CN104797087A - Method for repairing printed circuit trace and equipment - Google Patents

Method for repairing printed circuit trace and equipment Download PDF

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Publication number
CN104797087A
CN104797087A CN201410778053.6A CN201410778053A CN104797087A CN 104797087 A CN104797087 A CN 104797087A CN 201410778053 A CN201410778053 A CN 201410778053A CN 104797087 A CN104797087 A CN 104797087A
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China
Prior art keywords
pulse
substrate
donor film
donor
pcb
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CN201410778053.6A
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CN104797087B (en
Inventor
M·泽诺
Z·科特勒
S·纳吉德
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Orbotech Ltd
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Orbotech Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/34—Laser welding for purposes other than joining
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/222—Completing of printed circuits by adding non-printed jumper connections

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Laser Beam Processing (AREA)

Abstract

The application relates to a method for a repairing printed circuit trace and equipment. A method for material deposition comprises providing a transparent donor substrate, which is provided with oppositely disposed first and second surfaces, and a donor film formed on the second surface. The thickness of the donor film is [delta], the thermal diffusivity of the donor film is [alpha], and the thickness and the thermal diffusivity are represented through a thermal diffusion time [tau]=( [delta]<2>/4[alpha]). The donor substrate is positioned to be closer to a receptor substrate, and the second surface faces the receptor substrate. A pulse radiated by laser having a pulse continuous time not more than two times of the thermal diffusion time of the donor film is guided to pass through the first surface of the donor substrate and impact on the donor film so that droplets of a molten material is induced to injected from the donor film to the receptor substrate.

Description

Repair the method and apparatus of printed circuit traces
the cross reference of related application
Subject application advocates the rights and interests of the U.S. Provisional Patent Application case 61/916,233 that on December 15th, 2013 applies for.The part that continues of the U.S. patent application case 13/146,200 of the application on July 26th, in thenational phase 2011 of the PCT patent application case PCT/IL2010/000106 of subject application or application on February 7th, 2010.All these related application are incorporated herein by reference.
Technical field
The present invention relates generally to laser induced material transfer, and in particular, relates to the method and apparatus for repairing the open metal defect in circuit trace.
Background technology
In laser direct-writing (LDW) technology, use laser beam to produce the patterned surface with the three-dimensional structure of spatially resolving by controlled material ablation or deposition.Laser induced shift forward (LIFT) can deposit the LDW technology applied in micro-pattern from the teeth outwards.
In LIFT, laser photon provides the actuating force in order to launch a small amount of material from donor film towards receptor substrate.Usually, the inner side of laser beam and donor film interacts, and described donor film is applied in non-absorbing carrier substrates.In other words, incident laser beam propagates across transparent carrier, and the inner surface of photon tunicle absorbs afterwards.More than certain energy threshold, material sprays from donor film towards the surface of substrate, and in LIFT system known in the art, described substrate is generally placed to close proximity or even contacts donor film.The laser energy alterable applied, to control the forward propulsion produced in the membrane volume of institute's radiation.Nei Geer (Nagel) and Li Pengte (Lippert) people such as Singhs (Singh) in nano material: with laser carry out in process and characterization publish (editor (Wiley-VCH Verlag GmbH & Co.KGaA, 2012), 255 pages to 316 pages) " shifting (Laser-Induced ForwardTransfer for the Fabrication of Devices) forward for the laser induced of processing unit (plant) " in micro Process in LIFT principle and apply the investigation that provides.
In technique, known use LIFT repairs circuit.For example, the PCT International Publication case WO 2010/100635 that its disclosure is incorporated herein by reference describes the system and method repairing circuit, wherein uses laser to carry out the conductor restoring area of the conductor that pre-process circuit substrate is formed.In one way laser beam is applied to donor substrate, makes a part for donor substrate depart from from donor substrate and transfer to predetermined conductor position.
Summary of the invention
Embodiments of the invention described below are provided for the method and system of the improvement of LIFT, and it is particularly useful for (but exclusively non-) repairs metal trace on the substrates such as such as printed circuit board (PCB).
According to embodiments of the invention, therefore a kind of method of deposition of material is provided, it comprises provides the transparent donor substrate with the first and second relative surfaces and the donor film be formed on described second surface, and described donor film has thickness δ and thermal diffusivity α and by thermal diffusion time τ=(δ 2/ 4 α) characterize.Donor substrate is positioned proximate to receptor substrate, and wherein second surface faces described receptor substrate.The laser radiation pulse with the pulse duration of the twice of the thermal diffusion time of no more than donor film through guiding with the first surface through donor substrate, and impinges upon on described donor film and is ejected into receptor substrate from donor film with the drop bringing out melted material.
In certain embodiments, described donor film comprises metal.In an exemplary embodiment, δ≤1 μm, and the pulse duration of laser pulse be less than 5ns, or be preferably less than 2ns.
Additionally or alternati, pilot pulse comprises with through selecting with the first pulse promoting the first pulse energy drop being adhered to receptor substrate to guide described laser emission, and then initial metal layer is formed in receptor substrate, and then guide the second pulse of described laser emission with the second pulse energy being greater than described first pulse energy, make described drop accumulate described metal in described initial metal layer.
In the disclosed embodiment, receptor substrate is printed circuit board (PCB), and guides described packet of pulses containing bringing out the deposition of described metal to repair the defect in the conductive trace on described printed circuit board (PCB).
Usually, the pulse duration is less than or equal to the thermal diffusion time of donor film.
In the disclosed embodiment, guide described packet of pulses containing concentrating described laser emission to impinge upon on described donor film by the bundle spot size of ten times of the thickness δ being at least donor film.
According to embodiments of the invention, also provide a kind of method of deposition of material, it comprises provides the transparent donor substrate with the first and second relative surfaces and the donor film be formed on described second surface, and described donor film comprises metal.Donor substrate is positioned proximate to receptor substrate, and wherein second surface faces described receptor substrate, and wherein between donor film and receptor substrate, has the gap of at least 0.1mm.The pulse of laser emission through guiding with the first surface through donor substrate, and impinges upon on described donor film so that the molten melt drop bringing out metal is ejected into described receptor substrate from donor film through described gap.
In certain embodiments, when the described pulse strikes of laser emission is on described donor film, the described gap between described donor film and described receptor substrate is at least 0.2mm, or even 0.5mm.
According to embodiments of the invention, provide a kind of method that circuit is repaired in addition, it comprises the defect in the conductive trace identified on printed circuit board (PCB).Laser beam is through guiding with the position of the described defect on printed circuit board (PCB) described in preliminary treatment.After position described in preliminary treatment, have the described position that the transparent donor substrate on the first and second relative surfaces and the metallic donor film of bag be formed on described second surface are positioned proximate to described defect, wherein said second surface faces described printed circuit board (PCB).The pulse of laser emission through guiding with the first surface through donor substrate, and impinges upon to bring out on described rejected region that molten melt drop to be ejected into from donor film described printed circuit board (PCB) on described donor film, and then repairs described defect.
In certain embodiments, guide described laser beam to comprise and remove metal by carrying out laser ablation from described position.In the disclosed embodiment, when described defective packets contains the breach in described conductive trace, remove metal and be included in described breach adjacent place by the edge preform of described conductive trace.In one embodiment, described edge preform is comprised conductive trace described in ablation to cause the described edge of described conductive trace to tilt towards described breach, likely by forming stepped slope in described conductive trace.
Additionally or alternati, described edge preform can be comprised the groove in conductive trace described in ablation to strengthen the adhesion of described drop to described conductive trace.
In certain embodiments, guide the described packet of pulses of described laser emission to be contained on described conductive trace and deposit described molten melt drop to extend above described preform edge and to extend beyond described preform edge.Additionally or alternati, guide the described packet of pulses of described laser emission to be contained on described conductive trace and deposit described molten melt drop to form the sticking patch conformed to the profile of described conductive trace in described rejected region.
In other embodiments, the substrate guiding described laser beam to be included in described printed circuit board (PCB) scans described laser beam so that at described near sites by described substrate roughening, and then promote described drop to adhere to described substrate.In one embodiment, scan described laser beam and be included in described substrate and form well pattern, the described pattern of wherein said well can be non-directional.
In the disclosed embodiment, guide described laser beam to comprise and use described laser beam at described near sites from described conductive trace ablation oxide skin(coating), to promote described drop to adhere to described conductive trace.
Additionally or alternati, repair described defective packets and be contained in described conductive trace and form sticking patch, and described method be included in repair described defect after guide described laser beam to carry out reprocessing to described sticking patch.
According to embodiments of the invention, provide a kind of method that circuit is repaired further, it comprises the position of the defect in the conductive trace identified on printed circuit board (PCB).Transparent donor substrate and the metallic donor film of bag be formed on described second surface with the first and second relative surfaces are positioned proximate to described printed circuit board (PCB), and wherein said second surface faces described printed circuit board (PCB).First pulse of laser emission through guiding with the first surface through donor substrate, and impinges upon on described donor film and is ejected on the described position of the described defect described printed circuit board (PCB) from donor film to bring out the first molten melt drop.Described first pulse has through selecting to promote that described drop adheres to the first pulse energy of the substrate of described printed circuit board (PCB), and then forms initial metal layer at described position over the substrate.Be in the second pulse of the described laser emission of the second pulse energy being greater than described first pulse energy through guiding with the described first surface through described donor substrate, and impinge upon on described donor film and be ejected into described initial metal layer from described donor film to bring out the second molten melt drop, and then repair described defect.
In one embodiment, described method guides laser beam with drop described in refuse after being included in and guiding described second pulse will repair the described metal annealing of described defect.Additionally or alternati, described method comprise guide laser beam awing described second drop is heated between described donor film and described printed circuit board (PCB).
