CN104795506B - Quantum-dot LED structure and manufacturing method thereof - Google Patents
Quantum-dot LED structure and manufacturing method thereof Download PDFInfo
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- CN104795506B CN104795506B CN201510179349.0A CN201510179349A CN104795506B CN 104795506 B CN104795506 B CN 104795506B CN 201510179349 A CN201510179349 A CN 201510179349A CN 104795506 B CN104795506 B CN 104795506B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
Abstract
A quantum-dot LED structure comprises a cathode disposed on a substrate, a cathode, an electron injection layer, an electron transport layer an anode, a hole injection layer, a hole transport layer, and an quantum light-emitting layer; the cathode is disposed on the substrate; the electron injection layer and the electron transport layer are formed in order on the cathode; the anode is disposed on the substrate; the hole injection layer and the hole transport layer are formed in order on the anode; the quantum light-emitting layer is connected with the electron transport layer and the hole transport layer; the electron transport layer and the hole transport layer are distributed on the same side of the quantum light-emitting layer. The quantum-dot LED structure has the advantages that most light can directly come out of the quantum light-emitting layer with no barrier, the light loss of difference degrees caused by the layers of the traditional device structure is avoided, and light brightness is improved.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of light emitting diode with quantum dots structure and manufacture method.
Background technology
Light emitting diode with quantum dots is the new technique between liquid crystal and OLED, and which possesses low cost, low-power consumption etc.
Advantage and cause the concern of people, be just gradually widely used at present, with preferable market prospect.But used at present
QLED device architectures are stacked, and light is ejected by multiple structure, and each layer all can cause the infringement without degree to light, and
Make light extraction efficiency not high, the overall brightness of device is not enough.
The content of the invention
Based on this, it is necessary to for the problem that brightness is not enough, there is provided a kind of light emitting diode with quantum dots structure.
A kind of light emitting diode with quantum dots structure, including：Substrate；Negative electrode on the substrate is set, and is sequentially formed
Electron injecting layer, electron transfer layer on the negative electrode；Anode on the substrate is set, and is sequentially formed in the sun
The hole injection layer extremely gone up, hole transmission layer；And the quantum being connected with the electron transfer layer, the hole transmission layer is sent out
Photosphere, the electron transfer layer, the hole transmission layer are distributed in described quantum luminescent layer the same side.
Wherein in one embodiment, substrate is glass substrate or ceramic substrate.
Wherein in one embodiment, reflecting layer on substrate, is provided with.
Wherein in one embodiment, also including second electrode, the second electrode includes that the second anelectrode is negative with second
Electrode, second anelectrode are arranged on the anode away from the cathode side, and second negative electrode is arranged on the negative electrode
Away from the anode-side.
A kind of light emitting diode with quantum dots manufacture method is also provided, is comprised the following steps：S1, forms cathode chamber on substrate
Domain and anode region；S2, sequentially forms negative electrode, electron injecting layer and electron transfer layer on the cathode zone；In the sun
Anode, hole injection layer and hole transmission layer are sequentially formed on polar region domain；And S3, in the electron transfer layer, hole transport
Quantum luminescent layer is formed on layer, the electron transfer layer is located at described quantum luminescent layer the same side with the hole transmission layer.
Wherein in one embodiment, step S1 is specifically included：S11, on the substrate layering open up conductive trench；
S12, in the conductive trench inserts conductive material, makes conductive layer；The conductive layer is caused by S13 by through-hole interconnection
The substrate surface, forms the cathode zone and the anode region.
Wherein in one embodiment, before step S1, also including step：S0, forms reflecting layer on the substrate.
Wherein in one embodiment, step S2 is specially：S21, using mask plate by the negative electrode, electron injecting layer with
Electron transfer layer is deposited with the substrate cathode zone；S22, using mask plate by the anode, hole injection layer and hole
Transport layer is deposited with the substrate anode region.
Wherein in one embodiment, the method that the quantum luminescent layer is formed in step S3 is spin coating or inkjet printing.
Wherein in one embodiment, also including step：S4, the quantum luminescent layer both sides be deposited with the second anelectrode with
Second negative electrode, second anelectrode are located at the hole transmission layer away from the electron transfer layer side, and described second is negative
Electrode is located at the electron transfer layer away from the hole transmission layer side.
Above-mentioned light emitting diode with quantum dots structure, most of light directly can be launched from quantum luminescent layer milli without being blocked
Come, it is to avoid each layer causes different degrees of loss to light in conventional device structure, improve brightness.
