CN104793153A - Preparation method of magnetic sensing device - Google Patents
Preparation method of magnetic sensing device Download PDFInfo
- Publication number
- CN104793153A CN104793153A CN201410027085.2A CN201410027085A CN104793153A CN 104793153 A CN104793153 A CN 104793153A CN 201410027085 A CN201410027085 A CN 201410027085A CN 104793153 A CN104793153 A CN 104793153A
- Authority
- CN
- China
- Prior art keywords
- magnetic
- layer
- preparation
- metal
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention reveals a preparation method of a magnetic sensing device. The preparation method comprises that a first metal layer is arranged on a substrate including CMOS; an insulation self-stop layer is deposited on the first metal layer, a first dielectric material is deposited to form a through hole, and a metal material is deposited, patterned and photo-etched to form a second metal layer; a second dielectric material is deposited, and stopped on the second metal layer by chemically mechanical polishing planarization, and the second dielectric material of the thickness of 1000-5000A is reserved; the second metal layer is led out by opening the through hole, depositing metal and carrying out photo-etching; a groove is formed, and stopped on the insulation self-stop layer by itself during etching; a third dielectric material is deposited; a magnetic material is deposited and patterned; patterns of a magnetic sensor are generated to form a magnetic material layer of an induction unit, and a magnetic conductive unit is formed by using the groove; an insulation material is deposited to form an insulation material layer; and a window is opened, and an electrode on the magnetic material ARM is led out to lead out other electrodes. According to the preparation method, metal can be conveniently led out, and the preparation efficiency and the rate of qualified goods are both improved.
Description
Technical field
The invention belongs to semiconductor process techniques field, relate to a kind of preparation method of device, particularly relate to a kind of preparation method of magnetic sensing device.
Background technology
Electronic compass is one of important applied field of Magnetic Sensor, along with the fast development of consumer electronics in recent years, except navigational system, increasing smart mobile phone and panel computer is also had also to start standard configuration electronic compass, bring very large application convenient to user, in recent years, the demand of Magnetic Sensor also starts from two axially three axle development.The Magnetic Sensor of diaxon, i.e. planar magnetic sensor, can be used for magnetic field intensity on measurement plane and direction, can representing by X and Y-axis both direction.
AMR Magnetic Sensor adopts anisotropic magnetoresistance (Anisotropic Magneto-Resistance) material to carry out the size of magnetic induction density in detection space.
Change in a linear fashion to make measurement result, plain conductor on AMR array is 45° angle oblique arrangement, electric current flows through from AMR material and rotates 45 ° through the flow direction of plain conductor after-current and the angle of AMR line, and namely when not having externally-applied magnetic field, AMR line self poling direction and electric current present the angle of 45 ° as shown in Figure 1.
When there is external magnetic field Ha, the polarised direction on AMR unit will change and be no longer initial direction, and so the angle theta of magnetic direction M and electric current I also can change, and as shown in Figure 2, thus causes the change of AMR self resistance.
By the measurement changed AMR cell resistance, intensity and the direction of external magnetic field can be obtained.In the application of reality, in order to improve the sensitivity etc. of device, Magnetic Sensor can utilize Wheatstone bridge or half-bridge to detect the change of AMR resistance, as shown in Figure 3.R1/R2/R3/R4 is the AMR resistance R0 that original state is identical, and in time external magnetic field being detected, R1/R2 resistance increases Δ R and R3/R4 reduces Δ R (or contrary).Like this when not having external magnetic field, the output of electric bridge is zero; And when there being external magnetic field, the output of electric bridge is a small voltage Δ V.
Current three-axis sensor the magnetic sensing element (being erected on substrate in X/Y direction) of a plane (X, Y diaxon) sensing element and Z-direction is carried out system in package combine, to realize the function of three axle sensings; That is need plane sensing element and Z-direction magnetic sensing element to be arranged at respectively on the brilliant or chip of two circles, link together finally by encapsulation and peripheral circuit, three discrete chips inside a sensor component, may be comprised.The advantage of such method has better Z axis performance (substantially the same with the performance of X, Y-axis), technical threshold is lower, but require very high to encapsulation, introduce higher packaging cost (cost of encapsulation occupies the very most of of whole chip cost), on the other hand, the reliability of the device that this method obtains is poor, and the size of device is also difficult to reduce further.
