CN104868765B - A kind of inverter pulse duration modulation method - Google Patents
A kind of inverter pulse duration modulation method Download PDFInfo
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- CN104868765B CN104868765B CN201410061653.0A CN201410061653A CN104868765B CN 104868765 B CN104868765 B CN 104868765B CN 201410061653 A CN201410061653 A CN 201410061653A CN 104868765 B CN104868765 B CN 104868765B
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Abstract
The invention discloses a kind of inverter pulse duration modulation method, including：The voltage according to needed for loading each phase calculates the initial turn-on time for each phase switch element of inverter；Collection load phase current simultaneously calculates its absolute value, and using the one of wherein maximum absolute value mutually as adjustment phase, the expectation ON time of switch element and diode in adjustment phase is calculated respectively；According to the initial turn-on time and switch element of each phase switch element and the adjustment amount of the ON time for expecting ON time calculating switch element of diode, and on the initial turn-on time of each phase switch element of the inverter that is added to, ON time after being then superimposed according to each phase switch element calculates the ON time after each phase switch element adjustment, and corresponding pulse-modulated signal is produced finally according to the ON time after adjustment.The present invention is capable of the temperature rise of efficient balance switch element and diode, provides further to improve inverter fan-out capability and lays a good foundation.
Description
Technical field
The present invention relates to automatic control technology field, specifically, it is related to a kind of inverter pulse duration modulation method.
Background technology
Current inverter generally uses insulated gate bipolar transistor（Insulated Gate Bipolar
Transistor, referred to as IGBT）Or metal oxide semiconductor field effect tube（Metal-Oxide-Semiconductor
Field-Effect Transistor, referred to as MOSFET）As switching device, due to the material property of silicon semiconductor, IGBT
Trouble free service junction temperature with MOSFET chips is generally below 150 DEG C, and the temperature of chip can after the safety limit more than junction temperature
It can cause chip permanent damage.In order to reduce temperature rise during chip operation, the measure of two aspects is usually taken：One is to the greatest extent
Radiating thermal resistance of the amount reduction chip to cooling medium；Two are to try to reduce loss during chip operation.
Inverter is operated in zero load frequency or low-load frequency operating mode（Such as three-phase permanent magnet synchronous motor stall）When, respectively
Phase current is all lasting DC component.And in the case where exporting peak torque, a certain phase of motor may constantly flow
Peak inrush current is crossed, so as to cause the bridge being connected in inverter with this also to need constantly to export a peak-peak electricity
Stream.
As shown in Figure 1a, when motor peak point current phase just coincides with U, the electric current of U phases bridge output reaches most
Big value, is the algebraical sum of other two-phase bridge input currents.As shown in Figure 1 b, pipe IGBT and down tube two are at this moment gone up in U phases bridge
The live load of pole pipe is maximum, both meeting alternation switches, turns on and flows through peak point current.Down tube dead time and opened on ignoring
On the premise of the time of pass, the time sum of IGBT and each alternate conduction of diode is equal to the switch periods of inverter.Both lead
The factors such as the ratio and inverter DC input voitage, ac output voltage, load current phase, pulse duration modulation method of logical time
It is related.
Under above-mentioned operating mode, using existing pulse duration modulation method, loss can be caused between the upper down tube of same bridge arm
Situation pockety.The loss of typically igbt chip is larger, and the loss of the diode chip for backlight unit of offside is relatively low so that inversion
The temperature rise of device igbt chip in the process of running takes the lead in more than the limit value of chip itself, so as to cause chip or inverter to shut down
Or damage.This problem also turns into the bottleneck for hindering inverter fan-out capability further to be lifted during inverter design.
Existing inverter pulse duration modulation method is only directly to calculate inverter according to required ac output voltage value
The pulse width of each mutually output so that IGBT and diode have the too high risk of temperature, influence the reliability of inverter.
Based on above-mentioned situation, needing badly a kind of can effectively reduce the inverter pulsewidth modulation side of the overall temperature rise level of inverter
Method.
The content of the invention
To solve the above problems, the invention provides a kind of inverter pulse duration modulation method, methods described includes following step
Suddenly：
S301, the voltage according to needed for loading each phase calculate the initial turn-on time for being directed to switch element in each phase of inverter；
S302, collection load phase current simultaneously calculate its absolute value, and the one of the electric current of maximum absolute value will be flowed through in inverter
Mutually as adjustment phase, opening in adjustment phase is caused based on the ON time by switch element and diode in adjustment phase
The temperature rise for closing unit and diode is balanced, and the expectation ON time of switch element and diode in the adjustment phase is calculated respectively；
S303, according to switch element and diode in the initial turn-on time of switch element in adjustment phase and adjustment phase
It is expected that ON time calculates adjustment amount；
S304, the initial turn-on time of switch element in each phase of adjustment amount and inverter is overlapped obtains each phase switch
ON time after the superposition of unit；
Conducting after S305, the adjustment based on switch element in each phase of ON time calculating after the superposition of each phase switch element
Time；
S306, corresponding pulse-modulated signal produced according to the ON time after the adjustment.
