CN104804687B - Conductive die bond bonding glue, conductive die bond Gumming glue film, preparation method and application - Google Patents
Conductive die bond bonding glue, conductive die bond Gumming glue film, preparation method and application Download PDFInfo
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- CN104804687B CN104804687B CN201510173384.1A CN201510173384A CN104804687B CN 104804687 B CN104804687 B CN 104804687B CN 201510173384 A CN201510173384 A CN 201510173384A CN 104804687 B CN104804687 B CN 104804687B
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Abstract
The glue the invention discloses a kind of conductive die bond bonds, including the composition based on following parts by weight：2～10 parts of CTBN modified epoxies, 5～10 parts of diluent, 2～10 parts of thermoplastic resins, 2～5 parts of firming agent, 1～2 part of coupling agent and 70～90 parts of conductive materials.The preparation method of glue the invention also discloses a kind of conductive die bond bonds, a kind of conductive die bond bonding application of the glue in chip package as above, a kind of conductive die bond Gumming glue film, a kind of preparation method of conductive die bond Gumming glue film, and a kind of application of conductive die bond Gumming glue film as above in chip package.The conductive die bond bonding glue and the excellent performance of the conductive die bond Gumming glue film being made from it of the present invention, in application, overflow adhesive phenomenon occurs, and with good manufacturability, can achieve the encapsulation of thinner and less chip.The simple for process of conductive die bond bonding glue and conductive die bond Gumming glue film is prepared using the method for the present invention.
Description
Technical field
The invention belongs to conductive die bond binding material technical field, and in particular to a kind of conductive die bond bonding glue, conduction
The preparation method of die bond bonding glue, the application of conductive die bond bonding glue, the conduction prepared using the conductive bond glue are solid
The application of brilliant Gumming glue film, the preparation method of conductive die bond Gumming glue film and conductive die bond Gumming glue film.
Background technology
With the development of social science and technology, the mankind are more and more fiery to the pursuit of high-tech product, smart mobile phone, electronic product etc.
Heat.To product, the requirement also more and more higher of technological development, constantly require that product is realized on less and less overall dimensions more
Function, promote semiconductor packages expert to find reliability solution party's scheme of thinner, less, higher packaging density, and solve
Such solution page is to provide the material used during manufacture ultra-small semiconductor device.
Traditional chip package connection, is usually used the materials such as plumber's solder or conductive silver glue, due to using plumber's solder
During encapsulation, slicker solder welding minimum pitch be only 0.65mm, if or using conductive silver glue material package when, may result in chip
The phenomenons such as glue, chip inclination are climbed in side, have all severely impacted chip package and have further been miniaturized, it is impossible to have met design requirement.
For realizing the small size of chip package, it is highly miniaturized, the densification of multi-chip unit design, each state is all promptly
New connecting material is researched and developed, wherein, using the traditional connecting material of conductive chip Gumming glue film material substitution, half is received
The favor of conductor industry.Foreign countries have had material manufacturer to develop die bonding conduction thin material, but Related domestic documents are fresh
Have been reported that.
Conductive chip glued membrane encapsulating material, with good manufacturability, can integrated more LED reverse mounting type ability.As side can be eliminated
While climbing glue phenomenon, the spacing between chip and pad is reduced, stable bondline thickness is realized, therefore be may be implemented in packaging
Integrated more chips, raising chip design density, while the gold thread, substrate and molding consumption required for per unit encapsulation is also obtained
To substantially reducing, cost also accordingly declines.
But, existing conductive silver glue encapsulation there is a problem of as follows：1. there are section, wall trace 101 (as shown in Fig. 1 (a))；
2. there is the phenomenon 102 (as shown in Fig. 1 (b)) of excessive glue；3. chip is caused to incline 103 (as shown in Fig. 1 (c)).
Content of the invention
First of the embodiment of the present invention aims to overcome that the above-mentioned deficiency of prior art, there is provided a kind of conductive die bond is glued
Gum deposit liquid, can be used for the conventional conductive elargol class wrapper material of alternative low-power or small-size chips encapsulation etc., to realize more
Good packaging technology and the design density of raising chip package.
Second of the embodiment of the present invention aims to overcome that the above-mentioned deficiency of prior art, there is provided a kind of conductive die bond is glued
The preparation method of gum deposit liquid, can prepare the conventional conductive elargol class envelope for alternative low-power or small-size chips encapsulation etc.
Package material, with the design density that realizes more preferable packaging technology and improve chip package.
The 3rd above-mentioned deficiency for aiming to overcome that prior art of the embodiment of the present invention, there is provided a kind of conductive die bond is glued
The application of gum deposit liquid, can be used for low-power or small-size chips encapsulation field.
The 4th above-mentioned deficiency for aiming to overcome that prior art of the embodiment of the present invention, there is provided a kind of conductive die bond is glued
Glued membrane is connect, the conventional conductive elargol class wrapper material for alternative low-power or small-size chips encapsulation etc. can be prepared, with
Realize more preferable packaging technology and improve the design density of chip package.
The 5th above-mentioned deficiency for aiming to overcome that prior art of the embodiment of the present invention, there is provided a kind of conductive die bond is glued
The preparation method of glued membrane is connect, the conventional conductive elargol class envelope for alternative low-power or small-size chips encapsulation etc. can be prepared
Package material, with the design density that realizes more preferable packaging technology and improve chip package.
The 6th above-mentioned deficiency for aiming to overcome that prior art of the embodiment of the present invention, there is provided a kind of conductive die bond is glued
The application of glued membrane is connect, can be used for low-power or small-size chips encapsulation field.
In order to realize foregoing invention purpose, the technical scheme of the embodiment of the present invention is as follows：
A kind of conductive die bond bonding glue, including the composition based on following parts by weight：2～10 parts of CTBN modified epoxy trees
Fat, 5～10 parts of diluent, 2～10 parts of thermoplastic resins, 2～5 parts of firming agent, 1～2 part of coupling agent and 70～90 parts of conduction materials
Material.
A kind of preparation method of conductive die bond bonding glue, including：
The formula of conductive die bond bonding glue weighs raw material as described above；
By the CTBN modified epoxies, the diluent and the thermoplastic resin at 60～70 DEG C mix homogeneously
Obtain the first mixed liquor；
The conductive material is added in first mixed liquor mix homogeneously and is cooled to room temperature and obtains the second mixing
Liquid；
The firming agent and the coupling agent are added in second mixed liquor evacuation after mix homogeneously, are cooled to
Room temperature obtains the conductive die bond bonding glue.
A kind of conductive die bond bonding application of the glue in chip package as above.
A kind of conductive die bond Gumming glue film, including the first release layer and the second release layer, conduction die bond as above is glued
The glued membrane that gum deposit liquid is made, the glued membrane are arranged between first release layer and second release layer.
Conductive die bond bonding glue as above is coated on first by a kind of preparation method of conductive die bond Gumming glue film
Conductive die bond Gumming glue film is formed between release layer and the second release layer.
And, a kind of application of conductive die bond Gumming glue film as above in chip package.
The conductive die bond bonding glue of the embodiment of the present invention, by CTBN modified epoxies, diluent, thermoplastic resin
The synergism of fat, firming agent, coupling agent and conductive material so that conductive die bond bonding glue overflow adhesive phenomenon in application
Occur, with good manufacturability, can achieve the encapsulation of thinner and less chip.
The preparation method of the conductive die bond bonding glue of the embodiment of the present invention, process is simple can be prepared above-mentioned with excellent
The conductive die bond bonding glue of different in nature energy.
The conductive die bond bonding glue of the embodiment of the present invention is due to above-mentioned excellent performance, can be used for chip package neck
Domain, realizes the encapsulation of thinner and less chip.
The conductive die bond Gumming glue film of the embodiment of the present invention, is made by above-mentioned conductive die bond bonding glue, is utilized
The synergism of CTBN modified epoxies, diluent, thermoplastic resin, firming agent, coupling agent and conductive material so that this is led
Electric die bond Gumming glue film overflow adhesive phenomenon in application occurs, and with good manufacturability, can achieve thinner and less chip
Encapsulation.
The preparation method of the conductive die bond Gumming glue film of the embodiment of the present invention, process is simple can be prepared above-mentioned with excellent
The conductive die bond Gumming glue film of different in nature energy.
The conductive die bond Gumming glue film of the embodiment of the present invention is due to above-mentioned excellent performance, can be used for chip package neck
Domain, realizes the encapsulation of thinner and less chip.
Description of the drawings
Fig. 1 is the schematic diagram of the conductive silver glue for the phenomenon of the generation after chip package of prior art, and wherein (a) is have
Section, the schematic diagram of wall trace, (b) be the phenomenon for having excessive glue schematic diagram, (c) be cause chip incline schematic diagram；
Fig. 2 is the structural representation of the conductive die bond Gumming glue film of the embodiment of the present invention；
Fig. 3 is the schematic diagram of the coating process of the embodiment of the present invention；
Fig. 4 is that the conductive die bond Gumming glue film of the embodiment of the present invention is applied to the structural representation after chip package；
Fig. 5 is that the conductive die bond Gumming glue film of the embodiment of the present invention is used for the effect diagram after chip package, wherein (a)
For overflow adhesive phenomenon, it is (b) thinner encapsulation, (c) is less encapsulation.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, below in conjunction with drawings and Examples, right
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only in order to explain the present invention, and
It is not used in the restriction present invention.
A kind of conductive die bond bonding glue is embodiments provided, including the composition based on following parts by weight：2～
10 parts of CTBN modified epoxies, 5～10 parts of diluent, 2～10 parts of thermoplastic resins, 2～5 parts of firming agent, 1～2 part of coupling
Agent and 70～90 parts of conductive materials.
Preferably, the conductive die bond bonding glue includes the composition based on following parts by weight：3～6 parts of CTBN modification rings
Oxygen tree fat, 5～8 parts of diluent, 3～8 parts of thermoplastic resins, 2～4 parts of firming agent, 1～2 part of coupling agent and 75～90 parts of conductions
Material.
The conductive die bond that the present invention is provided bonds glue, by CTBN modified epoxies, diluent, thermoplastic resin,
The synergism of firming agent, coupling agent and conductive material so that conductive die bond bonding glue overflow adhesive phenomenon in application is sent out
Raw, with good manufacturability, can achieve the encapsulation of thinner and less chip.Above-mentioned synergism can specifically show
The following aspect：(1) as the addition of diluent is caused in the case where other components content is constant, by improving diluent
Content reducing viscosity, now in order to avoid caused by diluent institute viscosity reduce, can be increased by increasing conductive material
Plus viscosity.Therefore, because the synergism of diluent and conductive material so that improve in the case where viscosity is ensured conductive solid
The conductive and heat conductivity of brilliant bonding glue.(2) firming agent forms network structure with thermoplastic resin synergism so that product
Stability and electric conductivity are improved；Firming agent can with CTBN modified epoxy synergism, improve toughening effect.Above-mentioned
These synergism be effect that the special formulation is brought, lack any one composition in the formula or its proportioning be different
The technique effect of the present invention cannot all be realized.
Wherein, CTBN modified epoxies are the matrix resins of curing reaction.Not by the modified epoxy resin of CTBN, tool
Have the shortcomings that hardness height, modulus are low, brittle, when conductive die bond bonding glue is applied in conductive die bond Gumming glue film, by
Poor in glued membrane toughness, the present invention can be very good to improve the epoxy resin by being modified epoxy resin using CTBN
Toughness, improve glued membrane stretch moduluses.CTBN modified epoxies are reacted under the high temperature conditions with firming agent, viscous to reach
Connect effect.
Epoxy resin or reactive diluent of the above-mentioned diluent for viscosity≤4000mPa.s.Wherein, described viscosity be
The viscosity measured at 25 DEG C.For example, the epoxy resin of above-mentioned viscosity≤4000mPa.s can be bisphenol A-type low viscosity epoxy
Resin, the range of viscosities measured at its 25 DEG C are 1000～2000/mPa.s.The reactive diluent is referred specifically to containing epoxy
The low molecule epoxide of group.The above-mentioned low molecule epoxide containing epoxide group includes n-butyl glycidyl
Ether, allyl glycidyl ether, 5- hexyl glycidyl ethers, styrene oxide, phenyl glycidyl ether, cresol shrink
Glycerin ether, to isobutyl phenenyl glycidyl ether, glycidyl methacrylate, three-level carboxylic acid ethylene oxidic ester, two shrink
Glycerin ether, PVOH diglycidyl ether, polypropylene glycol diglycidyl ether, diglycidylaniline, trimethylolpropane
At least one in triglycidyl ether and glycerin triglycidyl ether, preferably polyethyleneglycol diglycidylether or poly-
Propylene glycol diglycidylether.Diluent not only acts as the low viscous effect of dilution drop in system, can also improve Ag powder and exist
The effect of the ratio in system.Especially, the present inventor is had found in experimentation, when conductive die bond bonding glue
For preparing during conductive die bond Gumming glue film, the diluent can also reduce produced tension force during glued membrane overlay film molding, it is to avoid
Occur crackle or slight crack during coating film forming.
Thermoplastic resin in the conductive die bond bonding glue is acrylic acid thermoplastic resin.Preferably, the propylene acid heat
Plastic resin is acrylic acid thermoplastic resin containing epoxy radicals.This contains epoxy radicals acrylic acid thermoplastic resin and CTBN modified epoxy trees
Lipid phase dissolubility is good, during prepare glue and glued membrane, separates out without phenomenon of phase separation or resin.The weight of the thermoplastic resin is equal
Molecular weight isThe thermoplastic resin of the high molecular can conduct in whole formula system
Resin modified viscosifier, strengthen cementability.Especially, when the thermoplastic resin is acrylic acid thermoplastic resin containing epoxy radicals,
Because containing epoxy functionality in its molecular structure, there can not only be good mutual compatibility with CTBN modified epoxies, and
Epoxy functionality participates in reaction in solidification, forms network structure with firming agent, improves stability and the electric conductivity of product.
When prepared by conductive die bond bonding glue conductive die bond Gumming glue film, as which possesses excellent membrane formation mechanism, therefore, can be by
Each raw material passes through coating machine coating film forming.When the conductive die bond bonding glue is prepared as conductive die bond Gumming glue film, the heat
Plastic resin can strengthen the cementability of double conductor material of glued membrane, may also function as the effect of toughener, improve the pliability of glued membrane.
