CN104722469A - Ultrasonic transducer and manufacturing method thereof - Google Patents
Ultrasonic transducer and manufacturing method thereof Download PDFInfo
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- CN104722469A CN104722469A CN201510093075.3A CN201510093075A CN104722469A CN 104722469 A CN104722469 A CN 104722469A CN 201510093075 A CN201510093075 A CN 201510093075A CN 104722469 A CN104722469 A CN 104722469A
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Abstract
The invention belongs to the technical field of transducers, and provides an ultrasonic transducer and a manufacturing method thereof. The ultrasonic transducer comprises a piezoelectric layer, a matching layer, a tuning layer and a backing layer. The piezoelectric layer is used for radiating ultrasonic wave signals forwards or backwards, and electrodes are plated on the two sides of the piezoelectric layer respectively. The matching layer is arranged at the front end of the piezoelectric layer and used for transmitting the ultrasonic wave signals radiated forwards. The tuning layer is arranged at the rear end of the piezoelectric layer located between the tuning layer and the matching layer. The backing layer is used for absorbing the ultrasonic wave signals radiated backwards by the piezoelectric layer and located on the side, deviating from the piezoelectric layer, of the tuning layer. Through arranging the tuning layer between the piezoelectric layer and the backing layer, the ultrasonic wave signals radiated backwards by the piezoelectric layer are effectively utilized, it is avoided that part of the ultrasonic wave signals enter the backing layer to be attenuated in a heat energy mode, meanwhile, the tuning layer is used for tuning pulse reverb of an ultrasonic probe, and therefore the time-domain response and frequency-domain response of the ultrasonic transducer are improved to a certain degree.
Description
Technical field
The invention belongs to the technical field of transducer, particularly relate to the manufacture method of a kind of ultrasonic transducer and this ultrasonic transducer.
Background technology
Existing ultrasonic transducer structure as shown in Figure 1, mainly comprise piezoelectric layer 101, matching layer 102, back sheet 103 and acoustic lens 104 (or sound lag sheet), when adding electrical signals at piezoelectric layer 101 two ends, piezoelectric vibrator produce vibration and respectively to radiative acoustic wave signal after forward direction, the acoustical signal of forward directed radiation is after matching layer 102 with acoustic lens 104 (or sound lag sheet), there is certain decay and enter detected object, backward the acoustic signals of radiation then major part be attenuated larger back sheet 103 and absorb, be wasted with the form of heat energy, thus the sound wave of radiation backward fails to be effectively utilized.In this ultrasonic transducer structure, the sound energy reflection coefficient R of piezoelectric layer 101 1 back sheet 103 interface is:
Wherein, Z
pfor the acoustic impedance of described piezoelectric layer, Z
bfor the acoustic impedance of described back sheet.
Fig. 2 is time domain and the frequency domain characteristic figure of the simulation of conventional ultrasonic wave transducer architecture.
Propose in Chinese patent (application number is: ZL201210339333.8) after wafer, add the relatively high solution matching layer of one deck acoustic impedance, its acoustic impedance can have the acoustic impedance between 40Mrayls to 120Mrayls, ultrasonic energy is launched forward to increase, improve ultrasonic transducer performance, but acoustic impedance solution matching layer major part adopts metal material, metal material is not easily cutting material in arrayed ultrasonic Probe technology, the blade of easy damage array cutting, and increase the higher solution matching layer of acoustic impedance as hard boundary reflection major part sound wave at wafer back surface, the thickness of corresponding wafer is 1/4 wavelength, compared to the soft interface of common backing, the thickness of corresponding wafer is 1/2 wavelength, be equivalent to the probe of same operating frequency, the probe separating matching layer is adopted to require that wafer is thinner, thickness is original 1/2, each of which increases the difficulty of technique.
The behind efficiency layer adding the different acoustic impedance values of multilayer after wafer is proposed in Chinese patent (application number is: ZL201310002007.2), the behind efficiency number of plies that this invention adopts is on the high side, and each layer behind efficiency layer acoustic impedance is successively decreased successively, add complexity and the unstability of technique to a certain extent, manufacture difficulty strengthens.
Summary of the invention
The object of the present invention is to provide a kind of ultrasonic transducer, by arranging tuning layer between piezoelectric layer and back sheet, the technical problem that the acoustic signals being intended to solve the radiation backward of ultrasonic transducer in prior art can not make full use of.