Nowadays, usually need ASIC peripheral circuit to drive in the application of Magnetic Sensor, current main employing asic chip and magnetic sensing chip carry out SIP encapsulation.And the single-chip pattern of SOC is developing direction, be characterized in that there is higher integrated level, better combination property and lower cost.SOC pattern continues to manufacture Magnetic Sensor above the top-level metallic of asic chip, finally makes Magnetic Sensor and ASIC organically combine, and avoids and adopt lead-in wire method to connect.
When manufacture asic chip, 4-6 layer metal level usually can be adopted; Asic chip and Magnetic Sensor in conjunction with time, after the top-level metallic top metal of asic chip finishes, normally deposit the dielectric layer IMd of 3um again, but there is very large difficulty in the lead-in wire of the IMD of 3um, be difficult to connect.Cause existing preparation method's process CIMS complicated, preparation time is longer, and preparation cost is higher.
In view of this, nowadays in the urgent need to designing a kind of new magnetic sensing device preparation method, to overcome the above-mentioned defect of existing magnetic sensing device.
Summary of the invention
Technical matters to be solved by this invention is: the preparation method providing a kind of magnetic sensing device, asic chip and Magnetic Sensor can be organically combined, and is convenient to draw metal, can improve preparation efficiency and the percentage of A-class goods.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A preparation method for magnetic sensing device, described preparation method comprises the steps:
Step S101, substrate containing peripheral circuit are provided with the first metal layer or MIM capacitor;
Step S102, on the first metal layer deposition insulation self-stopping technology layer, then deposit first medium material, form through hole, deposit metallic material draws the first metal layer, and graphically, photoetching, forms metallic pattern, as the second metal level;
Step S103, deposition second medium material, adopt chemically mechanical polishing planarization to be parked on the second metal level, meanwhile, retain the second medium material of 1000 ~ 15000A thickness;
Step S104, open through hole, plated metal, carry out photoetching, draw the second metal level;
Step S105, above insulation self-stopping technology layer, the side of the second metal level forms groove, and during etching groove, self-stopping technology is above insulation self-stopping technology layer;
Step S106, deposition the 3rd dielectric material;
Step S107, deposition magnetic material, graphically; Generate the figure of Magnetic Sensor, form the flux material layer of sensing unit, and form magnetic conduction unit by the application of groove; Magnetic material is AMR material, or is GMR material, or is TMR material;
Step S108, deposition of insulative material, form insulation material layer;
Step S109, open window, the electrode on flux material layer is drawn, and other electrodes are drawn.
As a preferred embodiment of the present invention, in described step S107, the main part of described magnetic conduction unit is arranged in groove, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures;
Sensing unit is arranged near groove, be connected with between magnetic conduction unit or disconnect, or part connects, part disconnects, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are respectively X-axis, Y-axis, Z axis.
As a preferred embodiment of the present invention, described preparation method also comprises step S110, Multiple depositions dielectric layer and metal level, carries out graphical.
As a preferred embodiment of the present invention, in described step S110, the metal level of deposition is as Autonomous test metal level or SET/RESET effect.
As a preferred embodiment of the present invention, described preparation method also comprises step S111, continues to manufacture layer of dielectric material and metal level.
As a preferred embodiment of the present invention, in step S101, described the first metal layer is the material containing Al or Ti;
In step S106, the 3rd dielectric material is multilayer or individual layer, and the 3rd dielectric material comprises SiOx or/and SiN or SiOx/SiN material.
As a preferred embodiment of the present invention, in step S107, magnetic material is also provided with one or more layers protects material layer.
As a preferred embodiment of the present invention, in described step S104, in through hole, utilize chemical vapor deposition tungsten, chemically mechanical polishing planarization, remove the tungsten of substrate surface, the tungsten in a retaining holes.
As a preferred embodiment of the present invention, in described step S104, be also included in tungsten disposed thereon metal, form metallic pattern after photolithography patterning, the metal material of deposition can stop follow-up over etching when opening hole; In step S104, Direct precipitation the 3rd metal level in through hole, and carry out photoetching.
A preparation method for magnetic sensing device, described preparation method comprises the steps:
Step S101, substrate containing peripheral circuit are provided with the first metal layer or MIM capacitor;
Step S102, on the first metal layer deposition first medium material, form through hole, deposit metallic material, and graphically, photoetching, forms metallic pattern, as the second metal level;
Step S103, deposition second medium material, adopt chemically mechanical polishing planarization to be parked on the second metal level, meanwhile, retain the second medium material of 1000 ~ 15000A thickness;
Step S104, open through hole, plated metal, carry out photoetching, draw the second metal level;
The side of step S105, on the first metal layer side, the second metal level forms groove, self-stopping technology side on the first metal layer during etching groove; Or the groove of etching is positioned at above the first metal layer, does not contact with the first metal layer;
Step S106, deposition the 3rd dielectric material;
Step S107, deposition magnetic material, graphically; Generate the figure of Magnetic Sensor, form the flux material layer of sensing unit, and form magnetic conduction unit by the application of groove;
Step S108, deposition of insulative material, form insulation material layer;
Step S109, open window, the electrode on flux material layer is drawn, and other electrodes are drawn.
Beneficial effect of the present invention is: the preparation method of the magnetic sensing device that the present invention proposes, asic chip and Magnetic Sensor can be organically combined, groove necessary for Z axis in three-axis sensor is arranged on asic chip inside, reduce the thickness of the dielectric layer that ASIC and sensor chip are arranged, after adopting the present invention, just the signal of ASIC can be drawn out to AMR and top-level metallic with stand CMOS, solve a difficult problem for integrated technique, otherwise must be drawn by ASIC signal by technique of windowing and go between twice or thrice, cost is huge; Further, by the solution of multiple self-stopping technology layer, larger window can be had in the process manufacturing groove, obtain smooth groove, avoid the formation of microtrench; The present invention not only can improve preparation efficiency, reduce manufacturing cost, and improves the performance of Z axis sensor, improves product yield.
Accompanying drawing explanation
Fig. 1 is the existing magnetic material of magnetic sensing device and the structural representation of wire.
Fig. 2 is the angle schematic diagram with or without magnetic direction and direction of current in the situation of outfield.
Fig. 3 is the connection layout of Wheatstone bridge.
Fig. 4 is the schematic diagram after step S101 of the present invention.
Fig. 5 is the schematic diagram after step S102 of the present invention deposits first medium material.
Fig. 6 is the schematic diagram after step S102 of the present invention forms the second metal material.
Fig. 7 is the schematic diagram after step S103 of the present invention.
Fig. 8 is the schematic diagram after step S104 of the present invention.
Fig. 9 is the schematic diagram after step S105 of the present invention.
Figure 10 is the schematic diagram after step S106 of the present invention.
Figure 11 is the schematic diagram after step S107 of the present invention.
Figure 12 is the schematic diagram after step S108 of the present invention.
Embodiment
The preferred embodiments of the present invention are described in detail below in conjunction with accompanying drawing.
Embodiment one
Present invention is disclosed a kind of preparation method of magnetic sensing device, the first metal layer also deposits insulation self-stopping technology layer.Refer to Fig. 4 to Figure 12, the preparation technology of the present embodiment specifically comprises the steps:
[step S101] refers to Fig. 4, and the substrate 301 containing peripheral circuit (as CMOS) is provided with the first metal layer 302; Or, the first metal layer 302 is prepared in the substrate 301 containing peripheral circuit;
[step S102] refers to Fig. 5, and on the first metal layer 302, deposition insulation self-stopping technology layer 303, then deposits first medium material 304, form through hole; Then, as shown in Figure 6, deposit metallic material, graphically, photoetching, forms metallic pattern, as the second metal level 305;
[step S103] refers to Fig. 7, and deposition second medium material 306, adopts chemically mechanical polishing planarization to be parked on the second metal level 305, meanwhile, retains the second medium material 306 of 1000 ~ 15000A thickness.Second medium material is multilayer or individual layer, and second medium material comprises SiN or/and SiOx/SiN is or/and SiOx material.
[step S104] refers to Fig. 8, opens through hole, plated metal, carries out photoetching, forms through hole 307 and metal PAD308, draws the second metal level.
[step S105] refers to Fig. 9, and above the first metal layer 302, the side of the second metal level 305 forms groove 309, and during etching, self-stopping technology is above insulation self-stopping technology layer 303, and namely the bottom of groove 309 is on insulation self-stopping technology layer 303.Described the first metal layer can for the conductive material containing Al or Ti.
[step S106] refers to Figure 10, deposition magnetic material, graphically; Generate the figure of Magnetic Sensor, form the flux material layer 310 of sensing unit, and form magnetic conduction unit 311 by the application of groove.Certainly, magnetic material can also be provided with one or more layers protects material layer.Or before deposition magnetic material, deposit one deck or multilayer dielectric layer.
The main part of described magnetic conduction unit 311 is arranged in groove 309, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures; Sensing unit is arranged near groove 309, be connected with between magnetic conduction unit 311 or disconnect, or part connects, part disconnects, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit 311 exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit 311; First direction, second direction, third direction are mutually vertical between two.First direction, second direction, third direction are respectively X-direction, Y direction, Z-direction.
[step S107] refers to Figure 11, and deposition the 4th dielectric material, forms the 4th layer of dielectric material 312;
[step S108] refers to Figure 12, opens window, is drawn by the electrode on flux material layer (such as AMR or GMR or TMR material), drawn by other electrodes by metal lead wire 314 by metal lead wire 313.
It should be noted that, in the present embodiment, as shown in Figure 10 to Figure 13, containing the metal do not etched in groove; This is mainly limited to actual etching technics, may not etched completely by the metal in groove.
Embodiment two
The difference of the present embodiment and embodiment one is, in the present embodiment, can utilize chemical vapor deposition tungsten, chemically mechanical polishing planarization in through hole, removes the tungsten of substrate surface, the tungsten in a retaining holes.
This step can also be included in tungsten disposed thereon metal, forms metallic pattern after photolithography patterning, and the metal material of deposition can stop follow-up over etching when opening hole.
Embodiment three
The difference of the present embodiment and embodiment one is, in the present embodiment, does not arrange insulation self-stopping technology layer above the first metal layer; Described preparation method comprises the steps:
Step S101, preparing the first metal layer or MIM capacitor containing in the substrate of CMOS;
Step S102, on the first metal layer deposition first medium material, form through hole, deposit metallic material, and graphically, photoetching, forms metallic pattern, as the second metal level;
Step S103, deposition second medium material, adopt chemically mechanical polishing planarization to be parked on the second metal level, meanwhile, retain the second medium material of 1000 ~ 15000A thickness;
Step S104, open through hole, plated metal, carry out photoetching, draw the second metal level;
The side of step S105, on the first metal layer side, the second metal level forms groove, self-stopping technology side on the first metal layer during etching groove; Or the groove of etching is positioned at above the first metal layer, does not contact with the first metal layer;
Step S106, deposition the 3rd dielectric material;
Step S107, deposition magnetic material, graphically; Generate the figure of Magnetic Sensor, form the flux material layer of sensing unit, and form magnetic conduction unit by the application of groove;
Step S108, deposition of insulative material, form insulation material layer;
Step S109, open window, the electrode on magnetic materials A MR is drawn, other electrodes are drawn.
In sum, the preparation method of the magnetic sensing device that the present invention proposes, asic chip and Magnetic Sensor can be organically combined, groove necessary for Z axis in three-axis sensor is arranged on asic chip inside, reduce the thickness of the dielectric layer that ASIC and sensor chip are arranged, after adopting the present invention, just the signal of ASIC can be drawn out to AMR and top-level metallic with stand CMOS, solve a difficult problem for integrated technique, otherwise must be drawn by ASIC signal by technique of windowing and go between twice or thrice, cost is huge; Further, by the solution of multiple self-stopping technology layer, larger window can be had in the process manufacturing groove, obtain smooth groove, avoid the formation of microtrench; The present invention not only can improve preparation efficiency, reduce manufacturing cost, and improves the performance of Z axis sensor, improves product yield.
Here description of the invention and application is illustrative, not wants by scope restriction of the present invention in the above-described embodiments.Distortion and the change of embodiment disclosed are here possible, are known for the replacement of embodiment those those of ordinary skill in the art and the various parts of equivalence.Those skilled in the art are noted that when not departing from spirit of the present invention or essential characteristic, the present invention can in other forms, structure, layout, ratio, and to realize with other assembly, material and parts.When not departing from the scope of the invention and spirit, can other distortion be carried out here to disclosed embodiment and change.
Claims (11)
1. a preparation method for magnetic sensing device, is characterized in that, described preparation method comprises the steps:
Step S101, substrate containing peripheral circuit are provided with the first metal layer or MIM capacitor;
Step S102, on the first metal layer deposition insulation self-stopping technology layer, then deposit first medium material, form through hole, deposit metallic material draws the first metal layer, and graphically, photoetching, forms metallic pattern, as the second metal level;
Step S103, deposition second medium material, adopt chemically mechanical polishing planarization to be parked on the second metal level, meanwhile, retain the second medium material of 1000 ~ 15000A thickness;
Step S104, open through hole, plated metal, carry out photoetching, draw the second metal level;
Step S105, above insulation self-stopping technology layer, the side of the second metal level forms groove, and during etching groove, self-stopping technology is above insulation self-stopping technology layer;
Step S106, deposition the 3rd dielectric material;
Step S107, deposition magnetic material, graphically; Generate the figure of Magnetic Sensor, form the flux material layer of sensing unit, and form magnetic conduction unit by the application of groove;
Step S108, deposition of insulative material, form insulation material layer;
Step S109, open window, the electrode on flux material layer is drawn, and other electrodes are drawn.
2. the preparation method of magnetic sensing device according to claim 1, is characterized in that:
In described step S107, the main part of described magnetic conduction unit is arranged in groove, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures;
Sensing unit is arranged near groove, be connected with between magnetic conduction unit or disconnect, or part connects, part disconnects, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are respectively X-axis, Y-axis, Z axis.
3. the preparation method of magnetic sensing device according to claim 1, is characterized in that:
Described preparation method also comprises step S110, Multiple depositions dielectric layer and metal level, carries out graphical.
4. the preparation method of magnetic sensing device according to claim 3, is characterized in that:
In described step S110, the metal level of deposition is as Autonomous test metal level or SET/RESET effect.
5. the preparation method of magnetic sensing device according to claim 1, is characterized in that:
Described preparation method also comprises step S111, continues to manufacture layer of dielectric material and metal level.
6. the preparation method of magnetic sensing device according to claim 1, is characterized in that:
Described magnetic material is AMR material, or is GMR material, or is TMR material.
7. the preparation method of magnetic sensing device according to claim 1, is characterized in that:
In step S101, described the first metal layer is the material containing Al or Ti;
In step S106, the 3rd dielectric material is multilayer or individual layer, and the 3rd dielectric material comprises SiOx or/and SiN or SiOx/SiN material.
8. the preparation method of magnetic sensing device according to claim 1, is characterized in that:
In step S107, magnetic material is also provided with one or more layers protects material layer.
9. the preparation method of magnetic sensing device according to claim 1, is characterized in that:
In described step S104, in through hole, utilize chemical vapor deposition tungsten, chemically mechanical polishing planarization, remove the tungsten of substrate surface, the tungsten in a retaining holes.
10. the preparation method of magnetic sensing device according to claim 8, is characterized in that:
In described step S104, be also included in tungsten disposed thereon metal, form metallic pattern after photolithography patterning, the metal material of deposition can stop follow-up over etching when opening hole; In step S104, Direct precipitation the 3rd metal level in through hole, and carry out photoetching.
The preparation method of 11. 1 kinds of magnetic sensing devices, is characterized in that, described preparation method comprises the steps:
Step S101, substrate containing peripheral circuit are provided with the first metal layer or MIM capacitor;
Step S102, on the first metal layer deposition first medium material, form through hole, deposit metallic material, and graphically, photoetching, forms metallic pattern, as the second metal level;
Step S103, deposition second medium material, adopt chemically mechanical polishing planarization to be parked on the second metal level, meanwhile, retain the second medium material of 1000 ~ 15000A thickness;
Step S104, open through hole, plated metal, carry out photoetching, draw the second metal level;
The side of step S105, on the first metal layer side, the second metal level forms groove, self-stopping technology side on the first metal layer during etching groove; Or the groove of etching is positioned at above the first metal layer, does not contact with the first metal layer;
Step S106, deposition the 3rd dielectric material;
Step S107, deposition magnetic material, graphically; Generate the figure of Magnetic Sensor, form the flux material layer of sensing unit, and form magnetic conduction unit by the application of groove;
Step S108, deposition of insulative material, form insulation material layer;
Step S109, open window, the electrode on flux material layer is drawn, and other electrodes are drawn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410027085.2A CN104793153B (en) | 2014-01-21 | 2014-01-21 | The preparation method of magnetic sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410027085.2A CN104793153B (en) | 2014-01-21 | 2014-01-21 | The preparation method of magnetic sensing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104793153A true CN104793153A (en) | 2015-07-22 |
| CN104793153B CN104793153B (en) | 2018-02-02 |
Family
ID=53558121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410027085.2A Active CN104793153B (en) | 2014-01-21 | 2014-01-21 | The preparation method of magnetic sensing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104793153B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106405443A (en) * | 2015-07-29 | 2017-02-15 | 英飞凌科技股份有限公司 | Magnet field sensor |
| US10338159B2 (en) | 2007-05-30 | 2019-07-02 | Infineon Technologies Ag | Magnetic-field sensor with a back-bias magnet arrangement |
| US10338158B2 (en) | 2007-05-30 | 2019-07-02 | Infineon Technologies Ag | Bias magnetic field sensor |
| US10429456B2 (en) | 2015-12-17 | 2019-10-01 | Analog Devices Global | Modules and methods including magnetic sensing structures |
| US10852367B2 (en) | 2007-05-30 | 2020-12-01 | Infineon Technologies Ag | Magnetic-field sensor with a back-bias magnet |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4470873A (en) * | 1982-11-30 | 1984-09-11 | Copal Company Limited | Method of manufacturing magnetic sensor comprising at least two magnetoresistive elements |
| CN101142494A (en) * | 2005-03-17 | 2008-03-12 | 雅马哈株式会社 | Magnetic sensor and manufacturing method thereof |
| JP4323220B2 (en) * | 2003-05-28 | 2009-09-02 | 財団法人電気磁気材料研究所 | Thin film magnetic sensor and manufacturing method thereof |
| CN101540337A (en) * | 2008-03-18 | 2009-09-23 | 株式会社理光 | Magnetic sensor and mobile information terminal apparatus |
| CN101976723A (en) * | 2010-08-10 | 2011-02-16 | 杭州电子科技大学 | Manufacture method of current isolator |
| US8110119B2 (en) * | 2005-01-21 | 2012-02-07 | International Business Machines Corporation | Method of manufacturing a magnetic sensor with tilted magnetoresistive structures |
| CN102830373A (en) * | 2012-09-05 | 2012-12-19 | 复旦大学 | Three-dimensional anisotropic magnetic field sensor employing 45-degree- oblique angle and manufacturing method thereof |
| JP5348080B2 (en) * | 2002-03-27 | 2013-11-20 | ヤマハ株式会社 | Magnetic sensor and manufacturing method thereof |
-
2014
- 2014-01-21 CN CN201410027085.2A patent/CN104793153B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4470873A (en) * | 1982-11-30 | 1984-09-11 | Copal Company Limited | Method of manufacturing magnetic sensor comprising at least two magnetoresistive elements |
| JP5348080B2 (en) * | 2002-03-27 | 2013-11-20 | ヤマハ株式会社 | Magnetic sensor and manufacturing method thereof |
| JP4323220B2 (en) * | 2003-05-28 | 2009-09-02 | 財団法人電気磁気材料研究所 | Thin film magnetic sensor and manufacturing method thereof |
| US8110119B2 (en) * | 2005-01-21 | 2012-02-07 | International Business Machines Corporation | Method of manufacturing a magnetic sensor with tilted magnetoresistive structures |
| CN101142494A (en) * | 2005-03-17 | 2008-03-12 | 雅马哈株式会社 | Magnetic sensor and manufacturing method thereof |
| CN101540337A (en) * | 2008-03-18 | 2009-09-23 | 株式会社理光 | Magnetic sensor and mobile information terminal apparatus |
| CN101976723A (en) * | 2010-08-10 | 2011-02-16 | 杭州电子科技大学 | Manufacture method of current isolator |
| CN102830373A (en) * | 2012-09-05 | 2012-12-19 | 复旦大学 | Three-dimensional anisotropic magnetic field sensor employing 45-degree- oblique angle and manufacturing method thereof |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10338159B2 (en) | 2007-05-30 | 2019-07-02 | Infineon Technologies Ag | Magnetic-field sensor with a back-bias magnet arrangement |
| US10338158B2 (en) | 2007-05-30 | 2019-07-02 | Infineon Technologies Ag | Bias magnetic field sensor |
| US10852367B2 (en) | 2007-05-30 | 2020-12-01 | Infineon Technologies Ag | Magnetic-field sensor with a back-bias magnet |
| US10996290B2 (en) | 2007-05-30 | 2021-05-04 | Infineon Technologies Ag | Magnetic-field sensor having a magnetic body with inhomogeneous magnetization |
| US11592500B2 (en) | 2007-05-30 | 2023-02-28 | Infineon Technologies Ag | Magnetic-field sensor having a magnetic field sensor arrangement and a magnetic body with inhomogeneous magnetization |
| CN106405443A (en) * | 2015-07-29 | 2017-02-15 | 英飞凌科技股份有限公司 | Magnet field sensor |
| CN106405443B (en) * | 2015-07-29 | 2020-03-17 | 英飞凌科技股份有限公司 | Magnetic field sensor |
| US10429456B2 (en) | 2015-12-17 | 2019-10-01 | Analog Devices Global | Modules and methods including magnetic sensing structures |
| US11061086B2 (en) | 2015-12-17 | 2021-07-13 | Analog Devices Global | Magnetic device with magnetic structure and micro-fluidic structure |
| US11649157B2 (en) | 2015-12-17 | 2023-05-16 | Analog Devices International Unlimited Company | Devices, systems and methods including magnetic structures and micromechanical structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104793153B (en) | 2018-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102147452B (en) | Magnetic field sensor | |
| CN104793153A (en) | Preparation method of magnetic sensing device | |
| CN105261699A (en) | Manufacturing method of single-chip triaxial anisotropic magnetoresistive sensor | |
| CN103885004A (en) | Magnetic sensing device, and magnetic sensing method and manufacturing technology thereof | |
| CN103887428A (en) | Manufacturing technology of magnetic sensing device | |
| CN104218147B (en) | The preparation method of Magnetic Sensor and Magnetic Sensor | |
| CN104122513A (en) | High-density magnetic sensor device and magnetic induction method and preparation process thereof | |
| CN204964732U (en) | Single -chip triaxial anisotropic magnetoresistive sensor | |
| CN104183696A (en) | Preparation process for magnetic sensing device | |
| CN104422905B (en) | Magnetic Sensor and its preparation process | |
| TW201602609A (en) | Magnetic field sensor arrangement, corresponding process for its production and operating method | |
| CN104155620B (en) | Magnetic sensing device and its inducing method, preparation technology | |
| CN103887427A (en) | Manufacturing technology of magnetic sensing device | |
| CN104122514A (en) | Magnetic sensor device and magnetic induction method and preparation process thereof | |
| CN104914385A (en) | Magnetic sensing device and manufacturing method thereof | |
| CN104793155B (en) | A kind of preparation technology of magnetic sensing device and the device | |
| CN104422908A (en) | Preparation process of magnetic sensation device | |
| CN104793156B (en) | The preparation method of magnetic sensing device | |
| CN104793154A (en) | Magnetic sensor and preparation technology thereof | |
| CN104459574B (en) | A kind of preparation technology of magnetic sensing device | |
| CN104795490A (en) | Preparation technology of magnetic sensor | |
| CN104515957B (en) | magnetic sensing device and preparation method thereof | |
| CN104347798A (en) | Magnetic sensor and preparation method thereof | |
| CN104422906A (en) | Magnetic sensor and preparation technology thereof | |
| CN104459576A (en) | Magnetic sensing device and magnetic induction method and manufacturing process of magnetic sensing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: Room 307, 3rd floor, 1328 Dingxi Road, Changning District, Shanghai 200050 Patentee after: Shanghai Sirui Technology Co.,Ltd. Address before: 201815 No. 3157, building 3, No. 1368, Xingxian Road, Jiading District, Shanghai Patentee before: Shanghai Silicon Technology Co.,Ltd. |