Specifically, the thermoplastic resin is SG- selected from the product type of Nagse chemtex corporation (Japanese Chang Lai companies)
At least one in P3, SG-80H, SG-80H-3.Wherein, the molecular weight of SG-P3 is 85 × 104, the molecular weight of SG-80H is 35
×104, the molecular weight of SG-80H-3 is 40 × 104.Although macromolecular compound mostly is solid-state, technical scheme
In be not intended to limit thermoplastic resin for solid-state or liquid.In actual use, the product of particularly commercialization, is made for convenience
With more use solvents are diluted.SG-80H described above, molecular weight 350000, viscosity are 1000mPa.s (25 DEG C), its
Solidification amount is 18%.
Above-mentioned firming agent is anhydride.From anhydride as system firming agent, it is in middle cryogenic conditions using anhydride curing agent
There is down the characteristic of good stability so that the conductive die bond bonding glue can be with long storage time, it is ensured that the conduction that makes
Die bond bonding glue possesses longer usage cycles.Anhydride can stand high temperature simultaneously, therefore can solidify at high temperature.High temperature is solid
Changing can increase adhesive strength and improve heat resistance, with respect to normal temperature cure, be also beneficial to improve conductive die bond bonding glue
Conductivity.It is therefore preferable that high temperature resistant, heat distortion temperature are high and there is well flexible anhydride.Specifically, the anhydride can be
Hexahydrophthalic anhydride, tetrabydrophthalic anhydride, 70 anhydride, 647 anhydride.It is furthermore preferred that the anhydride is hexahydro neighbour's benzene two
Formic anhydride, its are engaged with CTBN modified epoxies, with good toughening effect.The toughening effect and the net of epoxy resin
Network structure and average network chain length have very big relation, as the average network chain length (M of epoxyC) less when toughening effect poor, when
With (MC) increase, its toughening effect significantly increases.The present invention ought particularly preferably using HHPA (hexahydrophthalic anhydride)
In epoxy matrix, the construction unit of HHPA when anhydride is as firming agent, is introduced, increase its average network chain length so as to which network chain is firm
Property increase, improve toughening effect.
Above-mentioned coupling agent is the silane containing epoxide group.Specifically, it is somebody's turn to do the silane containing epoxide group and can select and contains
The γ of epoxide group-(the third oxygen of 2,3- epoxies) propyl trimethoxy silicane.
Above-mentioned conductive material is argentum powder.Conductive material plays the effect of conductive and heat conduction in system, is led by selecting height
At least one method in the material of electric rate, increase addition of the conductive material in system or selection conductive material different shape
To improve the conductivity of conductive die bond bonding glue and conductive die bond Gumming glue film.The argentum powder of the present invention is preferably nano level
Argentum powder.When the size to argentum powder is not limited, preferred flake silver powder.
The embodiment of the present invention additionally provides a kind of preparation method of conductive die bond bonding glue, including the steps：
Step S10：Formula according to above-mentioned conductive die bond bonding glue weighs raw material.
Step S20：By CTBN modified epoxies, diluent and thermoplastic resin, at 60～70 DEG C, mix homogeneously is obtained
First mixed liquor.
Step S30：Conductive material is added in the first mixed liquor mix homogeneously and is cooled to room temperature and obtains the second mixing
Liquid.It is preferred that the time for mixing is preferably 30～50min.
Step S40：Firming agent and coupling agent are added in the second mixed liquor evacuation after mix homogeneously, room temperature is cooled to
Obtain conductive die bond bonding glue.
Said process can be carried out in the equipment such as reactor, and whole preparation process can pass through stirring and cause mixing more
Uniformly.
Wherein, CTBN modified epoxies are prepared by method preparation：
Step S11：By the nbr carboxyl terminal CTBN of 10～40 parts of parts by weight and changing for 40～70 parts of parts by weight
Property bisphenol A epoxide resin DGEBA reacts 30～40min at 110～120 DEG C and obtains the first mixture.Wherein, preferred CTBN
For 40 parts, DGEBA is 60 parts.
Step S12：By the bisphenol-A of 1～20 part of parts by weight and the ethyltriphenylphosphiodide iodide of 0.01～0.5 part of parts by weight
Phosphine is added in the first mixture, evacuation after reacting 6h at 100～110 DEG C, is cooled to room temperature and is obtained CTBN modified epoxies
Resin.Preferably, bisphenol-A is 2 parts, and ethyltriphenylphosphiodide iodide phosphine is 0.08 part.
The preparation method of the conductive die bond bonding glue of the embodiment of the present invention, process is simple can be prepared with superiority
The conductive die bond bonding glue of energy.
The embodiment of the present invention additionally provides a kind of conductive die bond bonding application of the glue in chip package.The conductive die bond
Bonding glue has good manufacturability, and in application, overflow adhesive phenomenon occurs, and can achieve the encapsulation of thinner and less chip.
The embodiment of the present invention additionally provides a kind of conductive die bond Gumming glue film.The conductive die bond Gumming glue film is using above-mentioned
Prepared by conductive die bond bonding glue, with above-mentioned conductive die bond adhesive glue liquid identical formula.As shown in Fig. 2 being this
The structural representation of the conductive die bond Gumming glue film of bright embodiment.The conductive die bond Gumming glue film include the first release layer 201,
The glued membrane 203 that two release layers 202 and conduction die bond bonding glue as above are made.The glued membrane 203 be arranged on first from
Between type layer 201 and the second release layer 202., used as protective layer, the second release layer 202 is used as bearing bed for first release layer 201.
The embodiment of the present invention additionally provides a kind of preparation method of conductive die bond Gumming glue film.The method will be as above
Conductive die bond bonding glue is coated between the first release layer and the second release layer and forms conductive die bond Gumming glue film.The coating can
To complete on coating apparatus.As shown in figure 3, the schematic diagram of the coating process for the embodiment of the present invention.Preferred in the present invention one
Embodiment in, the mode of the coating adopts roller coat.The process of the coating is：In the head of coating apparatus, conductive die bond is glued
Gum deposit liquid 301 is applied on the second release layer film 304 as bearing bed, by conductive die bond bonding glue 301 and second from
Type layer film 304 passes through the thermal treatment zone 302 so as to which hot setting forms laminated film.Then will be release for first as protective layer
Layer film 303 is sent into compound with laminated film in coating apparatus.Wherein, the first release layer film 303 is from conductive die bond adhesive glue
The surface relative with the second release layer film 304 of the layer that liquid 301 is formed is entered in coating apparatus, so that conductive die bond is glued
Gum deposit liquid 301 is located between the first release layer film 303 and the second release layer film 304, ultimately forms spool thin film 305.Should
Spool thin film 305 is the conductive die bond Gumming glue film of the present invention.
The embodiment of the present invention additionally provides a kind of application of conductive die bond Gumming glue film in chip package.As shown in figure 4,
Conductive die bond Gumming glue film for the embodiment of the present invention is applied to the structural representation after chip package.By conductive die bond bonded adhesives
Film 402 is coated between chip 401 and substrate 403, makes chip 401 and substrate 403 bond.The conductive die bond Gumming glue film is put
During being packaged to chip between chip and substrate, overflow adhesive phenomenon occurs, and the conductive die bond Gumming glue film has
Good manufacturability, can achieve the encapsulation of thinner and less chip.As shown in figure 5, the conductive die bond for the embodiment of the present invention
Gumming glue film is used for the effect diagram after encapsulation, and wherein (a) is overflow adhesive phenomenon, is (b) thinner encapsulation, (c) is less
Encapsulation.
Technical scheme is described further below by specific embodiment.
Indicate Ru not special, the thermoplastic resin in following embodiments and comparative example selects Nagase chemtex SG-P3
().The mean diameter ＜ 100nm of nanometer silver powder.CTBN is selected：Gu Lide BF
The CTBN of model CTBN1300 × 8 of Goodrich companies production.Bisphenol A epoxide resin selects LG-DOW DER331.
Embodiment 1
The formula of the conductive die bond bonding glue of embodiment 1 is as shown in table 1.Wherein, CTBN modified epoxies are by such as
Prepared by lower process：40 parts of nbr carboxyl terminal CTBN and 60 parts of modified bisphenol A epoxy resin DGEBA are reacted at 120 DEG C
30min obtains the first mixture, and 2 parts of bisphenol-As and 0.08 part of ethyltriphenylphosphiodide iodide phosphine are added in the first mixture,
At 110 DEG C, evacuation after reaction 6h, is cooled to room temperature and obtains CTBN modified epoxies.Weigh respectively according to the formula shown in table 1
Raw material.CTBN modified epoxies, diluent and thermoplastic resin are uniformly mixed at 60 DEG C and obtain the first mixed liquor.
Conductive material is added in the first mixed liquor to mix 30min and be cooled to room temperature and obtains the second mixed liquor.By firming agent and idol
Connection agent is added in the second mixed liquor and is uniformly mixed rear evacuation, is cooled to room temperature and obtains conductive die bond bonding glue.Will
The conductive die bond bonding glue is prepared into roll film by coating apparatus.The main performance ginseng of the conductive die bond Gumming glue film
Number is as shown in table 2.The conductive die bond Gumming glue film is applied to such as 3 institute of table of the Specifeca tion speeification after chip package hot setting
Show.
Embodiment 2
The formula of the conductive die bond bonding glue of embodiment 2 is as shown in table 1.Wherein, CTBN modified epoxies are by such as
Prepared by lower process：10 parts of nbr carboxyl terminal CTBN and 40 parts of modified bisphenol A epoxy resin DGEBA are reacted at 110 DEG C
40min obtains the first mixture, and 1 part of bisphenol-A and 0.01 part of ethyltriphenylphosphiodide iodide phosphine are added in the first mixture,
At 100 DEG C, evacuation after reaction 6h, is cooled to room temperature and obtains CTBN modified epoxies.Weigh respectively according to the formula shown in table 1
Raw material.CTBN modified epoxies, diluent and thermoplastic resin are uniformly mixed at 70 DEG C and obtain the first mixed liquor.
Conductive material is added in the first mixed liquor to mix 50min and be cooled to room temperature and obtains the second mixed liquor.By firming agent and idol
Connection agent is added in the second mixed liquor and is uniformly mixed rear evacuation, is cooled to room temperature and obtains conductive die bond bonding glue.Will
The conductive die bond bonding glue is prepared into roll film by coating apparatus.The main performance ginseng of the conductive die bond Gumming glue film
Number is as shown in table 2.The conductive die bond Gumming glue film is applied to such as 3 institute of table of the Specifeca tion speeification after chip package hot setting
Show.
Embodiment 3
The formula of the conductive die bond bonding glue of embodiment 3 is as shown in table 1.Wherein, CTBN modified epoxies are by such as
Prepared by lower process：25 parts of nbr carboxyl terminal CTBN and 70 parts of modified bisphenol A epoxy resin DGEBA are reacted at 120 DEG C
30min obtains the first mixture, and 20 parts of bisphenol-As and 0.5 part of ethyltriphenylphosphiodide iodide phosphine are added in the first mixture,
At 110 DEG C, evacuation after reaction 6h, is cooled to room temperature and obtains CTBN modified epoxies.Weigh respectively according to the formula shown in table 1
Raw material.CTBN modified epoxies, diluent and thermoplastic resin are uniformly mixed at 63 DEG C and obtain the first mixed liquor.
Conductive material is added in the first mixed liquor to mix 40min and be cooled to room temperature and obtains the second mixed liquor.By firming agent and idol
Connection agent is added in the second mixed liquor and is uniformly mixed rear evacuation, is cooled to room temperature and obtains conductive die bond bonding glue.Will
The conductive die bond bonding glue is prepared into roll film by coating apparatus.The main performance ginseng of the conductive die bond Gumming glue film
Number is as shown in table 2.Solid for conduction Gumming glue film is applied to such as 3 institute of table of the Specifeca tion speeification after chip package hot setting
Show.
Comparative example 1
CTBN modified epoxies, its preparation method and enforcement are substituted using bisphenol A epoxide resin in the formula of comparative example 1
Example 1 is identical.The formula of comparative example 1 is as shown in table 1.
Comparative example 2
Diluent is not contained in the formula of comparative example 2.Its preparation method is in addition to without diluent, same as Example 1.Right
The formula of ratio 2 is as shown in table 1.
Comparative example 3
Thermoplastic resin is not contained in formula in comparative example 3.Its preparation method in addition to without thermoplastic resin, with enforcement
Example 1 is identical.The formula of comparative example 3 is as shown in table 1.The glued membrane of the embodiment 3 is applied to the master after chip package hot setting
Want performance parameter as shown in table 3.
Comparative example 4
70 anhydride are employed in formula in comparative example 4 substitutes hexahydrophthalic anhydride.Its preparation method remove without
Outside coupling agent, same as Example 1.The formula of comparative example 4 is as shown in table 1.The glued membrane of embodiment 4 is applied to chip package high
Specifeca tion speeification after temperature solidification is as shown in table 3.
Comparative example 5
Acrylic acid thermoplastic resin containing epoxy radicals, its preparation method are substituted using phenoxy resin in the formula of comparative example 5
Same as Example 1.The formula of comparative example 5 is as shown in table 1.The glued membrane of embodiment 5 is applied to after chip package hot setting
Specifeca tion speeification as shown in table 3.
Comparative example 6
For being applied to the conductive silver glue of quasiconductor (IC) encapsulation on the market, its product type is comparative example 6：ablestik
8290.The main performance parameter of the conductive silver glue of comparative example 6 is as shown in table 2.The conductive silver glue is applied to chip package high
Specifeca tion speeification after temperature solidification is as shown in table 3.
1 embodiment 1～3 of table and the formula of comparative example 1～5
The main performance parameter of 2 embodiment of table, 1～3 6 conductive silver glue of conductive die bond Gumming glue film and comparative example
Wherein, specific insulation is determined using SZT-2 four-point probes device.Heat conductivity adopts DTC-300 conductometers
Determine.
