CN104810379B - image sensor - Google Patents
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- CN104810379B CN104810379B CN201510223707.3A CN201510223707A CN104810379B CN 104810379 B CN104810379 B CN 104810379B CN 201510223707 A CN201510223707 A CN 201510223707A CN 104810379 B CN104810379 B CN 104810379B
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Abstract
A kind of image sensor, it include: semiconductor substrate, the semiconductor substrate includes intermediate region and the fringe region around intermediate region, there are several first photosensitive areas in ranks arrangement in the semiconductor substrate of the intermediate region, there are several second photosensitive areas, and the size of the second photosensitive area of fringe region is greater than the size of the first photosensitive area of intermediate region in the semiconductor substrate of the fringe region；Lenticule in semiconductor substrate, the lenticule includes several first lenticules on semiconductor substrate intermediate region and several second lenticules on semiconductor substrate edge region, first lenticule is located above corresponding first photosensitive area, second lenticule is located above corresponding second photosensitive area, and the size of the second lenticule on semiconductor substrate edge region is greater than the size of the first lenticule on semiconductor substrate intermediate region.Image sensor of the invention improves the image quality of fringe region.
Description
Technical field
The present invention relates to field of image sensors, in particular to a kind of image sensor of optimal imaging.
Background technique
With the fast development of electrical technology and electronic technology, the modern times of more and more image application sensor technologies are mobile
Electronic product, such as smart phone, digital camera, laptop are developed rapidly and are popularized.Currently, people are in mobile phone etc.
Consumption proportion on electronic product is higher and higher, and the quality and personal experience to product require increasingly harsher.Present electronics produces
Product all have photograph and camera function, and it is even higher to develop to 500,8,000,000 by original hundreds of thousands for pixel.Image sensor
As the main component of electronic product imaging, the requirement to its image quality is also higher and higher.
Image sensor refers to the device for converting optical signals to electric signal.Image sensor includes charge-coupled device
(Charge Coupled Device, abbreviation CCD) and complementary metal oxide semiconductor (Complementary Metal-
Oxide-Semiconductor Transistor, abbreviation CMOS) image sensor dice.CMOS image sensor and traditional
Ccd sensor compares the low-power consumption that has, low cost and it is compatible with CMOS technology the features such as, therefore obtain more and more extensive answer
With.Present CMOS image sensor is applied not only to consumer electronics field, such as digital camera, in mobile phone camera and video camera,
And in automotive electronics, monitoring, the fields such as biotechnology and medicine are also widely used.
For CMOS image sensor, how to improve the quality of image be in designing and manufacturing one it is very important because
Element.
Existing image sensor structure includes: semiconductor substrate, has several photosensitive areas, institute in the semiconductor substrate
Several photosensitive areas are stated to be arranged in array；Several lenticules in semiconductor substrate, corresponding several lenticules are also in
Array arrangement.
But the performance of existing image sensor is still to be improved.
Summary of the invention
Problems solved by the invention is how to improve the image quality of image sensor.
To solve the above problems, the present invention provides a kind of image sensor, comprising:
Semiconductor substrate, the semiconductor substrate include intermediate region and the fringe region around intermediate region, it is described in
Between region semiconductor substrate in there are several first photosensitive areas in ranks arrangement, in the semiconductor substrate of the fringe region
With several second photosensitive areas, and the size of the second photosensitive area of fringe region is greater than the ruler of the first photosensitive area of intermediate region
It is very little；
Lenticule in semiconductor substrate, the lenticule include several on semiconductor substrate intermediate region
First lenticule and several second lenticules on semiconductor substrate edge region, several second on fringe region are micro-
Several first lenticules of the lens-ring on intermediate region, the first lenticule are located above corresponding first photosensitive area, and second is micro-
Lens are located above corresponding second photosensitive area, and the size of the second lenticule on semiconductor substrate edge region is greater than and partly leads
The size of the first lenticule on body substrate intermediate region.
Optionally, the size of the first photosensitive area of each of described intermediate region is identical, every on the intermediate region
The size of one the first lenticule is identical.
Optionally, the fringe region includes several annular sections for surrounding intermediate region, is had on each annular section
Identical several second lenticules of size have identical several second photosensitive areas of size in each annular section.
