CN104733335B - For detecting the comparison seat calibration method of wafer - Google Patents
For detecting the comparison seat calibration method of wafer Download PDFInfo
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- CN104733335B CN104733335B CN201310703377.9A CN201310703377A CN104733335B CN 104733335 B CN104733335 B CN 104733335B CN 201310703377 A CN201310703377 A CN 201310703377A CN 104733335 B CN104733335 B CN 104733335B
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Abstract
A kind of comparison seat calibration method for being used to detect wafer, is comprised the steps of：Obtain the coordinate of multiple light shield crystal grain of corresponding wafer.Calculating light shield crystal grain using the coordinate of light shield crystal grain, any one arrives multiple first distances of other light shield crystal grain.According to the position data for scanning wafer, multiple blank crystal grain are found.Blank crystal grain and light shield crystal grain are compared according to the first distance, meet number to obtain multiple comparisons.When comparing the soprano for meeting number generation, the coordinate of light shield crystal grain is utilized to obtain the coordinate of blank crystal grain.Calculate the coordinate of one of blank crystal grain and with reference to the second distance between coordinate.According to second distance adjustment with reference to coordinate with the coordinate of these corresponding light shield crystal grain.
Description
Technical field
The present invention is a kind of relevant comparison seat calibration method, and more particularly to a kind of comparison coordinate for being used to detect wafer
Method.
Background technology
It is known with automatic optical detection device (Automated Optical Inspection；AOI the crystalline substance of wafer) is detected
During grain, the light shield die locations that need to be provided with light shield shelves compare the blank die locations of wafer.However, the system of wafer before detection
The situation of fragmentation or deficient purchase can occur unavoidably for journey, cause the quantity of the blank crystal grain of wafer to become more so that light shield crystal grain
The position of the blank crystal grain of position and wafer compares failure.
Therefore, technical staff need to specify the position of blank crystal grain in a manual fashion, could allow problematic wafer (such as
The wafer of part fragmentation) continue to impose follow-up processing procedure after sensing.However, the position of blank crystal grain is specified in a manual manner
Easily occur to specify wrong situation, can not only expend substantial amounts of detection time, also result in qualification rate and be difficult to be lifted.
The content of the invention
The purpose of the present invention is a kind of comparison seat calibration method for being used to detect wafer of offer.
According to an embodiment of the present invention, a kind of comparison seat calibration method for being used to detect wafer, is comprised the steps of：
(a) coordinate of multiple light shield crystal grain of corresponding wafer is obtained.(b) calculate light shield crystal grain using the coordinate of light shield crystal grain any one is arrived
Multiple first distances of other light shield crystal grain.(c) according to the position data for scanning wafer, multiple blank crystal grain are found.(d) basis
First distance compares blank crystal grain and light shield crystal grain, meets number to obtain multiple comparisons.(e) when comparison meets the highest of number
When person produces, the coordinate of blank crystal grain is obtained using the coordinate of light shield crystal grain.(f) coordinate and ginseng of one of blank crystal grain are calculated
Examine the second distance between coordinate.(g) coordinate is referred to the coordinate of corresponding light shield crystal grain according to second distance adjustment.
In an embodiment of the present invention, above-mentioned steps (c) include：The positional number for scanning wafer is obtained from a ranging sequence
According to.
In an embodiment of the present invention, above-mentioned steps (d) include：Mobile light shield crystal grain makes light shield brilliant to blank crystal grain
At least one of grain is overlapping with one of blank crystal grain.
In an embodiment of the present invention, above-mentioned steps (e) include：Sequence comparison meets number.
In an embodiment of the present invention, above-mentioned steps (e) include：Record compares the soprano's generation time for meeting number
The location status of cover crystal grain and blank crystal grain.
In an embodiment of the present invention, above-mentioned steps (c) include：Wafer is scanned using automatic optical detection device.
In an embodiment of the present invention, above-mentioned steps (g) include：The photo-sensitive cell of automatic optical detection device is according to ginseng
Examine the origin crystal grain that coordinate is moved to wafer.
In an embodiment of the present invention, above-mentioned steps (b) include：Recording light shield crystal grain, any one arrives other light shield crystal grain
The first distance.
In an embodiment of the present invention, in above-mentioned steps (c), the quantity of blank crystal grain and the quantity phase of light shield crystal grain
Together.
In an embodiment of the present invention, in above-mentioned steps (e), the soprano that comparison meets number is equal to blank crystal grain
Quantity.
