CN104746020B - A kind of processing method of copper alloy target - Google Patents
A kind of processing method of copper alloy target Download PDFInfo
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- CN104746020B CN104746020B CN201310741633.3A CN201310741633A CN104746020B CN 104746020 B CN104746020 B CN 104746020B CN 201310741633 A CN201310741633 A CN 201310741633A CN 104746020 B CN104746020 B CN 104746020B
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Abstract
The invention discloses a kind of processing method of the copper alloy target for belonging to sputtering target material manufacturing technology field.The method mainly includes：High-purity copper alloy casting ingot is uniformly heated to 350 600 DEG C by heating furnace, is incubated 13 hours.Hot forging is carried out along the directions of X/Y/Z tri- using forging equipment respectively to ingot casting.To carry out multi-pass on duo mill back and forth cold rolling for blank after forging, and pass deformation is 8%~20%, and total deformation is 70%~90%.Rear blank is rolled in 250~450 DEG C of scopes of heat-treatment furnace, 2~4 hours are incubated, and is met high-purity copper alloy sputtering target base of requirement.Below 30 μm, texture orientation random distribution disclosure satisfy that the requirement of integrated circuit 45nm and following manufacturing process to the copper alloy target average grain size for obtaining by this method.
Description
Technical field
The invention belongs to target manufacturing technology field, and in particular to a kind of processing method of copper alloy target.
Background technology
Integrated circuit miniaturization process technique is maked rapid progress, and physical dimension pushes deep-submicron to from micron, and then is marched toward and received
Meter Shi Dai, the ratio that current whole world 45nm and following technique production capacity account for semiconductor manufacturing aggregated capacity is increasing.
To 45nm and following process stage, the metal line width of IC chip circuit is more and more small, and the wire number of plies is more and more.
And due to relation electrically with mechanical property, signal transmission can produce delay because of short circuit.The signal transmission of logic chip circuit,
Also because processing procedure granular makes coiling Distance Shortened, winding capacitance increase and cause around wire delay.These all must with copper conductor with
Dielectric materials, replace previous aluminium alloy to solve capacitance resistance time delay (RC Time Delay) problem, therefore low
The exploitation of dielectric material also becomes more and more urgent with application.Copper lines are interconnected to optimize circuit board and improve and manufacture close
Degree, so as to be greatly lowered while cost as performance boost blaze the trail, but is 45nm and following for wiring width, is indulged
Crossfoot cun is than the superfinishing thin wires more than 8, Seed Layer（seed）Thickness be changed into the very thin films of below 100nm, using 6N superelevation
Fine copper target forms the occasion of Seed Layer, will produce cohesion, it is impossible to form good Seed Layer, and problems of electromigration also more shows
Seriously, generally there is the intersection connected with dielectric at the top of copper conductor in it.
Ultra-pure Cu alloy material is researched and developed at present（CuMn, CuAl etc.）It is the important development side in copper wiring technique
To for suppressing electromigration, and beneficial to the stability and uniformity of Cu Seed Layers is improved, while avoiding occurring cohesion during plating
Thing phenomenon.
In sum, it high performance, characteristic size is manufactured is 45nm and more that ultra-pure Cu alloy material sputtering target material is
It is used for necessary to interconnection line Cu films in small semiconductor IC device.
Patent CN101473059A discloses a kind of preparation method of Cu-Mn alloy sputtering targets, the method use purity for
The Cu and purity of 6N carry out melting for the Mn of 5N, obtain high-purity Cu-Mn alloy cast ingots, then ingot casting is carried out under the conditions of 350 DEG C
Axially forging, and hot rolling and cold rolling is carried out, obtain sputtering target blankss by dynamic recrystallization treatment.In target blankss forming process, mainly
Control Mn constituent contents, impurity content and texture are orientated the sputtered film few to obtain granule content.But the forging of the method
Mode is made for unidirectional upsetting pull, is forged only in the axial direction.
Patent CN101243201A discloses a kind of preparation method containing Mn sputtering targets of less occurrence of particle, and the method is used
The Cu and purity of 6N carry out melting for the Mn of 3N, obtain high-purity Cu-Mn alloy cast ingots, then ingot casting is forged, and control finish-forging
Temperature be more than 450 DEG C, and carry out it is repeatedly cold rolled annealed, by dynamic recrystallization treatment obtain sputter blank, by after machining
Implement hip treatment at a temperature of 500 DEG C with fine aluminium backboard, obtain sputtering target material.In target blankss forming process, mainly
Control Mn constituent contents, the impurity content sputtered film few to obtain granule content.
The content of the invention
It is an object of the invention to provide a kind of processing method of copper alloy target, integrated circuit 45nm and following is disclosure satisfy that
The requirement of manufacturing process.
Above-mentioned purpose of the invention reaches by the following technical programs：
A kind of processing method of copper alloy target is as follows comprising step：
1）High-purity copper alloy casting ingot is uniformly heated to 350~600 DEG C by heating furnace, is incubated 1~3 hour；
2）Hot forging is carried out along the directions of X/Y/Z tri- respectively to ingot casting；X, Y are radially and orthogonal, and Z is for axially；
3）To carry out multi-pass on duo mill back and forth cold rolling for blank after hot forging, and pass deformation is 8%~20%, total deformation
Measure is 70%~90%；
4）Rear blank is rolled in 250~450 DEG C of scopes of heat-treatment furnace, 2~4 hours are incubated, and obtains high-purity copper alloy sputtering target
Base.
Described copper alloy is CuMn or CuAl alloys.
The forging time of described hot forging must be controlled within 20min, and final forging temperature is 400 DEG C~500 DEG C；
Described hot forging, pulling jumping-up ratio is 1.5:1~2:Between 1.
Beneficial effects of the present invention：Processing method of the invention can realize the preparation of copper alloy target, prevent in wiring
Width be 45nm and it is following when, it is to avoid occur coacervation during plating, can simultaneously be effectively suppress electromigration, be conducive to carrying
The stability and uniformity of Cu Seed Layers high, this method do not specify forging mode, merely define final forging temperature for more than 450 DEG C,
And the uniformity that can further lift sputtering target material blank is forged using the direction upsetting pulls of X/Y/Z tri-.The inventive method is obtained
Copper alloy target average grain size below 30 μm, texture is oriented to random distribution.
Brief description of the drawings
Fig. 1 is that high-purity copper alloy casting ingot forges schematic diagram, and wherein X, Y is radially and orthogonal, and Z is for axially.
Specific embodiment
Embodiment 1~5：
Copper alloy casting ingot specification is 150 × 130t of φ, and hot forging is carried out under the conditions of 350~600 DEG C, and forging mode is X/Y/
The direction jumping-up pullings of Z tri-, upsetting pull ratio is 2:1, final forging temperature is 450 DEG C, and cold rolling pass deflection is 15%, is rolled by cold rolling
400 × 18t of φ processed；
Then dynamic recrystallization treatment is carried out under the conditions of 400 DEG C/2h, target blankss is rapidly cooled down, be made target, passed through
Machining is processed into the target blankss of 380 × 15t of φ, and reusing Diffusion Welding makes it be welded with copper alloy backing plate, is made and splashes
Shoot at the target material.
What is obtained the results are shown in Table 1, it can be seen that carry out hot forging in the range of 350 DEG C~600 DEG C, afterwards by it is cold rolling heat at
Below 30 μm, with the rising of forging temperature, average grain size is gradually for the sputtering target material average grain size obtained after reason
Increase.
Comparative example 1~2：
In order to obtain high-purity copper alloy target forging range, low temperature and hot test are carried out respectively, enter with embodiment
Row contrast.
Copper alloy casting ingot specification is 150 × 130t of φ, carries out hot forging under the conditions of 300 DEG C, 650 DEG C respectively, forges mode
It is the direction jumping-up pullings of X/Y/Z tri-, upsetting pull ratio is 2:1, cold rolling pass deflection be 15%, rolled by cold rolling φ 400 ×
18t；
Then dynamic recrystallization treatment is carried out under the conditions of 400 DEG C/2h, target blankss is rapidly cooled down, be made target, passed through
Machining is processed into the target blankss of 380 × 15t of φ, and reusing Diffusion Welding makes it be welded with copper alloy backing plate, is made and splashes
Shoot at the target material.
What is obtained the results are shown in Table 1, it can be seen that when hot forging is carried out for 150 DEG C, by the sputtering obtained after cold rolling heat treatment
Target institutional framework is more chaotic, and uniformity is poor, there is lamination.And when hot forging is carried out for 650 DEG C, at cold rolling heat
The sputtering target material average grain size obtained after reason is more thick, there is the phenomenon of individual crystalline grains abnormal growth, average crystal grain chi
Very little is 40 μm.
Claims (3)
1. a kind of processing method of copper alloy target, it is characterised in that：It is as follows comprising step：
1) high-purity copper alloy casting ingot is uniformly heated to 350~600 DEG C by heating furnace, is incubated 1~3 hour；
2) hot forging is carried out along the directions of X/Y/Z tri- respectively to ingot casting；X, Y are radially and orthogonal, and Z is for axially；
The forging time of described hot forging must be controlled within 20min, and final forging temperature is 400 DEG C~500 DEG C；
3) after hot forging blank to carry out multi-pass on duo mill back and forth cold rolling, pass deformation is 8%~20%, total deformation
It is 70%~90%；
4) rear blank is rolled in 250~450 DEG C of scopes of heat-treatment furnace, 2~4 hours are incubated, and obtains high-purity copper alloy sputtering target base.
2. the processing method of a kind of copper alloy target according to claims 1, it is characterised in that described copper alloy is
CuMn or CuAl alloys.
3. a kind of processing method of the copper alloy target according to claims 1, it is characterised in that described hot forging, pulls out
Jumping-up ratio long is 1.5:1~2:Between 1.
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10760156B2 (en) | 2017-10-13 | 2020-09-01 | Honeywell International Inc. | Copper manganese sputtering target |
| US11035036B2 (en) * | 2018-02-01 | 2021-06-15 | Honeywell International Inc. | Method of forming copper alloy sputtering targets with refined shape and microstructure |
| CN112063976B (en) * | 2020-09-11 | 2022-08-30 | 宁波江丰电子材料股份有限公司 | Ultrahigh-purity copper target material and grain control method thereof |
| CN112921287B (en) * | 2021-01-22 | 2022-10-28 | 宁波江丰电子材料股份有限公司 | Ultrahigh-purity copper target material and grain orientation control method thereof |
| CN113857402A (en) * | 2021-09-27 | 2021-12-31 | 宁波江丰电子材料股份有限公司 | Preparation method of alloy high-purity copper target material |
| CN114000072A (en) * | 2021-10-28 | 2022-02-01 | 宁波江丰电子材料股份有限公司 | Heat treatment method of copper back plate |
| CN115341161B (en) * | 2022-08-22 | 2023-06-23 | 宁波江丰电子材料股份有限公司 | Copper-aluminum alloy target material and preparation method and application thereof |
| CN116240474B (en) * | 2023-03-21 | 2023-10-20 | 山东海特电子材料有限公司 | Preparation method of high-purity copper target |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0882813A1 (en) * | 1997-06-02 | 1998-12-09 | Japan Energy Corporation | High-purity copper sputtering targets and thin films |
| CN1928129A (en) * | 2006-09-29 | 2007-03-14 | 宁波江丰电子材料有限公司 | Method for preparing sputtering target material |
| CN102146554A (en) * | 2011-03-16 | 2011-08-10 | 杭州宣宁电子材料有限公司 | Preparation method for high-purity copper sputtering target material |
-
2013
- 2013-12-27 CN CN201310741633.3A patent/CN104746020B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0882813A1 (en) * | 1997-06-02 | 1998-12-09 | Japan Energy Corporation | High-purity copper sputtering targets and thin films |
| CN1928129A (en) * | 2006-09-29 | 2007-03-14 | 宁波江丰电子材料有限公司 | Method for preparing sputtering target material |
| CN102146554A (en) * | 2011-03-16 | 2011-08-10 | 杭州宣宁电子材料有限公司 | Preparation method for high-purity copper sputtering target material |
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