Optionally, the annular section quantity is 1.
Optionally, annular section quantity >=2, from the direction in intermediate region points toward edge region, different ring-shaped areas
The size of the second lenticule on domain is gradually increased.
Optionally, from the size of the second photosensitive area in the direction in intermediate region points toward edge region, different annular sections
It is gradually increased
Optionally, the annular section is >=3, and the ruler of the second lenticule on the adjacent annular section of at least two
It is very little identical, and the size of the second lenticule on the annular section of intermediate region is less than the ring-shaped area far from intermediate region
The size of the second lenticule on domain.
Optionally, the size of the second photosensitive area in the adjacent annular section of at least two is identical, and close to intermediate region
The size of the second lenticule on annular section is less than the size of the second lenticule on the annular section far from intermediate region.
Optionally, the size of first lenticule and the second lenticule includes diameter and height, or including diameter or
Highly, or including volume.
Optionally, the size of second lenticule is greater than the diameter that the size of the first lenticule includes: the second lenticule
Greater than the diameter of the first lenticule, and the height of the second lenticule is greater than the height of the first lenticule.
Optionally, the size of second photosensitive area and the size of the first photosensitive area include length and width, or including
Length or width, or including area.
Compared with prior art, technical solution of the present invention has the advantage that
Image sensor of the invention includes semiconductor substrate, and the semiconductor substrate includes intermediate region and surround intermediate
The fringe region in region has several first photosensitive areas in ranks arrangement in the semiconductor substrate of the intermediate region, described
There are several second photosensitive areas, and the size of the second photosensitive area of fringe region is greater than centre in the semiconductor substrate of fringe region
The size of first photosensitive area in region；Lenticule in semiconductor substrate, the lenticule include being located at semiconductor substrate
Several first lenticules on intermediate region and several second lenticules on semiconductor substrate edge region, first is micro-
Lens are located above corresponding first photosensitive area, and the second lenticule is located above corresponding second photosensitive area, and semiconductor substrate
The size of the second lenticule on fringe region is greater than the size of the first lenticule on semiconductor substrate intermediate region.Marginal zone
The size of the lenticule in domain is greater than the size of the lenticule of intermediate region, thus the lenticule of fringe region can receive more
Incident light, the received incident light of the photosensitive area of corresponding fringe region increase, thus improve or eliminate edge imaging distortion and
The phenomenon that deformation, also, the size of the second photosensitive area of fringe region is greater than the size of the first photosensitive area of intermediate region, so that shadow
As sensors edges photosensitive area photosensitive area increase, more incident lights can be received, further improve or eliminate edge at
The distortion and deformation of picture improve the quality of image sensor imaging.
Further, quantity >=2 of the annular section in the fringe region have size identical on each annular section
Several second lenticules, and from the second lenticule on the direction in intermediate region points toward edge region, different annular sections
Size be gradually increased；Correspondingly, there are identical several second photosensitive areas of size, and from middle area in each annular section
The size in the direction in domain points toward edge region, the second photosensitive area in different annular sections is gradually increased, so that second is micro-
The amount of increase received incident light of the mirror from the direction in intermediate region points toward edge region gradually, corresponding second photosensitive area
The amount of the received incident light of increase gradually, to realize the gradually improvement to edge regional imaging quality (further away from intermediate region
The problems such as image quality is poorer or is distorted, deforms can be more serious), improve the uniformity of image quality.
Further, quantity >=3 of the annular section in the fringe region have size identical on each annular section
Several second lenticules, and the size of the second lenticule on adjacent at least two annular section is identical, and close to middle area
The size of the second lenticule on the annular section in domain is less than the ruler of the second lenticule on the annular section far from intermediate region
It is very little, correspondingly, there are identical several second photosensitive areas of size, in adjacent at least two annular section in each annular section
The second photosensitive area size it is identical, and close to intermediate region annular section on the second lenticule size be less than far from
Between region annular section on the second lenticule size, and close to intermediate region ring on the second lenticule size it is small
In the size of the second lenticule on the ring far from intermediate region, so that the second lenticule is from intermediate region points toward edge region
The amount of the received incident light of increase of direction gradually, the amount of the received incident light of increase of corresponding second photosensitive area also gradually,
To realize to the gradually improvement of edge regional imaging quality (further away from intermediate region image quality is poorer or distortion, deformation etc.
