CN104810260A - Ion implantation method - Google Patents
Ion implantation method Download PDFInfo
- Publication number
- CN104810260A CN104810260A CN201410042291.0A CN201410042291A CN104810260A CN 104810260 A CN104810260 A CN 104810260A CN 201410042291 A CN201410042291 A CN 201410042291A CN 104810260 A CN104810260 A CN 104810260A
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- CN
- China
- Prior art keywords
- ion implantation
- pad oxide
- semiconductor surface
- semiconductor
- glue layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 239000012776 electronic material Substances 0.000 claims abstract description 10
- 108091081377 miR-700 stem-loop Proteins 0.000 claims abstract description 7
- 239000003292 glue Substances 0.000 claims description 22
- 238000002347 injection Methods 0.000 claims description 18
- 239000007924 injection Substances 0.000 claims description 18
- 230000003287 optical effect Effects 0.000 claims description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 238000003384 imaging method Methods 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000012790 adhesive layer Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- -1 boron ion Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention provides an ion implantation method which comprises the following steps: forming a pad oxide layer on the surface of a semiconductor; coating a photoresistive adhesive layer on the surface of the pad oxide layer by utilizing photoresistive adhesive of AZ electronic material company (AZ Electronic Material) MiR700 type; removing the photoresistive adhesive layer in a preset area through exposure development; and carrying out ion implantation on the surface of the semiconductor according to preset ion implantation parameters. Through the ion implantation method, damage to the semiconductor in the ion implantation process can be effectively prevented.
Description
Technical field
The present invention relates to field of manufacturing semiconductor devices, particularly relate to a kind of ion injection method.
Background technology
In process for fabrication of semiconductor device; such as; BCD(Bipolar-CMOS-DMOS; bipolar transistor-CMOS (Complementary Metal Oxide Semiconductor)-double-diffused metal oxide semiconductor) technique or RFLDMOS(high frequency lateral double diffusion metal oxide semiconductor) sinking layer (sinker) in technique injects, and usually can relate to ion implantation technology.Concrete example, with the energy of ion implantation for 80Kev, implantation dosage is 7E15 is example, and existing ion implantation technology method generally includes: be coated with optical resistance glue layer at the semiconductor surface, and the thickness of described optical resistance glue layer is 10000A ~ 15000A; By exposure imaging, remove the described optical resistance glue layer in predeterminable area; According to the parameter of above-mentioned ion implantation, carry out ion implantation to described semiconductor surface.
In such scheme, in ion implantation process, high-octane ion bombards semiconductor surface for a long time, make the semiconductor surface of injection region become amorphous state from monocrystalline state, and the semiconductor of non-injection regions remains monocrystalline state, this will at monocrystalline state and amorphous intersection, produce a very large stress, and this stress may cause be full of cracks, cause semiconductor to damage, affect device performance.
Summary of the invention
The invention provides a kind of ion injection method, for solving the problem that existing ion injection method easily causes semiconductor to damage.
The invention provides a kind of ion injection method, comprising:
Form pad oxide at the semiconductor surface;
Employing model is the photoresistance glue of An Zhi Electronic Materials Corp MiR700 type, and the surface of described pad oxide is coated with optical resistance glue layer;
By exposure imaging, remove the described optical resistance glue layer in predeterminable area, and according to the ion implantation parameter preset, carry out ion implantation to described semiconductor surface.
Ion injection method provided by the invention, by forming pad oxide at the semiconductor surface, the surface of described pad oxide is coated with the photoresistance glue that model is An Zhi Electronic Materials Corp (AZ Electronic Material) MiR700 type, carry out the technical scheme of ion implantation after exposure imaging, effectively avoid causing semiconductor to damage in ion implantation process.
Accompanying drawing explanation
The schematic flow sheet of the ion injection method that Fig. 1 provides for the embodiment of the present invention one;
Fig. 2-Fig. 6 is the generalized section of the structure formed in embodiment one implementation.
Embodiment
For making the object of the embodiment of the present invention, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described.For convenience of description, zoomed in or out the size of different layers and region, so size shown in figure and ratio might not represent actual size, also do not reflect the proportionate relationship of size.
The schematic flow sheet of the ion injection method that Fig. 1 provides for the embodiment of the present invention one, in order to know the description of system to the method in the present embodiment, Fig. 2-Fig. 6 is the generalized section of the structure formed in embodiment one implementation, as shown in Figure 1, said method comprising the steps of:
101, pad oxide is formed at the semiconductor surface.
Concrete, perform the generalized section of the described structure after 101 as shown in Figure 2, wherein, described semiconductor label 21 represents, described pad oxide label 22 represents.
Wherein, described semiconductor can be semiconductor element, the silicon of such as monocrystalline silicon, polysilicon or non crystalline structure or SiGe (SiGe), also can be the semiconductor structure of mixing, such as carborundum, indium antimonide, lead telluride, indium arsenide, indium phosphide, GaAs or gallium antimonide, alloy semiconductor or its combination.The present embodiment is not limited at this.
Optionally, the thickness of described pad oxide can be 300A ~ 600A.Concrete, in the present embodiment, use described pad oxide as the resilient coating of ion implantation, the stress between the injection region formed after alleviating ion implantation and non-injection regions, avoid the excessive semiconductor damage caused of stress.
102, employing model is the photoresistance glue of An Zhi Electronic Materials Corp (AZ Electronic Material) MiR700 type, and the surface of described pad oxide is coated with optical resistance glue layer.
Concrete, perform the generalized section of the described structure after 102 as shown in Figure 3, wherein, described optical resistance glue layer label 31 represents.
Wherein, model is the photoresistance glue of An Zhi Electronic Materials Corp MiR700 type, more effectively can protect the semiconductor surface of injection region and non-injection regions intersection, avoids semiconductor to damage further.
103, by exposure imaging, remove the described optical resistance glue layer in predeterminable area, and according to the ion implantation parameter preset, carry out ion implantation to described semiconductor surface.
Concrete, perform after 103, form injection region by the semiconductor surface below predeterminable area, accordingly, perform the generalized section of the described structure after 103 as shown in Figure 4, wherein, described injection region label 41 represents.
It should be noted that, described predeterminable area can be determined according to the device architecture in practical devices manufacturing process, and a kind of embodiment of the just concrete example shown in figure, the present embodiment is not limited.
Concrete example, can pass through ion implantation, inject boron ion, and the dosage of ion implantation is 7 × 10 to described semiconductor surface
15ions/cm
2, the energy of ion implantation is 100 kiloelectron-volts (kev).Accordingly, the thickness of described optical resistance glue layer can be 26000 dusts (
).
In actual applications, after carrying out ion implantation, also need to remove the remaining optical resistance glue layer of semiconductor surface and pad oxide, to carry out follow-up technological process.Then corresponding, after 103, described method can also comprise:
Remove described optical resistance glue layer and described pad oxide successively.
Concrete, remove the generalized section of the described structure after described optical resistance glue layer as shown in Figure 5, further, remove the generalized section of the described structure after described pad oxide as shown in Figure 6.
Optionally, can hydrofluoric acid be adopted, remove described pad oxide by clean.Concrete, can choose concentration be 1% hydrofluoric acid clean, and the duration of cleaning can be set to 30 minutes.
It should be noted that, in the present embodiment, the structure of each accompanying drawing just carries out the concrete example of ion implantation for existing a kind of common structure, and in actual applications, its structure also can for other structure beyond structure shown in figure.
The ion injection method that the present embodiment provides, by forming pad oxide at the semiconductor surface, the surface of described pad oxide is coated with the photoresistance glue that model is An Zhi Electronic Materials Corp MiR700 type, the technical scheme of ion implantation is carried out after exposure imaging, effectively avoid the semiconductor damage caused in ion implantation process, and then improve the device performance of device.
Last it is noted that above each embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to foregoing embodiments to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (7)
1. an ion injection method, is characterized in that, comprising:
Form pad oxide at the semiconductor surface;
Employing model is the photoresistance glue of An Zhi Electronic Materials Corp MiR700 type, and the surface of described pad oxide is coated with optical resistance glue layer;
By exposure imaging, remove the described optical resistance glue layer in predeterminable area, and according to the ion implantation parameter preset, carry out ion implantation to described semiconductor surface.
2. method according to claim 1, is characterized in that, the thickness of described pad oxide is 300A ~ 600A.
3. method according to claim 1, is characterized in that, the ion implantation parameter that described basis is preset, and carries out ion implantation, specifically comprise to described semiconductor surface:
By ion implantation, inject boron ion to described semiconductor surface, wherein, the dosage of ion implantation is 7 × 10
15ions/cm
2, the energy of ion implantation is 100kev.
4. method according to claim 3, is characterized in that, the thickness of described optical resistance glue layer is
.
5. the method according to any one of claim 1-4, is characterized in that, described to after described semiconductor surface carries out ion implantation, also comprises:
Remove described optical resistance glue layer and described pad oxide successively.
6. method according to claim 5, is characterized in that, the described pad oxide of described removal, specifically comprises:
Adopt hydrofluoric acid, by clean, remove described pad oxide.
7. method according to claim 6, is characterized in that, the concentration of described hydrofluoric acid is 1%, and the duration of described clean is 30 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410042291.0A CN104810260A (en) | 2014-01-28 | 2014-01-28 | Ion implantation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410042291.0A CN104810260A (en) | 2014-01-28 | 2014-01-28 | Ion implantation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104810260A true CN104810260A (en) | 2015-07-29 |
Family
ID=53694996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410042291.0A Pending CN104810260A (en) | 2014-01-28 | 2014-01-28 | Ion implantation method |
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|---|---|
| CN (1) | CN104810260A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106128945A (en) * | 2016-07-18 | 2016-11-16 | 上海集成电路研发中心有限公司 | A kind of ion injection method |
| CN107180755A (en) * | 2016-03-09 | 2017-09-19 | 北大方正集团有限公司 | The preparation method of BCD devices |
| CN107346794A (en) * | 2016-05-04 | 2017-11-14 | 北大方正集团有限公司 | The preparation method of PIN photodiode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110076392A (en) * | 2009-12-29 | 2011-07-06 | 주식회사 동부하이텍 | Semiconductor fabrication method |
| CN102479677A (en) * | 2010-11-29 | 2012-05-30 | 无锡华润上华半导体有限公司 | Semiconductor device and manufacture method thereof |
| CN102637592A (en) * | 2012-04-20 | 2012-08-15 | 中国科学院微电子研究所 | Manufacturing method of semiconductor structure |
-
2014
- 2014-01-28 CN CN201410042291.0A patent/CN104810260A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110076392A (en) * | 2009-12-29 | 2011-07-06 | 주식회사 동부하이텍 | Semiconductor fabrication method |
| CN102479677A (en) * | 2010-11-29 | 2012-05-30 | 无锡华润上华半导体有限公司 | Semiconductor device and manufacture method thereof |
| CN102637592A (en) * | 2012-04-20 | 2012-08-15 | 中国科学院微电子研究所 | Manufacturing method of semiconductor structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107180755A (en) * | 2016-03-09 | 2017-09-19 | 北大方正集团有限公司 | The preparation method of BCD devices |
| CN107346794A (en) * | 2016-05-04 | 2017-11-14 | 北大方正集团有限公司 | The preparation method of PIN photodiode |
| CN107346794B (en) * | 2016-05-04 | 2019-03-19 | 北大方正集团有限公司 | The production method of PIN photodiode |
| CN106128945A (en) * | 2016-07-18 | 2016-11-16 | 上海集成电路研发中心有限公司 | A kind of ion injection method |
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| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150729 |
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| RJ01 | Rejection of invention patent application after publication |