CN104900749A - Optical coupling device and forming method thereof - Google Patents
Optical coupling device and forming method thereof Download PDFInfo
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- CN104900749A CN104900749A CN201410077106.1A CN201410077106A CN104900749A CN 104900749 A CN104900749 A CN 104900749A CN 201410077106 A CN201410077106 A CN 201410077106A CN 104900749 A CN104900749 A CN 104900749A
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000010168 coupling process Methods 0.000 title abstract description 39
- 230000008878 coupling Effects 0.000 title abstract description 37
- 238000005859 coupling reaction Methods 0.000 title abstract description 37
- 230000003287 optical effect Effects 0.000 title abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 214
- 239000004065 semiconductor Substances 0.000 claims abstract description 210
- 239000000835 fiber Substances 0.000 claims description 149
- 239000000463 material Substances 0.000 claims description 65
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 230000015572 biosynthetic process Effects 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 239000003989 dielectric material Substances 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 229910008045 Si-Si Inorganic materials 0.000 claims description 3
- 229910006411 Si—Si Inorganic materials 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 238000003701 mechanical milling Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Provided is an optical coupling device and a forming method thereof. The optical coupling device comprises a first semiconductor substrate, a first groove, a first reflecting layer, a second semiconductor substrate, a second groove, and a second reflecting layer. The first semiconductor substrate comprises a first surface and a second surface opposite to the first surface. The first groove is arranged in the first semiconductor substrate and passes through the first surface of the first semiconductor substrate. The sidewall of the first groove is provided with a first inclination angle. The first reflecting layer is arranged on the surfaces of the sidewall and the bottom of the first groove. The second semiconductor substrate comprises a third surface and a fourth surface opposite to the third surface. The second groove is arranged in the second semiconductor substrate and passes through the third surface of the second semiconductor substrate. The sidewall of the second groove is provided with a second inclination angle. The first inclination angle and the second inclination angle are mutually complementary. The second reflecting layer is arranged on the surfaces of the sidewall and the bottom of the second groove. The first surface of the first semiconductor substrate and the third surface of the second semiconductor substrate are bonded together in order that the first groove and the second groove correspond to each other. The optical coupling device improves coupling efficiency.
Description
Technical field
The present invention relates to field of semiconductor fabrication, more relate to a kind of Light Coupled Device and forming method thereof.
Background technology
Fiber waveguide (optical waveguide) is the leading structure of the transmission light frequency electromagnetic waves be made up of optical transparency medium (as quartz glass).The transmission principle of fiber waveguide is on the dielectric interface of different refractivity, and electromagnetic total reflection phenomenon makes light wave be confined to waveguide and the interior propagation of finite region around thereof.
For in numerous optical waveguide materials of communication band, silicon-on-insulator material is due to its powerful light limitation capability, be easy to the low-loss optically waveguide making submicron order, the manufacture craft of preparation technology and microelectronic integrated circuit is compatible simultaneously, greatly reducing the cost preparing photoelectric chip, make it to become one of material of the most competitiveness realizing high density photoelectricity integrated chip.
The step that existing application silicon-on-insulator material makes fiber waveguide comprises: provide silicon-on-insulator substrate (SOI), and described silicon-on-insulator substrate comprises the basalis, oxidation buried layer and the monocrystalline silicon layer that stack gradually; Etch described monocrystalline silicon layer and expose oxidation buried layer surface, form the monocrystalline silicon inner core of fiber waveguide; Form the dielectric layer covering described inner core and oxidation mask layer surface, described dielectric layer and oxidation buried layer form the covering of fiber waveguide.Refractive index due to monocrystalline silicon layer is greater than the refractive index of dielectric layer and oxidation buried layer, and therefore light is limited in transmitting in monocrystalline silicon inner core.
But along with semiconductor technology development, the characteristic size of current fiber waveguide device has become very little, wish that the quantity increasing fiber waveguide device in the encapsulating structure of two dimension becomes more and more difficult, therefore three-dimension packaging becomes a kind of method that effectively can improve fiber waveguide device integrated level.
Prior art adopts grating coupling technique and silicon light through hole technology (TSPV, Through Silicon Photonic Via) to connect the planar optical waveguide device that two pieces of silicon substrates are formed usually, thus realizes the three-dimension packaging of different optical device.
But the coupling efficiency of the grating coupling technique of prior art is low, be unfavorable for the performance improving fiber waveguide device.
Summary of the invention
The problem that the present invention solves how to improve the coupling efficiency of fiber waveguide device.
For solving the problem, the invention provides a kind of formation method of Light Coupled Device, comprising: providing the first Semiconductor substrate, described first Semiconductor substrate comprises first surface and the second surface relative with first surface; There is provided the second Semiconductor substrate, described second Semiconductor substrate comprises the 3rd surface and four surface relative with the 3rd surface; Etch the first surface of the first Semiconductor substrate, in described first Semiconductor substrate, form the first groove, the sidewall of described first groove has the first inclination angle; The sidewall and lower surface of the first groove form the first reflector; Etch described second Semiconductor substrate the 3rd surface, in described second Semiconductor substrate, form the second groove, the sidewall of described second groove has the second inclination angle, described first inclination angle and the second inclination angle mutually more than; The sidewall and lower surface of described second groove form the second reflector; By the first surface of the first Semiconductor substrate together with the 3rd surface bond of the second Semiconductor substrate, make the first groove corresponding with the second groove.
Optionally, the indices of crystallographic plane of the first surface of described first Semiconductor substrate are (100), and the indices of crystallographic plane on the 3rd surface of the second Semiconductor substrate are (110).
Optionally, described first inclination angle is 54.74 degree, and the second inclination angle is 35.26 degree.
Optionally, the width of the opening of described first groove equals the width of the second slot opening, and the degree of depth of described second groove and the depth ratio of the first groove are 1:2.
Optionally, etching described first Semiconductor substrate and the second Semiconductor substrate, to form the technique that the first groove and the second groove adopt be wet etching.
Optionally, the etching solution that described wet etching adopts is tetramethyl ammonium hydroxide solution, and the mass percent concentration of tetramethyl ammonium hydroxide solution is 18% ~ 27%, and temperature during etching is 75 ~ 85 degrees Celsius.
Optionally, the bonding technology of the first Semiconductor substrate and the second Semiconductor substrate is Si-Si direct bonding technique.
Optionally, also annealing process is comprised after described bonding technology.
Optionally, after the first recess sidewall and bottom form the first reflector, also comprise: in the first groove, form the first fiber waveguide.
Optionally, the thickness of described first fiber waveguide is less than the degree of depth of the first groove.
Optionally, after the sidewall and lower surface of described second groove form the second reflector, be also included in the second groove and form the second fiber waveguide.
Optionally, the thickness of described second fiber waveguide is less than the degree of depth of the second groove.
Optionally, the refractive index of the material in described first reflector and the second reflector is less than the refractive index of the material of the first fiber waveguide and the second fiber waveguide.
Optionally, the material in the first reflector and the second reflector is metal or dielectric material, and described metal is copper, aluminium, gold or silver-colored, and described dielectric material is silicon nitride, silica, silicon oxynitride or carborundum.
Optionally, the material of described first fiber waveguide or the second fiber waveguide is silicon nitride or polysilicon.
Optionally, described first reflector or the second reflector are single or multiple lift stacked structure.
Present invention also offers a kind of Light Coupled Device, comprising: the first Semiconductor substrate, described first Semiconductor substrate comprises first surface and the second surface relative with first surface; Be positioned at the first Semiconductor substrate and run through the first groove of the first surface of the first Semiconductor substrate, the sidewall of described first groove has the first inclination angle; Be positioned at the first reflector in the sidewall of the first groove and lower surface; Second Semiconductor substrate, described second Semiconductor substrate comprises the 3rd surface and four surface relative with the 3rd surface; Be positioned at the second Semiconductor substrate and run through second groove on the 3rd surface of the second Semiconductor substrate, the sidewall of described second groove has the second inclination angle, described first inclination angle and the second inclination angle mutually more than; Be positioned at the second reflector in the second recess sidewall and lower surface; The first surface of the first Semiconductor substrate, together with the 3rd surface bond of the second Semiconductor substrate, makes the first groove corresponding with the second groove.
Optionally, the indices of crystallographic plane of the first surface of described first Semiconductor substrate are (100), and the indices of crystallographic plane on the 3rd surface of the second Semiconductor substrate are (110), and described first inclination angle is 54.74 degree, and the second inclination angle is 35.26 degree.
Optionally, also comprise: the first fiber waveguide being positioned at the first groove, be positioned at the second fiber waveguide of the second groove.
Optionally, the thickness of described first fiber waveguide is less than the degree of depth of the first groove, and the thickness of described second fiber waveguide is less than the degree of depth of the second groove.
Compared with prior art, technical scheme of the present invention has the following advantages:
The formation method of coupled apparatus of the present invention, etches the first surface of the first Semiconductor substrate, in described first Semiconductor substrate, form the first groove, and the sidewall of described first groove has the first inclination angle; The sidewall and lower surface of the first groove form the first reflector; Etch described second Semiconductor substrate the 3rd surface, in described second Semiconductor substrate, form the second groove, the sidewall of described second groove has the second inclination angle, described first inclination angle and the second inclination angle mutually more than; The sidewall and lower surface of described second groove form the second reflector; By the first surface of the first Semiconductor substrate together with the 3rd surface bond of the second Semiconductor substrate, make the first groove corresponding with the second groove.Due to formed the first inclination angle and the second inclination angle mutually more than, the angle in the first reflector in the first recess sidewall and the second reflector in the second recess sidewall is made to be 90 degree, when forming the first fiber waveguide in the first groove, when forming the second fiber waveguide in the second groove, the light wave of the first fiber waveguide transmission is by being directly transferred in the second fiber waveguide by the reflection in the first reflector and the second reflector, thus realize the light wave in the first fiber waveguide and be transferred in the second fiber waveguide by the mode of reflection coupling, coupling efficiency is made to reach more than 90%, greatly improve the efficiency of coupling.
Further, the indices of crystallographic plane of the first surface of described first Semiconductor substrate are (100), the indices of crystallographic plane on the 3rd surface of the second Semiconductor substrate are (110), by the etching of tetramethyl ammonium hydroxide solution, the first inclination angle of the first groove formed can be made to be 54.74 degree, and the second inclination angle of the second groove is 35.26 degree, make the first inclination angle and the second inclination angle mutually more than, technique is simple, and the precision at the first inclination angle and the second inclination angle is high.
Further, the width of the opening of described first groove equals the width of the opening of the second groove, the degree of depth of described second groove and the depth ratio of the first groove are 1:2, by the first surface of the first Semiconductor substrate together with the 3rd surface bond of the second Semiconductor substrate time, the sidewall of the first groove projection width on the first surface of the first Semiconductor substrate is made to equal the projection width of sidewall on the 3rd surface of the second Semiconductor substrate of the second groove, when the first reflector of the first recess sidewall is to the direction coupled reflection light wave of the second Semiconductor substrate, second reflector of the second recess sidewall can accept whole reflecting lights, thus prevent loss or the loss of Light Coupled Device light wave when carrying out light wave coupling, improve coupling efficiency.
Coupled apparatus of the present invention comprises: the first Semiconductor substrate and the second Semiconductor substrate, there is in first Semiconductor substrate the first groove of the first surface running through the first Semiconductor substrate, the sidewall of described first groove has the first inclination angle, and the sidewall of the first groove and lower surface have the first reflector; Have second groove on the 3rd surface running through the second Semiconductor substrate in second Semiconductor substrate, the sidewall of described second groove has the second inclination angle, described first inclination angle and the second inclination angle mutually more than; The first surface of the first Semiconductor substrate, together with the 3rd surface bond of the second Semiconductor substrate, makes the first groove corresponding with the second groove.When the first surface of the first Semiconductor substrate is together with the 3rd surface bond of the second Semiconductor substrate, the second reflector on the first reflector on first groove side sidewall and the second groove homonymy sidewall forms coupled apparatus, due to the first inclination angle and the second inclination angle mutually more than, the angle in the first reflector in the first recess sidewall and the second reflector in the second recess sidewall is made to be 90 degree, when forming the first fiber waveguide in the first groove, when forming the second fiber waveguide in the second groove, the light wave of the first fiber waveguide transmission is by being directly transferred in the second fiber waveguide by the reflection in the first reflector and the second reflector, thus realize the light wave in the first fiber waveguide and be transferred in the second fiber waveguide by the mode of reflection coupling, coupling efficiency is made to reach more than 90%, greatly improve the efficiency of coupling.
Further, the thickness of described first fiber waveguide is less than the degree of depth of the first groove, the surface of the first fiber waveguide namely formed in the first groove will lower than the first surface of the first Semiconductor substrate, during by the first surface of the first Semiconductor substrate together with the 3rd surface bond of the second Semiconductor substrate, prevent the surface contact of the second fiber waveguide in the surface of the first fiber waveguide in the first groove of the first Semiconductor substrate and the second groove of the second Semiconductor substrate, prevent the mutual interference between the first fiber waveguide and the second fiber waveguide, be conducive to the performance improving device.
Further, the thickness of described second fiber waveguide is less than the degree of depth of the second groove, the surface of the second fiber waveguide namely formed in the second groove will lower than the 3rd surface of the first Semiconductor substrate, follow-up by the first surface of the first Semiconductor substrate together with the 3rd surface bond of the second Semiconductor substrate time, prevent the surface contact of the second fiber waveguide in the surface of the first fiber waveguide in the first groove of the first Semiconductor substrate and the second groove of the second Semiconductor substrate, prevent the mutual interference between the first fiber waveguide and the second fiber waveguide, be conducive to the performance improving device.
Accompanying drawing explanation
Fig. 1 ~ Fig. 9 is the structural representation of embodiment of the present invention Light Coupled Device forming process.
Embodiment
In the three-dimension packaging structure of prior art, the grating coupled mode of usual employing realizes the connection between the planar optical waveguide on two silicon substrates, due to the coupling that grating coupled mode is not reflective, in the process of coupling, the loss of light wave is larger, the efficiency of coupling is very low, and usual grating coupled efficiency only has 20% ~ 70%.
For this reason, embodiments provide a kind of Light Coupled Device and forming method thereof, coupled apparatus of the present invention comprises: the first Semiconductor substrate and the second Semiconductor substrate, there is in first Semiconductor substrate the first groove of the first surface running through the first Semiconductor substrate, the sidewall of described first groove has the first inclination angle, and the sidewall of the first groove and lower surface have the first reflector; Have second groove on the 3rd surface running through the second Semiconductor substrate in second Semiconductor substrate, the sidewall of described second groove has the second inclination angle, described first inclination angle and the second inclination angle mutually more than; The first surface of the first Semiconductor substrate, together with the 3rd surface bond of the second Semiconductor substrate, makes the first groove corresponding with the second groove.When the first surface of the first Semiconductor substrate is together with the 3rd surface bond of the second Semiconductor substrate, the second reflector on the first reflector on first groove side sidewall and the second groove homonymy sidewall forms coupled apparatus, due to the first inclination angle and the second inclination angle mutually more than, the angle in the first reflector in the first recess sidewall and the second reflector in the second recess sidewall is made to be 90 degree, when forming the first fiber waveguide in the first groove, when forming the second fiber waveguide in the second groove, the light wave of the first fiber waveguide transmission is by being directly transferred in the second fiber waveguide by the reflection in the first reflector and the second reflector, thus realize the light wave in the first fiber waveguide and be transferred in the second fiber waveguide by the mode of reflection coupling, coupling efficiency is made to reach more than 90%, greatly improve the efficiency of coupling.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.When describing the embodiment of the present invention in detail, for ease of illustrating, schematic diagram can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, and it should not limit the scope of the invention at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
Fig. 1 ~ Fig. 9 is the structural representation of the forming process of embodiment of the present invention Light Coupled Device.
With reference to figure 1, provide the first Semiconductor substrate 200, described first Semiconductor substrate 200 comprises first surface 11 and the second surface 12 relative with first surface 11; Form mask layer 201 on the surface in the first Semiconductor substrate 200, there is in described mask layer 201 opening exposing the first Semiconductor substrate 200 surface.
The material of described first Semiconductor substrate 200 is silicon.Follow-up formation first groove in described first Semiconductor substrate 200, the sidewall of the first groove has the first angle of inclination.
In order to the first angle of inclination of the sidewall making follow-up formation first groove has higher precision, in the embodiment of the present invention, utilize tetramethyl ammonium hydroxide solution when etch silicon substrate along the characteristic that the etch rate of different crystal face is different, form the first groove.In the embodiment of the present invention, the indices of crystallographic plane of the first surface 11 of described first Semiconductor substrate 200 are (100), there is in first Semiconductor substrate 200 crystal face that the indices of crystallographic plane are (111), (100) angle of crystal face and (111) crystal face is 54.74 °, follow-up when adopting tetramethyl ammonium hydroxide solution wet etching the first Semiconductor substrate 200, etch rate along crystal face (111) is larger, make the sidewall of the first groove formed have the first angle of inclination, the first angle of inclination equals 54.74 °.
Described mask layer 201 is as mask during subsequent etching the first Semiconductor substrate 200, and described mask layer 201 is silica or silicon nitride etc.Formed after mask layer 201, mask layer 201 form patterned photoresist layer, then with patterned photoresist layer for mask, etch described mask layer 201, in mask layer 201, form opening.
With reference to figure 2, etch the first surface 11 of the first Semiconductor substrate 200, in described first Semiconductor substrate 200, form the first groove 203, the sidewall of described first groove 203 has the first inclination angle.
Etch described first Semiconductor substrate 200 and adopt wet-etching technology.In the present embodiment, described in excute a law etching technics adopt Tetramethylammonium hydroxide (TMAH) solution.The mass percent concentration of described tetramethyl ammonium hydroxide solution is 18% ~ 27%, and temperature during etching is 75 ~ 85 degrees Celsius., improve the precision at the first inclination angle of the sidewall of the first groove 203 formed.
During Tetramethylammonium hydroxide (TMAH) solution etches the first Semiconductor substrate 200, Tetramethylammonium hydroxide (TMAH) solution is very fast along the etch rate of crystal face (111), the first groove 203 formed has sloped sidewall, the indices of crystallographic plane of the sidewall of the first groove 203 are (111), and the first angle of inclination of the sidewall of the first groove 203 is 54.74 °.
With reference to figure 3, the sidewall and lower surface of the first groove 203 form the first reflector 204.
Described first reflector 204 is for the reflector as light wave, the first reflector 204 on first groove 203 sidewall is a part for Light Coupled Device, the first inclination angle due to the sidewall of the first groove 203 is 54.74 °, makes the angle of inclination in the first reflector 204 that the first groove 203 sidewall is formed also be 54.74 ° accordingly.
The forming process in concrete described first reflector 204 is: formed cover described first groove 203 sidewall and lower surface and mask layer 201(with reference to figure 2) surperficial the first layer of reflective material; Adopt chemical mechanical milling tech to remove mask layer 201 on the first Semiconductor substrate 200 surface and the first layer of reflective material, form the first reflector 204 at the sidewall of the first groove 203 and lower surface.In other embodiments of the invention, described chemical mechanical milling tech also can follow-up in the first groove, form first wave guide material layer after carry out.
The material in described first reflector 204 can be metal, and described metal can be copper, aluminium, gold or silver-colored.Metal material has less refraction coefficient, and the light wave in follow-up first fiber waveguide easily total reflection occurs when being transferred to the first reflective layer interfaces, the loss of the light wave in less transmitting procedure, is conducive to the coupling efficiency improving Light Coupled Device.
The material in described first reflector 204 can also be dielectric material, and described dielectric material is silicon nitride, silica, silicon oxynitride or carborundum.
In the present embodiment, the material in described first reflector 204 is silica.
With reference to figure 4, at described first groove 203(with reference to figure 3) in formed the first fiber waveguide 205.
The refractive index of described first fiber waveguide 205 material is greater than the refractive index of the first reflector 204 material, and the light wave in the first fiber waveguide 205 can produce total reflection when being transferred to the first reflector 204.
The material of described first fiber waveguide 205 is silicon nitride (Si
3n
4) or polysilicon.In the present embodiment, the material of described first wave conducting shell 205 is silicon nitride, relative to the first reflector 204 material (silica), the refractive index of the material of first wave conducting shell 205 is much larger than the refractive index of the first reflector 204 material, follow-up after by the first Semiconductor substrate 200 and the second Semiconductor substrate bonding, in first fiber waveguide 205 easily there is total reflection and be coupled to the direction of the second Semiconductor substrate in light wave in first reflector of transmission on the first groove 203 sidewall, the coupling efficiency of raising Light Coupled Device.
The forming process of described first fiber waveguide 205 is: on the first surface of the first Semiconductor substrate 200, form the first optical waveguide material layer, and described first optical waveguide material layer fills full first groove 203; First optical waveguide material layer described in planarization, forms the first fiber waveguide in described first groove 203.
In the present embodiment, the thickness of described first fiber waveguide 205 is less than the first groove 203(with reference to figure 3) the degree of depth, the surface of the first fiber waveguide 205 namely formed in the first groove 203 will lower than the first surface 11 of the first Semiconductor substrate 200, follow-up by the first surface 11 of the first Semiconductor substrate 200 together with the 3rd surface bond of the second Semiconductor substrate time, prevent the surface contact of the second fiber waveguide in the surface of the first fiber waveguide 205 in the first groove 203 of the first Semiconductor substrate 200 and the second groove of the second Semiconductor substrate, prevent the mutual interference between the first fiber waveguide and the second fiber waveguide, be conducive to the performance improving device.
In the embodiment of the present invention, the surface of the first fiber waveguide 205 can be made to be 20 ~ 100 dusts lower than the surface of first surface 11, first fiber waveguide 205 of the first Semiconductor substrate 200 lower than the distance of the first surface 11 of the first Semiconductor substrate 200 by returning etching technics.
In other embodiments of the invention, during first surface lower than the first Semiconductor substrate of the surface of the first fiber waveguide, dielectric layer is formed on the surface of the first fiber waveguide, the refractive index of described dielectric layer material is less than the refractive index of the first optical waveguide material, described dielectric layer material can be silica etc., described dielectric layer material can limit light wave and transmit in the first fiber waveguide, follow-up by the first surface of the first Semiconductor substrate together with the 3rd surface bond of the second Semiconductor substrate time, and can prevent the first fiber waveguide from directly contacting with the second fiber waveguide.
In other embodiments of the invention, form the first fiber waveguide in the first groove after, etch described first fiber waveguide, in the first groove, form some parallel wavelets lead, described wavelet leads the opposite side pointing to the first groove from the side of the first groove.
In other embodiments of the invention, after formation first fiber waveguide, the first fiber waveguide can also be etched, first fiber waveguide is therefrom separated, form two sub-waveguides, follow-up by the first surface of the first Semiconductor substrate together with the 3rd surface bond of the second Semiconductor substrate time, two sub-waveguides can respectively from the first groove on corresponding sidewall the first reflector to the direction coupling light wave of the second Semiconductor substrate.
In other embodiments of the invention, also comprise: form one deck silicon oxide layer at the first surface of the first Semiconductor substrate and the first light guide surface, described silicon oxide layer is when the follow-up second surface by the first surface of the first Semiconductor substrate and the second Semiconductor substrate is bonded together, can improve the firmness of bonding face, described silicon oxide layer can also be used for the isolation between the first fiber waveguide and the second fiber waveguide in addition.
With reference to figure 5, provide the second Semiconductor substrate 300, described second Semiconductor substrate 300 comprises the 3rd surface 13 and four surface 14 relative with the 3rd surface 13; 3rd surface 13 of described second Semiconductor substrate 300 forms mask layer 301, there is in described mask layer 301 opening on the 3rd surface 13 of exposure second Semiconductor substrate 300.
The material of described second Semiconductor substrate 300 is silicon.Follow-up formation second groove in described second Semiconductor substrate 300, the sidewall of the second groove has the second angle of inclination.
In order to the second angle of inclination of the sidewall making follow-up formation second groove has higher precision, in the embodiment of the present invention, utilize tetramethyl ammonium hydroxide solution when etch silicon substrate along the characteristic that the etch rate of different crystal face is different, form the second groove.In the embodiment of the present invention, the indices of crystallographic plane on the 3rd surface 13 of described second Semiconductor substrate 300 are (110), there is in second Semiconductor substrate 300 crystal face that the indices of crystallographic plane are (111), (110) angle of crystal face and (111) crystal face is 25.26 °, follow-up when adopting tetramethyl ammonium hydroxide solution wet etching the second Semiconductor substrate 300, etch rate along crystal face (111) is larger, make the sidewall of the second groove formed have the second angle of inclination, the second angle of inclination equals 25.26 °.
Described mask layer 301 is as mask during subsequent etching the second Semiconductor substrate 300, and described mask layer 301 is silica or silicon nitride etc.Formed after mask layer 301, mask layer 301 form patterned photoresist layer, then with patterned photoresist layer for mask, etch described mask layer 301, in mask layer 301, form opening.
With reference to figure 6, etch the 3rd surface 13 of described second Semiconductor substrate 300, in described second Semiconductor substrate 300, form the second groove 303, the sidewall of described second groove 303 has the second inclination angle, described first inclination angle and the second inclination angle mutually more than.
Etch described second Semiconductor substrate 300 and adopt wet-etching technology.In the present embodiment, described in excute a law etching technics adopt Tetramethylammonium hydroxide (TMAH) solution.The mass percent concentration of described tetramethyl ammonium hydroxide solution is 18% ~ 27%, and temperature during etching is 75 ~ 85 degrees Celsius., improve the precision at the second inclination angle of the sidewall of the second groove 303 formed.
During Tetramethylammonium hydroxide (TMAH) solution etches the second Semiconductor substrate 300, Tetramethylammonium hydroxide (TMAH) solution is very fast along the etch rate of crystal face (111), the second groove 303 formed has sloped sidewall, the indices of crystallographic plane of the sidewall of the second groove 303 formed are (111), and the second angle of inclination of the sidewall of the second groove 303 is 25.26 °.
In embodiments of the invention, first groove 203(is with reference to figure 2) the angle at the first inclination angle and the second inclination angle of the second groove 303 angle mutually more than, follow-up the first Semiconductor substrate 200(be please refer to Fig. 2) first surface 11(please refer to Fig. 2) and the 3rd surface 13 of the second Semiconductor substrate 300 is bonded together time, the angle making the second reflector on the first reflector of the first groove 203 sidewall and the second groove 303 sidewall is 90 °, thus the light wave realizing the first fiber waveguide 205 in the first groove 203 is to total reflection coupling during the second fiber waveguide transmission in the second groove 303, improve the efficiency of coupling.And, described first groove 203(is with reference to figure 2) the width of opening equal the width of the opening of the second groove 303, the degree of depth of described second groove 303 and the depth ratio of the first groove 203 are 1:2, when the first surface 11 of the first Semiconductor substrate 200 and the 3rd surface 13 of the second Semiconductor substrate 300 are bonded together, the sidewall of the first groove 203 projection width on the first surface 11 of the first Semiconductor substrate 200 is made to equal the projection width of sidewall on the 3rd surface 13 of the second Semiconductor substrate 300 of the second groove 303, when the first reflector 204(of the first groove 203 sidewall is with reference to figure 3) to the direction coupled reflection light wave of the second Semiconductor substrate 300 time, second reflector of the second groove 303 sidewall can accept whole reflecting lights, and reflect, thus prevent the loss of Light Coupled Device light wave when carrying out light wave coupling, improve coupling efficiency.
With reference to figure 7, the sidewall and lower surface of described second groove 303 form the second reflector 304.
Described second reflector 304 is for the reflector as light wave, the second reflector 304 on second groove 303 sidewall is a part for Light Coupled Device, the second inclination angle due to the sidewall of the second groove 303 is 25.26 °, makes the angle of inclination in the second reflector 304 that the second groove 303 sidewall is formed also be 25.26 ° accordingly.
The forming process in concrete described second reflector 304 is: formed cover described second groove 303 sidewall and lower surface and mask layer 301(with reference to figure 6) surperficial the second layer of reflective material; Adopt chemical mechanical milling tech to remove mask layer 301 on the second Semiconductor substrate 300 surface and the second layer of reflective material, form the second reflector 304 at the sidewall of the second groove 303 and lower surface.In other embodiments of the invention, described chemical mechanical milling tech also can follow-up in the second groove, form the second waveguide material layer after carry out.
The material in described second reflector 304 can be metal, and described metal can be copper, aluminium, gold or silver-colored.The material in described second reflector 304 can also be dielectric material, and described dielectric material is silicon nitride, silica, silicon oxynitride or carborundum.
In the present embodiment, the material in described second reflector 304 please refer to Fig. 3 with the first reflector 204() material identical, make the second reflector 304 identical with the refractive index in the first reflector 204, be conducive to the total reflection of Light Coupled Device when light wave reflection and transmission precision, the material in described second reflector 304 is silica.
With reference to figure 8, at the second groove 303(with reference to figure 7) in formed the second fiber waveguide 305.
Described in the refractive index that the refractive index of described second fiber waveguide 305 material is greater than the second reflector 304 material, the material of the second fiber waveguide 305 is silicon nitride (Si
3n
4) or polysilicon.In the present embodiment, the material of described second fiber waveguide 305 is silicon nitride.
The forming process of the second fiber waveguide 305 is: on the 3rd surface 13 of the second Semiconductor substrate 300, form the second optical waveguide material layer, and described first optical waveguide material layer fills full second groove 303; Second optical waveguide material layer described in planarization, forms the second fiber waveguide 305 in described second groove.
In the present embodiment, the thickness of described second fiber waveguide 305 is less than the second groove 303(with reference to figure 7) the degree of depth, the surface of the second fiber waveguide 305 namely formed in the second groove 303 will lower than the 3rd surface 13 of the second Semiconductor substrate 300, follow-up by the first surface 11(of the first Semiconductor substrate 200 with reference to figure 4) and the 3rd surface 13 of the second Semiconductor substrate 300 is bonded together time, prevent the first fiber waveguide 205(in the first groove 203 of the first Semiconductor substrate 200 with reference to figure 4) surface and the second Semiconductor substrate 300 the second groove 303 in the surface contact of the second fiber waveguide 305, prevent the mutual interference between the first fiber waveguide 205 and the second fiber waveguide 305, be conducive to the performance improving device.
In the embodiment of the present invention, the surface of the second fiber waveguide 305 can be made to be 20 ~ 100 dusts lower than the surface of the 3rd surface 13, second fiber waveguide 305 of the second Semiconductor substrate 300 lower than the distance on the 3rd surface 13 of the second Semiconductor substrate 300 by returning etching technics.
In other embodiments of the invention, during the 3rd surface lower than the second Semiconductor substrate, the surface of the second fiber waveguide, dielectric layer is formed on the surface of the second fiber waveguide, the refractive index of described dielectric layer material is less than the refractive index of the second optical waveguide material, described dielectric layer material can be silica etc., described dielectric layer material can limit light wave and transmit in the second fiber waveguide, follow-up by the first surface of the first Semiconductor substrate together with the 3rd surface bond of the second Semiconductor substrate time, and can prevent the first fiber waveguide from directly contacting with the second fiber waveguide.
In other embodiments of the invention, form the second fiber waveguide in the second groove after, etch described second fiber waveguide, in the second groove, form some parallel wavelets lead, described wavelet leads the opposite side pointing to the second groove from the side of the second groove.
In other embodiments of the invention, after formation second fiber waveguide, the second fiber waveguide can also be etched, the second fiber waveguide is therefrom separated, form two sub-waveguides.
In other embodiments of the invention, also comprise: form one deck silicon oxide layer on the 3rd surface of the second Semiconductor substrate and the second light guide surface, described silicon oxide layer is when the follow-up second surface by the first surface of the first Semiconductor substrate and the second Semiconductor substrate is bonded together, can improve the firmness of bonding face, described silicon oxide layer can also be used for the isolation between the first fiber waveguide and the second fiber waveguide in addition.
With reference to figure 9, the first surface 11 of the first Semiconductor substrate 200 and the 3rd surface 13 of the second Semiconductor substrate 300 are bonded together, make the first groove 203(with reference to figure 3) with the second groove 303(with reference to figure 6) corresponding.
By Si-Si direct bonding technique, the first surface 11 of the first Semiconductor substrate 200 and the 3rd surface 13 of the second Semiconductor substrate 300 are bonded together.
After bonding, also comprise annealing process, the temperature of annealing is 200 ~ 700 degrees Celsius, and annealing time is 30 minutes ~ 6 hours, is conducive to the growth of bonding face crystal grain, makes bonding face more firm by annealing.
After the first surface 11 of the first Semiconductor substrate 200 and the 3rd surface 13 of the second Semiconductor substrate 300 are bonded together, first groove 203 corresponding with the second groove 303 (the first groove 203 corresponding to the second groove 303 upper-lower position), the first fiber waveguide 205 in first groove 203 corresponding with the second fiber waveguide 305 in the second groove 303 (the first fiber waveguide 205 corresponding to the second fiber waveguide 305 upper-lower position), the angle in the first reflector 204 on the first groove 203 sidewall and the second reflector 304 in the second recess sidewall is 90 °, in the present embodiment, transmit in the second fiber waveguide 305 with the light wave in the first fiber waveguide 205 and do exemplary illustration, the light wave that direction parallel with the first surface 11 of the first Semiconductor substrate 200 in first fiber waveguide 205 is transmitted, there is total reflection in the first reflector 204 of the first groove 203 sidewall, to the second Semiconductor substrate 300 direction (upwards) coupled transfer, the light wave of the second Semiconductor substrate 300 direction (upwards) coupled transfer there is total reflection in the second reflector 304 on the second groove 303 sidewall of the second Semiconductor substrate 300, change the light wave parallel with the first surface 11 of the first Semiconductor substrate 200 into be received by the second fiber waveguide 305, the light wave realized in the first fiber waveguide 205 transmits to the second fiber waveguide 305, because transmitting procedure adopts the mode of total reflection coupling, loss or the loss of light wave are very little, coupling efficiency can reach more than 90%, greatly improve coupling efficiency.
The embodiment of the present invention additionally provides a kind of Light Coupled Device, please refer to Fig. 9, comprising:
First Semiconductor substrate 200, described first Semiconductor substrate 200 comprises first surface 11 and the second surface 12 relative with first surface 11;
Be positioned at the first Semiconductor substrate 200 and run through the first groove of the first surface 11 of the first Semiconductor substrate 200, the sidewall of described first groove has the first inclination angle;
Be positioned at the first reflector 204 in the sidewall of the first groove and lower surface;
Second Semiconductor substrate 300, described second Semiconductor substrate 300 comprises the 3rd surface 13 and four surface 14 relative with the 3rd surface 13;
Be positioned at the second Semiconductor substrate 300 and run through second groove on the 3rd surface 13 of the second Semiconductor substrate 300, the sidewall of described second groove has the second inclination angle, described first inclination angle and the second inclination angle mutually more than;
Be positioned at the second reflector 304 in the second recess sidewall and lower surface;
The first surface 11 of the first Semiconductor substrate 200 and the 3rd surface 13 of the second Semiconductor substrate 300 are bonded together, and make the first groove corresponding with the second groove.
Concrete, the indices of crystallographic plane of the first surface 11 of described first Semiconductor substrate 200 are (110), the indices of crystallographic plane of the first recess sidewall are (111), the indices of crystallographic plane on the 3rd surface of the second Semiconductor substrate are (110), the indices of crystallographic plane of the second recess sidewall are (111), first inclination angle of the sidewall of the first groove is 54.74 degree, and the second inclination angle of the second recess sidewall is 35.26 degree.
Also comprise: the first fiber waveguide 205 being positioned at the first groove, be positioned at the second fiber waveguide 305 of the second groove.
The refractive index of described first fiber waveguide 205 and the second fiber waveguide 305 material is greater than the refractive index of the first reflector 204 material, and the material of described first fiber waveguide 205 and the second fiber waveguide 305 is silicon nitride (Si
3n
4) or polysilicon.In the present embodiment, the material of described first wave conducting shell 205 and the second fiber waveguide 305 is silicon nitride.
The thickness of described first fiber waveguide 205 is less than the degree of depth of the first groove, and the thickness of described second fiber waveguide 305 is less than the degree of depth of the second groove.
In other embodiments of the invention, during first surface lower than the first Semiconductor substrate of the surface of the first fiber waveguide, form dielectric layer on the surface of the first fiber waveguide, the refractive index of described dielectric layer material is less than the refractive index of the first optical waveguide material.
In other embodiments of the invention, described first fiber waveguide comprises the some parallel wavelet being positioned at the first groove and leads, and described wavelet leads the opposite side pointing to the first groove from the side of the first groove.
In other embodiments of the invention, described first fiber waveguide comprises two therefrom separated sub-waveguides.
In other embodiments of the invention, during the 3rd surface lower than the second Semiconductor substrate, the surface of the second fiber waveguide, form dielectric layer on the surface of the second fiber waveguide, the refractive index of described dielectric layer material is less than the refractive index of the second optical waveguide material.
In other embodiments of the invention, described second fiber waveguide comprises the some parallel wavelet being positioned at the second groove and leads, and described wavelet leads the opposite side pointing to the second groove from the side of the second groove.
In other embodiments of the invention, described second fiber waveguide comprises two therefrom separated sub-waveguides.
The angle in the second reflector 304 in the first reflector 204 of the first recess sidewall and the second recess sidewall is 90 °, thus the light wave realizing the first fiber waveguide 205 in the first groove when transmitting to the second fiber waveguide 305 in the second groove total reflection coupling, improve the efficiency of coupling.And, the width of the opening of described first groove equals the width of the opening of the second groove, the degree of depth of described second groove and the depth ratio of the first groove are 1:2, the sidewall of the first groove projection width on the first surface 11 of the first Semiconductor substrate 200 is made to equal the projection width of sidewall on the 3rd surface 13 of the second Semiconductor substrate 300 of the second groove, when the first reflector 204 of the first recess sidewall is to the direction coupled reflection light wave of the second Semiconductor substrate 300, second reflector of the second recess sidewall can accept whole reflecting lights, and reflect, thus prevent the loss of Light Coupled Device light wave when carrying out light wave coupling, improve coupling efficiency.
The material in described first reflector 204 or the second reflector 304 can be metal, and described metal can be copper, aluminium, gold or silver-colored.
The material in described first reflector 204 or the second reflector 304 can also be dielectric material, and described dielectric material is silicon nitride, silica, silicon oxynitride or carborundum.
In the present embodiment, described first reflector 204 is identical with the material in the second reflector 304, and the material in the first reflector 204 and the second reflector 304 is silica.
To sum up, embodiment of the present invention Light Coupled Device and forming method thereof, realizes the coupling of light wave by the mode of total reflection, improve the efficiency of coupling.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (20)
1. a formation method for Light Coupled Device, is characterized in that, comprising:
There is provided the first Semiconductor substrate, described first Semiconductor substrate comprises first surface and the second surface relative with first surface;
There is provided the second Semiconductor substrate, described second Semiconductor substrate comprises the 3rd surface and four surface relative with the 3rd surface;
Etch the first surface of the first Semiconductor substrate, in described first Semiconductor substrate, form the first groove, the sidewall of described first groove has the first inclination angle;
The sidewall and lower surface of the first groove form the first reflector;
Etch described second Semiconductor substrate the 3rd surface, in described second Semiconductor substrate, form the second groove, the sidewall of described second groove has the second inclination angle, described first inclination angle and the second inclination angle mutually more than;
The sidewall and lower surface of described second groove form the second reflector;
By the first surface of the first Semiconductor substrate together with the 3rd surface bond of the second Semiconductor substrate, make the first groove corresponding with the second groove.
2. the formation method of Light Coupled Device as claimed in claim 1, it is characterized in that, the indices of crystallographic plane of the first surface of described first Semiconductor substrate are (100), and the indices of crystallographic plane on the 3rd surface of the second Semiconductor substrate are (110).
3. the formation method of Light Coupled Device as claimed in claim 2, it is characterized in that, described first inclination angle is 54.74 degree, and the second inclination angle is 35.26 degree.
4. the formation method of the Light Coupled Device as described in claim 1 or 3, is characterized in that, the width of the opening of described first groove equals the width of the second slot opening, and the degree of depth of described second groove and the depth ratio of the first groove are 1:2.
5. the formation method of the Light Coupled Device as described in claim 1 or 3, is characterized in that, etching described first Semiconductor substrate and the second Semiconductor substrate, to form the technique that the first groove and the second groove adopt be wet etching.
6. the formation method of Light Coupled Device as claimed in claim 5, it is characterized in that, the etching solution that described wet etching adopts is tetramethyl ammonium hydroxide solution, and the mass percent concentration of tetramethyl ammonium hydroxide solution is 18% ~ 27%, and temperature during etching is 75 ~ 85 degrees Celsius.
7. the formation method of Light Coupled Device as claimed in claim 1, it is characterized in that, the bonding technology of the first Semiconductor substrate and the second Semiconductor substrate is Si-Si direct bonding technique.
8. the formation method of Light Coupled Device as claimed in claim 7, is characterized in that, also comprise annealing process after described bonding technology.
9. the formation method of Light Coupled Device as claimed in claim 1, is characterized in that, after the first recess sidewall and bottom form the first reflector, also comprise: in the first groove, form the first fiber waveguide.
10. the formation method of Light Coupled Device as claimed in claim 9, it is characterized in that, the thickness of described first fiber waveguide is less than the degree of depth of the first groove.
The formation method of 11. Light Coupled Device as claimed in claim 9, is characterized in that, after the sidewall and lower surface of described second groove form the second reflector, is also included in the second groove and forms the second fiber waveguide.
The formation method of 12. Light Coupled Device as claimed in claim 11, is characterized in that, the thickness of described second fiber waveguide is less than the degree of depth of the second groove.
The formation method of 13. Light Coupled Device as claimed in claim 11, is characterized in that, the refractive index of the material in described first reflector and the second reflector is less than the refractive index of the material of the first fiber waveguide and the second fiber waveguide.
The formation method of 14. Light Coupled Device as claimed in claim 13, it is characterized in that, the material in the first reflector and the second reflector is metal or dielectric material, and described metal is copper, aluminium, gold or silver-colored, and described dielectric material is silicon nitride, silica, silicon oxynitride or carborundum.
The formation method of 15. Light Coupled Device as claimed in claim 13, is characterized in that, the material of described first fiber waveguide or the second fiber waveguide is silicon nitride or polysilicon.
The formation method of 16. Light Coupled Device as claimed in claim 13, it is characterized in that, described first reflector or the second reflector are single or multiple lift stacked structure.
17. 1 kinds of Light Coupled Device, is characterized in that, comprising:
First Semiconductor substrate, described first Semiconductor substrate comprises first surface and the second surface relative with first surface;
Be positioned at the first Semiconductor substrate and run through the first groove of the first surface of the first Semiconductor substrate, the sidewall of described first groove has the first inclination angle;
Be positioned at the first reflector in the sidewall of the first groove and lower surface;
Second Semiconductor substrate, described second Semiconductor substrate comprises the 3rd surface and four surface relative with the 3rd surface;
Be positioned at the second Semiconductor substrate and run through second groove on the 3rd surface of the second Semiconductor substrate, the sidewall of described second groove has the second inclination angle, described first inclination angle and the second inclination angle mutually more than;
Be positioned at the second reflector in the second recess sidewall and lower surface;
The first surface of the first Semiconductor substrate, together with the 3rd surface bond of the second Semiconductor substrate, makes the first groove corresponding with the second groove.
18. Light Coupled Device as claimed in claim 17, it is characterized in that, the indices of crystallographic plane of the first surface of described first Semiconductor substrate are (100), the indices of crystallographic plane on the 3rd surface of the second Semiconductor substrate are (110), described first inclination angle is 54.74 degree, and the second inclination angle is 35.26 degree.
19. Light Coupled Device as claimed in claim 17, is characterized in that, also comprise: the first fiber waveguide being positioned at the first groove, be positioned at the second fiber waveguide of the second groove.
20. Light Coupled Device as claimed in claim 19, it is characterized in that, the thickness of described first fiber waveguide is less than the degree of depth of the first groove, the thickness of described second fiber waveguide is less than the degree of depth of the second groove.
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| CN110596811A (en) * | 2019-10-10 | 2019-12-20 | 联合微电子中心有限责任公司 | Grating coupling structure and manufacturing method thereof |
| WO2020098651A1 (en) * | 2018-11-13 | 2020-05-22 | 苏州晶方半导体科技股份有限公司 | Optical waveguide |
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| CN101122655A (en) * | 2007-09-25 | 2008-02-13 | 晶方半导体科技（苏州）有限公司 | Optical waveguide and its manufacture method thereof |
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| US20040000674A1 (en) * | 2002-06-28 | 2004-01-01 | Taizo Tomioka | Optically coupled semiconductor device and method for manufacturing the same |
| CN101122655A (en) * | 2007-09-25 | 2008-02-13 | 晶方半导体科技（苏州）有限公司 | Optical waveguide and its manufacture method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105590844A (en) * | 2015-12-23 | 2016-05-18 | 西安龙腾新能源科技发展有限公司 | Super junction structure deep groove manufacturing method |
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| WO2020098651A1 (en) * | 2018-11-13 | 2020-05-22 | 苏州晶方半导体科技股份有限公司 | Optical waveguide |
| CN110596811A (en) * | 2019-10-10 | 2019-12-20 | 联合微电子中心有限责任公司 | Grating coupling structure and manufacturing method thereof |
| CN110596811B (en) * | 2019-10-10 | 2020-07-17 | 联合微电子中心有限责任公司 | Grating coupling structure and manufacturing method thereof |
| CN112582495A (en) * | 2020-12-03 | 2021-03-30 | 无锡中微晶园电子有限公司 | Infrared enhanced silicon-based photoelectric detector |
| CN112582495B (en) * | 2020-12-03 | 2024-04-09 | 无锡中微晶园电子有限公司 | Infrared reinforced silicon-based photoelectric detector |
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