The present invention is achieved in that a kind of ultrasonic transducer, comprising:
Piezoelectric layer, for forward or backward radiative acoustic wave signal, the both sides of described piezoelectric layer are plated respectively and are provided with electrode;
Matching layer, is arranged at described piezoelectric layer front end and acoustic signals for transmitting forward directed radiation;
Tuning layer, be arranged at described piezoelectric layer rear end, and described piezoelectric layer is between described tuning layer and described matching layer;
Back sheet, for absorbing the acoustic signals of described piezoelectric layer radiation backward, and is positioned at the side deviating from described piezoelectric layer of described tuning layer.
Further, the acoustic impedance values Zp of the acoustic impedance values Zt of described tuning layer, the acoustic impedance values Zb of described back sheet and described piezoelectric layer meets relational expression simultaneously:
0 < Z
t< Z
band
Further, the acoustic impedance range of described tuning layer is 1 ~ 4MRayl.
Further, the acoustic impedance values Zp of the acoustic impedance values Zt of described tuning layer, the acoustic impedance values Zb of described back sheet and described piezoelectric layer meets relational expression simultaneously:
Z
t> Z
b> 0 and
Further, the acoustic impedance of described tuning layer is 40 ~ 110MRayl.
Further, the thickness range of described tuning layer is 1/5 ~ 4/5 wavelength, and wherein, described wavelength is determined by the ratio between the velocity of sound of described tuning layer and the operating frequency of described tuning layer.
Further, the thickness of described tuning layer is 1/2 wavelength or 1/4 wavelength.
Present invention also offers a kind of probe, comprise ultrasonic transducer, described ultrasonic transducer comprises:
Piezoelectric layer, for forward or backward radiative acoustic wave signal, the both sides of described piezoelectric layer are plated respectively and are provided with electrode;
Matching layer, is arranged at described piezoelectric layer front end and acoustic signals for transmitting forward directed radiation;
Tuning layer, be arranged at described piezoelectric layer rear end, and described piezoelectric layer is between described tuning layer and described matching layer;
Back sheet, for absorbing the acoustic signals of described piezoelectric layer radiation backward, and is positioned at the side deviating from described piezoelectric layer of described tuning layer.
Further, described probe is doppler transducer, one-dimensional array probe or multidimensional face array probe.
Present invention also offers a kind of manufacture method of ultrasonic transducer, comprise the following steps:
Polarization process, provides the piezoelectric layer be made up of piezoelectric and both sides plated electrode to described piezoelectric layer, applies voltage complete polarization to described piezoelectric layer both sides;
Acoustic layer is set, matching layer and tuning layer are set respectively in the front-end and back-end of described piezoelectric layer;
Cutting acoustic layer, cut described acoustic layer along described matching layer towards described tuning layer, the grooving formed gos deep into described tuning layer, forms multiple independently array element to cut;
Back sheet is set, described back sheet is set in described tuning layer side and is relatively arranged on described tuning layer both sides to make described back sheet and described piezoelectric layer.
Further, in the step of cutting acoustic layer, the described matching layer after cutting and described piezoelectric layer are cut all completely and are worn and partly cut described tuning layer.The present invention relative to the technique effect of prior art is: by arranging tuning layer between piezoelectric layer and back sheet, effectively to utilize the acoustic signals of described piezoelectric layer radiation backward, avoid acoustic wave segment signal to enter described back sheet to be attenuated with the form of heat energy, utilize the pulse reverb of the tuning ultrasonic probe of this tuning layer simultaneously, thus improve time domain response and the frequency domain response of ultrasonic transducer to a certain extent.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme of the embodiment of the present invention, be briefly described to the accompanying drawing used required in the embodiment of the present invention or description of the prior art below, apparently, accompanying drawing described is below only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of ultrasonic transducer in prior art;
Fig. 2 is the pulse echo frequency spectrum emulation schematic diagram of ultrasonic transducer structure in Fig. 1;
The structural representation of the ultrasonic transducer that Fig. 3 provides for the embodiment of the present invention;
Fig. 4 is the overall effectively acoustic impedance Z in the piezoelectric layer back side in Fig. 3 (comprising tuning layer and back sheet)
bprimeemulation schematic diagram;
Fig. 5 is the sound energy reflection coefficient schematic diagram at piezoelectric layer and tuning layer interface in Fig. 3;
Fig. 6 is that in Fig. 3, tuning layer thickness is the pulse echo frequency spectrum emulation schematic diagram of 1/2 wavelength;
Fig. 7 is that in Fig. 3, tuning layer thickness is the pulse echo frequency spectrum emulation schematic diagram of 1/4 wavelength;
Fig. 8 is that in Fig. 3, tuning layer thickness is 1/4 wavelength and adopts the pulse echo frequency spectrum emulation schematic diagram of acoustic impedance back sheet;
The process chart of the manufacture method of the ultrasonic transducer that Fig. 9 embodiment of the present invention provides;
Figure 10 be in Fig. 9 before cut processing technology schematic diagram.
