CN104794282A - Electromagnetic compatibility reliability evaluation method for avionic device power supply module - Google Patents
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- 238000011156 evaluation Methods 0.000 title abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 53
- 230000007246 mechanism Effects 0.000 claims abstract description 28
- 238000004458 analytical method Methods 0.000 claims abstract description 25
- 238000004088 simulation Methods 0.000 claims abstract description 16
- 238000009826 distribution Methods 0.000 claims description 62
- 230000005684 electric field Effects 0.000 claims description 25
- 230000005855 radiation Effects 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 20
- 230000006378 damage Effects 0.000 claims description 17
- 230000015556 catabolic process Effects 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 12
- 238000010586 diagram Methods 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 11
- 238000012614 Monte-Carlo sampling Methods 0.000 claims description 5
- 230000005672 electromagnetic field Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 19
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000011160 research Methods 0.000 abstract description 5
- 230000009471 action Effects 0.000 abstract description 2
- 230000001186 cumulative effect Effects 0.000 abstract 1
- 230000005288 electromagnetic effect Effects 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 21
- 230000008569 process Effects 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 238000002955 isolation Methods 0.000 description 7
- 230000005352 galvanomagnetic phenomena Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000005284 excitation Effects 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 230000000750 progressive effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 230000010534 mechanism of action Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000005315 distribution function Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 201000004569 Blindness Diseases 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 206010044565 Tremor Diseases 0.000 description 1
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000003412 degenerative effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000006353 environmental stress Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000012854 evaluation process Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000003902 lesion Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000007620 mathematical function Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021471 metal-silicon alloy Inorganic materials 0.000 description 1
- 150000001455 metallic ions Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
Provided is an electromagnetic compatibility reliability (EMR) evaluation method for an avionic device power supply module. The method comprises the five steps of information collection, simulated analysis, hard failure EMR evaluation, cumulative failure EMR evaluation and comprehensive EMR evaluation. According to the electromagnetic reliability evaluation method for the avionic device power supply module, the electromagnetic effect action mechanism is researched from the angle of the failure mechanism, the simulation technology is utilized, a stress and strength interference (SSI) model and a method of probability physics of failure (PPoF) are combined, the detailed research is performed for the relative reliability of electromagnetic compatibility of the avionic device power supply module, the method for evaluating the electromagnetic reliability of the avionic device power supply module on the basis of the simulated analysis is put forward, therefore, a designer can have intuitive understanding on the EMR level of a product in the design stage, and the reference basis can be supplied for the design improvement of the product.
Description
Technical field
The invention provides a set of based on what emulate, the method for the power module electromagnetic compatibility reliability (Electromagnetic Reliability, EMR) of assessment avionic unit, belongs to product reliability field.
Background technology
Along with the arrival of information age, electrified to improve constantly with automatization level, electronic product to microminiaturized, integrated, high-power, high frequency, at a high speed, highly sensitive future development, the electromagnetic environment around us becomes increasingly complex.These electronic equipments are all outwardly launching various useful or useless electromagnetic wave, produce interference to the normal work of other electronic equipments.As current main, electronic countermeasure platform the most flexibly, kind and the quantity of avionic unit grow with each passing day, the electromagnetic spectrum taken is more and more wider, emissive power is also increasing, sensitivity requirement is more and more higher, in addition airborne platform limited space, defines complexity and severe external electromagnetic environment; On the other hand, the function of avionic unit is increasingly abundant, and inner microelectronic component and circuit increase, and trace width is more and more narrow, and add signal frequency and uprush, edge is also more and more precipitous, just constitutes severe internal electrical magnetic environment again.The electromagnetic environment of disturbing outside this domestic trouble makes the electromagnetic compatibility problem of avionic unit more and more outstanding.
At present, electromagnetic compatibility problem receives the attention of world community, and the U.S., Germany, Japan and other countries all reach higher level in electromagnetic compatibility investigation and application field.In theory, propose various accurate and approximation algorithm, and be embedded in business software, utilize computing machine to carry out supercomputing emulation; In engineering, not only propose from all angles such as circuit, structure, technique and installations the measure eliminating and weaken electromagnetic interference (EMI), also formulated Specification.
But traditional product design is all the rich experiences according to slip-stick artist, and utilize the instruments such as oscillograph to carry out functional verification, then can only deliver to professional electromagnetic compatibility test mechanism for EMC test, cost cost is high, R&D cycle is long, and is not suitable for the research and development of new product.As a rule, emc testing report can only provide the conclusion whether product passes through test, cannot see clearly problem producing cause, the experience of technician can only be relied on to solve the electromagnetic compatibility problem of appearance, there is certain blindness, higher to personnel's technical requirement, and waste time and energy.Therefore, product design personnel start to pay close attention to modeling and simulating, just can predict potential electromagnetic compatibility mal function in the design phase, time update product design.
Generally speaking, though the Electro Magnetic Compatibility of avionic unit progressively comes into one's own, Electro Magnetic Compatibility assessment common at present, finds fault that position occurs often by methods such as emulation or tests, cannot clearly provide reliability index value.
