CN104752584A - LED packaging structure - Google Patents
LED packaging structure Download PDFInfo
- Publication number
- CN104752584A CN104752584A CN201310756938.1A CN201310756938A CN104752584A CN 104752584 A CN104752584 A CN 104752584A CN 201310756938 A CN201310756938 A CN 201310756938A CN 104752584 A CN104752584 A CN 104752584A
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- China
- Prior art keywords
- silicon substrate
- substrate carrier
- led
- die cavity
- electrode
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004806 packaging method and process Methods 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 69
- 239000010410 layer Substances 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000003292 glue Substances 0.000 claims abstract description 22
- 239000011521 glass Substances 0.000 claims abstract description 20
- 238000005538 encapsulation Methods 0.000 claims description 34
- 239000011241 protective layer Substances 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000002994 raw material Substances 0.000 abstract description 3
- 239000012790 adhesive layer Substances 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 235000019994 cava Nutrition 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides an LED packaging structure. The LED packaging structure comprises a silicon based carrier in which a cavity is formed; a glass substrate is arranged on the silicon based carrier; an LED chip is arranged in the cavity of the silicon based carrier; the glass substrate is connected with the side edge of the silicon based carrier, and the connecting part is sealed and connected through an adhesive layer; the cavity of the silicon based carrier is hollow; a reflecting layer is arranged on the sidewall of the cavity; the LED chip is adhered to the bottom part of the cavity in the silicon based carrier; a first electrode and a second electrode of the LED chip are exported from the bottom part of the cavity in the silicon based carrier through wire distributing metal layers. According to the LED packaging structure, the mode above is utilized to pack, the cavity is free of filling glue, the glass substrate is in sealing connection with the side edge of the silicon based carrier, and therefore, the raw materials can be saved; in addition, the problem that the lighting performance of an LED is reduced due to the light absorbing of the filling glue in the prior art can be avoided; the lighting efficiency of the LED can be increased, the energy utilization rate is increased, and the cost can be saved.
Description
Technical field
The present invention relates to a kind of encapsulating structure, specifically the encapsulating structure of a kind of LED.
Background technology
Light-emitting diode (English: Light-Emitting Diode is called for short LED) is a kind of can be the solid-state semiconductor device of visible ray by electric energy conversion, and it is widely used in the field such as illumination, LCD backlight plate, control panel, flasher.Light-emitting diode is the one of semiconductor diode, electric energy conversion can be become luminous energy.Light-emitting diode is the same with general-purpose diode to be made up of a PN junction, also has unilateral conduction.After adding forward voltage to light-emitting diode, be injected into the hole in N district from P district and be injected into the electronics in P district by N district, near PN junction in several microns respectively with the electronics in N district and the hole-recombination in P district, produce the fluorescence of spontaneous radiation.In different semi-conducting materials, electronics is different with the energy state residing for hole.The amount discharged when electronics and hole-recombination is different, and the energy discharged is more, then the wavelength of the light sent is shorter.Conventional is glows, the diode of green glow or gold-tinted.
LED (light-emitting diode) encapsulation refers to the encapsulation of luminescence chip, and this integrated antenna package has relatively big difference mutually.The encapsulation of LED not only requirement can protect wick, but also can printing opacity.So the encapsulation of LED has special requirement to encapsulating material.Conventional Φ 5mm type LED is by the square die attach of length of side 0.25mm or sinters on lead frame, the positive pole of tube core is by ball contact point and spun gold, bonding is that lead is connected with a pin, negative pole is connected with another pin of lead frame by reflector, and then its top is with epoxy resin enclosed.
