CN104716207A - Structure and manufacturing technology of flexible thin film solar cell - Google Patents
Structure and manufacturing technology of flexible thin film solar cell Download PDFInfo
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- CN104716207A CN104716207A CN201310694176.7A CN201310694176A CN104716207A CN 104716207 A CN104716207 A CN 104716207A CN 201310694176 A CN201310694176 A CN 201310694176A CN 104716207 A CN104716207 A CN 104716207A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a structure and manufacturing technology of a flexible thin film solar cell, and belongs to the technical field of solar cells. The structure of the flexible thin film solar cell comprises a flexible substrate, a silver or aluminum thin film, a first-layer transparent conducting thin film, a thin film solar cell body and a second-layer transparent conducting thin film which are sequentially overlapped. A strip-shaped insulating layer is manufactured on the flexible substrate, a first electrode is fixedly connected to the insulating layer, a second electrode is fixedly connected to the flexible substrate, the first electrode is connected with the second-layer transparent conducting thin film through metal leads, the second electrode is directly electrically connected with the silver or aluminum thin film through the flexible substrate, or the second electrode is electrically connected with the silver or aluminum thin film through the metal leads. The electrodes of the flexible thin film solar cell are located on the back face of the battery or the back face of the cell substrate, shielding of the incident light face of the cell is reduced, and the conversion efficiency of the cell is improved, which is more beneficial to connection between cells.
Description
Technical field
The present invention relates to solar cell preparing technical field, be specifically related to a kind of structure and preparation technology of flexible thin-film solar cell.
Background technology
Thin film solar cell can be divided into rigid substrate solar cell (being such as substrate with glass) and flexible substrate solar cell (such as with polyimides or stainless steel for substrate) two large classes according to substrate performance difference.For glass substrate, flexible substrate has lightweight, collapsible, the not easily advantage such as broken, the flexible thin-film solar cell of preparation has high power-weight ratio, is specially adapted to special purpose and the civil use such as tent, roof such as dirigible, stratosphere balloon detector.
From published Patent, patent CN200610016182 discloses a kind of structure and preparation method of flexible CIGS solar cell; Patent CN200620039938 discloses a kind of structure of flexible amorphous silicon thin-film solar cell; Patent CN200810236695 discloses a kind of preparation method of flexible amorphous silicon thin-film solar cell; CN201010549329 discloses a kind of flexible CIGS solar cell and preparation method thereof; Patent CN201310300555 discloses a kind of preparation method of flexible CZTS solar cell; Patent CN201010191156 discloses a kind of preparation method of flexible thin-film solar cell integrated package.
As mentioned above, the content of publication focuses mostly in flexible thin-film solar cell structure and preparation scheme, rarely have the patent about electrode preparation and connection open, and published patent CN201010191156, wherein the electrode of flexible thin-film solar cell component is all at the incidence surface of battery, and this has blocked the incidence surface of battery to a certain extent, reduce the conversion efficiency of battery, meanwhile, the flexible wire connecting battery unit is flat type copper wire or intertexture bare wire, and this also have impact on the attractive in appearance of battery.Therefore, the electrode structure and the preparation method that improve flexible thin-film solar cell is further necessary.
Summary of the invention
The object of this invention is to provide a kind of structure and preparation technology of flexible thin-film solar cell.The electrode of this battery is all prepared in the back side of battery, and thus the front of battery is without any blocking, and increases the sensitive surface of battery, improves the conversion efficiency of battery, and makes battery more attractive in appearance, solves the problem proposed in above-mentioned background technology.
Technical scheme of the present invention is:
A structure for flexible thin-film solar cell, comprise stack gradually flexible substrate, silver or aluminium film, ground floor transparent conductive film, thin film solar cell and second layer transparent conductive film; Side on its outer surface of described flexible substrate is shaped with banded insulating barrier (by the side coating insulating cement in outer substrate surface or the preparation of stickup insulating tape), affixed first electrode on described insulating barrier, (without ribbon insulating barrier place) affixed second electrode on its outer surface of described flexible substrate; First electrode is connected with second layer transparent conductive film by metal lead wire; When flexible substrate is conducted electricity, the second electrode is directly electrically connected with silver or aluminium film by flexible substrate; When flexible substrate is non-conductive, the second electrode is connected with silver or aluminium thin-film electro by metal lead wire.
