CN104732006B - A kind of steady temperature calculating method of IGBT module - Google Patents
A kind of steady temperature calculating method of IGBT module Download PDFInfo
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Abstract
The invention discloses a kind of steady temperatures of IGBT module to calculate method, and the steady temperature of the IGBT module calculates method the following steps are included: calculating IGBT module loss；Input IGBT module thermal characteristic parameter；IGBT module cooling system thermal circuit model is established, the thermal circuit model includes IGBT module, thermal conductive contact material and radiator；Determine IGBT module temperature.The calculation method of the IGBT module proposed through the invention avoids the prior art and passes through the Equivalent heat path model that heat-transfer character mathematical approach method in port generates, the distortion and error for avoiding non-physical thermal resistance and thermal capacitance to generate while guaranteeing stable state computational accuracy；The serious drawback of the huge time-consuming of field domain computation model amount of calculation is avoided, the working efficiency of the system design based on IGBT module is improved.
Description
Technical field
The present invention relates to a kind of steady temperatures to calculate method, and in particular to a kind of steady temperature calculating side of IGBT module
Method.
Background technique
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is that one kind passes through control
What signal processed can turn on and off turns off power electronic devices.IGBT tool is there are three terminal: gate terminal (G) and two bear
Lotus terminal emitter (E), collector (C).By applying voltage appropriate between gate pole and emitter, IGBT can control one
The electric current in a direction, i.e. turn-on and turn-off.Due to the unbearable back-pressure of IGBT device, generally in IGBT device in industrial application
Freewheeling diode in parallel between two face terminals, and be packaged together and to form IGBT module.IGBT has input impedance height, driving
The feature that power is small, control circuit is simple, speed is fast and working frequency is high, referred to as most have application prospect power electronic devices it
One, more and more extensive answer is obtained in fields such as industrial dragging, rail traffic, high voltage power transmission, intelligent appliance and Industry Controls
With.
IGBT module needs often turn on and off in practical application, to control load current, meanwhile, in turn-on and turn-off
Under the conditions of IGBT module still suffer from state current and off state current, these can all make IGBT module bear certain power damage
Consumption generates heat and leads to the promotion of IGBT module chip temperature.In order to guarantee safety when IGBT module work, generally need
To guarantee that the heat generated in IGBT module operation can shed in time by configuring air-cooled radiator or water-cooled radiator.Due to
The complex internal structure of IGBT module, especially high-voltage IGBT module propose very high request to insulation performance, therefore, how to obtain
Emphasis considers the problems of when the temperature characterisitic of IGBT module chip is power electronic equipment design in must running, and not yet very well
It solves the problems, such as.Currently, the main running temperature characteristic for obtaining IGBT module by calculating.
There are mainly two types of the temperature computation methods of IGBT module, thermal impedance analytic approach and field domain analytic approach, these methods are closed
Temperature changing trend is infused, requires complicated and parameter to be not easy to obtain design conditions.It is publishing " for IGBT module junction temperature
The thermo-electrically Coupling Model Research of prediction " (thermo-electrically Coupling Model Research electricity of the such as Wu Yansong for the prediction of IGBT module junction temperature
Work electric energy new technology, the phase of volume 33 3,2014) in describe typical thermal impedance analytic approach.This method needs thermal impedance network analog
The heat propagation characteristic of heat dissipation element, since simulation of this method to material thermal characteristics is substantially still port approximate model rather than object
Model is managed, and the connection type of thermal capacitance parameter and numerical value are affected to computational accuracy in model, for mainly closing in engineering
The problems such as highest stable state junction temperature of the heart, is easy to produce bigger numerical concussion, and be easy to cause large error.A kind of patent " acquisition electricity
The method and apparatus of power electronic device transient temperature " (patent No. CN 102930096A), which disclose, typically to be analyzed based on field domain
Method obtains the calculation method of IGBT module transient temperature, and this method establishes the finite element model and limited bulk mould of IGBT module
Type obtains detailed convection coefficient distribution and Temperature Distribution inside IGBT module, and this method needs IGBT module in engineering practice
The detailed dimensions and physical parameter of internal structure, user can not obtain, while amount of calculation is huge and time-consuming every time
It is longer.
