CN104716213B - Photovoltaic battery module and preparation method thereof - Google Patents
Photovoltaic battery module and preparation method thereof Download PDFInfo
- Publication number
- CN104716213B CN104716213B CN201510074160.5A CN201510074160A CN104716213B CN 104716213 B CN104716213 B CN 104716213B CN 201510074160 A CN201510074160 A CN 201510074160A CN 104716213 B CN104716213 B CN 104716213B
- Authority
- CN
- China
- Prior art keywords
- conducting wire
- interconnection
- curing type
- cell piece
- electrocondution slurry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of photovoltaic battery module and preparation method thereof, the interconnection conducting wire of photovoltaic battery module is connect with thin grid line and function ceramics film by curing type electrocondution slurry.The production method of the photovoltaic battery module is：The interconnection conducting wire for coating curing type electrocondution slurry is overlayed and is cured behind the surface of cell piece.Or curing type electrocondution slurry is printed on behind the surface of cell piece and again overlays interconnection conducting wire on curing type electrocondution slurry, the connection of interconnection conducting wire and thin grid line and function ceramics film is realized by curing.Or the surface of the cell piece of photovoltaic battery module also has main gate line made of the solidification of curing type electrocondution slurry.The beneficial effects of the invention are as follows：1) interconnection conducting wire no longer needs to connect with cell piece by traditional main gate line of high temperature sintering, thus is conducive to simplify processing step, improves the performance of cell piece.2) long-time stability that component is improved using scaling powder and protective film are avoided.
Description
Technical field
The present invention relates to a kind of photovoltaic battery modules and preparation method thereof.
Background technology
Currently, industry majority photovoltaic cell and component manufacturer, using the battery electricity of 2~5 main gate lines (Bus bar)
Pole is designed and mutual contact mode.First, in the manufacturing process of photovoltaic cell, the front of a cell piece, by silk-screen printing and
The mode of high temperature sintering forms the thin grid line of about 55~90 60~100um width.These thin grid lines generally pass through 2
The main gate line of 1.8mm connects together.Then, in the manufacturing process of photovoltaic module, the main gate line of cell piece by high temperature (~
200 DEG C) welding process and coated with Sn layers of copper interconnection conducting wire be electrically connected.The battery being collected by thin grid line
The photogenerated current on surface, is pooled in main gate line, is then transferred into about 0.4mm thickness, the painting Sn copper of 2mm wide interconnects on conducting wire.This
In, the width of main gate line is wider, and in electrical contact better, contact resistance is lower, is conducive to electricity conversion promotion.But main gate line
Wider, the shade masking amount caused by main gate line and corresponding interconnection conducting wire is also bigger, this causes photoelectric conversion efficiency again
It reduces.Consider contact resistance and two factor Competition of optical obscurations, at present oriented 5 main grid of industry, or even to using 15~50
Root carefully interconnects the trend without main gate line photovoltaic cell design transition that conducting wire is interconnected.
According to a kind of no main gate line photovoltaic cell scheme disclosed in Canadian Patent document CA 2496557, Canada's wound
New company Day4 using more circles carefully interconnect conducting wire (<1mm diameters) and transparent protective film combine mode prepare it is basic
Electrode connection unit.But in this design, round thin interconnection conducting wire is embedded into transparent protective film and is connected to photovoltaic electric
Pond piece, wherein transparent protective film are for improving navigability.Similar, it is also retouched in Germany Patent document DE10239845C1
One kind is stated contact wire is fixed on transparent protective film by means of optically transparent cohesive colloid and is subsequently fixed to light
Lie prostrate battery metal layer on without main gate line photovoltaic cell scheme.
It is improved without main gate line photovoltaic cell scheme, the use of round thin interconnection conducting wire disclosed in above patent document
Photovoltaic battery module reliability of structure.After this has benefited from round thin interconnection conductive line surfaces volume ratio increase, pliability increases
Add.Simultaneously as round thin interconnection arrangement of conductors is more disperseed, it may be connected to more silicon chip surfaces.Even if thering is part is hidden to split,
Still collapsed portion can be connected without influencing electric current collection by round thin interconnection conducting wire, enhance subassembly product reliability.
