CN104708885B - The manufacturing method of glass laminate and the manufacturing method of electronic device - Google Patents

The manufacturing method of glass laminate and the manufacturing method of electronic device Download PDF

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Publication number
CN104708885B
CN104708885B CN201410790744.8A CN201410790744A CN104708885B CN 104708885 B CN104708885 B CN 104708885B CN 201410790744 A CN201410790744 A CN 201410790744A CN 104708885 B CN104708885 B CN 104708885B
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glass
supporting substrate
substrate
layer
glass laminate
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CN104708885A (en
Inventor
日野有
日野有一
大坪豊
永野琢也
宇津木洋
宫越达三
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AGC Inc
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Asahi Glass Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/0008—Electrical discharge treatment, e.g. corona, plasma treatment; wave energy or particle radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Fluid Mechanics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Thermal Sciences (AREA)
  • Laminated Bodies (AREA)
  • Electroluminescent Light Sources (AREA)
  • Joining Of Glass To Other Materials (AREA)

Abstract

The present invention relates to the manufacturing method of the manufacturing method of glass laminate and electronics laminated body, the glass laminate has supporting substrate, silicone resin layer and glass substrate successively, and this method includes：Heating process, the supporting substrate with curability layer that will be provided with the curable silicone composition layer of supporting substrate and configuration on aforementioned first interarea of aforementioned supporting substrate with the first interarea and the second interarea is supported from aforementioned second main surface side of aforementioned supporting substrate with multiple supporting pins, heat treatment is implemented to the supporting substrate of aforementioned strip curability layer, forms silicone resin layer；Lamination process, after aforementioned heating process, the laminated glass substrate on aforementioned organic silicon resin layer；Surface treatment procedure, after aforementioned lamination process or after aforementioned heating process and before aforementioned lamination process, at least one kind of processing in the group being made of sided corona treatment, corona treatment and UV ozone treatments at least is implemented to aforementioned second interarea of aforementioned supporting substrate.

Description

The manufacturing method of glass laminate and the manufacturing method of electronic device
Technical field
The present invention relates to the manufacturing methods of the manufacturing method of glass laminate and electronic device.
Background technology
In recent years, the devices (electronic equipment) such as solar cell (PV), liquid crystal display panel (LCD), organic EL panel (OLED) It is being thinned, lightweight, the glass substrate used in these devices is carrying out thin plate.If since thin plate causes The intensity of glass substrate is insufficient, then in the manufacturing process of device, the treatability of glass substrate can reduce.
Recently, in order to cope with the above problem, it is proposed that following methods：Preparation is laminated with glass substrate and the glass of reinforcing plate Laminated body after forming the electronic devices components such as display device on the glass substrate of glass laminate, is detached from glass substrate Reinforcing plate (for example, see patent document 1).The organic siliconresin that reinforcing plate has supporting substrate and is fixed on the supporting substrate Layer, silicone resin layer are closely sealed in a releasable manner with glass substrate.Silicone resin layer of the reinforcing plate in glass laminate It is stripped with the interface of glass substrate, the reinforcing plate detached from glass substrate can be laminated with new glass substrate, as glass Glass laminated body is recycled.
In addition, for being formed by glass laminate, sometimes in order to which the surface to glass substrate is ground and is implemented Milled processed (patent document 2).
Existing technical literature
Patent document
Patent document 1：International Publication No. 2007/018028
Patent document 2：Japanese Unexamined Patent Publication 2013-149713
Invention content
Problems to be solved by the invention
On the other hand, it is hitherto known have its surface configuration is had into the top that the supporting substrate of film is placed in multiple supporting pins The method being thermally dried.
The inventors of the present invention have surface configuration by adding when making reinforcing plate according to the method described in patent document 1 Supporting substrate that is hot and forming the film of silicone resin layer, which is placed at the top of multiple supporting pins, to be thermally dried, and is formed with After machine silicone layer, laminated glass substrate makes glass laminate on silicone resin layer.Then, make gained glassy layer Glass laminate is placed on defined substrate, towards defined substrate-side such as patent document by the supporting substrate side in stack 1, the formation of the electronic device component on the glass substrate in glass laminate has been carried out described in 2, to glass substrate The milled processed on surface.Then, it is desirable to when removing glass laminate from defined substrate, it is specified that substrate and supporting substrate it is close It closes, glass laminated cognition is fixed on defined substrate, fails easily to remove.Therefore, it has occurred because the process time is long-term Productivity reduces caused by change, the fabrication yield of electronic device reduces.
The present invention makes in view of the above subject, and its purpose is to provide the manufacturing method of glass laminate, the party Method can be manufactured can easily shell from the substrate after so that supporting substrate side is placed on various substrates towards various substrates From glass laminate.
In addition, the present invention also aims to provide the manufacturing method for the electronic device for using glass laminate, the glass Glass laminated body is manufactured by the manufacturing method of the glass laminate.
The solution to the problem
The inventors of the present invention have made intensive studies to solve the above-mentioned problems, so as to complete the present invention.
That is, the 1st invention of the present invention is a kind of manufacturing method of glass laminate, the glass laminate has branch successively Support group plate, silicone resin layer and glass substrate, this method include following processes：Heating process, wherein will be provided with having first Curable silicone composition layer of the supporting substrate and configuration of interarea and the second interarea on the first interarea of supporting substrate The supporting substrate with curability layer be supported from the second main surface side of supporting substrate with multiple supporting pins, to band curability layer Supporting substrate implement heat treatment, formed silicone resin layer；Lamination process, wherein after aforementioned heating process, organic Laminated glass substrate on silicone layer；Surface treatment procedure, wherein after lamination process or after heating process and be laminated Before process, at least the second interarea of supporting substrate is implemented selected from by sided corona treatment, corona treatment and UV ozone treatment groups At group at least one kind of processing.
In the 1st invention, it is preferred that curable silicone composition layer at least contains organic alkene with alkenyl Based polysiloxane and organic hydrogen polysiloxanes with the hydrogen atom with silicon atom bonding.
In the 1st invention, it is preferred that heating process has the 1st heating for implementing heat treatment at a temperature of the 1st successively Process and higher than the 1st temperature the 2nd at a temperature of implement heat treatment the 2nd heating process.
In the 1st invention, it is preferred that the supporting substrate with curability layer will be by that will contain curable silicone and solvent Curable silicone composition be coated on the first interarea of supporting substrate and formed,
1st temperature meets+30 DEG C of the initial boiling point of -30 DEG C of initial boiling point≤1 temperature≤solvent of solvent.
In the 1st invention, it is preferred that after lamination process, implement surface treatment procedure.
In the 1st invention, it is preferred that more along the conveying direction arrangement of glass laminate in surface treatment procedure A electrode pair, the electrode are opposite across the transport path for conveying the glass laminate obtained in the lamination process to having High-field electrode and grounding electrode, a high-field electrode of adjacent electrode centering is configured at across the side of transport path, Another high-field electrode is configured at across the other side of transport path, on one side along transport path convey glass laminate, one While applying high frequency voltage to high-field electrode, sided corona treatment is implemented to glass laminate.
The 2nd invention of the present invention is a kind of manufacturing method of electronic device, and this method includes following processes：Component forms work Sequence, wherein form electronics on the surface of the glass substrate for the glass laminate that the manufacturing method by above-mentioned 1st invention manufactures Device component obtains the laminated body of having electronic device component；Separation process, wherein from the layer of having electronic device component The supporting substrate of tape tree lipid layer of the stack removal with silicone resin layer and supporting substrate, obtains with glass substrate and electronics The electronic device of device component.
The effect of invention
In accordance with the invention it is possible to provide the manufacturing method of glass laminate, this method, which can manufacture, makes supporting substrate side It can be easily from the glass laminate of the strippable substrate after being placed in towards various substrates on various substrates.
In addition, in accordance with the present invention it is further possible to provide the manufacturing method of the electronic device using glass laminate, the glass Laminated body is manufactured by the manufacturing method of the glass laminate.
Description of the drawings
Fig. 1 is the flow chart of the manufacturing process of the 1st invention of the manufacturing method for showing the glass laminate of the present invention.
(A), (B) and (C) of Fig. 2 is the 1st reality of the manufacturing method that the glass laminate of the present invention is shown by process sequence Apply the schematic cross-section of mode.
Fig. 3 is the schematic diagram for the configuration status for showing the supporting substrate with curability layer in heating process.
Fig. 4 is the side view for an embodiment for showing corona treatment plant.
Fig. 5 is the flow chart of the manufacturing process of the 2nd invention of the manufacturing method for showing the glass laminate of the present invention.
(A) and (B) of Fig. 6 is an embodiment of the manufacturing method that the electronic device of the present invention is shown by process sequence Schematic cross-section.
Reference sign
10 supporting substrates
Second interarea of 10a supporting substrates
12 curable silicone composition layers
14 supporting substrates with curability layer
16 silicone resin layers
The surface with supporting substrate side opposite side of 16a silicone resin layers
The supporting substrate of 18 tape tree lipid layer
20 glass substrates
First interarea of 20a glass substrates
Second interarea of 20b glass substrates
22 electronic device components
The laminated body of 24 having electronic device components
26 electronic devices
50 supporting tables
52 supporting pins
60 corona treatment plants
62 the 1st high-field electrodes
64 the 1st grounding electrodes
66 the 2nd high-field electrodes
68 the 2nd grounding electrodes
70 the 1st electrodes pair
72 the 2nd electrodes pair
74 conveying rollers
76 the 1st high frequency electric sources
78 the 2nd high frequency electric sources
100 glass laminates
X glass laminates
Specific implementation mode
The preferred embodiment of the present invention is illustrated referring to the drawings, but the present invention is by following embodiment party The limitation of formula can impose various modifications and displacement to following implementation without departing from the scope of the invention.