According to embodiments of the invention, provide a kind of method that circuit is repaired in addition, it comprises the position comprising the defect in the conductive trace of the first metal material identified on printed circuit board (PCB).The transparent donor substrate with the first and second relative surfaces and the donor film being formed at second metal material comprising on described second surface with the galvanic couple current potential higher than described first metal material are positioned proximate to the described position of described defect, and wherein said second surface faces described printed circuit board (PCB).The pulse of laser emission is through guiding with the described first surface through described donor substrate, and impinge upon on described donor film and be ejected on the described position of the described defect described printed circuit board (PCB) from described donor film with the molten melt drop bringing out described second metal material, and then repair described defect and suppress galvanic corrosion simultaneously.
In one embodiment, described first metal material comprises copper, and described second metal material comprises copper alloy.
Additionally or alternati, described method is included in described position deposited sacrificial metal level on described second metal material of described defect, and wherein said expendable metal layer has the galvanic couple current potential lower than described second metal material.
According to embodiments of the invention, provide a kind of method that circuit is repaired in addition, it comprises the defect in the conductive trace identified on printed circuit board (PCB).Have the described position that the transparent donor substrate on the first and second relative surfaces and the metallic donor film of bag be formed on described second surface are positioned proximate to described defect, wherein said second surface faces described printed circuit board (PCB).The pulse of laser emission is through guiding with the first surface through donor substrate, and impinge upon to bring out on described rejected region that molten melt drop to be ejected into from donor film described printed circuit board (PCB) on described donor film, and then form the patch in order to repair described defect.After the described patch of formation, the described position of laser beam to described defect is guided to carry out reprocessing.
Usually, described conductive trace has predefined three-dimensional (3D) profile, and guides described laser beam to comprise from described position ablator to make described sticking patch conform to the described 3D profile of described conductive trace.In one embodiment, material described in ablation comprise with through select so that the first energy level being oxidized the superficial layer of described sticking patch applies the first laser pulse continuously, and there is the second laser pulse of second energy level larger than described first energy level, described second energy level through select with the superficial layer the second be alternately oxidized described in ablation, to remove described material from described sticking patch.Additionally or alternati, described laser beam is guided to comprise the 3D rendering forming described sticking patch, to monitor the shape of described sticking patch before and after material described in ablation.
In the disclosed embodiment, guide the described packet of pulses of described laser emission containing forming described sticking patch to have second lateral dimension larger than correspondence first lateral dimension of described conductive trace, and material described in ablation comprise described second lateral dimension reducing described sticking patch.Described second lateral dimension comprises at least one in height dimension and width dimensions.
Additionally or alternati, guide described laser beam to comprise and apply laser beam to be annealed by described patch.
According to embodiments of the invention, also provide a kind of method that circuit is repaired, it comprises the defect in the conductive trace identified on printed circuit board (PCB).Transparent donor substrate and the metallic donor film of bag be formed on described second surface with the first and second relative surfaces are positioned proximate to target area, and wherein said second surface faces described printed circuit board (PCB).The pulse of laser emission through guiding with the first surface through donor substrate, and impinges upon on described donor film and is ejected into described printed circuit board (PCB) to cover described target area from donor film with the two-dimensional array bringing out molten melt drop.
Usually, guide the described packet of pulses of described laser emission containing the cladding thickness being controlled described target area by the space density setting the described drop in described array.
In the disclosed embodiment, guide the described packet of pulses of laser emission containing being printed onto on described target area by described drop with hexagonal shaped pattern.
According to embodiments of the invention, provide a kind of equipment of deposition of material in addition, it comprises the transparent donor substrate with the first and second relative surfaces and the donor film be formed on described second surface.Described donor film has thickness δ and thermal diffusivity α and by thermal diffusion time τ=(δ 2/ 4 α) characterize.Dowelling assembly is configured to donor substrate to be positioned proximate to receptor substrate, and wherein second surface faces described receptor substrate.Optical package is configured to guide the pulse of the laser emission in the pulse duration of the twice of the thermal diffusion time with no more than donor film through the described first surface of described donor substrate, and impinges upon on described donor film and be ejected into receptor substrate from donor film with the drop bringing out melted material.
According to embodiments of the invention, provide a kind of equipment of deposition of material in addition, it comprises the transparent donor substrate with the first and second relative surfaces and the donor film be formed on described second surface, and described donor film comprises metal.Dowelling assembly is configured to donor substrate to be positioned proximate to receptor substrate, and wherein second surface faces described receptor substrate, and wherein between donor film and receptor substrate, has the gap of at least 0.1mm.Optical package is configured to guide the pulse of laser emission through the described first surface of described donor substrate, and impinges upon on described donor film and be ejected into described receptor substrate through described gap from donor film with the molten melt drop bringing out metal.
According to embodiments of the invention, provide a kind of equipment repaired for circuit in addition, it comprises the transparent donor substrate with the first and second relative surfaces and the donor film be formed on described second surface.Dowelling assembly is configured to the position of the defect be positioned proximate to by donor substrate in the conductive trace on printed circuit board (PCB), and wherein said second surface faces described printed circuit board (PCB).To carry out preliminary treatment to described position on the described position that optical package is configured to guide laser beam hits described defect on the printed circuit board, and guide thereafter the pulse of laser emission through the described first surface of described donor substrate, and impinge upon to bring out on described rejected region that molten melt drop to be ejected into from described donor film described printed circuit board (PCB) on described donor film, and then repair described defect.
According to embodiments of the invention, provide a kind of equipment repaired for circuit in addition, it comprises the transparent donor substrate with the first and second relative surfaces and the donor film be formed on described second surface.Dowelling assembly is configured to donor substrate to be positioned proximate to printed circuit board (PCB), and wherein second surface faces described printed circuit board (PCB).Optical package is configured to the first surface guiding the first pulse of laser emission through donor substrate, and impinge upon on described donor film and be ejected on the described position of the described defect described printed circuit board (PCB) to bring out the first molten melt drop from described donor film, wherein said first pulse has through selecting to promote that described drop adheres to the first pulse energy of the substrate of described printed circuit board (PCB), and then forms initial metal layer at described position over the substrate.Described optical package is configured to guide the described first surface of the second pulse through described donor substrate of the described laser emission being in the second pulse energy being greater than described first pulse energy, and impinge upon on described donor film and be ejected into described initial metal layer from described donor film to bring out the second molten melt drop, and then repair described defect.
According to embodiments of the invention, also provide a kind of equipment comprising the defect in the conductive trace of the first metal material for repairing on printed circuit board (PCB).Described equipment comprises the transparent donor substrate with the first and second relative surfaces and the donor film being formed at second metal material comprising on described second surface with the galvanic couple current potential higher than described first metal material.Dowelling assembly is configured to described position donor substrate being positioned proximate to described defect, and wherein second surface faces described printed circuit board (PCB).Optical package is configured to the described first surface guiding the pulse of laser emission through described donor substrate, and impinge upon on described donor film and be ejected on the described position of the described defect described printed circuit board (PCB) from described donor film with the molten melt drop bringing out described second metal material, and then repair described defect and suppress galvanic corrosion simultaneously.
According to embodiments of the invention, provide a kind of equipment repaired for circuit in addition, it comprises the transparent donor substrate with the first and second relative surfaces and the donor film be formed on described second surface.Dowelling assembly is configured to the position of the defect be positioned proximate to by donor substrate in the conductive trace on printed circuit board (PCB), and wherein said second surface faces described printed circuit board (PCB).Optical package is configured to the described first surface guiding the pulse of laser emission through described donor substrate, and impinge upon on described donor film and be ejected on the rejected region described printed circuit board (PCB) to bring out molten melt drop from described donor film, and then the patch formed in order to repair described defect, and be configured to further, after the described patch of formation, guide the described position of laser beam to described defect to carry out reprocessing.
According to embodiments of the invention, provide the equipment of the defect in a kind of conductive trace for repairing on printed circuit board (PCB) further.Described equipment comprises the transparent donor substrate with the first and second relative surfaces and the metallic donor film of bag be formed on described second surface.Dowelling assembly is configured to donor substrate to be positioned proximate to target area, and wherein second surface faces described printed circuit board (PCB).Optical package is configured to the first surface guiding the pulse of laser emission through donor substrate, and impinges upon on described donor film so that the two-dimensional array bringing out molten melt drop is ejected into described printed circuit board (PCB) to cover described target area from donor film.
By following together with accompanying drawing the detailed description to embodiments of the invention, will comprehend the present invention, wherein:
Accompanying drawing explanation
Fig. 1 is according to an embodiment of the invention for repairing the schematic, pictorial illustration of the system of circuit;
Fig. 2 is the schematic side elevation of the details of the system of showing Fig. 1 according to an embodiment of the invention;
Fig. 3 schematically illustrates according to an embodiment of the invention for repairing the flow chart of the process of circuit;
Fig. 4 A is the schematic sectional view of the rejected region prepared according to an embodiment of the invention in the printed circuit for repairing;
Fig. 4 B is the illustrative diagram diagram of the rejected region in the printed circuit preparing for repairing according to another embodiment of the present invention;
Fig. 5 is the schematic sectional view of the rejected region in the printed circuit preparing for repairing according to still another embodiment of the invention;
Fig. 6 is the schematic sectional view of the rejected region in the printed circuit preparing for repairing according to a further embodiment of the invention;
Fig. 7 is the schematic sectional view of the rejected region in the printed circuit according to an embodiment of the invention after preparing and repairing;
Fig. 8 A is according to an embodiment of the invention for preparing the schematic plan of the laser beam flying pattern of the rejected region for repairing;
Fig. 8 B and 8C is the schematic plan in order to prepare the well pattern for the position of repairing produced in the region of rejected region according to an embodiment of the invention;
Fig. 9 A shows the schematic sectional view of molten drop towards the rejected region in the printed circuit of the injection by LIFT driving at position according to an embodiment of the invention;
Fig. 9 B is the illustrative diagram diagram of the donor film according to an embodiment of the invention after the injection driven by LIFT of molten drop;
Figure 10 is the schematic cross-sectional explanation in the stage be illustrated according to an embodiment of the invention in deposited on substrates molten drop; And
Figure 11 A to 11C is the schematic diagram at the position on the substrate of the successive stages be illustrated according to an embodiment of the invention in deposited on substrates molten drop pattern.
