CN104894639A - Method for in-situ growth of material based on grapheme field-effect tube micro-area heating - Google Patents
Method for in-situ growth of material based on grapheme field-effect tube micro-area heating Download PDFInfo
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Abstract
The invention discloses a method for in-situ growth of a material based on grapheme field-effect tube micro-area heating. The method comprises the following steps: firstly, preparing a field-effect tube based on grapheme, wherein grapheme has a narrow side micro-area structure, and a back gate is arranged on the back of the field-effect tube; secondly, adding a voltage source or a current source between the electrodes at the two ends of grapheme, and modulating the resistance of the narrow side micro-area structure by adjusting the voltage of the back gate, so that the temperature of the narrow side micro-area structure is high; thirdly, switching on a reaction source, and adjusting the voltage of the back gate, so that grapheme is heated to the temperature needed for material growth to achieve the in-situ growth of the material heated in the micro area of grapheme. The method is simple to operate, and can achieve the in-situ growth of a semiconducting material on the premise of high-temperature heating of micro areas of different sizes, and the material growth area shape is controllable. Besides, the preparation method of the material heated in the micro area and growing in situ is simple, and is compatible with the conventional MOS process, large-scale arrayed and graphical preparation is facilitated, and the homogeneity is high.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly relate to a kind of method and device architecture of the in-situ growth material based on the heating of graphene field effect pipe microcell.
Background technology
Since Graphene comes out, be found to have the physical property of the uniqueness not available for other carbon family member, as unusual integer quantum Hall effect, the limited conductance of intrinsic Graphene, and pervasive photoconduction etc.Utilize the physical property that these are interesting, scientific research personnel to the application of the electric property of Graphene having been done large quantifier elimination, as photoelectric device, RF transistors, logical switch and memory device etc., and to its electrocaloric effect and applied research less.
Novel semiconductor material such as the materials such as ZnO, AlN, GaN for microelectronic device, opto-electronic device adopt MOCVD usually, pulsed laser deposition, higher temperature is all needed time prepared by the means such as magnetron sputtering, and conventional heating means carry out heater block based on optics, comprise LASER HEATING or electron beam heating.The laser that so-called LASER HEATING utilizes continuous wave laser to produce, producing high temperature beam exposure parts to be heated through focusing on, making parts local surfaces reach temperature required instantaneously.And the electronics that electron beam adds the motion of thermal utilization high temperature bombards the surface of parts to be heated, make very high kinetic energy change rapidly heat energy into, thus make parts local bring up to rapidly required temperature.But the instrument that these heating means use is huge, operation is also complicated, and the size of hot spot often can make the size of heating region uncontrollable.
Therefore the application proposes a kind of method that microcell heating arrangement original position based on graphene field effect pipe prepares thin-film material.Device architecture prepared by the method is thin-film material-metal electrode-Graphene-substrate, utilizes adjustment back gate voltage to realize Graphene and heats the temperature reached needed for differing materials growth, thus realize the growth in situ of material on Graphene.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of method of the in-situ growth material based on the heating of graphene field effect pipe microcell, carrying out the problems such as heating steps time prepared by material is complicated, heating region is uncontrollable for solving in prior art.
For achieving the above object and other relevant objects, the invention provides a kind of method of the in-situ materials growth based on the heating of graphene field effect pipe microcell, described method at least comprises step:
1) preparation is based on the field effect transistor of Graphene, and described Graphene has narrow limit domain structure, and the back side of described field effect transistor is provided with backgate;
2) between the electrode at described Graphene two ends, power up potential source or current source, by the resistance regulating back gate voltage to modulate described narrow limit domain structure, make described narrow limit domain structure produce high temperature;
3) at described narrow limit domain structure surface in situ growth material layer.
Alternatively, described step 1) in preparation at least comprise based on the step of the field effect transistor of Graphene:
One target substrate 1-1) is provided;
1-2) Graphene of preparation is transferred to the surface of described target substrate;
1-3) spin coating first photoresist material and the second photoresist material successively on described Graphene, after exposure imaging is carried out to described first photoresist material, develop to expose graphenic surface to described second photoresist material, described first photoresist material and the second photoresist material form T-type structure, the graphenic surface depositing metal layers exposed, forms electrode;
1-4) adopt the graphical described Graphene of electron beam exposure technique, and etch described Graphene by oxide etch technique, thus form the graphene film with narrow limit domain structure.
