CN104752282B - A kind of sample processing device and treatment process for micro-nano device making - Google Patents
A kind of sample processing device and treatment process for micro-nano device making Download PDFInfo
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- CN104752282B CN104752282B CN201510089590.4A CN201510089590A CN104752282B CN 104752282 B CN104752282 B CN 104752282B CN 201510089590 A CN201510089590 A CN 201510089590A CN 104752282 B CN104752282 B CN 104752282B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sampling And Sample Adjustment (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
The present invention provides a kind of sample processing device made for micro-nano device, include washing aobvious device and spin-drying device by what Teflon made, it is described wash aobvious device include chassis, the shadoof that is screwed on the chassis, the chassis is equipped with several rectangular recess and circular through hole, and the circular through hole is through to the rectangular recess bottom from the undersurface of bottom disc；Groove is equipped among the spin-drying device, surrounding is equipped with the toothed edge of hollow out；Additionally provide it is a kind of for micro-nano device make sample clean, development, rinse treatment process.The sample processing device of the present invention, holds micro-nano device for sample clean, development, rinse and drying process, sample is enable to obtain reliable and stable cleaning and drying；The present invention sample treatment technique, be remarkably improved sample clean, development, rinse efficiency, shorten micro-nano device fabrication cycle.
Description
Technical field
The present invention relates to produced by micro processing technical fields, and in particular to a kind of sample treatment dress made for micro-nano device
It sets and treatment process.
Background technology
Currently, in the produced by micro processing technique of monocrystalline silicon, silicon carbide, oxide layer substrate, glass substrate and ceramic substrate,
All foreign mediums being in contact with substrate all are the possibility sources that impurity is stained on substrate.This includes mainly the following aspects：
Pollution that pollution, reagent strip caused by pollution of substrate during machine-shaping, environmental pollution, water are come, industrial gasses cause
Pollution, pollute caused by pollution, human body caused by technique itself etc..In semiconductor devices production, substrate must be through stringent clear
It washes, otherwise its micropollution being stained with also results in component failure.The purpose of cleaning is the pollution impurity of removing substrate surface,
Including metal, organic matter and inorganic matter etc..These impurity with the presence of with state of atom or ionic condition, some is in the form of a film
Or particle form is present in substrate surface.The making of micro-nano device is the substrate to clean and obtain clean substrate as starting point
Cleaning be semiconductor devices manufacture in most important most frequent step, and its efficiency by directly influence device yield rate,
Performance And Reliability, this just proposes the high efficiency of cleaning and reliability very high requirement.Therefore, one kind is developed to exist
In micro-nano device manufacturing process, sample processing device and treatment process for programs such as micro-nano device cleaning, development, rinses
The need just to become a reality.
Invention content
The object of the present invention is to provide a kind of sample processing devices made for micro-nano device, for sample clean, show
Shadow, rinse and drying process hold micro-nano device, and sample is enable to obtain reliable and stable cleaning and drying.
In addition, another object of the present invention is to provide a kind of sample treatment technique made for micro-nano device, use is above-mentioned
Sample processing device, be remarkably improved sample clean, development, rinse efficiency, shorten micro-nano device fabrication cycle.
To achieve the goals above, the technical solution adopted by the present invention is as follows：
A kind of sample processing device made for micro-nano device includes being filled with drying by the aobvious device of washing that Teflon makes
Set, it is described wash aobvious device include chassis, the shadoof that is screwed on the chassis, the chassis is equipped with several squares
Connected in star and circular through hole, the circular through hole are through to the rectangular recess bottom from the undersurface of bottom disc；The drying dress
Set the intermediate toothed edge that hollow out is equipped with equipped with groove, surrounding.
According to above scheme, the width of the rectangular recess is less than the diameter of the circular through hole.
According to above scheme, the shadoof is detachable shadoof, and lower part is equipped with screw thread, in order to be installed on the chassis
On.