Embodiment
General introduction
Along with printed circuit board (PCB) becomes more crypto set, has the conductive trace of more thin more tight spacing, the defect of repairing in trace becomes more and more difficult.LIFT is provided as the hope that can be used for effectively carrying out the method for repairing under these hard situations at least in theory.But, there is the LIFT system being suitable for carrying out at factory floor the reality of the feature of printed circuit reparation and also there is no develop and field out.
Hereafter described embodiments of the invention provide and strengthen the ability of LIFT and the method and apparatus of availability.The enhancing provided by these embodiments is particularly useful for the defect in the conductive trace by repairing from LIFT donor film metal injection drop on printed circuit board (PCB).But, the present invention is never limited to this application-specific background, and each side of embodiment described herein also can be applied to the printing based on LIFT in the receptor substrate of other kind when carrying out necessary change, comprise the printing of metal and nonmetallic materials.
In the art known for operplate printing based in the system of LIFT, the high energy laser pulse impinged upon on donor film causes the spraying of spraying minute metallic drop from described film.Use this type systematic to print very meticulous feature (such as, repairing the defect in printed circuit traces) therefore to need donor substrate to keep very near receptor substrate---be usually less than 50 μm far away.This very little donor-acceptor distance performs in actual repair at aligning and control system and produces some practical problems.
Some embodiments of the present invention overcome this difficult problem by working in the difference, novel field of pulsed laser energy and duration.Specifically, the embodiment disclosed uses shorter laser pulse---and be less than 5ns, and be usually less than 2ns, or be less than 1ns in many cases.The laser spot size on donor film thickness, pulse energy, donor film is selected together with shortest pulse duration, make in general, each laser pulse causes only with the single drop of the little deflecting angle of the surface normal relative to donor substrate (usually no more than about 5 millirads) directly to front injection donor material.Therefore, at least 200 μm or be even greater than 300 μm likely in a case where reliably and work exactly: donor substrate is relative with receptor substrate far away, and between donor substrate and receptor substrate, have the gap of at least 100 μm, and usually.
The principle of these embodiments is, the pulse duration of laser beam is roughly suitable with the diffusion time of the heat through donor film.Therefore, drop is through producing and spraying with controlled temperature, and it it is believed that lower than the drop temperature in most of LIFT systems known in technique.Specifically, for the donor film with thickness δ and thermal diffusivity α, by τ=(δ 2/ 4 α) provide characteristic thermal diffusion time.Described donor substrate is placed to close to receptor substrate, and the surface wherein it forming donor film faces described receptor substrate.There is the twice of the described thermal diffusion time of no more than described donor film and the pulse that may be equal to or less than the laser emission in the pulse duration of described thermal diffusion time with after through guiding with the outer surface through donor substrate, and to impinge upon on described donor film.These short pulses bring out the controlled injection from described donor film to the drop of the melted material receptor substrate.
Inventor finds, the laser beam loosely of the bundle spot size of at least ten times with the thickness δ being donor film is focused on injection donor film had for bringing out the desired good control to single drop.In some cases, spot size can be more than 20 times or even more than 40 times of donor film thickness.
Inventor finds, uses the reparation based on LIFT of technology described herein even also to work well in ordinary atmospheric conditions, and does not need to perform described reparation under inert conditions or in a vacuum.This type of is repaired to produce not had by the good conductive of sticking patch and is oxidized the substance of repair materials.
In some embodiments of the invention, after identifying the defect in the conductive trace on printed circuit board (PCB), guide laser beam to carry out preliminary treatment to the position of the defect on printed circuit board (PCB), apply LIFT process afterwards and repair described defect.For pretreated bundle can by for LIFT process same laser (but there is different bundle parameters) or produced by different laser.
Disclose some preconditioning techniques in the following description.These preconditioning techniques can be applied best in conjunction with novel LIFT technology as described above; But they alternately use in conjunction with other method based on LIFT known in technique.In certain embodiments, laser beam can be used the edge preform of the conductive trace of breach adjacent place, usually by ablation conductive trace, the edge causing conductive trace be tilted towards breach.Term " slope " in this context not only refers to continuous slope, but refers to the slope of classification, such as step structure.
Additionally or alternati, can in described conductive trace at defect adjacent place ablation groove to strengthen the adhesion of drop to conductive trace.Advantageously can arrange groove in one way, make the etching solution infiltration suppressing to use in the subsequent process stage between original metal and the metallic prosthetic sticking patch applied, this is because the corrosion causing weakening described sticking patch is tended in described infiltration.
In addition, additionally or alternati, can on the substrate of printed circuit board (PCB) scanning laser beam in case reparation near sites by described substrate roughening, and then promote drop is adhered to substrate.Usually, laser beam produce in surface having of well defining through selecting in case capture and grappling by the degree of depth of the molten drop of impact surface and the groove of size or well pattern.The density of pattern is selected based on the character of substrate and donor film material usually, to provide sufficient adhesion to meet production test criterion and application requirement.In certain embodiments, with through select to suppress the non-linear pattern of the infiltration of caustic etch solutions to produce well.
As another pre-treatment step, the oxide skin(coating) that laser beam can be used to carry out ablation usually formed on conductive trace, to promote drop to adhere to conductive trace.
When repairing the open circuit defect on printed circuit board (PCB), the original metal drop sprayed from donor film must adhere to dielectric substrate.As described above, although can be promoted by substrate roughening to adhere to, inventor finds, and the drop with higher thermal energy (that is, high temperature) tends to bounce-back and scattering when it clashes into substrate.Therefore, in some embodiments of the invention, in order to reduce scattering and overcome this problem, the inceptive impulse of the laser emission in LIFT process is through adjustment to have relatively low pulse energy, and described pulse energy is through selecting to make initial liquid drop arrive substrate with minimum unnecessary heat energy.These drops tend to solidify immediately when they land, and therefore on substrate, form initial metal layer at position.
Post laser pulse can desirably have larger pulse energy, this is because the molten melt drop that they are formed easily will adhere to initial metal layer, and therefore accumulates described layer with repair-deficiency.In fact, dripping compared with hydrothermal solution of being formed at higher energies is conducive to forming unified solid agglomerate, and it tends to have more machinery and chemical stability than the set of the drop of sclerosis.Can by guiding laser beam refuse drop and therefore metal annealing being strengthened the unification that drop becomes solid agglomerate after the deposition of drop.
Additionally or alternati, can (after initial metal layer has been deposited on substrate) use extra LASER HEATING to heat drop between donor film and printed circuit board (PCB) awing during the depositional phase.This heating can be used extra laser or be carried out by the same laser for generation of drop, latter event is premised on following condition: bundle is in time through being shaped to provide at least two pulses, first pulse is brought out drop and is sprayed, and second pulse is used for rear liquid droplets heating (having tens of typical delay to hundreds of nanosecond order of magnitude between the pulses).
Inventor metal trace based on the reparation of LIFT in the further problem observed be the galvanic corrosion of the metal repaired in sticking patch.In order to avoid this problem, in an embodiment of the present invention, the donor film for repairing comprises the metal component different from the material of the trace be just repaired.Specifically, the metal material in donor film is through selecting to have the galvanic couple current potential higher than trace.For example, in order to repair copper tracing wire, the copper alloy that with the addition of a small amount of another metal (being generally the such as noble metal such as gold, silver or platinum) can be used as LIFT donor.
Hereafter described Additional examples of composition of the present invention provides post-processing step, and it applies usually after the reparation step based on LIFT has completed.These steps such as can be directed to the stability and corrosion resistance that improve patch, and remove the undesired excess stock outside sticking patch volume.
Above-outlined and the technology hereafter further described can combinationally use best with the defect of repairing exactly, expediently and steadily in printed circuit traces.Or each in these technology can individually or with selected sub-portfolio use to strengthen the reparation based on LIFT using other system and method to perform.In addition, at least some in these technology can be used in other application, the printing based on LIFT of such as, 2 and 3 dimensional organization in the receptor substrate of other kind various.
System describes
Fig. 1 is according to an embodiment of the invention for repairing the schematic, pictorial illustration of the system of circuit.This system is similar to U.S. patent application case 13/146 mentioned above in design, the system described in 200, but comprises various improvement as described in this article.Show that this system and assembly thereof only illustrate the kind of the environment wherein can implementing technology described herein herein; And these technology can use the suitable equipment of other type and carry out similarly in other configuration.
The system of Fig. 1 builds around prosthetic appliance 20, and described prosthetic appliance operates the circuit be retained in mounting surface 24 (such as, printed circuit board (PCB) (PCB) 22).Term " printed circuit board (PCB) " and " PCB " are in this article for referring generally to the dielectric substrate of generation any kind of depositing electrically conductive trace thereon, and no matter dielectric type and for the process that deposits how.Equipment 20 can be used for repairing the various types of defects in PCB 22, but hereafter described embodiment is directed to the semiconductor defect repairing disappearance especially, such as, breach 42 in conductive trace 40, electric conducting material is added to PCB to repair by by position place by it.