The inventors of the present invention are studied regarding to the issue above, as a result, it has been found that one of reason is after heating process or glass Organic siliconresin is attached to the second interarea (back side) side of supporting substrate (after lamination process) after laminated body making.
More specifically, in heating process, organic siliconresin or its feedstock portions volatilization, organic siliconresin be attached to by Second main surface side of the supporting substrate that supporting pin is supported.Therefore, in the supporting substrate side for making glass laminate as defined in When being positioned in glass laminate on defined substrate to substrate-side, due to the branch in the defined substrate and glass laminate Existing organic siliconresin causes the peel strength of defined substrate and supporting substrate to rise between support group plate, and the two becomes difficult to Stripping.Thus found that being removed by implementing various processing to the second main surface side of supporting substrate after glass laminate makes Organic siliconresin can solve the above problems.
The manufacturing method of the glass laminate of the present invention has implements heat treatment to the supporting substrate with curability layer Heating process, the lamination process of laminated glass substrate and the surface treatment procedure that is surface-treated.In addition, surface treatment work Sequence is implemented after above-mentioned lamination process or after above-mentioned heating process and before above-mentioned lamination process.Below using the former mode as 1st mode is illustrated the mode of the latter as the 2nd mode.
<<1st mode>>
Fig. 1 is the flow chart of the manufacturing process in the 1st invention of the manufacturing method for showing the glass laminate of the present invention.Such as Shown in Fig. 1, the 1st invention has heating process S102, lamination process S104 and surface treatment procedure S106 successively.
The material and its step that are used in each process are described in detail below.First, heating process S102 is carried out It is described in detail.
<Heating process>
Heating process S102 is following process：It will be provided with the supporting substrate with the first interarea and the second interarea and match The supporting substrate with curability layer of the curable silicone composition layer on the first interarea of supporting substrate is set from branch support group The second interarea (with there are the faces of curable silicone composition layer side opposite side) side of plate is supported with multiple supporting pins, Heat treatment is implemented to the supporting substrate with curability layer, forms silicone resin layer.More specifically, pass through (A) to Fig. 2 In the supporting substrate 14 with curability layer for having supporting substrate 10 and curable silicone composition layer 12 implement the process S102 can obtain the supporting substrate 18 for having the tape tree lipid layer of supporting substrate 10 and silicone resin layer 16 as shown in Fig. 2 (B).
The component used in this process S102, material (supporting substrate, curable silicone combination is described in detail first below Nitride layer), then the step of process S102, is described in detail.
(supporting substrate)
Supporting substrate 10 has the first interarea and the second interarea this 2 interareas, common with aftermentioned silicone resin layer 16 Effect, supports and enhances aftermentioned glass substrate 20, and in aftermentioned component formation process (the manufacture work of electronic device component Sequence) in manufacture electronic device component when prevent the deformation of glass substrate 20, scratch, breakage etc..In addition, using supporting substrate 10 The first purpose also resides in, identical as previous thickness of glass substrate by being made when using thickness than in the past thin glass substrate Glass laminate, in component formation process, it is possible to use be suitable for the glass substrate of previous thickness manufacturing technology, manufacture Equipment.
As supporting substrate 10, metallic plate, ceramic wafer etc. such as glass plate, plastic plate, SUS plates can be used.In structure When part formation process is with heat treatment, supporting substrate 10 preferably by and glass substrate 20 linear expansion coefficient the small material shape of difference At more preferably being formed by material identical with glass substrate 20.That is, supporting substrate 10 is preferably glass plate.Supporting substrate 10 is special The glass plate that You Xuanwei not be formed by glass material identical with glass substrate 20.
The thickness of supporting substrate 10 can be thicker than glass substrate 20, can also be thinner than its.Preferably, according to glass substrate The thickness of 20 thickness, the thickness of resin layer 16 and glass laminate selects the thickness of supporting substrate 10.For example, current Component formation process is designed in such a way that the substrate to thickness 0.5mm is handled, the thickness and resin of glass substrate 20 When the sum of thickness of layer 16 is 0.1mm, the thickness of supporting substrate 10 is set as 0.4mm.The thickness of supporting substrate 10 is usual In the case of preferably 0.2~5.0mm.
When supporting substrate 10 is glass plate, from the reasons such as easy to operate, not easily broken, the thickness of glass plate is preferably 0.08mm or more.In addition, for electronic device with component formed after remove when it can be expected that with appropriateness flexure without broken The reason of such rigidity is split, the thickness of glass plate is preferably 1.0mm or less.
Supporting substrate 10 and average linear expansion coefficient (hereinafter referred to as " average line of the glass substrate 20 at 25~300 DEG C The coefficient of expansion ") difference be preferably 500 × 10-7/ DEG C hereinafter, more preferably 300 × 10-7/ DEG C hereinafter, further preferably 200 ×10-7/ DEG C or less.When difference is excessive, when the heating in component formation process cools down, it is possible to which glass laminate is acutely stuck up Bent or glass substrate 20 and the supporting substrate 18 of aftermentioned tape tree lipid layer are peeling-off.The material of glass substrate 20 and branch support group When the material identical of plate 10, the generation of this problem can be inhibited.
(curable silicone composition layer)
Curable silicone composition layer is the layer for the composition that silicone resin layer can be formed in this process S102.
Contain the curable silicone for being solidified to form organic siliconresin in curable silicone composition layer.This solidification Property organosilicon can be divided into condensation reaction type organosilicon, addition reaction-type organosilicon, ultraviolet hardening according to its curing mechanism to be had Machine silicon and electron beam curing type organosilicon, these can be used.Preferred addition reaction-type organosilicon in them.This be by The degree of release performance when curing reaction is easy to carry out, forms silicone resin layer is good, heat resistance is also high.
Addition reaction-type organosilicon be containing host agent and crosslinking agent, it is cured in the presence of the catalyst such as platinum group catalyst The composition of curability.The solidification of addition reaction-type organosilicon can be promoted because of heat treatment.In addition reaction-type organosilicon Host agent be preferably with organopolysiloxane (i.e. organic poly- silicon of alkenyl with the alkenyl (vinyl etc.) of silicon atom bonding Oxygen alkane.Wherein preferred straight chain), alkenyl etc. becomes crosslinking points.Crosslinking agent in addition reaction-type organosilicon preferably have with Organopolysiloxane (the i.e. organic hydrogen polysiloxanes of the hydrogen atom (hydrosilyl) of silicon atom bonding.It is wherein preferably straight Chain), hydrosilyl etc. becomes crosslinking points.
Addition reaction-type organosilicon carries out addition reaction by the crosslinking points of host agent and crosslinking agent by cures.In addition, from by From the point of view of the superior aspect of heat resistance that cross-linked structure is brought, the preferred hydrogen atom with silicon atom bonding of organic hydrogen polysiloxanes The molar ratio of alkenyl relative to organic alkenyl polysiloxanes is 0.5~2.
When the curable silicone contained in curable silicone composition layer is addition reaction-type organosilicon, curability has Catalyst (especially platinum group metal catalyst), reaction suppressor can also be contained in machine silicon composition layer.
Platinum group metal catalyst (hydrosilylation platinum metal catalysts) is for keeping above-mentioned organic alkenyl poly- The hydrosilylation reactions of alkenyl in siloxanes and the hydrogen atom in above-mentioned organic hydrogen polysiloxanes carry out, are promoted Catalyst.As platinum group metal catalyst, the catalyst of platinum group, palladium system, rhodium system etc. can be enumerated, from economy, reactivity From the point of view of aspect, platinum group catalyst is particularly preferably used.
Reaction suppressor (hydrosilylation reaction suppressor) is that (especially platinum group metal system urges the above-mentioned catalyst of inhibition Agent) catalyst activity at normal temperatures, the pot life for extending curable silicone composition so-called working life extend Agent (also referred to as delayed-action activator).As reaction suppressor, such as various organonitrogen compounds, organic phosphorus compound, second can be enumerated Acetylene compound, oxime compound, organochlorine compound etc..In particular, being suitably acetylene compound (such as acetylene alcohols and acetylene The silane compound of alcohol).
The method for forming curable silicone composition on supporting substrate is not particularly limited, may be used well known Method.Such as it can enumerate and the curable silicone composition containing above-mentioned curable silicone is coated on supporting substrate Method.In addition, the method being coated is not particularly limited, well known method may be used.For example, as coating method, It can enumerate：Spray coating method, die coating method, spin-coating method, dip coating, rolling method, stick coating method, silk screen print method, gravure coating process etc..It can Suitably to be selected from such method according to the type of curable silicone composition.