3 embodiment 1～3 of table and comparative example 3～6 are applied to the Specifeca tion speeification after chip package hot setting
Wherein, thermal resistance is determined using BC3184 thermal resistance testers.Conducting resistance is determined using ohmmeter method of testing.Bonding
Intensity is determined using DAGE-4000 tension testers.MSL Level be moisture sensitive grade, MSL capable for
Small die are the moisture sensitivity level suitable for small-size chips encapsulation, and the sensitivity grade adopts JEDEC standard.Its
In, on 7*7mm PPF QFN with 2.5*2.5*0.33mmdie refer to encapsulate on the QFN of 7*7mm PPF frameworks
2.5*2.5*0.33mm chip.
Result from table 2 and table 3 understands the conductive die bond bonding that the conductive die bond bonding glue of the present invention is prepared
The specific insulation of glued membrane, heat conductivity, thermal resistance and conducting resistance and comparative example 6 quite, show that the product of the present invention can be replaced
Change the conductive silver glue product of maturation of the prior art.From adhesive strength/260 DEG C of table 3/silver, (260 DEG C of under-fillers are silver
Adhesion strength) result can be seen that the present invention bond effect better than comparative example 6, i.e., product of the invention substitute existing
When the conductive silver glue product of the maturation having in technology is used, suitable conductive and heat-conducting effect can not only be reached, moreover it is possible to improve viscous
Knotting strength.
Additionally, consider from the mechanical property of comparative example 1～4 and filming performance, show the present invention product performance than
Comparative example is good.Specifically, in due to 1 formula of comparative example, CTBN modified epoxies are substituted using bisphenol A epoxide resin directly,
As bisphenol A type epoxy resin does not have the effect for improving toughness of CTBN modified epoxies, therefore, made by comparative example 1
Glued membrane rigidity is big, and toughness is not enough, brittle.In due to the formula of comparative example 2, not using diluent, therefore, the glue of comparative example 2
When film molding, tension force is larger, and surface has crackle, out-of-flatness phenomenon occurs.In due to the formula of comparative example 3, do not use
Acrylic acid thermoplastic resin, therefore, the film property of comparative example 3 is poor, and the product of comparative example 3 is difficult to film forming.Due to comparative example 4
In formula, 70 anhydride are used, compared to using hexahydrophthalic anhydride, the average network chain length of the epoxy of 70 anhydride is less,
The Toughness Ratio of the glued membrane that is made using 70 anhydride is poor using the toughness of hexahydrophthalic anhydride.Additionally, from the result of table 3
As can be seen that compared to hexahydrophthalic anhydride, 70 anhydride are to the raising of conductivity and the effect of caking property not as hexahydro neighbour
Phthalate anhydride.In due to comparative example 5, the thermoplastic of acrylic acid containing epoxy radicals is substituted using other thermoplastic resins (phenoxy resin)
Property resin, compared to acrylic acid thermoplastic resin containing epoxy radicals, the film property of other thermoplastic resins and caking property are poor, because
This, the film property and bonding force of glued membrane obtained in comparative example 5 is substantially poor.
In sum, the conductive die bond bonding glue of the embodiment of the present invention and the conductive die bond Gumming glue film that is made from it
Excellent performance, in application, overflow adhesive phenomenon occurs, and with good manufacturability, can achieve the envelope of thinner and less chip
Dress.The process is simple that conductive die bond bonding glue and conductive die bond Gumming glue film are prepared using the method for the embodiment of the present invention is easy
OK.Contrast from test result of the chip conductive die bond Gumming glue film that makes with conductive silver glue on the market, chip conductive die bond
Gumming glue film can replace conductive silver glue in small-power and undersized chip package, completely, and than traditional conductive silver
Glue is with more excellent packaging technology performance and the packaging density of Geng Mi.
Presently preferred embodiments of the present invention is the foregoing is only, not in order to limit the present invention, all in essence of the invention
Any modification, equivalent and improvement that is made within god and principle etc., all should be included within protection scope of the present invention.
Claims (10)
1. a kind of conductive die bond bonds glue, it is characterised in that include the composition based on following parts by weight：2～10 parts of CTBN
Modified epoxy, 5～10 parts of diluent, 2～10 parts of thermoplastic resins, 2～5 parts of firming agent, 1～2 part of coupling agent and 70～
90 parts of conductive materials；
Wherein, the CTBN modified epoxies are prepared using following methods：
Modified bisphenol A epoxy tree by the nbr carboxyl terminal CTBN and 40～70 parts of parts by weight of 10～40 parts of parts by weight
Fat DGEBA reacts 30～40min at 110～120 DEG C and obtains the first mixture；
The ethyltriphenylphosphiodide iodide phosphine of the bisphenol-A of 1～20 part of parts by weight and 0.01～0.5 part of parts by weight is added to described
In first mixture, evacuation after reacting 6h at 100～110 DEG C is cooled to room temperature and obtains the CTBN modified epoxies.