There are mainly two types of the temperature computation methods of high-voltage IGBT module, thermal impedance analytic approach and field domain analytic approach.These sides
Method is respectively present following technology prejudice:
(1) these methods pay close attention to temperature changing trend, require complicated and parameter to be not easy to obtain design conditions；
(2) numerical value and arrangement of thermal capacitance parameter are affected to computational accuracy, are easy to produce error；
(3) model parameter obtains difficult, and general user can not obtain；
(4) model amount of calculation is huge, takes a long time.
Accordingly, it is desirable to provide a kind of chip steady temperature for being able to satisfy the requirement of high-voltage IGBT module engineer application computational accuracy
Calculation method come promoted IGBT module engineer application design working efficiency.
Summary of the invention
In view of the deficiencies of the prior art, the steady temperature that the present invention provides a kind of IGBT module calculates method, the IGBT
Module is made of igbt chip and diode chip for backlight unit, and the steady temperature of the IGBT module calculates method the following steps are included: meter
Calculate IGBT module loss；Input IGBT module thermal characteristic parameter；Establish IGBT module cooling system thermal circuit model, the Re Lumo
Type includes IGBT module, thermal conductive contact material and radiator；Determine IGBT module temperature.
Preferably, the calculating IGBT module loss, total losses and the diode including the calculating igbt chip
The total losses of chip.
Preferably, the calculation formula of the total losses of the igbt chip are as follows:
①
Formula 1. in, PIGBTFor the total losses of the igbt chip, TIGBTFor the igbt chip loss calculation time,
UIGBTVoltage, I for the igbt chipIGBTFor the electric current of the igbt chip, NIGBTIt is the igbt chip in loss calculation
On-off times in time, Esw.IGBTFor the igbt chip single switching loss；
Wherein, TIGBTUnit be s；UIGBTFor variations per hour, unit V；IIGBTFor variations per hour, unit A；Esw.IGBT's
Unit is J；PIGBTUnit be W.
Preferably, the calculation formula of the total losses of the diode chip for backlight unit are as follows:
②
Formula 2. in, PFWDFor the total losses of the diode chip for backlight unit, TFWDFor the diode chip for backlight unit loss calculation time,
UFWDFor the voltage of diode chip for backlight unit, IFWDFor the electric current of diode chip for backlight unit, NFWDIt is diode chip for backlight unit within the loss calculation time
Open number, Esw.FWDFor diode chip for backlight unit single switching loss；
Wherein, TFWDUnit be s；UFWDFor variations per hour, unit V；IFWDFor variations per hour, unit A；Esw.FWDUnit
For J；PFWDUnit be W.
Preferably, the input IGBT module thermal characteristic parameter is the following steps are included: input knot-shell of the igbt chip
Thermal resistance Rth(j-c).IGBT；Input knot-shell thermal resistance R of the diode chip for backlight unitth(j-c).FWD；Input the heat of the thermal conductive contact material
Hinder Rth(TIM).chip；Input the radiator heat-dissipation face to external environment thermal resistance Rth(h-a)；Input external environment temperature；
Wherein, the Rth(j-c).IGBT, the Rth(j-c).FWD, the Rth(TIM).chipWith the Rth(h-a)Unit be K/W,
The external environment temperature unit is DEG C.
Preferably, the Rth(j-c).IGBTWith the Rth(j-c).FWDValue be 1E-4~1E-3K/W, the Rth(TIM).chip's
Value is 1E-3~1E-2K/W, the Rth(h-a)Value be 1E-3~20E-3K/W.
Preferably, described to establish IGBT module cooling system thermal circuit model the following steps are included: based on IGBT module heat
Element connection topology determines IGBT module cooling system thermal circuit model structure in transmission path；By igbt chip and diode chip for backlight unit
Total losses value as current source, using the numerical value of environment temperature as voltage source；It is connected according to heat transmission path with element
The correspondence resistance of element thermal resistance is connected in thermal circuit model between current source and voltage source by relationship.
Preferably, the heat transmission path is transferred heat to for heat by the igbt chip or the diode chip for backlight unit outer
Shell, the thermal conductive contact material is transferred heat to by shell, by the thermal conductive contact material heat transfer to the radiator, by the heat dissipation
Device transfers heat to external environment.
Preferably, the correspondence resistance of element thermal resistance is connected to by Re Lumo according to heat transmission path and element connection relationship
In type between current source and voltage source are as follows: the knot-in igbt chip corresponding current source and the igbt chip in the thermal circuit model
Shell thermal resistance corresponds to resistance and connects to form branch 1, diode chip for backlight unit corresponding current source and the diode core in the thermal circuit model
The knot of piece-shell thermal resistance corresponds to resistance and connects to form branch 2, and branch 3 is formed after the branch 1 is in parallel with the branch 2.Current source
It is grounded with one end of voltage source, the other end is connected with the resistance that heat transmission path and element connection relationship determine.
Preferably, the determining IGBT module temperature, comprising the following steps:
Circuit solution is carried out to the IGBT module cooling system thermal circuit model of foundation；
By the voltage of common node between the knot of igbt chip corresponding current source in thermal circuit model and igbt chip-shell thermal resistance
Corresponding to the junction temperature of igbt chip, which is V, which is DEG C；
By common node between the knot of diode chip for backlight unit corresponding current source in thermal circuit model and diode chip for backlight unit-shell thermal resistance
Voltage corresponds to the junction temperature of diode chip for backlight unit, which is V, which is DEG C；
By the knot of igbt chip in thermal circuit model-shell thermal resistance, knot-shell thermal resistance of diode chip for backlight unit and thermal conductive contact material
The voltage of common node corresponds to the skin temperature of IGBT module between thermal resistance, which is V, which is
℃；
By the thermal resistance of thermal conductive contact material in thermal circuit model and radiator heat-dissipation face to section public between the thermal resistance of external environment
The voltage of point corresponds to the surface temperature of radiator, which is V, which is DEG C.
Preferably, the IGBT module integrates emitter-base bandgap grading breakdown voltage as 3300V, and dc collector electric current is 1200A.
Compared with the nearest prior art, the invention has the benefit that
The present invention by calculate separately the on-state loss of igbt chip and diode chip for backlight unit in IGBT module, off-state loss and
Switching loss obtains the loss of all chips in IGBT module, is opened up using the connection of each element in IGBT module calorie spread path
The hot road computation model for establishing IGBT module with physics thermal resistance is flutterred, the thermal resistance parameters in model are obtained by measurement, utilize heat
The node voltage calculated value of road model obtains the stable state chip temperature of IGBT module；It is retouched by using the physics thermal resistance that measurement obtains
Element heat-transfer character is stated, the prior art is avoided and passes through the Equivalent heat path model that heat-transfer character mathematical approach method in port generates,
The distortion and error for avoiding non-physical thermal resistance and thermal capacitance to generate while guaranteeing stable state computational accuracy；By using the hot road IGBT
Model avoids the serious drawback of the huge time-consuming of field domain computation model amount of calculation, improves the system based on IGBT module
The working efficiency of design.
Detailed description of the invention
Invention is further described in detail with reference to the accompanying drawings and detailed description.
Fig. 1 is high-voltage IGBT module schematic diagram provided by the invention；
Fig. 2 is that the steady temperature of IGBT module in the embodiment of the present invention calculates the step flow chart of method；
Fig. 3 is that the voltage of igbt chip in the embodiment of the present invention is calculating the variation diagram in the time；
Fig. 4 is that the electric current of igbt chip in the embodiment of the present invention is calculating the variation diagram in the time；
Fig. 5 is that the voltage of diode chip for backlight unit in the embodiment of the present invention is calculating the variation diagram in the time；
Fig. 6 is that the electric current of diode chip for backlight unit in the embodiment of the present invention is calculating the variation diagram in the time；
Fig. 7 is the calorie spread path schematic diagram of IGBT module in the embodiment of the present invention；
Fig. 8 is IGBT module cooling system thermal circuit model figure in the embodiment of the present invention；
Description of symbols: C1-IGBT chip；C2- diode chip for backlight unit；B1- basic cell structure；10-IGBT module；
20- thermal conductive contact material；30- radiator；40- external environment air.
Specific embodiment
Specific embodiments of the present invention will be described in further detail with reference to the accompanying drawing.
In order to thoroughly understand the embodiment of the present invention, detailed structure will be proposed in following description.Obviously, the present invention is real
The execution for applying example is not limited to the specific details that those skilled in the art is familiar with.Presently preferred embodiments of the present invention is retouched in detail
State it is as follows, however in addition to these detailed description other than, the present invention can also have other embodiments.
The present invention by calculate separately the on-state loss of igbt chip and diode chip for backlight unit in IGBT module, off-state loss and
Switching loss obtains the loss of all chips in IGBT module, is opened up using the connection of each element in IGBT module calorie spread path
The hot road computation model for establishing IGBT module with physics thermal resistance is flutterred, the thermal resistance parameters in model are obtained by measurement, utilize heat
The node voltage calculated value of road model obtains the stable state chip temperature of IGBT module.
A kind of typical high voltage IGBT module provided by the invention is as shown in Fig. 1, and Fig. 1 is high pressure IGBT provided by the invention
Module diagram.IGBT module in Fig. 1 is made of igbt chip and diode chip for backlight unit, specifically include four igbt chip C1 and
Two diode chip for backlight unit C2 form basic cell structure B1.Several basic cell structures B1 constitutes an IGBT module 10,
It is best with 6 basic cell structure B1.Wherein, IGBT module 10 integrates emitter-base bandgap grading breakdown voltage as 3300V, dc collector electricity
Stream is 1200A.
It is that the steady temperature of IGBT module in the embodiment of the present invention calculates the step flow chart of method referring to Fig. 2, Fig. 2.Tool
Body the following steps are included:
Firstly, calculating IGBT module loss, comprising the following steps:
1, the total losses of igbt chip are calculated, with igbt chip loss calculation time TIGBT, igbt chip voltage UIGBT、
The electric current I of igbt chipIGBT, igbt chip calculate the time in on-off times NIGBTWith igbt chip single switching loss
Esw.IGBTTo calculate variable, the total losses P of igbt chip is 1. calculated according to formulaIGBT.Wherein, TIGBTUnit be s；UIGBTFor
Variations per hour, unit V；IIGBTFor variations per hour, unit A；Esw.IGBTUnit be J；PIGBTUnit be W.
①
2, the total losses of diode chip for backlight unit are calculated, with diode chip for backlight unit loss calculation time TFWD, diode chip for backlight unit voltage
UFWD, diode chip for backlight unit electric current IFWD, diode chip for backlight unit calculate the time in open times NFWDIt is opened with diode chip for backlight unit single
Close loss Esw.FWDTo calculate variable, the total losses P of diode chip for backlight unit is 2. calculated according to formulaFWD.Wherein, TFWDUnit be s；
UFWDFor variations per hour, unit V；IFWDFor variations per hour, unit A；Esw.FWDUnit be J；PFWDUnit be W.
②
Then, IGBT module thermal characteristic parameter is inputted, is included the following steps
1, knot-shell thermal resistance R of igbt chip is inputtedth(j-c).IGBT, unit K/W.The knot of general igbt chip-shell heat
There are certain variation ranges for resistance, answer its maximum value of limited selection for knot-shell thermal resistance of specific igbt chip, can guarantee in this way
The safety of calculated result.The general thermal resistance can be obtained by experiment measurement, and representative value is 1E-4~1E-3K/W.Thermal resistance is surveyed
Amount technology belongs to existing mature technology.
2, the knot of input diode chip-shell thermal resistance Rth(j-c).FWD, unit K/W.Knot-shell of general diode chip for backlight unit
There are certain variation ranges for thermal resistance, should use its maximum value for knot-shell thermal resistance of particular diode chip, can guarantee in this way
The safety of calculated result.The general thermal resistance can be obtained by experiment measurement, and representative value is 1E-4~1E-3K/W.
3, the thermal resistance R of thermal conductive contact material is inputtedth(TIM).chip, unit K/W.The thermal resistance of thermal conductive contact material is the same as it
Material property, press-loading process and chip unit area are closely related, and the general thermal resistance can be obtained by experiment measurement, representative value
For 1E-3~1E-2K/W.
4, thermal resistance R of the input radiator heat-dissipation face to external environmentth(h-a), unit K/W.The general thermal resistance can pass through reality
Test amount obtains, and representative value is 1E-3~20E-3K/W.
5, external environment temperature is inputted, unit is DEG C.The general temperature is obtained by experiment measurement.
Then, IGBT module cooling system thermal circuit model is established, comprising the following steps:
1, IGBT module cooling system thermal circuit model is determined based on element connection topology in IGBT module heat transmission path
Structure.The element that thermal circuit model considers mainly includes igbt chip, diode chip for backlight unit, thermal conductive contact material and radiator.Heat
Transmission path is mainly that heat by igbt chip (or diode chip for backlight unit) transfers heat to shell, transfers heat to thermal conductive contact material by shell
Material, by thermal conductive contact material heat transfer to radiator, by radiator heat transfer into environment.
2, using igbt chip and the numerical value of diode chip for backlight unit total losses as current source, using the numerical value of environment temperature as electricity
Potential source, the unit of current source are A, and the unit of voltage source is V.
3, element thermal resistance is corresponded to by resistance according to heat transmission path and element connection relationship and is connected to electricity in thermal circuit model
Between stream source and voltage source, unit of resistance Ω.The knot of igbt chip corresponding current source and igbt chip-shell heat in thermal circuit model
It hinders corresponding resistance to connect to form branch 1, the knot of diode chip for backlight unit corresponding current source and diode chip for backlight unit-shell thermal resistance in thermal circuit model
Corresponding resistance connects to form branch 2, and branch 3 is formed after branch 1 is in parallel with branch 2 in thermal circuit model.Current source and voltage source
One end ground connection, the other end are connected with the resistance that heat transmission path and element connection relationship determine.
Finally, determining IGBT module temperature, include the following steps:
1, circuit solution is carried out to the IGBT module cooling system thermal circuit model of foundation, typical method for solving includes parsing
Method and numerical method；
2, by the electricity of common node between the knot of igbt chip corresponding current source in thermal circuit model and igbt chip-shell thermal resistance
Pressure corresponds to the junction temperature of igbt chip, which is V, which is DEG C；
3, by common node between the knot of diode chip for backlight unit corresponding current source in thermal circuit model and diode chip for backlight unit-shell thermal resistance
Voltage correspond to diode chip for backlight unit junction temperature, the voltage unit be V, the junction temperature unit be DEG C；
4, by the knot of igbt chip in thermal circuit model-shell thermal resistance, knot-shell thermal resistance of diode chip for backlight unit and thermal conductive contact material
Thermal resistance between common node voltage correspond to IGBT module skin temperature, the voltage unit be V, the skin temperature unit
For DEG C；
5, by the thermal resistance of thermal conductive contact material in thermal circuit model and radiator heat-dissipation face to public between the thermal resistance of external environment
The voltage of node corresponds to the surface temperature of radiator, which is V, which is DEG C.
Referring to Fig. 3-Fig. 6, Fig. 3 is that the voltage of igbt chip in the embodiment of the present invention changes with time figure；Fig. 4 is this hair
The electric current of igbt chip changes with time figure in bright embodiment；Fig. 5 be the embodiment of the present invention in diode chip for backlight unit voltage with
The variation diagram of time；Fig. 6 is that the electric current of diode chip for backlight unit in the embodiment of the present invention changes with time figure.
The calculating time T that igbt chip is lost in the present embodimentIGBTFor 0.1s, the voltage U of igbt chipIGBTSuch as 3 institute of attached drawing
Show, the electric current I of igbt chipIGBTAs shown in Fig. 4, igbt chip is calculating the on-off times N in the timeIGBTFor 10, IGBT core
Piece single switching loss Esw.IGBTFor 2.76mJ, the total losses P of igbt chip is 1. calculated according to formulaIGBTFor 2088.07W.
The calculating time T that diode chip for backlight unit is lost in the present embodimentFWDFor 0.1s, the voltage U of diode chip for backlight unitFWDSuch as attached drawing
Shown in 5, the electric current I of diode chip for backlight unitFWDSuch as attached drawing 6, diode chip for backlight unit opens times N within the calculating timeFWDIt is 6, two poles
Tube chip single switching loss Esw.FWDFor 1.2mJ, the total losses P of diode chip for backlight unit is 2. calculated according to formulaFWDFor 93.58W.
It can get knot-shell thermal resistance R of igbt chip in the present embodiment by measuringth(j-c).IGBT, representative value is
0.009K/W；It can get knot-shell thermal resistance R of diode chip for backlight unit in the present embodiment by measuringth(j-c).FWD, representative value is
0.018K/W；It can get the thermal resistance R of thermal conductive contact material in the present embodiment by measuringth(TIM).chip, representative value is
0.012K/W；Pass through the thermal resistance R in radiator heat-dissipation face in the available the present embodiment of measurement to external environmentth(h-a), representative value is
0.01K/W；The present embodiment China and foreign countries environment temperature T is obtained by measurement0, representative value is 30 DEG C.
For element connection topology referring to attached drawing 7, Fig. 7 is that the present invention is real in the calorie spread path of IGBT module in the present embodiment
Apply the calorie spread path schematic diagram of IGBT module in example.Heat is generated by IGBT module 10, by thermal conductive contact material 20, is dissipated
Hot device 30 travels in external environment air 40.
Fig. 8 is IGBT module cooling system thermal circuit model figure in the embodiment of the present invention.Current source IIGBTCorresponding igbt chip
Total losses power, amplitude 2088.07A；Current source IFWDThe total losses power of corresponding diode chip for backlight unit, amplitude 93.58A；
Voltage source V0Corresponding external environment temperature, amplitude 30V；Resistance RIGBTKnot-shell thermal resistance of corresponding igbt chip, amplitude 0.009
Ω；Resistance RFWDKnot-shell thermal resistance of corresponding diode chip for backlight unit, amplitude are 0.018 Ω；Resistance RTIM.chipCorresponding thermal conductive contact material
Thermal resistance, amplitude be 0.012 Ω；Resistance Rh-aTo the thermal resistance of external environment, amplitude is 0.01 Ω in corresponding radiator heat-dissipation face.
In the present embodiment, current source IIGBTWith resistance RIGBTSeries connection forms branch 1；Current source IFWDWith resistance RFWDSeries connection shape
At branch 2；Branch 3 is formed after branch 1 is in parallel with branch 2,；Branch 3 and resistance RTIM.chip, resistance Rh-a, voltage source V0Series connection；
Respectively by current source IIGBT, current source IFWD, voltage source V0One end ground connection not connect with resistance.
