CN104716239B - LED structure and forming method thereof - Google Patents
LED structure and forming method thereof Download PDFInfo
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- CN104716239B CN104716239B CN201310676275.2A CN201310676275A CN104716239B CN 104716239 B CN104716239 B CN 104716239B CN 201310676275 A CN201310676275 A CN 201310676275A CN 104716239 B CN104716239 B CN 104716239B
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Abstract
The invention discloses a kind of LED structure and forming method thereof.Wherein the LED structure includes：Substrate；First doping type nitride semiconductor layer；First electrode；MQW, MQW includes the multiple well layer and multiple barrier layer being alternately arranged in the cycle, wherein, there is p-type doped region in well layer, wherein, when the first doping type is n-type, p-type doped region is located at the front end of well layer, or, when the first doping type is p-type, p-type doped region is located at the rear end of well layer；Second doping type nitride semiconductor layer；And second electrode.The LED structure of the present invention is obviously improved the hole concentration inside well region by locally carrying out p-type doping in well region, while add electronics overlaps probability with the wave function distribution in hole, finally luminous efficiency is got a promotion.
Description
Technical field
The invention belongs to field of semiconductor manufacture, and in particular to a kind of LED structure and forming method thereof.
Background technology
Because LED has the advantages that environmental protection, energy-conservation, long lifespan, what is obtained is widely applied.Especially gallium nitride（GaN）
Base LED can send the light of the visible ray intermediate waves length such as purple light, blue light, so that LED solid-state illuminations are big in production and living
Amount is used and is possibly realized.
The basic structure of current GaN base LED structure as shown in figure 1, include substrate 1, cushion 2, intrinsic GaN from bottom to top
Layer 3, n-GaN layers 4, MQW 5, p-GaN layer 6, N electrode 7, P electrode 8 etc..Wherein, MQW 5 is by InGaN well layer a
Periodically alternating growth is formed with GaN barrier layer b, as shown in Figure 2.Principle luminous LED is：N-GaN provides electronics, p-GaN
Hole, electronics and the hole recombination luminescence in MQW 5 are provided.Specifically, InGaN well layer a is that electronics is empty in MQW 5
Cave recombination luminescence area, GaN barrier layer b plays a part of separating each well layer a.
Due to going out very thin GaN barrier layer and well layer in same substrate successively epitaxial growth in actual MQW
InGaN, the two lattice constant Incomplete matching causes occur unit cell distortion, and then piezoelectricity generation electrostatic field, energy band run-off the straight,
Final result shows as the two ends that electronics and hole are gathered in SQW respectively.Partly led because GaN material is easily formed n-type in itself
Body, p-type doping is relatively difficult, and the quality in hole is more than electron mobility less than electronics, so electron concentration is remote in well layer
More than hole concentration, as shown in Figure 3.Because electron hole distribution is misaligned too low with hole concentration in well layer, existing GaN
Base LED luminous efficiency is not high.
The content of the invention
It is contemplated that at least solving the low technical problem of above-mentioned luminous efficiency to a certain extent.Therefore, the present invention
One purpose is the LED structure for proposing that a kind of luminous efficiency is high.It is another object of the present invention to propose a kind of luminous effect
The forming method of the high LED structure of rate.
To achieve the above object, the LED structure of embodiment according to a first aspect of the present invention, can include：Substrate；First mixes
Miscellany type nitride semiconductor layer, the first doping type nitride semiconductor layer is located on the substrate；First electrode, institute
First electrode is stated on the first area of the first doping type nitride semiconductor layer；MQW, the Multiple-quantum
Trap is located on the second area of the first doping type nitride semiconductor layer, and the MQW is alternately arranged including the cycle
Multiple well layer and multiple barrier layer, wherein, in the well layer have p-type doped region, wherein, when first doping type be n
During type, the p-type doped region is located at the front end of the well layer, or, when first doping type is p-type, the p-type
Doped region is located at the rear end of the well layer；Second doping type nitride semiconductor layer, the second doping type nitride half
Conductor layer is located on the MQW；Second electrode, the second electrode is partly led positioned at the second doping type nitride
On body layer.