1-5) form backgate at the backside deposition metal level of described target substrate.
Alternatively, described step 1-2) in prepare Graphene step be:
One growth substrates 1-2-1) is provided, polished finish is carried out to described growth substrates, and described growth substrates is cleaned;
1-2-2) described growth substrates is placed in reaction chamber, after described reaction chamber is vacuumized, passes into H
2gas is also warming up to certain temperature, then carries out plasma body pre-treatment to described growth substrates;
1-2-3) keep passing into H
2gas also passes into CH
4, using plasma strengthens chemical Vapor deposition process in described growth substrates surface growth graphene film.
Alternatively, the hyperthermia temperature range that described narrow limit domain structure produces is 100 ~ 1200 DEG C.
Alternatively, the size of described narrow limit domain structure is set to 50 ~ 200nm.
Described Graphene is rule and the figure of symmetry alternatively.
Alternatively, the graphics shape of described Graphene is snake type, dumbbell shape or hollow type.
Alternatively, the range of current applied at described Graphene two ends is I, 0 < I≤0.2mA.
Alternatively, described material layer is semiconductor material layer, and described semiconductor material layer is ZnO, GaN, AlN, SnO
2, AZO, MoS
2, WS, GaS, GaP, ZnS, InAs, GaSb, CdSe, TiO
2, one in PbS, CdS.
The present invention also provides a kind of device architecture utilizing aforesaid method to obtain, and described device architecture at least comprises:
Based on the field effect transistor of Graphene, described Graphene has narrow limit domain structure;
Backgate, is arranged on the back side of described field effect transistor;
Material layer, growth in situ is on described narrow limit domain structure surface.
Alternatively, the structure of the described field effect transistor based on Graphene comprises: target substrate, be made in described target substrate and have the Graphene of narrow limit domain structure, the electrode be arranged on surface, described Graphene two ends.
Alternatively, the size of described narrow limit domain structure is set to 50 ~ 200nm.
Alternatively, described Graphene is rule and the figure of symmetry.
Alternatively, the graphics shape of described Graphene is snake type, dumbbell shape or hollow type.
Alternatively, described narrow limit domain structure is array pattern, and on the domain structure of described narrow limit, the pattern of the material layer of growth in situ is consistent with the pattern of described narrow limit domain structure, is also array pattern.
As mentioned above, the method of the in-situ materials growth based on the heating of graphene field effect pipe microcell of the present invention, comprises the following steps: first, prepares the field effect transistor based on Graphene, described Graphene has narrow limit domain structure, and the back side of described field effect transistor is provided with backgate; Then, between the electrode at described Graphene two ends, power up potential source or current source, by the resistance regulating back gate voltage to modulate described narrow limit domain structure, make described narrow limit domain structure produce high temperature; Next, pass into reaction source, regulate back gate voltage, Graphene is heated to Material growth needs temperature, realizes the in-situ materials growth of Graphene microcell heating, the microcell based on graphene field effect pipe of the present invention heating in-situ growth material method, simple to operate, under can realizing the prerequisite based on the microcell heat of different size, growth in situ semiconductor material, Material growth region shape is controlled.In addition, the preparation method of microcell heating in-situ growth material is simple, with existing MOS process compatible, is convenient to large scale array and graphically prepares, good uniformity.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the method for the in-situ growth material that the present invention is based on the heating of graphene field effect pipe microcell.
Fig. 2 is the structure sectional view before etching Graphene in the method for the in-situ growth material that the present invention is based on the heating of graphene field effect pipe microcell.
Fig. 3 is the structural perspective before etching Graphene in the method for the in-situ growth material that the present invention is based on the heating of graphene field effect pipe microcell.
Fig. 4 a is that in device architecture of the present invention, Graphene is the vertical view of dumbbell structure.
