CN104882517A - Method for manufacturing LED chip of vertical structure - Google Patents
Method for manufacturing LED chip of vertical structure Download PDFInfo
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- CN104882517A CN104882517A CN201510145435.XA CN201510145435A CN104882517A CN 104882517 A CN104882517 A CN 104882517A CN 201510145435 A CN201510145435 A CN 201510145435A CN 104882517 A CN104882517 A CN 104882517A
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000002346 layers by function Substances 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 41
- 229910002601 GaN Inorganic materials 0.000 claims description 34
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 206010040844 Skin exfoliation Diseases 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 230000035618 desquamation Effects 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 230000006872 improvement Effects 0.000 abstract description 2
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 239000010931 gold Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 208000032170 Congenital Abnormalities Diseases 0.000 description 1
- 206010010356 Congenital anomaly Diseases 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
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- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a method for manufacturing an LED chip of vertical structure. The method comprises the steps of providing a front-end structure composed of a first substrate and a functional layer formed on the front of the first substrate; providing a second substrate which is bonded with the front-end structure through the functional layer; and illuminating the front-end structure by using a laser beam with a light spot of less than or equal to 150<mu>m so as to lift the first substrate off. As the adopted light spot is relatively small, damage to the front-end structure in the lift-off is reduced, and thus the improvement in the yield of the prepared LED chip of vertical structure can be facilitated. In addition, the alignment limitation of a scribe line in the lift-off is eliminated, and the operability of the laser lift-off process is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of manufacture method of light emitting diode (LED) chip with vertical structure.
Background technology
As everyone knows, because Sapphire Substrate is non-conductive, the restriction of heat conduction rate variance, there is the birth defects such as CURRENT DISTRIBUTION is uneven, poor radiation in traditional formal dress structure LED chip.In order to overcome these deficiencies of formal dress structure LED chip, in the industry all at active development vertical structure LED (hereinafter referred to as V-LED).V-LED adopts high conductivity, dispel the heat good Si or metal substrate, thus substrate heat conduction is good, and PN junction heat dissipation problem is resolved, and large scale power-type chip is achieved.
V-LED is as the study hotspot of luminous semiconductor device, through exploitation for many years, the technology of preparing of current comparative maturity is substrate transfer technology: first use metal to melt crystal technique altogether by bonded substrate bonding excellent to the epitaxial wafer of Sapphire Substrate and conduction, heat conductivility, the feature that recycling sapphire is different from the energy gap of gallium nitride, select the laser of specific wavelength, make with sapphire contact face near gallium nitride decompose, reach the object original Sapphire Substrate peeled off, epitaxial loayer is transferred in thermal conductivity and the well good bonded substrate of conductivity.
Sapphire Substrate common is at present peeled off and is adopted following principle: gallium nitride absorbs energy under laser irradiates, and is decomposed into gallium and nitrogen, thus Sapphire Substrate is separated with gallium nitride layer.The moment be separated, the nitrogen abrupt release of generation, produces gas shock, and simultaneously due to the equal reason of thermal expansion factor between the HTHP that must experience during wafer bonding in early stage and each material, a large amount of stress accumulated in wafer also can discharge at this moment.Can produce severe Micro influence to epitaxy of gallium nitride Rotating fields and performance, cause serious drain, this is also the reason that the current V-LED overall yield of restriction is difficult to promote.
As shown in Figure 1, in order to reduce the impact of gas shock and Stress Release as far as possible, current a kind of preferred approach is adopt hot spot 2 area to irradiate slightly larger than the laser of the unit of in wafer (die) 1, and each hot spot 2 is overlapped, to reduce the impact on epitaxial layer of gallium nitride as much as possible at Cutting Road 3.But the operation of this method is also inconvenient, and along with the variation of LED structure, size also varied, cause the limitation of this method increasing, be difficult to meet Production requirement.
Summary of the invention
The object of the invention is to, provide a kind of manufacture method of light emitting diode (LED) chip with vertical structure, it is more convenient to make when removing substrate, reduces the impact on chip performance simultaneously.
