CN104734535A - Power drive system - Google Patents
Power drive system Download PDFInfo
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- CN104734535A CN104734535A CN201510146796.6A CN201510146796A CN104734535A CN 104734535 A CN104734535 A CN 104734535A CN 201510146796 A CN201510146796 A CN 201510146796A CN 104734535 A CN104734535 A CN 104734535A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- Power Engineering (AREA)
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Abstract
The invention provides a power drive system, and relates to the technical field of motor drive. The power drive system comprises a three-phase parallel connection circuit of a single-layer aluminum substrate and an electrical structure. According to the power drive system, the single-layer aluminum substrate is matched with the electrical structure of a laminated busbar, the current loop area is reduced, the advantages of high thermal conductivity and good heat balance of the single-layer aluminum substrate are maintained, and the larger power density and good heat balance are achieved with a smaller area.
Description
Technical field
The present invention relates to the Driving technique field of motor.
Background technology
Along with the minimizing of fossil energy and the growing interest of mankind's environmental pollution, be that the drive system of power is applied widely with motor, especially high speed development is able in mobile traffic field, as electric automobile and hybrid electric vehicle power drive system, high-speed railway locomotive power-driven system, military boats and ships drive system, unmanned plane unmanned vehicle drive system etc.Mobile traffic drive system mainly contains both direction at present, and a class is low-pressure system, and cell voltage, generally at below 100V, is mainly used in low speed mobile traffic, as low-speed electronic car, unmanned scout car etc.; Another kind of, be high-pressure system, cell voltage, generally at more than 200V, is mainly used in the high-speed mobile vehicles, as height motor vehicle, high-speed railway locomotive etc.In the power device of drive system, MOSFET is fast with its switching speed, is easy in parallel, the features such as advantage of lower cost, is very applicable to low-pressure system.The R of low pressure MOSFET
dS (ON)even a few milliohm of tens milliohms can be accomplished at present, make its conduction loss very low like this, in addition its R
dS (ON)there is positive temperature coefficient, make MOSFET be suitable in parallel use, the current capacity position each individual devices electric current sum ideally after parallel connection, thus according to system power requirement, the number of paralleling MOS FET can be determined.But the problem using multiple paralleling MOS FET to bring is the increase in device connection, heat radiation, current balance and thermal balance problem.
Use for multiple MOSFET parallel connection at present, its structural design mainly contains three kinds: (1) is based on the parallel connection of complicated DC bus, this structure adopts direct insertion MOSFET substantially, specific implementation method be: first planned the distribution of element and the connected mode of DC bus, then the MOSFET be fixed on DC bus is welded on the pcb board designed, this structure installment complex process, actual production inefficiency, and maintenance and debugging all very inconvenient; (2) based on the parallel connection of individual layer aluminium base, that this method generally adopts is surface-adhered type MOSFET, connects with individual layer Copper Foil, its mounting process simplifies greatly, conductive coefficient height is beneficial to the thermal balance of MOSFET very much, but to be current circuit area large for its shortcoming, causes stray inductance large; (3) based on the parallel connection of double layer substrate, that this method generally also adopts is surface-adhered type MOSFET, connect with double-deck Copper Foil, its current circuit is little, is beneficial to reduction stray inductance, mounting process is suitable with individual layer aluminium base, but its shortcoming is the complex manufacturing of aluminium base, and cost improves greatly, and because add one deck FR-4, cause the conductive coefficient of aluminium base to decline, and be unfavorable for the thermal balance of MOSFET.Certainly except above method, also have other certain methods, but have certain shortcoming.
Summary of the invention
In order to overcome the deficiencies in the prior art, the object of the invention is that providing a kind of keeps the advantage that individual layer aluminium base thermal conductivity is high, thermal balance is good, provides the power driven system of larger power density and good thermal balance with less area.
The electrical structure of laminated bus is coordinated based on individual layer aluminium base, while minimizing current circuit area, keep the advantage that individual layer aluminium base thermal conductivity is high, thermal balance is good, there is provided larger power density and good thermal balance with less area, the present invention includes a kind of parallel three phase circuit and electrical structure of individual layer aluminium base.
The parallel three phase circuit of described individual layer aluminium base comprises: on individual layer aluminium base, be divided into 3 regions 21 from the bottom to top, 22, 23(as shown in Figure 2), U respectively, V, W alpha region, each region is made up of upper pipe paralleling MOS FET module and lower pipe paralleling MOS FET module, whole parallel three phase circuit has the parallel paralleling MOS FET module of 6 rows, each row's module comprises 10 MOSFET, individual layer aluminium base is divided into 7 electric current doabs by 6 row's paralleling MOS FET modules, be respectively pipe source electrode doab 37 under U phase from bottom to up, in U phase, the lower pipe of pipe source electrode and U phase drains doab 36, U phase and pipe drain electrode doab 35 in V phase, in V phase, pipe source electrode and lower pipe drain doab 34, W phase pipe source electrode doab 33 lower to V phase, in W phase, pipe source electrode and lower pipe drain doab 32, pipe drain electrode doab 31 in W phase, in W phase, in pipe drain electrode doab 31, U phase and V phase, pipe drain electrode doab 35 is furnished with positive electrode current input interface 39 respectively, and under U phase, the pipe doab 33 that drains of pipe source electrode and lower pipe in doab 37, V phase that drains is furnished with cathodal current output interface 38 respectively, in U phase, pipe source electrode and pipe under the U phase doab 32 that drains of pipe source electrode and lower pipe in doab 34, W phase that drains of pipe source electrode and lower pipe in doab 36, V phase that drains is furnished with respectively and exchanges output interface 310.
Because these three parallel circuitss are symmetrical, describe dynamically so carry out circuit for the current trend of W phase.Electric current flows into pipe drain electrode doab in W phase by positive electrode current input interface, W phase, pipe paralleling MOS FET module flow to pipe source electrode and lower pipe in W phase and to drain doab, in W phase, pipe source electrode and the lower pipe doab that drains exchanges output interface, for output current, electric current is pipe source electrode doab under W phase lower pipe paralleling MOS FET module to W phase and V phase, flow out through cathodal current output interface, complete the current circuit that current from power source positive pole inputs to power cathode output.
Described electrical structure comprises: aluminium base direct current input/output structure, alternating current export structure, laminated bus structure and input/output signal structure; Aluminium base direct current input/output structure adopts the mode of welding to be connected on the positive electrode current input interface 39 of parallel three phase circuit, cathodal current output interface 38; The mode of alternating current export structure screw fastening is connected on the interchange output interface 310 of parallel three phase circuit; Input and output crimping position 7 screw fastening of laminated bus structure is fitted on direct current input structure; Signal input/output structure is welded on aluminium base, makes U, V, W alpha region 21,22,23 have a signal input output end mouth respectively.This electrical structure utilizes PCB as DC bus, and both positive and negative polarity walks PCB top layer and bottom respectively, repeatability very high between both positive and negative polarity, effective minimizing stray inductance, and making production operation simple, efficiency is high and be easy to realize modularization, connects simple and reliable between each module.
Described aluminium base direct current input/output structure adopts copper coin material; The side of copper coin material is provided with the welding plane 91 for welding, welding plane 91 is provided with the multiple flutings 93 for increasing length of invasion, convenient welding exhaust, this fluting effectively can increase the length of invasion of welding, and gas when contributing to large-area welding in soldering paste is discharged, while reducing welding voidage, improve weld strength; The opposite side of copper coin material is provided with the conductive plane 92 for crimping, conductive plane 92 is provided with the screwed hole 94 installed for screw, and outside input and output electric current is realized on conductive plane 92 by the conductor crimping such as bus, wire and the electric current input and output of module-external.
Described alternating current export structure comprises conducting block 101, insulating sleeve 102, holding screw 103.
The side of described conducting block 101 is provided with 2 places and is equipped with installing hole 106 on conductive plane 104,105, two place's conductive plane 104,105 of crimping; The other side of conducting block 101 is provided with 1 place's conductive plane 107, and described conductive plane 107 is provided with screwed hole 108; The outside of described insulating sleeve 102 is multidiameters 109, and the center of multidiameter 109 is provided with installing hole 110, and installing hole 110 is for installing holding screw 103, and multidiameter 109 is for compressing conducting block 101.
Described laminated bus structure adopts PCB as DC bus, and have three layers, ground floor is top layer Copper Foil, and this one deck is top layer conductive layer; The second layer is FR-4 epoxy plate; Third layer is bottom Copper Foil, is bottom conductive layer.
Described signal input/output structure makes each phase of three-phase drive circuit use a signal input output end mouth respectively.
Compared with prior art, the performance of its beneficial effect is as follows in the present invention:
(1) the present invention is while minimizing current circuit area, keeps the advantage that individual layer aluminium base thermal conductivity is high, thermal balance is good, can provide larger power density and good thermal balance like this with less area.
(2) circuit aspect of the present invention structure is simple, is easy to expansion and modularization, can be mated the drive system of different capacity grade, have larger flexibility by the quantity changing paralleling MOS FET.
(3) electrical structure aspect of the present invention adopts the connected mode of welding and screw fastening, and technique is easy to realize, and aluminium base is produced and is easy to mass, controller assembly operation is simple, and efficiency is high, and reliability is high.
(4) owing to reducing loop area, power density is high, thermal balance performance is good, reliability is high, so make the holistic cost of system lower than original technical scheme, can play positive role to the popularization of low-voltage driving system.
Accompanying drawing explanation
Fig. 1 is system schematic of the present invention; Wherein: 1 be diversion column B+, 2 are diversion column B-, 3 be electric capacity, 4 are top layer Copper Foils, 5 are FR-4 epoxy plates, 6 are bottom Copper Foils, 7 is aluminium base input and output crimping positions, 8 is that to exchange diversion column, 9 are parallel three phase circuit.
Fig. 2 is circuit theory diagrams of the present invention; Wherein: 21 are U alpha regions, 22 are V alpha regions, 23 is W alpha regions.
Fig. 3 is that parallel three phase circuit MOSFET of the present invention distributes and current relationship; Wherein: 31 is that in W phase, pipe doab, 32 is that in W phase, pipe source electrode and the lower pipe doab, 35 that drains of pipe source electrode and lower pipe V phase in that drains doab, 33 to be the lower pipe source electrode doabs, 34 of W phase and V phase be is that in U phase and V phase, the pipe doab, 36 that drains is that in U phase, drain doab, U phase of pipe source electrode and U phase time pipe descends pipe source electrode doab.
Fig. 4 is aluminium base schematic diagram of the present invention; Wherein: 31 is that in W phase, pipe doab, 32 is that in W phase, pipe source electrode and the lower pipe pipe source electrode doab, 34 lower to V phase that be W phases, doab, 33 that drain is that V phase in, pipe source electrode and the lower pipe doab, 36 that drains doab, 35 to be U phases with pipe in V phase drain be that in U phase, pipe source electrode and U phase time pipe drain doab, U phase to descend pipe source electrode doab, 38 to be cathodal current output interfaces, 39 are positive electrode current input interfaces, 310 is exchange output interface.
Fig. 5 is parallel three phase electrical block diagram of the present invention; Wherein: 51 is holding screws, 52 is insulating sleeves, 53 is conducting blocks, 54 is B+ aluminium base input crimping positions, 55 is aluminium bases, 56 is heat-conducting interface material, and 57 is fin, and 58,59,510 are signal input output end mouths, 511 is MOSFET, 512 are B-aluminium base input crimping positions, 513 are B+ aluminium base input crimping positions, 514 is B-aluminium base input crimping positions.
Fig. 6 is laminated bus structure schematic diagram of the present invention; Wherein: 4 are top layer Copper Foils, 5 are FR-4 epoxy plates, 6 is bottom Copper Foils.
Fig. 7 is aluminium base direct current input/output structure schematic diagram of the present invention; Wherein: 91 is welding planes, and 92 is the conductive planes for crimping, 93 is the multiple flutings for increasing length of invasion, convenient welding exhaust, and 94 is the screwed holes installed for screw.
Fig. 8 is interchange input structure schematic diagram of the present invention; Wherein: 104,105 is conductive planes, 106 is installing holes, 107 is conductive planes of the other side of conducting block 53, and 108 is screwed holes, and 109 is multidiameters, and 110 is installing holes.
Embodiment
As shown in Figure 1, power driven system of the present invention comprises parallel three phase circuit layout and the electrical structure of individual layer aluminium base.
The parallel three phase circuit layout of individual layer aluminium base comprises: on individual layer aluminium base, be divided into 3 regions 21 from the bottom to top, 22, 23(as shown in Figure 2), U respectively, V, W alpha region, each region is made up of upper pipe paralleling MOS FET module and lower pipe paralleling MOS FET module, whole parallel three phase circuit has the parallel paralleling MOS FET module of 6 rows, each row's module comprises 10 MOSFET, individual layer aluminium base is divided into 7 electric current doabs by 6 row's paralleling MOS FET modules, be respectively pipe source electrode doab 37 under U phase from bottom to up, in U phase, the lower pipe of pipe source electrode and U phase drains doab 36, U phase and pipe drain electrode doab 35 in V phase, in V phase, pipe source electrode and lower pipe drain doab 34, W phase pipe source electrode doab 33 lower to V phase, in W phase, pipe source electrode and lower pipe drain doab 32, pipe drain electrode doab 31 in W phase, in W phase, in pipe drain electrode doab 31, U phase and V phase, pipe drain electrode doab 35 is furnished with positive electrode current input interface 39 respectively, and under U phase, the pipe doab 33 that drains of pipe source electrode and lower pipe in doab 37, V phase that drains is furnished with cathodal current output interface 38 respectively, in U phase, pipe source electrode and pipe under the U phase doab 32 that drains of pipe source electrode and lower pipe in doab 34, W phase that drains of pipe source electrode and lower pipe in doab 36, V phase that drains is furnished with respectively and exchanges output interface 310.
The parallel three phase circuit layout of individual layer aluminium base is 10 with the quantity of paralleling MOS FET is.As Fig. 2: Q1 to Q20 is the MOSFET of W phase, Q21 to Q40 is the MOSFET of the MOSFET of V phase, Q41 to Q60 position U phase.Wherein these 10 MOSFET parallel connections of Q1 to Q10; These 10 MOSFET parallel connections of Q11 to Q20; These 10 MOSFET parallel connections of Q21 to Q30; These 10 MOSFET parallel connections of Q31 to Q40, these 10 MOSFET parallel connections of Q41 to Q50; These 10 MOSFET parallel connections of Q51 to Q60.Whole aluminium base as shown in Figure 2, can be divided into 3 regions by the distribution of U, V, W phase by Q1 to Q60 on aluminium base, and these 60 MOSFET are symmetrically distributed in these 3 regions.Q1 to Q20 is distributed in W alpha region 23; Q21 to Q40 is distributed in V alpha region 22; Q41 to Q60 is distributed in U alpha region 21.
In fig. 2, give the CURRENT DISTRIBUTION of MOSFET simultaneously, because each phase current trend is identical, make a concrete analysis of the current trend of W phase here:
As shown in Figure 3, the sources connected in parallel of Q1 to Q10 forms pipe drain electrode doab 31 in W phase, the source electrode of Q1 to Q10 and the drain electrode of Q11 to Q20 are connected to form the drain sources connected in parallel of doab 32, Q11 to Q20 of pipe source electrode and lower pipe in W phase and form W phase and the lower pipe source electrode doab 33 of V phase.
The current trend of W phase as shown in Figure 3, electric current flows into pipe drain electrode doab 31 in W phase by laminated bus power positive end, and flow out from pipe source electrode W phase and the lower pipe doab 32 that drains, by conducting block 53 with exchange diversion column 8 input and output alternating current, the power supply negative terminal of W phase and V phase lower pipe source electrode doab 33 laminated bus is connected, and completes electric current and inputs to by " B+ " current circuit that " B-" export.In Fig. 3, in W phase, pipe drain electrode doab 31 and pipe U phase and the V phase in doab 35 that drains is connected by laminated bus, and under W phase and V phase time pipe source electrode doab 33 and U phase, pipe doab 37 is connected by laminated bus.
Fig. 4 is the annexation of aluminium base schematic diagram, corresponding diagram 3.In W phase, the lower pipe source electrode doab 33 of pipe drain electrode doab 31, W phase and V phase, U phase have a pad 38, for welding current input and output conducting strip respectively with pipe drain electrode doab 35, the lower pipe source electrode doab 37 of U phase in V phase as shown in Figure 4; In W phase, pipe source electrode and the lower pipe doab 36 that drains of pipe source electrode and lower pipe in doab 34, U phase that drains of pipe source electrode and lower pipe in doab 32, V phase that drains has 2 symmetrical to be externally connected pad 39, for input and output alternating current respectively.
Described electrical structure comprises: aluminium base direct current input/output structure, alternating current export structure, laminated bus structure and input/output signal structure; MOSFET 511 is welded on the pad of aluminium base Q1-Q60; Aluminium base direct current input/output structure adopts the mode of welding to be connected on the positive electrode current input interface 39 of parallel three phase circuit, cathodal current output interface 38; The mode of alternating current export structure screw fastening is connected on the interchange output interface 310 of parallel three phase circuit; Input and output crimping position 7 screw fastening of laminated bus structure is fitted on direct current input structure; Signal input/output structure is welded on aluminium base, makes U, V, W alpha region 21,22,23 have a signal input output end mouth respectively.
(1) as shown in Figure 1, laminated bus is as 4 in figure, 5,6, be connected with power supply by " 1 diversion column B+ ", " 2 diversion column B-", be fitted on the direct current input structure of parallel three phase circuit 9 by 4 aluminium base input and output crimping position 7 screw fastenings.Electric current passes through " 1 diversion column B+ " through top layer Copper Foil, electric capacity 3 from positive source, flow to 2 " B+ aluminium base input crimping positions " 54,513, be transferred to the MOSFET drain electrode doab of each phase of parallel three phase circuit 9, the MOSFET source doab of each phase of aluminium base, by 2 " B-aluminium base input crimping positions " 512,514, flow to " 2 diversion column B-" through bottom Copper Foil and completes the current circuit of electric current from positive source to power cathode.This structure not only decreases current circuit area, reduces the stray inductance in circuit simultaneously, effectively improves the current capacity of circuit.System has 3 to exchange diversion column 8, for W phase, output baffle 53 is crimped on aluminium base 55 by insulating case 52 by screw 51, crimping pad is square, as shown in Fig. 4 310, exchange diversion column 8 and be crimped on the conductive plane of baffle 53 (in as Fig. 8 shown in 107), for system output AC electric current.System has three signal input output ends, the grid control signal of three-phase six road MOSFET is inputted this power amplifier board by signal input output end mouth 58,59,510 by MOSFET controller signals, to control the enablement and disablement time of each MOSFET, the MOSFET of each parallel connection is controlled by same control signal; Aluminium base 55 is connected with fin 57 by heat-conducting interface material 56.This kind of electrical structure makes production operation simple, and efficiency is high and be easy to realize modularization, makes to connect between each module simple.
(2) described aluminium base direct current input/output structure as shown in Figure 7, adopts copper coin material; One end of copper coin material is provided with the welding plane 91 for welding, welding plane 91 is provided with the multiple flutings 93 for increasing length of invasion, convenient welding exhaust, this fluting effectively can increase the length of invasion of welding, and gas when contributing to large-area welding in soldering paste is discharged, while reducing welding voidage, improve weld strength; The other end of copper coin material is provided with the conductive plane 92 for crimping, conductive plane 92 is provided with the screwed hole 94 installed for screw, and outside input and output electric current is realized on conductive plane 92 by the conductor crimping such as bus, wire and the electric current input and output of module-external.
(3) described alternating current export structure as shown in Figure 5, comprising: conducting block 53, insulating sleeve 52, holding screw 51;
As shown in Figure 8, the side of described conducting block 53 is provided with 2 places for crimping conductive plane 104,105, and conductive plane 104,105 is provided with installing hole 106; The other side of conducting block 53 is provided with 1 place's conductive plane 107, and described conductive plane 107 is provided with screwed hole 108; The outside of described insulating sleeve 52 is multidiameters 109, and the center of multidiameter 109 is provided with installing hole 110, and installing hole 110 is for installing holding screw 51, and multidiameter 109 is for compressing conducting block 53.
(4) described laminated bus structure adopts PCB as DC bus, haves three layers, as shown in Figure 6.Ground floor is top layer Copper Foil 4, and this one deck is top layer conductive layer, and its copper thickness is generally 35-140 μm; The second layer is FR-4 epoxy plate 5, and its thickness is generally at 1.0-2.0mm; Third layer is bottom Copper Foil 6, and this one deck is bottom conductive layer, and its thickness is generally at 35-140 μm.The laminated bus of this kind of structure can weld bus capacitor easily, makes that production operation is simple, efficiency is high and is easy to modularization.
The MOSFET that this parallel three phase circuit is applicable to varying number is in parallel, can mate the drive system of different capacity grade.Can also a calibration power module be regarded by the parallel three phase circuit of above patten's design simultaneously, the parallel three phase circuit in parallel of above structure can be used, only need by corresponding input and output terminal be linked together time in parallel.
This structure of the present invention is on conventional aluminum substrate in a word, is connected as a whole by custom-designed input and output port with laminated bus, can provide larger power density and good thermal balance with less plate area.The present invention includes a kind of technical-constructive design of parallel three phase circuit of individual layer aluminium base, make each doab complete the parallel connection of corresponding MOSFET; A kind of power input structure of aluminium base, direct current input adopts the mode of welding to be connected on aluminium base, adopts the mode of crimping to be connected with laminated bus with screw, makes production operation simple, efficiency is high and be easy to realize modularization, makes to connect between each module simple; A kind of alternating current export structure, adopts the output interface of crimping mode, adopts square pads, exports by the mode of screw fastening, makes production operation simple, and efficiency is high and be easy to realize modularization, makes to connect between each module simple; A structure for laminated bus, utilizes PCB as DC bus, and both positive and negative polarity walks PCB top layer and bottom respectively, repeatability very high between both positive and negative polarity; A kind of input/output signal structural design, makes the MOSFET of each brachium pontis be used alone a connector; For a MOSFET layout for individual layer aluminium base electrical property feature design, the output current of monolithic aluminium base is made to reach 400Arms.
Non-elaborated part of the present invention belongs to techniques well known.
Utilize technical solutions according to the invention, or those skilled in the art being under the inspiration of technical solution of the present invention, designing similar technical scheme, and reach above-mentioned technique effect, is all fall into protection scope of the present invention.
Claims (5)
1. a power driven system, is characterized in that: the parallel three phase circuit and the electrical structure that comprise individual layer aluminium base;
The parallel three phase circuit of described individual layer aluminium base comprises: on individual layer aluminium base, and being divided into 3 regions is from the bottom to top U, V, W alpha region respectively, and each region is made up of upper pipe paralleling MOS FET module and lower pipe paralleling MOS FET module; Whole parallel three phase circuit has the parallel paralleling MOS FET module of 6 rows, each row's module comprises 10 MOSFET, individual layer aluminium base is divided into 7 electric current doabs by 6 row paralleling MOS FET modules, to be respectively U phase under the pipe in doab, W phase that drains of pipe source electrode and lower pipe in pipe source electrode doab, W phase that to drain under doab, W phase and V phase of pipe source electrode and lower pipe in doab 35, V phase that drains of pipe in doab, U phase and V phase that drains of pipe source electrode and U phase time pipe in pipe source electrode doab, U phase from bottom to up and to drain doab; In W phase, in pipe drain electrode doab, U phase and V phase, pipe drain electrode doab is furnished with positive electrode current input interface respectively, and under U phase, the pipe doab that drains of pipe source electrode and lower pipe in doab, V phase that drains is furnished with cathodal current output interface respectively; In U phase, pipe source electrode and pipe under the U phase doab that drains of pipe source electrode and lower pipe in doab, W phase that drains of pipe source electrode and lower pipe in doab, V phase that drains is furnished with respectively and exchanges output interface;
Described electrical structure comprises: aluminium base direct current input/output structure, alternating current export structure, laminated bus structure and input/output signal structure; Aluminium base direct current input/output structure adopts the mode of welding to be connected on the positive electrode current input interface of parallel three phase circuit, cathodal current output interface; The mode of alternating current export structure screw fastening is connected on the interchange output interface of parallel three phase circuit; The input and output crimping position screw fastening of laminated bus structure is fitted on direct current input structure; Signal input/output structure is welded on aluminium base, makes U, V, W alpha region have a signal input output end mouth respectively.
2. power driven system according to claim 1, is characterized in that: described aluminium base direct current input/output structure adopts copper coin material; One end of copper coin material is provided with the welding plane for welding, and welding plane is provided with the multiple flutings for increasing length of invasion, convenient welding exhaust; The other end of copper coin material is provided with the conductive plane for crimping, and conductive plane is provided with the screwed hole installed for screw, and outside input and output electric current is realized on conductive plane by conductor crimping and the electric current input and output of module-external.
3. power driven system according to claim 1, is characterized in that: described alternating current export structure comprises conducting block, insulating sleeve and holding screw; The side of described conducting block is provided with the conductive plane of two places for crimping, and two place's conductive planes are equipped with installing hole; The other side of conducting block is provided with place's conductive plane, and described conductive plane is provided with screwed hole; The outside of described insulating sleeve is a multidiameter, and the center of multidiameter is provided with installing hole, and installing hole is for installing holding screw, and multidiameter is for compressing conducting block.
4. power driven system according to claim 1, is characterized in that: described laminated bus structure adopts PCB as DC bus, and laminated bus structure is provided with three layers, and ground floor is top layer Copper Foil, and the second layer is FR-4 epoxy plate, and third layer is bottom Copper Foil.
5. power driven system according to claim 1, is characterized in that: described input/output structure makes each phase of three-phase drive circuit use a signal input output end mouth respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510146796.6A CN104734535A (en) | 2015-03-31 | 2015-03-31 | Power drive system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510146796.6A CN104734535A (en) | 2015-03-31 | 2015-03-31 | Power drive system |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103560682A (en) * | 2013-07-31 | 2014-02-05 | 佟炳然 | Power driving system |
| CN103582408A (en) * | 2013-07-31 | 2014-02-12 | 刘杰 | MOSFET parallel circuit layout |
| CN203445262U (en) * | 2013-07-31 | 2014-02-19 | 佟炳然 | Current input output structure |
| CN203553389U (en) * | 2013-07-31 | 2014-04-16 | 琚龙 | Current input-output structure |
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2015
- 2015-03-31 CN CN201510146796.6A patent/CN104734535A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103560682A (en) * | 2013-07-31 | 2014-02-05 | 佟炳然 | Power driving system |
| CN103582408A (en) * | 2013-07-31 | 2014-02-12 | 刘杰 | MOSFET parallel circuit layout |
| CN203445262U (en) * | 2013-07-31 | 2014-02-19 | 佟炳然 | Current input output structure |
| CN203553389U (en) * | 2013-07-31 | 2014-04-16 | 琚龙 | Current input-output structure |
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Application publication date: 20150624 |
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