According to one embodiment of present invention, switch element and diode in the adjustment phase are calculated according to following equation
Expect ON time：
Wherein, IonTo adjust the absolute value of phase current, VCEAnd VFRepresent switch element and diode in electric current I respectivelyonUnder
Pressure drop, RIGBT_thJFAnd RDiode_thJFSwitch element and diode are represented respectively to the radiating thermal resistance of cooling medium, and T is represented out
Pass cycle, EIGBT_turn_onAnd EIGBT_turn_offTurn-on consumption and shut-off of the switch element in a switch periods are represented respectively
Loss, EDiode_recRepresent reverse recovery loss of the diode in a switch periods, TIGBTAnd TDiodeAdjustment phase is represented respectively
The expectation ON time of middle switch element and diode.
According to one embodiment of present invention, the switch periods are equal to the expectation ON time and diode of switch element
Expectation ON time sum.
According to one embodiment of present invention, the adjustment amount T is calculated based on the current direction in adjustment phaseadd：
When adjusting the load of the current direction in phase, Tadd=TIGBT-Tx_up_IGBT；
When adjusting the outflow load of the electric current in phase, Tadd=TDiode-Tx_up_IGBT,
Wherein, TIGBTAnd TDiodeThe expectation ON time of switch element and diode in adjustment phase, T are represented respectivelyx_up_IGBT
Represent the initial turn-on time of switch element in adjustment phase.
According to one embodiment of present invention, it is described calculate in each phase after the adjustment of switch element ON time the step of
Including：
Search the minimum value of the ON time in each phase after the superposition of switch element；
According to the ON time after switch element superposition in the minimum value and each phase, calculating obtains switching in each phase
ON time after unit adjustment.
According to one embodiment of present invention, the conducting in each phase after switch element superposition is calculated according to following equation
Time：
Tu_up_IGBT_temp=Tu_up_IGBT+Tadd
Tv_up_IGBT_temp=Tv_up_IGBT+Tadd
Tw_up_IGBT_temp=Tw_up_IGBT+Tadd
Wherein, Tu_up_IGBT_temp、Tv_up_IGBT_temp、Tw_up_IGBT_tempRepresent to open in inverter u phases, v phases and w phases respectively
Close the ON time after the superposition of unit, Tu_up_IGBT、Tv_up_IGBT、Tw_up_IGBTRepresent respectively in inverter u phases, v phases and w phases
The initial turn-on time of switch element, TaddRepresent the adjustment amount.
According to one embodiment of present invention, the switch element in each phase is calculated based on the span of the minimum value
Adjustment after ON time,
When the minimum value is more than zero, calculated according to following equation when obtaining the conducting after the adjustment of switch element in each phase
Between：
T'u_up_IGBT=Tu_up_IGBT_temp
T'v_up_IGBT=Tv_up_IGBT_temp
T'w_up_IGBT=Tw_up_IGBT_temp
When the minimum value is less than zero, is calculated according to following equation and obtain leading after switch element adjustment in each phase
The logical time：
T′u_up_IGBT=Tu_up_IGBT_temp-Tx_up_IGBT_min
T′v_up_IGBT=Tv_up_IGBT_temp-Tx_up_IGBT_min
T′w_up_IGBT=Tw_up_IGBT_temp-Tx_up_IGBT_min
Wherein, T'u_up_IGBT、T'v_up_IGBT、T'w_up_IGBTSwitch element in inverter u phases, v phases and w phases is represented respectively
ON time after adjustment, Tu_up_IGBT_temp、Tv_up_IGBT_temp、Tw_up_IGBT_tempInverter u phases, v phases and w phases are represented respectively
The initial turn-on time of middle switch element, Tx_up_IGBT_minRepresent ON time in each phase after the superposition of switch element
Minimum value.
According to one embodiment of present invention, the step for being directed to the initial turn-on time of switch element in each phase of inverter is calculated
Suddenly include：
Voltage according to needed for each phase of inverter calculates each phase on time intermediate quantity respectively；
The maximum and minimum value of each phase on time intermediate quantity are found out respectively；
Based on switch periods, the ON time intermediate quantity of each phase, the maximum of the ON time intermediate quantity and most
Small value, reallocates according to zero vector and calculates the initial turn-on time of switch element in each phase of inverter.
According to one embodiment of present invention, the initial of switch element in each phase of inverter is calculated according to equation below
ON time：
Tu_up_IGBT=Tu+（T-Tmax-Tmin）×0.5
Tv_up_IGBT=Tv+（T-Tmax-Tmin）×0.5
Tw_up_IGBT=Tw+（T-Tmax-Tmin）×0.5
Wherein, Tu_up_IGBT_temp、Tv_up_IGBT_temp、Tw_up_IGBT_tempRepresent to open in inverter u phases, v phases and w phases respectively
Close the initial turn-on time of unit, Tu、Tv、TwThe ON time intermediate quantity of inverter u phases, v phases and w phases, T are represented respectivelymaxWith
TminThe maximum and minimum value of the ON time intermediate quantity of each phase are represented respectively, and T represents switch periods.
