CN104868010A - Method for reducing light induced attenuation of P type crystalline silicon solar cells and assemblies thereof by using strong light irradiation - Google Patents
Method for reducing light induced attenuation of P type crystalline silicon solar cells and assemblies thereof by using strong light irradiation Download PDFInfo
- Publication number
- CN104868010A CN104868010A CN201510095296.4A CN201510095296A CN104868010A CN 104868010 A CN104868010 A CN 104868010A CN 201510095296 A CN201510095296 A CN 201510095296A CN 104868010 A CN104868010 A CN 104868010A
- Authority
- CN
- China
- Prior art keywords
- silicon solar
- crystal silicon
- finished product
- type crystal
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 54
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 10
- 230000000712 assembly Effects 0.000 title abstract 3
- 238000000429 assembly Methods 0.000 title abstract 3
- 239000000047 product Substances 0.000 claims abstract description 38
- 239000011265 semifinished product Substances 0.000 claims abstract description 35
- 230000005855 radiation Effects 0.000 claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 93
- 229910052710 silicon Inorganic materials 0.000 claims description 93
- 239000010703 silicon Substances 0.000 claims description 93
- 239000013078 crystal Substances 0.000 claims description 73
- 238000005286 illumination Methods 0.000 claims description 43
- 238000010438 heat treatment Methods 0.000 claims description 25
- 229910052736 halogen Inorganic materials 0.000 claims description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 15
- 150000002367 halogens Chemical class 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 13
- 238000010030 laminating Methods 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000003475 lamination Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 claims description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052796 boron Inorganic materials 0.000 abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 abstract description 9
- 239000001301 oxygen Substances 0.000 abstract description 9
- LBZRRXXISSKCHV-UHFFFAOYSA-N [B].[O] Chemical class [B].[O] LBZRRXXISSKCHV-UHFFFAOYSA-N 0.000 abstract 1
- 230000001172 regenerating effect Effects 0.000 abstract 1
- 230000009466 transformation Effects 0.000 description 13
- 238000012360 testing method Methods 0.000 description 12
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 239000003921 oil Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 230000005457 Black-body radiation Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000013082 photovoltaic technology Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for reducing light induced attenuation of P type crystalline silicon solar cells and assemblies thereof by using strong light irradiation. According to the method, strong light of which the radiation intensity ranges from 2 to 20kW/m2 is utilized to irradiate finished products or semi-finished products of P type crystalline silicon solar cells or finished products or semi-finished products of P type crystalline silicon solar cells under an open-circuit state for 30 seconds. Since boron-doped P type crystalline silicon solar cells are subjected to strong light irradiation, metastable state boron-oxygen complexes are decomposed into stable boron and oxygen regenerative bodies, and therefore, the light induced attenuation of the P type crystalline silicon solar cells and the assemblies thereof can be greatly reduced.
Description
Technical field
The invention belongs to field of photovoltaic technology, be specifically related to a kind of method that effectively can reduce P-type crystal silicon solar cell and assembly photo attenuation thereof.
Background technology
Photovoltaic technology is a technology utilizing large-area p-n junction diode to convert solar energy into electrical energy.This p-n junction diode is called solar cell.The semi-conducting material making solar cell all has certain energy gap, when solar cell is subject to solar radiation, the photon that energy exceedes energy gap produces electron hole pair in solar cell, electron hole pair is separated by p-n junction, the asymmetry of p-n junction determines the flow direction of dissimilar photo-generated carrier, and being connected by external circuit can outside power output.This is similar with common electrochemical cell principle.
The crystal silicon solar energy battery overwhelming majority of current suitability for industrialized production is made up of boron-doping P-type silicon sheet.Boron-doping P-type silicon sheet mentioned here comprises boron-doping monocrystalline silicon, B-doped Polycrystalline Silicon and boron-doping class monocrystalline silicon.The solar cell be made up of boron-doping P-type silicon sheet all can run into the problem of so-called photo attenuation (LID): namely the service behaviour of solar cell can decrease after illumination, be usually expressed as just had the decay of several percentage points (method of measurement of standard is at solar irradiation energy intensity (AM1.5G, a 1000W/m in power output within several hours
2) irradiate 5 hours under condition).Although up to now to this problem also perfect physical interpretation of neither one, the general common recognition of academia and industrial quarters all thinks the boron oxygen complex formed in silicon substrate after the photo attenuation of the solar cell that P-type silicon sheet is made derives from illumination.Oxygen wherein in silicon chip introduces in the process of crystal growth.The formation of this boron oxygen complex in silicon chip also becomes photo-generated carrier complex centre, thus causes the reduced lifetime of minority carrier in silicon chip, causes the reduction of solar cell energy conversion efficiency.
People find the research of the photo attenuation of the solar cell that boron-doping P-type silicon sheet is made for a long time, the boron oxygen complex formed after illumination in crystal silicon chip is in a kind of metastable state form, in certain temperature range, after (200 ~ 250 DEG C) annealing, the concentration of boron oxygen complex can significantly reduce, photo attenuation is minimized and repairs [J.Schmidt & A.Cuevas, Electronic Properties of Light-InducedRecombination Centers in Boron-doped Czochralski Silicon, Appl.Phys.Lett.86, 3175 (1999)].But the reduction of the photo attenuation that this process obtains and reparation are temporary transient, and the phenomenon of cell piece photo attenuation after illumination can be recovered again.
