CN104752253A - Wafer detection method and device - Google Patents
Wafer detection method and device Download PDFInfo
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- CN104752253A CN104752253A CN201310752625.9A CN201310752625A CN104752253A CN 104752253 A CN104752253 A CN 104752253A CN 201310752625 A CN201310752625 A CN 201310752625A CN 104752253 A CN104752253 A CN 104752253A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a wafer detection method and a wafer detection device, wherein the wafer detection method comprises the following steps: starting to rotate a turnplate after receiving a command signal of rotating to a preset target position, wherein the command signal is sent from a controller; sending a detection command signal to a sensor when the controller detects that wafer placement position on the turnplate is corresponding to the position of the sensor; after receiving the detection command signal by the sensor, controlling the wafer placement position of the turnplate to rotate to the preset target position when the status of the wafer placement position of the turnplate is detected to be identical to a status recorded in the sensor. By adding the detection function before putting the wafer into a technology chamber, the problems of energy source waste and technical chamber contamination caused by conducting the technology without the wafer are effectively avoided.
Description
Technical field
The present invention relates to semiconductor applications, particularly relate to a kind of chip detection method and equipment.
Background technology
PVD(physical vapour deposition (PVD)) refer under vacuum, adopt the arc-discharge technique of low-voltage, big current, utilize gas discharge that target is evaporated, and evaporated material and gas are all ionized, utilize the acceleration of electric field simultaneously, make to be deposited on wafer by evaporated material and product thereof.The method of physical vapour deposition (PVD) mainly contains vacuum evaporation, arc-plasma plating, ion film plating and molecular beam epitaxy etc., at present, physical gas phase deposition technology not only can depositing metallic films, alloy film, can also deposited compound, pottery, semiconductor and polymer etc.
Be generally and guarantee processing performance, PVD processing chamber needs to carry out two kinds of adjusting process.First adjusting process is pre-burning target, pre-burning target normally to have exposed in an atmosphere or after inactive a period of time at PVD processing chamber, the oxide of target material surface and other impurity are removed, during pre-burning target technique, by auxiliary wafer or cover dish and cover on pedestal, in case block compound and other Impurity depositions are on pedestal; Second adjusting process is coating, coating is generally that the material surface be deposited on during conventional P VD technique on PVD processing chamber inner surface applies one deck covering, as: the PVD application of titanium nitride produces one deck titanium nitride at PVD processing chamber inner surface usually, this titanium nitride layer is frangible, and peel off during subsequent technique, affect processing performance, therefore pass through at this titanium nitride layer surface-coated one deck titanium, to prevent peeling off of titanium nitride layer, ensure subsequent technique performance.Usually, the every predetermined interval time carries out primary coating.
At present, when carrying out PVD technique to wafer, the equipment of employing as shown in Figure 1.When wafer carries out technique at processing chamber, pedestal is under the driving of Ped motor, drive wafer to rising to process station, in the process, pedestal is through Cover O-ring(valve gap O shape ring) position, carry Cover O-ring and rise to process station together, now, wafer is fixed on pedestal by Cover O-ring, carries out technique; After technique completes, because the process time is long or other reasons, when Ped motor drives pedestal to move to low level, wafer is easy to be stuck in above Cover O-ring, this be just easy to cause when rotating disk enter next processing chamber carry out next technique time, there is the situation without sheet, pollution pedestal and processing chamber, also can cause the waste of resource simultaneously, increase production cost.
Summary of the invention
Based on this, be necessary the problem occurred when carrying out next technique for wafer without sheet, a kind of chip detection method and equipment are provided.
A kind of chip detection method, comprises the steps:
S100, rotating disk receive controller send turn to the command signal of goal-selling position after, start rotate;
S200, described controller detects that rotating disk places the position of wafer position and transducer to sending sense command signal extremely described transducer time corresponding;
S300, after described transducer receives described sense command signal, when detecting that the state of described rotating disk placement wafer position is identical with recording status in described transducer, controls described rotating disk placement wafer position and turns to described goal-selling position.
Wherein, described step S200 comprises the steps:
S210, detects described rotating disk placement wafer position whether corresponding with the position of described transducer;
S220, when described rotating disk places the position of wafer position and described transducer to sending sense command signal extremely described transducer time corresponding;
S220 ', when described rotating disk places the position of wafer position and described transducer not to the position of placing wafer position and described transducer time corresponding according to described rotating disk, calculates the first rotational angle of described rotating disk;
S230 ', according to the first rotational angle of described rotating disk, controls described rotating disk and places the position that wafer position turns to described transducer.