According to one embodiment of present invention, the switch element is insulated gate bipolar transistor.
ON time of the invention by adjusting switch element in each phase of inverter so that a part of on-state of switch element
Loss is transferred on the offside diode of same bridge arm, so as to adjust distribution of the on-state loss between switch element and diode
Ratio, and then the purpose of reduction switch element and the overall temperature rise level of chip is reached, the reliability of inverter is enhanced, to enter
One step improves inverter fan-out capability and laid a good foundation.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
Obtain it is clear that or invented and understood by embodiment.The purpose of the present invention and other advantages can be wanted in specification, right
Structure specifically noted in book and accompanying drawing is asked to realize and obtain.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing required in technology description to do simple introduction：
Fig. 1 a show that inverter U phases export the circuit diagram of peak point current；
Fig. 1 b show that inverter U phases export the phase diagram of peak point current；
Fig. 2 shows the principle signal of progress switch element according to an embodiment of the invention and diode temperature rise regulation
Figure；
Fig. 3 shows the flow chart of inverter pulse duration modulation method according to an embodiment of the invention；
Fig. 4 shows switch element initial turn-on time in calculating each phase of inverter according to an embodiment of the invention
Flow chart；
Fig. 5 shows the schematic diagram of pulsewidth modulation effect according to an embodiment of the invention.
Embodiment
Describe embodiments of the present invention in detail below with reference to drawings and Examples, how the present invention is applied whereby
Technological means solves technical problem, and reaches the implementation process of technique effect and can fully understand and implement according to this.Need explanation
As long as not constituting each embodiment in conflict, the present invention and each feature in each embodiment can be combined with each other,
The technical scheme formed is within protection scope of the present invention.
Existing inverter is generally using IGBT or MOSFET as switching device, in the present embodiment, from IGBT conducts
The switch element of three-phase inverter is described further to the inverter pulse duration modulation method that provides of the present invention, but the present invention
Not limited to this.
When inverter works, IGBT and diode can all produce loss.IGBT loss includes：On-state loss, switch are damaged
Consumption（Including turn-on consumption and turn-off power loss）；The loss of diode includes on-state loss and reverse recovery loss.In each switch
In cycle, IGBT switching loss is typically much deeper than the reverse recovery loss of diode, IGBT and diode on-state loss difference
It is different, depend primarily on the ratio of both ON times.If can be led in impulse modulation calculating process to IGBT and diode
The ratio of logical time is adjusted, it is possible to adjust allocation proportion of the on-state loss between IGBT and diode, and then can be with
Adjust the size of IGBT total losses and diode total losses.
To the inverter under certain radiating condition, the radiating thermal resistance value of IGBT and diode chip for backlight unit to cooling medium is substantially
It is fixed, therefore the loss in reduction chip can just reduce the operating temperature rise of chip.And by adjusting the ratio of ON time
Example, a part of on-state loss of igbt chip is transferred on diode chip for backlight unit, can make the temperature rise of igbt chip reduces.
The ON time sum of IGBT and diode is fixed, and it is equal to switch periods, so in same switch periods,
When IGBT ON time reduces, the ON time of diode will increase, so as to cause the temperature rise of diode to increase.Fig. 2 shows
IGBT and the preferable regulation situation of diode temperature rise under zero load frequency or low-load frequency are gone out, IGBT temperature rise before adjustment
More than the temperature rise of diode, by the ON time for adjusting IGBT so that IGBT is equal with the temperature rise of diode after adjustment, so that
Reach the purpose of the overall temperature rise level of reduction chip.
The present invention is based on principles above, IGBT on-state loss is adjusted by adjusting IGBT ON time, to cause
IGBT is equal with the temperature rise of diode, so as to reach the purpose of the overall temperature rise level of reduction.
In the present embodiment, E is usedIGBT_on、EIGBT_turn_onAnd EIGBT_turn_offRepresent IGBT in a switch periods respectively
On-state loss, turn-on consumption and turn-off power loss, then can according to following equation calculate obtain IGBT in a switch periods
Total losses EIGBT：
EIGBT=EIGBT_on+EIGBT_turn_on+EIGBT_turn_off (1)
Use EDiode_on、EDiode_recRepresent that on-state loss and Reverse recovery of the diode in a switch periods are damaged respectively
Consumption, then can calculate the total losses E for obtaining diode in a switch periods according to following equationDiode：
EDiode=EDiode_on+EDiode_rec (2)
To the inverter under certain radiating condition, the radiating thermal resistance value of IGBT and diode to cooling medium is substantially fixed
, use RIGBT_thJFAnd RDiode_thJFRepresent that IGBT and diode, then can be according to following to the radiating thermal resistance of cooling medium respectively
Formula calculates the operating temperature rise Δ t of IGBT and diode in a switch periods respectivelyIGBTWith Δ tDiode：
ΔtIGBT=[(EIGBT_on+EIGBT_turn_on+EIGBT_turn_off)/T]×RIGBT_thJF (3.1)
ΔtDiode=[(EDiode_on+EDiode_rec)/T]×RDiode_thJF (3.2)
Wherein, T represents switch periods.