Detailed description of the invention
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Please refer to Fig. 3, the ultrasonic transducer that the embodiment of the present invention provides comprises:
Piezoelectric layer 10, respectively to front or radiative acoustic wave signal backward, the both sides of described piezoelectric layer 10 are plated respectively and are provided with electrode;
Matching layer 20, is arranged at described piezoelectric layer 10 front end and acoustic signals for transmitting forward directed radiation;
Tuning layer 40, be arranged at described piezoelectric layer 10 rear end, and described piezoelectric layer 10 is between described tuning layer 40 and described matching layer 20;
Back sheet 50, for absorbing the acoustic signals of described piezoelectric layer 10 radiation backward, and is positioned at the side deviating from described piezoelectric layer 10 of described tuning layer 40.
The ultrasonic transducer that the embodiment of the present invention provides by arranging tuning layer 40 between piezoelectric layer 10 and back sheet 50, effectively to utilize the acoustic signals of described piezoelectric layer 10 radiation backward, avoid acoustic wave segment signal to enter described back sheet 50 to be attenuated with the form of heat energy, utilize the pulse reverb of the tuning ultrasonic probe of this tuning layer 40 simultaneously, thus improve time domain response and the frequency domain response of ultrasonic transducer to a certain extent.
In this embodiment, described tuning layer 40 is adhered between described piezoelectric layer 10 and described back sheet 50, and described back sheet 50 is bonding with described tuning layer 40.Understandably, described matching layer 20, described piezoelectric layer 10, described tuning layer 40 and described back sheet 50 stacked setting from top to bottom.
In this embodiment, described piezoelectric layer 10 is made up of piezoelectric, and such as, piezoelectric ceramics, piezoelectric monocrystal, piezoelectric membrane, piezo-electricity composite material etc. and combination thereof preferably, can be lead titanate piezoelectric ceramics.
In this embodiment, can be the electrode that silver electrode, copper electrode, gold electrode or other materials are made at described piezoelectric layer 10 both sides institute plated electrode.
In this embodiment, described ultrasonic transducer can be widely used in the field such as medical diagnosis and Non-Destructive Testing.
In this embodiment, described ultrasonic transducer also comprises acoustic lens 30, for assembling sound field, and with described piezoelectric layer 10 be arranged at respectively described matching layer 20 back to two on the surface.Understandably, described acoustical impedance layer 30 is bonding with described matching layer 20, the stacked setting from top to bottom of described acoustic lens 30, described matching layer 20, described piezoelectric layer 10, described tuning layer 40 and described back sheet 50.Described acoustic lens 30 is concentrated for assembling sound field to make focus place acoustic wave energy and then narrows beam angle.Preferably, this acoustic lens 300 can be substituted by sound lag sheet, for thickness measure.
Further, described tuning layer 40 forms with described back sheet 50 acoustic construction being positioned at described piezoelectric layer 10 back side, and effective acoustic impedance of this acoustic construction is defined as Z
bprime, Z
bprimebe expressed as:
The sound energy reflection coefficient R of described piezoelectric layer 10 and described tuning layer 40
tfor:
Wherein, Z
pfor the acoustic impedance of described piezoelectric layer 10, Z
tfor the acoustic impedance of described tuning layer 40, Z
bfor the acoustic impedance of described back sheet 50, l is the thickness of described tuning layer 40, the operating frequency of v to be the velocity of sound of described tuning layer 40 and f be described tuning layer 40.