For solving the problems of the technologies described above, the invention provides a kind of manufacture method of light emitting diode (LED) chip with vertical structure, comprising:
There is provided front-end architecture, described front-end architecture comprises the first substrate, is formed at the functional layer in described first substrate face;
There is provided the second substrate, by described functional layer and described front-end architecture phase bonding;
Adopt hot spot to be less than or equal to 150 μm of square laser beams to irradiate described front-end architecture, to peel off described first substrate.
Optionally, for the manufacture method of described light emitting diode (LED) chip with vertical structure, the wavelength of described laser beam is less than or equal to 355nm.
Optionally, for the manufacture method of described light emitting diode (LED) chip with vertical structure, the uniformity of described hot spot is less than or equal to 5%.
Optionally, for the manufacture method of described light emitting diode (LED) chip with vertical structure, described functional layer comprises and stacks gradually the undoped gallium nitride layer be formed in described first substrate face, n type gallium nitride layer, quantum well layer, P type gallium nitride layer, current extending, speculum and metal bonding layer.
Optionally, for the manufacture method of described light emitting diode (LED) chip with vertical structure, described second substrate is by metal bonding layer and described front-end architecture phase bonding.
Optionally, for the manufacture method of described light emitting diode (LED) chip with vertical structure, after the second substrate bonding, before stripping first substrate, also comprise:
Described first substrate back is polished to smooth no marking.
Optionally, for the manufacture method of described light emitting diode (LED) chip with vertical structure, after stripping first substrate, also comprise:
The gallium produced after removing the first substrate desquamation;
Etching undoped gallium nitride layer, exposes n type gallium nitride layer;
Surface coarsening process is carried out to the n type gallium nitride layer exposed;
Form N electrode, and evaporation passivation layer.
In the manufacture method of light emitting diode (LED) chip with vertical structure provided by the invention, the front-end architecture comprising the first substrate is provided, after front-end architecture and the second substrate bonding, adopt hot spot to be less than or equal to 150 μm of square laser beams and described front-end architecture is irradiated, to peel off described first substrate.Compared to existing technology, because the hot spot adopted is less, reduce the damage to front-end architecture in stripping process, thus be conducive to the yield promoting obtained light emitting diode (LED) chip with vertical structure.In addition, the restriction of aiming at Cutting Road when also eliminating stripping, improves the operability of laser lift-off.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of light emitting diode (LED) chip with vertical structure of the prior art when substrate desquamation;
Fig. 2 is the flow chart of the manufacture method of light emitting diode (LED) chip with vertical structure in the embodiment of the present invention;
Fig. 3-Fig. 8 is the schematic diagram of device architecture in the process of the manufacture method of light emitting diode (LED) chip with vertical structure in the embodiment of the present invention.
Embodiment
Be described in more detail below in conjunction with the manufacture method of schematic diagram to light emitting diode (LED) chip with vertical structure of the present invention, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer, such as, according to regarding system or the restriction about business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Core concept of the present invention is, provides a kind of manufacture method of light emitting diode (LED) chip with vertical structure, comprising:
Step S101, provides front-end architecture, and described front-end architecture comprises the first substrate, is formed at the functional layer in described first substrate face;
Step S102, provides the second substrate, by described functional layer and described front-end architecture phase bonding;
Step S103, adopts hot spot to be less than or equal to 150 μm of square laser beams and irradiates described front-end architecture, to peel off described first substrate.
Below enumerate the preferred embodiment of the manufacture method of described light emitting diode (LED) chip with vertical structure, to clearly demonstrate content of the present invention, will be clear that, content of the present invention is not restricted to following examples, and other improvement by the routine techniques means of those of ordinary skill in the art are also within thought range of the present invention.
Please refer to Fig. 2, and composition graphs 3-Fig. 8, wherein Fig. 2 is the flow chart of the manufacture method of light emitting diode (LED) chip with vertical structure in the embodiment of the present invention; Fig. 3 ~ Fig. 8 is the schematic diagram of device architecture in the process of the manufacture method of light emitting diode (LED) chip with vertical structure in the embodiment of the present invention.