Equipment 20 comprises optical package 26, and described optical package contains suitable laser for the operation be associated on LIFT and PCB 22 and optics, as shown in more detail in Fig. 2.(or laser is included in independent unit by the suitable optical connection that can use sub-assembly 26, does not show in figure).Usually, optical package also containing checking optics (not showing in figure), its before repairing, period and form the enlarged image of the rejected region on PCB 22 afterwards.In bridger, optical package 26 is positioned on the rejected region on PCB 22 by the linear movement along the axis of equipment 20 by the dowelling assembly of 28 forms.The operation of control unit 30 control both optical and dowelling assembly so that the inspection needed for carrying out and repair operation, as described below.
Usually, control unit 30 communicates with operator's terminal 32, and described operator's terminal comprises all-purpose computer, and described all-purpose computer comprises processor 34 and display 36 and suitable user interface and software.As shown in illustration 38, the defect that PCB 22 finds can be presented on a display 36, such as, breach 42 in trace 40.The position 44 of each this type of defect is identified by processor 34.Processor 34 forms the rehabilitation plan will applied at each this type of position 44 place subsequently, usually comprise by carried out by equipment 20 preliminary treatment, LIFT and post-processing step, as described in this article.Can under operator control, or the most usual combination by automation and manual step, automatically or manually carry out defect recognition by processor 34 and repair the step of planning.Equipment 20 implements described plan, and result is that defect 44 is filled out by the metallic prosthetic sticking patch 46 produced by LIFT.
Fig. 2 shows equipment 20 according to an embodiment of the invention and the schematic side elevation of the especially details of optical package 26.Laser 50 is emitted through the impulse radiation that suitable optics 52 is concentrated.Described laser can comprise the Pulse Nd that (such as) has the output of doubling frequency: YAG laser, and it was permitted by control unit 30 control impuls amplitude and the duration expediently.Optics 52 can control similarly to adjust position and the size of the focal spot formed by laser beam.Therefore can likely by using identical laser 50 for the some or Overall Steps in preliminary treatment, LIFT and post-processing step to the suitable adjustment of laser and optical parametric.
Or the additional laser device (not shown) with different bundle characteristics can be used for some steps in these steps.Following situation is desirable: this extra laser (if use) operates and arranges to simplify optics under the wavelength identical with laser 50.
Display optics sub-assembly 26 in LIFT configuration in fig. 2.Bundle from laser 50 focuses on donor sheet 54 by optics 52, and described donor sheet comprises the donor substrate 56 with donor film 58.Usually, substrate 56 comprises transparent optical material, such as glass or plastic sheet, and in order to repair trace 42, film 58 comprises suitable metal material, such as copper or copper alloy, and it has the film thickness of about 1 μm.Bundle (by moving composite member 28) from laser 50 is aimed at the position of defect 42, and donor sheet 54 is positioned at above described position with the desired gap width D of substrate 41 apart from PCB 22.Usually, as described earlier, this gap width is at least 0.1mm, and inventor has found to use the gap width of 0.2mm or even 0.5mm or larger, and it stands the suitable selection to parameters of laser beam, as described below.Laser beam is focused on film 58 by the outer surface of substrate 56 by optics 52, so cause from film by the drop of motlten metal spray cross gap and be ejected into PCB 22.Hereinafter with reference Fig. 9 A/B and 10 describes this LIFT process in more detail.
Process streams
Fig. 3 schematically illustrates according to an embodiment of the invention for repairing the flow chart of the process of circuit.For the sake of clarity, the assembly of reference device 20 and PCB 22 describes described process, but as described earlier, can carry out the step of described process equally when carrying out necessary change in other applied environment.
In the process of Fig. 3, in pretreatment stage 60, first preliminary treatment is carried out to rejected region 44, to strengthen the validity in the operplate printing stage 62 followed closely.Pretreatment stage 60 can comprise some operations, comprises one or many person in following each:
Conductor preliminary forming step 66, wherein from region removing conductive material to repair.Usually; the edge of the trace 40 near defect 42 to strengthen the adhesion (especially protect corrosive chemical that the sticking patch of applying be not used in subsequent process step etched away in) of patch to existing conductor through being shaped, and is permitted described sticking patch and is met the original contour of the trace be repaired.Additionally or alternati, the excess metal be associated with defect can be removed, the such as distortion of trace 40 at this place in stage.Hereinafter with reference Fig. 4 A/B, 5 and 6 describes step 66 in more detail.
Substrate preparation process 68, wherein processes to strengthen that molten drop is adhered to substrate to the substrate 41 near rejected region 44.Be useful in this step by laminated substrate roughening, that is, produce well and/or groove in the substrate, it increases the surface area that drop will adhere to.Hereinafter with reference Fig. 8 A to 8C describes step 68 in more detail.
Oxide removal step 70, wherein removes the usual oxide layer (such as, cupric oxide) formed on the surface of trace 40 along with the time to strengthen the adhesion of molten drop to existing trace.Inventor finds, is launched have about 1J/cm by control laser 50 on trace 40 2the pulse of flux (F), can rapidly and effectively remove copper oxide.(in this description and in detail in the claims, suppose that Gaussian laser beam and the amount of flux calculated refer to that pulse energy is divided by spot diameter, specifying spot diameter according to 4 σ width)
Once get out rejected region, in the configuration that equipment 20 is shown in fig. 2, operate to perform actual repair in printing stage 62.This stage is illustrated in 9A/B and 10.
After filling breach 42 with sticking patch 46 in the stage 62, some additional steps can be performed to strengthen the robustness of repairing in post-processing stages 64.Usually, repairing position may be so strong not as original metal trace 40, and therefore easily damages in the subsequent working-up stages of PCB 22 and in the use of PCB.In order to alleviate this type of fragility, the stage 64 can comprise some operations, comprises one or many person in following each:
Cleaning 72, wherein laser 50 is from substrate 41 ablation excess stock so that finishing is repaired sticking patch 46 and removed any chip of built up on surfaces around.
The levelling step 73 of sticking patch, wherein laser 50 is from sticking patch 46 ablator to make sticking patch conform to original PCB design principle.
Differential annealing step 74, the drop of the metal wherein in laser 50 refuse sticking patch 46 is to make sticking patch and especially its outer surface smoother and evenly.
Layer print steps 76, is wherein deposited on extra sacrifice layer on sticking patch 46.
Hereafter special is describe the general principle of these steps and the details of its embodiment in the paragraph of " reprocessing (POST-TREATMENT OF REPAIRSITES) to repairing position " at title.
To the preliminary treatment of repairing position
Fig. 4 A is the schematic sectional view of the rejected region prepared according to an embodiment of the invention in the printed circuit for repairing.This embodiment solves the problem that inventor finds: when applying LIFT and repairing the breach 42 in trace 40, micro-interstices is tended to be formed in the type metal in the sharp corner of indications of fracture.The quality that these micro-interstices impairment is repaired, introduces parasitic capacitance, and during subsequent, weakens metallic integrity, because etchant solutions can penetrate in space.Therefore, in step 66 place, application laser 50 carrys out ablation trace 40 to cause the edge of trace to tilt towards breach.
In fact, the continuous slope of ablation is difficult, but inventor has found by ablation steps shape slope 80 to realize equivalent effect, as shown in Figure 4 A.Usually, can there is significant micro-interstices in 10 μm or larger shoulder height, and the step therefore in slope 80 is less than 10 μm high is desirable.Inventor has found that the step of 7 μm provides good result.In order to produce desired step, optics 52 is usually through adjusting with the spot diameter providing about 5 μm on trace 40.
Fig. 4 B is the illustrative diagram diagram of the rejected region in the printed circuit preparing for repairing according to another embodiment of the present invention.This embodiment is similar to Fig. 4 A, and difference is, in this example, breach 42 has appeared between trace 40 and broader pad 82.In the case, in the step-like slope 84 that step 66 place ablation pad 82 launches in two dimensions with generation.Be appreciated by those skilled in the art that the substituting slope of the object for step 66 configures and is regarded as within the scope of the invention.
Usually, the trace in PCB is formed with multiple pantostrat, interlocks with the overlapping layers of dielectric substrate.Reparation described herein can perform in any one in the layer of conductor, afterwards lower one deck of covering dielectric.But before the described dielectric of covering, application " soft etching " process is so that the surface of clean PCB usually.Inventor finds, and the patch undercutting that the interface between sticking patch and existing trace will just have been formed is tended in this soft etching.Some possible solution to this problem is hereafter described.
Fig. 5 is the schematic sectional view of the rejected region prepared according to an embodiment of the invention in the printed circuit for repairing.In the case, expanding table scalariform slope 80 is come by adding wider upper step 86.Therefore, even if there are some undercutting due to soft etching, the contact area between sticking patch 46 and trace 40 guarantees good adhesion by being still enough to.
Fig. 6 is the schematic plan of the rejected region in the printed circuit preparing for repairing according to still another embodiment of the invention.In the case, laser 50 operates with the groove 88,90 in the upper face of ablation trace 40.Therefore these grooves by the type metal increasing sticking patch and the contact area underlied between trace, and strengthen adhesion.Groove or can be crossed over both traces or more and settle along the length of trace, as shown in Figure 6.(combination of two trace direction of showing in the drawings is particularly useful for and prevents etching solution from infiltrating below the side of sticking patch.) inventor is by focusing on the spot diameter of 5 μm to 9 μm on the surface of trace 40 with every pulse 3 to 4 μ J operate lasers 50 and obtain and producing the good result in this little groove by laser beam.Or well pattern can be used for similar object, such as (e.g.) shown in Fig. 8 B and 8C.