Fig. 4 b is the structure vertical view after the structure of Fig. 4 carries out electrified regulation.
Fig. 5 a is that in device architecture of the present invention, Graphene is the vertical view of cirque structure.
Fig. 5 b is the vertical view of the Graphene side of being ring structure in device architecture of the present invention.
Fig. 6 is that in device architecture of the present invention, Graphene is the vertical view of serpentine configuration.
Fig. 7 a is that in device architecture of the present invention, Graphene is the vertical view of a kind " order " font structure.
Fig. 7 b is that in device architecture of the present invention, Graphene is the vertical view of another kind " order " font structure.
Fig. 8 is the device architecture schematic diagram based on the heating of graphene field effect pipe microcell.
Element numbers explanation
S1 ~ S2 step
1 substrate
2 Graphenes
21 narrow limit domain structures
3 electrodes
4 backgates
5 material layers
Embodiment
Below by way of specific specific examples, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification sheets can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification sheets also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to accompanying drawing.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Embodiment one
The invention provides a kind of method of the in-situ growth material based on the heating of graphene field effect pipe microcell, as shown in Figure 1, described method at least comprises step:
S1, prepares the field effect transistor based on Graphene, and described Graphene has narrow limit domain structure, and the back side of described field effect transistor is provided with backgate;
S2, powers up potential source or current source between the electrode at described Graphene two ends, by the resistance regulating back gate voltage to modulate described narrow limit domain structure, makes described narrow limit domain structure produce high temperature;
S3, at described narrow limit domain structure surface in situ growth material layer.
The method of the in-situ growth material based on the heating of graphene field effect pipe microcell of the present invention is described in detail below in conjunction with accompanying drawing.
First perform step S1, prepare the field effect transistor based on Graphene, described Graphene has narrow limit domain structure, and the back side of described field effect transistor is provided with backgate.
Particularly, the process prepared based on the field effect transistor of Graphene is:
First prepare Graphene: the first step, the growth substrates of growing graphene is provided, polished finish is carried out to described growth substrates, and adopts cleaning solution dilute hydrochloric acid, Virahol, deionized water to rinse described growth substrates successively respectively to growth substrates, then dry up.Described growth substrates can be Cu, Ni, Pt, SiO
2one wherein, in the present embodiment, for Cu substrate.Second step, is placed in chemical vapour deposition reaction chamber by described growth substrates, passes into H after vacuumizing to described reaction chamber
2gas is also warming up to certain temperature, then carries out the pre-treatment of H plasma body to described growth substrates.3rd step, keeps passing into H
2gas also passes into growth gasses CH
4, using plasma strengthens chemical Vapor deposition process in described growth substrates surface growth graphene film.
After preparing Graphene, refer to accompanying drawing 2 and Fig. 3, transferred to by Graphene 2 in target substrate 1, described target substrate 1 can be insulating substrate, also can be flexible substrate.In the present embodiment, described target substrate 1 is insulating substrate, and such as, silicon-dioxide on silicon substrate, described Graphene 2 is transferred on the silicon-dioxide on silicon substrate.
After in Graphene 2 to the target substrate 1 of transfer preparation, electrode is formed at described Graphene 2 two ends, detailed process comprises: on described metal level, form the first photoresist material PMGI, form the second photoresist material PMMA495 more on a photoresist, then electron beam exposure is carried out to described second photoresist material PMMA and it is developed, again T-shaped (under-cut) structure is formed to PMGI development, again with this structure for mask, adopt the Graphene 2 surface deposition metal level of electron beam evaporation process between photoresist material, thus form electrode 3 in described Graphene both sides, be respectively source electrode and drain electrode, described electrode can be Ti or Au.So far, the structure of field effect transistor as shown in Figures 2 and 3.
After forming electrode 3, adopt electron beam lithography to carry out graphically described Graphene 2, and by Graphene 2 described in oxide etch technique, make between electrode 3, form the Graphene 2 with narrow limit domain structure.