When inverter load phase current is different, the working condition of upper down tube is also different in each phase of inverter.When load is mutually electric
During stream flow direction load, the upper pipe IGBT and down tube diode in the phase are in running order, and down tube IGBT and upper pipe diode are then
It is constantly in cut-off state；When loading phase current outflow load, down tube IGBT and upper pipe diode are in work shape in the phase
State, upper pipe IGBT and ShiShimonoseki diode are then constantly in cut-off state.
If TIGBTFor ON times of the in running order IGBT in a switch periods, TDiodeTo locate in same phase
In ON time of the diode in same switch periods of working condition, T is switch periods.It is former according to the work of inverter
Reason, the down tube dead time and on the premise of switch time on ignoring, has：
T=TIGBT+TDiode (4)
If IonTo load the absolute value of phase current, VCEAnd VFRepresent IGBT and diode in electric current I respectivelyonUnder pipe pressure
Drop, then can calculate the on-state loss E for obtaining IGBT and diode in a switch periods according to following equationIGBT_onWith
EDiode_on：
EIGBT_on=Ion×VCE×TIGBT (5.1)
EDiode_on=Ion×VF×TDiode (5.2)
Wherein, TIGBTAnd TDiodeIn running order IGBT and diode leading in a switch periods is represented respectively
The logical time.
Because the purpose of the present invention is that IGBT on-state loss is adjusted by adjusting IGBT ON time, and then is adjusted
Allocation proportion of the on-state loss between IGBT and diode in same bridge arm, to cause IGBT and diode temperature rise equal.
So making Δ tIGBTEqual to Δ tDiode, then have：
(Ion×VCE×TIGBT+EIGBT_turn_on+EIGBT_turn_off)×RIGBT_thJF=(Ion×VF×TDiode+EDiode_rec)
×RDiode_thJF (6)
For specific a switch periods, T, Ion、VCE、VF、EIGBT_turn_on、EIGBT_turn_off、EDiode_rec、
RIGBT_thJFAnd RDiode_thJFAll it is known quantity, therefore combinatorial formula (4) and formula (6) can be obtained in a switch periods
Make the IGBT ON times T that IGBT is equal with diode operation temperature riseIGBTWith diode ON time TDiode, i.e., one switch week
The expectation ON time of IGBT and diode in phase, it can calculate according to following equation obtain respectively：
Only it is the part in chip total losses due to on-state loss, in some operating modes（Such as load phase current is smaller）
Under, the temperature rise for the making IGBT effect equal with the temperature rise of diode can not be fully achieved in the ON time of adjustment IGBT and diode
Really, therefore using formula (7.1) and formula (7.2) T calculatedIGBTAnd TDiodeIt may be negative.Although this negative is run counter to
The physical meaning of ON time, but its correct demand for expressing further reduction ON time.So, TIGBTAnd TDiodeIt is negative
Count the application for not influenceing it in the present invention.
Fig. 3 shows the flow chart of pulse duration modulation method according to an embodiment of the invention.In the present embodiment, by inversion
The switch element and diode being connected in each phase of device with inverter power supply positive pole, will as upper pipe switch element and upper pipe diode
The switch element and diode being connected in each phase of inverter with inverter power supply negative pole are as down tube switch element and the pole of down tube two
Pipe, in the present embodiment, by adjust the ON time of upper pipe switch element in each phase come the thought and principle to the present invention and
Advantage is further illustrated.
The voltage according to needed for loading each phase is calculated for the switch element in each phase of inverter first in step S301
Initial turn-on time.In the present embodiment, calculate and managed in three-phase inverter u phases, v phases and w phases respectively in step S301
IGBT initial turn-on time Tu_up_IGBT、Tv_up_IGBTAnd Tw_up_IGBT, wherein in each phase pipe IGBT initial turn-on time meter
Calculation process is as shown in Figure 4.
Figure 4, it is seen that the voltage V first according to needed for loading each phaseu、Vv、VwThe basis respectively in step S401
Following equation calculates inverter u phases, v phases and w phase on time intermediate quantities Tu、Tv、Tw：
Tu=（Vu÷Udc）×T (8.1)
Tv=（Vv÷Udc）×T (8.2)
Tw=（Vw÷Udc）×T (8.3)
Wherein, UdcExpression is supplied to the direct current supply voltage of inverter, and T represents switch periods, Vu、Vv、VwRepresent respectively inverse
The voltage become needed for device u phases, v phases and w phases.
Then in step S402, the ON time intermediate quantity T that step S401 is obtained is found outu、Tv、TwIn maximum of Tmax
With minimum value Tmin：
Tmax=MAX [Tu,Tv,Tw] (9.1)
Tmin=MIN [Tu,Tv,Tw] (9.2)
Finally in step S403, the ON time intermediate quantity T obtained according to step S401u、Tv、TwObtained with step S402
The maximum and minimum value of the above-mentioned ON time intermediate quantity arrived carry out zero vector reallocation, respectively obtain and are managed in each phase of inverter
IGBT initial turn-on time Tu_up_IGBT、Tv_up_IGBT、Tw_up_IGBT.In the present embodiment, pipe IGBT's is initial in each phase of inverter
ON time can be calculated according to following equation and obtained：
Tu_up_IGBT=Tu+（T-Tmax-Tmin）×0.5 (10.1)
Tv_up_IGBT=Tv+（T-Tmax-Tmin）×0.5 (10.2)
Tw_up_IGBT=Tw+（T-Tmax-Tmin）×0.5 (10.3)
It should be noted that in other embodiments of the invention, pipe IGBT initial turn-on time in each phase of inverter
It can also be calculated and obtained by other method, the invention is not restricted to this.