A kind of sample clean technique that micro-nano device makes, includes the following steps：
1) substrate (silicon chip) is cut into small pieces；
2) glass beaker of cleaning base plate and other device deionized waters are cleaned 4 times in Vltrasonic device, then will
The substrate cut is washed described in being loaded into aobvious device, is subsequently placed in the glass beaker cleaned；
3) ethanol in proper amount (being advisable not cross substrate) is injected into glass beaker, is placed in Vltrasonic device and is cleaned 1 minute, it
Ethyl alcohol is poured into returnable bottle afterwards, so repeats to be cleaned 4 times with ethyl alcohol；
4) suitable quantity of water is injected into glass beaker, is placed in Vltrasonic device and cleans 1 minute, then outwell water, so weight
It is 4 times multiple；
5) first inject appropriate hydrogen peroxide into glass beaker, reinject the appropriate concentrated sulfuric acid, it is ensured that hydrogen peroxide and the concentrated sulfuric acid it
Than being 1:2 (sum of the two there was not substrate a little) persistently impregnate 30 minutes, liquid are then poured into returnable bottle；
6) appropriate amount of deionized water is injected into glass beaker, then is poured into the devil liquor recovery bottle of sulfuric acid, is then used again
Deionized water is cleaned 4 times；
7) first inject suitable quantity of water into glass beaker, then successively inject appropriate hydrogen peroxide and ammonium hydroxide, it is ensured that water, hydrogen peroxide,
The ratio between ammonium hydroxide is 6:1:1 (the sum of three did not had substrate a little) is subsequently placed in 260 degrees Celsius of thermal station and heats, bubble production to be had
Start timing when raw, beaker is removed after 15 minutes, by devil liquor recovery；
8) glass beaker and substrate deionized water are cleaned 4 times in Vltrasonic device；
9) suitable quantity of water is injected into glass beaker, reinjects appropriate hydrogen peroxide, finally injects appropriate concentrated hydrochloric acid, it is ensured that dioxygen
The ratio between water and concentrated hydrochloric acid are 1:1 (ensuring that the sum of three can not have substrate a little), is subsequently placed in 260 degrees Celsius of thermal station and heats,
Start timing when having bubble generation, beaker is removed after 15 minutes, by devil liquor recovery；
10) above-mentioned glass beaker and sample are cleaned 4 times with deionized water in Vltrasonic device；
11) Teflon beaker is cleaned 4 times with deionized water, then substrate is transferred in Teflon beaker, noted thereto
Enter a concentration of 1% hydrofluoric acid to take out substrate after 15-20 seconds, hydrofluoric acid is poured into returnable bottle；Then moistened with deionized water
Teflon beaker and substrate 3 times are washed, each rinse liquid pours into hydrofluoric acid returnable bottle；Use deionized water in Vltrasonic device again
Clean Teflon beaker 4 times；
12) substrate in Teflon beaker is transferred in glass beaker, is cleaned in Vltrasonic device 4 times with deionized water；
13) substrate is lain in for the spin-drying device, dries substrate under the drive of external impetus, in order to
Next drying operation.
A kind of sample development that micro-nano device makes, rinse technique, include the following steps：
1) it is ready to have been carried out the micro-nano device sample of ultraviolet photolithographic；
2) it will be cleaned in Vltrasonic device 4 times for the beaker of sample development and rinse and other device deionized waters,
Again by the sample for having been carried out ultraviolet photolithographic be loaded into it is described wash aobvious device after, then be placed in the beaker for development cleaned
In；
3) appropriate developer solution (developer solution did not had substrate a little) is injected into the beaker for development, is persistently impregnated 50 seconds,
The shadoof for washing aobvious device described in control in soaking process, makes it shake up and down, so as to make sample fully be connect with reagent
It touches, developer solution is then poured into returnable bottle；
4) it will be mounted with and wash aobvious device described in sample and be transferred in the beaker for rinse, and inject appropriate deionization
Water persistently impregnates 30 seconds, washes the shadoof of aobvious device described in control in soaking process, so that it is shaken up and down, so as to make
Sample comes into full contact with deionized water, and deionized water is then poured into returnable bottle；
5) above-mentioned each beaker deionized water is cleaned 4 times in Vltrasonic device；
6) will develop, the sample of rinse transfer lie against on the spin-drying device, by sample under the drive of external impetus
Product dry, in order to next drying operation.