In an embodiment of the present invention, the gas that described oxide etch technique adopts is Ar and O
2mixture.The parameter area of described oxide etch technique is: Ar and O
2gas flow ratio within the scope of 1:5 ~ 1:9, the pressure of etching cavity is the power of 4 ~ 7Pa etching cavity is 50 ~ 100W, and the treatment time is 1 ~ 3min.After oxide etch technique completes, obtain the Graphene with specified shape.
The shape prioritizing selection of described Graphene 2 is rule and the figure of symmetry, such as, can be dumbbell shape, snake type or hollow type etc., not limit at this.Wherein, as shown in fig. 4 a, the Graphene 2 of this shape is comparatively large near the size of two end electrodes 3, and center size is less, and therefore in this figure, central zone is narrow limit domain structure 21 for the pattern of dumbbell shape Graphene 2.As shown in Figure 6, between electrode, the whole pattern of snake type Graphene 2 is narrow limit domain structure 21 to the pattern of snake type Graphene.Hollow type Graphene refers in the middle of Graphene has hollow out shape, such as, the Graphene of shape shown in Fig. 5 a, the black part in figure is divided into narrow limit domain structure 21; Graphene shape as shown in Figure 5 b again, the black part in figure is divided into narrow limit domain structure 21; For another example Fig. 7 a and 7b, wherein, the graphene pattern in Fig. 7 b is the distortion of graphene pattern in Fig. 7 a, and in two figure, narrow limit domain structure 21 is the Graphene striped that central cross is arranged.
Certainly, the above-mentioned shape just exemplifying narrow limit domain structure 21 in Graphene 2 structure and Graphene 2 structure, but be not limited to this.
It should be noted that, the preparation of the described field effect transistor based on Graphene is also included in back side manufacture backgate 4 electrode of described target substrate 1 and the step of scene effect tube-surface deposition dielectric.
Then perform step S2, between the electrode at described Graphene 2 two ends, power up potential source or current source, by the resistance regulating backgate 4 voltage to modulate described narrow limit domain structure 21, make the generation high temperature of described narrow limit domain structure 21.
In the present embodiment, consider the current density of Graphene, preferably, between the electrode 3 at described Graphene 2 two ends, add current source.Back gate voltage is applied between the electrode (ground connection) of backgate 4 and Graphene 2 wherein one end.Because narrow limit domain structure 21 is little compared with the scantlings of the structure in other regions of Graphene 2, after backgate modulation, the resistance change of narrow limit domain structure is large, the heat that making alive after-current is produced by described narrow limit domain structure 21 and surrounding widely different, namely Heating temperature is very high, improves controllability.For the Graphene 2 of dumbbell shape in Fig. 4 b, in Graphene, central zone is narrow limit domain structure 21, and after application of a voltage, this narrow limit domain structure 21 generates heat.
The resistance change produced to prevent described narrow limit domain structure 21 is too large, and generally, the size of the narrow limit domain structure 21 of setting should not be too large; On the other hand, for preventing described narrow limit domain structure 21 from causing fracture because heat is high, its size should be not too small yet.Preferably, the size of described narrow limit domain structure 21 is arranged within the scope of 50 ~ 200nm.In the present embodiment, the size of described narrow limit domain structure 21 is set to 100nm.Certainly, in other embodiments, the size of described narrow limit domain structure 21 can be set to 50nm, 80nm, 150 or 180nm.Refer to Fig. 4 b, after the electrode at dumbbell shape Graphene two ends applies voltage, narrow limit domain structure 21 (in the figure filled black region) heating of Graphene 2 central zone.
The height of narrow limit domain structure 21 Heating temperature is relevant with back gate voltage size, by regulating back gate voltage, can realize the heating of narrow limit domain structure 21 differing temps.Preferably, the range of current that described Graphene 2 two ends apply is I, 0 < I≤0.2mA, and the temperature range of described narrow limit domain structure 21 heating is within the scope of 100 ~ 1200 DEG C.It should be noted that, different Graphene 2 structures, applies the voltage of equal size, and the temperature that its narrow limit domain structure 21 heats can be different.