Wherein, described step S300 comprises the steps:
S310, after described transducer receives described sense command signal, detects the state that wafer position placed by described rotating disk;
S320, when the state that wafer position placed by described rotating disk is different from recording status in described transducer, sends alarm command;
S320 ', when the state that wafer position placed by described rotating disk is identical with recording status in described transducer, places wafer position and described goal-selling position according to current described rotating disk, calculates the second rotational angle of described rotating disk;
S330 ', according to the second rotational angle of described rotating disk, controls described rotating disk placement wafer position and turns to described goal-selling position.
Wherein, also comprise the steps:
S100 ', according to the position of current described rotating disk, calculates the corresponding relation that the position of wafer position and described transducer placed by described rotating disk.
Accordingly, for realizing above-mentioned chip detection method, present invention also offers a kind of wafer detecting device, comprising rotating disk, transducer and controller, wherein:
Described transducer, is arranged on rotating disk and places between wafer position and goal-selling position, be positioned at above described rotating disk;
Described controller, is connected with described rotating disk and described transducer respectively, comprises signal transmitting module, first detection module and the first control module, wherein:
Described signal transmitting module, for sending the command signal turning to described goal-selling position to described rotating disk;
Described first detection module, for detecting that described rotating disk places the position of wafer position and described transducer to sending sense command signal extremely described transducer time corresponding;
Described first control module, during for detecting that when described transducer the state of described rotating disk placement wafer position is identical with recording status in described transducer, controls described dial rotation to described goal-selling position.
Wherein, described first detection module comprises the first detecting unit, the first computing unit and the first control unit, wherein:
Whether described first detecting unit is corresponding with the position of described transducer for detecting described rotating disk placement wafer position;
Described first computing unit, for placing the position of wafer position and described transducer when described rotating disk not to the position of placing wafer position and described transducer time corresponding according to described rotating disk, calculates the first rotational angle of described rotating disk;
Described first control unit, for the first rotational angle according to described rotating disk, controls described rotating disk and places the position that wafer position turns to described transducer.
Wherein, described first control module comprises the second control unit, the second computing unit and the 3rd control unit, wherein:
Described second control unit, during for detecting that when described transducer the state of described rotating disk placement wafer position is different from recording status in described transducer, sends alarm command;
Described second computing unit, during for detecting that when described transducer the state of described rotating disk placement wafer position is identical with recording status in described transducer, place wafer position and described goal-selling position according to described rotating disk, calculate the second rotational angle of described rotating disk;
Described 3rd control unit, for the second rotational angle according to described rotating disk, controls described rotating disk placement wafer position and turns to described goal-selling position.
Wherein, described controller also comprises the first computing module, wherein:
Described first computing module, for the position according to current described rotating disk, calculates the corresponding relation that the position of wafer position and described transducer placed by described rotating disk.
Wherein, described transducer is distance setting formula transducer.
A kind of chip detection method provided by the invention and equipment, wherein method is, before wafer is sent into next processing chamber by rotating disk, the state of rotating disk being placed to wafer position detects, to judge that this rotating disk is placed wafer position place and whether be there is wafer, if exist, then by rotating rotating disk, wafer is sent into next processing chamber and carry out technique, it is by being increased in the measuring ability before wafer enters processing chamber, efficiently avoid without carrying out energy waste that technique causes and the problem that processing chamber pollutes in sheet situation.
Accompanying drawing explanation
Fig. 1 is processing chamber structural representation in PVD equipment;
Fig. 2 is chip detection method one specific embodiment flow chart;
Fig. 3 is another specific embodiment flow chart of chip detection method;
Fig. 4 is wafer detecting device one specific embodiment structural representation;
Fig. 5 is another specific embodiment structural representation of wafer detecting device;
Fig. 6 is the another specific embodiment structural representation of wafer detecting device;
Embodiment
For making technical solution of the present invention clearly understand, below in conjunction with drawings and the specific embodiments, the present invention is described in further details.