Without in main gate line photovoltaic cell scheme disclosed in above patent document, use industry normal if carefully interconnecting conducting wire
Painting tin copper wire technology, it is necessary to use scaling powder.The area coverage of thin interconnection conducting wire is small, can not image width copper bar it is equally intact
The region that covering scaling powder spraying is crossed.Therefore, the corrosivity of scaling powder causes, along near welding lead, to be easily formed " black line
Or blackspot " etc. a series of integrity problems.To avoid the above problem, the scheme of low melting point noble metal containing In may be used.In circle
Shape carefully interconnects conductive line surfaces and one layer of In metal is electroplated to replace original painting Sn techniques, so that it may to avoid scaling powder is used.But this
Sample can lead to relatively high cost.
If removing transparent protective film directly using the thin interconnection conducting wire of circle of plating In, after photovoltaic cell interconnection
In component lamination step, round thin interconnection conducting wire will be exposed to liquefied glue and connect material, in EVA or silica gel.We test hair
Existing, in lamination process, EVA can be upward out to round thin one, conducting wire of interconnection along the cambered surface of round thin interconnection conducting wire lower part
The thrust of battery surface may break pad, to influence the appearance and reliability of photovoltaic module.
In said program, since film and adhesive agent are maintained in solar cell module, it means that adhesive agent and film
There are relatively high requirements in terms of long-time stability, also lead to relatively high cost.
Invention content
The technical problem to be solved by the present invention is to：A kind of photovoltaic battery module and preparation method thereof is provided, was both avoided that
Using transparent protective film in CA 2496557 and noble metal In coating to reduce cost, and it is avoided that using scaling powder to ensure
Product quality.
The technical solution adopted by the present invention to solve the technical problems is：A kind of photovoltaic battery module, including cell piece, electricity
The surface of pond piece has the function ceramics film around thin grid line and thin grid line, also has interconnection conducting wire on the surface of cell piece,
Interconnection conducting wire is connect with thin grid line and function ceramics film by curing type electrocondution slurry.
It further limits, curing type electrocondution slurry is wrapped in the surface of interconnection conducting wire.
It further limits, curing type electrocondution slurry is heat-curing type electrocondution slurry, and solidification temperature is 50~600 DEG C, excellent
Selection of land solidification temperature is 100~300 DEG C.
It further limits, interconnects the width of conducting wire between 0.03~1.5mm, highly between 0.03~0.4mm, interconnection
The quantity of conducting wire is 3~50, it is preferable that the radical for interconnecting conducting wire is 15~30.
Further limit, interconnect the bottom flat of conducting wire, it is preferable that its cross sectional shape is rectangular, triangle, it is semicircle or
The combination of above-mentioned three kinds of shapes.
It further limits, the conductive filler in curing type electrocondution slurry is Cu or Al or Ni or Ag or their alloy.
It further limits, the material for interconnecting conducting wire is Cu or Al or Ni or Ag or their alloy.
Curing type electrocondution slurry is coated in interconnection wire table by a kind of production method of above-mentioned photovoltaic battery module first
Then face overlays the interconnection conducting wire for coating curing type electrocondution slurry on the surface of cell piece, in consolidating for curing type electrocondution slurry
Curing type electrocondution slurry is cured under the conditions of change, realizes the connection of interconnection conducting wire and thin grid line and function ceramics film.
The production method of another above-mentioned photovoltaic battery module, is first printed curing type electrocondution slurry by way of printing
Then brush overlays interconnection conducting wire on curing type electrocondution slurry, on the surface of cell piece in the solidification of curing type electrocondution slurry
Under the conditions of curing type electrocondution slurry is cured, realize interconnection conducting wire and thin grid line and function ceramics film connection.
A kind of photovoltaic battery module, including cell piece, cell piece surface have the function of making pottery around thin grid line and thin grid line
Porcelain film on the surface of cell piece also there is main gate line made of the solidification of curing type electrocondution slurry, the main gate line to be located at thin grid line
With the top of function ceramics film, and is formed and connected with thin grid line and function ceramics film in solidification.
The solderability requirement of curing type electrocondution slurry is higher, and cost is higher, to reduce the cost of electrocondution slurry and improving weldering
Reliability is connect, is further limited, the upper pad having for being connect with main gate line of cell piece, interconnection conductors pass through pad
It is connect with main gate line.
The beneficial effects of the invention are as follows：1) interconnection conducting wire no longer needs that (slurry high temperature sintering is simultaneously worn by traditional main gate line
The function ceramics films such as SiNx, AlOx of saturating battery surface are formed) it is connect with cell piece, thus reduce the corruption to electrocondution slurry
Corrosion requirement can be conducive to simplify processing step, improve the performance of cell piece to avoid the use of the high temperature glass powder such as PbO.
2) by curing while curing type electrocondution slurry and interconnection conducting wire, the more thin interconnection conducting wire of generally less than 0.5mm is avoided
Under can not use scaling powder, and need using protective film the case where, improve the long-time stability of component.
Description of the drawings
Present invention will be further explained below with reference to the attached drawings and examples；
Fig. 1 a1 are the structural schematic diagrams of traditional photovoltaic battery module；
Fig. 1 a2 are the structural schematic diagrams of the photovoltaic battery module of the present invention；
Fig. 1 b1 are the sectional views of the thin grid line part of traditional photovoltaic battery module；
Fig. 1 b2 are the sectional views of the thin grid line part of the photovoltaic battery module of the present invention；
Fig. 1 c1 are the sectional views of the main gate line part of traditional photovoltaic battery module；
Fig. 1 c2 are the sectional views of the interconnection main gate line part of the photovoltaic battery module of the present invention；
Fig. 1 d1 are the sectional views of the interconnection conducting wire of traditional photovoltaic battery module；
Fig. 1 d2 are the sectional views of the interconnection conducting wire of the photovoltaic battery module of the present invention；
Fig. 2 a are another structural schematic diagrams of the photovoltaic battery module of the present invention；
Fig. 2 b are the third structural schematic diagrams of the photovoltaic battery module of the present invention；
In figure, 1. thin grid lines, 2. function ceramics films, 3. interconnection main gate lines, 31. interconnection conducting wires, 32. curing type conductive pastes
Material, 4. main gate lines, 5. doped layers, 6. auxiliary connection sheet metals.
Specific implementation mode
A kind of photovoltaic battery module, including cell piece, the surface of cell piece have the work(around thin grid line 1 and thin grid line 1
Energy ceramic membrane 2 also has interconnection conducting wire 31, interconnection conducting wire 31 and thin grid line 1 and function ceramics film 2 on the surface of cell piece
It is connected by curing type electrocondution slurry 32.Wherein thin grid line 1 is directly electrically connected with cell piece with preliminary collected current, interconnects conducting wire
31 form good electrical connection by curing type electrocondution slurry 32 and thin grid line 1, further collect and transmit electric current.Interconnect conducting wire 31
Mechanical connection is formed by curing type electrocondution slurry 32 and function ceramics film 2, but curing type electrocondution slurry 32 does not penetrate function
Ceramic membrane 2, function ceramics film 2 such as SiNx, AlOx or the InTiOx on cell piece surface.For electric conductivity function ceramics
Film, such as InTiOx, curing type electrocondution slurry 32 and InTiOx also form electrical connection in addition to being formed and being mechanically connected.
The width of conducting wire 31 is interconnected between 0.03~1.5mm, highly between 0.03~0.4mm, interconnection conducting wire 31
Quantity is 3~50, it is preferable that the radical of interconnection conducting wire 31 is 15~30.Interconnect the bottom flat of conducting wire 31, it is preferable that
Its cross sectional shape is rectangular, triangle, the combination of semicircle or above-mentioned three kinds of shapes.Interconnect conducting wire 31 material be Cu or Al or
Ni or Ag or their alloy.
Conductive filler in curing type electrocondution slurry 32 is Cu or Al or Ni or Ag or their alloy.
It is 50~600 DEG C that curing type electrocondution slurry 32, which uses heat-curing type electrocondution slurry, solidification temperature, it is preferable that Gu
Change type electrocondution slurry 32 use heat-curing type Cu electrocondution slurries or heat-curing type Ag electrocondution slurries, solidification temperature be 100~
300℃。
There are two types of production methods for above-mentioned photovoltaic battery module, are respectively：
A kind of production method of photovoltaic battery module is：Curing type electrocondution slurry 32 is coated in interconnection 31 table of conducting wire first
Then face overlays the interconnection conducting wire 31 for coating curing type electrocondution slurry 32 on the surface of cell piece, in curing type electrocondution slurry
Curing type electrocondution slurry is cured under 32 condition of cure, realizes interconnection conducting wire 31 and thin grid line 1 and function ceramics film 2
Connection.
Alternatively, a kind of production method of photovoltaic battery module is：The side that curing type electrocondution slurry 32 is passed through into printing first
Formula is printed on the surface of cell piece, then overlays interconnection conducting wire 31 on curing type electrocondution slurry 32, in curing type conductive paste
Curing type electrocondution slurry is cured under the condition of cure of material 32, realizes that interconnection conducting wire 31 and thin grid line 1 and function ceramics are thin
The connection of film 2.
Fig. 1 a2, Fig. 1 b2, Fig. 1 c2, shown in Fig. 1 d2 it is made with the production method of the first photovoltaic battery module
Photovoltaic battery module；For ease of comparing and illustrating the innovative point of the present invention, Fig. 1 a1, Fig. 1 b1, Fig. 1 c1, Fig. 1 d1 also give
The structural schematic diagram of original photovoltaic battery module.
As shown in Fig. 1 a1,1 bandpass of thin grid line on the cell piece surface of former photovoltaic battery module is in 30~100um, height
Degree is in 15~25um, by the way that high temperature sintering is formed at 600~900 DEG C after burning infiltration type Ag electrocondution slurry silk-screen printings.Former photovoltaic
The main gate line 4 on the cell piece surface of battery module is similar with thin grid line 1, is mainly made of Ag, by after silk-screen printing 600~
High temperature sintering is formed at 900 DEG C.Also there is the painting Sn copper strips as interconnection conducting wire 31 on the surface of cell piece, at 200 DEG C or so
At a temperature of and main gate line 4 be welded together.Function ceramics film 2 on the surface of cell piece is that passivation falls into photosphere, generally
There is the SiNx layer of passivation and light trapping effect.Wave in Fig. 1 a1 represents the meaning of breviary.It is outside wave and another to interconnect conducting wire 31
The back side of an outer cell piece connects.These are all very familiar to row insider, so being omitted with wave.In Fig. 1 b1,
It is doped layer 5 that passivation, which is fallen into below photosphere, is n-type doping layer in conventional batteries piece.The thin of conventional batteries piece is shown in Fig. 1 b1
The sectional view of grid line part, it can be seen that the thin grid line 1 of original cell piece is worn by 600~900 DEG C of high-sintering process
Passivation falls into photosphere thoroughly and the doped layer 5 of cell piece is electrically connected together.The main gate line of conventional batteries piece is shown in Fig. 1 c1
Partial sectional view.Here main gate line 4 falls into the doped layer 5 of photosphere and cell piece also through passivation in high-temperature sintering process
It is electrically connected together.In the upper surface of main gate line 4, a painting Sn copper strips and main gate line 4 are welded together.
The curing type electrocondution slurry 32 that the present invention is given in Fig. 1 a2, Fig. 1 b2, Fig. 1 c2, Fig. 1 d2 is wrapped in interconnection conducting wire
The structural schematic diagram of the photovoltaic battery module on 31 surface.Thin grid line 1 can be consistent with thin grid line 1 in Fig. 1 a1 in Fig. 1 a2
, since the number for interconnecting conducting wire 31 in Fig. 1 a2 is more, so the disconnected grid design of thin grid line 1 is more, also can more save for making
Make the dosage of the burning infiltration type Ag electrocondution slurries of thin grid line 1.Curing type electrocondution slurry 32 is coated in 31 surface of interconnection conducting wire and constitutes mutually
Join main gate line 3, the function of main gate line 4 and interconnection conducting wire 31 in substitution Fig. 1 a1.Auxiliary connection sheet metal 6 is selectable unit, is used for
The interconnection conducting wire 31 with connection cell piece front and back connects respectively.Thin grid line 1, passivation in Fig. 1 b2 and Fig. 1 b1 fall into light
Layer, doped layer 5 are completely the same, and main innovation is related to 4 part of main gate line, as shown in Fig. 1 c2.Interconnect main gate line 3 and thin grid line 1
It intersects vertically.Pass through heating (generally 100-600 DEG C) solidification, curing type electrocondution slurry 32 and thin grid line 1, curing type conductive paste
Material 32 and interconnection conducting wire 31 form good electric connection.
It is compared with original battery technology, the main function of curing type electrocondution slurry 32 is：1) interconnection conducting wire 31 and thin is completed
Electrical connection between grid line 1；2) mechanical connection between interconnection main gate line 3 and function ceramics film 2 is completed, but does not burn function
Ceramic membrane 2.The main gate line 4 of primary battery technology and interconnection conducting wire 31 are merged by the above-mentioned design of the present invention, and will be led
The function and material requirements of grid line 4 and thin grid line 1 are completely separated, and are changed and first burning infiltration type electrocondution slurry are used to form main gate line 4, so
Weld the process for applying Sn copper strips in main gate line 4 again afterwards, avoiding problems the uses of corrosive flux, so as to avoid black
The hidden danger of quality such as spot, black line.This design also avoids the use of high-cost plating In copper conductors.
Interconnection main grids of Fig. 1 d1 and Fig. 1 d2 to the conducting wire 31 containing interconnection of interconnection conducting wire 31 and the present invention in original technology
The cross sectional shape of line 3 is compared.As shown in Fig. 1 d1, original technology from 3 main gate lines 4 excessively to no main gate line when,
The section for interconnecting conducting wire 31 changes from rectangle as circle.In component lamination step after cell piece interconnection, circular interconnection
Conducting wire 31 will be exposed to liquefied glue and connect material, in EVA or silica gel.We test discovery, and in lamination process, EVA can edge
Thrust of the cambered surface to the upward out cell piece surface of circular 31 1, conducting wire of interconnection for 31 lower part of circular interconnection conducting wire, draws
Disconnected pad, to influence the appearance and reliability of photovoltaic module.
Therefore, the present invention provides a kind of improved interconnection wire shapes, interconnect the bottom flat of conducting wire 31, it is preferable that
Its cross sectional shape is rectangular, triangle, the combination of semicircle or above-mentioned three kinds of shapes.As shown in Fig. 1 d2, due to interconnecting conducting wire 31
Bottom flat, while thering is curing type electrocondution slurry 32 and the mechanical connection of the function ceramics film 2 on cell piece surface to act on, in layer
During pressure, only down force, as shown in phantom in FIG..
Embodiment 1：For the embodiment of conventional P-type battery, conducting wire and heat-curing type Cu electrocondution slurries are interconnected using Cu.
15 thin Cu lines are selected to make the interconnection conducting wire 31 between cell piece and cell piece, the section of thin Cu lines is square,
The square length of side is 0.3mm.Thin Cu lines surface does not apply Sn layers.
Heat-curing type Cu electrocondution slurries are coated on the surface of thin Cu lines.The solid content of heat-curing type Cu electrocondution slurries is
60-90%, 3.5~6g/cm of density3.Coating thickness is about 5um.
Thin Cu lines are stretched by haulage gear, select roller bearing to brush mode conductive to thin Cu lines coating heat-curing type Cu
Slurry.The region of coating heat-curing type Cu electrocondution slurries only limits the region for needing to connect with cell piece on thin Cu lines, in thin Cu
Region between the haulage gear of line, cell piece, is not coated by heat-curing type Cu electrocondution slurries.
The thin Cu lines for being coated with heat-curing type Cu electrocondution slurries are overlayed in cell piece surface and friendship vertical with thin grid line 1
It is wrong.
Cell piece is the p-type cell piece of routine, and the function ceramics film 2 on surface has been the SiNx layer for being passivated light trapping effect,
Thickness is 80nm.Thin grid line 1 is the thin grid lines of Ag.The thin grid line electrocondution slurry of silk-screen printing penetrates SiNx in 800 DEG C of sintering of high temperature
Layer forms electrical connection.
By infrared heating, heat-curing type Cu electrocondution slurries are heated to 150 DEG C, make heat-curing type Cu electrocondution slurries
The electrical connection between interconnection main gate line 3 and thin grid line 1 is completed in solidification；It completes between interconnection main gate line 3 and function ceramics film 2
Mechanical connection.Heat-curing type Cu electrocondution slurries do not penetrate SiNx layer.As shown in Fig. 1 c2 figures.
The interconnection that interconnection main gate line 3 and the back side of adjacent cell piece can be completed with same method, as shown in Fig. 1 a2,
The interconnection main gate line 3 for connecting the positive interconnection main gate line 3 of cell piece and the connection adjacent cell piece back side connects metal by auxiliary
Piece 6 is connected two-by-two, cuts off extra interconnection conducting wire 31.The encapsulating materials such as EVA, glass are laid with, laminating packaging forms photovoltaic group
Part product.
Embodiment 2：For the embodiment of thin film silicon/crystalline silicon heterojunction battery, using Cu interconnection conducting wires and it is heating and curing
Type Cu electrocondution slurries.
15 thin Cu lines are selected to make the interconnection conducting wire 31 between cell piece and cell piece, the section of thin Cu lines is square,
The square length of side is 0.3mm.Thin Cu lines surface does not apply Sn layers.
Heat-curing type Cu electrocondution slurries are coated on the surface of thin Cu lines.The solid content of heat-curing type Cu electrocondution slurries is
60-90%, 3.5~6g/cm of density3.Coating thickness is about 5um.
Thin Cu lines are stretched by haulage gear, select roller bearing to brush mode conductive to thin Cu lines coating heat-curing type Cu
Slurry.The region of coating heat-curing type Cu electrocondution slurries only limits the region for needing to connect with cell piece on thin Cu lines, in thin Cu
Region between the haulage gear of line, cell piece, is not coated by heat-curing type Cu electrocondution slurries.
The thin Cu lines for being coated with heat-curing type Cu electrocondution slurries are overlayed in cell piece surface and friendship vertical with thin grid line 1
It is wrong.
Cell piece is thin film silicon/crystalline silicon heterojunction cell piece, and the function ceramics film 2 on surface is InTiOx layers, silk screen
The Ag slurries of printing exist.Thin grid line 1 is the thin grid lines of Ag.To avoid non-crystalline silicon high temperature in thin film silicon/crystalline silicon heterojunction cell piece brilliant
Passivation effect is reduced after change and battery performance, the thin grid line electrocondution slurry of silk-screen printing exist<200 DEG C of temperature sintering.
By infrared heating, heat-curing type Cu electrocondution slurries are heated to 150 DEG C, make heat-curing type Cu electrocondution slurries
The electrical connection between interconnection main gate line 3 and thin grid line 1 is completed in solidification；It completes between interconnection main gate line 3 and function ceramics film 2
Mechanically and electrically.Heat-curing type Cu electrocondution slurries do not penetrate InTiOx layers.As shown in Fig. 1 c2 figures.
Since the function ceramics film 2 of thin film silicon/crystalline silicon heterojunction battery is transparent conductive body InTiOx, and common electricity
The insulator SiNx in pond is different, so in this example, interconnecting main gate line 3 and function ceramics film 2 being formed simultaneously and mechanically and electrically connects
It connects.
Embodiment 3：For the embodiment of thin film silicon/crystalline silicon heterojunction battery, using Cu interconnection conducting wires and it is heating and curing
Type Ag electrocondution slurries.Describe identical with other of embodiment 2, only the thermohardening type Cu electrocondution slurries of low-temperature setting are replaced
At the heat-curing type Ag electrocondution slurries of common low-temperature setting in photovoltaic cell industry.
Embodiment 4：For the embodiment of thin film silicon/crystalline silicon heterojunction battery, the Cu interconnection conducting wires and heat of plating Ni are used
Curing type Cu electrocondution slurries.With embodiment 2 other describe it is identical, only Cu interconnection conducting wire outside plate Ni.
Embodiment 5：For the embodiment of thin film silicon/crystalline silicon heterojunction battery, the Cu interconnection conducting wires and heat of plating Ni are used
Curing type Ag electrocondution slurries.With embodiment 3 other describe it is identical, only Cu interconnection conducting wire outside plate Ni.
The core of aforementioned present invention specific embodiment is：1) curing type electrocondution slurry 32 and interconnection conducting wire 31 is used to replace passing
The main gate line 4 of system, interconnection conducting wire 31 no longer need the biography of the function ceramics films 2 such as SiNx, AlOx by penetrating battery surface
The main gate line 4 of system is connect with cell piece, thus reduces the corrosivity requirement to electrocondution slurry, can be to avoid the high temperature glass such as PbO
The use of glass powder.2) by curing while curing type electrocondution slurry 32 and interconnection conducting wire 31, generally less than 0.5mm is solved
More thin interconnection conducting wire under the problem of can not using scaling powder, the interconnection conducting wire 31 also solved in lamination process floats up
The problem of.
In line with these core concepts, the present invention can also have other simple variants.
For example, a kind of photovoltaic battery module, including cell piece, cell piece surface have around thin grid line 1 and thin grid line 1
Function ceramics film 2, main gate line 4 made of also there is curing type electrocondution slurry 32 to cure on the surface of cell piece, the main gate line 4
Positioned at the top of thin grid line 1 and function ceramics film 2, and is formed and connected with thin grid line 1 and function ceramics film 2 in solidification.
Main gate line 4 is directly formed by curing using curing type electrocondution slurry 32 in the photovoltaic battery module, interconnection conducting wire 31 is only in cell piece
A few pad such as edge welding junction be connected with main gate line 4.
Alternatively, interconnection main gate line 3 forms the interconnection between reticular structure progress cell piece by conducting wire item 7.
It is further illustrated below by 2 specific embodiments.
Embodiment 6：Main gate line 4 in cell piece is directly cured by curing type electrocondution slurry 32.
As shown in Figure 2 a, 32 vertical interlaced of curing type electrocondution slurry is on thin grid line 1.Phase in other descriptions and embodiment 1
Together, there is no interconnection copper conductors inside the curing type electrocondution slurry 32 but in embodiment 6.Only have just in the edge of cell piece
It is connected with curing type electrocondution slurry 32 in the conducting wire item 7 of welding.Connection between two panels cell piece is completed by common process.
Embodiment 7：The interconnection main gate line 3 and conducting wire item 7 be made of the interconnection conducting wire 31 of package curing type electrocondution slurry 32
Form the interconnection between reticular structure progress cell piece.
As shown in Figure 2 b, interconnection main gate line 3 and the conducting wire item 7 and cell piece and battery that are connected and fixed interconnection main gate line 3
Connection is formed netted between the auxiliary connection sheet metal 6 connected between piece, is had certain mechanical strength, is convenient for manual manipulation.
Claims (8)
1. a kind of photovoltaic battery module, including cell piece, the surface of cell piece has the function of making pottery around thin grid line and thin grid line
Porcelain film, it is characterized in that：Also there is interconnection conducting wire, the interconnection conducting wire and thin grid line and work(on the surface of the cell piece
Energy ceramic membrane is connected by curing type electrocondution slurry,
The interconnection main gate line that the interconnection conducting wire of curing type electrocondution slurry is constituted and conducting wire bar shaped reticulate structure carry out cell piece it
Between interconnection,
Interconnection main gate line connects with the auxiliary connected between the conducting wire item and cell piece and cell piece of interconnection main gate line is connected and fixed
Connect connection between sheet metal formed it is netted, conducting wire item be located at cell piece surface and with interconnection main gate line vertical connection, auxiliary connects
Sheet metal is located on the outside of cell piece, with the conducting wire vertical connection for extending cell piece.
2. photovoltaic battery module according to claim 1, it is characterized in that：The curing type electrocondution slurry is wrapped in interconnection
The surface of conducting wire.
3. photovoltaic battery module according to claim 1 or 2, it is characterized in that：The curing type electrocondution slurry is heating
Curing type electrocondution slurry, solidification temperature are 50~600 DEG C.
4. photovoltaic battery module according to claim 1 or 2, it is characterized in that：The width of the interconnection conducting wire is 0.03
Between~1.5mm, highly between 0.03~0.4mm, the quantity for interconnecting conducting wire is 3~50.
5. photovoltaic battery module according to claim 1 or 2, it is characterized in that：The cross sectional shape of the interconnection conducting wire is
Rectangular, triangle and semicircle.
6. photovoltaic battery module according to claim 1 or 2, it is characterized in that：Leading in the curing type electrocondution slurry
Electric filler is Cu or Al or Ni or Ag or their alloy, the material of the described interconnection conducting wire be Cu or Al or Ni or Ag or it
Alloy.
7. a kind of production method of photovoltaic battery module described in claim 1, it is characterized in that：The curing type is led first
Plasma-based material is coated in interconnection conductive line surfaces, and the interconnection conducting wire for coating curing type electrocondution slurry is then overlayed the table in cell piece
Face cures curing type electrocondution slurry under the condition of cure of curing type electrocondution slurry, realizes interconnection conducting wire and thin grid line
With the connection of function ceramics film.
8. a kind of production method of photovoltaic battery module described in claim 1, it is characterized in that：The curing type is led first
Plasma-based material is printed on the surface of cell piece by way of printing, then overlays interconnection conducting wire on curing type electrocondution slurry,
Curing type electrocondution slurry is cured under the condition of cure of curing type electrocondution slurry, realizes interconnection conducting wire and thin grid line and work(
The connection of energy ceramic membrane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510074160.5A CN104716213B (en) | 2015-01-29 | 2015-02-12 | Photovoltaic battery module and preparation method thereof |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2015100464570 | 2015-01-29 | ||
| CN201510046457 | 2015-01-29 | ||
| CN201510074160.5A CN104716213B (en) | 2015-01-29 | 2015-02-12 | Photovoltaic battery module and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104716213A CN104716213A (en) | 2015-06-17 |
| CN104716213B true CN104716213B (en) | 2018-07-20 |
Family