The beneficial effects of the invention are as follows：
1) width of rectangular recess of the invention is less than the diameter of the circular through hole, may make sample convenient for picking and placeing and energy
Enough to be fully infiltrated in liquid, when sample leaves liquid, the liquid speckled in device can be flowed into beaker rapidly；
2) the hollow out toothed edge of spin-drying device of the invention, can not only prevent sample to be thrown out of at high speed, but also can
Substrate is set to be not smeared with liquid in order to next drying operation to throw away residual liquid on sample；
3) present invention is made by Teflon, has the function of anti-strong acid corrosion, it is ensured that cleaning micro-nano device with strong acid
It is unlikely to be corroded when part；
4) sample treatment technique of the invention includes cleaning, development, rinse technique, applies the sample treatment of the present invention
Device can very easily fix sample, be suitable for various sizes sample, entire processing procedure high efficient and reliable, it is easy to use,
Strong operability can be that subsequent element manufacturing is laid a good foundation.
Description of the drawings
Fig. 1 is the main structure diagram for washing aobvious device of the embodiment of the present invention 1；
Fig. 2 is the overlooking structure diagram for washing aobvious device of the embodiment of the present invention 1；
Fig. 3 is the overlooking structure diagram of the spin-drying device of the embodiment of the present invention 1；
Fig. 4 is the main structure diagram for washing aobvious device of the embodiment of the present invention 2；
Fig. 5 is the overlooking structure diagram for washing aobvious device of the embodiment of the present invention 2.
In figure：11, chassis；12, shadoof；13, rectangular recess；14, circular through hole；21, groove；22, toothed edge.
Specific implementation mode
Technical scheme of the present invention is illustrated with embodiment below in conjunction with the accompanying drawings.
Embodiment 1, is shown in shown in Fig. 1 to Fig. 3：
The present invention provides a kind of sample processing device made for micro-nano device, includes washing aobvious dress by what Teflon made
1 and spin-drying device 2 are set, the aobvious device 1 of washing includes chassis 11, the shadoof 12 being screwed on the chassis, described
Shadoof 12 is fixed on the center on the chassis 11, and the chassis 11 is equipped with several rectangular recess 13 and circular through hole 14, described
Circular through hole 14 is through to 13 bottom of the rectangular recess from 11 bottom surface of the chassis；Groove is equipped among the spin-drying device 2
21, the toothed edge 22 of hollow out is equipped with around.
Preferably, the wide diameter less than the circular through hole 14 of the rectangular recess 13.
Preferably, the shadoof 12 is detachable shadoof, and lower part is equipped with screw thread.