2. conductive die bond as claimed in claim 1 bonds glue, it is characterised in that：The thermoplastic resin is acrylic acid thermoplastic
Property resin.
3. conductive die bond as claimed in claim 2 bonds glue, it is characterised in that：The weight average molecular weight of the thermoplastic resin
For 350000≤MW≤850000.
4. the conductive die bond bonding glue as described in any one of claims 1 to 3, it is characterised in that：The firming agent is anhydride；
And/or, epoxy resin or reactive diluent of the diluent for viscosity≤4000mPa.s；And/or, the coupling agent be containing
There is the silane of epoxide group；And/or, the conductive material is argentum powder.
5. a kind of conductive die bond bonds the preparation method of glue, it is characterised in that include：
Formula according to the conductive die bond bonding glue as described in any one of Claims 1 to 4 weighs raw material；
By the CTBN modified epoxies, the diluent and the thermoplastic resin, at 60～70 DEG C, mix homogeneously is obtained
First mixed liquor；
The conductive material is added in first mixed liquor mix homogeneously and is cooled to room temperature and obtains the second mixed liquor；
The firming agent and the coupling agent are added in second mixed liquor evacuation after mix homogeneously, room is cooled to
Temperature obtains conductive die bond bonding glue.
6. conductive die bond as claimed in claim 5 bonds the preparation method of glue, it is characterised in that the CTBN modified epoxies
The preparation method of resin includes：
Modified bisphenol A epoxy tree by the nbr carboxyl terminal CTBN and 40～70 parts of parts by weight of 10～40 parts of parts by weight
Fat DGEBA reacts 30～40min at 110～120 DEG C and obtains the first mixture；
The ethyltriphenylphosphiodide iodide phosphine of the bisphenol-A of 1～20 part of parts by weight and 0.01～0.5 part of parts by weight is added to described
In first mixture, evacuation after reacting 6h at 100～110 DEG C is cooled to room temperature and obtains the CTBN modified epoxies.
7. a kind of conductive die bond bonding application of the glue in chip package as described in any one of Claims 1 to 4.
8. a kind of conductive die bond Gumming glue film, including the first release layer and the second release layer, it is characterised in that also include such as right
Require the glued membrane that the bonding glue of the conductive die bond described in 1～4 any one is made, the glued membrane be arranged on first release layer with
Between second release layer.
9. a kind of preparation method of conductive die bond Gumming glue film, it is characterised in that：By as described in any one of Claims 1 to 4
Conductive die bond bonding glue is coated between the first release layer and the second release layer and forms conductive die bond Gumming glue film.
10. application of a kind of conductive die bond Gumming glue film as claimed in claim 8 in chip package.
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| CN201510173384.1A CN104804687B (en) | 2015-04-13 | 2015-04-13 | Conductive die bond bonding glue, conductive die bond Gumming glue film, preparation method and application |
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| CN201510173384.1A CN104804687B (en) | 2015-04-13 | 2015-04-13 | Conductive die bond bonding glue, conductive die bond Gumming glue film, preparation method and application |
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| CN109415609B (en) * | 2016-06-23 | 2021-03-16 | 株式会社寺冈制作所 | Adhesive composition and adhesive sheet |
| CN106928892B (en) * | 2017-04-14 | 2020-12-15 | 广州日高新材料科技有限公司 | Single-component epoxy electronic adhesive and preparation method and application thereof |
| CN108913047B (en) * | 2018-07-26 | 2020-12-25 | 深圳广恒威科技有限公司 | Conductive solid crystal bonding glue solution, high-heat-conductivity conductive adhesive film and preparation method thereof |
| CN109119381A (en) * | 2018-08-06 | 2019-01-01 | 上海长园维安微电子有限公司 | A kind of glue improving the unidirectional negative resistance type TVS chip packaging yield of N substrate |
| CN110964462B (en) * | 2019-12-09 | 2021-06-29 | 南京金世家新材料科技有限公司 | Single-component conductive adhesive stored and cured at normal temperature and preparation method and application thereof |
| CN114350294B (en) * | 2021-04-09 | 2023-08-22 | 杭州安誉科技有限公司 | Preparation method of conductive adhesive film for circuit board |
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| CN1831073A (en) * | 2005-03-07 | 2006-09-13 | 国家淀粉及化学投资控股公司 | Low stress conductive adhesive |
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| CN104046285A (en) * | 2013-03-15 | 2014-09-17 | 富葵精密组件(深圳)有限公司 | Film, flexible substrate, flexible printed circuit and manufacturing method |
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| JP2001131499A (en) * | 1999-11-09 | 2001-05-15 | Toray Ind Inc | Adhesive sheet for semiconductor device, and parts and semiconductor device using same |
| CN1831073A (en) * | 2005-03-07 | 2006-09-13 | 国家淀粉及化学投资控股公司 | Low stress conductive adhesive |
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