In addition, under various circumstances, the temperature of narrow limit domain structure 21 heating also can be different, when test environment is vacuum, by melting the different metal of graphenic surface, the narrow limit domain structure that can record Graphene in vacuum can heating temperature range be 100 ~ 1200 DEG C.When test environment is air, generated the temperature of carbonic acid gas by Graphene and oxygen reaction, obtaining the narrow limit heatable temperature of domain structure in air is 100 ~ 500 DEG C.
Finally perform step S3, refer to accompanying drawing 8, at described narrow limit domain structure surface in situ growth material layer 5.
The material type selecting described material layer is needed according to technique.In the present embodiment, described material layer is chosen as semiconductor material layer.Described semiconductor material layer is ZnO, GaN, AlN, SnO
2, AZO MoS
2, WS, GaS, GaP, ZnS, InAs, GaSb, CdSe, TiO
2, PbS, CdS etc. wherein a kind of.Be described for growth in situ GaN semiconductor material layer below.
The structure that step S2 obtains is placed in vacuum cavity, regulates back gate voltage, the temperature of Graphene microcell heating arrangement is reached between the temperature 1100 DEG C ~ 1200 DEG C of GaN material growth, in chamber, passes into reaction source NH subsequently
3with Ga steam, wherein, NH
3flow be 20 ~ 100sccm, keep air pressure between 0.1Pa ~ 10Pa, the position of the Ga steam passed into as far as possible near Graphene heating zone, NH
3gaN and H will be generated in the surface reaction of Graphene microcell heating arrangement with Ga steam
2, H
2for gas is overflowed from surface, the face that GaN is then attached to narrow limit domain structure table forms required GaN semiconductor material layer, and graphenic surface is not then had GaN by the place of heating and generates.
The principle preparing material layer by carrying out microcell heating based on the field effect transistor of Graphene is: by regulating back gate voltage, the Fermi surface of Graphene can be regulated, change Graphene resistance, because electronics easily scattering effect occurs at the edge of narrow limit domain structure, voltage to the modulation of Graphene narrow limit resistance obviously, thus utilizes the heat of Graphene narrow limit domain structure to prepare the material layer needing high growth temperature.Therefore, by regulating voltage and different Graphene microcell heating arrangements can be adopted, realize the needs of differing materials growth to temperature range.Method in addition based on the in-situ growth material of the microcell heating arrangement of graphene field effect pipe passes through the graphical etching controlling Graphene, realize GaN material growth in situ and shape controlling, simultaneously can on the microcell heating arrangement basis of the graphene field effect pipe of preparation array, prepare large batch of, uniformly, patterned semiconductor material.
Embodiment two
The present invention also provides a kind of device architecture utilizing the method in embodiment one to obtain, and as shown in Figure 8, described device architecture at least comprises:
Based on the field effect transistor of Graphene 2, described Graphene 2 has narrow limit domain structure;
Backgate 4, is arranged on the back side of described field effect transistor;
Material layer 5, growth in situ is on described narrow limit domain structure surface.
Particularly, as shown in Fig. 4 a ~ 7b, the structure of the described field effect transistor based on Graphene comprises: target substrate 1, be made in described target substrate 1 and have the Graphene 2 of narrow limit domain structure 21, the electrode 3 be arranged on surface, described Graphene 2 two ends.
Further, the structure of the described field effect transistor based on Graphene also comprises the dielectric (diagram) being positioned at a field effect transistor surface isolation action.
Described narrow limit domain structure 21 refers to the structure that in Graphene, size is less, and its size is arranged within the scope of 50 ~ 200nm.In the present embodiment, the size of described narrow limit domain structure 21 can elect 100nm as temporarily.Certainly, in other embodiments, the size of narrow limit domain structure 21 can also be 50nm, 80nm, 150nm or 180nm.