See Fig. 2, a kind of chip detection method, comprises the steps:
S100, rotating disk receive controller send turn to the command signal of goal-selling position after, start rotate;
S200, controller detects that rotating disk places the position of wafer position and transducer to sending sense command signal time corresponding to transducer;
S300, after transducer receives sense command signal, when detecting that the state of rotating disk placement wafer position is identical with recording status in transducer, controls rotating disk placement wafer position and turns to goal-selling position.
A kind of chip detection method provided by the invention, before wafer is sent into next processing chamber by rotating disk, the state of rotating disk being placed to wafer position detects, to judge that this rotating disk is placed wafer position place and whether be there is wafer, if exist, then by rotating rotating disk, wafer being sent into next processing chamber and carrying out technique, it is by being increased in the measuring ability before wafer enters processing chamber, efficiently avoid without carrying out energy waste that technique causes and the problem that processing chamber pollutes in sheet situation.
At this, it should be noted that, in transducer, recording status is the state when rotating disk placement wafer position exists wafer, when the state that wafer position placed by rotating disk is identical with the state recorded in transducer, show that rotating disk is placed wafer position and be there is wafer, next goal-selling position can be entered, carry out next step technique; Meanwhile, the process controlling the state of transducer detection rotating disk placement wafer position also can start just detect when starting and rotate at rotating disk, also when controlling below rotating disk placement wafer position arrival transducer, then can detect.
See Fig. 3, preferably, as a kind of embodiment, step S200 comprises the steps:
S210, detects rotating disk placement wafer position whether corresponding with the position of transducer;
S220, when rotating disk places the position of wafer position and transducer to sending sense command signal time corresponding to transducer;
S220 ', places wafer position when rotating disk and does not place wafer position and sensing station to time corresponding according to rotating disk with the position of transducer, calculate the first rotational angle of rotating disk;
S230 ', according to the first rotational angle of rotating disk, controls rotating disk placement wafer position and turns to sensing station.
When being detected rotating disk placement wafer position by transducer and whether there is wafer, must ensure that wafer position placed by rotating disk corresponding with the position of transducer, therefore, first whether correspondingly with the position of transducer detect rotating disk placement wafer position, namely detect rotating disk placement wafer position and whether be positioned at immediately below transducer; When the position that rotating disk places wafer position and transducer to time corresponding namely when rotating disk placement wafer position is positioned at immediately below transducer, controller sends sense command signal, after transducer receives sense command signal, detects rotating disk placement wafer position and whether there is wafer;
When detect position that rotating disk places wafer position and transducer not to the time in of corresponding namely when rotating disk placement wafer position departs from immediately below transducer, now, the detection light that sensor emission goes out accurately can not be irradiated to rotating disk and place wafer position place, therefore, in order to ensure that detecting light accurately can be irradiated to rotating disk placement wafer position place, make to detect rotating disk and place the result of the state of wafer position accurately and reliably, needing to control rotating disk placement wafer position is positioned at immediately below transducer, as a kind of execution mode, the relation between wafer position and the position of transducer is placed according to current dial, calculate the first rotational angle of rotating disk (namely, the angle that wafer position turns to the position of transducer placed by rotating disk), and according to the first rotational angle of calculated rotating disk, control rotating disk and place the position that wafer position turns to transducer, making rotating disk place wafer position is positioned at immediately below transducer, so that whether there is wafer to rotating disk placement wafer position detect.
As a kind of embodiment, step S300 comprises the steps:
S310, after transducer receives sense command signal, detects the state that wafer position placed by rotating disk;
S320, when the state that wafer position placed by rotating disk is different from recording status in transducer, sends alarm command;
S320 ', when the state that wafer position placed by rotating disk is identical with recording status in transducer, places wafer position and goal-selling position according to current dial, calculates the second rotational angle of rotating disk;
S330 ', according to the second rotational angle of rotating disk, controls rotating disk placement wafer position and turns to goal-selling position.
After control rotating disk placement wafer position is corresponding with the position of transducer, sense command signal is sent to transducer, after transducer receives sense command signal, whether there is wafer to rotating disk placement wafer position to detect, as a kind of embodiment, wafer position placed by transducer state by detecting rotating disk judges that rotating disk is placed wafer position and whether be there is wafer; When the state that wafer position placed by the rotating disk that transducer detects is different from recording status in transducer, because recording status in transducer is the state that rotating disk places that wafer position exists wafer, show that now rotating disk placement wafer position does not exist wafer, send alarm command, to remind operating personnel's checkout facility, avoid the problem without carrying out the energy waste that technique causes in sheet situation.
When the state that wafer position placed by the rotating disk that transducer detects is identical with recording status in transducer, shows that now rotating disk placement wafer position exists wafer, next step operation can be carried out, therefore control rotating disk placement wafer position and turn to goal-selling position; As a kind of embodiment, when controlling dial rotation to goal-selling position, first wafer position and goal-selling position is placed according to current dial, calculate the second rotational angle of rotating disk (namely, rotating disk placement wafer position turns to the rotational angle needed for goal-selling position), according to the second rotational angle of the rotating disk calculated, control dial rotation, until wafer position placed by rotating disk turn to goal-selling position, next step technique being carried out to wafer, avoiding the problem without carrying out the energy waste that technique causes in sheet situation equally.
More excellent, as a kind of execution mode, chip detection method provided by the invention also comprises the steps:
S100 ', according to the position of current dial, calculates the corresponding relation that the position of wafer position and transducer placed by rotating disk.
Accordingly, for realizing above-mentioned chip detection method, present invention also offers a kind of wafer detecting device, this wafer detecting device operation principle is identical with above-mentioned chip detection method principle, therefore, repeats part and repeats no more.
See Fig. 4 to Fig. 6, a kind of wafer detecting device, comprises rotating disk 510, transducer 520 and controller 530, wherein:
Transducer 520, is arranged on rotating disk and places between wafer position 511 and goal-selling position, be positioned at above rotating disk;
Controller 530, is connected with rotating disk 510 and transducer 520 respectively, comprises signal transmitting module 531, first detection module 532 and the first control module 533, wherein:
Signal transmitting module 531, for sending the command signal turning to goal-selling position to rotating disk 510;
First detection module 532, for detecting that when controller 530 rotating disk places the position of wafer position 511 and transducer 520 to sending sense command signal time corresponding to transducer 520;
First control module 533, during for detecting that when transducer 520 state of rotating disk placement wafer position 511 is identical with recording status in transducer 520, controlling rotating disk 510 and turning to goal-selling position.
The explanation of value, transducer 520 is distance setting formula transducer.
Preferably, as a kind of embodiment, first detection module 532 comprises the first detecting unit 5320, first computing unit 5321 and the first control unit 5322, wherein:
Whether the first detecting unit 5320 is corresponding with the position of transducer 520 for detecting rotating disk placement wafer position 511;
First computing unit 5321, for placing the position of wafer position 511 and transducer 520 not to the position of placing wafer position 511 and transducer 520 time corresponding according to rotating disk when rotating disk, the first rotational angle of calculating rotating disk 510;
First control unit 5322, for the first rotational angle according to rotating disk 510, controls rotating disk and places the position that wafer position 511 turns to transducer 520.
As a kind of embodiment, the first control module 533 comprises the second control unit 5330, second computing unit 5331 and the 3rd control unit 5332, wherein:
Second control unit 5330, during for detecting that when transducer 520 state of rotating disk placement wafer position 511 is different from recording status in transducer 520, sends alarm command;
Second computing unit 5331, during for detecting that when transducer 520 state of rotating disk placement wafer position 511 is identical with recording status in transducer 520, placing wafer position 511 and goal-selling position according to rotating disk, calculating the second rotational angle of rotating disk 510;
3rd control unit 5332, for the second rotational angle according to rotating disk 520, controls rotating disk placement wafer position 511 and turns to goal-selling position.
More excellent, controller 530 also comprises the first computing module 534, wherein:
First computing module 534, for the position according to current dial 510, calculates the corresponding relation that the position of wafer position 511 and transducer 520 placed by rotating disk.
See Fig. 6, as a specific embodiment of the present invention, rotating disk 510 is evenly divided into 8 regions, and wherein 1,3,5,7 regions are that wafer position placed by rotating disk, 2,4,6,8 regions are that dish or auxiliary wafer position are blocked in rotating disk placement, and X, T, Z, Y region is the installation site of transducer 520; When carrying out coating process, being rotated by rotating disk 510,1,3,5,7 regions being moved to respectively A, B, C, D processing chamber (goal-selling position) and carrying out technique; When carrying out pre-burning target or coating processes, 2,4,6,8 regions being moved to A, B, C, D processing chamber respectively and carries out adjusting process.Below with the wafer placed in 1 region after A processing chamber has carried out technique, need to move to before B processing chamber carries out next step technique, the detection whether 1 region wafer exists be described in detail:
When rotating disk 510 receive controller send move to the command signal of goal-selling position after, rotating disk 510 starts rotation, in rotating disk 510 rotation process, according to the position of current dial 510, calculate 1, 2, 3, 4, 5, 6, 7, 8 regions and A, B, C, D, X, Y, Z, the corresponding relation of T, and by judgement 1, 3, 5, 7 regions whether with X, T, Z, Y region is corresponding, when 1, 3, 5, 7 regions and X, T, Z, Y region to correspondence time namely when 1 region just in time turns to below X position between A processing chamber and B processing chamber (installation site of transducer 520), transducer 520 is by being mapped to 1 region place by detection illumination, if the reverberation of being returned by 1 regional reflex that transducer 520 captures is identical with the reverberation of the wafer recorded in transducer 520, then show that 1 region place has wafer, rotating disk 510 can be rotated further, until 1 region is sent to B processing chamber, if the reverberation of being returned by 1 regional reflex that transducer 520 captures is different from the reverberation of the wafer recorded in transducer 520 maybe can not capture reverberation, show that 1 region does not exist wafer, likely in rotating disk 510 rotation process, wafer glides or drops, or 1 region place there are abnormal conditions, therefore send warning, remind operating personnel's checkout equipment, when 1 region does not turn to X position, need to control rotating disk 510 to rotate, 1 region is made to arrive X position, a kind of execution mode is, rotation due to usual rotating disk 510 rotates clockwise for benchmark with T position, therefore, if 1 region moves to X position by A processing chamber, through the relation of 1 region and X position, calculate the first rotational angle of rotating disk 510, can show that mobile scheme is according to the first rotational angle of this rotating disk 510: control rotating disk 510 and rotate, make 3 area rotations to T position, thus realize 1 area rotation to X position, then the detection of 1 zone state is carried out.
After detecting that 1 region place has wafer, according to position and the B processing chamber position relationship of current dial 510, calculate the second rotational angle of now rotating disk 510, according to the second rotational angle of this rotating disk 510, can show that the mobile scheme 1 region being moved to B processing chamber is: control rotating disk 510 and rotate, make 4 regions move to T position, thus realize 1 region and move to B processing chamber, carry out next step technique; When detecting that 1 region place does not exist wafer, sending warning, reminding operating personnel checkout facility, while ensureing that process safety carries out, avoiding without carrying out energy waste that technique causes and pollution problem in sheet situation.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (9)
1. a chip detection method, is characterized in that, comprises the steps:
S100, rotating disk receive controller send turn to the command signal of goal-selling position after, start rotate;
S200, described controller detects that rotating disk places the position of wafer position and transducer to sending sense command signal extremely described transducer time corresponding;
S300, after described transducer receives described sense command signal, when detecting that the state of described rotating disk placement wafer position is identical with recording status in described transducer, controls described rotating disk placement wafer position and turns to described goal-selling position.
2. chip detection method according to claim 1, is characterized in that, described step S200 comprises the steps:
S210, detects described rotating disk placement wafer position whether corresponding with the position of described transducer;
S220, when described rotating disk places the position of wafer position and described transducer to sending described sense command signal extremely described transducer time corresponding;
S220 ', when described rotating disk places the position of wafer position and described transducer not to the position of placing wafer position and described transducer time corresponding according to described rotating disk, calculates the first rotational angle of described rotating disk;
S230 ', according to the first rotational angle of described rotating disk, controls described rotating disk and places the position that wafer position turns to described transducer.
3. chip detection method according to claim 2, is characterized in that, described step S300 comprises the steps:
S310, after described transducer receives described sense command signal, detects the state that wafer position placed by described rotating disk;
S320, when the state that wafer position placed by described rotating disk is different from recording status in described transducer, sends alarm command;
S320 ', when the state that wafer position placed by described rotating disk is identical with recording status in described transducer, places wafer position and described goal-selling position according to current described rotating disk, calculates the second rotational angle of described rotating disk;
S330 ', according to the second rotational angle of described rotating disk, controls described rotating disk placement wafer position and turns to described goal-selling position.
4. the chip detection method according to any one of claims 1 to 3, is characterized in that, also comprises the steps:
S100 ', according to the position of current described rotating disk, calculates the corresponding relation that the position of wafer position and described transducer placed by described rotating disk.
5. a wafer detecting device, is characterized in that, comprises rotating disk, transducer and controller, wherein:
Described transducer, is arranged on rotating disk and places between wafer position and goal-selling position, be positioned at above described rotating disk;
Described controller, is connected with described rotating disk and described transducer respectively, comprises signal transmitting module, first detection module and the first control module, wherein:
Described signal transmitting module, for sending the command signal turning to described goal-selling position to described rotating disk;
Described first detection module, for detecting that described rotating disk places the position of wafer position and described transducer to sending sense command signal extremely described transducer time corresponding;
Described first control module, during for detecting that when described transducer the state of described rotating disk placement wafer position is identical with recording status in described transducer, controls described dial rotation to described goal-selling position.
6. wafer detecting device according to claim 5, is characterized in that, described first detection module comprises the first detecting unit, the first computing unit and the first control unit, wherein:
Whether described first detecting unit is corresponding with the position of described transducer for detecting described rotating disk placement wafer position;
Described first computing unit, for placing the position of wafer position and described transducer when described rotating disk not to the position of placing wafer position and described transducer time corresponding according to described rotating disk, calculates the first rotational angle of described rotating disk;
Described first control unit, for the first rotational angle according to described rotating disk, controls described rotating disk and places the position that wafer position turns to described transducer.
7. wafer detecting device according to claim 6, is characterized in that, described first control module comprises the second control unit, the second computing unit and the 3rd control unit, wherein:
Described second control unit, during for detecting that when described transducer the state of described rotating disk placement wafer position is different from recording status in described transducer, sends alarm command;
Described second computing unit, during for detecting that when described transducer the state of described rotating disk placement wafer position is identical with recording status in described transducer, place wafer position and described goal-selling position according to described rotating disk, calculate the second rotational angle of described rotating disk;
Described 3rd control unit, for the second rotational angle according to described rotating disk, controls described rotating disk placement wafer position and turns to described goal-selling position.
8. the wafer detecting device according to any one of claim 5 to 7, is characterized in that, described controller also comprises the first computing module, wherein:
Described first computing module, for the position according to current described rotating disk, calculates the corresponding relation that the position of wafer position and described transducer placed by described rotating disk.
9. wafer detecting device according to claim 8, is characterized in that, described transducer is distance setting formula transducer.
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| CN201310752625.9A CN104752253B (en) | 2013-12-31 | 2013-12-31 | Chip detection method and equipment |
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| CN201310752625.9A CN104752253B (en) | 2013-12-31 | 2013-12-31 | Chip detection method and equipment |
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| US20060287761A1 (en) * | 2005-06-16 | 2006-12-21 | Shigeru Ishizawa | Transfer mechanism and semiconductor processing system |
| US20100124610A1 (en) * | 2008-11-19 | 2010-05-20 | Tokyo Electron Limited | Substrate position detection apparatus, substrate position detection method, film deposition apparatus, film deposition method, and a computer readable storage medium |
| CN102315086A (en) * | 2010-06-30 | 2012-01-11 | 中芯国际集成电路制造(上海)有限公司 | Device for improving movement accuracy of mechanical arm and use method thereof |
| CN102918640A (en) * | 2010-05-27 | 2013-02-06 | 松下电器产业株式会社 | Plasma processing device |
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2013
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060287761A1 (en) * | 2005-06-16 | 2006-12-21 | Shigeru Ishizawa | Transfer mechanism and semiconductor processing system |
| US20100124610A1 (en) * | 2008-11-19 | 2010-05-20 | Tokyo Electron Limited | Substrate position detection apparatus, substrate position detection method, film deposition apparatus, film deposition method, and a computer readable storage medium |
| CN102918640A (en) * | 2010-05-27 | 2013-02-06 | 松下电器产业株式会社 | Plasma processing device |
| CN102315086A (en) * | 2010-06-30 | 2012-01-11 | 中芯国际集成电路制造(上海)有限公司 | Device for improving movement accuracy of mechanical arm and use method thereof |
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