Described flexible substrate comprises flexible conductive substrates and the non-conductive substrate of flexibility, and described flexible conductive substrates is stainless steel foil, aluminium foil or Copper Foil, and the non-conductive substrate of described flexibility is the film of macromolecular material.
Described insulating barrier by plating silver band on the insulating layer or fixing silver strip and the first electrode affixed.
During described flexible substrate conduction, by silver-plated band on flexible substrates or welding silver strip the second electrode as battery; When described flexible substrate is non-conductive, silver-plated band or welding silver strip on flexible substrates, as the second electrode of battery after silver band or silver strip are bonded by metal lead wire and silver or aluminium film.
Described transparent conductive film is ITO, BZO or AZO.
Described thin film solar cell comprises the composite battery of one or more compositions in silicon thin-film battery (unijunction, ties more), copper indium gallium selenide cell, copper-zinc-tin-sulfur battery, cadmium telluride cells, organic battery, dye-sensitized cell and quantum dot cell.
The preparation technology of the structure of above-mentioned flexible thin-film solar cell, comprises the steps:
(1) silver or aluminium film is prepared on flexible substrates, the method thermal evaporation used or sputtering;
(2) as the flexible substrate for conduction, then step (3) is directly carried out; As being nonconducting flexible substrate, then by metal lead wire one end and silver-colored or aluminium film bonding, the other end of metal lead wire bonds with the silver band that flexible substrate is plated or the silver strip welded, as the second electrode of battery;
(3) on silver or aluminium film, ground floor transparent conductive film is prepared;
(4) thin film solar cell is prepared on transparent conductive film surface;
(5) second layer transparent conductive film is prepared on thin film solar cell surface;
(6) insulating cement is coated with on the surface (back side of battery) of flexible substrate or insulating tape forms banded insulating barrier, silver-plated band or welding silver strip on insulating barrier, then one end of metal lead wire is laid on second layer transparent conductive film, then the silver band be connected to by the other end of metal lead wire on insulating barrier or silver strip form the first electrode; As the flexible substrate for conduction, then continue making second electrode: silver-plated band or welding silver strip are as the second electrode of battery on flexible substrates.
When above-mentioned steps (3) or step (5) prepare transparent conductive film, as preparation ITO, institute's using method is thermal evaporation, electron beam evaporation or sputtering; As prepared BZO, the method used is LPCVD; As prepared AZO, the method used is sputtering.
Advantage of the present invention and good effect:
Electrode prepared by the present invention all at the back side of battery, is applicable to flexible thin-film solar cell.Flexible thin-film solar cell of the present invention is used to possess following advantage: 1) electrode of the present invention is all at the back side of battery or the back side of cell substrate, reduces blocking of battery incidence surface, improves the conversion efficiency of battery; 2) Facad structure of flexible thin-film solar cell of the present invention is single, more attractive in appearance; 3) electrode of flexible thin-film solar cell of the present invention is all at the back side of battery or the back side of cell substrate, is more conducive to the connection between battery.
Accompanying drawing explanation
Fig. 1 is the front and back of conductive substrates flexible thin-film solar cell of the present invention; In figure: (a) front; (b) back side.
Fig. 2 is the front and back of the non-conductive substrate flexibility thin film solar cell of the present invention; In figure: (a) front; (b) back side.
Fig. 3 is the back side based on conductive substrates all back-contact electrodes flexible thin-film solar cell.
Fig. 4 is the cross section based on conductive substrates all back-contact electrodes flexible thin-film solar cell.
Wherein, at the bottom of 11-stainless steel lining, 2-Ag films, 3-ground floor transparent conductive film, 4-thin film solar cell, 5-second layer transparent conductive film, 6-insulating barrier, 7-metal lead wire, 8-first electrode (silver strip electrode, positive pole), 9-second electrode (silver strip electrode, negative pole);
Fig. 5 is the back side based on non-conductive substrate all back-contact electrodes flexible thin-film solar cell; Wherein: (a) is pressed metal lead-in wire on Ag films; B () forms the second electrode for metal lead wire and silver strip are fixed on non-conductive substrate; C () is preparation first electrode.
Fig. 6 is the cross section based on non-conductive substrate all back-contact electrodes flexible thin-film solar cell.
