CN104777152B - CNT Terahertz sensing model based on surface enhanced Raman scattering effect - Google Patents
CNT Terahertz sensing model based on surface enhanced Raman scattering effect Download PDFInfo
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- CN104777152B CN104777152B CN201510198542.9A CN201510198542A CN104777152B CN 104777152 B CN104777152 B CN 104777152B CN 201510198542 A CN201510198542 A CN 201510198542A CN 104777152 B CN104777152 B CN 104777152B
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Abstract
A kind of CNT Terahertz sensing model based on surface enhanced Raman scattering effect, is made up of CNT ball array and semiconductor base, and CNT ball array is located at semiconductor base materials surface, and array structure is linear array or annular array;The CNT radius of a ball is 0.1 300 microns, and the surface distance of ball and ball is 1 100 nanometers;Semiconductor base is any semi-conducting material that dielectric constant is 4 20;The side of terahertz electromagnetic wave from sensing model is incident, when the incident frequencies of terahertz electromagnetic wave and the close plasmon resonant frequency of sensing model, produces the enhancing of highest plasma local electric field.It is an advantage of the invention that:The CNT Terahertz sensing model, increases the contact area of binding molecule, sensitivity is high, testing cost is low;It is incidence wave using THz wave, target thing to be checked is obtained scope wider, biocompatibility more preferably, have wider application on lossless detection, medical treatment detection.
Description
Technical field
It is particularly a kind of the present invention relates to nano material and Terahertz frequency range SERS field of sensing technologies
CNT Terahertz sensing model based on surface enhanced Raman scattering effect.
Technical background
CNT is made up of the carbon atom of hexagonal arrangement, can be regarded as the knot crimped by mono-layer graphite
Structure simply thinks tubular nanometer material.Due to its lightweight, perfect hexagonal structure and with many excellent power
Learn, electricity and chemical property and extensively by concern both domestic and external.With the further investigation of CNT and nano material, before it is applied
Scape also becomes more and more extensive.Each attribute of CNT according to the number of plies of graphite flake layer, the diameter of pipe, helicity and
It is different.
THz wave refers to electromagnetic wave of the frequency in 0.1THz-10THz, between millimeter wave and infrared ray.Terahertz
Technology has far-reaching in numerous areas such as the communication technology, radar detection, material science, medical imaging, Non-Destructive Testing, safety inspections
Influence.Due to the high-frequency of Terahertz, very high spatial resolution is made it have;Again due to its short pulse, make it have
Very high temporal resolution.THz imaging technology and THz wave spectral technology thus constitute two of Terahertz application mainly
Key technology.It is prior, because the vibration of large biological molecule and the resonant frequency of rotational frequency are in terahertz wave band, in addition
Terahertz energy very little, will not produce destruction, so compared with X-ray, Terahertz Technology is applied lossless to material
In detection, there is more preferable application prospect in the field such as safety inspection.
Surface Enhanced Raman scattering refers to, when macromolecules adsorption is in textured metal or semiconductor surface, magnetic be powered up outside
Under the excitation of field, the enhanced phenomenon of raman spectral signal of macromolecular.Because the Raman spectrum of different material is different, by drawing
The extraction of graceful spectrum, effectively can be detected to material.But normal Raman signal is very weak, it is difficult to detect, and uses
Surface Enhanced Raman scattering technology amplifies signal, can greatly improve sensitivity and the accuracy of detection, it is sufficient to meet to list
The detection of Raman scattering of molecule signal.Therefore since the technology self-discovery, optical detection and material inspection have just been widely used in
In survey.
The research to SERS, CNT, Terahertz Technology has had remarkable progress both at home and abroad, still
The CNT THz devices of excellent performance are developed and developed, are current urgent problems.
The content of the invention
The present invention for above-mentioned problem there is provided a kind of sensitivity is high, cost is low and bio-compatibility it is good based on
The CNT Terahertz sensing model of surface enhanced Raman scattering effect, Raman scattering enhancer can reach 106The order of magnitude.
Technical scheme:
A kind of CNT Terahertz sensing model based on surface enhanced Raman scattering effect, by CNT ball array
Constituted with semiconductor base, CNT ball array is located at semiconductor base materials surface, array structure is linear array or ring
Shape array;The CNT radius of a ball is 0.1-300 microns, and the surface distance of ball and ball is 1-100 nanometers;Semiconductor base is Jie
Electric constant is 4-20 any semi-conducting material;The side of terahertz electromagnetic wave from sensing model is incident, works as terahertz electromagnetic wave
Incident frequencies and sensing model plasmon resonant frequency it is close when, produce the enhancing of highest plasma local electric field.
The working mechanism of the present invention:
The model using the surface enhanced Raman scattering effect of material as principle, using incident light frequency and detection material etc. from
When daughter resonant frequency is close, the enhanced principle of highest plasma local electric field can be produced, makes the sensitivity of sensor big
Big to improve, terahertz electromagnetic wave side-irradiation can produce signal to noise ratio very high surface-enhanced Raman and dissipate on the surface of sensor
Penetrate signal.Load macromolecular sample to be measured on the surface of designed CNT Terahertz sensing model, THz wave is incident
When, when the plasmon resonant frequency of incident frequencies and sensing model is close, molecules detected resonance, the local electric field meeting of surrounding
Corresponding enhancing, that is, raman spectral signal are strengthened.By the corresponding enhanced Raman spectrum of detection, reach to macromolecular
The purpose of analyte detection to be measured.
It is an advantage of the invention that:
The CNT Terahertz sensing model, increases the contact area of binding molecule, its sensitivity more existing one
As sensor increase, compared to precious metal, CNT can reduce testing cost;It is incidence wave using THz wave,
Obtaining target thing to be checked, scope is wider, is adapted to the detection of more materials;CNT is combined with THz wave technology,
Sensor can be made to have more preferable biocompatibility, have wider application on lossless detection, medical treatment detection.
Brief description of the drawings
Fig. 1 is the CNT Terahertz sensing model structural representation of the surface enhanced Raman scattering effect
In figure:1. the terahertz electromagnetic wave of 2. CNT ball array of semiconductor base 3.
Fig. 2 is the CNT radius of a ball when being 100um, different ball surfaces apart from when SERS enhancing because
Sub- curve map.
Fig. 3 is the 3 d effect graph of SERS electric-field enhancing.
Embodiment
It will be described in detail below by embodiment provided by the present invention a kind of based on surface enhanced Raman scattering effect
CNT Terahertz sensing model.But it will be appreciated by those skilled in the art that within the scope of the claims, it can do
The a variety of modifications gone out in formal and details.Therefore the present invention is not restricted to embodiments discussed below.
Embodiment:
A kind of CNT Terahertz sensing model based on surface enhanced Raman scattering effect, as shown in figure 1, being received by carbon
Mitron ball array 2 and semiconductor base 1 are constituted, and CNT ball array 2 is located at the material surface of semiconductor base 1, array structure
For linear array or annular array;The CNT radius of a ball is 100 microns, and the surface distance of ball and ball is 9.5 nanometers;Semiconductor
Substrate 1 is the alundum (Al2O3) that dielectric constant is 4.9.The side of terahertz electromagnetic wave 3 from sensing model is incident, when Terahertz electricity
When the incident frequencies of magnetic wave 3 and the close plasmon resonant frequency of sensing model, produce highest plasma local electric field and increase
By force.
The FDTD Solutions software for calculation using time-domain finite difference as principle is utilized to above-mentioned designed reality
Test model and carry out numerical simulation, the change of local electric field intensity is solved under PML boundary conditions (anisotropy perfect domination set).
In order to calculate simplicity, only calculated with two CNT spherical models.Incident terahertz electromagnetic wave frequency range exists
0.1THz-10THz.Simulation result shows, when incident wave frequency rate for 0.8THz is that the local electric field enhancing of model can reach most
It is big by 106The order of magnitude.
Fig. 2 is the CNT radius of a ball when being 100um, different ball surfaces apart from when SERS enhancing because
Show in sub- curve map, figure:When ball surface distance is 9.5nm, enhancer is up to 1.5 × 106。
Fig. 3 is the 3 d effect graph of SERS electric-field enhancing, i.e., according to the enhanced meter of model local electric field
Calculate and show in result, the 3 d effect graph gone out by MATLAB Software on Drawing, figure:Maximum enhancing is 1.5 × 106, maximum enhancing
Position in the centre of two CNT balls.That is, when macromolecular determinand is located at herein, being just readily available detection
Device captures raman spectral signal, so as to carry out the discriminating and imaging of material.
Claims (1)
1. a kind of CNT Terahertz sensing model based on surface enhanced Raman scattering effect, it is characterised in that:Received by carbon
Mitron ball array and semiconductor base are constituted, and CNT ball array is located at semiconductor base materials surface, and array structure is line
Type array or annular array;The CNT radius of a ball is 0.1-300 microns, and the surface distance of ball and ball is 1-100 nanometers;Partly lead
Body substrate is any semi-conducting material that dielectric constant is 4-20;The side of terahertz electromagnetic wave from sensing model is incident, when too
When the incident frequencies of hertz electromagnetic wave and the close plasmon resonant frequency of sensing model, highest plasma local electricity is produced
Field enhancing.
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US10340459B2 (en) * | 2016-03-22 | 2019-07-02 | International Business Machines Corporation | Terahertz detection and spectroscopy with films of homogeneous carbon nanotubes |
US10209186B2 (en) | 2017-01-03 | 2019-02-19 | International Business Machines Corporation | Chemical sensing based on plasmon resonance in carbon nanotubes |
CN110132881B (en) * | 2019-02-02 | 2020-01-21 | 中国人民解放军陆军军医大学第一附属医院 | Multispectral nano array chip integrating terahertz spectrum and Raman spectrum and application |
CN113820292B (en) * | 2021-08-24 | 2024-02-27 | 西安理工大学 | Flexible terahertz metamaterial sensor based on carbon nanotube film |
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CN101865847A (en) * | 2010-06-18 | 2010-10-20 | 清华大学 | Preparation method of Raman scattering substrate |
CN102323248A (en) * | 2011-08-12 | 2012-01-18 | 华北水利水电学院 | Application of carbon nanotube/silicon nested array as active substrate with surface enhanced Raman scattering effect |
CN102530828A (en) * | 2012-01-09 | 2012-07-04 | 重庆大学 | Surface-enhanced Raman scattering active substrate based on carbon nanometer pipe arrays and metal nanometer particles |
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CN101865847A (en) * | 2010-06-18 | 2010-10-20 | 清华大学 | Preparation method of Raman scattering substrate |
CN102323248A (en) * | 2011-08-12 | 2012-01-18 | 华北水利水电学院 | Application of carbon nanotube/silicon nested array as active substrate with surface enhanced Raman scattering effect |
CN102530828A (en) * | 2012-01-09 | 2012-07-04 | 重庆大学 | Surface-enhanced Raman scattering active substrate based on carbon nanometer pipe arrays and metal nanometer particles |
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Surface-enhanced Raman scattering effects of gold and InSb nanoparticles at THz frequencies;Yong Ming Zhang et al;《Optics Communications》;20141212;第341卷;第173-177页 * |
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