Also a kind of wafer level LED encapsulation structure is disclosed in Chinese patent literature CN102832330A, comprise LED chip, silicon substrate carrier and filling glue, LED chip comprises chip body, electrode is provided with at chip body upper surface, described electrode comprises electrode I and electrode II, the top of silicon substrate carrier is provided with glass, the front of silicon substrate carrier is provided with recessed die cavity, the back side is provided with silicon isolated island, the two ends that described silicon isolated island strides across die cavity are connected with silicon substrate carrier, described LED chip is connected with the silicon isolated island in die cavity by connecting glue, described glass is connected by filling glue with silicon substrate carrier, and fill glue and fill full die cavity inside.Be provided with reflector layer at the upper surface of mold cavity surface and silicon substrate carrier, promote LED light extraction efficiency by this reflector layer.The below of described silicon substrate carrier is provided with photosensitive resin layer and metal level, described photosensitive resin layer comprises photosensitive resin layer I and photosensitive resin layer II, described photosensitive resin layer I covers the lower surface of silicon substrate carrier, in island structure, its height flushes with silicon isolated island, described metal level comprises interconnection metal layer and metal derby again, described metal derby is arranged on the lower surface of silicon isolated island, described interconnection metal layer is again connected with electrode I, electrode II, described photosensitive resin layer II covers on the metal layer, and is provided with several photosensitive resin opening.In the present embodiment, be all filled with filling glue in whole die cavity inside, have certain absorption owing to filling glue to light, therefore this filling glue can affect luminescent properties, the raising energy consumption of LED.
Summary of the invention
For this reason, technical problem to be solved by this invention is to be full of filling glue in prior art in LED encapsulation structure in die cavity, to affect LED luminescent properties, thus proposes a kind of LED encapsulation structure that improve LED luminescent properties.
For solving the problems of the technologies described above, of the present inventionly provide a kind of LED encapsulation structure, comprise the silicon substrate carrier forming a die cavity, described silicon substrate carrier is provided with glass substrate, LED chip is provided with in the die cavity of described silicon substrate carrier, the edge conjunction of described glass substrate and described silicon substrate carrier, be tightly connected by glue line at this link position, hollow in the die cavity of described silicon substrate carrier, the sidewall of described die cavity is provided with reflector layer, described LED chip is pasted onto the bottom of the die cavity of described silicon substrate carrier, first electrode of described LED chip and the second electrode are drawn by the bottom of interconnection metal layer from the die cavity of described silicon substrate carrier.
Described LED encapsulation structure, the shape that the section of the die cavity of described silicon substrate carrier is big up and small down.
Described LED encapsulation structure, the section of the die cavity of described silicon substrate carrier is inverted trapezoidal.
Described LED encapsulation structure, has encapsulated layer in the outer setting of described silicon substrate carrier.
Described LED encapsulation structure, described interconnection metal layer comprises interconnective electrode connecting end and wiring elongated end, described electrode connecting end is by the first electrode of preformed hole and described LED chip or the second Electrode connection, and described wiring elongated end extends along described encapsulated layer.
Described LED encapsulation structure, the outer surface of described encapsulated layer or described interconnection metal layer is also provided with anti-welding protective layer.
Described LED encapsulation structure, the surface of described glass substrate towards the side of described silicon substrate carrier is provided with phosphor layer.
Described LED encapsulation structure, described LED chip is bonded in the bottom of the die cavity of described silicon substrate carrier by tack coat.
Technique scheme of the present invention mutually this prior art has the following advantages,
(1) the invention provides a kind of LED encapsulation structure, comprise the silicon substrate carrier forming a die cavity, described silicon substrate carrier is provided with glass substrate, LED chip is provided with in the die cavity of described silicon substrate carrier, the edge conjunction of described glass substrate and described silicon substrate carrier, be tightly connected by glue line at this link position, hollow in the die cavity of described silicon substrate carrier, the sidewall of described die cavity is provided with reflector layer, described LED chip is pasted onto the bottom of the die cavity of described silicon substrate carrier, first electrode of described LED chip and the second electrode are drawn by the bottom of interconnection metal layer from the die cavity of described silicon substrate carrier, encapsulated by which, owing to not needing to fill glue in described die cavity, described glass substrate is only needed to be connected with the edge seal of described silicon substrate carrier, not only save raw material, and avoid in prior art owing to filling the problem that the absorption of glue to light causes the luminescent properties of LED to decline, improve the luminous efficiency of LED, improve the utilance of the energy, save cost.
(2) LED encapsulation structure of the present invention, the shape that the section of the die cavity of described silicon substrate carrier is big up and small down, section as the die cavity of silicon substrate carrier is inverted trapezoidal, by up big and down small cavity design, more convenient when not only making described LED install, and the sidewall making it be formed has larger area and reflective function, make the reflector layer be arranged on sidewall have better reflective function, improve the luminous efficiency of LED further.
(3) LED encapsulation structure of the present invention; encapsulated layer is had in the outer setting of described silicon substrate carrier; and be also provided with anti-welding protective layer at the outer surface of described encapsulated layer or described interconnection metal layer; improve safety and the barrier properties of described LED encapsulation structure, play the effect of insulation and protection.
(4) LED encapsulation structure of the present invention, described interconnection metal layer comprises interconnective electrode connecting end and wiring elongated end, described electrode connecting end is by the first electrode of preformed hole and described LED chip or the second Electrode connection, described wiring elongated end extends along described encapsulated layer, like this by described interconnection metal layer, first electrode of described LED chip and the second electrode are drawn respectively, makes it be drawn out to suitable position, facilitate follow-up connection and use.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is the structure chart of an embodiment of LED encapsulation structure of the present invention;
Fig. 2 is the structure chart of another embodiment of LED encapsulation structure of the present invention.
In figure, Reference numeral is expressed as: 1-silicon substrate carrier, 2-die cavity, 3-glass substrate; 4-LED chip, 5-glue line, 6-reflector layer; 7-first electrode, 8-second electrode, 9,10-interconnection metal layer; 91-electrode connecting end; 92-connects up elongated end, 11-encapsulated layer, the anti-welding protective layer of 12-; 13-phosphor layer, 14-tack coat.
Embodiment
Embodiment 1:
Of the present inventionly provide a kind of LED encapsulation structure, comprise the silicon substrate carrier 1 forming a die cavity 2, this die cavity 2 is positioned at the center of described silicon substrate carrier 1, is the disk of the hollow that one caves inward.Described silicon substrate carrier 2 is provided with glass substrate 3, and the edge conjunction of described glass substrate 3 and described silicon substrate carrier 1, is tightly connected by glue line 5 at this link position.Make to be tightly connected between glass substrate 3 and silicon substrate carrier 1 by glue line 5, ensure that described die cavity 2 inside and exterior insulation.Die cavity 2 inner hollow of silicon substrate carrier 1, without the need to filling the materials such as filling glue of the prior art, having been achieved by the glue line 5 of its edge conjunction position and being tightly connected.The sidewall of described die cavity 2 is provided with reflector layer 6, and this reflector layer 6 contributes to promoting LED light extraction efficiency.LED chip 4 is pasted onto the bottom of the die cavity 2 of described silicon substrate carrier 1 by tack coat 14, and be reserved with preformed hole in the bottom of this die cavity 2, for drawing the first electrode 7 and the second electrode 8, the first electrode 7 of described LED chip 4 and the second electrode 8 are drawn respectively by the bottom of interconnection metal layer 9,10 from the die cavity 2 of described silicon substrate carrier 1.
LED is carried out by which, owing to not needing to fill glue in described die cavity 2, described glass substrate 3 is only needed to be connected with the edge seal of described silicon substrate carrier 2, not only save raw material, and avoid in prior art owing to filling the problem that the absorption of glue to light causes the luminescent properties of LED to decline, improve the luminous efficiency of LED, improve the utilance of the energy, save cost.
As the execution mode that can replace, the shape that the section of the die cavity 2 of described silicon substrate carrier 1 can be big up and small down, as inverted trapezoidal or lead arc etc.By up big and down small cavity design, more convenient when not only making described LED install, and the sidewall making it be formed has larger area and reflective function, make the reflector layer 6 be arranged on sidewall have better reflective function, improve the luminous efficiency of LED further
Embodiment 2:
LED encapsulation structure in the present embodiment, on the basis of the LED structure described in embodiment 1, encapsulated layer 11 is had in the outer setting of described silicon substrate carrier 1, and described interconnection metal layer 9 is set to there is interconnective electrode connecting end 91 and wiring elongated end 92, described electrode connecting end 91 is connected with the first electrode 7 of described LED chip by preformed hole, and described wiring elongated end 92 extends along described encapsulated layer 11.Like this by described interconnection metal layer 9,10, the first electrode 7 of described LED chip and the second electrode 8 are drawn respectively, makes it be drawn out to suitable position, facilitate follow-up connection and use.In the present embodiment; except the outer setting at described silicon substrate carrier 1 has encapsulated layer 11; also be provided with anti-welding protective layer 12 at the outer surface of described encapsulated layer 11 or described interconnection metal layer 9,10, improve safety and the barrier properties of described LED encapsulation structure further, play the effect of insulation and protection.