Wherein: the non-conductive substrate of 12-, 2-Ag films, 3-ground floor transparent conductive film layer, 4-thin film solar cell, 5-second layer transparent conductive film, 6-insulating barrier, 7-metal lead wire, 8-first electrode (silver strip electrode), 9-second electrode (silver strip electrode).
Embodiment
Below in conjunction with specific embodiment, further illustrate concrete methods of realizing of the present invention, but the present invention is not limited to these specific embodiments.
According to the difference of flexible substrate electric conductivity, technical scheme of the present invention has following two kinds:
Technical scheme one:
(1) on the substrate of conduction, Ag films is prepared, the method thermal evaporation used or sputtering, prepare ground floor transparent conductive film more afterwards, as ITO, (institute's using method is thermal evaporation, electron beam evaporation, or sputtering), the method that BZO(uses is LPCVD), the method that AZO(uses is sputtering); (2) thin film solar cell is prepared on transparent conductive film surface, as silicon thin-film battery (unijunction, many knots), any several composite battery etc. of Copper Indium Gallium Selenide, copper-zinc-tin-sulfur, cadmium telluride, organic battery, dye-sensitized cell, quantum dot cell or more; (3) prepare second layer nesa coating on thin film solar cell surface, as ITO (institute's using method is thermal evaporation, electron beam evaporation, or sputters), the method that BZO(uses is LPCVD), the method that AZO(uses is sputtering); (4) back side of battery is coated with insulating cement or insulating tape; (5) one end of metal lead wire is laid on second layer transparent conductive film; Again the metal lead wire other end is formed the first electrode around being connected to metal tape (the silver-plated band on insulating barrier on conductive substrates or welding silver strip) to cell backside; (6) the second electrode is made: be welded to by metal tape (the silver-plated band on insulating barrier on conductive substrates or welding silver strip) in conductive substrates, form the second electrode, as shown in Fig. 1 (a)-(b).
Technical scheme two:
(1) on nonconducting substrate, Ag films is prepared, the method thermal evaporation used or sputtering; (2) with metal lead wire, back electrode metallic film (Ag films) is connected at substrate back, with metal belt sheet (the silver-plated band on substrate or weld silver strip) in conjunction with formation second electrode; (3) prepare ground floor transparent conductive film on Ag films surface after, as ITO (institute's using method is thermal evaporation, electron beam evaporation, or sputters), the method that BZO(uses is LPCVD), the method that AZO(uses is sputtering); (4) thin film solar cell is prepared on ground floor nesa coating surface, as silicon thin-film battery (unijunction, many knots), any several composite battery etc. of Copper Indium Gallium Selenide, copper-zinc-tin-sulfur, cadmium telluride, organic battery, dye-sensitized cell, quantum dot cell or more; (4) prepare second layer nesa coating on thin film solar cell surface, as ITO (institute's using method is thermal evaporation, electron beam evaporation, or sputters), the method that BZO(uses is LPCVD), the method that AZO(uses is sputtering); (5) back side (substrate surface side) of battery is coated with insulating cement or insulating tape, silver-plated band or welding silver strip on insulating cement or insulating tape; (6) metal lead wire is routed to above second layer transparent conductive film, then around the back side to battery, metal lead wire is welded on metal tape (silver-plated band or welding silver strip), forms the second electrode, as shown in Fig. 2 (a)-(b).
Embodiment 1
The present embodiment is structure based on the flexible thin-film solar cell of conductive substrates and preparation, with reference to figure 3-4:
1. 11 sides evaporation Ag films 2 on the surface at the bottom of stainless steel lining, thickness is ~ 100-1000nm, and the method for use is vacuum thermal evaporation;
2. on Ag films 2, prepare ground floor transparent conductive film 3, thickness is 100-500nm, is aluminum-doped zinc oxide films in the present embodiment, and resistivity is about 1E-4 ohmcm, and the method used is sputtering;
3. on aluminum-doped zinc oxide films 3, prepare thin film solar cell 4, the present embodiment is silicon-film solar-cell;
4. preparing second layer nesa coating 5 on the surface of silicon-film solar-cell, thickness range 70-200nm, is the zinc-oxide film of aluminium doping in the present embodiment, the method magnetron sputtering used;
5. at the bottom of stainless steel lining, banded insulating barrier 6 is prepared at 11 back sides, and by substrate back and edge brush insulating cement, or thin insulating tape forms, and this layer thickness is 0.01 – 1mm, and width is 5-10mm.
6. used by metal lead wire 7 high temperature gummed tape to be pasted onto on the second layer nesa coating 5 of battery, the edge of battery walked around by metal wire 7 simultaneously, is welded on by metal belt sheet 8 on metal lead wire 7, forms the first electrode of battery.
7. use laminating machine, 150 degree of condition laminated, make metal lead wire 7 and second layer transparent conductive film 5 and metal belt sheet 8 have good contact, throw off high temperature gummed tape afterwards.
8. make the second electrode 9, metal belt sheet (the second electrode) 9 to be welded at the bottom of stainless steel lining on 11 and to be formed.
Embodiment 2
The present embodiment is structure based on the flexible thin-film solar cell of non-conductive substrate and preparation, with reference to figure 5-6:
1. evaporation Ag films 2 on non-conductive substrate 12, thickness is 100 – 1000nm, and the method for use is thermal evaporation, or sputtering, plating (electrochemical method).
2. on Ag films 2, use laminating machine pressed metal to go between 7, walk around non-conductive substrate 12 and be fixed on non-conductive substrate 12 with silver strip 8, silver strip 8 width is 5mm, and the length walking around lead-in wire is 14mm, and the fixing metal method used that goes between is hot-press solidifying.
3. on Ag films 2, prepare ground floor transparent conductive film 3, thickness is 50-1000nm, and the present embodiment is zinc-oxide film, and the method used is vacuum evaporation, sputtering or electrochemical filming method, or LPCVD.
4. on zinc-oxide film, prepare thin film solar cell 4, as silicon thin-film battery (unijunction, ties more), any several composite battery etc. of Copper Indium Gallium Selenide, copper-zinc-tin-sulfur, cadmium telluride, organic battery, dye-sensitized cell, quantum dot cell or more.
5. prepare second layer transparent conductive film 5 on the surface of thin film solar cell 4, thickness is 70-200nm, and be the zinc oxide of aluminium doping or ITO in the present embodiment, the method used is LPCVD or sputtering, spraying.
6. on non-conductive substrate 12, prepare insulating barrier 6, be by the back side of substrate 12 and edge brush insulating cement or thin insulating tape, this layer thickness is about 0.01-1mm.
7. used by metal lead wire 7 rubberized fabric adhere on the second layer transparent conductive film 5 of battery, walk around the edge of battery simultaneously, be then pressed in by silver strip 9 on silver-colored line 7, the width of silver strip 9 is 5mm, and the length that battery walked around by silver-colored line 7 is 8mm.
8. use laminating machine laminating, make silver-colored line 7 and second layer transparent conductive film 5 and silver strip 9 good contact.
Above content is in conjunction with concrete execution mode further description made for the present invention, can not assert that specific embodiment of the invention is confined to these explanations.Make without departing from the inventive concept of the premise some substitute or distortion, and similar nature or purposes identical, all should be considered as belonging to protection scope of the present invention.
Claims (9)
1. a structure for flexible thin-film solar cell, is characterized in that: this structure comprise stack gradually flexible substrate, silver or aluminium film, ground floor transparent conductive film, thin film solar cell and second layer transparent conductive film; Side on its outer surface of described flexible substrate is shaped with banded insulating barrier, insulating barrier is that the side in outer substrate surface applies insulating cement or stickup insulating tape forms, affixed first electrode on described insulating barrier, affixed second electrode on its outer surface of described flexible substrate; First electrode is connected with second layer transparent conductive film by metal lead wire, and the second electrode is directly electrically connected with silver or aluminium film by flexible substrate, or the second electrode is connected with silver or aluminium thin-film electro by metal lead wire.
2. the structure of flexible thin-film solar cell according to claim 1, it is characterized in that: described flexible substrate comprises flexible conductive substrates and the non-conductive substrate of flexibility, described flexible conductive substrates is stainless steel foil, aluminium foil or Copper Foil, and the non-conductive substrate of described flexibility is the film of macromolecular material.
3. the structure of flexible thin-film solar cell according to claim 2, is characterized in that: when flexible substrate is conducted electricity, and the second electrode is directly electrically connected with silver or aluminium film by flexible substrate; When flexible substrate is non-conductive, the second electrode is connected with silver or aluminium thin-film electro by metal lead wire.
4. the structure of flexible thin-film solar cell according to claim 1, is characterized in that: described insulating barrier by plating silver band on the insulating layer or fixing silver strip and the first electrode affixed.
5. the structure of the flexible thin-film solar cell according to claim 1 or 3, is characterized in that: during described flexible substrate conduction, by silver-plated band on flexible substrates or welding silver strip the second electrode as battery; When described flexible substrate is non-conductive, silver-plated band or welding silver strip on flexible substrates, as the second electrode of battery after silver band or silver strip are bonded by metal lead wire and silver or aluminium film.
6. the structure of flexible thin-film solar cell according to claim 1, is characterized in that: described transparent conductive film is ITO, BZO or AZO.
7. the structure of flexible thin-film solar cell according to claim 1, is characterized in that: described thin film solar cell comprises the composite battery of one or more compositions in silicon thin-film battery, copper indium gallium selenide cell, copper-zinc-tin-sulfur battery, cadmium telluride cells, organic battery, dye-sensitized cell and quantum dot cell.
8. the preparation technology of flexible thin-film solar cell according to claim 1, is characterized in that: this technique comprises the steps:
(1) silver or aluminium film is prepared on flexible substrates, the method thermal evaporation used or sputtering;
(2) as the flexible substrate for conduction, then step (3) is directly carried out; As being nonconducting flexible substrate, then by metal lead wire one end and silver-colored or aluminium film bonding, the other end of metal lead wire bonds with the silver band that flexible substrate is plated or the silver strip welded, as the second electrode of battery;
(3) on silver or aluminium film, ground floor transparent conductive film is prepared;
(4) thin film solar cell is prepared on transparent conductive film surface;
(5) second layer transparent conductive film is prepared on thin film solar cell surface;
(6) banded insulating barrier is formed at the surface of flexible substrate painting insulating cement or insulating tape, silver-plated band or welding silver strip on insulating barrier, then one end of metal lead wire is laid on second layer transparent conductive film, then the silver band be connected to by the other end of metal lead wire on insulating barrier or silver strip form the first electrode; As the flexible substrate for conduction, then continue making second electrode: silver-plated band or welding silver strip are as the second electrode of battery on flexible substrates.
9. the preparation technology of flexible thin-film solar cell according to claim 8, is characterized in that: when step (3) or step (5) prepare transparent conductive film, and as preparation ITO, institute's using method is thermal evaporation, electron beam evaporation or sputtering; As prepared BZO, the method used is LPCVD; As prepared AZO, the method used is sputtering.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107104168A (en) * | 2017-04-20 | 2017-08-29 | 上海幂方电子科技有限公司 | UV sensor and preparation method thereof |
| EP3579283A1 (en) * | 2018-06-08 | 2019-12-11 | Hanergy New Material Technology Co., Ltd. | Solar cell and manufacturing method therefor |
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| CN101752454A (en) * | 2008-12-04 | 2010-06-23 | 上海空间电源研究所 | Preparation method of ultrathin Cu-In-Ga-Se thin film solar cell with light trap structure |
| CN102201460A (en) * | 2011-05-09 | 2011-09-28 | 马鞍山优异光伏有限公司 | Novel crystalline silicon solar battery and manufacture method thereof |
| CN202888192U (en) * | 2012-11-09 | 2013-04-17 | 苏州阿特斯阳光电力科技有限公司 | Solar battery assembly |
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| US4361950A (en) * | 1980-03-24 | 1982-12-07 | Exxon Research & Engineering Co. | Method of making solar cell with wrap-around electrode |
| CN101752454A (en) * | 2008-12-04 | 2010-06-23 | 上海空间电源研究所 | Preparation method of ultrathin Cu-In-Ga-Se thin film solar cell with light trap structure |
| CN102201460A (en) * | 2011-05-09 | 2011-09-28 | 马鞍山优异光伏有限公司 | Novel crystalline silicon solar battery and manufacture method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107104168A (en) * | 2017-04-20 | 2017-08-29 | 上海幂方电子科技有限公司 | UV sensor and preparation method thereof |
| EP3579283A1 (en) * | 2018-06-08 | 2019-12-11 | Hanergy New Material Technology Co., Ltd. | Solar cell and manufacturing method therefor |
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Application publication date: 20150617 |