It can contain solvent as needed in curable silicone composition.Solvent is preferably capable easily dissolving each Kind ingredient and the solvent for the removal that can easily volatilize.Specifically, can for example exemplify butyl acetate, heptane, 2-HEPTANONE, 1- Methoxy-2-propanol acetic acid esters, toluene, dimethylbenzene, THF, chloroform etc..Wherein, preferred saturated hydrocarbons can be used substantially by various The various saturated hydrocarbons of one kind or two or more formation in saturated hydrocarbons (straight chain saturation alkane, branched-chain saturated hydrocarbon, ester ring type saturated hydrocarbons) are molten Agent.Such as it can enumerate：Isopar G (Exxon Mobil Corporation manufactures), Isopar L (Exxon Mobil Corporation is manufactured), Isopar H (Exxon Mobil Corporation manufacture), Isopar M (Exxon Mobil Corporation is manufactured), Norpar 13 (Exxon Mobil Corporation manufacture), Norpar15 (Exxon Mobil Corporation is manufactured), Exxsol D40 (Exxon Mobil Corporation manufacture), Exxsol D60 (Exxon Mobil Corporation manufacture), Exxsol D80 (Exxon Mobil Corporation manufactures), Neochiozol (in Centre chemical conversion Co., Ltd. manufacture), IP Solvent 2028 (Idemitsu Kosen Co., Ltd.'s manufacture).
Wherein, as described later, from 2 stages implement process S102 when in the 1st heating period the readily volatilized side of solvent , it is preferable to use initial boiling point (under atmospheric pressure) is 210 DEG C of solvents below from the point of view of face.
In addition, the thickness of curable silicone composition layer is not particularly limited, after can suitably adjusting to be had The silicone resin layer for the suitable depth stated.
(the step of process)
In this process S102, by the supporting substrate with curability layer from the multiple supports of the second main surface side of supporting substrate Pin is supported, and implements heat treatment.That is, the supporting substrate with curability layer is supported with supporting pin on one side, on one side into Row heating.More specifically, as shown in figure 3, in supporting table 50 on the front end (top) of multiple supporting pins 52 of separate configuration The supporting substrate 14 with curability layer is configured, heat treatment is implemented to the supporting substrate 14 with curability layer in this state.Separately Outside, the second interarea 10a of the supporting substrate 10 in the supporting substrate 14 of supporting part curability layer as illustrated in fig. 3 of supporting pin 52.
Although only showing 3 supporting pins 52 in figure 3, its quantity is not particularly limited, or 10 or more. In addition, the allocation position of supporting pin 52 is not particularly limited, can be configured across defined interval, it can also be irregularly Configuration.In turn, the shape of supporting pin 52 is not particularly limited, can is any shape in cylindric, multilateral shape etc..
In addition, as shown in figure 3, since supporting pin 52 is contacted with a part for the second sides interarea 10a of supporting substrate 10, because There is the region not contacted with supporting pin 52 in the second sides interarea 10a of supporting substrate 10 in this.
About the method for implementing heat treatment to the supporting substrate with curability layer, as long as can be with above-mentioned supporting pin branch Support is heated in the state of the supporting substrate with curability layer and is just not particularly limited, and be can be used for example and is set in heating interior It is equipped with heat treatment apparatus well known to baking oven of supporting pin etc..More specifically, it can enumerate using the heating for having heating plate Processing unit method (such as in the supporting substrate with curability layer on being configured at supporting pin curable silicone combination The method that the top of nitride layer is heated in being provided in the heat treatment apparatus of heating plate).
Make the heating condition of curable silicone composition layer heat cure according to the type of used curable silicone Suitably select optimum condition.Wherein, from the curing rate of curable silicone and being formed by the heat-resisting of silicone resin layer Property etc. from the point of view of, it (is preferably 30~60 that 10~120 minutes are preferably carried out under 150~300 DEG C (preferably 180~250 DEG C) Minute) heat treatment.
As the suitable way of this process S102, implement heat treatment preferably under different temperature conditions with 2 stages Mode.That is, more preferably have the process for implementing heat treatment at a temperature of the 1st and higher than the 1st temperature the 2nd at a temperature of it is real Apply the process of heat treatment.By implementing to heat with 2 stages, the surface planar for being formed by silicone resin layer 16 is more excellent It is different, it is further increased with the adaptation of aftermentioned glass substrate 20.In addition, when implementing to heat with 2 stages, can use respective Heat treatment apparatus implement the 1st heating process and the 2nd heating process.
In addition, the supporting substrate with curability layer is by by the curable silicone group containing curable silicone and solvent It closes object to be coated on supporting substrate and when being formed, better from the removal of solvent, curable silicone composition layer surface From the point of view of becoming flat and can further suppressing the aspect of curable silicone decomposition, the 1st temperature is preferably the initial boiling point-of solvent In the range of+30 DEG C of the initial boiling point of 30 DEG C~solvent.In other words, the 1st temperature preferably satisfies following relationship.
+ 30 DEG C of the initial boiling point of -30 DEG C of initial boiling point≤1 temperature≤solvent of solvent
Wherein, the initial boiling point of solvent refers to the value measured according to JIS K0066 (1992).JIS K0066's (1992) is interior Hold as reference and is incorporated to herein.
Above-mentioned 1st temperature is not particularly limited with the 2nd temperature difference, preferably 10 DEG C or more, more preferably 30 DEG C with On.The upper limit is not particularly limited, it is often preferred that 100 DEG C hereinafter, more preferably 70 DEG C or less.
In addition, the 1st temperature is preferably 210 DEG C or less.Add that is, being preferably provided with and implementing the 1st of heat treatment at 210 DEG C or less Thermal process and the 2nd heating process for implementing heat treatment at more than 210 DEG C.If it is 210 DEG C hereinafter, then can further press down The volatilization of the bumping, organic siliconresin of solvent processed so that the surface planar for being formed by silicone resin layer 16 is better.Below To under above-mentioned temperature condition above-mentioned 1st heating process and above-mentioned 2nd heating process be described in detail.
1st heating process is so-called prebake process, and main removal remains in curable silicone composition layer 12 The volatile ingredients such as solvent and prevent solvent from bumping occurs in aftermentioned 2nd heating process.The temperature condition of 1st heating process Preferably 210 DEG C hereinafter, from the point of view of in terms of the surface planar of silicone resin layer 16 is superior, more preferably 150~210 ℃.Heating time suitably can select optimum condition according to used material, in terms of productivity and the removal of solvent From the point of view of, preferably 1~5 minute, more preferably 2~3 minutes.
2nd heating process is so-called rear baking process, mainly promotes the solidification of curable silicone composition layer 12, shape At silicone resin layer 16.The temperature condition of 2nd heating process is preferably greater than 210 DEG C, from curable silicone composition layer 12 Solvent removal and the superior aspect of curing reaction from the point of view of, more preferably above 210 DEG C and be 250 DEG C or less.Heating time can Optimum condition suitably is selected according to used material, in terms of productivity and the removal of solvent, preferably 10 ~120 minutes, more preferably 30~60 minutes.
It is organic by implementing curability on supporting substrate 10 it to be formed by silicone resin layer 16 by this process S102 The curing reaction of silicon composition layer 12 and be fixed on the single side of supporting substrate 10, and in a releasable manner with aftermentioned glass Glass substrate 20 is closely sealed.Silicone resin layer 16 prevent glass substrate 20 position deviate until into be about to glass substrate 20 with support It until the operation that substrate 10 detaches, and is easily removed from glass substrate 20 by lock out operation, prevents glass substrate 20 Deng breakage due to lock out operation.In addition, silicone resin layer 16 is fixed on supporting substrate 10, the organic siliconresin in lock out operation Layer 16 is not removed with supporting substrate 10, and the supporting substrate 18 of tape tree lipid layer can be obtained by lock out operation.
The surface of silicone resin layer 16 contacted with glass substrate 20 in a releasable manner with glass substrate 20 One interarea is closely sealed.In the present invention, the property that can be easily peeled off on 16 surface of silicone resin layer is known as release performance (fissility).
In the present invention, above-mentioned fixation with it is strippable it is closely sealed in peel strength (removing required stress) exist it is poor Different, fixation refers to that peel strength is larger compared with closely sealed.In addition, it is strippable it is closely sealed refer to peelable, while also meaning can It is removed in a manner of the stripping fixed face does not occur.Specifically, in the glass laminate of the present invention, into being about to glass Refer to not removed in closely sealed face stripping, in fixed face when the operation that glass substrate 20 is detached with supporting substrate 10.Therefore, exist In glass laminate, into when being about to operation that glass substrate 20 is detached with supporting substrate 10, glass laminate is separated into glass base Both plate 20 and the supporting substrate of tape tree lipid layer 18.
That is, silicone resin layer 16 to the binding force of the first interarea of supporting substrate 10 with silicone resin layer 16 to glass It is higher that the binding force of first interarea of substrate 20, which is compared,.
The thickness of silicone resin layer 16 is not particularly limited, preferably 2~100 μm, more preferably 3~50 μm, into One step is preferably 7~20 μm.When the thickness of silicone resin layer 16 is this range, even if in silicone resin layer 16 and glass Bubble, foreign matter are accompanied between substrate 20, can also inhibit the generation of the deformation defect of glass substrate 20.In addition, organic siliconresin When the thickness of layer 16 is blocked up, formation needs to expend time and materials, therefore uneconomical, and heat resistance can reduce sometimes.In addition, having When the thickness of machine silicone layer 16 is excessively thin, silicone resin layer 16 and the adaptation of glass substrate 20 can reduce sometimes.