The present invention also provides the sample clean techniques that a kind of micro-nano device makes, and include the following steps：
1) silicon substrate is cut into the square that the length of side is 2cm；
2) glass beaker of cleaning base plate and other device deionized waters are cleaned 4 times in Vltrasonic device, then will
The substrate cut is washed described in being loaded into aobvious device 1, is subsequently placed in the glass beaker cleaned；
3) ethanol in proper amount (being advisable not cross substrate) is injected into glass beaker, is placed in Vltrasonic device and is cleaned 1 minute, it
Ethyl alcohol is poured into returnable bottle afterwards, so repeats to be cleaned 4 times with ethyl alcohol；
4) suitable quantity of water is injected into glass beaker, is placed in Vltrasonic device and cleans 1 minute, then outwell water, so weight
It is 4 times multiple；
5) first inject appropriate hydrogen peroxide into glass beaker, reinject the appropriate concentrated sulfuric acid, it is ensured that hydrogen peroxide and the concentrated sulfuric acid it
Than being 1:2 (sum of the two there was not substrate a little) persistently impregnate 30 minutes, liquid are then poured into returnable bottle；
6) appropriate amount of deionized water is injected into glass beaker, then is poured into the devil liquor recovery bottle of sulfuric acid, is then used again
Deionized water is cleaned 4 times；
7) first inject suitable quantity of water into glass beaker, then successively inject appropriate hydrogen peroxide and ammonium hydroxide, it is ensured that water, hydrogen peroxide,
The ratio between ammonium hydroxide is 6:1:1 (the sum of three did not had substrate a little) is subsequently placed in 260 degrees Celsius of thermal station and heats, bubble production to be had
Start timing when raw, beaker is removed after 15 minutes, by devil liquor recovery；
8) glass beaker and substrate deionized water are cleaned 4 times in Vltrasonic device；
9) suitable quantity of water is injected into glass beaker, reinjects appropriate hydrogen peroxide, finally injects appropriate concentrated hydrochloric acid, it is ensured that dioxygen
The ratio between water and concentrated hydrochloric acid are 1:1 (ensuring that the sum of three can not have substrate a little), is subsequently placed in 260 degrees Celsius of thermal station and heats,
Start timing when having bubble generation, beaker is removed after 15 minutes, by devil liquor recovery；
10) above-mentioned glass beaker and sample are cleaned 4 times with deionized water in Vltrasonic device；
11) Teflon beaker is cleaned 4 times with deionized water, then substrate is transferred in Teflon beaker, noted thereto
Enter a concentration of 1% hydrofluoric acid to take out substrate after 15-20 seconds, hydrofluoric acid is poured into returnable bottle；Then moistened with deionized water
Teflon beaker and substrate 3 times are washed, each rinse liquid pours into hydrofluoric acid returnable bottle；Use deionized water in Vltrasonic device again
Clean Teflon beaker 4 times；
12) substrate in Teflon beaker is transferred in glass beaker, is cleaned in Vltrasonic device 4 times with deionized water；
13) substrate is lain in for the spin-drying device 2, dries substrate under the drive of external impetus, so as to
In next drying operation.
The present invention also provides the samples that a kind of micro-nano device makes to develop, rinse technique, includes the following steps：
1) it is ready to have been carried out the micro-nano device sample of 2cm × 2cm of ultraviolet photolithographic；
2) it will be cleaned in Vltrasonic device 4 times for the beaker of sample development and rinse and other device deionized waters,
Again by the sample for having been carried out ultraviolet photolithographic be loaded into it is described wash aobvious device 1 after, then be placed in the beaker for development cleaned
In；
3) 6 developer solutions of appropriate RD (developer solution did not had substrate a little) are injected into the beaker for development, persistently impregnate 50
Second, the shadoof of aobvious device is washed described in control in soaking process, so that it is shaken up and down, so as to keep sample abundant with reagent
Contact, then pours into returnable bottle by developer solution；
4) it will be mounted with and wash aobvious device 1 described in sample and be transferred in the beaker for rinse, and inject appropriate deionization
Water persistently impregnates 30 seconds, washes the shadoof of aobvious device described in control in soaking process, so that it is shaken up and down, so as to make
Sample comes into full contact with deionized water, and deionized water is then poured into returnable bottle；
5) above-mentioned each beaker deionized water is cleaned 4 times in Vltrasonic device；
6) will develop, the sample of rinse transfer lie against on the spin-drying device 2, by sample under the drive of external impetus
Product dry, in order to next drying operation.