Fig. 7 is the schematic sectional view of the rejected region in the printed circuit according to an embodiment of the invention after preparing and repairing.In fact this figure does not belong to step 68, because it is illustrated in the defect after the deposition of the sticking patch 46 in printing stage 62.However, why it is shown it is because it provides the further solution of the problem of the patches adhere to the reduction after soft etching here.In the case, in the stage 62, molten metal drop is deposited on trace 40, makes sticking patch 46 extend above the preform edge of trace and extend beyond described preform edge.Therefore, the edge 92 of sticking patch is outstanding and therefore protect interface between sticking patch and trace not by undercutting on the top of trace 40.This solution can use independently or combinationally use with preliminary treatment solution as described above.
Or, sticking patch 46 can be printed as and conform to definitely with the dimensional profile of trace 40, and not need to add edge 92.Where necessary, any excess metal can be removed in step 73 place, as described further below.
Fig. 8 A is according to an embodiment of the invention for preparing the schematic plan of the laser beam flying pattern 100,102 for the rejected region repaired in step 68 place.Type for the substrate in PCB to be repaired is depended on to the needs of step 68.Substrate roughness has for strengthening the adhesion of molten drop to substrate, and the molten drop be ejected on PCB in step 62 place can not adhere to well when described substrate is too smooth.In order to alleviate this problem, can on substrate scan laser 50 bundle in case reparation near sites by substrate roughening, and then promote drop is adhered to substrate.
Any suitable scan pattern can be used to come for this object.For example, the orthogonal grating pattern 100 and 102 shown in Fig. 8 A can be used for forming the microlaser cavity array in substrate.Setting laser device 50 provides suitable result with the pulse (having the spacing of between the spot diameter of about 13 μm on substrate and scan line about 20 μm) of launching about 2 μ J.Desirably pattern 100 and 102 extends beyond thereafter by the developed width of the sticking patch of formation in the stage 62.
Fig. 8 B is the schematic plan of the pattern 103 in order to prepare the well 101 for the position of repairing produced in the region of rejected region according to an embodiment of the invention.Well 101 is included in the aperture with the degree of depth usually in the scope of 2 to 8 μm formed in substrate 41.Laser parameter is usually through adjusting such as, to make the diameter of well 101 slightly be greater than desired liquid-drop diameter (it depends on LIFT condition), in the scope of 4 to 10 μm.Distance between contiguous well is less, is usually less than well diameter, to provide the higher well density in restoring area.
Fig. 8 C is the schematic plan of the pattern 105 of the well 101 produced in the region of rejected region according to alternate embodiment of the present invention.Illustrated by figure like this, well 101 does not need to be arranged in line grating, and in fact other layout can be preferably, for increasing well density and suppressing to permeate in the space of solvent between well.For example, the well 101 in Fig. 8 C arranges with general triangular sequence, wherein adds described pattern in a jumble to by a certain amount of.Therefore, if the equivalent path that is arranged in line grating than well of the path, interface 106 that can cross between well of solvent is significantly longer and narrower.
LIFT prints
Fig. 9 A is the schematic sectional view of the rejected region 42 showing the injection by LIFT driving of molten drop 106 from donor film 58 towards position according to an embodiment of the invention.This figure illustrates the effect using its duration and thermal diffusion to pass time needed for film suitable laser pulses irradiate film 58.As described earlier, for the donor film with thickness δ (that is, the vertical dimension in Fig. 9 A) and thermal diffusivity α, the thermal diffusion time through film is τ=(δ 2/ 4 α).The thermal diffusivity α of copper is about 1cm 2/ sec, makes the copper film for thickness δ=1 μm, and τ is roughly 0.25ns.
When being less than the donor metal film of thickness of about 200nm, the technology that the LIFT to molten drop known in technique prints uses the laser pulse duration of at least 10ns usually.In this system, much longer times of pulse width ratio thermal diffusion time, result is that the melting zone (fusion pool) extended is formed in film, and it has the injection character being similar to viscous liquid layers.In the case, many less drops are sprayed with poor directivity.In order to deposit drop exactly in this system, must donor and acceptor be placed be close together very much.
Comparatively speaking, in the present embodiment, the laser pulse duration of much shorter is used.It is still further preferred that the pulse duration can be restricted to the twice of no more than thermal diffusion time τ, and can likely equal or even be less than τ.In other words, the copper film liquid droplets of subnanosecond laser pulse from thickness δ=1 μm is usually used.Or in some conditions, pulse can be grows to 2ns or even 5ns in some cases.Usually, laser pulse has the beam energy in the scope of 3 μ J to 4 μ J.For at least some LIFT step, larger laser beam region is desirable, and it has the beam diameter of the thickness δ ten times being at least donor film, the beam diameter of such as 20 to 30 μm.
Fig. 9 B is the illustrative diagram diagram of the donor film 58 according to an embodiment of the invention after the injection driven by LIFT of drop 106.The selection of laser pulse parameters as described above causes " volcano " pattern 104 in donor film.This " volcano injection " system causes launches single drop 106 with higher directivity, usually in about 5 millirads of film surface normal.
The important results of the high directivity that drop sprays can be permitted the relative large clearance D between donor sheet 54 with receptor substrate 41 and can not damage printing accuracy.When the pulse strikes that donor substrate 56 under these conditions easily can be positioned in laser emission is on donor film, film 58 is apart from receptor substrate at least 0.1mm, and can usually be positioned to apart from receptor substrate at least 0.2mm, or even has 0.5mm so far away.
Figure 10 is the schematic cross-sectional explanation in the stage be illustrated according to an embodiment of the invention in the rejected region place plated metal drop process on substrate 41.In this embodiment, originally thin copper layer 110 is printed in dielectric substrate 41 to be used as Seed Layer.Thereafter, extra molten drop 112 is deposited on layer 110, until accumulated sufficient material with repair-deficiency.
First stage in Figure 10 is landed by copper drop and interacts to characterize with substrate self (normally organic lamination), and in the second step, drop lands and directly do not interact with substrate in print copper.The molten metal drop with high heat energy that substrate lands usually rebounds and leaves substrate and landing apart from a certain distance of initial target.This rebound effect causes the efficiency in the larger floor space produced in Seed Layer and reduction.In order to avoid this effect, in an embodiment of the present invention, laser pulse parameters (energy, pulse duration and Shu great little) is controlled, as described above, the large molten melt drop relative to process stage after a while with the temperature of reduction is sprayed during making to produce initiation layer 110 on substrate 41 from film 58.After shock substrate, these large drops tend in position adhere to and spread at once, instead of bounce-back.
When during work, carrying out width and the height of key-course 110 by tuning laser pulse energy in this " diffusion system ".Pattern meticulousr (that is, line to be repaired is narrower) is lower for the pulsed laser energy in this stage.
On the other hand, in order to the structure of accumulation additional droplets 112, higher pulsed laser energy is desirable, thus the efficiency of the process of raising and quality.Higher pulse energy produces hotter drop, and it tends to be molten into layer 110 and melts each other to form more solid agglomerate, instead of the accumulation of the bead of independent sclerosis.
In order to produce sticking patch above on the target area (such as, the reparation position in the example presented) of substrate 41, laser emission is applied to donor film to cause the drop two-dimensional array spraying the target area covering receptor substrate.When printing two-dimentional drop 112, the growth rate of the thickness of sticking patch depends on the overlap between printing situation and drop.These printing parameters also define porosity or the packing of print structure.For example, minimum range D=Dx=Dy between laser spot on given donor film 58, define drop space density by integer k, its instruction, along the number of the drop of each row or column printing in the target area on substrate 41, makes drop distribute equably with spacing dx=dy=D/k.In most of actual conditions, to the constraints of the parameter of the LIFT printing process in the constraints of locking equipment 20 and equipment, dimension D is about 30 μm.The sticking patch thickness h of being added by every one deck kit is the discrete function of integer k.Inventor finds, in general, and h k≈ h 0k 2, wherein h 0be constant and usually change between 0.1 μm and 0.5 μm.
Therefore, the cladding thickness in control objectives region is carried out by the space density of the drop in suitably setting array.In order to realize good Thickness resolution, therefore k is little is as far as possible desirable, and but then, large value k is desirable, to realize more compact structure (it reduces resistance, especially at liquid drop boundary place).In situation typical, given D ≈ 30 μm, inventor finds, and the value of k should be not less than seven.Therefore, Thickness resolution h kit is about 5 μm or larger.
A kind of mode (although having this to limit) realizing the meticulousr height resolution of the sticking patch of LIFT printing is added by sticking patch to print to the height larger than the height of actual needs, and subsequently levelling step 73 place ablation sticking patch (be used in the laser that the laser of print steps 62 or middle use is identical, or another laser).The ablation of unnecessary height is made to the height resolution likely realizing being less than 1 μm, it depends on the laser for this object.Or local mechanical grinding can be used for this object.Additionally or alternati, equipment 20 can comprise transducer (not shown), and it performs the three-dimensional measurement to sticking patch, to provide sticking patch altitude feedback during printing and/or follow-up ablation.
Figure 11 A to C shows the schematic diagram by the described position of molten drop pattern deposition on the substrate 124 of successive stages repairing position 120 place according to an embodiment of the invention.In this embodiment, drop 122,124,126 is printed on substrate 124 to fill patch area in mode that may be the compactest with hexagonal honeycomb pattern.
As in previous case, by integer density k in x and y direction (horizontal and vertical in Figure 11 A to C) divide the unit (in the case not necessarily square) of dimension D x × Dy, thus provide horizontal and vertical drop spacing dx and dy, as defined above.Printing has the first hexagonal array of the drop 122 of these spacing as illustrated in figure 11 a.Optical package 26 is shifted (or vice versa) by vector relative to reparation position 120:
v &RightArrow; 2 = dx 2 x &RightArrow; - dy 3 y &RightArrow;
To print extra droplet array 126, it fills the part in the gap between drop 122 as shown in Figure 11 B.By another droplet array 128 being printed in the displacement of reparation position by vector:
v &RightArrow; 1 = - 2 &CenterDot; dy 3 y &RightArrow;
Therefore all gaps between drop are filled, as shown in fig. 11c.Described displacement can be performed by any desired order, and the not necessarily displacement shown in Figure 11 A to C.