Because the electric current that IGBT flows through in a phase of inverter load phase current maximum absolute value is maximum, so that its heating is most
To be serious, cause the temperature rise highest of igbt chip.So load phase current maximum absolute value is chosen in the present embodiment one mutually makees
To adjust phase, by being adjusted to the IGBT and the ON time of diode in adjustment phase, more effectively to reduce IGBT
With the overall temperature rise of diode, but the invention is not restricted to this.
Again as shown in figure 3, in the present embodiment, collection in step s 302 loads phase current and calculates its absolute value, will
One that the electric current of maximum absolute value is flowed through in inverter mutually calculates in running order in adjustment phase open as phase is adjusted, respectively
Close the expectation ON time of unit and diode.Adjustment phase is calculated respectively using formula (7.1) and formula (7.2) in the present embodiment
In in running order IGBT and diode expectation ON time TIGBTAnd TDiode, but the invention is not restricted to this, in basis
In the other embodiment of the present invention, the expectation ON time of switch element and diode can also be calculated by other reasonable formula
Obtain.
Based on the load phase current flow direction in adjustment phase in step S303, according to expectation ON time TIGBTAnd TDiodeWith
And the initial turn-on time calculating of switch element obtains adjustment amount T in adjustment phaseadd, i.e. the adjustment amount of switching means conductive time.
When adjusting the flow direction load of the load phase current in phase, upper pipe IGBT and down tube diode in the phase are in work
State, down tube IGBT and upper pipe diode are in cut-off state.Now TIGBTAs desired upper pipe IGBT ON time, institute
To need the ON time by upper pipe IGBT to be adjusted to TIGBT.Use TaddRepresent the upper pipe IGBT adjusted in phase ON time
Tx_up_IGBTIt is adjusted to TIGBTRequired increment, then can calculate according to following equation and obtain Tadd：
Tadd=TIGBT-Tx_up_IGBT (11)
Wherein, Tx_up_IGBTRepresent the initial turn-on time of upper pipe IGBT in adjustment phase.
When adjusting the outflow load of the load phase current in phase, down tube IGBT and upper pipe diode are in work in adjustment phase
State, upper pipe IGBT and down tube diode are in cut-off state, now TDiodeAs desired upper pipe IGBT ON time, just
The ON time by upper pipe IGBT is needed to be adjusted to TDiode.Now adjustment amount TaddIt can be calculated and obtained according to following equation：
Tadd=TDiode-Tx_up_IGBT (12)
Wherein, Tx_up_IGBTRepresent the initial turn-on time of upper pipe IGBT in adjustment phase.
In the present embodiment, in order to ensure that the voltage effective dose of three-phase synthesis is constant, adjustment phase is calculated in step S303
Upper pipe IGBT adjustment amount TaddAfterwards, in step s 304 by adjustment amount TaddIn each phase that is added to during pipe IGBT initial turn-on
Between on, obtain the ON time after the superposition of pipe IGBT in each phase.In the present embodiment, respectively according to following equation calculate obtain u phases,
ON time T in v phases, w phases after upper pipe IGBT superpositionu_up_IGBT_temp、Tv_up_IGBT_temp、Tw_up_IGBT_temp：
Tu_up_IGBT_temp=Tu_up_IGBT+Tadd (13.1)
Tv_up_IGBT_temp=Tv_up_IGBT+Tadd (13.2)
Tw_up_IGBT_temp=Tw_up_IGBT+Tadd (13.3)
In some cases, pipe IGBT ON time T in each phase calculated by step S304u_up_IGBT_temp、
Tv_up_IGBT_temp、Tw_up_IGBT_tempIn there is negative, and it can not possibly be negative to be actually turned on the time, it is therefore desirable to step
The ON time that S304 calculates in obtained each phase after pipe IGBT superposition is further handled, it is ensured that what is finally calculated leads
The logical time is not negative.
As shown in figure 3, in the present invention, the ON time after the superposition based on pipe IGBT in each phase in step S305 is calculated
ON time in each phase after pipe IGBT adjustment.