Be appreciated that by arranging described tuning layer 40 with the signal side of the positive electrode formation whole acoustic structure at described piezoelectric layer 10 between described piezoelectric layer 10 and described back sheet 50, for effective acoustic impedance Z of this whole acoustic structure
bprimedraw by above-mentioned formulae discovery, and in conjunction with sound energy reflection coefficient R
tcomputing formula can obtain the sound energy reflection coefficient of described piezoelectric layer 10 and described tuning layer 40 interface.
Can obtain drawing a conclusion according to the above-mentioned derivation of equation:
(1) when the thickness of described tuning layer 40
time, namely during 1/2 wavelength, Z
bprimenumerically and Z
bequal, R
tidentical with R;
(2) when the thickness of described tuning layer 40
time, namely during 1/4 wavelength, Z
bprimecan be expressed as
the acoustic impedance values Z of described tuning layer 40
t, described back sheet 50 acoustic impedance values Z
bwith the acoustic impedance values Z of described piezoelectric layer 10
pmeet relational expression simultaneously:
0 < Z
t< Z
band
If met
during inequality, R
tbe greater than R, can improve the reflectance factor of transducer forward directed radiation acoustic energy, this inequality also shows simultaneously, Low ESR tuning layer 40 can be adopted or adopt high impedance back sheet 50 to improve the sensitivity of transducer, the time-frequency domain response of tuning probe, preferably, the acoustic impedance Z of described tuning layer 40
tscope is the acoustic impedance Z of 1-4Mrayls and described back sheet 50
bscope is 10-30MRayls.Meanwhile, also can adjust the acoustic impedance of tuning layer 40 and back sheet 50 simultaneously, meet
inequality, strengthens sound energy reflection coefficient further, improves the sensitivity of transducer.Preferably,
z can be far smaller than
p.
(3) when the thickness of described tuning layer 40
time, namely during 1/4 wavelength, Z
bprimecan be expressed as
the acoustic impedance values Z of described tuning layer 40
t, described back sheet 50 acoustic impedance values Z
bwith the acoustic impedance values Z of described piezoelectric layer 10
pmeet relational expression simultaneously:
Z
t> Z
b> 0 and
If met
during inequality, R
tbe greater than R, this inequality shows, high impedance tuning layer 40 or Low ESR back sheet 50 can be adopted to improve the sensitivity of transducer, the time-frequency domain response of tuning probe, preferably, and the acoustic impedance Z of described tuning layer 40
tscope is the acoustic impedance Z of 40-110Mrayls and described back sheet 50
bfor 1-3MRayls.Meanwhile, also can adjust the acoustic impedance of tuning layer 40 and back sheet 50 simultaneously, meet
inequality, strengthens sound energy reflection coefficient further, improves the sensitivity of transducer.Preferably,
z can be far longer than
p.
In conjunction with above-mentioned theory analysis, to effective acoustic impedance Z
bprimeand reflection R
tcurve with tuning layer 40 varied in thickness emulates, and might as well suppose tuning layer 40 acoustic impedance Z in emulation
tfor 2Mrayls, the acoustic impedance Z of back sheet 50
bget 2 successively, 5,10,30Mrayls, Fig. 4 be the Z of emulation
bprimesize is with tuning layer 40 thickness profiles, and Fig. 5 is sound energy reflection coefficient
with tuning layer 40 thickness rule.
Following employing KLM (Krimholtz-Leadom-Mettaei) equivalent-circuit model, namely the theory of application transport line is analyzed ultrasonic transducer performance and is studied, can the time domain of analog ultrasonic wave transducer and frequency domain characteristic in conjunction with this model.Fig. 6 is ultrasonic transducer structure in the present invention, between piezoelectric layer 10 and back sheet 50, load a layer thickness is simulation result after 1/2 wavelength thickness tuning layer 40, relative Fig. 2, the sensitivity of ultrasonic transducer of the present invention improves 1.61dB, and-6dB bandwidth improves 11.3%; Fig. 7 is ultrasonic transducer structure in the present invention, between piezoelectric layer 10 and back sheet 50, load a layer thickness is simulation result after the tuning layer 40 of 1/4 wavelength thickness, relative Fig. 2, the sensitivity of ultrasonic transducer of the present invention improves 2.19dB, and-6dB bandwidth have dropped 5.4%; High resistant back sheet 50, on the basis that Fig. 7 emulates, is substituted low-resistance back sheet 50 by Fig. 8, and simulation result shows that sensitivity improves 0.58dB again, and the reflectivity curve Changing Pattern that this and Fig. 4 represent also is consistent.Fig. 2, Fig. 6 ~ 8 emulated data comparative analyses are as shown in the table:
Table 1 Fig. 2, Fig. 6 ~ 8 are the emulated data comparative analysis table after loading different-thickness Low ESR tuning layer
To sum up emulated data is known, in ultrasonic transducer structure provided by the invention, by loading the tuning layer 40 that a layer thickness scope is 1/5 ~ 4/5 wavelength between piezoelectric layer 10 and back sheet 50, preferably, the thickness of this tuning layer 40 is 1/2 wavelength or 1/4 wavelength, the echoing characteristics of the tuning ultrasonic transducer of equal energy and spectral shape.Wherein, wavelength is determined by ratio between the velocity of sound of described tuning layer 40 and the operating frequency of described tuning layer 40.
In addition, adopt low-impedance tuning layer 40, by arranging the acoustic impedance of tuning layer 40, preferably, the acoustic impedance range of described tuning layer 40 is 1 ~ 4MRayl, but is not limited thereto scope; By arranging the thickness of tuning layer 40, preferably, the thickness range of described tuning layer 40 is 1/5 ~ 4/5 wavelength, but is not limited thereto thickness range; By arranging the impedanoe ratio of tuning layer 40 and back sheet 50, preferably, described tuning layer 40 is 0.01 ~ 1.0 with the impedanoe ratio scope of described back sheet 50; The effective reflection coefficient at tuning described piezoelectric layer 10 back side is to promote sensitivity, and the tuning waveforms amplitude at described piezoelectric layer 10 back side and the superposition of phase place are to improve time domain response and the frequency response curve of ultrasonic transducer.
Please refer to Fig. 3, further, the acoustic impedance of described matching layer 20 is between described piezoelectric layer 10 and the acoustic impedance of described tuning layer 40, and the acoustic impedance of described tuning layer 40 is much smaller than the acoustic impedance of described piezoelectric layer 10.Be appreciated that described tuning layer 40 adopts the Low ESR acoustical material differed greatly with the acoustic impedance of described piezoelectric layer 10, such as, the composite of epoxy resin, plastics and filling low-density powder.Because the described acoustic impedance of piezoelectric layer 10 and the acoustic impedance of human body differ greatly, be unfavorable for that acoustic signals is propagated to human body, but the acoustic impedance of described matching layer 20 is between described piezoelectric layer 10 and the acoustic impedance of described tuning layer 40, described matching layer 20 plays transitional function, the acoustic transmission that can effectively be produced by described piezoelectric layer 10 is in human body, and then human body tissue signal better.
Further, described matching layer 20 is at least one deck.Described matching layer 20 can be two-layer or two-layer more than.The acoustic impedance of described matching layer 20 is less than the acoustic impedance of described piezoelectric layer 10, and the acoustic impedance of the described matching layer of each layer 20 reduces gradually away from described piezoelectric layer 10.
The embodiment of the present invention additionally provides a kind of probe, comprises above-mentioned ultrasonic transducer.
Further, described probe is doppler transducer, one-dimensional array probe or multidimensional face array probe.
Probe of the present invention is applicable to the probe in the fields such as medical treatment and industrial non-destructive flaw detection, such as, comprises the ultrasonic probe of single-piezoelectric layer, two piezoelectric layer 10, one-dimensional array and two-dimensional array.
Please refer to Fig. 3, Fig. 9 and Figure 10, the embodiment of the present invention additionally provides a kind of manufacture method of ultrasonic transducer, comprises the following steps:
Polarization process, provides the piezoelectric layer 10 be made up of piezoelectric and both sides plated electrode to described piezoelectric layer 10, applies voltage complete polarization to described piezoelectric layer 10 both sides;
Acoustic layer is set, matching layer 20 and tuning layer 40 are set respectively in the front-end and back-end of described piezoelectric layer 10;
Cutting acoustic layer, cut described acoustic layer along described matching layer 20 towards described tuning layer 40, the grooving 60 formed gos deep into described tuning layer 40, forms multiple independently array element to cut;
Back sheet 50 is set, described back sheet 50 is set in described tuning layer 40 side and is relatively arranged on described tuning layer 40 both sides to make described back sheet 50 with described piezoelectric layer 10.Be appreciated that at described tuning layer 40 side perfusion backing glue and solidify to form back sheet 50, at described matching layer 20 side perfusion lens glue, finally carrying out encapsulation process.
The manufacture method of the ultrasonic transducer that the embodiment of the present invention provides by arranging tuning layer 40 between piezoelectric layer 10 and back sheet 50, effectively to utilize the acoustic signals of described piezoelectric layer 10 radiation backward, avoid acoustic wave segment signal to enter described back sheet 50 to be attenuated with the form of heat energy, utilize the pulse reverb of the tuning ultrasonic probe of this tuning layer 40 simultaneously, thus improve time domain response and the frequency domain response of ultrasonic transducer to a certain extent.From the angle of process implementing, the introducing of described tuning layer 40 is also played described piezoelectric layer 10 and is supported fixation preferably, cut processing technology before being conducive to improving probe, suppress probe crosstalk phenomenon, particularly in the manufacture of convex array probe, there is obvious advantage.
In this embodiment, the electrode formed in described piezoelectric layer 10 both sides can be the electrode that silver electrode, copper electrode, gold electrode or other materials are made.
In this embodiment, described piezoelectric layer 10 is made up of piezoelectric, because piezoelectric itself does not possess piezo-electric effect, needs to carry out polarization process to described piezoelectric layer 10 for this reason.Oil bath polarization method is adopted in polarization processing procedure, namely at a certain temperature, high direct voltage is loaded into described piezoelectric layer 10 both sides to form electrode, after polarization process terminates, according to polarised direction, the electrode of both sides is labeled as signal earth polar and signal positive pole respectively, for transmitting and receiving ultrasonic wave.
Further, the manufacture method of described ultrasonic transducer also comprises step:
Acoustic lens 30 is set, described acoustic lens 30 is set in described matching layer 20 side and is relatively arranged on described matching layer 20 both sides to make described acoustic lens 30 with described piezoelectric layer 10.Preferably, this acoustic lens 30 can be substituted by acoustic elements such as sound lag sheets.
Further, in the step arranging acoustic layer, the acoustic impedance of the described matching layer of described each layer 20 is less than the acoustic impedance of described piezoelectric layer 10, and reduces gradually from described piezoelectric layer 10.The acoustic impedance of described matching layer 20 is between described piezoelectric layer 10 and the acoustic impedance of described tuning layer 40, and the acoustic impedance of described tuning layer 40 is much smaller than the acoustic impedance of described piezoelectric layer 10.Be appreciated that described tuning layer 40 adopts the Low ESR acoustical material differed greatly with the acoustic impedance of described piezoelectric layer 10, such as, the composite of epoxy resin, plastics and filling low-density powder.Because the described acoustic impedance of piezoelectric layer 10 and the acoustic impedance of human body differ greatly, be unfavorable for that acoustic signals is propagated to human body, but the acoustic impedance of described matching layer 20 is between described piezoelectric layer 10 and the acoustic impedance of described tuning layer 40, described matching layer 20 plays transitional function, the acoustic transmission that can effectively be produced by described piezoelectric layer 10 is in human body, and then human body tissue signal better.
Please refer to Figure 10, further, in the step of cutting acoustic layer, the described matching layer 20 after cutting and described piezoelectric layer 10 are cut all completely and are worn and partly cut described tuning layer 40.Be appreciated that, described tuning layer 40 plays a part fixing and supports described piezoelectric layer 10, before enforcement cutting process process in, cut along described matching layer 20 towards described tuning layer 40 side, and described matching layer 20 and described piezoelectric layer 10 are cut completely wear and part cut described tuning layer 40, effectively to suppress the crosstalk phenomenon of adjacent array element part, improve the performance of ultrasonic transducer.
Please refer to Figure 10, further, in the step of cutting acoustic layer, the quantity of described array element is 64,96,128 or other quantity.Be appreciated that and adopt the modes such as machine cuts that piezoelectric layer 10 complete for a slice is cut into multiple array element in cutting process, the quantity of array element can be 64,96 or 128, and the quantity of described array element also can be other quantity.