Embodiment 2, is shown in shown in Fig. 4 to Fig. 5：
The present invention provides a kind of sample processing device made for micro-nano device, includes washing aobvious dress by what Teflon made
1 and spin-drying device 2 are set, the aobvious device 1 of washing includes chassis 11, the shadoof 12 being screwed on the chassis, described
Shadoof 12 is fixed on the edge on the chassis 11, and the chassis 11 is equipped with several rectangular recess 13 and circular through hole 14, institute
It states circular through hole 14 and is through to 13 bottom of the rectangular recess from 11 bottom surface of the chassis；It is equipped among the spin-drying device 2 recessed
Slot 21, surrounding are equipped with the toothed edge 22 of hollow out.
Preferably, the wide diameter less than the circular through hole 14 of the rectangular recess 13.
Preferably, the shadoof 12 is detachable shadoof, and lower part is equipped with screw thread.
The present invention also provides the sample clean techniques that a kind of micro-nano device makes, and include the following steps：
1) silicon substrate is cut into the rectangle that the length of side is 1.5cm × 2cm；
2) glass beaker of cleaning base plate and other device deionized waters are cleaned 4 times in Vltrasonic device, then will
The substrate cut is washed described in being loaded into aobvious device 1, is subsequently placed in the glass beaker cleaned；
3) ethanol in proper amount (being advisable not cross substrate) is injected into glass beaker, is placed in Vltrasonic device and is cleaned 1 minute, it
Ethyl alcohol is poured into returnable bottle afterwards, so repeats to be cleaned 4 times with ethyl alcohol；
4) suitable quantity of water is injected into glass beaker, is placed in Vltrasonic device and cleans 1 minute, then outwell water, so weight
It is 4 times multiple；
5) first inject appropriate hydrogen peroxide into glass beaker, reinject the appropriate concentrated sulfuric acid, it is ensured that hydrogen peroxide and the concentrated sulfuric acid it
Than being 1:2 (sum of the two there was not substrate a little) persistently impregnate 30 minutes, liquid are then poured into returnable bottle；
6) appropriate amount of deionized water is injected into glass beaker, then is poured into the devil liquor recovery bottle of sulfuric acid, is then used again
Deionized water is cleaned 4 times；
7) first inject suitable quantity of water into glass beaker, then successively inject appropriate hydrogen peroxide and ammonium hydroxide, it is ensured that water, hydrogen peroxide,
The ratio between ammonium hydroxide is 6:1:1 (the sum of three did not had substrate a little) is subsequently placed in 260 degrees Celsius of thermal station and heats, bubble production to be had
Start timing when raw, beaker is removed after 15 minutes, by devil liquor recovery；
8) glass beaker and substrate deionized water are cleaned 4 times in Vltrasonic device；
9) suitable quantity of water is injected into glass beaker, reinjects appropriate hydrogen peroxide, finally injects appropriate concentrated hydrochloric acid, it is ensured that dioxygen
The ratio between water and concentrated hydrochloric acid are 1:1 (ensuring that the sum of three can not have substrate a little), is subsequently placed in 260 degrees Celsius of thermal station and heats,
Start timing when having bubble generation, beaker is removed after 15 minutes, by devil liquor recovery；
10) above-mentioned glass beaker and sample are cleaned 4 times with deionized water in Vltrasonic device；
11) Teflon beaker is cleaned 4 times with deionized water, then substrate is transferred in Teflon beaker, noted thereto
Enter a concentration of 1% hydrofluoric acid to take out substrate after 15-20 seconds, hydrofluoric acid is poured into returnable bottle；Then moistened with deionized water
Teflon beaker and substrate 3 times are washed, each rinse liquid pours into hydrofluoric acid returnable bottle；Use deionized water in Vltrasonic device again
Clean Teflon beaker 4 times；
12) substrate in Teflon beaker is transferred in glass beaker, is cleaned in Vltrasonic device 4 times with deionized water；
13) substrate is lain in for the spin-drying device 2, dries substrate under the drive of external impetus, so as to
In next drying operation.
The present invention also provides the samples that a kind of micro-nano device makes to develop, rinse technique, includes the following steps：
1) it is ready to have been carried out the micro-nano device sample of 1.5cm × 2cm of ultraviolet photolithographic；
2) it will be cleaned in Vltrasonic device 4 times for the beaker of sample development and rinse and other device deionized waters,
Again by the sample for having been carried out ultraviolet photolithographic be loaded into it is described wash aobvious device 1 after, then be placed in the beaker for development cleaned
In；
3) 6 developer solutions of appropriate RD (developer solution did not had substrate a little) are injected into the beaker for development, persistently impregnate 50
Second, the shadoof of aobvious device is washed described in control in soaking process, so that it is shaken up and down, so as to keep sample abundant with reagent
Contact, then pours into returnable bottle by developer solution；
4) it will be mounted with and wash aobvious device 1 described in sample and be transferred in the beaker for rinse, and inject appropriate deionization
Water persistently impregnates 30 seconds, washes the shadoof of aobvious device described in control in soaking process, so that it is shaken up and down, so as to make
Sample comes into full contact with deionized water, and deionized water is then poured into returnable bottle；
5) above-mentioned each beaker deionized water is cleaned 4 times in Vltrasonic device；
6) will develop, the sample of rinse transfer lie against on the spin-drying device 2, by sample under the drive of external impetus
Product dry, in order to next drying operation.
The above embodiments are only used to illustrate and not limit the technical solutions of the present invention, although above-described embodiment to the present invention into
Detailed description is gone, the related technical personnel of this field should understand that：It can modify to the present invention or replace on an equal basis, but
Any modification and part replacement for not departing from spirit and scope of the invention should all be covered in scope of the presently claimed invention.
Claims (3)
1. a kind of sample processing device made for micro-nano device, which is characterized in that include washing aobvious dress by what Teflon made
Set and spin-drying device, it is described wash aobvious device include chassis, the shadoof that is screwed on the chassis, set on the chassis
There are several rectangular recess and circular through hole, the circular through hole to be through to the rectangular recess bottom from the undersurface of bottom disc；Institute
It states and is equipped with groove among spin-drying device, surrounding is equipped with the toothed edge of hollow out；
The width of rectangular recess described above is less than the diameter of the circular through hole；
Shadoof described above is detachable shadoof, and lower part is equipped with screw thread.
2. a kind of cleaning of the sample processing device made using micro-nano device described in claim 1, which is characterized in that
Include the following steps：
1）Substrate is cut into small pieces；
2）The glass beaker of cleaning base plate and other device deionized waters are cleaned 4 times in Vltrasonic device, then will have been cut
Substrate be loaded into it is described wash in aobvious device, be subsequently placed in the glass beaker cleaned；
3）Ethanol in proper amount is injected into glass beaker, is placed in Vltrasonic device and is cleaned 1 minute, ethyl alcohol is poured into returnable bottle later,
It so repeats to be cleaned 4 times with ethyl alcohol；
4）Suitable quantity of water is injected into glass beaker, is placed in Vltrasonic device and is cleaned 1 minute, then outwells water, so repeatedly 4
Time；
5）Appropriate hydrogen peroxide is first injected into glass beaker, reinjects the appropriate concentrated sulfuric acid, it is ensured that the ratio between hydrogen peroxide and the concentrated sulfuric acid are
1:2, it persistently impregnates 30 minutes, liquid is then poured into returnable bottle；
6）Inject appropriate amount of deionized water into glass beaker, then be poured into the devil liquor recovery bottle of sulfuric acid, then spend again from
Sub- water cleans 4 times；
7）Suitable quantity of water is first injected into glass beaker, then successively injects appropriate hydrogen peroxide and ammonium hydroxide, it is ensured that water, hydrogen peroxide, ammonium hydroxide
The ratio between be 6:1:1, it is subsequently placed in 260 degrees Celsius of thermal station and heats, start timing when having bubble generation, burning is removed after 15 minutes
Cup, by devil liquor recovery；
8）Glass beaker and substrate deionized water are cleaned 4 times in Vltrasonic device；
9）Inject suitable quantity of water into glass beaker, reinject appropriate hydrogen peroxide, finally inject appropriate concentrated hydrochloric acid, it is ensured that hydrogen peroxide with
The ratio between concentrated hydrochloric acid is 1:1, it is subsequently placed in 260 degrees Celsius of thermal station and heats, start timing when having bubble generation, taken after 15 minutes
Lower beaker, by devil liquor recovery；
10）Above-mentioned glass beaker and sample are cleaned 4 times with deionized water in Vltrasonic device；
11）Teflon beaker is cleaned 4 times with deionized water, then substrate is transferred in Teflon beaker, is injected thereto dense
Degree takes out substrate after 15-20 seconds for 1% hydrofluoric acid, and hydrofluoric acid is poured into returnable bottle；Then deionized water rinse iron fluorine is used
Imperial beaker and substrate 3 times, each rinse liquid pours into hydrofluoric acid returnable bottle；Iron is cleaned in Vltrasonic device with deionized water again
Fluorine dragon beaker 4 times；
12）Substrate in Teflon beaker is transferred in glass beaker, is cleaned in Vltrasonic device 4 times with deionized water;
13）Substrate is lain in for the spin-drying device, is dried substrate under the drive of external impetus, in order to connect down
The drying operation come.
3. a kind of development of the sample processing device made using micro-nano device described in claim 1, rinse technique, feature
It is, includes the following steps：
1）It is ready to have been carried out the micro-nano device sample of ultraviolet photolithographic；
2）It will be cleaned in Vltrasonic device 4 times for the beaker of sample development and rinse and other device deionized waters, then will
Have been carried out ultraviolet photolithographic sample be loaded into it is described wash aobvious device after, then be placed in the beaker for development cleaned；
3）Appropriate developer solution is injected into the beaker for development, persistently impregnate 50 seconds, in soaking process control described in wash it is aobvious
The shadoof of device, makes it shake up and down, and so as to make sample be come into full contact with reagent, developer solution is then poured into recycling
Bottle；
4）It will be mounted with and wash aobvious device described in sample and be transferred in the beaker for rinse, and inject appropriate amount of deionized water, hold
It is continuous to impregnate 30 seconds, the shadoof of aobvious device is washed described in control in soaking process, it is made to shake up and down, so as to make sample with
Deionized water comes into full contact with, and deionized water is then poured into returnable bottle；
5）Above-mentioned each beaker deionized water is cleaned 4 times in Vltrasonic device；
6）To develop, the sample of rinse transfer lie against on the spin-drying device, sample is got rid of under the drive of external impetus
It is dry, in order to next drying operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510089590.4A CN104752282B (en) | 2015-02-27 | 2015-02-27 | A kind of sample processing device and treatment process for micro-nano device making |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510089590.4A CN104752282B (en) | 2015-02-27 | 2015-02-27 | A kind of sample processing device and treatment process for micro-nano device making |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104752282A CN104752282A (en) | 2015-07-01 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106328557B (en) * | 2015-06-16 | 2020-04-21 | 武汉理工大学 | Novel device for spin-drying sample in micro-nano device manufacturing process |
| CN107958862B (en) * | 2016-10-18 | 2021-11-09 | 台湾积体电路制造股份有限公司 | Jig for testing pin holes of protective layer of semiconductor, jig for testing pin holes of protective layer of semiconductor and method for testing pin holes of protective layer of semiconductor |
| CN108389781A (en) * | 2018-03-05 | 2018-08-10 | 广东先导先进材料股份有限公司 | The method of clean and reuse wafer cassette or casey |
| CN112086387B (en) * | 2020-08-14 | 2021-06-04 | 北京智创芯源科技有限公司 | Chip cleaning device and cleaning method |
| CN112871860A (en) * | 2020-08-28 | 2021-06-01 | 山东华光光电子股份有限公司 | Cleaning device and cleaning method for metal part of semiconductor laser |
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