First look in the minimum value in the ON time in each phase after pipe IGBT superposition, each phase after pipe IGBT superposition
ON time minimum value Tx_up_IGBT_minIt can be calculated and obtained according to following equation：
Tx_up_IGBT_min=MIN[Tu_up_IGBT_temp,Tv_up_IGBT_temp,Tw_up_IGBT_temp] (14)
If the minimum value is not the corresponding upper pipe of ON time after the adjustment of pipe IGBT on negative, i.e. each phase
ON time after IGBT superposition.Now, the ON time T' in each phase after pipe IGBT adjustmentu_up_IGBT、T'v_up_IGBT、
T'w_up_IGBTIt can be represented with following equation：
T′u_up_IGBT=Tu_up_IGBT_temp (15.1)
T′v_up_IGBT=Tv_up_IGBT_temp (15.2)
T′w_up_IGBT=Tw_up_IGBT_temp (15.3)
If the minimum value is negative, need the ON time after pipe IGBT superposition in each phase subtracting the minimum
Value so that the ON time in each phase finally calculated after pipe IGBT adjustment is not negative.Now, pipe IGBT in each phase
ON time T' after adjustmentu_up_IGBT、T'v_up_IGBT、T'w_up_IGBTIt can be calculated and obtained according to following equation respectively：
T′u_up_IGBT=Tu_up_IGBT_temp-Tx_up_IGBT_min (16.1)
T′v_up_IGBT=Tv_up_IGBT_temp-Tx_up_IGBT_min (16.2)
T′w_up_IGBT=Tw_up_IGBT_temp-Tx_up_IGBT_min (16.3)
Finally in step S306, during according to calculating in obtained each phase the conducting after pipe IGBT adjustment in step S305
Between produce corresponding pulse-modulated signal so that the temperature rise of switch element and diode is equalized in each phase of inverter.
Fig. 5 shows the design sketch according to pulse duration modulation method proposed by the present invention, by adjusting upper pipe IGBT in each phase
ON time control in each phase pipe IGBT and down tube diode on-state loss so that in same phase upper pipe IGBT and under
The temperature rise of pipe diode is equal, is to lift inverter in zero load so as to reach the purpose of the overall temperature rise level of reduction inverter
Fan-out capability under the special operation condition such as frequency or low-load frequency creates condition.
When inverter is in low-load frequency even zero load frequency operating mode, power frequency in each phase of inverter will be compared with
Small even DC current, a certain switch element for so easily causing inverter works under high current for a long time.Work as inverter
During in high capacity frequency operating mode, the power frequency in each phase of inverter is higher, so that the loss of inverter switching device unit becomes
Obtain balanced.The inverter pulse duration modulation method that the present invention is provided is in low-load frequency even zero load frequency operating mode in inverter
Regulating effect when lower is more effective, compared to existing inverter pulse duration modulation method, each phase of inverter can be will become apparent from
The reduction of the temperature rise of middle switch element.
In order to optimize inverter pulsewidth modulation flow, it can also be in inverter under low-load frequency or zero frequency operating mode
When, pulsewidth modulation is carried out to inverter using the inverter pulse duration modulation method illustrated in such as the present embodiment, so that the operating mode
The temperature rise of switch element and diode in lower each phase of inverter is equalized, and improves the reliability of inverter.At inverter
When high capacity frequency, pulsewidth modulation is carried out to inverter using inverter pulse duration modulation method of the prior art.Such energy
The flow of inverter pulsewidth modulation during enough further simplified high capacity frequencies, can also reduce modulation time and modulation cost.
Although disclosed herein embodiment as above, described content is only to facilitate understanding the present invention and adopting
Embodiment, is not limited to the present invention.Any those skilled in the art to which this invention pertains, are not departing from this
On the premise of the disclosed spirit and scope of invention, any modification and change can be made in the implementing form and in details,
But the scope of patent protection of the present invention, still should be subject to the scope of the claims as defined in the appended claims.
Claims (20)
1. a kind of inverter pulse duration modulation method, it is characterised in that the described method comprises the following steps：
S301, the voltage according to needed for loading each phase calculate the initial turn-on time for being directed to switch element in each phase of inverter；
S302, collection load phase current simultaneously calculate its absolute value, and one that the electric current of maximum absolute value will be flowed through in inverter mutually makees
For adjustment phase, the switch list in adjustment phase is caused based on the ON time by switch element and diode in adjustment phase
The temperature rise of member and diode is balanced, and the expectation ON time of switch element and diode in the adjustment phase is calculated respectively；
S303, the expectation according to switch element and diode in the initial turn-on time of switch element in adjustment phase and adjustment phase
ON time calculates adjustment amount；
S304, the initial turn-on time of switch element in each phase of adjustment amount and inverter is overlapped obtains each phase switch element
Superposition after ON time；
S305, be superimposed based on each phase switch element after ON time when calculating in each phase the conducting after the adjustment of switch element
Between；
S306, corresponding pulse-modulated signal produced according to the ON time after the adjustment；
Wherein, in step S302, when the expectation for calculating switch element and diode in the adjustment phase according to following equation is turned on
Between：
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Wherein, IonTo adjust the absolute value of phase current, VCEAnd VFRepresent switch element and diode in electric current I respectivelyonUnder pressure
Drop, RIGBT_thJFAnd RDiode_thJFRepresent that switch element and diode arrive the radiating thermal resistance of cooling medium respectively, T represents that switch is all
Phase, EIGBT_turn_onAnd EIGBT_turn_offTurn-on consumption and turn-off power loss of the switch element in a switch periods are represented respectively,
EDiode_recRepresent reverse recovery loss of the diode in a switch periods, TIGBTAnd TDiodeRepresent to open in adjustment phase respectively
Close the expectation ON time of unit and diode.
