CN104916604B - MEMS heat-driven oscillation self adaptations heat dissipating method, driver and processing method - Google Patents
MEMS heat-driven oscillation self adaptations heat dissipating method, driver and processing method Download PDFInfo
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- CN104916604B CN104916604B CN201510238390.0A CN201510238390A CN104916604B CN 104916604 B CN104916604 B CN 104916604B CN 201510238390 A CN201510238390 A CN 201510238390A CN 104916604 B CN104916604 B CN 104916604B
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- 230000006978 adaptation Effects 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 23
- 230000010355 oscillation Effects 0.000 title claims abstract description 20
- 238000003672 processing method Methods 0.000 title claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 238000010276 construction Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 6
- 230000002194 synthesizing effect Effects 0.000 claims description 6
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 239000005357 flat glass Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 abstract description 7
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 7
- 238000005265 energy consumption Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001869 rapid Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses a kind of MEMS heat-driven oscillations self adaptation heat dissipating method, driver and processing method, the heat dissipating method is vibrated using the beam of thermal drivers MEMS drivers, vibration of beam changes the flow behavior of heating surface, expands thermograde, so as to realize radiating.The advantage of this heat dissipating method is not need external drive, it is not required that external control switch, but is driven using the used heat of thermal source, and carry out self adaptation radiating, simple structure, mechanism is clear, can provide a new approach for the cabinet of supercomputer and chip cooling.
Description
Technical field
The present invention relates to a kind of MEMS heat-driven oscillations self adaptation heat dissipating method, driver and processing method, can extensive utilization
In large-scale cabinet and the field of radiating of chip.
Background technology
The sustained and rapid development of supercomputer brings revolutionary development to many great national projects, and then has influence on
Our national economy, but the sharp increase of energy consumption is also brought simultaneously, and increasing deal is occupied in national energy consumption.
Between 2005 to 2010, whole world consumption of data center increased 56%, and 2010 annual data power consumptions reach 237TWh, account for
The 1.3% of total electricity consumption then.Wherein cooling system proportion in whole consumption of data center is up to 20-50%.In state
Interior, " Milky Way two " supercomputer that the National University of Defense technology develops is led as world today's arithmetic speed most fast, complex art
First supercomputer.But " Milky Way two " has also paid the cost of huge energy consumption, 17.8 megawatts of whole acc power is carrying water wind
After combination cooling hot systems, power is up to 24 megawatts, energy consumption ratio about 25% shared by cooling system.It is reported that, " Milky Way two "
One be only the electricity charge will 100,000,000 yuans, if full speed computing, the electricity charge are more up to 1.5 hundred million.According to 100,000,000 yuan of calculating of total electricity bill,
Annual flower expense on the cooling system is 25,000,000 yuan.Therefore the radiating cost for how reducing data center server has non-
The economic benefit of Chang Keguan.
Meanwhile, good heat dissipation design is also to improve the critical path of chip reliability.Too high temperature can reduce chip
The stability of work, increases error rate, while the thermal stress that inside modules and the external environment condition residing for module are formed can be direct
Have influence on performance, working frequency, mechanical strength and the reliability of chip.
The synthesizing jet-flow excitor of macroscopic view in the remarkable effect of aerospace field due to receiving the wide of domestic and foreign scholars
General concern, and carried out a large amount of fruitful research work, but the research in terms of mainframe computer cabinet and chip cooling
It is then little.Because chip volume is small, application of macroscopical driver in radiating is limited to a certain extent.
The content of the invention
In order to overcome the shortcomings of existing macroscopical synthesizing jet-flow excitor technology in chip cooling field, the present invention provides MEMS
Heat-driven oscillation self adaptation heat dissipating method, driver and processing method.
A kind of MEMS heat-driven oscillations self adaptation heat dissipating method, using heat-driven oscillation radiating, synthesizing jet-flow radiating, heat loss through radiation
It is combined, a plurality of beam of the heat drive MEMS drivers produced using thermal source is vibrated, and vibration of beam changes thermal source and passes
The flow behavior of hot surface, expands thermograde, so as to realize that self adaptation radiates, using girder construction and the perforate on beam, increases
Area of dissipation carries out heat loss through radiation.
Described method, it is not necessary to which external circuit carries out switch control.
Described method, it is not necessary to which extra power is controlled.
A kind of MEMS heat-driven oscillations self adaptation radiating driver of the method using according to.
Described MEMS heat-driven oscillations self adaptation radiating driver, directly attachment can be realized on the thermal source for needing radiating
Self adaptation radiates.
A kind of processing method of the MEMS heat-driven oscillations self adaptation radiating driver described in basis, step is as follows：
1）Prepare silicon substrate；
2）Dry-oxygen oxidation is carried out, front and back forms silica；
3）Silica to the back side carries out gluing protection, and front photoetching is removed silica, carved using wet method on silicon
Erosion processes the hole on gap and beam between beam；
4）The back side carries out photoetching, removes silica；
5）The silicon at the back side is discharged using plasma dry etch, girder construction is formed；
6）Sheet glass is bonded in silicon chip back side.
Cabinet or chip that a kind of carrying out using described MEMS heat-driven oscillations self adaptation radiating driver is radiated.
The beneficial effects of the present invention are：First, the self adaptation for realizing driver using thermal drivers beam works, it is not necessary to outward
Portion loop carries out switch control；Second, using the heat drive MEMS drivers of thermal source generation so as to realize radiating, it is not necessary to outward
Portion's energy；3rd, three kinds of radiating mode knots of heat loss through radiation are increased using perforate on vibrating enhanced radiating, synthesizing jet-flow radiating, beam
The method of conjunction, radiating effect is good；4th, MEMS exciter structure are small, light weight, can be big for small volume, power, i.e. power
The big chip of density realizes radiating；5th, this MEMS drivers are directly mounted on the thermal source for needing radiating and is capable of achieving certainly
Radiating is adapted to, is installed simple and convenient.
Brief description of the drawings
Fig. 1 is MEMS heat-driven oscillations self adaptation radiating driver processing process figure.
Specific embodiment
MEMS have small volume, light weight, it is low in energy consumption the features such as, bring as follows to the driver based on MEMS technology
Advantage：（1）Can batch machining obtain the consistent driver of performance, high spatial resolution, the Gao Ling of flow control technique can be met
Sensitivity, high frequency sound demand；（2）Be easily achieved the system integration of sensor, circuit and actuator, improve system reliability and
Stability；（3）The array of driver is easily achieved, the collaborative work of multiple drivers is realized, single driver energy is overcome
Deficiency not high.Therefore, the synthesizing jet-flow technology based on MEMS technology will give the heat-radiation belt of mainframe computer cabinet and chip
Carry out considerable prospect.
The present invention is further illustrated with reference to the accompanying drawings and examples.
As shown in figure 1, a kind of MEMS drivers radiator structure based on thermal drivers makees structural material, dioxy using silicon thin film
The method processing agent structure that the wet etching and plasma dry etch that SiClx film makees sacrificial layer material are combined, utilizes
The method of titanium dioxide silicon on glass bonding completes the processing of device.
Concrete technology flow process is as shown in Figure 1.On a silicon substrate（Shown in Fig. 1 (a)）Carry out dry-oxygen oxidation, front and back shape
Into silica, shown in such as Fig. 1 (b)（Diagram silicon chip top is designated as front, and silicon chip lower section is designated as the back side）.To the titanium dioxide at the back side
Silicon carries out gluing protection, and front photoetching removes silica.Gap and beam between using wet etching processing beam on silicon
On hole, shown in its top view such as Fig. 1 (c).Removal front silica, shown in such as Fig. 1 (d).The back side carries out photoetching, removal two
Shown in silica, such as Fig. 1 (e).The silicon at the back side is discharged using plasma dry etch, girder construction is formed, shown in such as Fig. 1 (f),
Fig. 1 (g) is top view.Sheet glass is bonded in silicon chip back side, shown in such as Fig. 1 (h).
As shown in Fig. 1 (g), 3 beams are processed on driver（The number of beam can be adjusted as needed）, under thermal drivers,
Beam vibrates.Due to structure and the difference of position, each bar vibration of beam will not keep synchronous, and this is increased by showing the rapids in flow field
Mobility, expands thermograde, advantageously in radiating.
As shown in Fig. 1 (g), beam constantly from peripheral " air-breathing ", and constantly passes through the heat of chip surface in vibration
" air blowing " is taken away, i.e., further radiated by pattern.
As shown in Fig. 1 (g), using a plurality of girder construction, and hole is provided with beam, further increases area of dissipation, so that
Advantageously in heat loss through radiation.
The be integrated into cabinet or chip of MEMS heat-driven oscillations self adaptation radiating driver are radiated；Can also need
Directly attachment can realize that self adaptation radiates on the thermal source of radiating.
Claims (8)
1. a kind of MEMS heat-driven oscillations self adaptation heat dissipating method, it is characterised in that dissipated using heat-driven oscillation radiating, synthesizing jet-flow
Heat, heat loss through radiation are combined, and a plurality of beam of the heat drive MEMS drivers produced using thermal source is vibrated, and vibration of beam
Change the flow behavior of thermal source heating surface, expand thermograde, so as to realize that self adaptation radiates, using girder construction and on beam
Perforate, increased area of dissipation carries out heat loss through radiation.
2. method according to claim 1, it is characterised in that：Not needing external circuit carries out switch control.
3. method according to claim 1, it is characterised in that：Extra power is not needed to be controlled.
4. a kind of MEMS heat-driven oscillations self adaptation radiating driver using method according to claim 1.
5. MEMS heat-driven oscillations self adaptation according to claim 4 radiating driver, it is characterised in that：Needing radiating
Directly attachment can realize that self adaptation radiates on thermal source.
6. a kind of MEMS heat-driven oscillations self adaptation according to claim 4 radiates the processing method of driver, and its feature exists
In step is as follows：
1）Prepare silicon substrate；
2）Dry-oxygen oxidation is carried out, front and back forms silica；
3）Silica to the back side carries out gluing protection, and front photoetching is removed silica, added using wet etching on silicon
The hole on gap and beam that work goes out between beam；
4）The back side carries out photoetching, removes silica；
5）The silicon at the back side is discharged using plasma dry etch, girder construction is formed；
6）Sheet glass is bonded in silicon chip back side.
7. the MEMS heat-driven oscillations self adaptation radiating driver that a kind of processing method according to claim 6 is obtained.
8. it is a kind of using the MEMS heat-driven oscillations self adaptation according to claim 7 cabinet that is radiated of radiating driver or
Chip.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105823370B (en) * | 2016-04-02 | 2017-10-31 | 浙江大学 | The vibrating enhanced heat transfer unit (HTU) of MEMS passive types and heat-transferring method of thermal drivers |
| CN108223500A (en) * | 2018-03-08 | 2018-06-29 | 南京理工大学 | It is a kind of to utilize piezoelectric vibration film and two electrode plasma combined type synthesizing jet-flow excitors |
| CN108194461A (en) * | 2018-03-08 | 2018-06-22 | 南京理工大学 | It is a kind of to utilize piezoelectric vibration film and three electrode plasma combined type synthesizing jet-flow excitors |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006332101A (en) * | 2005-05-23 | 2006-12-07 | Denso Corp | Cooling system and oscillation flow cooling system |
| CN103130179A (en) * | 2011-12-02 | 2013-06-05 | 横河电机株式会社 | Method of manufacturing resonant transducer |
| CN103840706A (en) * | 2014-02-20 | 2014-06-04 | 东南大学 | Perforated cantilever beam vibration energy self-powered microsensor of Internet-of-things radio frequency transceiving assembly |
| CN103840744A (en) * | 2014-02-20 | 2014-06-04 | 东南大学 | Light, heat, electromagnetism and vibration self-powered micro-nano sensor of Internet-of-things radio frequency transceiving assembly |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020074897A1 (en) * | 2000-12-15 | 2002-06-20 | Qing Ma | Micro-electromechanical structure resonator frequency adjustment using radient energy trimming and laser/focused ion beam assisted deposition |
| JP4724317B2 (en) * | 2001-06-07 | 2011-07-13 | ティーエス ヒートロニクス 株式会社 | Forced oscillating flow heat pipe and design method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006332101A (en) * | 2005-05-23 | 2006-12-07 | Denso Corp | Cooling system and oscillation flow cooling system |
| CN103130179A (en) * | 2011-12-02 | 2013-06-05 | 横河电机株式会社 | Method of manufacturing resonant transducer |
| CN103840706A (en) * | 2014-02-20 | 2014-06-04 | 东南大学 | Perforated cantilever beam vibration energy self-powered microsensor of Internet-of-things radio frequency transceiving assembly |
| CN103840744A (en) * | 2014-02-20 | 2014-06-04 | 东南大学 | Light, heat, electromagnetism and vibration self-powered micro-nano sensor of Internet-of-things radio frequency transceiving assembly |
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