LED structure according to embodiments of the present invention, by locally carrying out p-type doping in well region, makes the hole inside well region
Concentration is obviously improved, while add electronics overlaps probability with the wave function distribution in hole, finally obtains luminous efficiency
Lifting.
In addition, LED structure according to embodiments of the present invention can also have following additional technical feature：
In an embodiment of the invention, the thickness of the p-type doped region is 2/3rds of the well layer thickness.
In an embodiment of the invention, the doping concentration of the p-type doped region is 1015-1020cm-3。
In an embodiment of the invention, the MQW is obtained by mocvd process
's.
In an embodiment of the invention, the well layer material is InGaN or AlGaN, and the barrier material layer is GaN.
To achieve the above object, the forming method of the LED structure of embodiment according to a second aspect of the present invention, can include：
Substrate is provided；The first doping type nitride semiconductor layer is formed over the substrate；In the first doping type nitride
First electrode is formed on the first area of semiconductor layer；On the second area of the first doping type nitride semiconductor layer
MQW is formed, the MQW includes the multiple well layer and multiple barrier layer being alternately arranged in the cycle, wherein, in the well layer
With p-type doped region, wherein, when first doping type is n-type, the p-type doped region is located at the front end of the well layer,
Or, when first doping type is p-type, the p-type doped region is located at the rear end of the well layer；In the MQW
The second doping type nitride semiconductor layer of upper formation；The second electricity is formed on the second doping type nitride semiconductor layer
Pole.
The forming method of LED structure according to embodiments of the present invention, by locally carrying out p-type doping in well region, makes well region
Internal hole concentration is obviously improved, while add electronics overlaps probability with the wave function distribution in hole, finally makes hair
Light efficiency gets a promotion.
In addition, the forming method of LED structure according to embodiments of the present invention can also have following additional technical feature：
In an embodiment of the invention, the thickness of the p-type doped region is 2/3rds of the well layer thickness.
In an embodiment of the invention, the doping concentration of the p-type doped region is 1015-1020cm-3。
In an embodiment of the invention, the MQW is formed by mocvd process.
In an embodiment of the invention, the well layer material is InGaN or AlGaN, and the barrier material layer is GaN.
The additional aspect and advantage of the present invention will be set forth in part in the description, and will partly become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become from description of the accompanying drawings below to embodiment is combined
Substantially and be readily appreciated that, wherein：
Fig. 1 is the structural representation of existing LED structure；
Fig. 2 is the schematic diagram and energy band diagram of MQW in existing LED structure；
Fig. 3 is the distribution schematic diagram of electron concentration in existing LED structure inside well layer and hole concentration；
Fig. 4 is the structural representation of the LED structure of one embodiment of the invention；
Fig. 5 is the structural representation of the MQW in Fig. 4；
Fig. 6 be one embodiment of the invention LED structure in the distribution of electron concentration and hole concentration inside well layer show
It is intended to.
Fig. 7 is the flow chart of the forming method of the LED structure of one embodiment of the invention.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to for explaining the present invention, and be not considered as limiting the invention.
In the description of the invention, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", " on ", " under ", "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom " " interior ", " outer ", " up time
The orientation or position relationship of the instruction such as pin ", " counterclockwise " are, based on orientation shown in the drawings or position relationship, to be for only for ease of
The description present invention and simplified description, rather than indicate or imply that the device or element of meaning must have specific orientation, Yi Te
Fixed azimuth configuration and operation, therefore be not considered as limiting the invention.In addition, term " first ", " second " are only used for
Purpose is described, and it is not intended that indicating or implying relative importance or the implicit quantity for indicating indicated technical characteristic.