Further, in the step of cutting acoustic layer, the array element after cutting is according to linear array or curvature arc shooting.Be appreciated that, array element after cutting can obtain linear array probe or phased array probe according to linear array, convex array probe can be obtained according to certain curvature arc shooting, when cutting described piezoelectric layer 10, described tuning layer 40 is utilized to play fixing and supporting role to described piezoelectric layer 10, comparatively be easy to be processed into convex array probe, and effectively can suppress the crosstalk phenomenon between array element, improve the performance of ultrasonic transducer.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. a ultrasonic transducer, is characterized in that, comprising:
Piezoelectric layer, for forward or backward radiative acoustic wave signal, the both sides of described piezoelectric layer are plated respectively and are provided with electrode;
Matching layer, is arranged at described piezoelectric layer front end and acoustic signals for transmitting forward directed radiation;
Tuning layer, be arranged at described piezoelectric layer rear end, and described piezoelectric layer is between described tuning layer and described matching layer;
Back sheet, for absorbing the acoustic signals of described piezoelectric layer radiation backward, and is positioned at the side deviating from described piezoelectric layer of described tuning layer.
2. ultrasonic transducer as claimed in claim 1, is characterized in that, the acoustic impedance values Z of described tuning layer
t, described back sheet acoustic impedance values Z
bwith the acoustic impedance values Z of described piezoelectric layer
pmeet relational expression simultaneously:
0 < Z
t< Z
band
3. ultrasonic transducer as claimed in claim 2, it is characterized in that, the acoustic impedance range of described tuning layer is 1 ~ 4MRayl.
4. ultrasonic transducer as claimed in claim 1, is characterized in that, the acoustic impedance values Z of described tuning layer
t, described back sheet acoustic impedance values Z
bwith the acoustic impedance values Z of described piezoelectric layer
pmeet relational expression simultaneously:
Z
t> Z
b> 0 and
5. ultrasonic transducer as claimed in claim 4, it is characterized in that, the acoustic impedance of described tuning layer is 40 ~ 110MRayl.
6. ultrasonic transducer as claimed in claim 1, it is characterized in that, the thickness range of described tuning layer is 1/5 ~ 4/5 wavelength, and wherein, described wavelength is determined by the ratio between the velocity of sound of described tuning layer and the operating frequency of described tuning layer.
7. ultrasonic transducer as claimed in claim 6, it is characterized in that, the thickness of described tuning layer is 1/2 wavelength or 1/4 wavelength.
8. a probe, it is characterized in that, comprise ultrasonic transducer, described ultrasonic transducer comprises:
Piezoelectric layer, for forward or backward radiative acoustic wave signal, the both sides of described piezoelectric layer are plated respectively and are provided with electrode;
Matching layer, is arranged at described piezoelectric layer front end and acoustic signals for transmitting forward directed radiation;
Tuning layer, be arranged at described piezoelectric layer rear end, and described piezoelectric layer is between described tuning layer and described matching layer;
Back sheet, for absorbing the acoustic signals of described piezoelectric layer radiation backward, and is positioned at the side deviating from described piezoelectric layer of described tuning layer.
9. pop one's head in as claimed in claim 8, it is characterized in that, described probe is doppler transducer, one-dimensional array probe or multidimensional face array probe.
10. a manufacture method for ultrasonic transducer, is characterized in that, comprises the following steps:
Polarization process, provides the piezoelectric layer be made up of piezoelectric and both sides plated electrode to described piezoelectric layer, applies voltage complete polarization to described piezoelectric layer both sides;
Acoustic layer is set, matching layer and tuning layer are set respectively in the front-end and back-end of described piezoelectric layer;
Cutting acoustic layer, cut described acoustic layer along described matching layer towards described tuning layer, the grooving formed gos deep into described tuning layer, forms multiple independently array element to cut;
Back sheet is set, described back sheet is set in described tuning layer side and is relatively arranged on described tuning layer both sides to make described back sheet and described piezoelectric layer.
The manufacture method of 11. ultrasonic transducers as claimed in claim 10, is characterized in that, in the step of cutting acoustic layer, the described matching layer after cutting and described piezoelectric layer are cut all completely and worn and partly cut described tuning layer.
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