CN104733868A - Low-profile circuit analog absorber based on dipole array - Google Patents
Low-profile circuit analog absorber based on dipole array Download PDFInfo
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- CN104733868A CN104733868A CN201310713526.XA CN201310713526A CN104733868A CN 104733868 A CN104733868 A CN 104733868A CN 201310713526 A CN201310713526 A CN 201310713526A CN 104733868 A CN104733868 A CN 104733868A
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Abstract
The invention discloses a low-profile circuit analog absorber based on a dipole array. By the adoption of an inductive ground plane method which can effectively reduce the thickness of the circuit analog absorber based on the dipole array, the thickness of the absorber can be effectively reduced, and the work bandwidth of an original structure can be broadened. The inductive ground plane method is based on the classical transmission line theory, a short circuit patch array is loaded at the center and introduced between a dipole array circuit and the ground plane, in this way, a common ground plane is converted into an inductive ground plane, and therefore the thickness of the circuit analog absorber is effectively reduced. In addition, through the coupling function between the inductive ground plane and reactive components of a surface circuit, the work bandwidth of the absorber can be broadened. The technology of the low-profile circuit analog absorber is mainly achieved through the short circuit patch array, the structure is simple, the common PCB technology is adopted, processing is easy, the cost and the weight are relatively small, and therefore the technology can be applied to the design of the circuit analog absorbers on a large scale.
Description
Technical field
The present invention relates to a kind of electro-magnetic wave absorption circuit, particularly a kind of low section Circuit analogous absorber based on dipole for electromagnetic compatibility and radar absorbing material.
Background technology
The safety research of electronic equipment in electromagnetic environment, comes from the research of the electromagnetic information anti-leak of military equipment the earliest, is called TEMPEST technology (electromagnetic information leakage guard technology).Along with civil electronic information products extensive use and update fast, the electromagnetic environment fail safe of electronic equipment also receives publicity.With TEMPEST technology unlike, not just self the information leakage problem that civil electronic information products are mainly considered, but whether the electromagnetic field of outside can affect the normal work of equipment of itself, and whether the electromagnetic wave self distributed can affect the normal work of other electronics and IT products.In addition, along with the modern times scout and the improving constantly of Detection Techniques level, higher requirement be it is also proposed to the performance of radar absorbing.
The use of electromagnetic wave absorb realizes shielding electromagnetic wave not disturb miscellaneous equipment and not by a kind of effective means that miscellaneous equipment disturbs.Different according to its mechanism of action, the research of absorber is mainly divided into two large classes: a kind of is research to new material, such as absorbent, the design of the composite materials such as absorbing material and the utilization of Meta Materials, wherein the utilization of Meta Materials can realize the very low absorber of section usually, but its bandwidth is very narrow; Another is exactly the design based on Circuit theory, such as wire netting, and Salisbury shields, Jaumann absorber and complex impedance Circuit analogous absorber.At present, the research to resistive material being focused on to the research of Circuit analogous absorber, by designing the resistive film of difformity and different resistance value, realizing the absorption to incident electromagnetic wave.For this type of absorber, if wish to obtain more satisfactory absorbent properties in wider bandwidth, then the Main Means taked is the number of plies increasing absorbed layer, but this not only can increase the cost of making, and the volume and weight of absorber also can be made to increase.
Therefore, the implementation method more complicated of prior art, and be difficult to the microwave-absorbing body that simultaneously realizes not only there is wide bandwidth of operation but also there is low section characteristic.
Summary of the invention
Technical problem solved by the invention is to provide a kind of low section Circuit analogous absorber based on dipole, and it effectively can not only reduce the former thickness based on quarter-wave Circuit analogous absorber, the bandwidth of operation of all right effectively broadening absorber.
The technical solution realizing the object of the invention is: a kind of low section Circuit analogous absorber based on dipole array, comprise some absorber unit, above-mentioned absorber unit is arranged with square grid form two-dimension periodic, forming array, each absorber unit includes dipole, film patch resistance, upper layer medium substrate, square type Metal paster, layer dielectric substrate, metallic plate, the first plated-through hole, the second plated-through hole;
The bottom of layer dielectric substrate arranges metallic plate, square metal patch is set in the middle part of layer dielectric upper surface of base plate, layer dielectric substrate has the first plated-through hole, the second plated-through hole, these two plated-through holes are positioned at the both sides of square type Metal paster, the top of layer dielectric substrate arranges upper layer medium substrate, the upper surface middle part of upper layer medium substrate arranges dipole, the middle part of dipole arranges film patch resistance, and the bearing of trend of dipole parallels with two plated-through hole circle center line connectings.
The DIELECTRIC CONSTANT ε of upper layer medium substrate and layer dielectric substrate
rbe 2.2 ~ 10.2; The gross thickness of two-layered medium substrate is
wherein λ
0for the wavelength at free space, wherein the thickness of layer dielectric substrate is 0.5mm ~ 1mm.
Upper layer medium substrate is identical with the dielectric material of layer dielectric substrate.
The length of side of square type Metal paster is
wherein N is [0.75,0.80], λ
0for the wavelength at free space, ε
rfor dielectric constant, the diameter of two plated-through holes is 0.5mm.
The width of dipole is a thirtieth of its length, for
The resistance of film patch resistance is greater than the input impedance value of dipole.
Width between adjacent two absorber unit is
λ
0for the wavelength at free space, ε
rfor dielectric constant.
The present invention compared with prior art, its remarkable advantage is: 1) the low section Circuit analogous absorber based on dipole structure of the present invention's proposition, thickness only has 1/7th of guide wavelength, compared with the structure of common individual layer Circuit analogous absorber, and reduced down in thickness nearly 45%; Meanwhile, bandwidth ratio is based on the common dipole subarray absorber broadening nearly 110% of common ground plane; 2) the low section Circuit analogous absorber based on dipole structure of the present invention's proposition, although have employed double-deck circuit structure, but use common plastic screw just can be fixed and not change its operating characteristic, coordinate the use of film patch resistance, structure is simple, handling ease, and cost and weight are all relatively little, thus can large-scale production; In addition, also can with other technologies, such as mems switch technology combines, and designs to have reception, launch and the radar system parts of the function such as absorption.
Below in conjunction with accompanying drawing, the present invention is described in further detail.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of dipole of the present invention and upper layer medium substrate.
Fig. 2 is the schematic diagram of square type Metal paster of the present invention, plated-through hole and layer dielectric substrate.
Fig. 3 is the schematic diagram of square type Metal paster of the present invention, plated-through hole and metallic plate.
Fig. 4 is the vertical view of the low section Circuit analogous absorber structure based on dipole.
Embodiment
Composition graphs 1, Fig. 2, Fig. 3 and Fig. 4, the low section Circuit analogous absorber of one of the present invention, comprise some absorber unit, above-mentioned absorber unit is arranged with square grid form two-dimension periodic, forming array, each absorber unit includes dipole 1, film patch resistance 2, upper layer medium substrate 3, square type Metal paster 4, layer dielectric substrate 5, metallic plate 6, first plated-through hole 7, second plated-through hole 8;
The bottom of layer dielectric substrate 5 arranges metallic plate 6, layer dielectric substrate 5 upper surface middle part arranges square metal patch 4, layer dielectric substrate 5 has the first plated-through hole 7, second plated-through hole 8, these two plated-through holes are positioned at the both sides of square type Metal paster 4, the top of layer dielectric substrate 5 arranges upper layer medium substrate 3, the upper surface middle part of upper layer medium substrate 3 arranges dipole 1, the middle part of dipole 1 arranges film patch resistance 2, and the bearing of trend of dipole 1 parallels with two plated-through hole circle center line connectings.
The DIELECTRIC CONSTANT ε of upper layer medium substrate 3 and layer dielectric substrate 5
rbe 2.2 ~ 10.2; The gross thickness of two-layered medium substrate is
wherein λ
0for the wavelength at free space, wherein the thickness of layer dielectric substrate 5 is 0.5mm ~ 1mm.
Upper layer medium substrate 3 is identical with the dielectric material of layer dielectric substrate 5.
The length of side of square type Metal paster 4 is
wherein N is [0.75,0.80], λ
0for the wavelength at free space, ε
rfor dielectric constant, the diameter of two plated-through holes is 0.5mm.
The width of dipole 1 is a thirtieth of its length, for
The resistance of film patch resistance 2 is greater than the input impedance value of dipole 1.
Width between adjacent two absorber unit is
λ
0for the wavelength at free space, ε
rfor dielectric constant.
Refinement explanation is carried out to the details of concrete device of the present invention and working condition below.
The width of dipole 1 is 0.8mm, and length is 10.8mm; Dipole 1 medium position loads film patch resistance 2, and its encapsulation model is 0603, and resistance is 110 Ω; Be that periodic unit carries out two dimension and arranges and be printed in upper layer medium substrate 3 with said structure, wherein periodic unit is of a size of 11.8mm*11.8mm, and the dielectric constant of upper layer medium substrate 3 is 2.65, and thickness is 3mm; The length of side of square type Metal paster 4 is 8mm, and the spacing of adjacent two square type Metal pasters 4 is 11.8mm, and form periodic array in two dimensions and be printed on layer dielectric substrate 5, wherein the dielectric constant of layer dielectric substrate 5 is 2.65, and thickness is 0.5mm; On layer dielectric substrate 5 respectively under open the first plated-through hole 7 and the second plated-through hole 8, two plated-through holes are positioned at the both sides of square type Metal paster 4, the circle center line connecting of two through holes is identical with the bearing of trend of dipole 1, and the diameter of two plated-through holes is 0.5mm.
This example comprises 18*18 periodic unit, and overall cross sectional dimensions is 212.4mm*212.4mm, and gross thickness is 3.5mm, and total weight is 363 grams.Through numerical computations and actual test, when in electromagnetic wave vertical incidence to sample, absorptivity be 90% band limits be 8.05GHz-13.65GHz, relative bandwidth is 52%.
Below the preparation process of the low section Circuit analogous absorber that the present invention is based on dipole is described in detail:
(1) first, the centre frequency of Circuit analogous absorber and the parameter of two layer medium substrate is determined, mainly dielectric constant.(2) according to the dielectric constant of center operating frequency and medium substrate, determining equivalent operation wavelength, determine the length of dipole antenna, is the half of effective wavelength under normal circumstances.
(3) according to the main mould of periodic structure to the requirement of cell size, the width of determining unit, is generally 1.05 times of equivalent half-wavelength, and the Chip-R value of center loaded is the radiation resistance of dipole antenna and the coupling resistance sum of surrounding cells.(4) it is identical that the cycle forming the metal patch array of perceptual ground plane and step (3) obtain, and the length of side of metal patch then equals the 75%-80% of equivalent half-wavelength; According to concrete machining accuracy, determine the size of plated-through hole diameter, generally get 0.5mm; The thickness of medium substrate is 0.5mm, all metallizes in its bottom surface.
(5) thickness based on the low section Circuit analogous absorber of dipole is 1/7th of effective wavelength, and therefore the thickness of upper strata circuit is
wherein λ
0for the wavelength at free space, ε
rfor dielectric constant.
As from the foregoing, the present invention designs the requirement of low section for adapting to electromagnetic wave absorb, and considers based on the too narrow problem of dipole array Circuit analogous absorber bandwidth, therefore adopts perceptual ground plane technology.Thickness based on the low section Circuit analogous absorber of dipole only has about 1/7th of equivalent operation wavelength, the more former quarter-wave electric absorption body reduction nearly 45% of thickness; And bandwidth of operation can reach 52%, simulate bandwidth of operation (about 21%) broadening of absorber nearly 110% than the circuit common based on dipole.
Claims (7)
1. one kind low section Circuit analogous absorber, it is characterized in that, comprise some absorber unit, above-mentioned absorber unit is arranged with square grid form two-dimension periodic, forming array, each absorber unit includes dipole [1], film patch resistance [2], upper layer medium substrate [3], square type Metal paster [4], layer dielectric substrate [5], metallic plate [6], the first plated-through hole [7], the second plated-through hole [8];
The bottom of layer dielectric substrate [5] arranges metallic plate [6], layer dielectric substrate [5] upper surface middle part arranges square metal patch [4], layer dielectric substrate [5] has the first plated-through hole [7], second plated-through hole [8], these two plated-through holes are positioned at the both sides of square type Metal paster [4], the top of layer dielectric substrate [5] arranges upper layer medium substrate [3], the upper surface middle part of upper layer medium substrate [3] arranges dipole [1], the middle part of dipole [1] arranges film patch resistance [2], the bearing of trend of dipole [1] parallels with two plated-through hole circle center line connectings.
2. low section Circuit analogous absorber according to claim 1, is characterized in that, the DIELECTRIC CONSTANT ε of upper layer medium substrate [3] and layer dielectric substrate [5]
rbe 2.2 ~ 10.2; The gross thickness of two-layered medium substrate is
wherein λ
0for the wavelength at free space, wherein the thickness of layer dielectric substrate [5] is 0.5mm ~ 1mm.
3. low section Circuit analogous absorber according to claim 2, is characterized in that, upper layer medium substrate [3] is identical with the dielectric material of layer dielectric substrate [5].
4. low section Circuit analogous absorber according to claim 1 and 2, is characterized in that, the length of side of square type Metal paster [4] is
wherein N is [0.75,0.80], λ
0for the wavelength at free space, ε
rfor dielectric constant, the diameter of two plated-through holes is 0.5mm.
5. low section Circuit analogous absorber according to claim 1 and 2, is characterized in that, the width of dipole [1] is a thirtieth of its length, for
6. low section Circuit analogous absorber according to claim 1 and 2, is characterized in that, the resistance of film patch resistance [2] is greater than the input impedance value of dipole [1].
7. low section Circuit analogous absorber according to claim 1 and 2, is characterized in that, the width between adjacent two absorber unit is
λ
0for the wavelength at free space, ε
rfor dielectric constant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201310713526.XA CN104733868A (en) | 2013-12-20 | 2013-12-20 | Low-profile circuit analog absorber based on dipole array |
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| CN201310713526.XA CN104733868A (en) | 2013-12-20 | 2013-12-20 | Low-profile circuit analog absorber based on dipole array |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2781764C1 (en) * | 2021-12-09 | 2022-10-17 | Акционерное общество "Российская корпорация ракетно-космического приборостроения и информационных систем" (АО "Российские космические системы") | Planar microwave absorbing structure and method for its manufacture |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1856906A (en) * | 2003-08-04 | 2006-11-01 | 哈里公司 | Phased array antenna absorber and associated methods |
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2013
- 2013-12-20 CN CN201310713526.XA patent/CN104733868A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1856906A (en) * | 2003-08-04 | 2006-11-01 | 哈里公司 | Phased array antenna absorber and associated methods |
Non-Patent Citations (1)
| Title |
|---|
| YUMEI CHANG等: "《Dipole array absorbing surface made thin and wideband with inductive ground》", 《PROCEEDINGS OF ASIA-PACIFIC MICROWAVE CONFERENCE 2011》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2781764C1 (en) * | 2021-12-09 | 2022-10-17 | Акционерное общество "Российская корпорация ракетно-космического приборостроения и информационных систем" (АО "Российские космические системы") | Planar microwave absorbing structure and method for its manufacture |
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Application publication date: 20150624 |