<Lamination process>
Lamination process S104 is following process：On the surface of the silicone resin layer 16 obtained in above-mentioned operation S102 Laminated glass substrate 20 is had the glass laminate of supporting substrate 10, silicone resin layer 16 and glass substrate 20 successively 100.More specifically, as shown in (C) of Fig. 2, with the surface with 10 side opposite side of supporting substrate of silicone resin layer 16 First interarea 20a of 16a and glass substrate 20 with the first interarea 20a and the second interarea 20b, will be organic as lamination surface Silicone layer 16 and glass substrate 20 are laminated, and obtain glass laminate 100.In addition, as described later, gained glass laminate 100 It is the processing front glass laminated body implemented before aftermentioned surface treatment procedure S106, thus it is speculated that in the branch support group of glass laminate 100 Plate 10 is attached to organosilicon tree with the surface (the second interarea 10a of supporting substrate 10) of 16 side opposite side of silicone resin layer Fat or its raw material.
For used glass substrate 20, it is described in detail later.
The method that glass substrate 20 is layered on silicone resin layer 16 is not particularly limited, may be used well known Method.
Such as the method for being overlapped glass substrate 20 on the surface of silicone resin layer 16 under atmospheric pressure environment can be enumerated. After being overlapped glass substrate 20 as needed and on the surface of silicone resin layer 16, incited somebody to action using roller, compacting Glass substrate 20 is crimped with silicone resin layer 16.By the crimping based on roller or compacting, it can relatively easily remove and be mixed into Bubble between machine silicone layer 16 and glass substrate 20, therefore it is preferred that.
When crimping silicone resin layer 16 with glass substrate 20 by vacuum layer platen press, vacuum pressing, gas can inhibit Bubble be mixed into, ensure it is good closely sealed, therefore more preferably.By being crimped under vacuum, also have the following advantages that, that is, even if In the case where remaining micro-bubble, air bubble growth will not be led to because of heating, it is not easy to cause the change of glass substrate 20 Shape defect.
In laminated glass substrate 20, the table of the glass substrate 20 contacted with silicone resin layer 16 is preferably fully cleaned Face is laminated under the high environment of cleanliness factor.Cleanliness factor is higher, and the flatness of glass substrate 20 is the better, therefore it is preferred that.
In addition, after laminated glass substrate 20, pre-anneal treatment (heat treatment) can be carried out as needed.By into The row pre-anneal treatment, the glass substrate 20 being laminated improve the adaptation of silicone resin layer 16, and it is suitable to become Peel strength is less likely to occur position deviation of electronic device component etc., electronic device in aftermentioned component formation process Productivity improve.
The condition of pre-anneal treatment suitably can select optimum condition according to the type of used silicone resin layer 16, From make the peel strength between glass substrate 20 and silicone resin layer 16 more suitably in terms of, preferably at 300 DEG C or more (preferably 5~30 minutes) heat treatment in 5 minutes or more is carried out at a temperature of (preferably 300~400 DEG C).
(glass substrate)
First interarea 20a of glass substrate 20 is contacted with silicone resin layer 16, opposite with 16 side of silicone resin layer Electronic device component is set on the second interarea 20b of side.
The type of glass substrate 20 can be glass that is conventional, such as can enumerating display device as LCD, OLED Glass substrate etc..The chemical resistance of glass substrate 20, resistance to excellent moisture permeability, and percent thermal shrinkage is low.As percent thermal shrinkage Linear expansion coefficient specified in JIS R 3102 (nineteen ninety-five modification) can be used in index.JIS R's 3102 (nineteen ninety-five modification) Content is incorporated by reference herein.
When the linear expansion coefficient of glass substrate 20 is big, since aftermentioned component formation process is mostly with heat treatment, Easy to produce various rough sledding.For example, when forming thin film transistor (TFT) (TFT) on glass substrate 20, if will under heating The glass substrate 20 for foring TFT cools down, then exist makes the position offset of TFT become due to the thermal contraction of glass substrate 20 Big anxiety.
Glass substrate 20 can be obtained by being melted glass raw material and melten glass is shaped to plate.This molding Method can be conventional, such as float glass process, fusion method can be used, draw method (slot down draw process), not under discharge orifice Gram method (fourcault process), Lu Baifa (Lubbers process) etc..In addition, especially for the thin glass of thickness Substrate 20, using by the glass for being temporarily shaped to plate be heated to plastic temperature and by stretch etc. means extend And thinning method (horizontal sheet process) molding obtains.
The type of the glass of glass substrate 20 is not particularly limited, preferably alkali-free pyrex, pyrex, sodium Lime glass, vagcor, other are with silica oxide system glass as main component.As oxide system glass, preferably The glass that the content of silica based on oxide conversion is 40~90 mass %.
As the glass of glass substrate 20, the type of suitable electronic device component, the glass of its manufacturing process can be used. For example, the glass substrate of liquid crystal display panel has an impact liquid crystal since the dissolution of alkali metal component is easy, by substantial The glass (alkali-free glass) of alkali metal-containing component does not form (wherein, usually containing alkaline earth metal component).In this way, glass substrate 20 Glass can suitably be selected according to the type and its manufacturing process for the device applied.
From the perspective of the slimming and/or lightweight of glass substrate 20, the thickness of glass substrate 20 is preferably 0.3mm Hereinafter, more preferably 0.15mm is hereinafter, further preferably 0.10mm or less.When thickness is 0.3mm or less, glass can be assigned 20 good flexibility of substrate.When thickness is 0.15mm or less, glass substrate 20 can be coiled into scroll-like.
In addition, the reasons such as the manufacture for glass substrate 20 is easy, the processing of glass substrate 20 is easy, glass substrate 20 Thickness is preferably 0.03mm or more.
In addition, glass substrate 20 can be formed above by 2 layers, in this case, the material for forming each layer can be of the same race Material can also be not same material.In addition, in this case, " thickness of glass substrate 20 " refers to all layers of overall thickness.
(glass laminate)
Glass laminate 100 is that have supporting substrate 10, glass substrate 20 and the organic siliconresin being present between them The laminated body of layer 16.The face of the side of silicone resin layer 16 is contacted with the first interarea of supporting substrate 10, and the other side Face is contacted with the first interarea 20a of glass substrate 20.
The glass laminate 100 uses until aftermentioned component formation process.That is, the glass laminate 100 uses Until the electronic devices components such as liquid crystal display device being formed on the second interarea 20b of its glass substrate 20.Then, it is formed with The glass laminate of electronic device component is separated into the supporting substrate 18 and electronic device of tape tree lipid layer, the branch of tape tree lipid layer Support group plate 18 will not become the composition part of electronic device.New glass base can be laminated on the supporting substrate 18 of tape tree lipid layer Plate 20 is recycled as new glass laminate 100.
Supporting substrate 10 and the interface of silicone resin layer 16 have peel strength (x), to supporting substrate 10 and organosilicon When the interface of resin layer 16 applies the stress more than the peeling direction of peel strength (x), in supporting substrate 10 and organic siliconresin The interface of layer 16 is peeling-off.Silicone resin layer 16 and the interface of glass substrate 20 have peel strength (y), to organosilicon tree When the interface of lipid layer 16 and glass substrate 20 applies the stress more than the peeling direction of peel strength (y), in silicone resin layer 16 is peeling-off with the interface of glass substrate 20.
As described above, in glass laminate 100 (laminated body for also referring to aftermentioned having electronic device component), above-mentioned stripping It is more than (being higher than) above-mentioned peel strength (y) from intensity (x).Therefore, glass laminate 100 is applied supporting substrate 10 and glass Substrate 20 remove direction stress when, glass laminate 100 silicone resin layer 16 and glass substrate 20 interface peel, It is separated into glass substrate 20 and the supporting substrate 18 of tape tree lipid layer.
That is, silicone resin layer 16 is fixed on the supporting substrate 18 for forming tape tree lipid layer on supporting substrate 10, glass substrate 20 is closely sealed on silicone resin layer 16 in a releasable manner.
Peel strength (x) is preferably sufficiently above peel strength (y).It refers to improving organic siliconresin to improve peel strength (x) The adhesive force of 16 pairs of supporting substrate 10 of layer, and it is able to maintain that the phase compared with to the adhesive force of glass substrate 20 after a heating treatment To higher adhesive force.
Silicone resin layer 16 is to the raising of the adhesive force of supporting substrate 10 as described above, by making curable silicone group Conjunction nitride layer 12 is crosslinked on supporting substrate 10 to be formed by curing silicone resin layer 16 and realizes.Pass through bonding when crosslinking curing Power can form the silicone resin layer 16 combined with supporting substrate 10 with high-bond.
On the other hand, curable silicone composition layer 12 is usually less than the binding force of the glass substrate 20 of solidfied material State the binding force generated when crosslinking curing.
Glass laminate 100 can be used in various uses, for example, can enumerate the aftermentioned display device panel of manufacture, PV, thin-film secondary battery, surface are formed with the purposes etc. of the electronic units such as the semiconductor crystal wafer of circuit.It should be noted that should It is exposed under (such as 1 hour or more) hot conditions (such as 360 DEG C or more) with glass laminate more than 100 on the way.
Herein, display device panel includes LCD, OLED, Electronic Paper, Plasmia indicating panel, field emission panels, amount Son point LED panel, MEMS (Micro Electro Mechanical Systems, microelectromechanical systems) shutter face plate etc..
<Surface treatment procedure>
Surface treatment procedure S106 be at least to supporting substrate the second interarea (with there are silicone resin layer sides opposite one The face of side) implement the work of at least one kind of processing in the group being made of sided corona treatment, corona treatment and UV ozone treatments Sequence.In the 1st invention, it is intended to implement above-mentioned processing to the second interarea of the supporting substrate in the glass laminate of above-mentioned formation. More specifically, above-mentioned processing is implemented to the second interarea 10a of the supporting substrate 10 of (C) of Fig. 2.By implementing this process S106 volatilizees in above-mentioned heating process S102 and is attached to organic siliconresin, its original of the second interarea 10a of supporting substrate 10 Material ingredient etc. is removed, and the second interarea 10a of supporting substrate 10 is purifying.That is, by being obtained in above-mentioned lamination process S104 The glass laminate arrived implements above-mentioned processing, and processed glass laminate can be obtained.In addition, as described later, in this process It, can be to the exposing table of the glass substrate in the second interarea and glass laminate of the supporting substrate in glass laminate in S106 Implement above-mentioned processing together in face.
As the sided corona treatment (corona cleaning) implemented in this process S106, well known sided corona treatment can be implemented.In addition, electric Dizzy handle refers at the surface that the surface that corona discharge, which irradiates, makes plastic film, paper and metal foil etc. handle base material is modified Reason technology.When applying the high frequency sent out by high intensity light source, high voltage between high-field electrode and grounding electrode, corona is generated Electric discharge.
The method of sided corona treatment is not particularly limited, for example, preferably support glass laminate conveying roller and with its phase So that it is generated corona discharge to high voltage is applied between the electrode of setting, glass laminate is made to move and carry out table therebetween successively The method of surface treatment.As specific sided corona treatment device, can enumerate by high frequency electric source (high-frequency generator), high pressure transformation Device and discharge electrode are constituted, and the device of the conveyer of conveying glass laminate is assembled with before and after it.To the frequency of high-frequency generator Rate is not particularly limited, such as preferably 0.1~100kHz, and preferably at most output power is the high frequency vibrating of 0.5~50kW or so Swing device.The conveying speed (processing speed) of glass laminate is not particularly limited, preferably 1~10m/min.
In addition, it is preferable to use at corona described below when implementing surface treatment procedure S106 after lamination process S104 Manage device.
Fig. 4 is the side view for an embodiment for showing corona treatment plant.Corona treatment plant 60 at least has the 1st High-field electrode 62, the 1st grounding electrode 64, the 2nd high-field electrode 66 and the 2nd grounding electrode 68.1st high-field electrode 62 connects with the 1st Ground electrode 64 configures across specified interval and constitutes the 1st electrode pair 70 in opposite directions, and electricity is grounded in these the 1st high-field electrodes 62 and the 1st Discharge space is formed between pole 64.In addition, the 2nd high-field electrode 66 and the 2nd grounding electrode 68 configured in opposite directions across specified interval and The 2nd electrode pair 72 is constituted, discharge space is formed between these the 2nd high-field electrodes 66 and the 2nd grounding electrode 68.1st electrode pair 70 and the 2nd electrode pair 72 is as shown in figure 4, what is obtained in conveying lamination process S104 has supporting substrate, organosilicon successively The direction of the glass laminate X of resin layer and glass substrate is adjacent to.In turn, as shown in figure 4, glass laminate X is by conveying Roller 74 is conveyed, between the 1st high-field electrode 62 and the 1st grounding electrode 64 and the 2nd high-field electrode 66 and the 2nd grounding electrode 68 Between move.
In addition, the 1st high-field electrode 62 connect with the 1st high frequency electric source 76 and is applied in high frequency voltage.In addition, the 2nd high-voltage electricity Pole 66 connect with the 2nd high frequency electric source 78 and is applied in high frequency voltage.It should be noted that in Fig. 4, having used the 1st high-frequency electrical Both source 76 and the 2nd high frequency electric source 78, but it is not limited to which, the 1st high frequency electric source 76 and the 2nd high frequency electric source 78 can make With (shared) same power supply.
In turn, the 1st high-field electrode 62 and the 2nd high-field electrode 66 are arranged respectively at the glass laminate X conveyings in Fig. 4 Path (transport path) upside (side) and downside (other side).In other words, the 1st high-field electrode 62 and the 2nd high-field electrode 66 is interconnected along the conveying direction of glass laminate X.
When conveying glass laminate X to above-mentioned corona treatment plant 60 using conveying roller 74, due to 62 He of the 1st high-field electrode 2nd high-field electrode 66 is arranged respectively at the side and the other side of the transport path of glass laminate X, therefore can be effectively to institute The two sides of the glass laminate X of conveying carries out sided corona treatment.That is, can be to the second master of the supporting substrate in glass laminate X The exposing surface of face (face with silicone resin layer side opposite side) and glass substrate is (with silicone resin layer side opposite side Face) implement sided corona treatment.
In addition, the optimum range of the condition of the conveying speed (processing speed) of the condition of high frequency electric source, glass laminate X is such as It is upper described.
In addition, in Fig. 4, the 1st high-field electrode 62 configuration upside in the accompanying drawings, the 2nd high-field electrode 66 are configured in attached drawing In downside, but be not limited to which, position relationship can overturn.
In addition, only implementing strong sided corona treatment to the unilateral face (the second interarea of supporting substrate) of glass laminate X When, the 1st high-field electrode 62 and the 2nd high-field electrode 66 can be configured upside or downside in the accompanying drawings together.
In turn, in Fig. 4, the corona treatment plant for including 72 the two of the 1st electrode pair 70 and the 2nd electrode pair is described, But the quantity of electrode pair is not limited to which.
As the 1st high-field electrode 62, the 2nd high-field electrode 66, the 1st grounding electrode 64 and the 2nd grounding electrode 68, gold can be used Belong to electrode or by the coating electrode of dielectric, but in order to stablize the electric discharge carried out for sided corona treatment, the 1st preferably configured in opposite directions At least one and the 2nd high-field electrode 66 configured in opposite directions and the 2nd grounding electrode 68 of high-field electrode 62 and the 1st grounding electrode 64 At least one of it is coating by dielectric.Both more preferable 1st high-field electrode 62 and the 1st grounding electrode 64 and the 2nd high-voltage electricity Both pole 66 and the 2nd grounding electrode 68 are covered by dielectric.Thereby, it is possible to expand the interval between high-field electrode and grounding electrode, It becomes easy and stablizes conveying glass laminate X.
In addition, as by the coating electrode of dielectric (dielectric covering electrodes), preferably in metals such as stainless steel, aluminium etc Electric conductivity core material surface be coated with ceramics ceramic electrode.When generally, to resin film progress sided corona treatment etc., as Dielectric covering electrodes, using the rubber electrode for being coated with rubber material on metal core material, but due to the pass of weight and rigidity System and diameter is thick, therefore the enlargement of corona treatment plant 60, gap is generated between conveying roller, sometimes in thin glass laminate X Conveying in break down.Ceramic electrode is due to light weight and rigidity is high, and diameter is less than rubber electrode, thus does not allow to be also easy to produce This problem.
In addition, rubber electrode is easy, rubber envelope due to electric discharge is impaired, and therefore, it is difficult to fix electrode to use.Therefore, one As rotating mechanism is set on rubber electrode, is used when making it rotate, there is a problem of that device is complicated and enlarged.Ceramic electrical Even if not allowing easy damaged same area is discharged repeatedly, there is no need to this rotating mechanism is arranged for pole.
Corona treatment (plasma clean) includes atmospheric pressure (or normal pressure) corona treatment and low-pressure low-temperature etc. Gas ions processing.
In atmospheric pressure plasma jet treatment, to gas apply discharge energy, ionized under normal pressure, make its generate etc. from Daughter.As its feature, can enumerate：Due to being that vacuum, equipment are simple and productivity is also high without being formed for atmospheric processes.Make For mode, mainly there are rare gas class atmospheric plasma and control to apply the pulse mode normal pressure etc. that voltage carries out glow discharge Gas ions can use any.
In low-pressure low-temperature corona treatment, glass laminate is made to pass through the apparatus for low-temperature plasma treatment that can be depressurized It is interior, make the atmosphere for inorganic gas in device, is the state of 0.001~10Torr, preferably 0.01~1Torr keeping pressure Under apply the electric power of frequency 50Hz~13.6MHz between electrode.Electric power by applying 0.1~50kW produces by carrying out glow discharge The low temperature plasma of raw inorganic gas.Glass laminate is set wherein, supporting substrate is handled.To glass laminate When carrying out continuous processing, so that glass laminate is moved successively on one side, corona treatment is carried out to surface on one side.It is inorganic as this Gas can use the rare gas and oxygen, nitrogen, air, carbonic acid gas, ammonia etc. such as helium, neon, argon gas.These gases It is not limited to a kind, can be mixture of more than two kinds.
Atmospheric pressure plasma jet treatment and low-pressure low-temperature corona treatment it is any in, plasma treatment time is equal Preferably 0.1~1000 second, more preferably 1~100 second.
UV ozone treatments, which refer to irradiation UV (ultraviolet light), makes the oxygen in air be converted to ozone, by the ozone and ultraviolet Line is come the processing that keeps plane of illumination purifying.
UV light sources are not particularly limited as long as it oxygen can be made to be converted to ozone by UV irradiations.As UV light sources, can arrange Enumerate low pressure mercury lamp.Low pressure mercury lamp generates the UV light of 185nm and 254nm, and 185nm lines can make oxygen be converted to ozone.Irradiation When illumination it is different according to the light source used, generally use tens~hundreds of mW/cm2Light source.In addition, by light harvesting, expanding It dissipates, illumination can be changed.Irradiation time is different according to the illumination of lamp and the type of untreated layer, and usually 1 minute~24 is small When.Treatment temperature is usually 10~200 DEG C.In addition, the exposure (i.e. amount of ultraviolet) of UV is usually 1mJ/cm2More than, preferably For 1~100000mJ/cm2, more preferably 10~100000mJ/cm2。
By implementing above-mentioned operation S106, the attachment for being attached to the second sides interarea 10a of supporting substrate 10 is removed.
The difference of the water contact angle of second interarea 10a of the supporting substrate 10 before and after the processing of above-mentioned operation S106 is (before processing Water contact angle-treated water contact angle) be preferably 30 degree or more, more preferably 50 degree or more.The upper limit is not limited especially System, usually 70 degree or less.
<<2nd mode>>
Fig. 5 is the flow chart of the manufacturing process in the 2nd mode of the manufacturing method for showing the glass laminate of the present invention.Such as Shown in Fig. 5, the 2nd mode has heating process S102, surface treatment procedure S106 and lamination process S104 successively.
Compared with above-mentioned 1st mode, other than the different this point of the implementation of surface treatment procedure S106 sequence, processing Method it is identical as the above-mentioned each process of 1st mode.More specifically, it in the 2nd mode, is manufactured in heating process S102 The supporting substrate of tape tree lipid layer, then, in the second main surface side implementation of the supporting substrate in the supporting substrate of the tape tree lipid layer State surface treatment (such as sided corona treatment), then, laminated glass on the silicone resin layer in the supporting substrate of tape tree lipid layer Substrate obtains glass laminate.Present embodiment can also obtain desired glass laminate.
It should be noted that if more above-mentioned 1st mode and the 2nd mode, then preferably the 1st mode.In the feelings of the 1st mode Under condition, since laminated glass substrate, impurity are not allowed after forming silicone resin layer, before surface treatment procedure S106 It is easily attached on silicone resin layer, the adaptation of glass substrate is better.
Using obtained in above-mentioned 1st mode and the 2nd mode glass laminate manufacture electronic device (including glass substrate and The glass substrate of the band member of electronic device component).In addition, being ground as needed to the implementation of the glass substrate of glass laminate Mill processing.
Below to these grinding process and electronic device manufacturing process (component formation process and separation process) the step of into Row is described in detail.
<Grinding process>
Grinding process is the work being ground to the second interarea 20b of the glass substrate 20 in gained glass laminate 100 Sequence.By the way that this process is arranged, the minute asperities and flaw of the second interarea 20b of glass substrate 20 can be removed, can improve and want Form the flatness in the face of electronic device component.Therefore, it is possible to improve the reliability of the electronic device as product.The effect Be 0.3mm glass substrates below for the thickness that is used in the present invention it is significant.This is because thickness 0.3mm glass below Glass substrate is difficult to individually be ground, it is difficult to for being ground in advance before making glass laminate 100.
The method of grinding is not particularly limited, well known method may be used, can using mechanicalness grinding, (physics is ground Mill) or chemically grind (chemical grinding).It is ground as mechanicalness, can use and blow the sandblasting side that ceramic abrasive grain is ground Chemical mechanical grinding (the CMP of abrasive grain and chemical solvent is applied in combination using polished silicon wafer, the grinding of grinding stone in method：Chemical Mechanical Polishing) method etc..
In addition, as chemical grinding (also referred to as wet etching), the table to glass substrate using chemical solution may be used The method that face is ground.
Wherein, from the point of view of in terms of the flatness of the second interarea 20b of the glass substrate 20 after grinding and cleanliness factor are higher, It is preferred that chemical mechanical grinding.In addition, as the abrasive grain used in chemical mechanical grinding, it can use and be ground well known to cerium oxide etc. Grain.
<Electronic device (glass substrate of band member) and its manufacturing method>
In the present invention, include the electronics device of glass substrate and electronic device component using the manufacture of above-mentioned glass laminate Part (glass substrate of band member).
The manufacturing method of the electronic device is not particularly limited, from the productivity of electronic device it is excellent in terms of from the point of view of, It is preferred that following method：Electronic device is formed on glass substrate in above-mentioned glass laminate manufactures having electronic device with component With the laminated body of component, using the glass substrate side interface of silicone resin layer as release surface from gained having electronic device component Laminated body isolate the supporting substrate of electronic device and tape tree lipid layer.
Hereinafter, manufacturing having electronic device with component by electronic device is formed on the glass substrate in above-mentioned glass laminate The process of the laminated body of part component is known as component formation process, will be using the glass substrate side interface of silicone resin layer as stripping The process for isolating electronic device and the supporting substrate of tape tree lipid layer from the laminated body of having electronic device component from face is known as dividing From process.
The material and step that are used in each process are described in detail below.
(component formation process)
Component formation process is formed on glass substrate 20 in the glass laminate 100 obtained in above-mentioned lamination process The process of electronic device component.More specifically, as shown in (A) of Fig. 6, (expose in the second interarea 20b of glass substrate 20 Surface) on form electronic device component 22, obtain the laminated body 24 of having electronic device component.
The electronic device component 22 used in this process is described in detail first, then to process the step of carry out It is described in detail.
(electronic device with component (functional element))
Electronic device component 22 is formed on the glass substrate 20 in glass laminate 100, is to constitute electronic device At least part of component.More specifically, as electronic device component 22, can enumerate for display device panel, Solar cell, thin-film secondary battery or it is formed with the component (example of electronic units such as the semiconductor crystal wafer of circuit etc. on surface Such as display device component, component used for solar batteries, thin-film secondary battery component, electronic component-use circuit).
For example, as component used for solar batteries, for silicon type, the transparent electrodes such as the tin oxide of anode can be enumerated, with p The metal etc. of silicon layer and cathode that layer/i layers/n-layer indicates can enumerate and compound type, dye sensitization type, quantum in addition Corresponding various components such as point-type etc..
In addition, as thin-film secondary battery component, for type lithium ion, the metal or gold of anode and cathode can be enumerated Belong to transparent electrodes, the lithium compound of electrolyte layer, the metal of current collection layer, the resins etc. as encapsulated layer such as oxide, in addition may be used Enumerate various components corresponding with ni-mh type, polymer-type, ceramic electrolyte type etc. etc..
In addition, as electronic component-use circuit, for CCD, CMOS, the metal of conductive part, the oxygen of insulation division can be enumerated SiClx, silicon nitride etc., can enumerate in addition with the various sensors such as pressure sensor, acceleration sensor, printed circuit board, Corresponding various components such as flexible printed circuit board, rigid flexible printed circuit board etc..
(the step of process)
The manufacturing method of the laminated body 24 of above-mentioned having electronic device component is not particularly limited, is used according to electronic device The type of the member of formation of component and the second interarea for making the glass substrate 20 in glass laminate 100 by a conventionally known method Electronic device component 22 is formed on 20b.
It should be noted that electronic device component 22 can not be finally on the second interarea 20b of glass substrate 20 The whole (hereinafter referred to as " whole components ") of the component of formation, but a part (hereinafter referred to as " the part structure of whole components Part ").Band can also be made all in the glass substrate for the band part component removed from silicone resin layer 16 in subsequent handling The glass substrate (being equivalent to aftermentioned electronic device) of component.
In addition, for the glass substrate for the band whole component removed from silicone resin layer 16, it can be in its release surface ( One interarea 20a) on be formed with other electronic device components.In addition it is also possible to the laminated body of assembled belt whole component, then certainly The supporting substrate 18 of laminated body release band resin layer with whole components manufactures electronic device.In turn, 2 bands can also be used The laminated body of whole components assembles electronic device, and the laminated body for then carrying whole components removes the branch support group of 2 tape tree lipid layer Plate 18 manufactures the electronic device with 2 glass substrates.
For example, when in case of manufacturing OLED, in order to the glass substrate 20 of glass laminate 100 and organosilicon On the surface of 16 side opposite side of resin layer (the second interarea 20b for being equivalent to glass substrate 20) form organic EL structures and into The following various layers of row are formed, are handled：Formed transparent electrode, then on the face for form transparent electrode be deposited hole injection layer, Hole transmission layer, luminescent layer, electron transfer layer etc. form backplate, encapsulated using package board etc..Formed as these layers, Processing, specifically, such as can enumerate film process, vapor deposition treatment, the processing of the bonding of package board.
In addition, when for example manufacturing TFT-LCD, manufacturing method has following various processes etc.：TFT formation process, In, on the second interarea 20b of the glass substrate 20 of glass laminate 100, using anti-corrosion liquid to passing through CVD method and sputtering method etc. Conventional membrane formation process is formed by the progress pattern such as metal film and metal oxide film and is formed, to form thin film transistor (TFT) (TFT)；CF shapes At process, wherein on the second interarea 20b of the glass substrate 20 of another glass laminate 100, anti-corrosion liquid is used for pattern shape At to form colour filter (CF)；And bonding process, wherein by the laminated body and CF of the band TFT obtained in TFT formation process The laminated body of the band CF obtained in formation process is laminated.
In TFT formation process, CF formation process, using well-known photoetching technique, etching technique etc. in glass substrate TFT, CF are formed on 20 the second interarea 20b.At this point, the coating fluid as pattern formation, can be used anti-corrosion liquid.
It should be noted that before forming TFT, CF, can as needed and to the second interarea 20b of glass substrate 20 into Row cleaning.As cleaning method, well-known dry clean, wet-cleaned can be used.
In bonding process, make the thin film transistor (TFT) forming face of the laminated body with TFT and the colour filter shape of the laminated body with CF It is opposite at face, it is bonded using sealant (such as unit forms ultraviolet hardening sealant).Then, to by band TFT Laminated body and laminated body with CF be formed by unit and inject liquid crystal material.As the method for injection liquid crystal material, such as There is decompression injection method, injection method is added dropwise.
(separation process)
It is following process shown in (B) of separation process such as Fig. 6：With the boundary of silicone resin layer 16 and glass substrate 20 As release surface, the laminated body 24 of the having electronic device component obtained from above-mentioned component formation process, which is isolated, to be laminated in face The supporting substrate 18 of the glass substrate 20 (electronic device) and tape tree lipid layer of electronic device component 22, obtains including electronic device With the electronic device 26 of component 22 and glass substrate 20.
The electronic device component 22 on glass substrate 20 when stripping is the part for forming required whole member of formation When, remaining member of formation can also be formed on glass substrate 20 after isolation.
The method that the supporting substrate 18 of glass substrate 20 and tape tree lipid layer is removed is not particularly limited.Specifically, Such as it can be inserted into the object of sharp cutter shape at the interface of glass substrate 20 and silicone resin layer 16, form rising for stripping Then point blows water and the fluid-mixing of compressed air etc. to be removed.Preferably：With the layer of having electronic device component The supporting substrate 10 of stack 24 be upside, electronic device with 22 side of component be downside mode be arranged on platform, by electronics device Part is first in this state with 22 side vacuum suction of component (being carried out successively in the case that two sides is laminated with supporting substrate) on platform First make 16 interface of cutter intrusion glass substrate 20- silicone resin layers.Then, then with multiple vacuum cup adsorbent support substrates 10 sides make vacuum cup rise successively from the near sites for inserting cutter.In this way, in silicone resin layer 16 and glass base The interface of plate 20, silicone resin layer 16 cohesional failure face form air layer, the air layer is to interface, cohesional failure face whole face Extension, can easily remove supporting substrate 10.
In addition, supporting substrate 10 can be laminated to manufacture the glass laminate 100 of the present invention with new glass substrate.
In addition, when detaching electronic device 26 from the laminated body 24 of having electronic device component, occur by using ion Device is blowed, controls humidity, can further suppress the fragment Electrostatic Absorption of silicone resin layer 16 in electronic device 26.
The manufacturing method of above-mentioned electronic device 26 is suitable for manufacturing small-sized aobvious used in the mobile terminal of mobile phone, PDA etc Showing device.Display device mainly has LCD or OLED；As LCD, including TN types, STN types, FE types, TFT types, mim type, IPS types, VA types etc..Substantially passive driving types, active-drive any display device in the case of can apply.
As the electronic device 26 manufactured in aforementioned manners, can enumerate：With glass substrate and display device component Display device panel, the solar cell with glass substrate and component used for solar batteries has glass substrate and thin The thin-film secondary battery of film secondary cell component, the electronic unit etc. with glass substrate and electronic device component.As Display device panel, including liquid crystal display panel, organic EL panel, Plasmia indicating panel, field emission panel etc..
Embodiment
The present invention is further illustrated by the following examples etc., but the present invention is not limited to these examples.
In embodiment below and comparative example, as glass substrate, the glass plate formed by alkali-free pyrex is used (long 880mm, wide 680mm, plate thickness 0.2mm, linear expansion coefficient 38 × 10-7/ DEG C, Asahi Glass Co., Ltd manufacture, trade name “AN100”).In addition, as supporting substrate, glass plate (long 920mm, the width equally formed by alkali-free pyrex is used 730mm, plate thickness 0.5mm, linear expansion coefficient 38 × 10-7/ DEG C, Asahi Glass Co., Ltd manufacture, trade name " AN100 ").
<Embodiment 1>
At the beginning, it after the surface of supporting substrate being cleaned with aqueous alkali, is cleaned with pure water, to purifying.
Then, by aftermentioned solution S die coating machine (coating speed：40mm/s, discharge rate：8ml) it is coated on supporting substrate The first interarea on, by containing uncured bridging property organopolysiloxane layer (curable silicone composition layer) setting exist On supporting substrate, supporting substrate (the coated weight 20g/m with curability layer is obtained2)。
(solution S)
Will as ingredient (A) straight-chain ethylene ylmethyl polysiloxanes (manufacture of AZmax companies, trade name " VDT-127 ", Viscosity at 25 DEG C：The mol% of 700-800cP (centipoise), vinyl in organopolysiloxane 1mol：0.325) and as at Straight-chain methyl hydrogen polysiloxanes (manufacture of AZmax companies, trade name " HMS-301 ", the viscosity at 25 DEG C of point (B)：25-35cP The quantity of (centipoise), 1 intramolecular bond together in the hydrogen atom of silicon atom：8) mixing so that whole vinyl and be bonded to silicon original The molar ratio (hydrogen atom/vinyl) of whole hydrogen atoms of son is 0.9, relative to 100 mass parts of mixture of siloxanes, mixing Silicon compound (boiling point with acetylene class unsaturated group shown in following formula (1) as ingredient (C)：120 DEG C) 1 mass Part.
HC≡C-C(CH3)2-O-Si(CH3)3Formula (1)
Then, the total amount relative to ingredient (A), ingredient (B) and ingredient (C), it is a concentration of with the platinum to convert by platinum Platinum group catalyst (manufacture of organosilicon Co., Ltd. of SHIN-ETSU HANTOTAI, trade name " CAT-PL-56 ") is added in the mode of 100ppm, obtains organic The mixed liquor of polysiloxane composition.In turn, relative to 100 mass parts of the mixed liquor of gained, IP Solvent2028 are added (just It evaporates a little：200 DEG C, Idemitsu Kosen Co., Ltd.'s manufacture) 150 mass parts, obtain mixed solution.
Then, above-mentioned band curability layer is loaded in the front end of the multiple supporting pins for the bottom being set in heat treatment apparatus Supporting substrate.In addition, supporting substrate in the front end of supporting pin and the supporting substrate with curability layer the second main surface side (with There are curable silicone composition layer side opposite side) surface contact, supporting substrate the second main surface side exist not with Support the region of pin contacts.
In heat treatment apparatus, match on the top of the curable silicone composition layer of the supporting substrate with curability layer Heating plate is set, (prebake adds to the supporting substrate progress heating in 3 minutes with curability layer at 200 DEG C using the heating plate Heat).
Then, for the supporting substrate with curability layer after above-mentioned heat treatment, further implement 1450 at 250 DEG C Second heat treatment (rear baking processing), supporting substrate the first interarea formed 8 μm of thickness silicone resin layer.
Then, it is suppressed at room temperature by the silicone resin layer face paste on glass substrate and supporting substrate by atmospheric pressure It closes, obtains glass laminate A.
In the glass laminate A of gained, bubble is not generated between supporting substrate and glass substrate and silicone resin layer Ground is closely sealed, and deformation defect is also not present, and flatness is also good.In addition, in glass laminate A, silicone resin layer and support The peel strength at the interface of the layer of substrate is greater than the peel strength of the layer of glass substrate and the interface of silicone resin layer.
Then, sided corona treatment (electric power 1kW, place are implemented to the second interarea of the supporting substrate in the glass laminate A of gained Manage speed 4m/min).
The water contact angle before and after the sided corona treatment of the second interarea of the supporting substrate in glass laminate A is measured, it is as a result electric To be 5 degree after 70 degree, sided corona treatment before dizzy processing.According to these measurement results, confirm eliminated by sided corona treatment it is attached The organic siliconresin in the second main surface side of supporting substrate.
(stripping evaluation)
So that the side that the supporting substrate in implementing the glass laminate A of sided corona treatment is contacted with the cushion of polyurethane Glass laminate A is positioned on cushion by formula.Then, with 100g/cm2, glass laminate A is crimped on platform 120 seconds Pad.After crimping, on one side to air and water is blowed between supporting substrate and cushion, the stripping of the two is carried out on one side, as a result can be shelled From.
In addition, also obtained in the case where the processing speed in sided corona treatment is changed to 1m/min, 6m/min with it is upper State same result.
<Comparative example 1>
Other than sided corona treatment is not carried out, glass laminate B is made according to the same step of above-described embodiment 1.
Glass laminate A is replaced using glass laminate B, above-mentioned (stripping evaluation) is carried out, as a result fails to remove glassy layer Stack B.
<Embodiment 2>
In this example OLED is manufactured using the glass laminate A for implementing sided corona treatment obtained in embodiment 1.
First, nitridation is made by plasma CVD method successively on the second interarea of the glass substrate in glass laminate A Silicon, silica, non-crystalline silicon film forming.Then, the boron for injecting low concentration into amorphous silicon layer by ion doping apparatus, in nitrogen gas Heated under atmosphere, and carries out Dehydroepiandrosterone derivative.Then, at the crystallization that amorphous silicon layer is carried out by laser anneal device Reason.Then, the phosphorus for injecting low concentration into amorphous silicon layer by using photolithographic etching and ion doping apparatus, forms N-type With the TFT zone of p-type.Then, silicon oxide film film forming, shape are made in the second main surface side of glass substrate by plasma CVD method After gate insulating film, so that molybdenum is formed a film by sputtering method, gate electrode is formed by using photolithographic etching.Then, lead to Boron and phosphorus that photoetching process and ion doping apparatus inject high concentration to N-type, the respective desired region of p-type are crossed, source region is formed Domain and drain region.Then, in the second main surface side of glass substrate, by using the film forming of the silica of plasma CVD method Interlayer dielectric is formed, TFT electrodes are formed by using the film forming of the aluminium of sputtering method and using photolithographic etching.Then, exist Under hydrogen atmosphere, after being heated and carrying out hydrogenation treatment, by using the film forming of the silicon nitride of plasma CVD method And form passivation layer.Then, it in the second main surface side coated UV line curable resin of glass substrate, is formed by photoetching process flat Smoothization layer and contact hole.Then, so that tin indium oxide is formed a film by sputtering method, pixel electricity is formed by using photolithographic etching Pole.
Then, following substance is made to form a film successively in the second main surface side of glass substrate by vapour deposition method：It is injected as positive hole The 4,4' of layer, 4 "-three (3- methylphenylphenyl aminos) triphenylamines, bis- [(N- naphthalenes)-N- phenyl] as positive hole transport layer Benzidine is mixed with the bis- [4- [N- (4- of 40 volume %2,6- as luminescent layer in 8-hydroxyquinoline aluminium complex (Alq3) Methoxyphenyl)-N- phenyl] aminostyryl] mixture made of naphthalene -1,5- dintrile (BSN-BCN), as electron-transport The Alq3 of layer.Then, aluminium film is made by sputtering method, by using photolithographic etching shape paired electrode.Then, in glass base Second main surface side of plate is bonded another glass substrate to be packaged by the adhesive linkage of ultraviolet hardening.According to above-mentioned step Suddenly organic EL structures are formed on the glass substrate.The glass laminate A with organic EL structures is (following on the glass substrate Referred to as panel A) be the present invention having electronic device component laminated body.
Then, make the encapsulation side vacuum suction of panel A in platform, then the glass substrate in the corner of panel A and tree The stainless steel cutter of the interface inserting thickness 0.1mm of lipid layer forms the starting point of stripping at the interface of glass substrate and resin layer. Then, with the first interarea of supporting substrate of vacuum cup absorption panel A, then sucker is made to increase.Herein, occur on one side from ion Device (manufacture of Keyemce company) is blowed to the interface except electronic fluids carry out the insertion of cutter on one side.Then, continue to send out from ion Raw device court is formed by gap and blows except electronic fluids, and promotes vacuum cup while to stripping front water filling.As a result, The glass substrate for foring organic EL structures is only left on platform, the supporting substrate of tape tree lipid layer can be removed.
Then, separated glass substrate is cut off using laser cutter or scribing and breaking, is divided into multiple After unit, the glass substrate for foring organic EL structures and opposite substrate are assembled, implements module formation process and comes Make OLED.The obtained OLED is characteristically without leading to the problem of.
It is described the invention in detail with reference to specific embodiment, it will be evident to those skilled in the art that can not The present invention is made various changes, is corrected with being detached from the spirit and scope of the present invention.
The application goes out to be willing to 2013-260453 based on the Japanese Patent that on December 17th, 2013 submits, content in this as With reference to and be incorporated to.

Claims (9)

1. a kind of manufacturing method of glass laminate, the glass laminate have successively supporting substrate, silicone resin layer and Glass substrate, this method include following processes：
Heating process, wherein will be provided with the supporting substrate with the first interarea and the second interarea and configure in the branch support group The supporting substrate with curability layer of curable silicone composition layer on first interarea of plate is from the supporting substrate Second main surface side be supported with multiple supporting pins, heat treatment is implemented to the supporting substrate with curability layer, Form silicone resin layer；
Lamination process, wherein after the heating process, the laminated glass substrate on the silicone resin layer；
Surface treatment procedure, wherein after the lamination process or after the heating process and before the lamination process, At least second interarea of the supporting substrate is implemented selected from by sided corona treatment, corona treatment and UV ozone treatment groups At group at least one kind of processing.
2. the manufacturing method of glass laminate according to claim 1, wherein the curable silicone composition layer is extremely It is few to contain organic alkenyl polysiloxanes with alkenyl and the poly- silica of organic hydrogen with the hydrogen atom with silicon atom bonding Alkane.
3. the manufacturing method of glass laminate according to claim 1, wherein the heating process has successively the 1st Temperature implements the 1st heating process of heat treatment and implements the 2nd of heat treatment in the 2nd temperature higher than the 1st temperature Heating process.
4. the manufacturing method of glass laminate according to claim 2, wherein the heating process has successively the 1st Temperature implements the 1st heating process of heat treatment and implements the 2nd of heat treatment in the 2nd temperature higher than the 1st temperature Heating process.
5. the manufacturing method of glass laminate according to claim 3, wherein the supporting substrate with curability layer is logical Cross first master that the curable silicone composition containing curable silicone and solvent is coated on to the supporting substrate It is formed on face,
1st temperature meets：+ 30 DEG C of the initial boiling point of the temperature of -30 DEG C of the initial boiling point of the solvent≤the 1st≤solvent.
6. the manufacturing method of glass laminate according to claim 4, wherein the supporting substrate with curability layer is logical Cross first master that the curable silicone composition containing curable silicone and solvent is coated on to the supporting substrate It is formed on face,
1st temperature meets：+ 30 DEG C of the initial boiling point of the temperature of -30 DEG C of the initial boiling point of the solvent≤the 1st≤solvent.
7. according to the manufacturing method of glass laminate according to any one of claims 1 to 6, wherein in the lamination process Afterwards, implement surface treatment procedure.
8. the manufacturing method of glass laminate according to claim 7, wherein in the surface treatment procedure, along The conveying direction of the glass laminate arranges multiple electrodes pair, and the electrode is obtained to having in the conveying lamination process The transport path of the glass laminate arrived and opposite high-field electrode and grounding electrode, by one of the adjacent electrode centering High-field electrode is configured at across the side of the transport path, another high-field electrode is configured at across the transport path The other side,
The glass laminate is conveyed along the transport path on one side, high frequency voltage is applied to the high-field electrode on one side, it is right The glass laminate implements sided corona treatment.
9. a kind of manufacturing method of electronic device, this method includes following processes：
Component formation process, wherein in the glass by being manufactured according to manufacturing method according to any one of claims 1 to 8 Electronic device component is formed on the surface of the glass substrate of laminated body, obtains the laminated body of having electronic device component；
Separation process, wherein there is the silicone resin layer and institute from the removal of the laminated body of the having electronic device component The supporting substrate for stating the tape tree lipid layer of supporting substrate obtains the electronics with the glass substrate and the electronic device component Device.
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US10444560B2 (en) * 2015-09-04 2019-10-15 Sharp Kabushiki Kaisha Method of producing display panel
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102596565A (en) * 2009-08-27 2012-07-18 旭硝子株式会社 Multilayer structure with flexible base material and support, panel for use in electronic device provided with support and production method for panel for use in electronic device
CN103042803A (en) * 2011-10-12 2013-04-17 旭硝子株式会社 Method for producing electronic device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1914066B1 (en) * 2005-08-09 2016-09-07 Asahi Glass Company, Limited Thin sheet glass laminate and method for manufacturing display using thin sheet glass laminate
JP4930161B2 (en) * 2006-05-08 2012-05-16 旭硝子株式会社 Thin glass laminated body, display device manufacturing method using thin glass laminated body, and supporting glass substrate
JP5024087B2 (en) * 2008-02-05 2012-09-12 旭硝子株式会社 GLASS LAMINATE, PANEL FOR DISPLAY DEVICE WITH SUPPORT AND METHOD FOR PRODUCING THEM
WO2009128359A1 (en) * 2008-04-17 2009-10-22 旭硝子株式会社 Glass laminate, display panel with support, method for producing glass laminate and method for manufacturing display panel with support
JP5029523B2 (en) * 2008-07-14 2012-09-19 旭硝子株式会社 GLASS LAMINATE, PANEL FOR DISPLAY DEVICE WITH SUPPORT, PANEL FOR DISPLAY DEVICE, DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
TW201033000A (en) * 2009-01-09 2010-09-16 Asahi Glass Co Ltd Glass laminate and manufacturing method therefor
JP5562597B2 (en) * 2009-08-28 2014-07-30 荒川化学工業株式会社 SUPPORT, GLASS SUBSTRATE LAMINATE, DISPLAY DEVICE PANEL WITH SUPPORT AND METHOD FOR PRODUCING DISPLAY DEVICE PANEL
CN102574371B (en) * 2009-10-20 2015-10-07 旭硝子株式会社 Glass laminate, the display unit panel being with supporting mass, display unit panel, display unit and their manufacture method
JP5760376B2 (en) * 2010-10-22 2015-08-12 旭硝子株式会社 SUPPORT, GLASS SUBSTRATE LAMINATE, PANEL FOR DISPLAY DEVICE WITH SUPPORT, ORGANOPOLYSILOXANE COMPOSITION, AND PROCESS FOR PRODUCING DISPLAY DEVICE PANEL
CN103889712B (en) * 2011-10-18 2015-07-08 旭硝子株式会社 Laminate, method for producing laminate, and method for producing glass substrate having member for electronic devices attached thereto
JP5887946B2 (en) * 2012-01-18 2016-03-16 旭硝子株式会社 Method for manufacturing electronic device and method for manufacturing glass laminate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102596565A (en) * 2009-08-27 2012-07-18 旭硝子株式会社 Multilayer structure with flexible base material and support, panel for use in electronic device provided with support and production method for panel for use in electronic device
CN103042803A (en) * 2011-10-12 2013-04-17 旭硝子株式会社 Method for producing electronic device

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