In the above-mentioned embodiment of the present invention, because the coordinate of light shield crystal grain can calculate light shield crystal grain, any one arrives other
First distance of light shield crystal grain, and the first distance can be used to compare blank crystal grain and light shield crystal grain, meet number most when comparing
When high person produces, the position correspondence of blank crystal grain and light shield crystal grain is represented, therefore the coordinate of light shield crystal grain can be utilized to obtain blank
The coordinate of crystal grain.Consequently, it is possible to which the second distance between the coordinate and reference coordinate of blank crystal grain can be calculated, and refer to coordinate
It can be adjusted according to second distance to meet the coordinate of the light shield crystal grain.The comparison seat calibration method of the present invention can be by light shield crystal grain
Coordinate obtain the coordinate of blank crystal grain, and the coordinate of blank crystal grain can be obtained in an automated way, allow wafer after sensing may be used
Obtain and used with reference to coordinate for follow-up processing procedure.Therefore, detection time can be saved and lifts the qualification rate of wafer.
Brief description of the drawings
Fig. 1 illustrates the flow chart of comparison seat calibration method according to an embodiment of the present invention；
Fig. 2 illustrates the top view of wafer according to an embodiment of the present invention；
Fig. 3 illustrates the top view of light shield according to an embodiment of the present invention；
Fig. 4 illustrates one of Fig. 3 light shield crystal grain to the schematic diagram of the first distance of other light shield crystal grain；
Fig. 5 illustrates the another one of Fig. 3 light shield crystal grain to the schematic diagram of the first distance of other light shield crystal grain；
Fig. 6 illustrates schematic diagram of the one to the first distance of other light shield crystal grain again of Fig. 3 light shield crystal grain；
Schematic diagram when the light shield crystal grain of blank crystal grain and Fig. 3 that Fig. 7 illustrates Fig. 2 compares；
Schematic diagram when the light shield crystal grain of blank crystal grain and Fig. 3 that Fig. 8 illustrates Fig. 2 compares；
Schematic diagram when the light shield crystal grain of blank crystal grain and Fig. 3 that Fig. 9 illustrates Fig. 2 compares；
Schematic diagram when Figure 10 illustrates Fig. 9 blank crystal grain and calculated with reference to the second distance between coordinate.
Embodiment
Multiple embodiments of the present invention, as clearly stated, the details in many practices will be disclosed with accompanying drawing below
It will be explained in the following description.It should be appreciated, however, that the details in these practices is not applied to limit the present invention.Also
It is to say, in some embodiments of the present invention, the details in these practices is non-essential.In addition, for the sake of simplifying accompanying drawing, one
A little known usual structures will be illustrated in a manner of simply illustrating in the accompanying drawings with element.
Fig. 1 illustrates the flow chart of comparison seat calibration method according to an embodiment of the present invention.As illustrated, for detecting
The comparison seat calibration method of wafer, is comprised the steps of：First in step sl, multiple light shield crystal grain of corresponding wafer are obtained
Coordinate.Then in step s 2, using the coordinate of light shield crystal grain calculate light shield crystal grain any one to the multiple of other light shield crystal grain
First distance.Afterwards in step s3, according to the position data for scanning wafer, multiple blank crystal grain are found.Then in step S4
In, blank crystal grain and light shield crystal grain are compared according to the first distance, meet number to obtain multiple comparisons.Afterwards in step s 5,
When comparing the soprano for meeting number generation, the coordinate of light shield crystal grain is utilized to obtain the coordinate of blank crystal grain.Then in step
In S6, the coordinate of one of blank crystal grain is calculated and with reference to the second distance between coordinate.Finally in the step s 7, according to second away from
From adjustment with reference to coordinate with the coordinate of corresponding (meeting) light shield crystal grain.At present the wafer of part fragmentation can not automated job, be
Because part fragmentation has the doubt to mistake point with complete slice, it is necessary to which, by manual confirmation, the technology via the present invention can overcome
This problem, make all products (containing complete slice and fragmentation) automated job.
In the following description, it will be explained in detail above steps.
Fig. 2 illustrates the top view of wafer 110 according to an embodiment of the present invention.Fig. 3 illustrates to be implemented according to the present invention one
The top view of the light shield 120 of mode.Refer to Fig. 2 and Fig. 3 simultaneously, wafer 110 with multiple blank crystal grain 112a, 112b, 112c,
112d.Blank crystal grain 112a, 112b, 112c, 112d may be, for example, hole area or fragmentation area.Light shield 120 has multiple light shields brilliant
Grain 122a, 122b, 122c, 122d.In Fig. 1 steps S1, the light shield crystal grain of the light shield 120 of corresponding wafer 110 can be first obtained
122a, 122b, 122c, 122d coordinate.Wherein, light shield crystal grain 122a, 122b, 122c, 122d coordinate can be by the manufacturers of wafer 110
The light shield shelves of offer obtain, or survey shelves by the point of wafer 110 and obtain.
Then in Fig. 1 steps S2, light shield crystal grain 122a is calculated to other light shields using light shield crystal grain 122a coordinate
Crystal grain 122b, 122c, 122d multiple first distance d1, d2, d3.Wherein, the first distance d1 is light shield crystal grain 122a and light shield
The distance between crystal grain 122b, the first distance d2 are the distance between light shield crystal grain 122a and light shield crystal grain 122c, the first distance
D3 is the distance between light shield crystal grain 122a and light shield crystal grain 122d.
Fig. 4 illustrate Fig. 3 light shield crystal grain 122b to other light shield crystal grain 122a, 122c, 122d first distance d4, d5,
D6 schematic diagram.Similarly, using light shield crystal grain 122b coordinate calculate light shield crystal grain 122b to other light shield crystal grain 122a,
122c, 122d multiple first distance d4, d5, d6.Wherein, the first distance d4 be light shield crystal grain 122b and light shield crystal grain 122a it
Between distance, the first distance d5 is the distance between light shield crystal grain 122b and light shield crystal grain 122c, and the first distance d6 is that light shield is brilliant
Grain the distance between 122b and light shield crystal grain 122d.
Fig. 5 illustrate Fig. 3 light shield crystal grain 122c to other light shield crystal grain 122a, 122b, 122d first distance d7, d8,
D9 schematic diagram.Similarly, using light shield crystal grain 122c coordinate calculate light shield crystal grain 122c to other light shield crystal grain 122a,
122b, 122d multiple first distance d7, d8, d9.Wherein, the first distance d7 be light shield crystal grain 122c and light shield crystal grain 122a it
Between distance, the first distance d8 is the distance between light shield crystal grain 122c and light shield crystal grain 122b, and the first distance d9 is that light shield is brilliant
Grain the distance between 122c and light shield crystal grain 122d.
Fig. 6 illustrate Fig. 3 light shield crystal grain 122d to other light shield crystal grain 122a, 122b, 122c the first distance d10,
D11, d12 schematic diagram.Similarly, light shield crystal grain 122d is calculated to other light shield crystal grain using light shield crystal grain 122d coordinate
122a, 122b, 122c multiple first distance d10, d11, d12.Wherein, the first distance d10 is light shield crystal grain 122d and light shield
The distance between crystal grain 122a, the first distance d11 are the distance between light shield crystal grain 122d and light shield crystal grain 122b, the first distance
D12 is the distance between light shield crystal grain 122d and light shield crystal grain 122c.
First distance d1~d12 depicted in Fig. 3 to Fig. 5, can be recorded.
Refering to Fig. 2, then in Fig. 1 steps S3, blank crystal grain can be found according to the position data for scanning wafer 110
112a、112b、112c、112d.In this step, automatic optical detection device (Automated Optical can be used
Inspection；AOI wafer 110) is scanned, and the position data for scanning wafer 110 is obtained from a ranging sequence.In present embodiment
In, the light shield crystal grain 122a of blank crystal grain 112a, 112b, 112c, 112d of wafer 110 quantity and Fig. 3 light shield 120,
122b, 122c, 122d quantity are identical, are four, but be not intended to limit the invention.
Fig. 7 illustrate Fig. 2 blank crystal grain 112a, 112b, 112c, 112d and Fig. 3 light shield crystal grain 122a, 122b, 122c,
Schematic diagram when 122d is compared.Then in Fig. 1 steps S4, can be compared according to first distance d1~d12 blank crystal grain 112a,
112b, 112c, 112d and light shield crystal grain 122a, 122b, 122c, 122d, meet number to obtain multiple comparisons.When comparison blank
Crystal grain 112a, 112b, 112c, 112d and during light shield crystal grain 122a, 122b, 122c, 122d, light shield crystal grain 122a, 122b,
122c, 122d are movable to blank crystal grain 112a, 112b, 112c, 112d, make light shield crystal grain 122a, 122b, 122c, 122d
At least one is overlapping with one of blank crystal grain 112a, 112b, 112c, 112d.
In the present embodiment, light shield crystal grain 122d is overlapping with blank crystal grain 112a, remaining light shield crystal grain 122a, 122b,
122c is not overlapping with blank crystal grain 112b, 112c, 112d, therefore compares and meet number for 1.
Fig. 8 illustrate Fig. 2 blank crystal grain 112a, 112b, 112c, 112d and Fig. 3 light shield crystal grain 122a, 122b, 122c,
Schematic diagram when 122d is compared.In the present embodiment, light shield crystal grain 122b is overlapping with blank crystal grain 112a, and light shield crystal grain
122d is overlapping with blank crystal grain 112c.Remaining light shield crystal grain 122a, 122c be not overlapping with blank crystal grain 112b, 112d, therefore compares
To meeting number for 2.
Fig. 9 illustrate Fig. 2 blank crystal grain 112a, 112b, 112c, 112d and Fig. 3 light shield crystal grain 122a, 122b, 122c,
Schematic diagram when 122d is compared.In the present embodiment, light shield crystal grain 122a is overlapping with blank crystal grain 112a, light shield crystal grain 122b
Overlapping with blank crystal grain 112b, light shield crystal grain 122c is overlapping with blank crystal grain 112c, and light shield crystal grain 122d and blank crystal grain
112d is overlapping.Therefore, compare and meet number for 4.
Due to light shield crystal grain 122a, 122b of blank crystal grain 112a, 112b, 112c, 112d quantity and light shield 120,
122c, 122d quantity are four, therefore comparison meets number and may include 1 time (as shown in Figure 7), 2 times (as shown in Figure 8)
With the situation such as 4 times (as shown in Figure 9), and these situations can be sorted.In Fig. 1 steps S5, meet number most when comparing
When high person produces, can be obtained using light shield crystal grain 122a, 122b, 122c, 122d coordinate blank crystal grain 112a, 112b,
112c, 112d coordinate, with record compare meet number soprano produce when light shield crystal grain 122a, 122b, 122c, 122d with
Blank crystal grain 112a, 112b, 112c, 112d location status.When comparing the soprano for meeting number generation, represent that blank is brilliant
Grain 112a, 112b, 112c, 112d and light shield crystal grain 122a, 122b, 122c, 122d position correspondence.In the present embodiment,
It is 4 that comparison, which meets number soprano, can be equal to blank crystal grain 112a, 112b, 112c, 112d quantity.
Figure 10 illustrate Fig. 9 blank crystal grain 112a, 112b, 112c, 112d and with reference to the second distance D1 between coordinate 132,
Schematic diagram when D2, D3, D4 are calculated.After the coordinate for obtaining blank crystal grain 112a, 112b, 112c, 112d, in Fig. 1 steps S6
In, the second distance D1 between blank crystal grain 112a coordinate and the reference coordinate 132 of wafer 110 can be calculated, calculate blank crystalline substance
Second distance D2, calculating blank crystal grain 112c coordinate and wafer between grain 112b coordinate and the reference coordinate 132 of wafer 110
Second distance D3 between 110 reference coordinate 132 is with calculating blank crystal grain 112d coordinate and the reference coordinate 132 of wafer 110
Between second distance D4.
Finally in Fig. 1 steps S7, it can be adjusted according to second distance D1, D2, D3, D4 and refer to coordinate 132, with corresponding
(meeting) light shield crystal grain 122a, 122b, 122c, 122d coordinate, and it is origin crystal grain to specify with reference to coordinate 132.Consequently, it is possible to
The photo-sensitive cell of automatic optical detection device can be according to the origin crystal grain that wafer 110 is moved to reference to coordinate 132.
The present invention is used for the comparison seat calibration method and known art for detecting wafer, due to the coordinate energy of light shield crystal grain
Calculating light shield crystal grain, any one arrives the first distance of other light shield crystal grain, and the first distance can be used to compare blank crystal grain and light
Cover crystal grain, when comparing the soprano for meeting number generation, the position correspondence of blank crystal grain and light shield crystal grain is represented, therefore can profit
The coordinate of blank crystal grain is obtained with the coordinate of light shield crystal grain.Consequently, it is possible to second between the coordinate and reference coordinate of blank crystal grain
Distance can be calculated, and can be adjusted with reference to coordinate according to second distance to meet the coordinate of the light shield crystal grain.Compare coordinate
Method the coordinate of blank crystal grain can be obtained by the coordinate of light shield crystal grain, and blank crystal grain can be obtained in a manner of automated job
Coordinate, wafer can be obtained using for follow-up processing procedure with reference to coordinate after sensing.Therefore, detection time can be saved and lifted
The qualification rate of wafer.
Although the present invention is disclosed above with embodiment, so it is not limited to the present invention, any to be familiar with this skill
Person, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations, therefore protection scope of the present invention is worked as
It is defined depending on the scope of which is defined in the appended claims.
Claims (10)
1. a kind of comparison seat calibration method for being used to detect wafer, it is characterised in that comprise the steps of：
(a) coordinate of multiple light shield crystal grain of a corresponding wafer is obtained；
(b) using the coordinate of the light shield crystal grain calculate the light shield crystal grain any one to multiple the of other light shield crystal grain
One distance；
(c) according to the position data for scanning the wafer, multiple blank crystal grain are found；
(d) the blank crystal grain and the light shield crystal grain are compared according to the described first distance, meets number to obtain multiple comparisons；
(e) when the soprano that the comparison meets number produces, the coordinate of the light shield crystal grain is utilized to obtain the blank crystalline substance
The coordinate of grain；
(f) coordinate and one of one of the blank crystal grain is calculated with reference to the second distance between coordinate；And
(g) this is adjusted with reference to coordinate according to the second distance to meet the coordinate of the light shield crystal grain.
2. according to the method for claim 1, it is characterised in that the step (c) includes：
The position data for scanning the wafer is obtained from some ranging sequences.
3. according to the method for claim 1, it is characterised in that the step (d) includes：
The mobile light shield crystal grain to the blank crystal grain, make the light shield crystal grain at least one with the blank crystal grain one
Person is overlapping.
4. according to the method for claim 1, it is characterised in that the step (e) includes：
The comparison of sorting meets number.
5. according to the method for claim 1, it is characterised in that the step (e) includes：
Record the location status of the light shield crystal grain and the blank crystal grain when comparison meets soprano's generation of number.
6. according to the method for claim 1, it is characterised in that the step (c) includes：
The wafer is scanned using an automatic optical detection device.
7. according to the method for claim 6, it is characterised in that the step (g) includes：
One photo-sensitive cell of the automatic optical detection device is moved to an origin crystal grain of the wafer according to this with reference to coordinate.
8. according to the method for claim 1, it is characterised in that the step (b) includes：
Record the light shield crystal grain any one arrive other light shield crystal grain first distance.
9. according to the method for claim 1, it is characterised in that in the step (c), the quantity of the blank crystal grain and institute
The quantity for stating light shield crystal grain is identical.
10. according to the method for claim 1, it is characterised in that in the step (e), the comparison meets number most
High person is equal to the quantity of the blank crystal grain.
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| CN201310703377.9A CN104733335B (en) | 2013-12-19 | 2013-12-19 | For detecting the comparison seat calibration method of wafer |
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| CN201310703377.9A CN104733335B (en) | 2013-12-19 | 2013-12-19 | For detecting the comparison seat calibration method of wafer |
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| CN104733335B true CN104733335B (en) | 2017-11-24 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101719463A (en) * | 2009-11-17 | 2010-06-02 | 博磊科技股份有限公司 | Method for searching edge of wafer |
| CN102881609A (en) * | 2012-09-17 | 2013-01-16 | 上海华力微电子有限公司 | Method for detecting repetitive defect and design weakness of multi-project wafer (MPW) product |
| CN103311148A (en) * | 2013-06-04 | 2013-09-18 | 上海华力微电子有限公司 | Defect detection and observation method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070038617A (en) * | 2005-10-06 | 2007-04-11 | 삼성전자주식회사 | Standard sample for compensating of the inspection tool |
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- 2013-12-19 CN CN201310703377.9A patent/CN104733335B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101719463A (en) * | 2009-11-17 | 2010-06-02 | 博磊科技股份有限公司 | Method for searching edge of wafer |
| CN102881609A (en) * | 2012-09-17 | 2013-01-16 | 上海华力微电子有限公司 | Method for detecting repetitive defect and design weakness of multi-project wafer (MPW) product |
| CN103311148A (en) * | 2013-06-04 | 2013-09-18 | 上海华力微电子有限公司 | Defect detection and observation method |
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