-proofing powder is executed; Semiconductive water-proofing powder is made by oneself, successively adds NaOH, acrylic acid generates acrylates through neutralization reaction in there-necked flask; Add the conductive paste be made up of dispersant nonylphenol polyoxyethylene ether sulfate, Sorbitan village fatty acid ester S-40 and conductive agent furnace black; Add crosslinking agent polyethyleneglycol diacrylate, N, N-methylene-bisacrylamide, logical nitrogen 30min, displaces inside reactor oxygen, then obtains hydrogel after adding initator sodium peroxydisulfate, sodium hydrogensulfite static polymerization; Drying, pulverizing, sieve to obtain semiconductive high resistant pigment; Gained semiconductive water-proofing powder imposes in the one side of the obtained product of above-mentioned steps (2), linear speed 10-30 rice/min;
(4) dry; Obtained for above-mentioned steps (3) product is dried at 120-200 DEG C, arranges to obtain low resistance height expansion semiconductive one side waterstop.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510311945.XA CN104934120A (en) | 2015-06-09 | 2015-06-09 | Low resistance high expansion semi-conductive single-sided waterproof manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510311945.XA CN104934120A (en) | 2015-06-09 | 2015-06-09 | Low resistance high expansion semi-conductive single-sided waterproof manufacture method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104934120A true CN104934120A (en) | 2015-09-23 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510311945.XA Pending CN104934120A (en) | 2015-06-09 | 2015-06-09 | Low resistance high expansion semi-conductive single-sided waterproof manufacture method |
Country Status (1)
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| CN (1) | CN104934120A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108878038A (en) * | 2018-06-21 | 2018-11-23 | 无锡腾华电缆材料科技有限公司 | Single-sided insulation waterstop production technology |
| CN109300596A (en) * | 2018-09-19 | 2019-02-01 | 沈阳东铄电材有限公司 | A kind of semiconductive metal shielding waterstop and preparation method thereof |
| CN111347739A (en) * | 2020-03-11 | 2020-06-30 | 沈阳天荣电缆材料有限公司 | Seawater-resistant anti-corrosion semiconductive water-blocking tape and preparation method thereof |
Citations (4)
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| CN2452095Y (en) * | 2000-11-24 | 2001-10-03 | 沈阳天荣电缆材料有限公司 | Water resistant yarn for electric cable & optical cable |
| CN101567236A (en) * | 2008-04-25 | 2009-10-28 | 扬州腾飞电缆电器材料有限公司 | Production method of semi-conductive buffer water-blocking band |
| CN102013286A (en) * | 2010-09-16 | 2011-04-13 | 沈阳天荣电缆材料有限公司 | Semi-conductive buffer watertight lashing band and production method thereof |
| CN102079800A (en) * | 2010-12-24 | 2011-06-01 | 沈阳天荣电缆材料有限公司 | Preparation method of semiconductive high-water-absorptivity resin |
-
2015
- 2015-06-09 CN CN201510311945.XA patent/CN104934120A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2452095Y (en) * | 2000-11-24 | 2001-10-03 | 沈阳天荣电缆材料有限公司 | Water resistant yarn for electric cable & optical cable |
| CN101567236A (en) * | 2008-04-25 | 2009-10-28 | 扬州腾飞电缆电器材料有限公司 | Production method of semi-conductive buffer water-blocking band |
| CN102013286A (en) * | 2010-09-16 | 2011-04-13 | 沈阳天荣电缆材料有限公司 | Semi-conductive buffer watertight lashing band and production method thereof |
| CN102079800A (en) * | 2010-12-24 | 2011-06-01 | 沈阳天荣电缆材料有限公司 | Preparation method of semiconductive high-water-absorptivity resin |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108878038A (en) * | 2018-06-21 | 2018-11-23 | 无锡腾华电缆材料科技有限公司 | Single-sided insulation waterstop production technology |
| CN108878038B (en) * | 2018-06-21 | 2020-03-27 | 无锡腾华电缆材料科技有限公司 | Production process of single-sided insulating water-blocking tape |
| CN109300596A (en) * | 2018-09-19 | 2019-02-01 | 沈阳东铄电材有限公司 | A kind of semiconductive metal shielding waterstop and preparation method thereof |
| CN109300596B (en) * | 2018-09-19 | 2020-06-30 | 沈阳东铄电材有限公司 | Semiconductive metal shielding water-blocking tape and preparation method thereof |
| CN111347739A (en) * | 2020-03-11 | 2020-06-30 | 沈阳天荣电缆材料有限公司 | Seawater-resistant anti-corrosion semiconductive water-blocking tape and preparation method thereof |
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| RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20150923 |