CN104779315A - 一种石墨烯/磷化铟光电探测器及其制备方法 - Google Patents
一种石墨烯/磷化铟光电探测器及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种石墨烯/磷化铟光电探测器,自下而上依次有磷化铟层、石墨烯层和表面电极;或者自下而上依次有磷化铟层、绝缘层和表面电极,还设有石墨烯层,石墨烯层设置在磷化铟层上,并与表面电极接触。制备该光电探测器的方法是:将石墨烯转移至洁净的磷化铟片上,再在石墨烯层上制作表面电极;或者在洁净的磷化铟片上生长绝缘层,再在上述绝缘层上制作表面电极,最后将石墨烯转移至磷化铟上,并使石墨烯与表面电极相接触。本发明的石墨烯/磷化铟光电探测器利用石墨烯材料的高载流子迁移率和良好的光电响应,结合磷化铟优异的半导体光电性质,光响应灵敏,响应度高,且制备工艺简单。
Description
技术领域
本发明涉及一种光电探测器及其制备方法,尤其是一种石墨烯/磷化铟光电探测器及其制备方法,属于光电器件技术领域。
背景技术
石墨烯二维原子材料在2004年首次被发现并制备出来以后,更多的研究表明石墨烯材料具有优异的电学、光学和机械性质,如极高的载流子迁移率、很宽波长范围内的光响应、高的杨氏模量和柔韧性等。这些独特的性质使石墨烯有可能广泛地应用于光电子技术领域,包括光电探测器、太阳电池等。近年来,不少研究者进行石墨烯光探测器的应用研究,它的优势是可以实现超快和较宽波段的光谱响应。但由于石墨烯只有原子尺寸的厚度,吸收的光比较少(~2.3%),影响了光探测的响应度。寻找合适的材料与石墨烯结合或设计新的结构,增强其光探测响应,是研究和应用的重点。
发明内容
本发明的目的在于提供一种响应度高,制备工艺简单的石墨烯/磷化铟光电探测器及其制备方法。
本发明的石墨烯/磷化铟光电探测器可以采用如下两种技术方案实现:
技术方案一
本发明的石墨烯/磷化铟光电探测器,自下而上依次有p型或n型掺杂的磷化铟层、石墨烯层和表面电极;
制备该光电探测器的方法是:将石墨烯转移至洁净的p型或n型掺杂磷化铟片上获得石墨烯层,再在石墨烯层上制作表面电极。
技术方案二
本发明的石墨烯/磷化铟光电探测器,自下而上依次有p型或n型掺杂的磷化铟层、绝缘层和表面电极,绝缘层面积占磷化铟层面积的5-90%,表面电极面积小于绝缘层面积,所述的光电探测器还设有石墨烯层,石墨烯层设置在磷化铟层上,并与表面电极接触。
制备该光电探测器的方法是:在洁净的p型或n型掺杂磷化铟片上生长绝缘层,并预留制作石墨烯层的面积,再在上述绝缘层上制作表面电极,最后将石墨烯转移至上述预留面积处,并使石墨烯与表面电极相接触。
本技术方案中,所述的绝缘层可以是氧化硅、氮化硅、氮氧化硅、氧化铝或者氮化硼,其厚度通常为1-200nm。
上述两种技术方案中,所述的石墨烯层中石墨烯通常为1层至10层。
所述的表面电极通常为金、钯、银、钛、铬、镍、铂和铝中的一种或者几种的复合电极。
传统的体半导体材料,尤其是Ⅲ-Ⅴ族化合物半导体,具有优异的光电性质。石墨烯与半导体材料结合,若两者的费米能级存在较大差异,可形成肖特基结。光照下,光子主要由半导体材料吸收并产生电子空穴对,在结势垒的作用下,电子或空穴注入石墨烯内。石墨烯内载流子数量随之发生变化,其电阻率也会改变。外界光强发生变化,注入的电子或空穴浓度也改变。石墨烯的电阻值变化即可反映对外界光照的探测响应情况。
此外,石墨烯的费米能级可以通过掺杂或外加电压调节,肖特基的势垒也相应改变,器件的光电探测性能也可进行调节。在Ⅲ-Ⅴ族化合物半导体中,磷化铟是直接带隙材料,其禁带宽度最接近于太阳光谱能量的最优值(1.34ev),具有良好的光谱吸收和响应。
综上所述,本发明具有的有益效果是:与传统的光电探测器相比,本发明的石墨烯/磷化铟光电探测器利用石墨烯的高载流子迁移率和良好的光电响应及磷化铟优异光电性质,具有更好的光吸收及光探测响应性能;且其制备工艺简单,易于实现。
附图说明
图1为石墨烯/磷化铟光电探测器的一种结构的示意图;
图2为石墨烯/磷化铟光电探测器的另一种结构的示意图;
图3为实施例1制得的石墨烯/磷化铟光电探测器在光开关状态下的电流变化曲线。
具体实施方式
以下结合附图和具体实施例对本发明做进一步说明。
参照图1,本发明的石墨烯/磷化铟光电探测器,自下而上依次有p型或n型掺杂的磷化铟层1、石墨烯层2和表面电极3;或者如图2所示,自下而上依次有p型或n型掺杂的磷化铟层1、绝缘层4和表面电极3,绝缘层4面积占磷化铟层1面积的5-90%,表面电极3面积小于绝缘层4面积,所述的光电探测器还设有石墨烯层2,石墨烯层2设置在磷化铟层1上,并与表面电极3接触。
实施例1
1)将p型磷化铟片样品先后浸入丙酮、异丙醇溶液中进行表面清洗;
2)将单层石墨烯转移至经过清洗的磷化铟片上;
3)在石墨烯上利用热蒸发工艺沉积100nm金电极,得到石墨烯/磷化铟光电探测器。
在两个表面电极间加电压,通过测试光电探测器在不同光照下电流的变化,可反应出其对不同光谱和光强的响应。图3即对本例制得的光电探测器加5V电压时,在不加光照和1个标准太阳光光照下间隔连续测试的电流值变化曲线,可以看出本例制得的光电探测器光响应灵敏,响应度高。
实施例2
1)将n型磷化铟片先后浸入丙酮、异丙醇溶液中进行表面清洗;
2)将10层石墨烯转移至经过清洗的磷化铟片上;
3)在石墨烯上利用热蒸发工艺沉积200nm镍/金电极,得到石墨烯/磷化铟光电探测器。
实施例3
1)将n型磷化铟片先后浸入丙酮、异丙醇溶液中进行表面清洗;
2)将3层石墨烯转移至经过清洗的磷化铟片上;
3)在石墨烯上丝网印刷500nm银电极,得到石墨烯/磷化铟光电探测器。
实施例4
1)将p型磷化铟片先后浸入丙酮、异丙醇溶液中进行表面清洗;
2)将6层石墨烯转移至经过清洗的磷化铟片上;
3)在石墨烯上磁控溅射20nm钛/镍电极,得到石墨烯/磷化铟光电探测器。
实施例5
1)将p型磷化铟片先后浸入丙酮、异丙醇溶液中进行表面清洗;
2)在磷化铟片上掩膜电子束蒸发沉积氧化硅80nm,其在磷化铟表面覆盖面积比例为5%;
3)在氧化硅上电子束蒸发沉积40nm金电极,金电极面积小于氧化硅面积;
4)将单层石墨烯转移至经过蒸发电极的磷化铟片上,且石墨烯与金电极相接触,得到石墨烯/磷化铟光电探测器。
实施例6
1)将n型磷化铟片先后浸入丙酮、异丙醇溶液中进行表面清洗;
2)在磷化铟片上掩膜电子束蒸发沉积氮化硅1nm,其在磷化铟表面覆盖面积比例为80%;
3)在氮化硅上电子束蒸发沉积20nm银电极,银电极面积小于氮化硅面积;
4)将8层石墨烯转移至经过蒸发电极的磷化铟片上,且石墨烯与银电极相接触,得到石墨烯/磷化铟光电探测器。
实施例7
1)将p型磷化铟片先后浸入丙酮、异丙醇溶液中进行表面清洗;
2)在磷化铟片上掩膜电子束蒸发沉积氧化铝200nm,其在磷化铟表面覆盖面积比例为90%;
3)在氧化铝上电子束蒸发沉积40nm金/钯电极,金/钯电极的面积小于氧化铝的面积;
4)将3层石墨烯转移至经过蒸发电极的磷化铟片上,且石墨烯与金/钯电极相接触,得到石墨烯/磷化铟光电探测器。
Claims (6)
1. 一种石墨烯/磷化铟光电探测器,其特征在于自下而上依次有p型或n型掺杂的磷化铟层(1)、石墨烯层(2)和表面电极(3);或者自下而上依次有p型或n型掺杂的磷化铟层(1)、绝缘层(4)和表面电极(3),绝缘层(4)面积占磷化铟层(1)面积的5-90%,表面电极(3)面积小于绝缘层(4)面积,所述的光电探测器还设有石墨烯层(2),石墨烯层(2)设置在磷化铟层(1)上,并与表面电极(3)接触。
2. 根据权利要求1所述的石墨烯/磷化铟光电探测器,其特征在于所述的石墨烯层(2)中石墨烯为1层至10层。
3. 根据权利要求1所述的石墨烯/磷化铟光电探测器,其特征在于所述的绝缘层(4)是氧化硅、氮化硅、氮氧化硅、氧化铝或者氮化硼。
4. 根据权利要求1所述的石墨烯/磷化铟光电探测器,其特征在于所述的绝缘层(4)的厚度为1-200nm。
5. 根据权利要求1所述的石墨烯/磷化铟光电探测器,其特征在于所述的表面电极(3)为金、钯、银、钛、铬、镍、铂和铝中的一种或者几种的复合电极。
6. 制备如权利要求1-5任一项所述的石墨烯/磷化铟光电探测器的方法,其特征在于包括如下步骤:
将石墨烯转移至洁净的p型或n型掺杂磷化铟片(1)上获得石墨烯层(2),再在石墨烯层(2)上制作表面电极(3);
或者在洁净的p型或n型掺杂磷化铟片(1)上生长绝缘层(4),并预留制作石墨烯层(2)的面积,再在上述绝缘层(4)上制作表面电极(3),最后将石墨烯转移至上述预留面积处,并使石墨烯与表面电极(3)相接触。
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