The crystalline silicon component of suitability for industrialized production can run into the problem of photo attenuation, it has been generally acknowledged that photo attenuation comes from the boron oxygen complex of the formation after illumination in silicon substrate.Boron oxygen complex reduces the body life time of crystal silicon crystalline silicon component as defect center thus result in the reduction of cell photoelectric transformation efficiency.
The method avoided or reduce crystalline silicon component photo attenuation generally has following several:
(1) magnetic field Czochralski method (MCZ method) and zone melting single-crystal method (FZ method) technique pulling of crystals reduce the oxygen content in silicon substrate;
(2) reduce the Boron contents in silicon chip, namely improve P-type silicon sheet matrix resistivity;
(3) gallium or phosphorus is adopted to replace boron as silicon substrate dopant.
First method is higher due to production cost, is not suitable for scale of mass production; Second method can affect the electrical property of battery; The third method due to the segregation coefficient of gallium and phosphorus lower, resistivity be difficult to control, have impact on the yield of silicon chip, be also not suitable for large-scale application.
Summary of the invention
The object of the present invention is to provide a kind of method utilizing high light irradiation to reduce P-type crystal silicon solar cell and assembly photo attenuation thereof, the method is passed through boron-doping P-type crystal silicon solar cell under strong illumination, metastable state boron oxygen complex is separated form stable boron and oxygen ecological again, thus significantly can reduce the photo attenuation of P-type crystal silicon solar cell and assembly thereof.
Above-mentioned purpose of the present invention is achieved through the following technical solutions: a kind of method utilizing high light irradiation to reduce P-type crystal silicon solar cell and assembly photo attenuation thereof, to P-type crystal silicon solar cell finished product or semi-finished product, or P-type crystal silicon solar module finished product under open-circuit condition or semi-finished product, be 2 ~ 20kW/m by radiation intensity
2strong illumination at least 30 seconds.
The present invention passes through P-type crystal silicon solar cell finished product or semi-finished product, or the semi-finished product of battery component or battery component use strong illumination a period of time under the state of open circuit, significantly irradiated by high light, a large amount of photo-generated carriers can be produced in P-type crystal silicon body, simultaneously to battery conducting self-heating, accelerate the formation ecological again of boron and oxygen, thus suppress and reduce the photo attenuation of P-type crystal silicon solar cell.
For P-type crystal silicon solar cell semi-finished product, such as can when P-type silicon sheet spread, the step such as during silk screen printing diffusion, by improving existing equipment, increase strong illumination parts, thus realize the photo attenuation significantly reducing P-type crystal silicon solar cell.
For P-type crystal silicon solar module semi-finished product, such as in lamination process, laminating apparatus can be improved, increase strong illumination parts, thus realize the photo attenuation significantly reducing P-type crystal silicon solar module.
As the preferred technical scheme of one of the present invention, in order to be conducive to suitability for industrialized production, the present invention utilizes high light irradiation to reduce the method for P-type crystal silicon solar cell and assembly photo attenuation thereof, to P-type crystal silicon solar cell finished product or semi-finished product, or P-type crystal silicon solar module finished product under open-circuit condition or semi-finished product, be 3 ~ 10kW/m by radiation intensity
2strong illumination 1 ~ 10 minute.
As one of the present invention preferred technical scheme further, in order to more be conducive to suitability for industrialized production, the present invention utilizes high light irradiation to reduce the method for P-type crystal silicon solar cell and assembly photo attenuation thereof, to P-type crystal silicon solar cell finished product or semi-finished product, or P-type crystal silicon solar module finished product under open-circuit condition or semi-finished product, be 5 ~ 10kW/m by radiation intensity
2strong illumination 1 ~ 3 minute.
When radiation intensity is excessive, be easy to the excessive rising causing cell piece temperature, therefore, need the control temperature of cell piece being carried out to appropriateness, as a modification of the present invention: be 5 ~ 10kW/m by radiation intensity
2the strong illumination process of 1 ~ 3 minute in, to P-type crystal silicon solar cell finished product or semi-finished product, or P-type crystal silicon solar module finished product under open-circuit condition or semi-finished product carry out radiating treatment, make its temperature remain on 140 ~ 200 DEG C.Conventional cooling mechanism can be adopted, as blower fan, fan etc. during heat radiation.
In order to make the metal electrode of the P-type crystal silicon solar cell under strong illumination not oxidized; as a further improvement on the present invention: to P-type crystal silicon solar cell finished product or semi-finished product; or P-type crystal silicon solar module finished product under open-circuit condition or semi-finished product pass into nitrogen when carrying out radiating treatment; be in nitrogen protection atmosphere when making it under strong illumination, be oxidized to prevent its metal pole.
The photon energy distribution of high light of the present invention can inspire photo-generated carrier as well in silicon substrate, and wherein the radiation intensity of at least 80% is from the photon be distributed in 285 ~ 1200nm spectral region.