Problem can be more serious), improve the uniformity of image quality.
Detailed description of the invention
FIG. 1 to FIG. 2 is the structural schematic diagram of one embodiment of the invention image sensor；
Fig. 3 is the structural schematic diagram of another embodiment of the present invention image sensor；
Fig. 4 is the structural schematic diagram of further embodiment of this invention image sensor.
Specific embodiment
As described in the background art, the performance of existing image sensor is still to be improved, such as existing image sensor
There are still edge imagings to be easily distorted, the problems such as deforming.
The study found that in microlens designs, all lenticules width having the same and height, thus it is each micro-
Mirror is also identical to the response characteristic of light, but in actual use, due to being influenced by factors such as the frames encapsulated, edge
The incident light that lenticule receives is fewer than the incident light that central lenticule receives, therefore causes image photosensitive area edge imaging easy
Distortion and metaboly when being distorted, deformation, and being imaged closer to fringe region image photosensitive area is more serious.
For this purpose, the size of the lenticule of fringe region is greater than intermediate region the present invention provides a kind of image sensor
The size of lenticule, thus the lenticule of fringe region can receive more incident lights, the photosensitive area of corresponding fringe region
Received incident light increases, thus improves or eliminate the phenomenon that edge imaging is distorted and deforms.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.When describing the embodiments of the present invention, for purposes of illustration only, schematic diagram can disobey general proportion
Make partial enlargement, and the schematic diagram is example, should not limit the scope of the invention herein.In addition, in reality
It should include the three-dimensional space of length, width and depth in production.
FIG. 1 to FIG. 2 is the structural schematic diagram of one embodiment of the invention image sensor.
It is the schematic diagram of the section structure of the Fig. 2 along the direction cutting line AB incorporated by reference to reference Fig. 1 and Fig. 2, Fig. 1, the image passes
Sensor includes:
Semiconductor substrate 200, the semiconductor substrate 200 include intermediate region 21 and the marginal zone around intermediate region 21
Domain 22, in several first photosensitive areas 201 of ranks arrangement, the marginal zone in the semiconductor substrate 200 of the intermediate region 21
There is several second photosensitive areas 202, and the size of the second photosensitive area 202 of fringe region 22 in the semiconductor substrate 200 in domain 22
Greater than the size of the first photosensitive area 201 of intermediate region 21；
Lenticule in semiconductor substrate 200, the lenticule include being located on semiconductor substrate intermediate region 21
Several first lenticules 205 and several second lenticules 206 on semiconductor substrate edge region 22, fringe region
Several first lenticules of several second lenticules 206 on intermediate region on 22, the first lenticule 205 is located at corresponding
First photosensitive area, 201 top, the second lenticule 206 are located at corresponding second photosensitive area, 202 top, and semiconductor substrate edge area
The size of the second lenticule 206 on domain 22 is greater than the size of the first lenticule 205 on semiconductor substrate intermediate region 21.
The semiconductor substrate 200 can be silicon substrate, germanium substrate, silicon-on-insulator substrate (SOI substrate), quartz lining
Bottom, ceramic substrate, glass substrate.
In embodiment, the lenticule (the first lenticule 205 and the second lenticule 206) and semiconductor substrate 200 it
Between include: the colored filter 203 in semiconductor substrate 200 and the buffer layer on colored filter 203 204.
Colored filter 203 accurately selection be intended to by small range wave band light wave, and reflect away other be not intended to by
Wave band.
The buffer layer 204 is used as lenticule and 203 buffer layer of colored filter, and the buffer layer 204 is first micro-
The formation of mirror 205 and the second lenticule 206 provides flat surface.
The semiconductor substrate 200 includes intermediate region 21 and the fringe region around the intermediate region 21, semiconductor
The quantity of the intermediate region 21 and fringe region 22 on substrate 200 at least >=1, in the present embodiment, with semiconductor substrate
An intermediate region 21 on 200 and a fringe region 22 around the intermediate region 21 are used as example.