Thus, " first " is defined, one or more this feature can be expressed or be implicitly included to the feature of " second ".At this
In the description of invention, " multiple " are meant that two or more, unless otherwise specifically defined.
In the present invention, unless otherwise clearly defined and limited, term " installation ", " connected ", " connection ", " fixation " etc.
Term should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；It can be machine
Tool is connected or electrically connected；Can be joined directly together, can also be indirectly connected to by intermediary, can be two members
Connection inside part.For the ordinary skill in the art, above-mentioned term can be understood in this hair as the case may be
Concrete meaning in bright.
LED structure of the present invention and forming method thereof is discussed in detail with reference to Figure of description.
Fig. 4 is the structural representation of the LED structure of one embodiment of the invention, and Fig. 5 is MQW in the LED structure
Structural representation.As shown in Figure 4 and Figure 5, the LED structure can include：Substrate 1001, the cushion on substrate 1001
1002nd, on cushion 1002 intrinsic nitride semiconductor layer 1003, positioned at intrinsic nitride semiconductor layer 1003 it
On the first doping type nitride semiconductor layer 1004, the firstth area positioned at the first doping type nitride semiconductor layer 1004
First electrode 1005 on domain, the Multiple-quantum on the second area of the first doping type nitride semiconductor layer 1004
Trap 1006, the second doping type nitride semiconductor layer 1007 on MQW 1006, positioned at the second doping type
Transparency conducting layer 1008 on nitride semiconductor layer 1007, and the second electrode on transparency conducting layer 1008
1009.Wherein, MQW 1006 is alternately arranged including the cycle multiple well layer a and multiple barrier layer b, wherein, have in well layer a
P-type doped region c.When the first doping type is n-type, p-type doped region c is located at well layer a front end, i.e., positioned at adjacent substrate 1001
Side, one end that formerly growth is formed.When the first doping type is p-type, p-type doped region c is located at well layer a rear end, ascends the throne
In the one end formed away from the side of substrate 1001, in rear growth.
It should be noted that in above-described embodiment, cushion 1002, intrinsic layer nitride semiconductor layer 1003, transparent lead
Electric layer 1008 is optional rather than necessary.Also, those skilled in the art can also set up electronics resistance in addition as needed
The structures such as barrier, current barrier layer.
Well layer is uniform undoped structure in existing LED structure.As shown in figure 3, being leaned on inside the well layer of existing LED structure
The side of nearly n doping type nitride-based semiconductors is formed with hole-rich, close to the side of p doping type nitride-based semiconductors
Electron rich area is formed with, and the hole concentration of hole-rich is less than electron rich area.The LED structure of the embodiment of the present invention exists
Side inside well layer close to n doping type nitride-based semiconductors introduces p-type doped region, dense using p-type doped region high hole
The characteristics of spending, the hole concentration to the region is compensated, so that the electron hole proportion adjustment in whole well region is to conjunction
Reason ratio 1:1 or so, Carrier recombination probability is added, so as to improve luminous efficiency.The present invention is not to electron rich area
P-type doping is carried out, to avoid significantly reducing electron concentration, so as to influence overall luminous efficacy.To sum up, the embodiment of the present invention
LED structure makes the Carrier Profile inside well region as shown in fig. 6, hole can be made dense by locally carrying out p-type doping in well region
Degree is obviously improved, while add electronics overlaps probability with the wave function distribution in hole, is finally put forward luminous efficiency
Rise.
In one embodiment of the invention, substrate 1001 can be using graphical or non-patterned plain film substrate, and material can
For multiple materials such as sapphire, SiC, gallium nitride single crystals.
In one embodiment of the invention, cushion 1002, the doping class of intrinsic nitride semiconductor layer 1003 and first
Type nitride semiconductor layer 1004 can pass through metal organic chemical compound vapor deposition（MOCVD）Method extension is obtained.Cushion
1002nd, the material and thickness of the intrinsic doping type nitride semiconductor layer 1004 of nitride semiconductor layer 1003 and first can roots
Flexibly selected according to the performance of target LED structure, the technology belongs to the known of those skilled in the art, does not repeat herein.
