CN104897446B - A kind of sample preparation methods analyzed based on dynamic electric voltage contrast - Google Patents
A kind of sample preparation methods analyzed based on dynamic electric voltage contrast Download PDFInfo
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- CN104897446B CN104897446B CN201510277921.7A CN201510277921A CN104897446B CN 104897446 B CN104897446 B CN 104897446B CN 201510277921 A CN201510277921 A CN 201510277921A CN 104897446 B CN104897446 B CN 104897446B
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Abstract
The invention discloses a kind of sample preparation methods analyzed based on dynamic electric voltage contrast, plane lapping is carried out to testing sample first, until exposing its test structure, then testing sample is pasted onto on encapsulation base plate, then the Pad of test structure and encapsulation base plate leg are connected using bonding wire, then the leg of encapsulation base plate is connected into battery by conductive tape, completes to be electrically connected with, testing sample is tested.The sample preparation methods analyzed based on dynamic electric voltage contrast that the present invention is provided, relative to traditional nanometer probe system, with the low feature of easy to operate, time-consuming extremely short, cost, operation detection mode can be effectively set to become simple, operator is not needed to have very abundant operating experience to it, using low operation cost, reliability, accuracy and the efficiency of analysis of analysis are improved.
Description
Technical field
The invention belongs to semiconductor integrated circuit manufacturing equipment field, it is related to a kind of sample analyzed based on dynamic electric voltage contrast
Product preparation method.
Background technology
The effect that IC chip is played in the production and living of people is more and more huger, however, chip is in development, life
Failure during production and use is inevitable.Continuous improvement with people to product quality and reliability requirement, failure point
Analysis also seem more and more important, analyzed by chip failure, can help Integrated circuit designers find design on defect,
The problems such as mismatch of technological parameter or design are with improper in operation, is that design engineer updates or repaired chip
Design, being allowed to more coincide with design specification provides necessary feedback information, also, failure analysis can assess it is different test to
The validity of amount, necessary supplement is provided for production test, is that validation test process optimization is submitted necessary information basis.
It is to confirm all kinds of failure causes to semiconductor chip failure analysis work, so that Improving The Quality of Products and reliability
Important process.Voltage contrast analysis is the analysis method be commonly used in Integrated circuit failure analysis, and its principle is using electric
Son/ion-beam scanning sample surfaces are charged, and the different structure on sample forms different potentials due to the difference of electric discharge,
Different bright dark contrasts are formed so as to influence the transmitting of secondary electron in turn, can be with complete by the analysis to contrast difference
Into the positioning of defect.
At present, the method for testing of (passive voltabe contrast, abbreviation PVC) has been positioned to passive voltage-contrast
Through being widely applied in the analysis failure of semiconductor, SEM is typically used in voltage-contrast localization method
(scanning electron microscopy, abbreviation SEM) contrasts what is tested to sample voltage, during test
It is that sample surfaces are bombarded by focused ion beam (focused ion beam, abbreviation FIB), and observes focused ion beam reflection
Morphological image brightness determines whether voltage-contrast is faulty in sample.
But PVC still has limitation, such as to CT on AA Chain, isostructural point of High Rc CT Chain
Analysis, passive voltage contrast analysis does not work, it is necessary under the use of the cooperation of SEM and nanometer probe system
This defect can be overcome to test, but nanometer probe system is the solution of a high cost, and for operation
Person needs certain experiences.
Therefore, those skilled in the art, which need badly, provides a kind of sample preparation methods analyzed based on dynamic electric voltage contrast, side
Just efficiently to sample carry out dynamic electric voltage contrast analysis, solve in the prior art using nanometer probe system high cost and
The problem of complex operation.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of sample preparation methods analyzed based on dynamic electric voltage contrast,
Conveniently to sample carry out dynamic electric voltage contrast analysis, solve in the prior art using nanometer probe system high cost with
And the problem of complex operation.
In order to solve the above-mentioned technical problem, the invention provides a kind of sample preparation side analyzed based on dynamic electric voltage contrast
Method, comprises the following steps：
Step S01, offer testing sample, carry out plane lapping, until exposing its test structure to testing sample；
Step S02, testing sample is pasted onto on encapsulation base plate；
Step S03, using bonding wire the Pad of test structure and encapsulation base plate leg are connected；
Step S04, the leg of the encapsulation base plate connect battery by conductive tape, complete to be electrically connected with；
Step S05, testing sample is tested.
It is preferred that, in step S01, plane lapping is carried out to testing sample using chemical mechanical milling tech.
It is preferred that, in step S02, the testing sample is fixed on by the encapsulation base plate using PUR or double faced adhesive tape
On.
It is preferred that, in step S02, the encapsulation base plate is ceramic package base.
It is preferred that, in step S03, the bonding wire is metal material.
It is preferred that, in step S04, the conductive tape is copper adhesive tape or aluminium glue band.
It is preferred that, in step S04, the battery is button cell.
It is preferred that, in step S04, the battery, conductive tape, bonding wire and testing sample are connected in series.
Compared with currently existing scheme, the sample preparation methods analyzed based on dynamic electric voltage contrast that the present invention is provided, relatively
In traditional nanometer probe system, with the low feature of easy to operate, time-consuming extremely short, cost, it can effectively make operation detection side
Formula becomes simple, it is not necessary to which operator has very abundant operating experience to it, using low operation cost, improves the reliable of analysis
Property, accuracy and the efficiency of analysis.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, below by using required in embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for ability
For the those of ordinary skill of domain, on the premise of not paying creative work, it can also be obtained according to these accompanying drawings other attached
Figure.
The schematic flow sheet for the sample preparation methods that Fig. 1 is analyzed for the present invention based on dynamic electric voltage contrast；
The section knot for the sample preparation methods preferred embodiment that Fig. 2 to Fig. 5 is analyzed for the present invention based on dynamic electric voltage contrast
Structure schematic diagram.
Label is described as follows in figure：
10th, testing sample；20th, test structure；30、Pad；40th, encapsulation base plate；50th, bonding wire；60th, leg；70th, battery；
80th, adhered layer；90th, conductive tape.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, the implementation below in conjunction with accompanying drawing to the present invention
Mode is described in further detail.Those skilled in the art can understand the present invention easily as the content disclosed by this specification
Other advantages and effect.The present invention can also be embodied or applied by other different embodiments, this explanation
Every details in book can also based on different viewpoints and application, without departing from the spirit of the present invention carry out various modifications or
Change.
Above and other technical characteristic and beneficial effect, by conjunction with the embodiments and 1 to 5 pair of accompanying drawing it is of the invention based on dynamic
The sample preparation methods of voltage contrast analysis are described in detail.The sample that Fig. 1 is analyzed for the present invention based on dynamic electric voltage contrast
The schematic flow sheet of preparation method；Fig. 2 to Fig. 5 is preferably real based on the sample preparation methods that dynamic electric voltage contrast is analyzed for the present invention
Apply the cross-sectional view of example.
As shown in figure 1, the invention provides a kind of sample preparation methods analyzed based on dynamic electric voltage contrast, it is including following
Step：
Step S01, offer testing sample 10, plane lapping is carried out to the surface of testing sample 10, until exposing its test knot
Structure 20 (as shown in Figure 2)；In this step, plane lapping is preferably carried out to testing sample 10 using chemical mechanical milling tech,
Until exposing its test structure 20.
Step S02, testing sample 10 is pasted onto on encapsulation base plate 40 (as shown in Figure 3)；In this step, using hot melt
The testing sample 10 is fixed on encapsulation base plate 40 by glue, double faced adhesive tape or other adhered layers 80, and the encapsulation base plate 40 is preferred
For ceramic package base.
Step S03, using bonding wire 50 leg 60 of the Pad30 of test structure and encapsulation base plate is connected (such as Fig. 4 institutes
Show)；Wherein, bonding wire 50 is preferably metal material.
Step S04, the leg 60 of the encapsulation base plate connect battery 70 by conductive tape 90, complete to be electrically connected with (such as
Shown in Fig. 5)；In this step, conductive tape 90 preferably copper adhesive tape or aluminium glue band, meanwhile, battery 70 is preferably button cell, with
Reduce the space in SEM.In addition, insulating tape isolation can not can be used at conduction.
Wherein, battery 70, conductive tape 90, bonding wire 50 and testing sample 10 are connected in series.
Step S05, testing sample 10 is tested；In this step, the encapsulation base plate 40 of testing sample 10 will be carried
It is put into SEM or FIB and carries out dynamic electric voltage contrast analysis, positions failpoint.After the test structure of electric connection is powered, in dark space
And the boundary in clear zone is high resistant fault location, detection mode facilitates accurate.
In summary, the sample preparation methods analyzed based on dynamic electric voltage contrast that the present invention is provided, relative to traditional
Nanometer probe system, with the low feature of easy to operate, time-consuming extremely short, cost, can effectively make operation detection mode become letter
Easily, it is not necessary to which operator has very abundant operating experience to it, using low operation cost, the reliability, accurate of analysis is improved
Property and analysis efficiency.