2. the method as described in claim 1, it is characterised in that the switch periods are equal to the expectation ON time of switch element
With the expectation ON time sum of diode.
3. method as claimed in claim 1 or 2, it is characterised in that the tune is calculated based on the current direction in adjustment phase
Whole amount Tadd：
When adjusting the load of the current direction in phase, Tadd=TIGBT-Tx_up_IGBT；
When adjusting the outflow load of the electric current in phase, Tadd=TDiode-Tx_up_IGBT,
Wherein, TIGBTAnd TDiodeThe expectation ON time of switch element and diode in adjustment phase, T are represented respectivelyx_up_IGBTRepresent
Adjust the initial turn-on time of switch element in phase.
4. method as claimed in claim 1 or 2, it is characterised in that leading after the adjustment of switch element in each phase of calculating
The step of logical time, includes：
Search the minimum value of the ON time in each phase after the superposition of switch element；
According to the ON time after switch element superposition in the minimum value and each phase, calculating obtains switch element in each phase
ON time after adjustment.
5. method as claimed in claim 3, it is characterised in that in each phase of calculating during conducting after the adjustment of switch element
Between the step of include：
Search the minimum value of the ON time in each phase after the superposition of switch element；
According to the ON time after switch element superposition in the minimum value and each phase, calculating obtains switch element in each phase
ON time after adjustment.
6. method as claimed in claim 4, it is characterised in that switch element in each phase is calculated according to following equation and is superimposed
ON time afterwards：
Tu_up_IGBT_temp=Tu_up_IGBT+Tadd
Tv_up_IGBT_temp=Tv_up_IGBT+Tadd
Tw_up_IGBT_temp=Tw_up_IGBT+Tadd
Wherein, Tu_up_IGBT_temp、Tv_up_IGBT_temp、Tw_up_IGBT_tempRepresent to switch list in inverter u phases, v phases and w phases respectively
ON time after the superposition of member, Tu_up_IGBT、Tv_up_IGBT、Tw_up_IGBTRepresent to switch in inverter u phases, v phases and w phases respectively
The initial turn-on time of unit, TaddRepresent the adjustment amount.
7. method as claimed in claim 5, it is characterised in that switch element in each phase is calculated according to following equation and is superimposed
ON time afterwards：
Tu_up_IGBT_temp=Tu_up_IGBT+Tadd
Tv_up_IGBT_temp=Tv_up_IGBT+Tadd
Tw_up_IGBT_temp=Tw_up_IGBT+Tadd
Wherein, Tu_up_IGBT_temp、Tv_up_IGBT_temp、Tw_up_IGBT_tempRepresent to switch list in inverter u phases, v phases and w phases respectively
ON time after the superposition of member, Tu_up_IGBT、Tv_up_IGBT、Tw_up_IGBTRepresent to switch in inverter u phases, v phases and w phases respectively
The initial turn-on time of unit, TaddRepresent the adjustment amount.
8. method as claimed in claims 6 or 7, it is characterised in that each phase is calculated based on the span of the minimum value
In switch element adjustment after ON time,
When the minimum value is more than zero, the ON time obtained in each phase after switch element adjustment is calculated according to following equation：
T′u_up_IGBT=Tu_up_IGBT_temp
T′v_up_IGBT=Tv_up_IGBT_temp
T′w_up_IGBT=Tw_up_IGBT_temp
When the minimum value is less than zero, calculated according to following equation when obtaining the conducting after the adjustment of switch element in each phase
Between：
T′u_up_IGBT=Tu_up_IGBT_temp-Tx_up_IGBT_min
T′v_up_IGBT=Tv_up_IGBT_temp-Tx_up_IGBT_min
T′w_up_IGBT=Tw_up_IGBT_temp-Tx_up_IGBT_min
Wherein, T'u_up_IGBT、T'v_up_IGBT、T'w_up_IGBTThe adjustment of switch element in inverter u phases, v phases and w phases is represented respectively
ON time afterwards, Tu_up_IGBT_temp、Tv_up_IGBT_temp、Tw_up_IGBT_tempRepresent to open in inverter u phases, v phases and w phases respectively
Close the ON time after the superposition of unit, Tx_up_IGBT_minRepresent ON time in each phase after the superposition of switch element
Minimum value.
9. the method as any one of claim 1,2 and 5-7, it is characterised in that calculate to be directed in each phase of inverter and open
The step of initial turn-on time for closing unit, includes：
Voltage according to needed for each phase of inverter calculates each phase on time intermediate quantity respectively；
The maximum and minimum value of each phase on time intermediate quantity are found out respectively；
Based on switch periods, the ON time intermediate quantity of each phase, the maximum and minimum value of the ON time intermediate quantity,
Reallocated according to zero vector and calculate the initial turn-on time of switch element in each phase of inverter.
10. method as claimed in claim 3, it is characterised in that calculate and led for the initial of switch element in each phase of inverter
The step of logical time, includes：
Voltage according to needed for each phase of inverter calculates each phase on time intermediate quantity respectively；
The maximum and minimum value of each phase on time intermediate quantity are found out respectively；
Based on switch periods, the ON time intermediate quantity of each phase, the maximum and minimum value of the ON time intermediate quantity,
Reallocated according to zero vector and calculate the initial turn-on time of switch element in each phase of inverter.
11. method as claimed in claim 4, it is characterised in that calculate and led for the initial of switch element in each phase of inverter
The step of logical time, includes：
Voltage according to needed for each phase of inverter calculates each phase on time intermediate quantity respectively；
The maximum and minimum value of each phase on time intermediate quantity are found out respectively；
Based on switch periods, the ON time intermediate quantity of each phase, the maximum and minimum value of the ON time intermediate quantity,
Reallocated according to zero vector and calculate the initial turn-on time of switch element in each phase of inverter.
12. method as claimed in claim 8, it is characterised in that calculate and led for the initial of switch element in each phase of inverter
The step of logical time, includes：
Voltage according to needed for each phase of inverter calculates each phase on time intermediate quantity respectively；
The maximum and minimum value of each phase on time intermediate quantity are found out respectively；
Based on switch periods, the ON time intermediate quantity of each phase, the maximum and minimum value of the ON time intermediate quantity,
Reallocated according to zero vector and calculate the initial turn-on time of switch element in each phase of inverter.
13. method as claimed in claim 9, it is characterised in that calculated in each phase of inverter and switched according to equation below
The initial turn-on time of unit：
Tu_up_IGBT=Tu+(T-Tmax-Tmin)×0.5
Tv_up_IGBT=Tv+(T-Tmax-Tmin)×0.5
Tw_up_IGBT=Tw+(T-Tmax-Tmin)×0.5
Wherein, Tu_up_IGBT、Tv_up_IGBT、Tw_up_IGBTThe initial of switch element is led in expression inverter u phases, v phases and w phases respectively
Logical time, Tu、Tv、TwThe ON time intermediate quantity of inverter u phases, v phases and w phases, T are represented respectivelymaxAnd TminRepresent respectively described
The maximum and minimum value of the ON time intermediate quantity of each phase, T represent switch periods.
14. the method as any one of claim 10-12, it is characterised in that the inversion is calculated according to equation below
The initial turn-on time of switch element in each phase of device：
Tu_up_IGBT=Tu+(T-Tmax-Tmin)×0.5
Tv_up_IGBT=Tv+(T-Tmax-Tmin)×0.5
Tw_up_IGBT=Tw+(T-Tmax-Tmin)×0.5
Wherein, Tu_up_IGBT、Tv_up_IGBT、Tw_up_IGBTThe initial of switch element is led in expression inverter u phases, v phases and w phases respectively
Logical time, Tu、Tv、TwThe ON time intermediate quantity of inverter u phases, v phases and w phases, T are represented respectivelymaxAnd TminRepresent respectively described
The maximum and minimum value of the ON time intermediate quantity of each phase, T represent switch periods.
15. such as claim 1,2,5-7 and the method any one of 10-13, it is characterised in that the switch element is exhausted
Edge grid bipolar transistor.
16. method as claimed in claim 3, it is characterised in that the switch element is insulated gate bipolar transistor.
17. method as claimed in claim 4, it is characterised in that the switch element is insulated gate bipolar transistor.
18. method as claimed in claim 8, it is characterised in that the switch element is insulated gate bipolar transistor.
19. method as claimed in claim 9, it is characterised in that the switch element is insulated gate bipolar transistor.
20. method as claimed in claim 14, it is characterised in that the switch element is insulated gate bipolar transistor.
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| CN102368668A (en) * | 2011-08-17 | 2012-03-07 | 联合汽车电子有限公司 | Method for reducing loss of electromobile vehicle-mounted inverter and improving current output capacity of electromobile vehicle-mounted inverter |
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| CN102368668A (en) * | 2011-08-17 | 2012-03-07 | 联合汽车电子有限公司 | Method for reducing loss of electromobile vehicle-mounted inverter and improving current output capacity of electromobile vehicle-mounted inverter |
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Address after: Fifty-seven, Zhuzhou Province, China National hi tech Development Zone, Hunan, Li Yu Industrial Park, district 412007 Patentee after: Zhongche Times Electric Vehicle Co.,Ltd. Address before: Fifty-seven, Zhuzhou Province, China National hi tech Development Zone, Hunan, Li Yu Industrial Park, district 412007 Patentee before: HUNAN CRRC TIMES ELECTRIC VEHICLE Co.,Ltd. Address after: Fifty-seven, Zhuzhou Province, China National hi tech Development Zone, Hunan, Li Yu Industrial Park, district 412007 Patentee after: HUNAN CRRC TIMES ELECTRIC VEHICLE Co.,Ltd. Address before: Fifty-seven, Zhuzhou Province, China National hi tech Development Zone, Hunan, Li Yu Industrial Park, district 412007 Patentee before: HUNAN CSR TIMES ELECTRIC VEHICLE Co.,Ltd. |