The shape prioritizing selection of described Graphene 2 is rule and the figure of symmetry, such as, can be dumbbell shape, ring-like, snake type or class " order " font etc., not limit at this.Wherein, as shown in fig. 4 a, the Graphene 2 of this shape is comparatively large near the size of two end electrodes 3, and center size is less, and therefore in this figure, central zone is narrow limit domain structure 21 for the pattern of dumbbell shape Graphene 2.As shown in Figure 6, between electrode, the whole pattern of snake type Graphene 2 is narrow limit domain structure 21 to the pattern of snake type Graphene.Hollow type Graphene refers in the middle of Graphene has hollow out shape, such as, the Graphene of shape shown in Fig. 5 a, the black part in figure is divided into narrow limit domain structure 21; Graphene shape as shown in Figure 5 b again, the black part in figure is divided into narrow limit domain structure 21; For another example Fig. 7 a and 7b, wherein, the graphene pattern in Fig. 7 b is the distortion of graphene pattern in Fig. 7 a, and in two figure, narrow limit domain structure 21 is the Graphene striped that central cross is arranged.
In the present embodiment, described material layer is chosen as semiconductor material layer.Described semiconductor material layer is ZnO, GaN, AlN, SnO
2, AZO MoS
2, WS, GaS, GaP, ZnS, InAs, GaSb etc. wherein a kind of.In the present embodiment, the semiconductor material layer of growth is preferably GaN material.
Exemplarily, described narrow limit domain structure is array pattern, and on the domain structure of described narrow limit, the pattern of the material layer of growth in situ is consistent with the pattern of described narrow limit domain structure, is also array pattern.
Certainly, the above-mentioned shape just exemplifying narrow limit domain structure in graphene-structured and graphene-structured, but be not limited to this.Different Graphenes narrow limit domain structure can grow the material layer of different graphic, thus realizes the graphical of in-situ growth material.
The method of the in-situ materials growth based on the heating of graphene field effect pipe microcell of the present invention, comprise step: first, prepare the field effect transistor based on Graphene, described Graphene has narrow limit domain structure, and the back side of described field effect transistor is provided with backgate; Then, between the electrode at described Graphene two ends, power up potential source or current source, by the resistance regulating back gate voltage to modulate described narrow limit domain structure, make described narrow limit domain structure produce high temperature; Then, pass into reaction source, regulate back gate voltage, Graphene is heated to Material growth needs temperature, realizes the in-situ materials growth of Graphene microcell heating, the microcell based on graphene field effect pipe of the present invention heating in-situ growth material method, simple to operate, under can realizing the prerequisite based on the microcell heat of different size, growth in situ semiconductor material, Material growth region shape is controlled.In addition, the preparation method of microcell heating in-situ growth material is simple, with existing MOS process compatible, is convenient to large scale array and graphically prepares, good uniformity.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (15)
1., based on a method for the in-situ growth material of graphene field effect pipe microcell heating, it is characterized in that, described method at least comprises step:
1) preparation is based on the field effect transistor of Graphene, and described Graphene has narrow limit domain structure, and the back side of described field effect transistor is provided with backgate;
2) between the electrode at described Graphene two ends, power up potential source or current source, by the resistance regulating back gate voltage to modulate described narrow limit domain structure, make described narrow limit domain structure produce high temperature;
3) at described narrow limit domain structure surface in situ growth material layer.
2. the method for in-situ growth material based on the heating of graphene field effect pipe microcell according to claim 1, is characterized in that: described step 1) in preparation at least comprise based on the step of the field effect transistor of Graphene:
One target substrate 1-1) is provided;
1-2) Graphene of preparation is transferred to the surface of described target substrate;
1-3) spin coating first photoresist material and the second photoresist material successively on described Graphene, after exposure imaging is carried out to described first photoresist material, develop to expose graphenic surface to described second photoresist material, described first photoresist material and the second photoresist material form T-type structure, the graphenic surface depositing metal layers exposed, forms electrode;
1-4) adopt the graphical described Graphene of electron beam exposure technique, and etch described Graphene by oxide etch technique, thus form the graphene film with narrow limit domain structure.
1-5) form backgate at the backside deposition metal level of described target substrate.