Optionally, the temperature by guiding laser beam drop to be heated to the drop 112 increasing shock layer 110 further awing between donor film 58 and printed circuit board (PCB).By the method (not showing in figure), likely drop temperature is increased to above the maximum temperature realized by course of injection self.Laser beam is after each drop has been formed and advance to from donor film the time durations that acceptor spends at each drop extra heat energy is supplied to each drop.
Can such as realize this with the additional laser radiation of the pulse laser beam conllinear for liquid droplets additionally heat by providing.Described extra laser beam through the hole of the volcano pattern 104 be formed in donor film, and can continue subsequently to molten drop heating, until it clashes into acceptor.To be formed and to carry out heating to drop be pure thermal process after donor film departs from drop, and avoided the possible distortion of the mechanical injection of the drop from film.In principle, can in this way drop be heated to close to its evaporating temperature.Therefore, the drop through heating at once has some metals that sufficient heat energy comes in the metal that refuse previously deposited after landing, and therefore strengthens the adhesion of described drop.
Suppose that pulse long enough is effectively to heat droplet size when not evaporating drop surface, for the additional laser Shu Kewei CW that heats of drop sprayed or pulse.Pulse duration should be desirably long than the thermal diffusion time in molten metal drop, but shorter than the flight time of drop from donor to acceptor (it typically is Microsecond grade).
As for drop heating technique as described above, supplement or substitute, be single agglomerate by sticking patch annealing being strengthened the droplet solidification repaired in sticking patch 46 in post-processing stages 64 in step 74 place.Use the surperficial refuse of pulse laser (usually use the pulse of 3 μ J to 4 μ J and repair on sticking patch at 5 μm to the focused spot diameter within the scope of 13 μm) strengthen the total quality of uniformity, surface flatness and metal level, thus make comparatively to be not easy to be subject to chemical erosion.The refuse entering printed metal layer is darker, and the duration of laser pulse is longer because heat transfer to enter metal darker and cause the refuse of more substrate.
Or print to unnecessary height if added by sticking patch, as described above, and repaired downwards by the laser ablation at step 73 place subsequently, additionally smoothly can be of so performing in step 74 place is unnecessary.Inventor finds, and the smoothness being similar to the smoothness realized by annealing can be provided from patch faces ablation 3 μm to 4 μm using as the benefit of adding, especially true when ablative laser is to operate compared with high pulse energy.
Perform in the PCB processing of microetch step (being also called soft etching) usually between the lamination of pantostrat, to remove oxide and the good contact promoted between layer and good adhesion.After reparation period, perform this type of microetch similarly, wherein add metal in the place of disappearance, as described above.Therefore, importantly, the metal material for repairing can bear microetch process.
The interface that microetch is easy between sticking patch 46 and trace 40 causes galvanic corrosion.Galvanic corrosion is the process that potential difference between two metallic member wherein contacting drives corrosivity electrochemical effect, and when metallic member is covered by solution (because they are during microetch), this effect is accelerated by electrolytic process.Area ratio between in question two metallic member also has crucial effect to corrosion rate.Therefore, when the zonule of type metal sticking patch 46 even has the current potential more lower slightly than much bigger original copper circuit trace 40, sticking patch also may be fallen by fast erosion, likely within about several seconds.This potential difference is attributable to other metal ion a small amount of in the copper tracing wire of PCB and occurs, described other metal ion a small amount of can relative to the current potential slightly raising these traces for the fine copper drop repaired in sticking patch.
In order to overcome this problem, donor film 58 can comprise extra metal material, and it has the galvanic couple current potential higher than copper.In other words, film 58 generally includes the copper alloy slightly adulterated, and it is enough to make copper alloy more negative, so that protection printing sticking patch.Usually, the noble metal (such as, Ag, Au or Pt, or the combination of this little metal) even adding low percentage (about 1% to 2%) will be enough to provide desired protection.
To the reprocessing of repairing position
Supplementing or substituting as step as described above, can apply various process to protect sticking patch 46 to damage from corrosion and other in post-processing stages 64.For example, annealing steps 74 as described earlier can have the corrosion resistance for strengthening sticking patch, because it reduces the outer surface regions being exposed to chemical erosion.By the drop on the surface of refuse sticking patch 46, step 74 also reduces and easily suffers the drop of corrosive attack and the interface zone of drop.
Additionally or alternati, expendable metal layer can be printed on sticking patch 46.This sacrifice layer generally includes the metals such as such as tin, and it has the galvanic couple current potential lower than the copper (or other metal) for generation of sticking patch.Sacrifice layer will be etched away subsequently during microetch step, but sticking patch that reservation is underlied.Effective sacrifice layer can also be printing pure copper layer, or is anode layers of copper (being become by the copper of the trace with comparatively low potential metal (such as, Al, Mg or other suitable element)) in addition.
As described earlier, can applying step 73 (Fig. 3) with levelling (interpolation) patch 46 with meet original PCB design rule and remove unnecessary sticking patch height and/or width.Usually, in the end of step 62, patch has the lateral dimension larger than trace 40, means sticking patch thicker than the original line thickness of trace 40 (in either the vertical or horizontal direction or both).In step 73, stepping laser ablation process can be used to come little by little to remove excess metal from the top layer of sticking patch 46, to make the value of the gross thickness of sticking patch (lateral dimension) close to the value of original trace 40.
Same class process can be applied in step 62 and 73 places: can be printed onto on substrate 41 by drop by laser 50 in step 62 place by the width larger than the original line width of trace 40 relative to patch width.Subsequently, in step 73 place, laser is from the side of sticking patch and top ablation excess stock.This ablation also realizes the desirable effect of the side of level and smooth sticking patch, therefore increases its uniformity and reduces fragility to chemical erosion, as above explain.
Can sentence iteration two step process in step 73 and remove excess metal, wherein operate lasers under different energy levels: in a first step, low energy pulses launched by laser, and it is enough to cause the oxidation to the surface of sticking patch 46 but not ablation.In the second step, high energy pulse launched by laser, the oxide skin(coating) that its ablation is formed in a first step.Repeat this two steps iteratively, until removed the material of institute's desired amount.
Can perform step 73 in conjunction with series connection 3D imaging, it promotes to be shaped that the original 3D shape of itself and trace 40 is coincide to the 3D of sticking patch 46.Identical optical object lens for concentrated laser beam can be used to capture 3D rendering information.Specifically, by obtaining some images, by the focusing of the object lens be slightly shifted between image, depth information can be extracted to recover 3D structure.
To understand, embodiment as described above is quoted by the mode of example, and the invention is not restricted to the content of particular display and description above.But scope of the present invention comprises combination and the sub-portfolio of various feature as described above, and those skilled in the art is reading its change do not disclosed in the prior art of at once expecting and amendment after aforementioned description.

Claims (88)

1., for a method for deposition of material, it comprises:
There is provided the transparent donor substrate with the first and second relative surfaces and the donor film be formed on described second surface, described donor film has thickness δ and thermal diffusivity α and by thermal diffusion time τ=(δ 2/ 4 α) characterize;
Described donor substrate is positioned proximate to receptor substrate, and wherein said second surface faces described receptor substrate; And
Guide the pulse with the laser emission in the pulse duration of the twice of the described thermal diffusion time of no more than described donor film through the described first surface of described donor substrate, and impinge upon on described donor film and be ejected into described receptor substrate from described donor film with the drop bringing out melted material.
2. method according to claim 1, wherein said donor film comprises metal.
3. method according to claim 2, wherein δ≤1 μm, and the described pulse duration of wherein said laser pulse be less than 5ns.
4. method according to claim 3, the described pulse duration of wherein said laser pulse is less than 2ns.
5. method according to claim 2, described pulse is wherein guided to comprise with through selecting with the first pulse promoting the first pulse energy described drop being adhered to described receptor substrate to guide described laser emission, and then initial metal layer is formed in described receptor substrate, and then guide the second pulse of described laser emission with the second pulse energy being greater than described first pulse energy, make described drop accumulate described metal in described initial metal layer.
6. method according to claim 2, wherein said receptor substrate is printed circuit board (PCB), and the deposition wherein guiding described pulse to comprise to bring out described metal is to repair the defect in the conductive trace on described printed circuit board (PCB).
7. method according to claim 1, the wherein said pulse duration is less than or equal to the described thermal diffusion time of described donor film.
8. method according to claim 1, when the described pulse strikes that wherein said donor substrate is positioned in described laser emission is on described donor film, described second surface is apart from described receptor substrate at least 0.1mm.
9. method according to claim 8, when the described pulse strikes that wherein said donor substrate is positioned in described laser emission is on described donor film, described second surface is apart from described receptor substrate at least 0.2mm.
10. method according to claim 1, wherein guides described pulse to comprise concentrated described laser emission to impinge upon on described donor film by the bundle spot size of ten times of the described thickness δ being at least described donor film.
11. methods according to claim 1, wherein guide the described pulse of described laser emission to comprise and described laser emission are applied to described donor film to cause the droplet array spraying the target area covering described receptor substrate.
12. 1 kinds of methods for deposition of material, it comprises:
There is provided the transparent donor substrate with the first and second relative surfaces and the donor film be formed on described second surface, described donor film comprises metal;
Described donor substrate is positioned proximate to receptor substrate, and wherein said second surface faces described receptor substrate, and wherein between described donor film and described receptor substrate, has the gap of at least 0.1mm; And
Guide the pulse of laser emission through the described first surface of described donor substrate, and impinge upon on described donor film and be ejected into described receptor substrate through described gap from described donor film with the molten melt drop bringing out described metal.
13. methods according to claim 12, wherein when the described pulse strikes of described laser emission is on described donor film, the described gap between described donor film and described receptor substrate is at least 0.5mm.
14. methods according to claim 13, wherein said receptor substrate is printed circuit board (PCB), and the deposition wherein guiding described pulse to comprise to bring out described metal is to repair the defect in the conductive trace on described printed circuit board (PCB).
15. 1 kinds of methods of repairing for circuit, it comprises:
Identify the defect in the conductive trace on printed circuit board (PCB);
The position of laser beam to the described defect on described printed circuit board (PCB) is guided to carry out preliminary treatment; And
After preliminary treatment is carried out to described position, the transparent donor substrate and the donor film comprising metal be formed on described second surface with the first and second relative surfaces are positioned proximate to the described position of described defect, wherein said second surface faces described printed circuit board (PCB); And
Guide the pulse of laser emission through the described first surface of described donor substrate, and impinge upon to bring out on described rejected region that molten melt drop to be ejected into from described donor film described printed circuit board (PCB) on described donor film, and then repair described defect.
16. methods according to claim 15, wherein guide described laser beam to comprise and remove metal by carrying out laser ablation from described position.
17. methods according to claim 16, wherein said defective packets containing the breach in described conductive trace, and wherein removes described metal and is included in described breach adjacent place by the edge preform of described conductive trace.
18. methods according to claim 17, wherein comprise conductive trace described in ablation and tilt towards described breach to cause the described edge of described conductive trace by described edge preform.
19. methods according to claim 18, wherein conductive trace described in ablation is included in described conductive trace and forms stepped slope.
20. methods according to claim 17, to be wherein included in described conductive trace ablation groove to strengthen the adhesion of described drop to described conductive trace by described edge preform.
21. methods according to claim 17, wherein guide the described pulse of described laser emission to be included on described conductive trace and deposit described molten melt drop to extend above described preform edge and to extend beyond described preform edge.
22. methods according to claim 17, wherein guide the described pulse of described laser emission to be included on described conductive trace and deposit described molten melt drop to form the sticking patch conformed to the profile of described conductive trace in described rejected region.
23. methods according to claim 15, the substrate wherein guiding described laser beam to be included in described printed circuit board (PCB) scans described laser beam with at described near sites by described substrate roughening, and then promote described drop to adhere to described substrate.
24. methods according to claim 23, wherein scan described laser beam and are included in the pattern forming well in described substrate.
25. methods according to claim 24, the described pattern of wherein said well is non-directional.
26. methods according to claim 15, wherein guide described laser beam to comprise and use described laser beam at described near sites from described conductive trace ablation oxide skin(coating), to promote described drop to adhere to described conductive trace.
27. methods according to claim 15, wherein repair described defect and are included in described conductive trace and form sticking patch, and wherein said method be included in repair described defect after guide described laser beam to carry out reprocessing to described sticking patch.
28. 1 kinds of methods of repairing for circuit, it comprises:
Identify the position of the defect in the conductive trace on printed circuit board (PCB);
The transparent donor substrate and the donor film comprising metal be formed on described second surface with the first and second relative surfaces are positioned proximate to described printed circuit board (PCB), and wherein said second surface faces described printed circuit board (PCB);
Guide the described first surface of the first pulse through described donor substrate of laser emission, and impinge upon on described donor film and be ejected on the described position of the described defect described printed circuit board (PCB) to bring out the first molten melt drop from described donor film, wherein said first pulse has through selecting to promote that described drop adheres to the first pulse energy of the substrate of described printed circuit board (PCB), and then forms initial metal layer at described position over the substrate; And
Guide the second pulse being in the described laser emission of the second pulse energy being greater than described first pulse energy through the described first surface of described donor substrate, and impinge upon on described donor film and be ejected into described initial metal layer from described donor film to bring out the second molten melt drop, and then repair described defect.
29. methods according to claim 28, when described first and second pulse strikes that wherein said donor substrate is positioned in described laser emission are on described donor film, described second surface is apart from described printed circuit board (PCB) at least 0.1mm.
30. methods according to claim 28, and it guides drop described in laser beam refuse will repair the described metal annealing of described defect after being included in described second pulse of guiding.
31. methods according to claim 28, and it comprise guide laser beam awing described second drop is heated between described donor film and described printed circuit board (PCB).
32. 1 kinds of methods of repairing for circuit, it comprises:
Identify the position comprising the defect in the conductive trace of the first metal material on printed circuit board (PCB);
The transparent donor substrate with the first and second relative surfaces and the donor film that is formed at second metal material comprising on described second surface with the galvanic couple current potential higher than described first metal material are positioned proximate to the described position of described defect, wherein said second surface faces described printed circuit board (PCB); And
Guide the described first surface of pulse through described donor substrate of laser emission, and impinge upon on described donor film and be ejected on the described position of the described defect described printed circuit board (PCB) from described donor film with the molten melt drop bringing out described second metal material, and then repair described defect and suppress galvanic corrosion simultaneously.
33. methods according to claim 32, wherein said first metal material comprises copper, and described second metal material comprises copper alloy.
34. methods according to claim 32, and it is included in described position deposited sacrificial metal level on described second metal material of described defect, wherein said expendable metal layer has the galvanic couple current potential lower than described second metal material.
35. 1 kinds of methods of repairing for circuit, it comprises:
Identify the defect in the conductive trace on printed circuit board (PCB);
The transparent donor substrate and the donor film comprising metal be formed on described second surface with the first and second relative surfaces are positioned proximate to the position of described defect, wherein said second surface faces described printed circuit board (PCB);
Guide the described first surface of pulse through described donor substrate of laser emission, and impinge upon to bring out on described rejected region that molten melt drop to be ejected into from described donor film described printed circuit board (PCB) on described donor film, and then form the patch in order to repair described defect; And
After the described patch of formation, the described position of laser beam to described defect is guided to carry out reprocessing.
36. methods according to claim 35, wherein said conductive trace has predefined three-dimensional 3D profile, and wherein guides described laser beam to comprise to conform to the described 3D profile of described conductive trace from described position ablator to make described sticking patch.
37. methods according to claim 36, wherein material described in ablation comprises applying the first laser pulse through selection continuously with the first energy level of the superficial layer being oxidized described sticking patch, and there is the second laser pulse of second energy level larger than described first energy level, described second energy level through select with the superficial layer the second be alternately oxidized described in ablation, to remove described material from described sticking patch.
38. methods according to claim 36, wherein guide described laser beam to comprise the 3D rendering forming described sticking patch, to monitor the shape of described sticking patch before and after material described in ablation.
39. methods according to claim 36, wherein said conductive trace has the first lateral dimension, and wherein guide the described pulse of described laser emission to comprise the described sticking patch of formation to have second lateral dimension larger than correspondence first lateral dimension of described conductive trace, and wherein material described in ablation comprises described second lateral dimension reducing described sticking patch.
40. according to method according to claim 39, and wherein said second lateral dimension comprises at least one in height dimension and width dimensions.
41. methods according to claim 35, wherein guide described laser beam to comprise and apply laser pulse to be annealed by described patch.
42. 1 kinds of methods of repairing for circuit, it comprises:
Identify the defect in the conductive trace on printed circuit board (PCB);
The transparent donor substrate and the donor film comprising metal be formed on described second surface with the first and second relative surfaces are positioned proximate to target area, and wherein said second surface faces described printed circuit board (PCB); And
Guide the described first surface of pulse through described donor substrate of laser emission, and impinge upon on described donor film so that the two-dimensional array bringing out molten melt drop is ejected into described printed circuit board (PCB) to cover described target area from described donor film.
43. methods according to claim 42, wherein guide the described pulse of the described laser emission space density comprised by setting the described drop in described array to control the cladding thickness of described target area.
44. methods according to claim 42, wherein guide the described pulse of laser emission to comprise and are printed onto on described target area by described drop with hexagonal shaped pattern.
45. 1 kinds of equipment for deposition of material, it comprises:
The transparent donor substrate with the first and second relative surfaces and the donor film be formed on described second surface, described donor film has thickness δ and thermal diffusivity α and by thermal diffusion time τ=(δ 2/ 4 α) characterize;
Dowelling assembly, it is configured to described donor substrate to be positioned proximate to receptor substrate, and wherein said second surface faces described receptor substrate; And
Optical package, it is configured to guide the pulse of the laser emission in the pulse duration of the twice of the described thermal diffusion time with no more than described donor film through the described first surface of described donor substrate, and impinges upon on described donor film and be ejected into described receptor substrate from described donor film with the drop bringing out melted material.
46. equipment according to claim 45, wherein said donor film comprises metal.
47. equipment according to claim 46, wherein δ≤1 μm, and the described pulse duration of wherein said laser pulse be less than 5ns.
48. equipment according to claim 47, the described pulse duration of wherein said laser pulse is less than 2ns.
49. equipment according to claim 46, wherein said optical package is configured and with through selecting to promote that the first pulse energy described drop being adhered to described receptor substrate guides the first pulse strikes of described laser emission on described donor film, and then initial metal layer is formed in described receptor substrate, and then guide the second pulse of described laser emission with the second pulse energy being greater than described first pulse energy, make described drop accumulate described metal in described initial metal layer.
50. equipment according to claim 46, wherein said receptor substrate is printed circuit board (PCB), and wherein said optical package is configured to guide described pulse to bring out the deposition of described metal to repair the defect in the conductive trace on described printed circuit board (PCB).
51. equipment according to claim 45, the wherein said pulse duration is less than or equal to the described thermal diffusion time of described donor film.