As further execution mode, the surface of described glass substrate 3 towards the side of described silicon substrate carrier 1 can also arrange phosphor layer 13, coordinate fluorescer and LED chip, realize the Presentation Function of the LED of different colours different-effect, as shown in Figure 2.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among the protection range of the invention.
Claims (8)
1. a LED encapsulation structure, comprise the silicon substrate carrier forming a die cavity, described silicon substrate carrier is provided with glass substrate, LED chip is provided with in the die cavity of described silicon substrate carrier, it is characterized in that: the edge conjunction of described glass substrate and described silicon substrate carrier, be tightly connected by glue line at this link position, hollow in the die cavity of described silicon substrate carrier, the sidewall of described die cavity is provided with reflector layer, described LED chip is pasted onto the bottom of the die cavity of described silicon substrate carrier, first electrode of described LED chip and the second electrode are drawn by the bottom of interconnection metal layer from the die cavity of described silicon substrate carrier.
2. LED encapsulation structure according to claim 1, is characterized in that, the shape that the section of the die cavity of described silicon substrate carrier is big up and small down.
3. LED encapsulation structure according to claim 1 and 2, is characterized in that, the section of the die cavity of described silicon substrate carrier is inverted trapezoidal.
4. LED encapsulation structure according to claim 1 and 2, is characterized in that, has encapsulated layer in the outer setting of described silicon substrate carrier.
5. LED encapsulation structure according to claim 4, it is characterized in that, described interconnection metal layer comprises interconnective electrode connecting end and wiring elongated end, described electrode connecting end is by the first electrode of preformed hole and described LED chip or the second Electrode connection, and described wiring elongated end extends along described encapsulated layer.
6. LED encapsulation structure according to claim 5, is characterized in that, the outer surface of described encapsulated layer or described interconnection metal layer is also provided with anti-welding protective layer.
7. LED encapsulation structure according to claim 6, is characterized in that, the surface of described glass substrate towards the side of described silicon substrate carrier is provided with phosphor layer.
8. LED encapsulation structure according to claim 6, is characterized in that, described LED chip is bonded in the bottom of the die cavity of described silicon substrate carrier by tack coat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310756938.1A CN104752584A (en) | 2013-12-25 | 2013-12-25 | LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310756938.1A CN104752584A (en) | 2013-12-25 | 2013-12-25 | LED packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104752584A true CN104752584A (en) | 2015-07-01 |
Family
ID=53591967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310756938.1A Pending CN104752584A (en) | 2013-12-25 | 2013-12-25 | LED packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104752584A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107833903A (en) * | 2016-09-15 | 2018-03-23 | 伊乐视有限公司 | Active display with light management system |
| CN110265525A (en) * | 2019-05-17 | 2019-09-20 | 深圳市兆驰节能照明股份有限公司 | Blue-ray LED encapsulating structure, backlight module and display equipment |
| CN110311019A (en) * | 2018-03-20 | 2019-10-08 | 普因特工程有限公司 | Optical element substrate and its manufacturing method and element package body and its manufacturing method |
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| CN203733833U (en) * | 2013-12-25 | 2014-07-23 | 苏州矩阵光电有限公司 | LED packaging structure |
-
2013
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| JP2005327820A (en) * | 2004-05-12 | 2005-11-24 | Matsushita Electric Works Ltd | Package for light emitting diode, light emitting device employing same and manufacturing method of the light emitting device |
| US20070161211A1 (en) * | 2006-01-06 | 2007-07-12 | Masahiro Sunohara | Method for manufacturing semiconductor device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107833903A (en) * | 2016-09-15 | 2018-03-23 | 伊乐视有限公司 | Active display with light management system |
| CN110311019A (en) * | 2018-03-20 | 2019-10-08 | 普因特工程有限公司 | Optical element substrate and its manufacturing method and element package body and its manufacturing method |
| CN110265525A (en) * | 2019-05-17 | 2019-09-20 | 深圳市兆驰节能照明股份有限公司 | Blue-ray LED encapsulating structure, backlight module and display equipment |
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