Additionally, diode both sides add second electrode, the electric field that second electrode is formed is accelerated electron transfer layer and is passed with hole
Electronics and hole migration in defeated layer, promotes both to be combined in quantum luminescent layer, improves brightness.
Description of the drawings
Fig. 1 is light emitting diode with quantum dots structural representation；
Fig. 2 is light emitting diode with quantum dots structural representation in first embodiment；
Fig. 3 is light emitting diode with quantum dots structural representation in second embodiment；
Fig. 4 is light emitting diode with quantum dots manufacture method flow chart of steps；
Fig. 5 is step S1 concrete operation method flow chart in Fig. 4；
Fig. 6 is step S2 concrete operation method flow chart in Fig. 4；
Light emitting diode with quantum dots manufacture method flow chart of steps of the Fig. 7 for 3rd embodiment.
Specific embodiment
It is understandable to enable objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings to tool of the invention
Body embodiment is described in detail.Elaborate many details in order to fully understand the present invention in the following description.
But the present invention can be much different from alternate manner described here implementing, those skilled in the art can without prejudice to
Similar improvement is done in the case of intension of the present invention, therefore the present invention is not embodied as being limited by following public.
Light emitting diode with quantum dots structure proposed by the present invention includes：Substrate 10, negative electrode 20, electron injecting layer 21, electronics
Transport layer 22, quantum luminescent layer 40, anode 30, hole injection layer 31, hole transmission layer 32.
Refer to Fig. 1.Negative electrode 20 and anode 30 are provided with the substrate 10, and substrate 10 is glass substrate or ceramic substrate,
Substrate has certain thickness, and the layering in plate digs conductive trench.Negative electrode 20 is layered setting in a substrate with anode 30, by logical
The electrode of bottom surface is caused 10 surface of substrate by hole interconnection.
Electron injecting layer 21 and electron transfer layer 22 are followed successively by negative electrode 20, electron injecting layer 21 provides electronics, and electronics is passed
Defeated layer 22 transmits electronics, transmits to quantum luminescent layer and produces exciton with hole-recombination.
Hole injection layer 31 and hole transmission layer 32 are followed successively by anode 30, in the same manner, hole injection layer 31 provides hole,
32 transporting holes of hole transmission layer, are transmitted to quantum luminescent layer and are combined with electronics.
Quantum luminescent layer 40 is connected with electron transfer layer 22, hole transmission layer 32, wherein electron transfer layer 22 and hole
Transmitting layer 32 is respectively positioned on 40 the same side of quantum luminescent layer, make quantum luminescent layer 40 away from two transmission are laminated can be directly as going out
Bright finish.
Preferably, quantum luminescent layer 40 covers from above anode part and cathode portion, and at this, anode part includes anode
30th, hole injection layer 31 and hole transmission layer 32, cathode portion include negative electrode 20, electron injecting layer 21 and electron transfer layer 22.
So that the top surface of quantum luminescent layer 40, four sides are exiting surface.
Light emitting diode with quantum dots structure proposed by the present invention, most of light directly can have no to stop from quantum luminescent layer 40
Emit, it is to avoid in conventional device structure, each layer causes different degrees of loss to light, improves brightness.
Refer to Fig. 2.In one embodiment, reflecting layer 50 is accompanied by substrate.
Reflecting layer 50 is made up of metals such as silver, aluminum, lays on the surface of the substrate 10 in advance, then borehole carries out the moon on substrate
The making of anode and each layer.The light that quantum luminescent layer 40 is aimed downwardly is reflected by reflecting layer 50 upwards, improves going out for top surface
Light quantity.
Refer to Fig. 3.Further, quantum is luminous also includes second electrode 60, and second electrode 60 includes the second negative electrode
61 and second anelectrode 62, wherein the second negative electrode 61 is arranged on electron transfer layer 22 away from 32 side of hole transmission layer, second
Anelectrode 62 is arranged on hole transmission layer 32 away from 22 side of electron transfer layer, i.e., in figure the left side of electron transfer layer 22 and
The right side of hole transmission layer 32.60 external power supply of second electrode.
Due to the compound generation exciton that the principle of luminosity of quantum light emitting diode is electronics and hole, exciton is luminous in quantum
Layer excitation quantum material sends the light of respective wavelength.After addition second electrode 60, the second anelectrode 62 and the second negative electrode 61 it
Between form electric field, electric field action in electron transfer layer 22 with hole transmission layer 32 promotes the migration of electronics and hole, makes electronics
It is easily compound in 40 region of quantum luminescent layer with hole to produce exciton.
Based on above light emitting diode with quantum dots structure, the present invention also proposes the manufacture method of the structure.Refer to Fig. 4,
Concrete steps include：
S1, forms cathode zone and anode region on substrate.Substrate is used to carry device and connects in extraneous power supply, device
Part anode and the negative electrode corresponding anode region being arranged on substrate and cathode zone respectively, by embedded type electrical connection with it is extraneous
Conducting.
S2, sequentially forms negative electrode, electron injecting layer and electron transfer layer on cathode zone；The shape successively on anode region
Into anode, hole injection layer and hole transmission layer.Electron injecting layer provides electronics and hole with hole injection layer, is passed by electronics
Defeated layer and hole transmission layer, electronics, hole transport are combined to composite bed.
S3, forms quantum luminescent layer, wherein electron transfer layer and hole transmission layer on electron transfer layer, hole transmission layer
Positioned at quantum luminescent layer the same side.Quantum luminescent layer is connected with electron transfer layer, hole transmission layer, wherein electron transfer layer and
Hole transmission layer is respectively positioned on quantum luminescent layer the same side, make quantum luminescent layer away from two transmission are laminated can be directly as going out light
Face.Quantum luminescent layer covers from above anode part and cathode portion, so that the top surface of quantum luminescent layer and four sides are equal
For exiting surface
Light emitting diode with quantum dots manufacture method proposed by the present invention, in the light emitting diode with quantum dots structure of manufacture, greatly
Part light directly can be emitted from quantum luminescent layer milli without being blocked, it is to avoid in conventional device structure, each layer is caused not to light
With the loss of degree, brightness is improved, while in a substrate using the electrical connection of embedded type, it is ensured that electrical connection is stablized
Property.
Refer to Fig. 5.Specifically, substrate is glass substrate or ceramic substrate, with certain thickness.The concrete behaviour of step S1
Include as method：
S11, digs out conductive trench on substrate in advance.By way of punching, conductive trench is divided into two-layer, makees respectively
For cathode conductive layer and anode conductive layer.
S12, injects conductive material in conductive trench.Conductive layer, conductive layer connecting substrate are formed after injection conductive material
Outer power supply.
S13, is caused conductive layer to substrate surface by through-hole interconnection, forms cathode zone and anode region.In substrate
Hole wall can be made conductive material by upper borehole, also can connect the conductive material in conductive trench in extraction wire in hole, utilize
Two conductive layers are respectively led into substrate surface by the mode of through hole connection, form cathode zone and anode region, with interface unit
Negative electrode and anode.
Refer to Fig. 6.Step S2 is specially：
S21, is deposited with negative electrode, electron injecting layer and electron transfer layer on substrate cathode zone using mask plate.Using
Mask plate covers substrate other regions, exposes cathode zone, and adopts evaporation coating method, by cathode material, electron injecting layer material,
Electron transport layer materials are deposited with successively, form stacked negative electrode, electron injecting layer and electron transfer layer.
S22, is deposited with anode, hole injection layer and hole transmission layer on substrate anode region also with mask plate.
Cover also with mask plate
Hereafter, insulant is coated on the negative electrode, anode, electron injecting layer, the exposed face of hole injection layer for being formed, prevent
Only there is electrical connection with follow-up quantum luminescent layer.
On established electron transfer layer, hole transmission layer, quantum is manufactured using spin coating or inkjet printing mode and is lighted
Layer, quantum luminescent layer is from upper covering electron transfer layer and hole transmission layer, and surrounds negative electrode, anode, electron injecting layer, hole note
Enter the layer structures such as layer.
Referring to Fig. 7.In one embodiment, light emitting diode with quantum dots manufacture method also includes：
Step S0, forms reflecting layer on substrate.
Specifically, cover in advance one layer of reflecting layer on substrate, reflector material can the metal such as Al, Ag, steamed by substrate in advance
One layer of reflecting material of plating is made.The light that quantum luminescent layer is aimed downwardly is reflected by reflecting layer upwards, improves device going out upwards
Light quantity.
Step S4, is deposited with the second anelectrode and the second negative electrode in quantum luminescent layer both sides.
Specifically, the second anelectrode is located at hole transmission layer away from electron transfer layer side, and the second negative electrode is located at electronics
Transport layer forms electric field away from hole transmission layer side, the second anelectrode and the second negative electrode, due to quantum light emitting diode
Principle of luminosity is electronics and the compound generation exciton in hole, and exciton sends respective wavelength in quantum luminescent layer excitation quantum material
Light.After addition second electrode, electric field between the second anelectrode and the second negative electrode, is formed, electric field action is in electron transfer layer and sky
In the transport layer of cave, promote the migration of electronics and hole, electronics is easily combined in quantum light emitting layer area with hole and produce
Exciton.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more concrete and detailed, but and
Therefore the restriction to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, some deformations and improvement can also be made, these belong to the guarantor of the present invention
Shield scope.Therefore, the protection domain of patent of the present invention should be defined by claims.
Claims (9)
1. a kind of light emitting diode with quantum dots structure, it is characterised in that include：
Substrate；
Negative electrode on the substrate is set, and be sequentially formed on the negative electrode electron injecting layer, electron transfer layer；
Anode on the substrate, and the hole injection layer being sequentially formed on the anode, hole transmission layer are set；And
The quantum luminescent layer being connected with the electron transfer layer, the hole transmission layer, the electron transfer layer, the hole
Transport layer is distributed in described quantum luminescent layer the same side；
The layering in the substrate digs conductive trench, and the negative electrode is layered setting in the substrate with anode, by through hole
The electrode of bottom surface is caused the substrate surface by interconnection.
2. light emitting diode with quantum dots structure according to claim 1, it is characterised in that the substrate be glass substrate or
Ceramic substrate.
3. light emitting diode with quantum dots structure according to claim 2, it is characterised in that reflection is provided with the substrate
Layer.
4. light emitting diode with quantum dots structure according to claim 3, it is characterised in that also including second electrode, described
Second electrode includes the second anelectrode and the second negative electrode, and second anelectrode is arranged on the anode away from the negative electrode
Side, second negative electrode are arranged on the negative electrode away from the anode-side.
5. a kind of light emitting diode with quantum dots manufacture method, it is characterised in that comprise the following steps：
S1, forms cathode zone and anode region on substrate；
S2, sequentially forms negative electrode, electron injecting layer and electron transfer layer on the cathode zone；On the anode region according to
Secondary formation anode, hole injection layer and hole transmission layer；And
S3, forms quantum luminescent layer on the electron transfer layer, hole transmission layer, and the electron transfer layer is passed with the hole
Defeated layer is located at described quantum luminescent layer the same side；
Step S1 is specifically included：
S11, on the substrate layering open up conductive trench；
S12, in the conductive trench inserts conductive material, makes conductive layer；
The conductive layer is caused the substrate surface by through-hole interconnection by S13, forms the cathode zone and the anode region
Domain.
6. light emitting diode with quantum dots manufacture method according to claim 5, it is characterised in that before step S1, also
Including step：
S0, forms reflecting layer on the substrate.
7. light emitting diode with quantum dots manufacture method according to claim 6, it is characterised in that step S2 is concrete
For：
S21, is deposited with the negative electrode, electron injecting layer and electron transfer layer on the substrate cathode zone using mask plate；
S22, is deposited with the anode, hole injection layer and hole transmission layer on the substrate anode region using mask plate.
8. light emitting diode with quantum dots manufacture method according to claim 7, it is characterised in that formed in step S3
The method of the quantum luminescent layer is spin coating or inkjet printing.
9. light emitting diode with quantum dots manufacture method according to claim 5, it is characterised in that also including step：
S4, is deposited with the second anelectrode and the second negative electrode in the quantum luminescent layer both sides, and second anelectrode is located at described
Away from the electron transfer layer side, second negative electrode is located at the electron transfer layer away from the hole to hole transmission layer
Transport layer side.
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| CN104795506B true CN104795506B (en) | 2017-04-26 |
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| CN109004098A (en) * | 2018-08-03 | 2018-12-14 | 上海钥熠电子科技有限公司 | A kind of novel OLED device and its display, lighting device |
| CN113831920B (en) * | 2021-09-27 | 2023-08-18 | 合肥福纳科技有限公司 | Quantum dot solution purification method, quantum dot purification solution and device |
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| CN104247054A (en) * | 2011-11-04 | 2014-12-24 | 普林斯顿大学 | Light emitting diodes, fast photo-electron source and photodetectors with scaled nanostructures and nanoscale metallic photonic cavity and antenna, and method of making same |
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