52. equipment according to claim 45, when the described pulse strikes that wherein said donor substrate is positioned in described laser emission is on described donor film, described second surface is apart from described receptor substrate at least 0.1mm.
53. equipment according to claim 52, when the described pulse strikes that wherein said donor substrate is positioned in described laser emission is on described donor film, described second surface is apart from described receptor substrate at least 0.2mm.
54. equipment according to claim 45, wherein said optical package is configured to concentrated described laser emission to impinge upon on described donor film by the bundle spot size of ten times of the described thickness δ being at least described donor film.
55. equipment according to claim 45, wherein said optical package is configured to described laser emission is applied to described donor film to cause the droplet array spraying the target area covering described receptor substrate.
56. 1 kinds of equipment for deposition of material, it comprises:
The transparent donor substrate with the first and second relative surfaces and the donor film be formed on described second surface, described donor film comprises metal;
Dowelling assembly, it is configured to described donor substrate to be positioned proximate to receptor substrate, and wherein said second surface faces described receptor substrate, and wherein between described donor film and described receptor substrate, has the gap of at least 0.1mm; And
Optical package, it is configured to guide the pulse of laser emission through the described first surface of described donor substrate, and impinges upon on described donor film and be ejected into described receptor substrate through described gap from described donor film with the molten melt drop bringing out described metal.
57. equipment according to claim 56, wherein when the described pulse strikes of described laser emission is on described donor film, the described gap between described donor film and described receptor substrate is that at least 0.5mm is far away.
58. equipment according to claim 56, wherein said receptor substrate is printed circuit board (PCB), and wherein said optical package is configured to guide described pulse to bring out the deposition of described metal to repair the defect in the conductive trace on described printed circuit board (PCB).
59. 1 kinds of equipment repaired for circuit, it comprises:
The transparent donor substrate with the first and second relative surfaces and the donor film comprising metal be formed on described second surface;
Dowelling assembly, it is configured to the position of the defect be positioned proximate to by described donor substrate in the conductive trace on printed circuit board (PCB), and wherein said second surface faces described printed circuit board (PCB); And
Optical package, to carry out preliminary treatment to described position on its described position being configured to guide laser beam hits described defect on the printed circuit board, and guide thereafter the pulse of laser emission through the described first surface of described donor substrate, and impinge upon to bring out on described rejected region that molten melt drop to be ejected into from described donor film described printed circuit board (PCB) on described donor film, and then repair described defect.
60. equipment according to claim 59, wherein carry out preliminary treatment to described position and comprise and remove metal by carrying out laser ablation from described position.
61. equipment according to claim 60, wherein said defective packets containing the breach in described conductive trace, and is wherein carried out preliminary treatment to described position and is included in described breach adjacent place by the edge preform of described conductive trace.
62. equipment according to claim 61, wherein comprise conductive trace described in ablation and tilt towards described breach to cause the described edge of described conductive trace by described edge preform.
63. equipment according to claim 62, wherein conductive trace described in ablation is included in described conductive trace and forms stepped slope.
64. equipment according to claim 61, to be wherein included in described conductive trace ablation groove to strengthen the adhesion of described drop to described conductive trace by described edge preform.
65. equipment according to claim 61, wherein said optical package is configured to guide described laser beam to bring out and deposits described molten melt drop to extend above described preform edge and to extend beyond described preform edge on described conductive trace.
66. equipment according to claim 61, wherein said optical package is configured to guide described laser beam to bring out and deposits described molten melt drop to form the sticking patch conformed to the profile of described conductive trace in described rejected region on described conductive trace.
67. equipment according to claim 59, wherein said optical package be configured to scan on the substrate of described printed circuit board (PCB) described laser beam with at described near sites by described substrate roughening, and then promote described drop to adhere to described substrate.
68. equipment according to claim 67, wherein said laser beam is through operating with the pattern forming well in described substrate.
69. equipment according to claim 68, the described pattern of wherein said well is non-directional.
70. equipment according to claim 59, wherein said optical package is configured to guide described laser beam at described near sites from described conductive trace ablation oxide skin(coating), to promote described drop to adhere to described conductive trace.
71. equipment according to claim 59, wherein repair described defect and are included in described conductive trace and form sticking patch, and wherein said optical package is configured to guide described laser beam to carry out reprocessing to described sticking patch after the described defect of reparation.
72. 1 kinds of equipment repaired for circuit, it comprises:
The transparent donor substrate with the first and second relative surfaces and the donor film comprising metal be formed on described second surface;
Dowelling assembly, it is configured to described donor substrate to be positioned proximate to printed circuit board (PCB), and wherein said second surface faces described printed circuit board (PCB); And
Optical package, it is configured to the described first surface guiding the first pulse of laser emission through described donor substrate, and impinge upon on described donor film and be ejected on the position of the defect described printed circuit board (PCB) to bring out the first molten melt drop from described donor film, wherein said first pulse has through selecting to promote that described drop adheres to the first pulse energy of the substrate of described printed circuit board (PCB), and then form initial metal layer at described position over the substrate, and
Wherein said optical package is configured to guide the described first surface of the second pulse through described donor substrate of the described laser emission being in the second pulse energy being greater than described first pulse energy, and impinge upon on described donor film and be ejected into described initial metal layer from described donor film to bring out the second molten melt drop, and then repair described defect.
73. according to the equipment described in claim 72, and when described first and second pulse strikes that wherein said donor substrate is positioned in described laser emission are on described donor film, described second surface is apart from described printed circuit board (PCB) at least 0.1mm.
74. according to the equipment described in claim 72, and wherein said optical package is configured to after guiding described second pulse, guide drop described in laser beam refuse repairing the described metal annealing of described defect.
75. according to the equipment described in claim 72, and wherein said optical package is configured to guide laser beam to heat described second drop between described donor film and described printed circuit board (PCB) awing.
76. 1 kinds for repairing the equipment comprising the defect in the conductive trace of the first metal material on printed circuit board (PCB), described equipment comprises:
There is the transparent donor substrate on the first and second relative surfaces and be formed at the donor film of second metal material comprising on described second surface with the galvanic couple current potential higher than described first metal material;
Dowelling assembly, it is configured to the position described donor substrate being positioned proximate to described defect, and wherein said second surface faces described printed circuit board (PCB); And
Optical package, it is configured to the described first surface guiding the pulse of laser emission through described donor substrate, and impinge upon on described donor film and be ejected on the described position of the described defect described printed circuit board (PCB) from described donor film with the molten melt drop bringing out described second metal material, and then repair described defect and suppress galvanic corrosion simultaneously.
77. according to the equipment described in claim 76, and wherein said first metal material comprises copper, and described second metal material comprises copper alloy.
78. according to the equipment described in claim 76, wherein said optical package to be configured to bring out at the described position of described defect deposited sacrificial metal level on described second metal material, and wherein said expendable metal layer has the galvanic couple current potential lower than described second metal material.
79. 1 kinds of equipment repaired for circuit, it comprises:
The transparent donor substrate with the first and second relative surfaces and the donor film comprising metal be formed on described second surface;
Dowelling assembly, it is configured to the position of the defect be positioned proximate to by described donor substrate in the conductive trace on printed circuit board (PCB), and wherein said second surface faces described printed circuit board (PCB); And
Optical package, it is configured to the described first surface guiding the pulse of laser emission through described donor substrate, and impinge upon on described donor film to bring out on described rejected region that molten melt drop to be ejected into from described donor film described printed circuit board (PCB), and then the patch formed in order to repair described defect, and it is configured to, after the described patch of formation, guide the described position of laser beam to described defect to carry out reprocessing further.
80. according to the equipment described in claim 79, wherein said conductive trace has predefined three-dimensional 3D profile, and wherein to described position carry out reprocessing comprise use described laser beam conform to the described 3D profile of described conductive trace from described position ablator to make described sticking patch.
81. equipment according to Claim 8 described in 0, wherein material described in ablation comprises applying the first laser pulse through selection continuously with the first energy level of the superficial layer being oxidized described sticking patch, and there is the second laser pulse of second energy level larger than described first energy level, described second energy level through select with the superficial layer the second be alternately oxidized described in ablation, to remove described material from described sticking patch.
82. equipment according to Claim 8 described in 0, wherein said optical package is configured to the 3D rendering forming described sticking patch, to monitor the shape of described sticking patch before and after material described in ablation.
83. equipment according to Claim 8 described in 0, wherein said conductive trace has the first lateral dimension, and wherein said optical package is configured to guide the described pulse of described laser emission to form the described sticking patch with second lateral dimension larger than correspondence first lateral dimension of described conductive trace, and wherein material described in ablation comprises described second lateral dimension reducing described sticking patch.
84. equipment according to Claim 8 described in 3, wherein said second lateral dimension comprises at least one in height dimension and width dimensions.
85. according to the equipment described in claim 79, wherein carries out reprocessing to described position and comprise the described laser beam of applying to be annealed by described patch.
86. 1 kinds for repairing the equipment of the defect in the conductive trace on printed circuit board (PCB), described equipment comprises:
The transparent donor substrate with the first and second relative surfaces and the donor film comprising metal be formed on described second surface;
Dowelling assembly, it is configured to described donor substrate to be positioned proximate to target area, and wherein said second surface faces described printed circuit board (PCB); And
Optical package, it is configured to the described first surface guiding the pulse of laser emission through described donor substrate, and impinges upon on described donor film so that the two-dimensional array bringing out molten melt drop is ejected into described printed circuit board (PCB) from described donor film to cover described target area.
87. equipment according to Claim 8 described in 6, wherein said optical package is configured to the space density of the described drop changed in described array to control the cladding thickness of described target area.
88. equipment according to Claim 8 described in 6, wherein said optical package is configured and is printed onto on described target area by described drop with hexagonal shaped pattern.
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