As shown in Figure 2, the manufacture method of described light emitting diode (LED) chip with vertical structure comprises:
First, please refer to Fig. 3, perform step S101, provide front-end architecture, described front-end architecture comprises the first substrate 10, is formed at the functional layer 11 on described first substrate 10 front; Preferably, the first substrate 10 can be chosen as Sapphire Substrate, silicon substrate, silicon-carbon substrate or patterned substrate, adopt Sapphire Substrate in the present embodiment.Functional layer 11 comprises the undoped gallium nitride layer (U-GaN) 110, n type gallium nitride layer (N-GaN) 111, quantum well layer (MQW) 112, P type gallium nitride layer (P-GaN) 113, current extending 114, speculum 115 and the metal bonding layer 116 that are formed at successively on the first substrate 10 front.Concrete, described undoped gallium nitride layer 110, n type gallium nitride layer 111, quantum well layer 112 and P type gallium nitride layer 113 can adopt the growing methods such as MOCVD/MBE molecular beam epitaxy to be formed successively, the material of described current extending 114 can be such as the thin-films Oxygen compound of the low resistances such as ITO (tin-doped indium oxide), zinc oxide (ZnO) or AZO (Al-Doped ZnO), high transmission rate, can be formed by sputtering (Sputter) mode or plasma assisted deposition (RPD) mode.The material of described speculum 115 can be such as aluminium (Al), silver (Ag), can be formed by evaporation.Or speculum 115 is chosen as distributed bragg reflector mirror (DBR).The material of described metal bonding layer 116 can be such as gold (Au), tin (Sn) or gold-tin alloy.
Then, please refer to Fig. 4, perform step S102, provide the second substrate 12, by described functional layer 11 and described front-end architecture phase bonding; Concrete, the material of described second substrate 12 can comprise silicon (Si), copper (Cu), tungsten (W) or molybdenum (Mo) etc., thus possesses good heat conduction and conductivity.Second substrate 12 is bonded together especially by metal bonding layer 116 and described front-end architecture.
Then, please refer to Fig. 5, perform step S103, adopt hot spot to be less than or equal to 150 μm of square laser beams and described front-end architecture is irradiated, to peel off described first substrate.Preferably, before described first substrate of stripping, first described first substrate back is polished to smooth no marking, prevents the hot spot affecting laser beam due to rough surface.Wherein figure 5 show the vertical view of light emitting diode (LED) chip with vertical structure, comprise multiple unit (Die) 13, in the present invention, adopt laser beam spot 15 be less than or equal to 150 μm square, therefore, the area of hot spot 15 is very little, after then irradiating between the first substrate and gallium nitride, gallium nitride is decomposed, the amount of the gas (nitrogen) discharged just seldom, thus can guarantee that impulsive force is very little, and Stress Release is more relaxed, also just reduce the damage to gallium nitride material, reach the object reducing electric leakage risk.Because small light spot of the present invention is very little on the impact of gallium nitride, therefore, need hot spot to overlap on Cutting Road 14 in the prior art unlike picture, but can directly adopt laser beam to irradiate successively a unit 13, therefore greatly reduce Operating Complexity, improve operability.Preferably, in the present invention, the wavelength of the laser beam of employing is less than or equal to 355nm, such as, be chosen as 248nm, 355nm etc., and makes the uniformity of described hot spot 15 be less than or equal to 5%, thus obtains better peeling effect.As shown in Figure 6, described first substrate is stripped, and described second substrate 12 is as the substrate of light emitting diode (LED) chip with vertical structure.
After stripping first substrate, also comprise: the gallium (Ga) produced after removing the first substrate desquamation.Wet process can be adopted to remove, relate to solution and comprise the acid of the galliums such as HCL and reaction or alkali is also fine.
Afterwards, as shown in Figure 7, etch described undoped gallium nitride layer, expose n type gallium nitride layer 111.This etching process can be whole etching, or graphically etches, and what adopt in the embodiment of the present invention is whole etching.After treating that n type gallium nitride layer 111 exposes, surface coarsening process is carried out to the n type gallium nitride layer 111 exposed.Such as adopt potassium hydroxide (KOH) solution, sulfuric acid (H
2sO
4) solution etc., obtain rough surface 16, to improve light emission rate.