Summary of the invention
The shortcoming as the electromagnetic Compatibility Design of electronic installation and the EMR desired value of optimization important references clearly cannot be provided for prior art, the object of the present invention is to provide the method for the electromagnetic compatibility reliability of the power module of a set of assessment avionic unit, particularly, based on Emulation of EMC technology, and SSI (Stress Strength Interference stress-strength interference) theory and PPoF (Probability Physics of Failure probability faulty physical) method are dissolved in galvanomagnetic effect analysis, and then obtain the EMR index of avionic unit electromagnetism accumulated damage, establish the quantitative relationship between electromagnetic stress and reliability index, the EMR level of assurance product directly perceived, for the electromagnetic Compatibility Design of product and optimization provide reference frame.
The appraisal procedure of the electromagnetic compatibility reliability of avionic unit power module of the present invention, is characterized in that comprising the following steps:
Step one: information, comprising:
A. power module hardware and operating condition information is collected;
B. set up the failure message matrix that power module is relevant to electromagnetic compatibility, failure message matrix comprises the physics model of failure of failure mechanism and correspondence;
C. the failure mechanism selecting time before failure the shortest from failure message matrix, as main failure mechanism, obtains the master of its correspondence
Physics model of failure;
D. the characteristic parameter relevant to electric field radiation and main failure mechanism and distribution is determined;
Step 2: the simulation analysis of power module electromagnetic compatibility, comprises following sub-step:
A. according to hardware and the operating condition information of step one collection, the realistic model of power module is set up;
B. select the target cabling will analyzed in described realistic model, analysis is carried out to it and arranges;
C. the emulation that power module carries out signal integrity, Power Integrity, magnetic distribution and far-field radiation is solved;
Step 3: hard fault electromagnetic compatibility reliability assessment, comprises following sub-step:
A. according to its distribution, Monte Carlo sampling is carried out to the described characteristic parameter determined in step one;
B. the realistic model will set up in the characteristic parameter data from the sample survey input step two obtained, through repeatedly calculating the multiple maximum field intensity levels obtained on multiple frequency, and simulates its distribution;
C. using the maximum field intensity distributions on multiple frequency as the stress distribution in SSI model, using the intensity of the limit of electric field strength of national regulations as SSI model, carry out Reliability Solution, and draw out frequency-reliability curves figure;
D. the hard fault electromagnetic compatibility reliability value under power module frequency of operation condition is obtained according to frequency-reliability curves figure;
Step 4: accumulated damage electromagnetic compatibility reliability assessment, comprises following sub-step:
A. select the characteristic parameter sample identical with hard fault electromagnetic compatibility reliability assessment, multiple frequency carries out modeling and simulating respectively and solves the electromagnetism physical parameter obtained on target cabling;
B. the multiple electromagnetism physical parameters obtained are substituted in aforementioned major error physical model, obtain power module at this electric stress
Multiple out-of-service times under condition, fitting of distribution is carried out to it, obtain Reliability Function;
Step 5: the compatible reliability assessment of comprehensive electromagnetic, using the product of the hard fault electromagnetic compatibility reliability value under this power module frequency of operation condition and accumulated damage type electromagnetic compatibility Reliability Function as the comprehensive electromagnetic compatibility fiduciary level of this power module.
Preferably, wherein collected in step one hardware and operating condition information comprise function, the working stress condition of power module circuitry plate, composition components and parts inventory on circuit board, the structure of circuit board and components and parts, material, technological parameter, pinout information, solder joint and via hole information.
Preferably, the described failure mechanism wherein in step one comprises electromigration, second breakdown, hot carrier's effect, gate oxide breakdown and overheatedly to burn.
Preferably, the main failure mechanism wherein described in step one is electromigration.
Preferably, the characteristic parameter wherein determined in step one is the relative dielectric constant of power module circuitry plate and components and parts, its Normal Distribution.
Preferably, the described analysis setting wherein in step 2 comprises: add driving source port to selected cabling, arrange background material and the boundary condition of realistic model, arrange mesh parameter, solve target, the frequency sweep response of frequency of operation and model, arranges monitor.
Preferably, wherein described in step 2, emulation solves and comprises:
1) signal integrity is emulated, analyze the impact that the signal cross-talk, the interference problem that are caused by high-frequency circuit electromagnetic stress produce circuit board signal integrality, obtain signal eye diagram;
2) Power Integrity is emulated, analyze and obtain source impedance and power electric pressure drop;
3) analyze the electromagnetic field that trace signal produces, the field radiation of artificial circuit plate, obtains the Electric Field Distribution of circuit board, Distribution of Magnetic Field, surface current and far-field radiation.
Preferably, the electromagnetism physical parameter wherein described in step 4 is the surface current on target cabling.
In sum, technical thought of the present invention is: first from the angle of faulty physical, the mechanism of action of research galvanomagnetic effect, set up power module failure information matrix under an electromagnetic environment, then Emulation of EMC specific works is given, comprise modeling, condition setting, solve and the content such as aftertreatment, design optimization, its simulation result will be used to electromagnetic compatibility reliability assessment.Then the failure message matrix obtained before combining, simulation result and Monte Carlo sampling, propose the method for two kinds of assessment EMR.A kind of for having probabilistic hard fault, utilize SSI theoretical, obtain the RELIABILITY INDEX of product; Another kind method, then for the damage fault with degenerative, utilizes PPoF method, sets up probability physics model of failure, obtains the reliability index of product.Finally, comprehensive two kinds of reliability indexs propose comprehensive EMR evaluation index.
The present invention has the following advantages:
1. the present invention is by combining faulty physical with electromagnetic compatibility problem, goes to study the basic reason of electromagnetic compatibility mal function generation and the effect of electromagnetic stress, contribute to the deep mechanism of action understanding electromagnetic stress from the microcosmic point such as physics, chemistry.Furthermore, except having had except qualitative assurance to electromagnetism fault, give the physics model of failure describing Related Mechanism herein, and mining model comprises electromagnetic stress in the meaning of interior each electromagnetism physical parameter and dispersiveness, take into full account the uncertainty impact that the characteristic parameters such as structure, material, technique cause fault, this gives the quantitative description of electromagnetism fault, finally set up the failure message matrix that complete electromagnetism is relevant.
2. there is shown herein the simulating analysis that the galvanomagnetic effect of complete set is relevant, setting from modeling to boundary condition, then to solving definition and the algorithms selection in territory, finally emulate the overall process solved, obtain various Electro Magnetic Compatibility information, thus guarantee that simulation result is true and reliable.
3. Electro Magnetic Compatibility assessment common at present, finds fault that position occurs often by methods such as emulation or tests, clearly cannot provide reliability index value, and this index can provide very important reference for the electromagnetic Compatibility Design of product and optimization.Therefore, propose the method for a set of calculating electromagnetic compatibility reliability index herein, this method combines Emulation of EMC technology, and SSI theory and PPoF method are dissolved in galvanomagnetic effect analysis, establish the direct relation between electromagnetic stress and reliability index, for the horizontal supplying method of the EMR intuitively holding product, the design for product improves and provides reference frame.
Accompanying drawing explanation
The application comprises the following drawings, wherein:
Fig. 1 is embodiment of the present invention power module principle of work schematic diagram.
Fig. 2 is the inventive method FB(flow block).
Fig. 3 is embodiment of the present invention power module Emulation of EMC process flow diagram.
Fig. 4 is embodiment of the present invention power module plate figure.
Fig. 5 is embodiment of the present invention power module realistic model figure.
Fig. 6 is embodiment of the present invention power module signal eye diagram.
Fig. 7 is embodiment of the present invention power module impedance plot.
Fig. 8 is the pressure drop figure of embodiment of the present invention power module cabling.
Fig. 9 is the distribution map of the electric field of embodiment of the present invention power module circuitry plate.
Figure 10 is the Surface current distribution figure of embodiment of the present invention power module circuitry plate.
Figure 11 is embodiment of the present invention power module far-field radiation pattern.
Figure 12 is the distribution map of the electric field of embodiment of the present invention power module.
Figure 13 is that embodiment of the present invention power module emulates the Electric Field Distribution SSI illustraton of model obtained.
Figure 14 is the curve of the frequency-fiduciary level of embodiment of the present invention power module matching.
Figure 15 is embodiment of the present invention power module electric current-relative dielectric constant curve.
Figure 16 is that embodiment of the present invention power module Matlab carries out Weibull distribution and checks the Weibull probability figure obtained.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.
The embodiment of the present invention selects DC-isolation formula switch power module as electromagnetic compatibility reliability assessment object, and this power module mainly comprises high-efficiency separated Switching Power Supply integrated circuit, three end adjustable shunt reference sources, single-phase rectification bridge and precision photoelectric coupler.Fig. 1 shows the principle of work schematic diagram of DC-isolation formula Switching Power Supply, the process of its main circuit functional realiey is roughly, high pressure industrial-frequency alternating current becomes high voltage direct current after rectifying and wave-filtering, high voltagehigh frequency alternating current is become again through signal madulation, then low-voltage high-frequency alternating current is become through isolated transformer, last rectifying and wave-filtering, exports the low-voltage DC with high stability high-quality.
Electromagnetic compatibility reliability estimation method for power module carries out according to flow process as shown in Figure 2, mainly comprises the physics model of failure of main failure mechanism and the correspondence thereof determining power module, Emulation of EMC, hard fault EMR assesses, progressive damage fault EMR assesses and comprehensive EMR assesses.Below in conjunction with this DC-isolation formula switch power module, electromagnetic compatibility reliability estimation method of the present invention is described in detail.
step one, information
Information is the first step of this method, and the information collected is the basis of subsequent simulation work and evaluation work, and its integrality and accuracy directly determine the accuracy of last emulation and assessment result, therefore very crucial.
The information spinner collected will comprise three parts: collect hardware and the operating condition information of power module, set up failure message matrix determination major error information and determine characteristic parameter and distribution.
First, collect hardware and the operating condition information of power module, the approach of collection mainly contains consults reference books, object test and virtual emulation three kinds.The content of collecting is needed mainly to comprise the function of circuit board, working stress condition, composition components and parts inventory, the structure of plate and components and parts, material, technological parameter, pinout information and solder joint, via hole information etc.Circuit board in the power module of the present embodiment is about 152mm, wide 102mm, and thickness of slab is 18.2mil, two metal layers one deck dielectric layer, additional upper and lower two-layer solder mask.On plate, the function of several Important Components is as follows:
TNY223, high-efficiency separated Switching Power Supply integrated circuit, is TinySwitch-III series integrated circuit (IC) products, it is integrated with a high-voltage power switch mosfet and a power-supply controller of electric.This controller comprises an oscillator, voltage stabilizer, enable circuits, overheating protection, current limitation selection circuit, current limit circuit, limited current state machine, the power MOSFET tube of lead-edge-blanking circuit and a 700V.Different from PDM keyer, it uses simple switch control rule mode to carry out stable output voltage.
TL431, three end adjustable shunt reference sources, its output voltage is arranged by adjusting resistance ratio, can be stabilized in reference voltage terminal to the arbitrary value within the scope of 36V.
2kbp10m, single-phase rectification bridge, effect is rectification, and alternating current is become direct current, feature be facilitate small and exquisite.Its essence is connected into bridge rectifier circuit four silicon diodes exactly, is then packaged together, and gets up with plastics package, and draw four pin, wherein two pin connect AC power, represents with ~ ~ symbol, and two other pin is then that direct current exports, with+-represent.
Pc817, precision photoelectric coupler, is usually requiring to make coupled apparatus in more accurate functional circuit, has the effect of isolation the superior and the subordinate circuit, makes front end and load completely isolated, increases line security, reduces circuit and disturbs.Common photoelectrical coupler can only transmission of digital signals, precision photoelectric coupler then can transmit continually varying analog voltage or current signal, along with the power change of input signal can produce corresponding light signal, thus making the conducting degree of photistor also different, the voltage of output or electric current are also thereupon different.
Secondly, faulty physical analysis, comprises and determines the failure mechanism of power module and the physics model of failure of correspondence thereof, set up failure message matrix, determines main failure mechanism and corresponding major error physical model.
Physics model of failure is for failure mechanism, on the basis of basic physics, chemistry, electricity formula or empirical regression formula, and the mathematical function model of the relation such as inefficacy time of origin and material, structure, stress of reacting quantitatively set up.First this method will investigate the failure mechanism relevant to electromagnetic compatibility, and the basic reason occurred electromagnetic compatibility mal function in the microcosmic point such as physics, chemistry and the effect of electromagnetic stress are studied, and determine that power module failure mechanism comprises following five kinds:
1) electromigration
At device after sub-micron, deep-submicron development, metallized width constantly reduces, strong-electromagnetic field is coupled in circuit, produces large current density, and the forceful electric power potential difference that big current causes can produce very large mechanical stress gradient on metal interconnecting wires, metallic ion is caused to move, in cabling, form hole or crackle, finally cause metallization lines to open a way or short circuit, the leakage current of device is increased, visible, the electromigration that electromagnetic field causes can affect the reliability of circuit.
2) second breakdown
Second breakdown is the modal ESD of microwave semiconductor device (Electro-Static discharge static discharge) damage phenomenon.Similarly, strong-electromagnetic field is coupled in circuit, produces large current density, causes local temperature to raise, and this makes again current density increase further, and temperature rise continues to improve.When the local temperature of device exceedes the melt temperature of semiconductor material, PN junction can be caused to lose efficacy.If temperature is enough high when can melt the metal of contiguous contact hole, molten metal will migration between knot under the effect of electric field, causes the resistive short between tying.
3) hot carrier's effect
Extraneous strong-electromagnetic field is coupled in circuit, form big current, when near power device channel laterally electric field or drain electrode, electric field is very strong, the electronics produced by source electrode is after by strong electric field region, namely thermoelectron (i.e. hot carrier) is become, cause impact ionization, produce the electron hole pair of greater number, the hot carrier produced like this is drain avalanche hot carrier.Part drain avalanche hot carrier can overcome silicon-silicon dioxide interface potential barrier, and injector grid silicon dioxide film, make it produce trap and interface energy level, and threshold voltage is changed.This effect can make Oxide trapped charge increase or fluctuation shakiness, thus causes the electrical quantity performance degradation of device, and device is decayed.The hole simultaneously produced with drain avalanche hot carrier, enters substrate under strong grid field action, forms substrate current, causes latch-up.And when maximum, cause the performance degradation of device the most remarkable by drain avalanche hot carrier.
4) gate oxide breakdown
When voltage has exceeded the voltage breakdown of gate oxide, ESD can cause MOS device gate oxide to break (to bipolar device, puncture and mainly occur in device body).Big current, by breakdown point, causes spot heating, and usually produces metal silicon alloy in grid rupture location, forms the short-circuit resistance running through grid.Short circuit can make grid arrive drain short circuit, and grid also can be made to source short or grid to substrate short circuit, and this depends on oxide layer structure and defect.In flawless oxide layer, ESD damage most possibly occurs in source electrode or drain electrode, and this depends on the bias voltage of transient state polarity and device.The ESD of PN junction shows as the performance degradation of PN junction under damaging and usually occurring in reverse-biased condition.
5) overheatedly to burn
Usually containing many bonding jumper structures in modern microwave semiconductor devices, for the connection of device inside or the connection of device and pin.The electric current produced in electromagnetic pulse process and energy, can impel the temperature of microwave semiconductor device to raise rapidly, when temperature reaches enough high, metallic film and bonding wire scorification can be made even to vaporize, thus cause open circuit.And due to the restriction of real technological level, be difficult to realize uniform metal layer, be therefore easy to cause local current to assemble and local overheating.
By consulting handbook literature, determining the failure mechanism that power module is relevant to electromagnetic compatibility and corresponding physics model of failure, the information such as failure mechanism, physics model of failure is gathered integration, set up electromagnetic compatibility dependent failure information matrix, as shown in table 1.
Adopting Cacle PWA software (being researched and developed by the CALCE center of Univ Maryland-Coll Park USA, main research electronic devices and components faulty physical) to calculate failure mechanism respectively is in the method the time before electromigration, second breakdown, hot carrier's effect, gate oxide breakdown, the overheated power module failure burnt.Through contrast, under electromigration failures mechanism, time before failure is the shortest, and what illustrate that electromigration breaks down to power module has the greatest impact, and determines the main failure mechanism of electromigration power module for this reason thus.
Table 1 physics model of failure table
In physics model of failure, there is the parameters such as a lot of physical dimension, material properties and electric stress, by the impact of the factors such as crudy, technology controlling and process and environmental stress, these parameters have certain randomness, and obey certain distribution, as shown in table 2.The dispersed uncertainty that causes on fault of characteristic parameter affects, so consider the impact of these characteristic parameters in this appraisal procedure, provides the parameter distribution of each characteristic parameter.Electric field radiation is relevant to the relative dielectric constant of material, and the main failure mechanism determined in the aforesaid step of this method is electromigration, electromigratory generation is relevant to the dielectric properties of circuit board material, therefore the relative dielectric constant of the characteristic parameter paid close attention in subsequent simulation analysis power module circuitry plate is for this reason determined, its Normal Distribution.
Table 2 unknown distribution of model parameters table
step 2, simulation analysis
The flow process of electromagnetic compatibility Reliability Simulation Analysis is carried out as shown in Figure 3 for avionic unit DC-isolation formula switch power module.
According to the information of collecting, set up the realistic model of circuit board, simulation analysis is carried out to the Electric Field Distribution of signal integrity, Power Integrity, circuit board, Distribution of Magnetic Field, surface current and far-field radiation.The reason selecting these aspects to carry out simulation analysis has 3 points:
1) essence of design circuit is that circuit signal by flowing in cabling realizes certain specific function, and signal quality is the matter of utmost importance that we are concerned about.Therefore, to emulate signal integrity (SI), analyze the impact that the problem such as signal cross-talk, interference that caused by high-frequency circuit electromagnetic stress produces circuit board SI, finally obtain the results such as signal eye diagram.
2) stable supply voltage is the pacing items that circuit board normally works, and the fluctuation of power supply can bring fatal impact to whole circuit board.Power Integrity can directly affect signal integrity and electromagnetic interference (EMI) and radiation, and in a lot of situation, the main cause causing signal generation to distort all comes from power-supply system.Therefore, to emulate Power Integrity (PI), analyze source impedance and power electric pressure drop (IR-drop).
3) electromagnetic interference (EMI) of circuit board and radiation are the focuses paid close attention to herein, therefore, analyze the electromagnetic field that trace signal produces, the field radiation of artificial circuit plate, finally obtains the results such as the Electric Field Distribution of circuit board, Distribution of Magnetic Field, surface current and far-field radiation.
When implementing this method for the power module in the present embodiment, new projects are created in Altium Designer software (from Altium company), circuit diagram according to product completes the drafting of its schematic diagram, add encapsulation to each element, then preserve and generating network table; Utilize the net list generated, place the components and parts of each composition, carry out wiring and layer setting, completing circuit plate figure.For in the present embodiment power module set up Switching Power Supply mould plate figure as shown in Figure 4.C1, T2 in Fig. 4 form electromagnetic interface filter, D1 and C5, C6 carry out rectifying and wave-filtering to input ac voltage, DV1 and D2 is for eliminating the peak voltage caused because of transformer leakage inductance, IC1 is the on-off controller chip of a built-in MOSFET, model is TNY223, it accepts output feedack and controls the work of whole circuit, is the core devices of this switching power circuit.D4, C9, C10 and D5, C12, C13 are secondary commutation filtering circuits, and L1, C11, C15 and L2, C14, C16 form low-pass filter respectively to reduce output ripple voltage.R7 and R9, R10 export sample resistance, determined the REF terminal voltage of TL431, thus carry out the shunting of control TL431 from negative electrode to anode by both dividing potential drops, and the luminous component of this electric current Direct driver linear optical coupling Pc817.Therefore, when output voltage has change megatrend, REF terminal voltage increases thereupon, and cause the electric current flowing through TL431 to increase, so optocoupler luminescence is strengthened, the feedback voltage that photosensitive end obtains is just corresponding increase also.TNY223 receive this become large feedback voltage after by changing the switching time of MOSFET, output voltage is fallen after rise.
This plate figure is imported CST simulation software (from German CST joint-stock company), set up Emulation of EMC model as shown in Figure 5.The target cabling that selection will be analyzed, selects to add driving source port to it; Background material and the boundary condition of realistic model are set; Mesh parameter is set, solves target, the frequency sweep response of frequency of operation and model; For can demonstrate the result of needs when aftertreatment, also need to arrange corresponding monitor.For power module in the present embodiment, background material is set to normal, boundary condition is open (add space), solving frequency range is 0 ~ 4GHz, according to consulting this area power module relevant design handbook, select cabling that is the most responsive to electromagnetic radiation or that have the greatest impact to electromagnetic radiation from environment as analysis cabling, to the DC-isolation formula switch power module of the present embodiment, determine that analyzing cabling is NETC5_1 and NETC3_2, arranges 2 excitation port respectively at every bar cabling two ends: port1, port2 and port3, port4.Hereafter only carry out analysis and evaluation for NETC5_1.For the total evaluation of this power module, need to carry out analysis and evaluation respectively to these two cablings, because the two method is identical, therefore no longer the analysis and evaluation process of NETC3_2 is described in detail herein.
Complete after analysis arranges, start power module to be carried out to the emulation such as signal integrity, Power Integrity, magnetic distribution and far-field radiation to solve, aftertreatment obtains the relevant information such as scattering parameter, signal eye diagram, Electric Field Distribution, Distribution of Magnetic Field, surface current, far-field radiation situation of power module.For the cabling NETC5_1 of power module circuitry plate in the present embodiment, following information can be obtained after emulation solves:
1) as shown in Figure 6, eye pattern " eyes " opens comparatively large, and stitching is comparatively clear, because the size of opening reflects the power of intersymbol interference and interference noise, therefore the crosstalk that is subject to of this cabling visible and interference less.
2) in power distribution system (PDN), reduce source impedance usually through decoupling capacitor in parallel, make noise or signal can find Low ESR return flow path, avoid the radiation-emitting caused because impedance loop is too high.By knowing by Fig. 7, at 0 ~ 2GHz frequency band, resistance value entirety is lower, and substantially much smaller than 7 Ω, the impedance only at 0.67GHz place is slightly high, is approximately 6.2 Ω.
3) as can be seen from Figure 8, the loss of the internal resistance of source is very little, can ignore, and the pressure drop of cabling is also negligible.
4) as shown in figs. 9-10, by distribution map of the electric field, the Distribution of Magnetic Field figure and Surface current distribution figure of circuit board, the maximum field value 78.49V/m (Fig. 9 a)) of circuit board under 2GHz frequency can be obtained, maximized surface current value 2.3A (Figure 10 a)), the maximum field value 33.99V/m (Fig. 9 b) of circuit board under 4GHz frequency), maximized surface current value 3.6A (Figure 10 b)), for EMR assessment below provides input.The impact of cabling on other trace signal of interpolation pumping signal can also be observed out, instruct the topological design of circuit board.Arrow in figure is excitation port, and blueness is the components and parts on circuit, and remaining is fragmentarily electric field, magnetic field or surface current field distribution situation.Visible, the cabling around excitation cabling is easily affected, but is not clearly.
7) as shown in figure 11, can analyze the radiation event of signal lead to surrounding space, judge to produce the maximum direction of radiation and gain amplitude, gain amplitude is larger, and represent that the directivity of aerial radiation is stronger, radiation propagation is far away.From 11a) can learn figure, the antenna gain of cabling NETC5_1 under 2GHz frequency is 4.474dBi.From 11b) can learn that cabling NETC5_1 is under 2GHz frequency histogram, distance circuit board central axis 0.5m place Electric Field Distribution situation.
step 3, hard fault Reliability assessment
Based on the simulation analysis result to power module, hard fault EMR assessment is carried out to this power module, to obtain the hard fault fiduciary level of power module.Specifically, the characteristic parameter obtained according to the research of step one faulty physical and distribution, carry out Monte Carlo sampling to characteristic parameter, namely carries out Monte Carlo sampling to the relative dielectric constant of circuit board material according to normal distribution.By the realistic model set up in the characteristic parameter data from the sample survey input step two obtained, through repeatedly calculating n the maximum field intensity values obtained on each frequency, and simulate its distribution, as the stress distribution in SSI model, using the electric field intensity limit value that specifies in the GJB151A intensity as SSI model, can carry out Reliability Solution according to SSI theory, the formula of reliability of several conventional distribution is as shown in table 3 below.And then the fiduciary level R obtained on each frequency
h, and draw out frequency-reliability curves figure.
Table 3 formula of reliability
The material of circuit board medium is FR4 level flame resistant material, is to add with epoxy resin the compound substance that filling agent and glass fibre are made, and its relative dielectric constant is 4.3.From table 1, material parameter Normal Distribution, the relative dielectric constant Normal Distribution N (4.3,0.5) of this material.By the normrnd function in Matlab, generate one group of Normal Distribution N (4.3,0.5) random data, namely 4.1611,4.5258,4.3017,4.3620,4.2661,4.4410,4.6301,4.2891,4.4077,4.3302, retained 2 significant digits decimal as emulation input value, and arrange from small to large ord, be followed successively by 4.16,4.27,4.29,4.30,4.33,4.36,4.41,4.44,4.53,4.63.
According to step 2, using these 10 FR4 relative dielectric constants as input value, carry out Emulation of EMC to circuit board, the maximum field value obtained under 2GHz is respectively 64.28,62.87,60.95,58.18,55.81,52.36,50.90,49.83,47.57,44.91dB μ V/m.Utilize SPSS software to carry out fitting of distribution and test of normality to above-mentioned 10 maximum field values, result is as shown in table 4.
Table 4 test of normality
Wherein in Kolmogorov-Smirnova method Sig.=0.2 > 0.05, in Shapiro-Wilk method Sig.=0.714 > 0.05, therefore, electric field value Normal Distribution, i.e. N (54.76,6.682), its distribution plan as shown in figure 12.According to the regulation of RE102 in GJB151A, be 60dB μ V/m at the electric field intensity limit value at 2GHz place, using this limit value as the intensity distributions in SSI model, Electric Field Distribution emulation obtained is as the stress distribution in SSI model, i.e. electric field intensity limit value S=60, s ~ N (54.76,6.682), as shown in figure 13.
SSI solves the fiduciary level at each frequency place
Look into standardized normal distribution table, known, the fiduciary level of circuit board under 2GHz is:
R
h＝0.7823
Obtaining frequency by identical method is 0.5GHz, 1GHz, 1.5GHz, 2.5GHz, 3GHz, 3.5GHz, during 4GHz, the fiduciary level of circuit board is respectively 0.8115, and 0.8012,0.7936,0.7764,0.7717,0.7682,0.7629, final matching obtains frequency-reliability curves, as shown in figure 14.According to the frequency of operation of power module, the hard fault damage Reliability assessment value of power module can be obtained.
step 4, progressive damage Reliability assessment
Based on the simulation analysis result to power module, accumulated damage EMR appraisal procedure is carried out to this power module, to obtain the progressive damage fiduciary level of power module.Choose characteristic parameter random value identical in assessing with hard fault EMR, i.e. relative dielectric constant random value, carry out Multi simulation running model solution, obtain the corresponding multiple electromagnetism physical parameter value under certain frequency on target cabling.This electromagnetism physical parameter can be surface current, consider the ghost effect of circuit board, that (study proves the coefficient result such as excitation electric stress and cabling crosstalk, consider the crosstalk of actual cabling and pure circuit theory diagrams simulation ratio, its noise level can exceed 20dB, namely an order of magnitude).Then the multiple electromagnetism physical parameter value obtained to be substituted in failure message matrixes in corresponding physical model, obtain multiple out-of-service times of circuit board under this electric stress condition, fitting of distribution is carried out to it, failure distribution function and Reliability Function R can be obtained
d.
With regard to the power module of the embodiment of the present invention, when assessing, still choose 10 the FR4 relative dielectric constant random values identical with hard fault lesion assessment step, namely 4.16,4.27,4.29,4.30,4.33,4.36,4.41,4.44,4.53,4.63, Emulation of EMC analysis is carried out to circuit board, carries out assessing with the accumulated damage fault EMR of PPoF methods combining.According to step 2, these 10 FR4 relative dielectric constants are emulated as input value, obtain the electric current of cabling NETC5_1 on 2GHz frequency be 3.73,3.69,3.63,3.60,3.56,3.52,3.50,3.48,3.46,3.44A.
The FR4 relative dielectric constant of SPSS software to electric current and correspondence thereof carries out curve fitting, and result as shown in figure 15.
According to the electric current that above-mentioned emulation obtains, then to add known cross-sectional area S be 0.6mm2, can in the hope of current density j, and current density speedup factor n gets 2, and Diffusion Activation Energy Ea gets 0.58eV, and under condition of work, absolute temperature T gets 300K; Consult Materials Handbook, Boltzmann constant k is 8.62 × 10-5eJ/K, adds the electric current obtained of above-mentioned emulation, by these parameters input Cacle PWA, according to following electromigration failures physical model expression formula
Calculate out-of-service time tf and be respectively 14222,14548,15033,15284,15647,15969,16189,16357,16527,16759 hours.
Life-span fitting of distribution utilizes Matlab software to carry out Weibull distribution inspection to above-mentioned 10 out-of-service times, as shown in figure 16, approximate in straight line, known, this Weibull Distributed Units.Solve further, must the form parameter of this Weibull distribution be 0.01, dimensional parameters be 22.1267, i.e. W (0.01,22), and its distribution function is
Reliability Function is:
the compatible Reliability assessment of step 5, comprehensive electromagnetic
Carry out the comprehensive EMR assessment of DC-isolation formula switch power module.Hard fault generating process and accumulated damage generating process separate, the compatible fiduciary level of the comprehensive electromagnetic of system can be expressed as the product of hard fault electromagnetic compatibility fiduciary level and accumulated damage electromagnetic compatibility fiduciary level.The hard fault fiduciary level obtained according to abovementioned steps and progressive damage fiduciary level, under 2GHz frequency of operation condition, the comprehensive reliability of this circuit board trace NETC5_1 electromagnetic compatibility can be expressed as:
When its index of aging is 15 years, suppose to work every day 8 hours, work in 1 year 200 days, i.e. t
0=24000h, then:
R
s＝0.74
So far, electromagnetic compatibility reliability assessment of the present invention completes.
Can by this quantized result compared with the qualified quantizating index of fiduciary level in engineering when the compatible fiduciary level result of above-mentioned comprehensive electromagnetic is applied, such as, can determine that avionic unit EMC Design fiduciary level qualified index under its frequency of operation condition is 0.9 according in engineering about the experience of avionic unit EMC Design.So the comprehensive reliability of cabling NETC5_1 electromagnetic compatibility under its frequency of operation 2GHz condition be 0.74 show this power module design defective, need to improve product design.By improving the cross-sectional area of the material of pcb board medium, PCB layout, conductive material density, resistivity and cabling, the fiduciary level of the electromagnetic compatibility of power module can be improved.
The present invention is from the angle of faulty physical, the mechanism of action of research galvanomagnetic effect, and utilize emulation technology, in conjunction with the method for stress-strength interference (SSI) model and probability faulty physical (PPoF), establish the direct relation between electromagnetic stress and reliability index, propose the method for assessment avionic unit electromagnetic compatibility reliability, the design for product improves and provides reference frame.
Claims (8)
1. an appraisal procedure for the electromagnetic compatibility reliability of avionic unit power module, is characterized in that comprising the following steps:
Step one: information, comprising:
A. power module hardware and operating condition information is collected;
B. set up the failure message matrix that power module is relevant to electromagnetic compatibility, failure message matrix comprises the physics model of failure of failure mechanism and correspondence;
C. the failure mechanism selecting time before failure the shortest from failure message matrix, as main failure mechanism, obtains the major error physical model of its correspondence;
D. the characteristic parameter relevant to electric field radiation and main failure mechanism and distribution is determined;
Step 2: the simulation analysis of power module electromagnetic compatibility, comprises following sub-step:
A. according to hardware and the operating condition information of step one collection, the realistic model of power module is set up;
B. select the target cabling will analyzed in described realistic model, analysis is carried out to it and arranges;
C. the emulation that power module carries out signal integrity, Power Integrity, magnetic distribution and far-field radiation is solved;
Step 3: hard fault electromagnetic compatibility reliability assessment, comprises following sub-step:
A. according to its distribution, Monte Carlo sampling is carried out to the described characteristic parameter determined in step one;
B. the realistic model will set up in the characteristic parameter data from the sample survey input step two obtained, through repeatedly calculating the multiple maximum field intensity levels obtained on multiple frequency, and simulates its distribution;
C. using the maximum field intensity distributions on multiple frequency as the stress distribution in SSI model, using the intensity of the limit of electric field strength of national regulations as SSI model, carry out Reliability Solution, and draw out frequency-reliability curves figure;
D. the hard fault electromagnetic compatibility reliability value under power module frequency of operation condition is obtained according to frequency-reliability curves figure;
Step 4: accumulated damage electromagnetic compatibility reliability assessment, comprises following sub-step:
A. select the characteristic parameter sample identical with hard fault electromagnetic compatibility reliability assessment, multiple frequency carries out modeling and simulating respectively and solves the electromagnetism physical parameter obtained on target cabling;
B. the multiple electromagnetism physical parameters obtained are substituted in aforementioned major error physical model, obtain multiple out-of-service times of power module under this electric stress condition, fitting of distribution is carried out to it, obtain Reliability Function;
Step 5: the compatible reliability assessment of comprehensive electromagnetic, using the product of the hard fault electromagnetic compatibility reliability value under this power module frequency of operation condition and accumulated damage type electromagnetic compatibility Reliability Function as the comprehensive electromagnetic compatibility fiduciary level of this power module.
2. appraisal procedure according to claim 1, wherein collected in step one hardware and operating condition information comprise function, the working stress condition of power module circuitry plate, composition components and parts inventory on circuit board, the structure of circuit board and components and parts, material, technological parameter, pinout information, solder joint and via hole information.
3. appraisal procedure according to claim 1, the described failure mechanism wherein in step one comprises electromigration, second breakdown, hot carrier's effect, gate oxide breakdown and overheatedly to burn.
4. appraisal procedure according to claim 1, the main failure mechanism wherein described in step one is electromigration.
5. appraisal procedure according to claim 1, the characteristic parameter wherein determined in step one is the relative dielectric constant of power module circuitry plate and components and parts, its Normal Distribution.
6. appraisal procedure according to claim 1, described analysis setting wherein in step 2 comprises: add driving source port to selected cabling, background material and the boundary condition of realistic model are set, mesh parameter is set, solves target, the frequency sweep response of frequency of operation and model, monitor is set.
7. appraisal procedure according to claim 1, wherein emulation described in step 2 solves and comprises:
1) signal integrity is emulated, analyze the impact that the signal cross-talk, the interference problem that are caused by high-frequency circuit electromagnetic stress produce circuit board signal integrality, analyze and obtain signal eye diagram;
2) Power Integrity is emulated, analyze and obtain source impedance and power electric pressure drop;
3) analyze the electromagnetic field that trace signal produces, the field radiation of artificial circuit plate, obtains the Electric Field Distribution of circuit board, Distribution of Magnetic Field, surface current and far-field radiation.
8. appraisal procedure according to claim 1, the electromagnetism physical parameter wherein described in step 4 is the surface current on target cabling.
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