The photosensitive area of image sensor includes several first photosensitive areas 201 and the second photosensitive area 202, the first photosensitive area 201
The incident light after the first lenticule 205 and the convergence of the second lenticule 206 is received respectively with the second photosensitive area 202, and light occurs
Electrotransformation effect forms photo-generated carrier.
First lenticule 205 is located at corresponding first photosensitive area, 201 top, and second lenticule 206 is located at phase
202 top of the second photosensitive area answered, the arrangement mode of several first lenticules 205 and beneath several first photosensitive areas 201
Arrangement mode is identical, the arrangement mode phase of the arrangement mode of several second lenticules 206 and beneath several second photosensitive areas 202
Together.
There are several first photosensitive areas 201, several first photosensitive areas 201 are in the semiconductor substrate 200 of intermediate region 21
Ranks arrangement, and the size of first photosensitive area of each of intermediate region 21 201 is identical, corresponding intermediate region 21 it is several
There are several first lenticules 205, several first lenticules 205 are arranged in ranks, and intermediate region 21 on first photosensitive area 201
On several first lenticules 205 size it is identical, several second photosensitive areas are formed in the semiconductor substrate of fringe region 22
202, the first photosensitive area 201 that several second photosensitive areas 202 are formed around intermediate region 21, the corresponding fringe region 22
There are several second lenticules 206 on several second photosensitive areas 202.
The fringe region 22 includes several (>=1) annular sections for surrounding intermediate region, is had on each annular section
There are identical several second lenticules 206 of size, there are identical several second photosensitive areas 202 of size in each annular section.
In one embodiment, quantity >=2 of the annular section in the fringe region 22 have on each annular section
Identical several second lenticules of size, and from the direction in intermediate region points toward edge region, different annular sections
The size of two lenticules is gradually increased；Correspondingly, there are identical several second photosensitive areas of size in each annular section, and
From the direction in intermediate region points toward edge region, the size of the second photosensitive area in different annular sections is gradually increased, so that
The amount of increase received incident light of second lenticule from the direction in 21 points toward edge region 22 of intermediate region gradually, accordingly
The amount of the received incident light of increase of second photosensitive area also gradually, to realize the gradually improvement to edge regional imaging quality (more
The problems such as separate intermediate region image quality is poorer or is distorted, deforms can be more serious), improve the uniformity of image quality.Tool
Body, several annular sections successively include the first annular section for surrounding intermediate region 21, around the first ring-shaped area from inside to outside
Second annular section in domain ..., around N-1 annular section N (N >=2) annular section, the first annular section, second
Annular section ..., all have several second lenticules on N-1 annular section, N (N >=2) annular section, from middle area
The size in the direction in domain points toward edge region, the second lenticule on different annular sections is gradually increased, i.e. the first annular section
On the second lenticule size less than second on the size of the second lenticule on the second annular section, the second annular section
The size of lenticule be less than the second lenticule on third annular section size ..., it is second on N-1 annular section micro-
Size of the size of lens less than the second lenticule on N annular section；Correspondingly, the first annular section, the second ring-shaped area
Domain ..., all have several second photosensitive areas in N-1 annular section, N (N >=2) annular section, be directed toward from intermediate region
The size in the direction of fringe region, the second photosensitive area in different annular sections is gradually increased, i.e. and in the first annular section
The size of two photosensitive areas is less than the second photosensitive area in the size of the second photosensitive area in the second annular section, the second annular section
Size be less than the second photosensitive area in third annular section size ..., the second photosensitive area in N-1 annular section
Size of the size less than the second photosensitive area in N annular section.
The arrangement mode of several second lenticules on each annular section can be in rectangular ring arrangement, circular annular form
Arrangement or irregular arrangement, or may be other suitable arrangement modes.The second lenticule on different annular sections
Arrangement mode can be identical or different, the arrangement modes of several second photosensitive areas in an annular section and the annular section
The arrangement mode of several second lenticules of top is identical.