In one embodiment of the invention, p-type doped region c thickness is 2/3rds of well layer a thickness.Need explanation
, the ratio of the thickness of p-type doped region and well layer can also be other numerical value.The thickness proportion is too small, then the sky in well region
Cave concentration cannot be compensated effectively；The thickness proportion is excessive, then may reduce the electron concentration in electron rich area.Test table
Bright, effect is best when the ratio of the thickness of p-type doped region and well layer is 2/3rds.
In one embodiment of the invention, p-type doped region c doping concentration is 1015-1020cm-3.Need explanation
It is that p-type doped region doping concentration is alternatively other numerical value.Doping concentration is too small, then the hole concentration in well region cannot be enough
Compensation；Doping concentration is excessive, then causes hole concentration in well region to be more than electron concentration, the two ratio is unbalanced, causes sky
Cave is wasted.Experiment shows that doping concentration is 1015-1020cm-3Shi Xiaoguo is best.
In one embodiment of the invention, the doped chemical in p-type doped region c can be the diads such as Mg.
In one embodiment of the invention, MQW 1006 is by metal-organic chemical vapor deposition equipment
（MOCVD）What technique was obtained.MOCVD can easily realize well layer barrier layer alternate epitaxial growth process, while can be very square
Just the local doping in well layer is realized.For example, the thickness of the time control p-type doped region of doped source can be passed through by adjustment
Degree, the concentration that doped source can be passed through by adjustment controls the concentration of p-type doped region.
In one embodiment of the invention, well layer material a can be InGaN or AlGaN, and barrier layer b materials can be
GaN.InGaN/GaN MQWs are commonly used in blue green light LED structure, and AlGaN/GaN MQWs are commonly used to purple
In light or UV-light luminous LED structure.
As shown in fig. 7, the forming method of LED structure according to embodiments of the present invention, may comprise steps of：
S1., substrate is provided.
S2. the first doping type nitride semiconductor layer is formed on substrate.
S3. first electrode is formed on the first area of the first doping type nitride semiconductor layer.
S4. MQW is formed on the second area of the first doping type nitride semiconductor layer.MQW includes
Multiple well layer and multiple barrier layer that cycle is alternately arranged, wherein, there is p-type doped region in well layer.When the first doping type is n-type
When, p-type doped region is located at the front end of well layer.Or, when the first doping type is p-type, p-type doped region is located at after well layer
End.
S5. the second doping type nitride semiconductor layer is formed on MQW.
S6. second electrode is formed on the second doping type nitride semiconductor layer.
It should be noted that those skilled in the art can also add following optional step to improve LED junction as needed
The illumination effect of structure：Cushion is formed between substrate and the first doping type nitride semiconductor layer and intrinsic nitride is partly led
Body layer；Transparency conducting layer is formed between the second doping type nitride semiconductor layer and the second electrode lay；Set up electronic blocking
Layer, current barrier layer etc..
And, it is necessary to explanation, step S3 execution sequence can be adjusted flexibly, require nothing more than step S3 step S2 it
Perform afterwards, do not change the essence of the present invention.
In the forming method of the LED structure of the embodiment of the present invention, by locally carrying out p-type doping in well region, trap can be made
Hole concentration inside area is obviously improved, while add electronics overlaps probability with the wave function distribution in hole, is finally made
Luminous efficiency gets a promotion.
In one embodiment of the invention, substrate can be indigo plant using graphical or non-patterned plain film substrate, material
The multiple materials such as jewel, SiC, gallium nitride single crystal.
In one embodiment of the invention, the thickness of p-type doped region is 2/3rds of the thickness of well layer.Need explanation
, the ratio of the thickness of p-type doped region and well layer can also be other numerical value.The thickness proportion is too small, then the sky in well region
Cave concentration cannot be compensated effectively；The thickness proportion is excessive, then may reduce the electron concentration in electron rich area.Test table
Bright, effect is best when the ratio of the thickness of p-type doped region and well layer is 2/3rds.
In one embodiment of the invention, the doping concentration of p-type doped region is 1015-1020cm-3.It should be noted that
P-type doped region doping concentration is alternatively other numerical value.Doping concentration is too small, then the hole concentration in well region cannot get enough benefits
Repay；Doping concentration is excessive, then causes hole concentration in well region to be more than electron concentration, the two ratio is unbalanced, causes hole wave
Take.Experiment shows that doping concentration is 1015-1020cm-3Shi Xiaoguo is best.
In one embodiment of the invention, the doped chemical in p-type doped region can be the diads such as Mg.
In one embodiment of the invention, MQW is by metal-organic chemical vapor deposition equipment（MOCVD）Work
What skill was obtained.MOCVD can easily realize well layer barrier layer alternate epitaxial growth process, while trap can be realized easily
Local doping in layer.For example, the thickness of the time control p-type doped region of doped source can be passed through by adjustment, it can pass through
Adjustment is passed through the concentration of the concentration control p-type doped region of doped source.
In one embodiment of the invention, well layer material can be InGaN or AlGaN, and barrier material layer can be GaN.
InGaN/GaN MQWs are commonly used in blue green light LED structure, AlGaN/GaN MQWs be commonly used to purple light or
In UV-light luminous LED structure.
To make those skilled in the art more fully understand the present invention, the formation of a GaN base LED structure is described in detail below
Process.
A., Sapphire Substrate is provided.
B. MOCVD method epitaxial growth buffer is utilized on a sapphire substrate.
C. by temperature, pressure, III/V in the intrinsic GaN of high growth temperature on the buffer layer, intrinsic GaN growth course
The epitaxial growth of gallium nitride high-crystal quality is realized in the control of the technological parameters such as compounds of group ratio.
D. silicon doping n-GaN is grown on intrinsic GaN.
E. InGaN/GaN MQWs are grown by MOCVD on n-GaN and is used as luminescent layer.The MQW includes 1-
The well layer and barrier layer of the alternating growth in 20 cycles.Every layer of InGaN well layer thickness is 2~3 nanometers, and every layer of GaN barrier layer thickness is 8
~15 nanometers.The growth temperature of multiple quantum well light emitting layer is 700~850 DEG C.Grow during each well layer, grow first 2/3
Two luxuriant magnesium steam are passed through during InGaN well layer to carry out Mg2+Doping, doping concentration is 1018, after growth during 1/3 InGaN well layer
Doped source is closed, without doping.
F. AlGaN electronic barrier layers are grown on MQW.
G. the p-GaN of mg-doped is grown on AlGaN electronic barrier layers.Then, the Mg ions adulterated in p-GaN are swashed
It is living.Activation can take the mode annealed in the case where temperature is 600-800 DEG C of vacuum or nitrogen atmosphere.
H. transparent conductive layer is grown using the method for evaporation sputter etc. on p-GaN.
I. subregion is etched into n-GaN layers using methods such as ICP etchings and chemical etchings.
J. metal P electrode is prepared on transparent conductive layer, and metal N electrode is prepared on exposed n-GaN layers.
Electrode can be Cr, Ti, Pt, Au sandwich construction, or various metals alloy.
K. PECVD method applying silicon oxide insulating barriers are used in transparent conductive layer and epitaxial layer side.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means to combine specific features, structure, material or the spy that the embodiment or example are described
Point is contained at least one embodiment of the present invention or example.Moreover, specific features, structure, material or the feature of description
Can in an appropriate manner it be combined in any one or more embodiments or example.Although having been shown and described above
Embodiments of the invention, but above-described embodiment is not considered as limiting the invention, and one of ordinary skill in the art is not
Above-described embodiment can be changed, changed within the scope of the invention in the case of the principle and objective that depart from the present invention,
Replace and modification.