Light intensity light source of the present invention is preferably halogen light source.
For the light source adopted during silk screen printing post-drying, conventional drying oven adopts near-infrared heating fluorescent tube to heat cell piece, its spike wavelength is generally between 0.8 ~ 2 μm, photon (wavelength is less than 1200nm) only less than half can produce photo-generated carrier, other be all converted into heat energy by lattice absorption.And it is shorter to present invention employs wavelength peak, the larger light source of irradiation intensity is as Halogen lamp LED, this light source can inspire more photo-generated carrier, bake out temperature can be made still with before transformation light source to be consistent by the adjustment of cooling system simultaneously, so accelerate the formation that stable state boron oxygen is ecological more greatly, drying oven is possessed dry and reduce the function of crystal silicon solar energy battery photo attenuation simultaneously.Section of the present invention is by improving the problem that just effectively can process the photo attenuation of P-type crystal silicon solar cell to the infrared lamp of drying oven.
The light intensity light source of short wavelength is adopted to replace the heating of existing near-infrared during oven dry, the adjustment of temperature can be realized by cooling mechanism etc., adopt the battery after high light radiation drying and processing of the present invention, compared with battery after drying with routine, short-term and long-term photo attenuation all have and significantly reduce, product quality is improved greatly, adds energy output, there is important economic worth.
For the light source adopted during lamination, general components laminating machine upper and lower bottom plate all adopts oil bath to heat, and does not possess lighting function.The present invention is by slightly making improvements existing equipment, as adopted high-power light source, lower heating plate oil bath heating is replaced to device heats, such as Halogen lamp LED or xenon lamp, the temperature of assembly depends on that battery accepts the radiation intensity of illumination, the heating power of upper cover plate and heat insulation situation.Fig. 5 is that the upper and lower heating plate of hypothesis assembly respectively provides half heat energy, the heat energy loss of 20%, according to blackbody radiation theory (w=σ T
4), the relation of the assembly temperature calculated and light radiation intensity, in this case, 1 sun light intensity (1000W/m
2) system cell piece can either be heated to about 140 DEG C, photo-irradiation treatment effectively can reduce the photo attenuation of P-type crystal silicon solar cell for 2 ~ 20 minutes.
Adopt the laminating machine of the increase high light radiation in the present invention, there is component lamination simultaneously and reduce assembly photo attenuation two functions, effectively improving the quality of product, there is important economic worth.
Therefore, as one of the present invention preferred embodiment, to P-type crystal silicon solar cell finished product or semi-finished product, at baking stage, the mode of heating of drying plant heats for adopting halogen light source.
Meanwhile, as another preferred embodiment of the present invention, the P-type crystal silicon solar module semi-finished product under open-circuit condition, in lamination stages, the mode of heating of at least one heating plate of laminating apparatus heats for adopting halogen light source.
P-type crystal silicon solar cell described in the present invention can for be made up of p type single crystal silicon, P type polysilicon or P type class monocrystalline silicon.
Principle of the present invention is:
First, formation boron and oxygen regeneration state required time depend on and cell piece temperature and exposure intensity, and its relation can be expressed as 1/t=Ae
-Ea/kT, wherein A is the constant be associated with intensity of illumination, and Ea is the ecological again activation energy of boron and oxygen.As shown in Figure 1, heat up and greatly can shorten time of photo-irradiation treatment, lower 60 DEG C of same illumination condition, the treatment effect of 3 minutes when the treatment effect of 20 hours is equal to 180 DEG C.
Secondly, as shown in Figure 3, the present invention utilizes far above a standard solar irradiation intensity (>>1000W/m
2) strong illumination P-type crystal silicon solar cell at goods or finished product, can produce the photoproduction excess carrier of high concentration in P-type crystal silicon sheet matrix, simultaneously the temperature of silicon chip matrix can significantly raise rapidly, accelerates the formation of boron and oxygen ecology again.Therefore, the technical scheme in the present invention, both can reduce light application time, also without the need to being heating of battery specially, more without the need to carrying out the process such as annealing to P type solar cell finished product or assembly.
Finally, the temperature of battery depends on that battery accepts radiation intensity and the heat dispersal situations of illumination.According to blackbody radiation theory, the temperature of battery can pass through w=σ T
4(irradiation energy of w unit are here, σ is Stefan-Boltzmann constant, and T is the temperature of black matrix).In general, while in the energy process absorbing strong illumination, own temperature raises an object, also distribute certain heat by radiation, end temperature reaches balance, becomes a so-called grey body.Therefore, the crystal silicon solar energy battery being in open-circuit condition under strong illumination also can be considered to the relation that a grey body comes estimating battery temperature and light radiation intensity.Fig. 2 be according to 80% the net energy of strong illumination to be absorbed the relation of the silicon wafer-based temperature that calculates of hypothesis and the irradiation intensity heated up by battery.In this case, 2 ~ 3 sun light intensity (2000 ~ 3000W/m
2) illumination system just cell piece can be heated to 100 ~ 200 DEG C.