3. the method for in-situ growth material based on the heating of graphene field effect pipe microcell according to claim 2, is characterized in that: described step 1-2) in prepare Graphene step be:
One growth substrates 1-2-1) is provided, polished finish is carried out to described growth substrates, and described growth substrates is cleaned;
1-2-2) described growth substrates is placed in reaction chamber, after described reaction chamber is vacuumized, passes into H
2gas is also warming up to certain temperature, then carries out plasma body pre-treatment to described growth substrates;
1-2-3) keep passing into H
2gas also passes into CH
4, using plasma strengthens chemical Vapor deposition process in described growth substrates surface growth graphene film.
4. the method for the in-situ growth material based on the heating of graphene field effect pipe microcell according to claim 1, is characterized in that: the hyperthermia temperature range that described narrow limit domain structure produces is 100 ~ 1200 DEG C.
5. the method for the in-situ growth material based on the heating of graphene field effect pipe microcell according to claim 1, is characterized in that: the size of described narrow limit domain structure is set to 50 ~ 200nm.
6. the method for the in-situ growth material based on the heating of graphene field effect pipe microcell according to claim 1, is characterized in that: described Graphene is rule and the figure of symmetry.
7. the method for the in-situ growth material based on the heating of graphene field effect pipe microcell according to claim 6, is characterized in that: the graphics shape of described Graphene is snake type, dumbbell shape or hollow type.
8. the method for the in-situ growth material based on the heating of graphene field effect pipe microcell according to claim 1, is characterized in that: the range of current applied at described Graphene two ends is I, 0 < I≤0.2mA.
9. the method for the in-situ growth material based on the heating of graphene field effect pipe microcell according to claim 1, it is characterized in that: described material layer is semiconductor material layer, described semiconductor material layer is ZnO, GaN, AlN, SnO
2, AZO, MoS
2, WS, GaS, GaP, ZnS, InAs, GaSb, CdSe, TiO
2, one in PbS, CdS.
10. utilize the device architecture that method described in any one of claim 1 ~ 9 obtains, it is characterized in that, described device architecture at least comprises:
Based on the field effect transistor of Graphene, described Graphene has narrow limit domain structure;
Backgate, is arranged on the back side of described field effect transistor;
Material layer, growth in situ is on described narrow limit domain structure surface.
11. device architectures according to claim 10, is characterized in that: the structure of the described field effect transistor based on Graphene comprises: target substrate, be made in described target substrate and have the Graphene of narrow limit domain structure, the electrode be arranged on surface, described Graphene two ends.
12. device architectures according to claim 10, is characterized in that: the size of described narrow limit domain structure is set to 50 ~ 200nm.
13. device architectures according to claim 10, is characterized in that: described Graphene is rule and the figure of symmetry.
14. device architectures according to claim 11, is characterized in that: the graphics shape of described Graphene is snake type, dumbbell shape or hollow type.
15. device architectures according to any one of claim 10 ~ 14, it is characterized in that: described narrow limit domain structure is array pattern, on the domain structure of described narrow limit, the pattern of the material layer of growth in situ is consistent with the pattern of described narrow limit domain structure, is also array pattern.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108070903A (en) * | 2016-11-16 | 2018-05-25 | 北京大学 | A kind of device that regulation and control thin-film material growth is powered up to substrate |
| CN108646793A (en) * | 2018-04-04 | 2018-10-12 | 山西大学 | A kind of device and method of two-dimensional material three dimensional stress pattern control |
| CN115274889A (en) * | 2022-06-17 | 2022-11-01 | 中国科学院半导体研究所 | Graphene device, preparation method thereof and photoelectric detector |
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| CN108070903A (en) * | 2016-11-16 | 2018-05-25 | 北京大学 | A kind of device that regulation and control thin-film material growth is powered up to substrate |
| CN108646793A (en) * | 2018-04-04 | 2018-10-12 | 山西大学 | A kind of device and method of two-dimensional material three dimensional stress pattern control |
| CN108646793B (en) * | 2018-04-04 | 2020-12-25 | 山西大学 | Device and method for controlling three-dimensional shape of two-dimensional material |
| CN115274889A (en) * | 2022-06-17 | 2022-11-01 | 中国科学院半导体研究所 | Graphene device, preparation method thereof and photoelectric detector |
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