Claims (10)
1. a kind of LED structure, it is characterised in that including：
Substrate；
First doping type nitride semiconductor layer, the first doping type nitride semiconductor layer is located on the substrate；
First electrode, the first electrode is located on the first area of the first doping type nitride semiconductor layer；
MQW, the MQW is located on the second area of the first doping type nitride semiconductor layer, described
MQW includes the multiple well layer and multiple barrier layer being alternately arranged in the cycle, wherein, there is p-type doped region in the well layer, its
In, when first doping type is n-type, the p-type doped region is located at the side of the adjacent substrate of the well layer, or,
When first doping type is p-type, the p-type doped region is located at the side of the remote substrate of the well layer；
Second doping type nitride semiconductor layer, the second doping type nitride semiconductor layer is located at the MQW
On；
Second electrode, the second electrode is located on the second doping type nitride semiconductor layer.
2. LED structure as claimed in claim 1, it is characterised in that the thickness of the p-type doped region is the well layer thickness
2/3rds.
3. LED structure as claimed in claim 1, it is characterised in that the doping concentration of the p-type doped region is 1015-1020cm-3。
4. LED structure as claimed in claim 1, it is characterised in that the MQW is by metal organic-matter chemical gas
Phase depositing operation is obtained.
5. LED structure as claimed in claim 1, it is characterised in that the well layer material is InGaN or AlGaN, the barrier layer
Material is GaN.
6. a kind of forming method of LED structure, it is characterised in that comprise the following steps：
Substrate is provided；
The first doping type nitride semiconductor layer is formed over the substrate；
First electrode is formed on the first area of the first doping type nitride semiconductor layer；
MQW is formed on the second area of the first doping type nitride semiconductor layer, the MQW includes
Multiple well layer and multiple barrier layer that cycle is alternately arranged, wherein, there is p-type doped region in the well layer, wherein, when described first
When doping type is n-type, the p-type doped region is located at the side of the adjacent substrate of the well layer, or, when the described first doping
When type is p-type, the p-type doped region is located at the side of the remote substrate of the well layer；
The second doping type nitride semiconductor layer is formed on the MQW；
Second electrode is formed on the second doping type nitride semiconductor layer.
7. the forming method of LED structure as claimed in claim 6, it is characterised in that the thickness of the p-type doped region is described
2/3rds of well layer thickness.
8. the forming method of LED structure as claimed in claim 6, it is characterised in that the doping concentration of the p-type doped region is
1015-1020cm-3。
9. the forming method of LED structure as claimed in claim 6, it is characterised in that heavy by metal-organic chemical vapor
Product technique forms the MQW.
10. the forming method of LED structure as claimed in claim 6, it is characterised in that the well layer material be InGaN or
AlGaN, the barrier material layer is GaN.
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| CN102280547A (en) * | 2011-08-31 | 2011-12-14 | 厦门大学 | GaN semiconductor luminotron with P-type active region |
| CN102683526A (en) * | 2011-03-15 | 2012-09-19 | 新世纪光电股份有限公司 | Nitrides semiconductor light-emitting structure |
| CN102891229A (en) * | 2012-09-27 | 2013-01-23 | 中国科学院半导体研究所 | Nitride semiconductor material light emitting diode and preparation method thereof |
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2013
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090051333A (en) * | 2007-11-19 | 2009-05-22 | 삼성전기주식회사 | Nitride semiconductor device |
| CN102683526A (en) * | 2011-03-15 | 2012-09-19 | 新世纪光电股份有限公司 | Nitrides semiconductor light-emitting structure |
| CN102280547A (en) * | 2011-08-31 | 2011-12-14 | 厦门大学 | GaN semiconductor luminotron with P-type active region |
| CN102891229A (en) * | 2012-09-27 | 2013-01-23 | 中国科学院半导体研究所 | Nitride semiconductor material light emitting diode and preparation method thereof |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder |