CN104752429A

CN104752429A - Insulator-on-silicon (SOI) radio-frequency device structure

Info

Publication number: CN104752429A
Application number: CN201510189276.3A
Authority: CN
Inventors: 刘张李
Original assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corp
Current assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corp
Priority date: 2015-04-17
Filing date: 2015-04-17
Publication date: 2015-07-01
Anticipated expiration: 2035-04-17
Also published as: CN104752429B

Abstract

The invention provides an insulator-on-silicon (SOI) radio-frequency device structure which comprises a buried oxide layer serving as an insulating layer, a device region arranged on the buried oxide layer and a body region. A channel region, a source electrode region and a drain electrode region are formed in the device region, a gate oxide layer and gate polysilicon are sequentially arranged on the channel region, a silicon layer in the body region is integrally connected with the channel region, and a polysilicon connection area integrally connected with the gate polysilicon formed on the silicon layer in the body region.

Description

Silicon-on-insulator RF switching devices structure

Technical field

The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of silicon-on-insulator RF switching devices structure.

Background technology

Silicon materials are the most widely used main raw material(s)s of semicon industry, and most of chip all manufactures with silicon chip.Silicon-on-insulator (SOI, Silicon-on-insulator) be a kind of special silicon chip, the main feature of its structure between active layer and substrate layer, inserts insulating barrier (buried oxide layer) cut off electrical connection between active layer and substrate, and this design feature is that the device of silicon-on-insulator class brings the plurality of advantages such as ghost effect is little, speed is fast, low in energy consumption, integrated level is high, capability of resistance to radiation is strong.

Now, adopted soi process to manufacture switching device.In general, for concrete applications of electronic circuitry, the linearity is an important indicator of silicon-on-insulator RF switching devices.But for some application-specific, the linearity of existing silicon-on-insulator RF switching devices can't meet the demands.Therefore, expect to provide a kind of device architecture that effectively can improve the linearity of silicon-on-insulator RF switching devices.

Summary of the invention

Technical problem to be solved by this invention is for there is above-mentioned defect in prior art, provides a kind of device architecture that effectively can improve the linearity of silicon-on-insulator RF switching devices.

In order to realize above-mentioned technical purpose, according to the present invention, providing a kind of silicon-on-insulator RF switching devices structure, comprising: as the buried oxide layer of insulating barrier and the device region be arranged in buried oxide layer and tagma; Wherein, in device region, channel region, source area and drain region is formed with; And, channel region is furnished with grid oxic horizon and grid polycrystalline silicon successively; Silicon layer in tagma is connected with channel region, and silicon layer in tagma is formed with the polysilicon bonding pad be connected with grid polycrystalline silicon.

Preferably, grid polycrystalline silicon and polysilicon bonding pad have the first doping type; Channel region and silicon layer have the second doping type, define backward diode thus between polysilicon bonding pad and silicon layer.

Preferably, polysilicon bonding pad connects grid polycrystalline silicon, and connects the silicon layer as tagma.

Preferably, backward diode is defined between the grid polycrystalline silicon of silicon RF switching devices and tagma on insulator.

Preferably, the first doping type is N-type doping, and the second doping type is the doping of P type; Or the first doping type is the doping of P type, the second doping type is N-type doping.

Preferably, wherein, buried oxide layer is arranged in silicon substrate layer.

Preferably, source area is connected to source metal wiring by through hole.

Preferably, drain region is connected to drain metal wiring by through hole.

Preferably, grid polycrystalline silicon is connected to gate metal wiring by through hole.

In the present invention, backward diode is defined between polysilicon bonding pad and silicon layer, because polysilicon not only connects grid polycrystalline silicon in bonding pad, and connect as the silicon layer in tagma, so define backward diode between the grid of silicon RF switching devices and tagma in fact on insulator; Thus, due to the formation of the backward diode between the grid of silicon-on-insulator RF switching devices and tagma, effectively improve the linearity of silicon-on-insulator RF switching devices.

Accompanying drawing explanation

By reference to the accompanying drawings, and by reference to detailed description below, will more easily there is more complete understanding to the present invention and more easily understand its adjoint advantage and feature, wherein:

Fig. 1 schematically shows the vertical view of silicon-on-insulator RF switching devices structure according to the preferred embodiment of the invention.

Fig. 2 schematically show according to the preferred embodiment of the invention silicon-on-insulator RF switching devices structure along the schematic cross-section of the line A-A ' of Fig. 1.

Fig. 3 schematically show according to the preferred embodiment of the invention silicon-on-insulator RF switching devices structure along the schematic cross-section of the line B-B ' of Fig. 1.

It should be noted that, accompanying drawing is for illustration of the present invention, and unrestricted the present invention.Note, represent that the accompanying drawing of structure may not be draw in proportion.Further, in accompanying drawing, identical or similar element indicates identical or similar label.

Embodiment

In order to make content of the present invention clearly with understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.

Fig. 1 schematically shows the vertical view of silicon-on-insulator RF switching devices structure according to the preferred embodiment of the invention.Fig. 2 schematically show according to the preferred embodiment of the invention silicon-on-insulator RF switching devices structure along the schematic cross-section of the line A-A ' of Fig. 1.Fig. 3 schematically show according to the preferred embodiment of the invention silicon-on-insulator RF switching devices structure along the schematic cross-section (for the sake of clarity eliminating part upper metal syndeton in Fig. 3) of the line B-B ' of Fig. 1.

As shown in Figure 1, Figure 2 and Figure 3, silicon-on-insulator RF switching devices structure comprises according to the preferred embodiment of the invention: as insulating barrier buried oxide layer 60, be arranged in device region 100 in buried oxide layer 60 and tagma 200.

Wherein, in device region 100, channel region 30, source area 31 and drain region 32 is formed with; And, wherein, channel region 30 is furnished with successively grid oxic horizon 41 and grid polycrystalline silicon 10.

In tagma 200, silicon layer 33 is connected with channel region 30, and silicon layer 33 in tagma 200 is formed with the polysilicon bonding pad 11 that to be connected with grid polycrystalline silicon 10.

And grid polycrystalline silicon 10 and polysilicon bonding pad 11 have the first doping type, such as N-type doping (N-type heavy doping); Channel region 30 and silicon layer 33 have the second doping type, such as P type doping (heavy doping of P type).

Thus, as shown in Figure 2, backward diode (as shown in the diode that dotted line draws) is defined between polysilicon bonding pad 11 and silicon layer 33, connect grid polycrystalline silicon 10 due to polysilicon bonding pad 11 and connect as the silicon layer 33 in tagma, so define backward diode between the grid of silicon RF switching devices and tagma in fact on insulator.Thus, due to the formation of the backward diode between the grid of silicon-on-insulator RF switching devices and tagma, effectively improve the linearity of silicon-on-insulator RF switching devices.

Further, particularly, silicon layer 33, channel region 30, source area 31 and drain region 32 are isolated district 50 and surround, to separate with other device.

Wherein, particularly, such as, isolated area 50 be such as shallow trench isolation from.

Wherein, particularly, as shown in Figures 2 and 3, buried oxide layer 60 is arranged in silicon substrate layer 70.Wherein silicon substrate layer 70 provides mechanical support for the device architecture in buried oxide layer 60 above and buried oxide layer 60.

And, it is to be appreciated that in other embodiments, the first doping type be P type doping and also the second doping type be N-type doping situation be also feasible.

And such as, source area 31 is connected to source metal wiring 22 by through hole, and drain region 32 is connected to drain metal wiring 23 by through hole, and grid polycrystalline silicon 10 is connected to gate metal wiring 21 by through hole.

In addition, it should be noted that, unless stated otherwise or point out, otherwise the term " first " in specification, " second ", " the 3rd " etc. describe only for distinguishing each assembly, element, step etc. in specification, instead of for representing logical relation between each assembly, element, step or ordinal relation etc.

Be understandable that, although the present invention with preferred embodiment disclose as above, but above-described embodiment and be not used to limit the present invention.For any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the technology contents of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.

Claims

1. a silicon-on-insulator RF switching devices structure, is characterized in that comprising: as the buried oxide layer of insulating barrier and the device region be arranged in buried oxide layer and tagma; Wherein, in device region, channel region, source area and drain region is formed with; And, channel region is furnished with grid oxic horizon and grid polycrystalline silicon successively; Silicon layer in tagma is connected with channel region, and silicon layer in tagma is formed with the polysilicon bonding pad be connected with grid polycrystalline silicon.

2. silicon-on-insulator RF switching devices structure according to claim 1, is characterized in that, grid polycrystalline silicon and polysilicon bonding pad have the first doping type; Channel region and silicon layer have the second doping type, define backward diode thus between polysilicon bonding pad and silicon layer.

3. silicon-on-insulator RF switching devices structure according to claim 2, is characterized in that, polysilicon bonding pad connects grid polycrystalline silicon, and connects the silicon layer as tagma.

4. silicon-on-insulator RF switching devices structure according to claim 3, is characterized in that, defines backward diode on insulator between the grid polycrystalline silicon of silicon RF switching devices and tagma.

5. silicon-on-insulator RF switching devices structure according to claim 1 and 2, is characterized in that, the first doping type is N-type doping, and the second doping type is the doping of P type; Or the first doping type is the doping of P type, the second doping type is N-type doping.

6. silicon-on-insulator RF switching devices structure according to claim 1 and 2, it is characterized in that, wherein, buried oxide layer is arranged in silicon substrate layer.

7. silicon-on-insulator RF switching devices structure according to claim 1 and 2, is characterized in that, source area is connected to source metal wiring by through hole.

8. silicon-on-insulator RF switching devices structure according to claim 1 and 2, is characterized in that, drain region is connected to drain metal wiring by through hole.

9. silicon-on-insulator RF switching devices structure according to claim 1 and 2, is characterized in that, grid polycrystalline silicon is connected to gate metal wiring by through hole.