In a specific embodiment, it is carried out referring to FIG. 2, including two annular sections as example using fringe region 22
Illustrate, fringe region 22 includes the first annular section 11 and the second annular section 12, and the first annular section 11 is around intermediate region
21, the second annular section 12 has several second lenticule 206a on the first annular section 11, the first annular section 11, the
There is several second lenticule 206b, and the size of the second lenticule 206a on the first annular section 11 on two annular sections 12
Less than the size of the second lenticule 206b on the second annular section 12；Correspondingly, having several second in the first annular section 11
Photosensitive area 202a has several second photosensitive area 202b in the second annular section 12, and the second sense in the first annular section 11
Size of the size of light area 202a less than the second photosensitive area 202b in the second annular section 12.On first annular section 11
Several second lenticule 206b of 12 top several second lenticule 206a and the second annular section of side are in rectangular ring
It arranges, correspondingly, several in several second photosensitive area 202a and the second annular section 12 in first annular section 11
Second photosensitive area 202b is also to arrange in rectangular ring, and straight-flanked ring arrangement optimizes the second photosensitive area 202a and the second lenticule
The space layout of 206b makes being more evenly distributed for photosensitive area and lenticule, is relatively beneficial to improve the image quality of fringe region.
In another embodiment, quantity >=3 of the annular section in the fringe region 22 have on each annular section
There are identical several second lenticules of size, and the size of the second lenticule on adjacent at least two annular section is identical, and
The size of the second lenticule on the annular section of intermediate region is less than second on the annular section far from intermediate region
The size of lenticule；Correspondingly, having identical several second photosensitive areas of size, adjacent at least two in each annular section
The size of the second photosensitive area in annular section is identical, and the size of the second lenticule on the annular section of intermediate region
Less than the size of the second lenticule on the annular section far from intermediate region, and second on the ring of intermediate region is micro-
The size of mirror is less than the size of the second lenticule on the ring far from intermediate region, so that the second lenticule is from intermediate region 21
The amount of the received incident light of increase of the direction in points toward edge region 22 gradually, the increase of corresponding second photosensitive area also gradually connect
The amount of the incident light of receipts, (further away from intermediate region, image quality is poorer for the gradually improvement with realization to edge regional imaging quality
Or the problems such as distortion, deformation, can be more serious), improve the uniformity of image quality.Specifically, several annular sections are from inside to outside
It successively include the first annular section for surrounding intermediate region 21, the second annular section for surrounding the first annular section, around second
The third annular section of annular section ..., around N-1 annular section N (N >=3) annular section, the first ring-shaped area
Domain, the second annular section, third annular section ..., N-1 annular section, all have on N (N >=2) annular section it is several
Second lenticule, the first annular section, the second annular section, third annular section ..., N-1 annular section, N (N >=3)
The size of the second lenticule on the adjacent annular section of at least two in annular section is identical, and the ring close to intermediate region
The size of the second lenticule on shape region is less than the size of the second lenticule on the annular section far from intermediate region, with two
A adjacent annular section is illustrated as example, i.e. the size of the second lenticule on M-1 annular section and adjacent
The size of the second lenticule on M (2≤M≤N) annular section is identical, and second on satisfaction M-1 annular section is micro-
The size of mirror and the second lenticule on M (2≤M≤N) annular section is greater than the second lenticule on M-2 annular section
Size of the size less than the second lenticule on M+1 annular section；Correspondingly, the first annular section, the second annular section,
Three annular sections ..., N-1 annular section all have several second photosensitive areas in N (N >=2) annular section, and first is cyclic annular
Region, the second annular section, third annular section ..., N-1 annular section, at least two in N (N >=3) annular section
The size of the second photosensitive area in the adjacent annular section of at least two on adjacent annular section is identical, and close to middle area
The size of the second photosensitive area in the annular section in domain is less than the ruler of the second photosensitive area in the annular section far from intermediate region
It is very little, be illustrated using two adjacent annular sections as example, i.e., the size of the second photosensitive area in M-1 annular section with
The size of the second photosensitive area in adjacent M (2≤M≤N) annular section is identical, and meet in M-1 annular section the
The size of two photosensitive areas and the second photosensitive area in M (2≤M≤N) annular section is greater than the second sense in M-2 annular section
Size of the size in light area less than the second photosensitive area in M+1 annular section.
The arrangement mode of several second lenticules on each annular section can be in rectangular ring arrangement, circular annular form
Arrangement or irregular arrangement, or may be other suitable arrangement modes.The second lenticule on different annular sections
Arrangement mode can be identical or different, the arrangement modes of several second photosensitive areas in an annular section and the annular section
The arrangement mode of several second lenticules of top is identical.
In a specific embodiment, it is carried out referring to FIG. 3, including three annular sections as example using fringe region 22
Illustrate, fringe region 22 includes the first annular section 31, the second annular section 32 and third annular section 33, the first annular section
31 around intermediate region 21, and for the second annular section 32 around the first annular section 31, third annular section 33 is cyclic annular around second
Region 32 has several second lenticule 206a on first annular section 31, has on the second annular section 32 several second micro-
Lens 206b has several second lenticule 206c, the second lenticule on the first annular section 31 on third annular section
The size of 206a is equal to the size of the second lenticule 206b on the second annular section 32, and second on the first annular section 31 is micro-
The size of second lenticule 206b is less than on third annular section 13 on lens 206a and the second annular section 32 second is micro-
The size of mirror 206c；Correspondingly, having several second photosensitive area 202a in the first annular section 31, have in the second annular section 32
There are several second photosensitive area 202b, there are several second photosensitive area 202c in third annular section 33, in the first annular section 31
The size of the second photosensitive area 202a be equal to the size of the second photosensitive area 202b in the second annular section 32, and the first ring-shaped area
The size of the second photosensitive area 202b in the second photosensitive area 202a and the second annular section 32 in domain 31 is less than third ring-shaped area
The size of the second photosensitive area 202c in domain 33.It in other embodiments, can also be that second on the second annular section is micro-
The size of mirror is equal to the size of the second lenticule on third annular section, and the ruler of the second lenticule on the first annular section
The size of the second lenticule on very little the second lenticule and third annular section less than on the second annular section, corresponding second
The size of the second photosensitive area in annular section is equal to the size of the second photosensitive area in third annular section, and the first ring-shaped area
The size of the second photosensitive area in domain is less than the second sense in the second photosensitive area and third annular section in the second annular section
The size in light area.
In another embodiment, with reference to Fig. 4, the quantity of the annular section of fringe region 22 is 1, is had in annular section
Identical second lenticule 206 of several sizes, the size of the second lenticule 206 are less than the first lenticule on intermediate region 21
205 size, correspondingly, having identical second photosensitive area 202 of several sizes, the second photosensitive area in the annular section 22
202 size is less than the size of the first photosensitive area 201 in intermediate region 21, so that the fringe region 22 of image sensor
On the second lenticule 206 can receive more incident lights so that corresponding second photosensitive area 202 in fringe region 22 can
To receive more incident lights, so as to improve or eliminate edge imaging distortion and deformation, improve image sensor imaging matter
Amount.
The size of first photosensitive area 201 and the second photosensitive area 202 includes length and width, or including length or width
Degree, or including area.I.e. when the size of the second photosensitive area 202 is greater than the size Expressing of the first photosensitive area 201: the second photosensitive area
202 length and width is all larger than the length and width of the first photosensitive area 201；Or indicate that the length of the second photosensitive area 202 is big
In the length of the first photosensitive area 201；Or it is expressed as the width of the second photosensitive area 202 and is all larger than the width of the first photosensitive area 201；
Or it is expressed as area of the area greater than the first photosensitive area 201 of the second photosensitive area 202.
The size of first lenticule 205 and the second lenticule 206 includes diameter and height, or including diameter or height
Degree, or including volume.I.e. when the size of the second lenticule 206 is greater than the size Expressing of the first lenticule 205: the second lenticule
206 diameter and height are all larger than the diameter and height of the first lenticule 205；Or indicate that the diameter of the second lenticule 206 is big
In the diameter of the first lenticule 205；Or it is expressed as the height of the second lenticule 206 and is all larger than the height of the first lenticule 205；
Or it is expressed as volume of the volume greater than the first lenticule 205 of the second lenticule 206.
The refractive index of the material of first lenticule 205 and the second lenticule 206 can be 1.5~2.5.
In one embodiment, the material of first lenticule 205 and the second lenticule 206 can be oxide or organic
Object or other suitable materials.The oxide can be silica or zirconium oxide or other suitable materials.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (8)
1. a kind of image sensor characterized by comprising
Semiconductor substrate, the semiconductor substrate include intermediate region and the fringe region around intermediate region, the marginal zone
Domain includes several annular sections for surrounding intermediate region；
In the semiconductor substrate of the intermediate region have in ranks arrangement several first photosensitive areas, the fringe region it is every
There are several second photosensitive areas in a annular section, and the size of the second photosensitive area of fringe region is greater than the of intermediate region
The size of one photosensitive area, from the direction in intermediate region points toward edge region, the size of the second photosensitive area in different annular sections
It is gradually increased；
Lenticule in semiconductor substrate, the lenticule include several first on semiconductor substrate intermediate region
Lenticule and several second lenticules on each annular section in semiconductor substrate edge region, on fringe region
Several first lenticules of several second lenticules on intermediate region, the first lenticule are located on corresponding first photosensitive area
Side, and the size of the second lenticule on semiconductor substrate edge region is micro- greater than first on semiconductor substrate intermediate region
The size of mirror, from the direction in intermediate region points toward edge region, the size of the second lenticule on different annular sections gradually increases
Greatly, the second lenticule that the size of fringe region is gradually increased is located above the second photosensitive area that corresponding size is gradually increased；
And be gradually increased from the size of the second lenticule on the direction in intermediate region points toward edge region, different annular sections
Scheme includes scheme a and scheme b:
Scheme a, annular section quantity >=2, from the direction in intermediate region points toward edge region, on different annular sections
The size of second lenticule is gradually increased；
Scheme b, the annular section is >=3, and the size phase of the second lenticule on the adjacent annular section of at least two
Together, the size of the second lenticule and on the annular section of intermediate region is less than on the annular section far from intermediate region
The second lenticule size.
2. image sensor as described in claim 1, which is characterized in that the first photosensitive area of each of described intermediate region
Size it is identical, the size of each the first lenticule on the intermediate region is identical.
3. image sensor as claimed in claim 2, which is characterized in that have size identical several on each annular section
Second lenticule has identical several second photosensitive areas of size in each annular section.
4. image sensor as described in claim 1, which is characterized in that annular section quantity >=2, from intermediate region
When the size in the direction in points toward edge region, the second lenticule on different annular sections is gradually increased, it is directed toward from intermediate region
The size in the direction of fringe region, the second photosensitive area in different annular sections is gradually increased.
5. image sensor as described in claim 1, which is characterized in that the annular section is >=3, and at least two phase
The size of the second lenticule on adjacent annular section is identical, and the second lenticule on the annular section of intermediate region
Size be less than far from intermediate region annular section on the second lenticule size when, the adjacent annular section of at least two
In the second photosensitive area size it is identical, and close to intermediate region annular section on the second lenticule size be less than it is separate
The size of the second lenticule on the annular section of intermediate region.
6. image sensor as described in claim 1, which is characterized in that the size of first lenticule and the second lenticule
Including diameter and height, perhaps including diameter or height or including volume.
7. image sensor as claimed in claim 6, which is characterized in that it is micro- that the size of second lenticule is greater than first
The size of mirror includes: that the diameter of the second lenticule is greater than the diameter of the first lenticule, and the height of the second lenticule is greater than first
The height of lenticule.
8. image sensor as described in claim 1, which is characterized in that the size and the first photosensitive area of second photosensitive area
Size include length and width, perhaps including length or width or including area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510223707.3A CN104810379B (en) | 2015-05-05 | 2015-05-05 | image sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510223707.3A CN104810379B (en) | 2015-05-05 | 2015-05-05 | image sensor |
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| Publication Number | Publication Date |
|---|---|
| CN104810379A CN104810379A (en) | 2015-07-29 |
| CN104810379B true CN104810379B (en) | 2019-01-08 |
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| CN110620861B (en) * | 2019-09-24 | 2021-10-15 | Oppo广东移动通信有限公司 | Image sensor, camera module and terminal |
| WO2022113816A1 (en) * | 2020-11-26 | 2022-06-02 | ソニーセミコンダクタソリューションズ株式会社 | Display device |
| CN115508923B (en) * | 2022-09-21 | 2024-03-12 | 歌尔光学科技有限公司 | Fly-eye lens, projection illumination light path and projection device |
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