Some preferred embodiments of the present invention have shown and described in described above, but as previously described, it should be understood that the present invention
Be not limited to form disclosed herein, be not to be taken as the exclusion to other embodiment, and available for various other combinations,
Modification and environment, and above-mentioned teaching or the technology or knowledge of association area can be passed through in invention contemplated scope described herein
It is modified., then all should be in this hair and the change and change that those skilled in the art are carried out do not depart from the spirit and scope of the present invention
In the protection domain of bright appended claims.
Claims (8)
1. a kind of sample preparation methods analyzed based on dynamic electric voltage contrast, it is characterised in that comprise the following steps：
Step S01, offer testing sample, carry out plane lapping, until exposing its test structure, the test knot to testing sample
Contain Pad in structure；
Step S02, testing sample is pasted onto on encapsulation base plate, the centre of the encapsulation base plate is groove, to be measured for pasting
Sample, and be vertically-mounted leg on the both sides of groove；
Step S03, using bonding wire the Pad of test structure and encapsulation base plate leg are connected, the leg of the right and left is each
Connect a Pad；
Step S04, the leg of the encapsulation base plate connect battery by conductive tape, complete to be electrically connected with；
Step S05, testing sample is tested, in test process, the positive pole of battery passes through leg and bonding wire connects one
Pad, the negative pole of battery connects another Pad by leg and bonding wire.
2. the sample preparation methods according to claim 1 analyzed based on dynamic electric voltage contrast, it is characterised in that step
In S01, plane lapping is carried out to testing sample using chemical mechanical milling tech.
3. the sample preparation methods according to claim 1 analyzed based on dynamic electric voltage contrast, it is characterised in that step
In S02, the testing sample is fixed on the encapsulation base plate using PUR or double faced adhesive tape.
4. the sample preparation methods according to claim 1 analyzed based on dynamic electric voltage contrast, it is characterised in that step
In S02, the encapsulation base plate is ceramic package base.
5. the sample preparation methods according to claim 1 analyzed based on dynamic electric voltage contrast, it is characterised in that step
In S03, the bonding wire is metal material.
6. the sample preparation methods according to claim 1 analyzed based on dynamic electric voltage contrast, it is characterised in that step
In S04, the conductive tape is copper adhesive tape or aluminium glue band.
7. the sample preparation methods according to claim 1 analyzed based on dynamic electric voltage contrast, it is characterised in that step
In S04, the battery is button cell.
8. the sample preparation methods according to claim 1 analyzed based on dynamic electric voltage contrast, it is characterised in that step
In S04, the battery, conductive tape, bonding wire and testing sample are connected in series.
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| CN116242683B (en) * | 2023-03-31 | 2024-06-11 | 胜科纳米(苏州)股份有限公司 | Preparation method of plane transmission electron microscope sample and plane transmission electron microscope sample |
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| CN102403242A (en) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Method for protecting chip to be detected from damage during re-bonding |
| CN102446901A (en) * | 2010-10-14 | 2012-05-09 | 中芯国际集成电路制造(上海)有限公司 | Failure analysis structure, formation method of failure analysis structure and failure analysis method |
| CN202471879U (en) * | 2012-02-17 | 2012-10-03 | 四川大雁微电子有限公司 | Circuit for detecting undesirable characteristics of paster packaging semiconductor component |
| CN103839771A (en) * | 2012-11-23 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device failure analysis sample production method and analysis method |
| CN103887150A (en) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | Method for preparing test sample |
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| JP3768442B2 (en) * | 2001-12-28 | 2006-04-19 | オルガノ株式会社 | Analytical sample preparation method and element quantification method |
| JP2010044999A (en) * | 2008-08-18 | 2010-02-25 | Hitachi High-Technologies Corp | Sample holder and sample analyzer using the same |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403242A (en) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Method for protecting chip to be detected from damage during re-bonding |
| CN102446901A (en) * | 2010-10-14 | 2012-05-09 | 中芯国际集成电路制造(上海)有限公司 | Failure analysis structure, formation method of failure analysis structure and failure analysis method |
| CN202471879U (en) * | 2012-02-17 | 2012-10-03 | 四川大雁微电子有限公司 | Circuit for detecting undesirable characteristics of paster packaging semiconductor component |
| CN103839771A (en) * | 2012-11-23 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device failure analysis sample production method and analysis method |
| CN103887150A (en) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | Method for preparing test sample |
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