Finally, as shown in Figure 8, n type gallium nitride layer 111 after surface coarsening forms N electrode 17, its material can be such as nickel (Ni)/gold (Au), aluminium (Al)/titanium (Ti)/platinum (Pt)/gold (Au), chromium (Cr)/platinum (Pt)/gold (Au) etc.And evaporation passivation layer 18, the n type gallium nitride layer 111 after covering surfaces alligatoring, the material of described passivation layer 18 can be such as silica.
Thus, light emitting diode (LED) chip with vertical structure manufacture of the present invention completes, and is less than or equal to 150 μm of square laser beams irradiates described front-end architecture, to peel off described first substrate by adopting hot spot.Compared to existing technology, because the hot spot adopted is less, reduce the damage to front-end architecture in stripping process, thus be conducive to the yield promoting obtained light emitting diode (LED) chip with vertical structure.In addition, the restriction of aiming at Cutting Road when also eliminating stripping, improves the operability of laser lift-off.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (7)
1. a manufacture method for light emitting diode (LED) chip with vertical structure, comprising:
There is provided front-end architecture, described front-end architecture comprises the first substrate, is formed at the functional layer in described first substrate face;
There is provided the second substrate, by described functional layer and described front-end architecture phase bonding;
Adopt hot spot to be less than or equal to 150 μm of square laser beams to irradiate described front-end architecture, to peel off described first substrate.
2. the manufacture method of light emitting diode (LED) chip with vertical structure as claimed in claim 1, it is characterized in that, the wavelength of described laser beam is less than or equal to 355nm.
3. the manufacture method of light emitting diode (LED) chip with vertical structure as claimed in claim 1, it is characterized in that, the uniformity of described hot spot is less than or equal to 5%.
4. the manufacture method of light emitting diode (LED) chip with vertical structure as claimed in claim 1, it is characterized in that, described functional layer comprises and stacks gradually the undoped gallium nitride layer be formed in described first substrate face, n type gallium nitride layer, quantum well layer, P type gallium nitride layer, current extending, speculum and metal bonding layer.
5. the manufacture method of light emitting diode (LED) chip with vertical structure as claimed in claim 4, it is characterized in that, described second substrate is by metal bonding layer and described front-end architecture phase bonding.
6. the manufacture method of light emitting diode (LED) chip with vertical structure as claimed in claim 1, is characterized in that, after the second substrate bonding, before stripping first substrate, also comprise:
Described first substrate back is polished to smooth no marking.
7. the manufacture method of light emitting diode (LED) chip with vertical structure as claimed in claim 1, is characterized in that, after stripping first substrate, also comprise:
The gallium produced after removing the first substrate desquamation;
Etching undoped gallium nitride layer, exposes n type gallium nitride layer;
Surface coarsening process is carried out to the n type gallium nitride layer exposed;
Form N electrode, and evaporation passivation layer.
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| CN106328776A (en) * | 2016-08-31 | 2017-01-11 | 中联西北工程设计研究院有限公司 | Preparation method of vertical-structure purple light LED chip |
| CN106449899A (en) * | 2016-08-31 | 2017-02-22 | 中联西北工程设计研究院有限公司 | Fabrication method of vertical-structure blue-light LED chip |
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| US20030150843A1 (en) * | 2001-12-03 | 2003-08-14 | Sony Corporation | Crystal layer separation method, laser irradiation method and method of fabricating devices using the same |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106328776A (en) * | 2016-08-31 | 2017-01-11 | 中联西北工程设计研究院有限公司 | Preparation method of vertical-structure purple light LED chip |
| CN106449899A (en) * | 2016-08-31 | 2017-02-22 | 中联西北工程设计研究院有限公司 | Fabrication method of vertical-structure blue-light LED chip |
| CN106328776B (en) * | 2016-08-31 | 2019-04-09 | 中联西北工程设计研究院有限公司 | A kind of preparation method of vertical structure purple LED chip |
| CN106449899B (en) * | 2016-08-31 | 2019-07-02 | 中联西北工程设计研究院有限公司 | A kind of preparation method of vertical structure blue-light LED chip |
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