Compared with prior art, the present invention has following advantage:
(1) technical scheme in the present invention only needs resultant battery sheet is carried out high light process and does not need pre-annealing, and processing procedure is simple, and the technical scheme in the present invention can process the problem of the photo attenuation of P-type crystal silicon solar cell effectively;
(2) be that cell piece heats without the need to arranging a firing equipment specially in the present invention, only cell piece need be positioned within strong illumination scope a period of time (as shown in Figure 3), equipment needed thereby is simple, only needs light intensity light source, easy to implement;
(3) the inventive method have employed the light source of concentration of energy in 285 ~ 1200nm irradiance much larger than 1 sun light intensity, adds the quantity of the non equilibrium carrier excited in silicon substrate, thus accelerates the formation ecological again of boron and oxygen;
(4) the present invention is in conjunction with the lifting of high light and temperature, makes the process time in optimal enforcement example shorten to 1 ~ 3 minute, is applicable to industry large-scale application;
(5) battery in the present invention after high light process, compared with after the battery do not processed or conventional lighting sources process, short-term and long-term photo attenuation all have and significantly reduce, and the quality of product is improved greatly, add energy output, there is important economic worth.
Accompanying drawing explanation
Fig. 1 is the relation of photo-irradiation treatment required time and treatment temperature in the present invention;
Fig. 2 is the relation of battery temperature and radiation of light source intensity in the present invention;
Fig. 3 is the high light illumination apparatus principle schematic that the present invention adopts;
Fig. 4 is the high light illumination apparatus cell piece transfer structure schematic diagram adopted in embodiment of the present invention 1-5, and wherein 1 is light intensity light source, and 2 is P-type crystal silicon solar cell finished product sheet, 3 hot spots formed for light intensity light source irradiation, and 4 is conveyer belt;
Fig. 5 is the relation of battery temperature and radiation of light source intensity in the embodiment of the present invention 6;
Fig. 6 is black body radiation frequency spectrum at different temperatures in the embodiment of the present invention 6, and wavelength peak reduces along with the temperature rising of black matrix;
Fig. 7 is the P-type crystal silicon solar module semi-finished product in the embodiment of the present invention 7, and wherein 5 is glass, and 6 is EVA, and 7 is backboard;
Fig. 8 is the laminating machine structural representation that the employing halogen light source adopted in the embodiment of the present invention 7 substitutes conventional oil bath mode of heating, and wherein, 8 is high temperature resistance diaphragm, 9 is upper room, and 10 is lower room, and 11 is upper heating plate, 12 is lower heating plate, and 13 is silica gel plate, and 14 is solar module;
Fig. 9 is the halogen light source adopted in Fig. 8.
Embodiment
Embodiment 1
This example demonstrates a kind of method utilizing high light irradiation to reduce p type single crystal silicon solar cell light decay, concrete steps are as follows: P-type crystal silicon solar cell finished product sheet be statically placed on the conveyer belt 4 of Fig. 4 display, also other conveyer can be adopted, here do not limit, be only and enumerate, wherein P-type crystal silicon solar cell finished product sheet 2 is conventionally made up of p type single crystal silicon, at three times of sun light intensity (3000W/m
2) light intensity light source 1 metal halid lamp irradiation under (P-type crystal silicon solar cell finished product sheet 2 be arranged in light intensity light source irradiate formed hot spot 3), carry out the illumination of 5 ~ 10 minutes.According to the curve of Fig. 1, the temperature of cell piece is between 150 ~ 200 DEG C.
Through the battery (transformation efficiency 20%) of high light radiation treatment, through the LID test in 5 hours of TUV standard, cell photoelectric transformation efficiency drops to 19.8% from 20%, relative photo attenuation is only 1%, but be >4% without the relative photo attenuation of its LID test in 5 hours of battery of photo-irradiation treatment, concrete data are in table 5.
Embodiment 2
This example demonstrates a kind of method utilizing high light irradiation to reduce P type polysilicon solar cell light decay, concrete steps are as follows: P type polysilicon solar cell finished product sheet is placed in 3 times of sun light intensity (3000W/m
2) metal halogen light irradiation under, cell piece can with a connecting gear as shown in Figure 4 one by one by high light irradiation zone.The speed (S) that cell piece transmits is mated according to the length (L) of required light application time (T) and irradiation zone: S<L/T, carries out the illumination of 2 ~ 5 minutes.According to the curve of Fig. 1, the temperature of cell piece is between 150 ~ 200 DEG C.Wherein cell piece transmits and also can be several and transmit side by side.
Through the battery (transformation efficiency 19%) of high light radiation treatment, through the LID test in 5 hours of TUV standard, cell photoelectric transformation efficiency drops to 18.76% from 19%, relative photo attenuation is only 1.25%, but be >4% without the relative photo attenuation of its LID test in 5 hours of battery of photo-irradiation treatment, concrete data are in table 5.