In the present embodiment, based on one kind of circuit analysis analytic method, i.e. modal analysis, model is solved, can be obtained
Current source IIGBTWith resistance RIGBTCommon-node voltage is 96.8V；Current source IFWDWith resistance RFWDCommon-node voltage is 79.7V；
Resistance RIGBTWith resistance RTIM.chipCommon-node voltage is 78.0V；Resistance RTIM.chipWith resistance Rh-aCommon-node voltage is
51.8V。
In the present embodiment, it is known that the junction temperature of igbt chip is 96.8 DEG C；The junction temperature of diode chip for backlight unit is 79.7 DEG C；IGBT mould
The skin temperature of block is 78.0 DEG C；The surface temperature of radiator is 51.8 DEG C.
The present invention by calculate separately the on-state loss of igbt chip and diode chip for backlight unit in IGBT module, off-state loss and
Switching loss obtains the loss of all chips in IGBT module, is opened up using the connection of each element in IGBT module calorie spread path
The hot road computation model for establishing IGBT module with physics thermal resistance is flutterred, the thermal resistance parameters in model are obtained by measurement, utilize heat
The node voltage calculated value of road model obtains the stable state chip temperature of IGBT module；It is retouched by using the physics thermal resistance that measurement obtains
Element heat-transfer character is stated, the prior art is avoided and passes through the Equivalent heat path model that heat-transfer character mathematical approach method in port generates,
The distortion and error for avoiding non-physical thermal resistance and thermal capacitance to generate while guaranteeing stable state computational accuracy；By using the hot road IGBT
Model avoids the serious drawback of the huge time-consuming of field domain computation model amount of calculation, improves the system based on IGBT module
The working efficiency of design.
Finally it should be noted that: the above embodiments are merely illustrative of the technical scheme of the present invention and are not intended to be limiting thereof, to the greatest extent
Invention is explained in detail referring to above-described embodiment for pipe, and those of ordinary skill in the art still can be to this hair
Bright specific embodiment is modified or replaced equivalently, these without departing from spirit and scope of the invention any modification or
Equivalent replacement is being applied within pending claims.
Claims (8)
1. a kind of steady temperature of IGBT module calculates method, the IGBT module is made of igbt chip and diode chip for backlight unit,
It is characterized in that, the IGBT module steady temperature calculate method the following steps are included:
Calculate IGBT module loss；
Input IGBT module thermal characteristic parameter；
IGBT module cooling system thermal circuit model is established, the thermal circuit model includes IGBT module, thermal conductive contact material and heat dissipation
Device；
Determine IGBT module temperature；
The input IGBT module thermal characteristic parameter is the following steps are included: input knot-shell thermal resistance of the igbt chip
Rth(j-c).IGBT；Input knot-shell thermal resistance R of the diode chip for backlight unitth(j-c).FWD；Input the thermal resistance of the thermal conductive contact material
Rth(TIM).chip；Input the radiator heat-dissipation face to external environment thermal resistance Rth(h-a)；Input external environment temperature；
Wherein, the Rth(j-c).IGBT, the Rth(j-c).FWD, the Rth(TIM).chipWith the Rth(h-a)Unit be K/W, it is described
External environment temperature unit is DEG C；
It is described to establish IGBT module cooling system thermal circuit model the following steps are included: based on member in IGBT module heat transmission path
Part connection topology determines IGBT module cooling system thermal circuit model structure；By the number of the total losses of igbt chip and diode chip for backlight unit
Value is used as current source, using the numerical value of environment temperature as voltage source；According to heat transmission path and element connection relationship by element
The correspondence resistance of thermal resistance is connected in thermal circuit model between current source and voltage source；
The determining IGBT module temperature, comprising the following steps:
Circuit solution is carried out to the IGBT module cooling system thermal circuit model of foundation；
The voltage of common node between the knot of igbt chip corresponding current source in thermal circuit model and igbt chip-shell thermal resistance is corresponding
In the junction temperature of igbt chip, which is V, which is DEG C；
By the voltage of common node between the knot of diode chip for backlight unit corresponding current source in thermal circuit model and diode chip for backlight unit-shell thermal resistance
Corresponding to the junction temperature of diode chip for backlight unit, which is V, which is DEG C；
By the knot of igbt chip in thermal circuit model-shell thermal resistance, knot-shell thermal resistance and thermal conductive contact material thermal resistance of diode chip for backlight unit
Between common node voltage correspond to IGBT module skin temperature, the voltage unit be V, the skin temperature unit be DEG C；
By the thermal resistance of thermal conductive contact material in thermal circuit model and radiator heat-dissipation face to common node between the thermal resistance of external environment
Voltage corresponds to the surface temperature of radiator, which is V, which is DEG C.
2. the steady temperature of IGBT module according to claim 1 calculates method, which is characterized in that the calculating IGBT mould
Block loss, including calculating the total losses of the igbt chip and the total losses of the diode chip for backlight unit.
3. the steady temperature of IGBT module according to claim 2 calculates method, which is characterized in that the igbt chip
The calculation formula of total losses are as follows:
Formula 1. in, PIGBTFor the total losses of the igbt chip, TIGBTFor the igbt chip loss calculation time, UIGBTFor
Voltage, the I of the igbt chipIGBTFor the electric current of the igbt chip, NIGBTIt is the igbt chip within the loss calculation time
On-off times, Esw.IGBTFor the igbt chip single switching loss, t0For the igbt chip loss calculation starting when
Between, t is time variable；
Wherein, TIGBTUnit be s；UIGBTFor variations per hour, unit V；IIGBTFor variations per hour, unit A；Esw.IGBTUnit be
J；PIGBTUnit be W.
4. the steady temperature of IGBT module according to claim 2 calculates method, which is characterized in that the diode chip for backlight unit
Total losses calculation formula are as follows:
Formula 2. in, PFWDFor the total losses of the diode chip for backlight unit, TFWDFor the diode chip for backlight unit loss calculation time, UFWD
For the voltage of diode chip for backlight unit, IFWDFor the electric current of diode chip for backlight unit, NFWDFor diode chip for backlight unit opening within the loss calculation time
Logical number, Esw.FWDFor diode chip for backlight unit single switching loss, t'0For the initial time of the diode chip for backlight unit loss calculation, t
For time variable；
Wherein, TFWDUnit be s；UFWDFor variations per hour, unit V；IFWDFor variations per hour, unit A；Esw.FWDUnit be J；
PFWDUnit be W.
5. the steady temperature of IGBT module according to claim 1 calculates method, which is characterized in that the Rth(j-c).IGBT
With the Rth(j-c).FWDValue be 1E-4~1E-3K/W, the Rth(TIM).chipValue be 1E-3~1E-2K/W, the Rth(h-a)
Value be 1E-3~20E-3K/W.
6. the steady temperature of IGBT module according to claim 1 calculates method, which is characterized in that the heat transmission road
Diameter transfers heat to shell by the igbt chip or the diode chip for backlight unit for heat, transfers heat to the thermal conductive contact material by shell
Material, by the thermal conductive contact material heat transfer to the radiator, by the radiator heat transfer to external environment.
7. the steady temperature of IGBT module according to claim 1 calculates method, which is characterized in that according to heat transmission road
The correspondence resistance of element thermal resistance is connected in thermal circuit model between current source and voltage source by diameter and element connection relationship are as follows: described
Igbt chip corresponding current source resistance corresponding with the knot of the igbt chip-shell thermal resistance connects to form branch 1 in thermal circuit model, institute
The resistance corresponding with the knot of the diode chip for backlight unit-shell thermal resistance of diode chip for backlight unit corresponding current source in thermal circuit model is stated to connect to form branch
Road 2 forms branch 3, one end ground connection of current source and voltage source, the other end and heat after the branch 1 is in parallel with the branch 2
Transmission path is connected with the resistance that element connection relationship determines.
8. the steady temperature of IGBT module described in the claim of -7 any one calculates method according to claim 1, special
Sign is that the IGBT module integrates emitter-base bandgap grading breakdown voltage as 3300V, and dc collector electric current is 1200A.
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