ID=53415355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510074160.5A Active CN104716213B (en) | 2015-01-29 | 2015-02-12 | Photovoltaic battery module and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104716213B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106847968A (en) * | 2017-02-17 | 2017-06-13 | 华东理工大学 | A kind of method for packing of two-sided crystal silicon heterojunction dereliction grid solar cell piece |
| CN109148617B (en) * | 2018-08-13 | 2021-05-14 | 苏州迈为科技股份有限公司 | Method for preparing conductive wire with aspect ratio based on solar cell panel |
| CN111403496A (en) * | 2018-12-28 | 2020-07-10 | 泰州隆基乐叶光伏科技有限公司 | Solar cell interconnection structure |
| CN111403524A (en) * | 2018-12-28 | 2020-07-10 | 泰州隆基乐叶光伏科技有限公司 | Double-sided solar cell interconnection structure |
| CN111403490B (en) * | 2018-12-28 | 2022-09-13 | 泰州隆基乐叶光伏科技有限公司 | Preparation method of solar cell interconnection structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6130380A (en) * | 1997-04-28 | 2000-10-10 | Sharp Kabushiki Kaisha | Solar cell and fabrication method thereof |
| CN102569438A (en) * | 2012-01-31 | 2012-07-11 | 乐山职业技术学院 | Solar cell capable of saving silver paste and preparation process thereof |
| CN103022261A (en) * | 2012-12-28 | 2013-04-03 | 英利能源（中国）有限公司 | Method and system for producing solar cells |
| CN204558491U (en) * | 2015-01-29 | 2015-08-12 | 信阳师范学院 | A kind of photovoltaic battery module |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101404296B (en) * | 2008-11-13 | 2011-09-07 | 中山大学 | Improved solar cell front electrode and its production method |
-
2015
- 2015-02-12 CN CN201510074160.5A patent/CN104716213B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6130380A (en) * | 1997-04-28 | 2000-10-10 | Sharp Kabushiki Kaisha | Solar cell and fabrication method thereof |
| CN102569438A (en) * | 2012-01-31 | 2012-07-11 | 乐山职业技术学院 | Solar cell capable of saving silver paste and preparation process thereof |
| CN103022261A (en) * | 2012-12-28 | 2013-04-03 | 英利能源（中国）有限公司 | Method and system for producing solar cells |
| CN204558491U (en) * | 2015-01-29 | 2015-08-12 | 信阳师范学院 | A kind of photovoltaic battery module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104716213A (en) | 2015-06-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106206817B (en) | Solar cell module and preparation method thereof | |
| CN104716213B (en) | Photovoltaic battery module and preparation method thereof | |
| CN104282788A (en) | Main-grid-free high-efficiency back contact solar cell module, main-grid-free high-efficiency back contact solar cell assembly and manufacturing technology of main-grid-free high-efficiency back contact solar cell assembly | |
| US10388811B2 (en) | Process for preparing a photovoltaic cell | |
| JP6291003B2 (en) | Solar cell and solar cell module | |
| CN204946915U (en) | Solar module | |
| CN109888033A (en) | Solar module | |
| CN104269454B (en) | High-efficiency back contact solar cell back sheet without main grids, high-efficiency back contact solar cell assembly without main grids and manufacturing technology | |
| KR20180072000A (en) | Solar cell and process of manufacture of solar cell | |
| CN209981250U (en) | Back contact laminated solar cell string and laminated solar cell assembly | |
| CN103681894A (en) | Solar cell module and manufacturing method thereof | |
| CN204204882U (en) | Without main grid high efficiency back contact solar cell assembly | |
| CN102769060A (en) | Novel solar battery interconnection structure and manufacturing method thereof | |
| CN103367546A (en) | Preparation technology of photovoltaic battery front-face electrode | |
| CN104319301A (en) | Main gate-free, high-efficiency and back-contact solar battery backplane, assembly and preparation process | |
| CN204558491U (en) | A kind of photovoltaic battery module | |
| CN101702411B (en) | Wiring silica-based solar cell structure | |
| WO2012128284A1 (en) | Rear surface electrode-type solar cell, manufacturing method for rear surface electrode-type solar cell, and solar cell module | |
| CN109904261A (en) | Solar module | |
| CN204216058U (en) | Solar battery sheet | |
| CN209675306U (en) | Solar module | |
| CN209675307U (en) | Solar module | |
| CN103366854A (en) | Composite electrode material for preparing positive electrode of photovoltaic cell | |
| KR101791480B1 (en) | Solar cell and process of manufacture of solar cell | |
| CN204088340U (en) | Without main grid high efficiency back contact solar cell backboard |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220224 Address after: 213000 Room 202, building 1, No. 8, Lanxiang Road, West Taihu science and Technology Industrial Park, Wujin District, Changzhou City, Jiangsu Province Patentee after: Changzhou heterojunction management consulting partnership (L.P.) Address before: 464000 Changan Road, the Shihe River District, Xinyang, Henan Province, No. 237 Patentee before: XINYANG NORMAL University |