Embodiment 3
This example demonstrates a kind of method utilizing high light irradiation to reduce P type class monocrystaline silicon solar cell light decay.Concrete steps are as follows: utilize connecting gear described in embodiment 2 that P type class monocrystalline solar cells finished product sheet is placed in 5 times of sun light intensity (5000W/m
2) illumination penetrate under, increase temperature control more simultaneously and regulate (heat radiation) system, such as blower fan etc., make the temperature of cell piece be raised to from room temperature be about 150 DEG C after remain on the illumination that this temperature carries out 1 ~ 3 minute.
Through the battery (transformation efficiency 19.8%) of high light radiation treatment, through the LID test in 5 hours of TUV standard, cell photoelectric transformation efficiency drops to 19.58% from 19.8%, relative photo attenuation is only 1.1%, but be >4% without the relative photo attenuation of its LID test in 5 hours of battery of photo-irradiation treatment, concrete data are in table 5.
Embodiment 4
This example demonstrates a kind of method utilizing high light irradiation to reduce p type single crystal silicon solar cell light decay, concrete steps are as follows: utilize the transmission in embodiment 3 and cooling mechanism that p type single crystal silicon solar cell finished product sheet is placed in 20 times of sun light intensity (20000W/m
2) illumination penetrate under; regulate in temperature control on the basis of (heat radiation) system simultaneously and increase nitrogen air knife blowing function again; the cell piece under strong illumination is made to be in nitrogen protection atmosphere; in order to prevent cell piece metal anodes oxidize; carry out the illumination of 30 seconds, the temperature of cell piece is between 150 ~ 200 DEG C simultaneously.
Through the battery (transformation efficiency 20%) of high light radiation treatment, through the LID test in 5 hours of TUV standard, cell photoelectric transformation efficiency drops to 19.84% from 20%, relative photo attenuation is only 0.8%, but be >4% without the relative photo attenuation of its LID test in 5 hours of battery of photo-irradiation treatment, concrete data are in table 5.
Embodiment 5
This example demonstrates a kind of method utilizing high light irradiation to reduce p type single crystal silicon solar components light decay, concrete steps are as follows: utilize the transmission cooling mechanism in embodiment 3 p type single crystal silicon solar components to be placed in 3 times of sun light intensity (3000W/m
2) illumination penetrate under, increase temperature control more simultaneously and regulate (heat radiation) system, such as blower fan etc., make the temperature of assembly be raised to from room temperature be about 100 DEG C after remain on the illumination that this temperature carries out 10 ~ 30 minutes.
Through the assembly (transformation efficiency 18%) of high light radiation treatment, through the LID test in 5 hours of TUV standard, cell photoelectric transformation efficiency drops to 17.73% from 18%, relative photo attenuation is only 1.5%, but be >4% without the relative photo attenuation of its LID test in 5 hours of battery of photo-irradiation treatment, concrete data are in table 5.
In table 1 embodiment 1 ~ 5, photo-irradiation treatment reduces the experimental data of light decay
Embodiment 6
This example demonstrates a kind of method utilizing high light irradiation to reduce p type single crystal silicon solar cell semi-finished product light decay, spread for through containing, passivation, the p type single crystal silicon solar cell semi-finished product that the operations such as silk screen printing are made, by the chain type drying oven of routine is improved, as shown in Figure 4, conventional infrared heating fluorescent tube in drying oven is replaced with the higher light source xenon source of internal temperature makes its wavelength peak be displaced to about 500nm to shortwave direction, Fig. 6 is black body radiation frequency spectrum at different temperatures, wavelength peak reduces along with the temperature rising of black matrix, P-type crystal silicon solar cell semi-finished product are placed in the chain type drying oven of Fig. 4 display, also tower stove can be adopted, here be only and enumerate, it is not the restriction of drying oven type, the drying oven of this area routine through in the present invention set up the improvement of halogen light source after can use, at three times of sun light intensity (3000W/m
2) under irradiation, carry out the oven dry of 5 ~ 10 minutes.According to the curve in Fig. 5, the temperature of cell piece is between 150 ~ 200 DEG C, through the battery (transformation efficiency 20%) of high light radiation treatment, the relative photo attenuation of standard LID test in 5 hours is <0.5%, but is >4% without the relative photo attenuation of its LID test in 5 hours of battery of photo-irradiation treatment.
Embodiment 7
This example demonstrates a kind of method utilizing high light irradiation to reduce p type single crystal silicon solar module semi-finished product light decay, the half-finished structure of solar module as shown in Figure 7, comprise glass 5, multiple P-type crystal silicon solar cell finished product sheet 2 of series winding, EVA 6 and backboard 7.
Crystal silicon solar energy battery needs the assembly becoming to have long-term reliability by welding and laminates.Vacuum laminator a kind ofly carries out multilayer material to be pressed into a kind of plant equipment with certain rigid unitary under vacuum.Vacuum laminator is applied on solar module packing producing line, is referred to as solar module encapsulated layer press.Pass through laminating technology, by toughened glass, EVA, series winding cell piece, EVA and backboard materials such as () TPT or PET press together, as shown in Figure 7, laminating machine main working process comprises: (1) vacuumizes: lower room vacuumizes, and upper room vacuumizes; (2) pressurize: lower room vacuumizes, the inflation of upper room; (3) lamination: lower room vacuumizes, upper room stops inflation; (4) uncap: the inflation of lower room, upper room vacuumizes.
The present invention improves laminating machine, general components laminating machine upper and lower bottom plate all adopts oil bath to heat, do not possess lighting function, the present invention is by being transformed into halogen lamp tube heating by heating plate oil bath heating under crystalline silicon component laminating machine, and average lamp intensity is (2000W/m
2).Specifically as shown in Figure 8, comprise high temperature resistance diaphragm 8, upper room 9, lower room 10, upper heating plate 11, lower heating plate 12, silica gel plate 13 and solar module 14, halogen light source is provided with in upper heating plate 11 and lower heating plate 12, as shown in Figure 9, assembly sensitive surface down, adopting high temperature resistance diaphragm to be covered on assembly glass makes light to reach battery surface, and conveniently component lamination process adjustments system temperature makes the temperature of assembly be about 140 DEG C, carries out the illumination lamination treatment of 15 minutes.The electricity conversion of the assembly after lamination is still 19%, but its relative photo attenuation of 5 hours drops to 0.5% from 4%.
Embodiment 8
As different from Example 7, all adopt oil bath to heat general components laminating machine upper and lower bottom plate, be revised as laminating machine upper and lower bottom plate and all adopt halogen lamp tube to heat, radiation intensity is 3kW/m
2, strong illumination is 10min.
The present invention will be described to enumerate a part of specific embodiment above, be necessary to herein means out be above specific embodiment only for the invention will be further described, do not represent limiting the scope of the invention.Some nonessential amendments that other people make according to the present invention and adjustment still belong to protection scope of the present invention.
Claims (10)
1. the method utilizing high light irradiation to reduce P-type crystal silicon solar cell and assembly photo attenuation thereof, it is characterized in that: to P-type crystal silicon solar cell finished product or semi-finished product, or P-type crystal silicon solar module finished product under open-circuit condition or semi-finished product, be 2 ~ 20kW/m by radiation intensity
2strong illumination at least 30 seconds.
2. the method utilizing high light irradiation to reduce P-type crystal silicon solar cell and assembly photo attenuation thereof according to claim 1, it is characterized in that: to P-type crystal silicon solar cell finished product or semi-finished product, or P-type crystal silicon solar module finished product under open-circuit condition or semi-finished product, be 3 ~ 10kW/m by radiation intensity
2strong illumination 1 ~ 10 minute.
3. the method utilizing high light irradiation to reduce P-type crystal silicon solar cell and assembly photo attenuation thereof according to claim 2, it is characterized in that: to P-type crystal silicon solar cell finished product or semi-finished product, or P-type crystal silicon solar module finished product under open-circuit condition or semi-finished product, be 5 ~ 10kW/m by radiation intensity
2strong illumination 1 ~ 3 minute.
4. the method utilizing high light irradiation to reduce P-type crystal silicon solar cell and assembly photo attenuation thereof according to claim 3, is characterized in that: be 5 ~ 10kW/m by radiation intensity
2the strong illumination process of 1 ~ 3 minute in, to P-type crystal silicon solar cell finished product or semi-finished product, or P-type crystal silicon solar module finished product under open-circuit condition or semi-finished product carry out radiating treatment, make its temperature remain on 140 ~ 200 DEG C.
5. the method utilizing high light irradiation to reduce P-type crystal silicon solar cell and assembly photo attenuation thereof according to claim 4; it is characterized in that: to P-type crystal silicon solar cell finished product or semi-finished product; or P-type crystal silicon solar module finished product under open-circuit condition or semi-finished product pass into nitrogen when carrying out radiating treatment; be in nitrogen protection atmosphere when making it under strong illumination, be oxidized to prevent its metal pole.
6. the high light irradiation that utilizes according to any one of claim 1-5 reduces the method for P-type crystal silicon solar cell and assembly photo attenuation thereof, it is characterized in that: the photon energy distribution of described high light can inspire photo-generated carrier in silicon substrate, and wherein the radiation intensity of at least 80% is from the photon be distributed in 285 ~ 1200nm spectral region.
7. the method utilizing high light irradiation to reduce P-type crystal silicon solar cell and assembly photo attenuation thereof according to claim 6, is characterized in that: described light intensity light source is halogen light source.
8. the method utilizing high light irradiation to reduce P-type crystal silicon solar cell and assembly photo attenuation thereof according to claim 7, it is characterized in that: to P-type crystal silicon solar cell finished product or semi-finished product, at baking stage, the mode of heating of drying plant heats for adopting halogen light source.
9. the method utilizing high light irradiation to reduce P-type crystal silicon solar cell and assembly photo attenuation thereof according to claim 7, it is characterized in that: the P-type crystal silicon solar module semi-finished product under open-circuit condition, in lamination stages, the mode of heating of at least one heating plate of laminating apparatus heats for adopting halogen light source.
10. the method utilizing high light irradiation to reduce P-type crystal silicon solar cell and assembly photo attenuation thereof according to claim 6, is characterized in that: described P-type crystal silicon solar cell is made up of p type single crystal silicon, P type polysilicon or P type class monocrystalline silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510095296.4A CN104868010B (en) | 2015-03-03 | 2015-03-03 | A kind of method that utilization high light irradiation reduces P-type crystal silicon solar cell and its component photo attenuation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510095296.4A CN104868010B (en) | 2015-03-03 | 2015-03-03 | A kind of method that utilization high light irradiation reduces P-type crystal silicon solar cell and its component photo attenuation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104868010A true CN104868010A (en) | 2015-08-26 |
| CN104868010B CN104868010B (en) | 2017-06-13 |
Family
ID=53913709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510095296.4A Active CN104868010B (en) | 2015-03-03 | 2015-03-03 | A kind of method that utilization high light irradiation reduces P-type crystal silicon solar cell and its component photo attenuation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104868010B (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105261677A (en) * | 2015-11-18 | 2016-01-20 | 浙江晶科能源有限公司 | Method for rapid light-induced degradation of solar cell piece |
| CN106449863A (en) * | 2015-08-06 | 2017-02-22 | 上海凯世通半导体股份有限公司 | Processing method of photovoltaic device |
| CN107039540A (en) * | 2015-12-18 | 2017-08-11 | Lg电子株式会社 | The method for manufacturing solar cell |
| CN107452828A (en) * | 2017-08-11 | 2017-12-08 | 东方环晟光伏（江苏）有限公司 | Suppress the apparatus and method of solar components light decay |
| CN107731966A (en) * | 2017-11-29 | 2018-02-23 | 华为数字技术（苏州）有限公司 | A kind of method for packing of photovoltaic module |
| CN108091726A (en) * | 2017-12-11 | 2018-05-29 | 浙江晶科能源有限公司 | A kind of hot activation processing method of N-type silicon solar cell |
| CN108963034A (en) * | 2018-07-26 | 2018-12-07 | 浙江晶科能源有限公司 | Restore the method for efficiency after a kind of boron-doping single crystal battery light decay |
| CN109427931A (en) * | 2017-09-04 | 2019-03-05 | 通威太阳能（成都）有限公司 | Solar battery sheet reduces light decay technique |
| US10461213B2 (en) | 2015-12-18 | 2019-10-29 | Lg Electronics Inc. | Method of manufacturing solar cell |
| CN110783425A (en) * | 2019-09-27 | 2020-02-11 | 南通苏民新能源科技有限公司 | Method for reducing photoinduced attenuation defect of solar cell module |
| CN111710747A (en) * | 2020-05-18 | 2020-09-25 | 中威新能源(成都)有限公司 | Manufacturing method of silicon heterojunction solar cell module |
| CN111756326A (en) * | 2020-06-10 | 2020-10-09 | 帝尔激光科技(无锡)有限公司 | Solar cell rapid light attenuation method and device |
| CN113241390A (en) * | 2021-04-28 | 2021-08-10 | 天津爱旭太阳能科技有限公司 | Light injection method and system for crystalline silicon solar cell and cell |
| CN113257951A (en) * | 2021-03-30 | 2021-08-13 | 苏州联诺太阳能科技有限公司 | Preparation method of sliced battery and laser equipment |
| WO2023048637A3 (en) * | 2021-08-27 | 2023-07-06 | Etavolt Pte Ltd | Regeneration of degraded silicon photovoltaic modules: indoor and outdoor solutions |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101478017A (en) * | 2009-01-09 | 2009-07-08 | 中电电气（南京）光伏有限公司 | Light induced attenuation characteristic improving method for crystalline silicon solar cell tablet and dedicated apparatus |
| CN103681964A (en) * | 2013-11-29 | 2014-03-26 | 奥特斯维能源（太仓）有限公司 | Method for restoring damped efficiency of solar cells |
| CN104078403A (en) * | 2014-07-16 | 2014-10-01 | 常州天合光能有限公司 | Mass production device capable of rapidly reducing light-induced degradation of crystalline silicon solar cells |
| CN104201242A (en) * | 2014-09-03 | 2014-12-10 | 常州天合光能有限公司 | Boron doped P type monocrystalline silicon battery light attenuation improvement device and using method thereof |
-
2015
- 2015-03-03 CN CN201510095296.4A patent/CN104868010B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101478017A (en) * | 2009-01-09 | 2009-07-08 | 中电电气（南京）光伏有限公司 | Light induced attenuation characteristic improving method for crystalline silicon solar cell tablet and dedicated apparatus |
| CN103681964A (en) * | 2013-11-29 | 2014-03-26 | 奥特斯维能源（太仓）有限公司 | Method for restoring damped efficiency of solar cells |
| CN104078403A (en) * | 2014-07-16 | 2014-10-01 | 常州天合光能有限公司 | Mass production device capable of rapidly reducing light-induced degradation of crystalline silicon solar cells |
| CN104201242A (en) * | 2014-09-03 | 2014-12-10 | 常州天合光能有限公司 | Boron doped P type monocrystalline silicon battery light attenuation improvement device and using method thereof |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449863A (en) * | 2015-08-06 | 2017-02-22 | 上海凯世通半导体股份有限公司 | Processing method of photovoltaic device |
| CN105261677A (en) * | 2015-11-18 | 2016-01-20 | 浙江晶科能源有限公司 | Method for rapid light-induced degradation of solar cell piece |
| CN105261677B (en) * | 2015-11-18 | 2017-08-25 | 浙江晶科能源有限公司 | A kind of method of the quick photo attenuation of solar cell piece |
| CN107039540A (en) * | 2015-12-18 | 2017-08-11 | Lg电子株式会社 | The method for manufacturing solar cell |
| US10461213B2 (en) | 2015-12-18 | 2019-10-29 | Lg Electronics Inc. | Method of manufacturing solar cell |
| CN107452828A (en) * | 2017-08-11 | 2017-12-08 | 东方环晟光伏（江苏）有限公司 | Suppress the apparatus and method of solar components light decay |
| CN109427931A (en) * | 2017-09-04 | 2019-03-05 | 通威太阳能（成都）有限公司 | Solar battery sheet reduces light decay technique |
| CN107731966A (en) * | 2017-11-29 | 2018-02-23 | 华为数字技术（苏州）有限公司 | A kind of method for packing of photovoltaic module |
| CN107731966B (en) * | 2017-11-29 | 2020-03-31 | 华为数字技术（苏州）有限公司 | Packaging method of photovoltaic module |
| CN108091726A (en) * | 2017-12-11 | 2018-05-29 | 浙江晶科能源有限公司 | A kind of hot activation processing method of N-type silicon solar cell |
| CN108963034A (en) * | 2018-07-26 | 2018-12-07 | 浙江晶科能源有限公司 | Restore the method for efficiency after a kind of boron-doping single crystal battery light decay |
| CN108963034B (en) * | 2018-07-26 | 2020-06-26 | 浙江晶科能源有限公司 | Method for recovering efficiency of boron-doped single crystal battery after light decay |
| CN110783425A (en) * | 2019-09-27 | 2020-02-11 | 南通苏民新能源科技有限公司 | Method for reducing photoinduced attenuation defect of solar cell module |
| CN111710747A (en) * | 2020-05-18 | 2020-09-25 | 中威新能源(成都)有限公司 | Manufacturing method of silicon heterojunction solar cell module |
| CN111756326A (en) * | 2020-06-10 | 2020-10-09 | 帝尔激光科技(无锡)有限公司 | Solar cell rapid light attenuation method and device |
| CN113257951A (en) * | 2021-03-30 | 2021-08-13 | 苏州联诺太阳能科技有限公司 | Preparation method of sliced battery and laser equipment |
| CN113241390A (en) * | 2021-04-28 | 2021-08-10 | 天津爱旭太阳能科技有限公司 | Light injection method and system for crystalline silicon solar cell and cell |
| WO2023048637A3 (en) * | 2021-08-27 | 2023-07-06 | Etavolt Pte Ltd | Regeneration of degraded silicon photovoltaic modules: indoor and outdoor solutions |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104868010B (en) | 2017-06-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104868010B (en) | A kind of method that utilization high light irradiation reduces P-type crystal silicon solar cell and its component photo attenuation | |
| JP6201157B2 (en) | Manufacturing method of solar cell module | |
| CN103650170B (en) | Process for treating a heterojunction photovoltaic cell | |
| CN101478017B (en) | Light induced attenuation characteristic improving method for crystalline silicon solar cell tablet and dedicated apparatus | |
| JP6139600B2 (en) | Solar cell post-processing equipment | |
| CN102593262B (en) | Diffusion method for solace cell with polycrystalline silicon selective emitter | |
| CN107731966B (en) | Packaging method of photovoltaic module | |
| CN109004064B (en) | Manufacturing method of P-type battery piece | |
| JP2007294830A (en) | Manufacturing method of solar cell module | |
| CN104505426A (en) | Method and device for improving light degradation of crystalline silicon solar cell module | |
| CN102637778A (en) | PN junction diffusion method | |
| CN103715308A (en) | Low-temperature varying temperature diffusion technology of polycrystalline silicon solar cell | |
| CN112768564B (en) | Light injection passivation method for Topcon battery | |
| TW202023063A (en) | A method for improving the performance of a heterojunction solar cell | |
| CN102522449A (en) | Phosphorus diffusion method for preparing silicon solar battery | |
| CN206584944U (en) | A kind of anti-light stove that declines | |
| CN206098426U (en) | Be used for thin -film solar cell continuous annealer | |
| Ye et al. | UV-induced degradation in multicrystalline PERC cell and module | |
| CN111554755A (en) | Method for metalizing electrode of solar cell | |
| CN113594300B (en) | Laser scribing method for light-transmitting power generation glass | |
| CN202255834U (en) | Device for quickening photoinduced attenuation of solar battery with crystalline silicon | |
| CN102085740A (en) | Short circuit-proof electric heating laminating machine | |
| CN105405926B (en) | A kind of silicon heterogenous solar cell, its method for annealing and preparation method thereof | |
| Schneller et al. | Overview of laser processing in solar cell fabrication | |
| CN102290479A (en) | CdZnTe/monocrystalline silicon laminated solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |