CN104701455A - Hybrid membrane production method - Google Patents
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Abstract
The invention relates to a semiconductor material production technology, in particular to a hybrid membrane production method. The hybrid membrane production method includes the following steps: dissolving an organic semiconductor material in a first solvent to form a first mixture with concentration of 0.01-20mg/mL; dispersing an inorganic nano material into a second solvent to form a second mixture with concentration of 0.01-10mg/mL; transferring the first mixture onto an inert substrate for standing, and forming an organic semiconductor nanocrystalline after evaporation of the first solvent; transferring the second mixture onto the surface of the organic semiconductor nanocrystalline, performing annealing treatment and obtaining a hybrid membrane made of organic-inorganic materials after evaporation of the second solvent. The production method is simple to operate without rigid environments of high temperature and high vacuum, compatible with printed electronics processing methods such as ink-jet printing and aerosol jet printing, short in production cycle, low in cost and suitable for large-area mass production.
Description
Technical field
The present invention relates to semi-conducting material technology of preparing, especially a kind of preparation method of hybrid organic-inorganic film.
Background technology
Organic semiconducting materials, due to the photoelectric characteristic of its uniqueness, caused the interest that people are huge in recent years.Especially, in recent years along with the development of solubilize processing, in the preparation of low cost, large-area semiconductor device, incomparable advantage was shown based on organic semiconducting materials.Meanwhile, the flexibility that organic semiconducting materials is good make its have in the organic electro-optic device field of collapsible, lightweight important should.Although at present organic photoelectrical material preparation and all achieve huge progress with its application in the opto-electronic device, but the mobility that organic semiconducting materials is low, narrow spectral absorption are still the key factors limiting its application.
Compare organic semiconducting materials, inorganic nano material especially inorganic nano-particle shows high essential mobility and strong, wide spectral absorption, and the photoelectric device therefore based on above-mentioned material shows high efficiency.And the photoelectric characteristic of inorganic nano material nano particle shows obvious size-dependent, therefore by changing the size of grain, and then its photoelectricity characteristic can be regulated.At present, the preparation of multiple photoelectric device as memory, photo-detector, optoelectronic switch, field-effect transistor and solar cell etc. has been realized based on inorganic nano material.But inorganic nano-particle film forming is poor, be difficult to the preparation realizing large area, flexible device.
Hybrid inorganic-organic materials can combining characteristics such as easy to the photoelectric characteristic of inorganic nano-particle uniqueness and organic semiconducting materials film forming, flexibilities, and can overcome again the deficiency of homogenous material, be therefore a kind of desirable photoelectric material.At present, mostly the film of hybrid inorganic-organic is based on the conjugated polymer of Yi Chengmo and the preparation of inorganic quantum dot.But because mostly polymer is to occur with the form of polycrystalline in hybridized film, therefore the mobility of itself is lower, limits the mobility of composite membrane, simultaneously because polymer stabilisation is poor, therefore cause the repeatability of hybrid material poor.
Summary of the invention
For the problems referred to above, the invention provides a kind of preparation method of hybridized film, comprise the steps:
Step one: be dissolved in by organic semiconducting materials in the first solvent, forms the first mixture that concentration is 0.01 ~ 20mg/mL; Inorganic nano material is distributed in the second solvent, forms the second mixture that dispersion concentration is 0.01 ~ 10mg/mL;
Step 2: be transferred in inert substrate by described first mixture, leaves standstill, after described first solvent evaporates, forms organic semiconductor nano;
Step 3; Described second mixture is transferred to described organic semiconductor nanocrystal surface, then carries out annealing in process, after described second solvent evaporates, obtain organic-inorganic material and form hybridized film.
Further, described organic semiconducting materials is the one in metal phthalocyanine compound, metal porphyrins, perylene diimide or derivatives thereof, naphthalimide or derivatives thereof, thiophene or derivatives thereof.
Further, described metal phthalocyanine compound or the concentration of metal porphyrins in the first mixture are saturated concentration.
Further, the concentration of Suo Shu perylene diimide or derivatives thereof in the first mixture is 0.1 ~ 5mg/mL.
Further, the concentration of described naphthalimide or derivatives thereof in the first mixture is 0.1 ~ 5mg/mL.
Further, the concentration of described thiophene or derivatives thereof in the first mixture is 0.2 ~ 20mg/mL.
Further, in described second mixture, inorganic nano material dispersion concentration is 0.1 ~ 0.5mg/mL.
Further, described inorganic nano material is the one in metal nanoparticle, carbon nanomaterial, metal oxide, metal sulfide, metal selenide or metal telluride.
Further, described annealing in process comprises: carry out in annealing way in normal temperature, heating, low pressure, atmosphere of inert gases or in solvent vapo(u)r one or more.
Further, the temperature of described annealing in process is 80 ~ 120 DEG C, and the processing time is 10 ~ 30 minutes.
Further, the transfer method of described first mixture and/or the second mixture comprises the one in spin coating, dropping, immersion, roller coat, Electrospun, aerosol spray printing, ink jet printing, intaglio printing or silk screen printing.
Further, the first described solvent comprises at least one in chloroform, carrene, chlorobenzene, meta-xylene, ortho-xylene, paraxylene, paracide, m-dichlorobenzene or o-dichlorohenzene.
Further, the second described solvent comprises water or alcohol.
Beneficial effect:
Hybridized film provided by the invention can realize solubilize preparation, by regulating kind, the concentration of organic nanocrystalline material, can different in size, that crosslinking degree is different, performance is different organic semiconducting materials nanocrystalline on to adulterate the inorganic nano material of variety classes, concentration or pattern, the hybridization film material of different performance can be obtained, meet different components and parts in technology application demands such as conductivity, light absorption, mobilities.Preparation method of the present invention is simple to operate, does not need the severe rugged environment of high temperature, high vacuum, and with printed electronic processing method as inkjet printing, aerosol spray printing etc. are compatible mutually, fabrication cycle is short, cost is low, be easy to large area makes in enormous quantities.The hybridized film obtained maintains the flexibility of organic nanocrystalline film, more effectively improves the performance such as conductivity, mobility, therefore has great importance in preparation low cost, large area, high performance organic electro-optic device.
Accompanying drawing explanation
Fig. 1 is the scanning electron microscope (SEM) photograph of the hybrid organic-inorganic film that the embodiment of the present invention 1 obtains.
Fig. 2 is the hybrid organic-inorganic film of the embodiment of the present invention 1 acquisition and the current-voltage curve figure of zinc porphyrin nano-crystal film.
Fig. 3 is the hybrid organic-inorganic film of the embodiment of the present invention 4 acquisition and the absorption curves figure of polythiophene nano-crystal film.
Fig. 4 is the transfer curve figure of the transistor of hybrid organic-inorganic film under different levels of doping of the embodiment of the present invention 4.
Fig. 5 is hybrid organic-inorganic film and the current-voltage curve figure of octaethylporphyrin cobalt nanocrystal body thin film under light conditions of the embodiment of the present invention 5 acquisition.
Embodiment
The organic-inorganic material hybridized film that the present invention obtains is make organic molecule be cross-linked with each other into the netted of one dimension or dendritic morphology by intermolecular force to be formed between its organic semiconductor is nanocrystalline; And inorganic nanoparticles be dispersed in organic semiconductor nanocrystalline on, this inorganic nanoparticles is nanocrystalline with organic semiconductor is be combined by the effect of covalent bond or non-covalent bond.
Prepare this hybridized film, following three steps can be divided into:
Step one: be dissolved in by organic semiconducting materials in the first solvent, forms the first mixture that concentration is 0.01 ~ 20mg/mL; Inorganic nano material is distributed in the second solvent, forms the second mixture that concentration is 0.01 ~ 10mg/mL.
Wherein, for different organic semiconducting materials, the first solvent kind adopted is also different.For the organic semiconducting materials (such as metal phthalocyanine compound or metal porphyrins, solubility is not more than 5mg/mL usually) that a class solubility is lower, the principle of the first solvent is selected to be dissolve such organic semiconducting materials more as far as possible; And for higher organic semiconducting materials (the such as thiophene or derivatives thereof of solubility, solubility can reach 20mg/mL in some organic solvent), under guaranteeing that organic semiconducting materials makes the prerequisite of nanocrystalline normal formation under certain solubility, the selection of the first solvent can select low-boiling solvent as far as possible, reduces subsequent anneal temperatures and time; For organic semiconducting materials structural unstable under some hot environments, then need the first solvent selecting boiling point lower, guarantee that organic semiconductor organic molecular structure in annealing process does not change.
In addition, the selection of the second solvent also needs the character coordinating inorganic nano material, organic semiconducting materials.The effect of the second solvent be in order to make inorganic nano material evenly spread to organic semiconductor nanocrystalline on.Therefore, on the one hand, the dispersion concentration of inorganic nano material can not be excessive, otherwise easily cause inorganic nano material partial coalescence on organic semiconductor is nanocrystalline, do not reach due performance; On the other hand, the second solvent of selection can not dissolve and destroy this nanocrystalline structure.
Step 2: be transferred in inert substrate by described first mixture, leaves standstill, after described first solvent evaporates, forms organic semiconductor nano.
Step 3; Described second mixture is transferred to described organic semiconductor nanocrystal surface, then carries out annealing in process, after described second solvent evaporates, obtain organic-inorganic material and form hybridized film.
Below, will describe in detail each embodiment of the present invention by reference to the accompanying drawings.
Embodiment 1
The hybridized film of the present embodiment, in raw material, organic semiconducting materials adopts zinc porphyrin, and the first solvent is chloroform, octane, and the ratio of chloroform and octane is 4:1; Inorganic nano material adopts zinc oxide, and the second solvent is ethanol.
The preparation method of this hybridized film, comprises the steps:
Step one: be dissolved in by zinc porphyrin in chloroform, octane mixed liquor, forms the first mixture that porphyrin zinc concentration is 1mg/mL; Be distributed to by zinc oxide in ethanol, ultrasonic disperse is even, forms the second mixture that zinc oxide concentration is 0.5mg/mL.Wherein, the different solubility of zinc porphyrin in different solvents, and the quality of follow-up nanocrystalline assembling ability is affected to some extent.Those skilled in the art are known, for metal phthalocyanine compound or metal porphyrins itself, solubility is in organic solvent not high, therefore for obtaining the structure of nano-crystal film, adjustment metal phthalocyanine compound or the concentration of this compounds of metal porphyrins in the first mixture is needed to be preferably saturated concentration.Under the prerequisite realizing the nanocrystalline smooth formation of organic semiconductor, the components and parts function needs can applied for actual hybridized film, regulate zinc porphyrin, oxidation zinc concentration, thus the performance (as mobility, conductivity etc.) of regulation and control hybridized film meets application request.
Step 2: adopt the method dripped to be transferred on inert substrate Si substrate in described first mixture, normal temperature leaves standstill 40 minutes, forms zinc porphyrin nanocrystalline after described chloroform, octane volatilization.
Step 3; Adopt the method dripped to be transferred to described zinc porphyrin nanocrystal surface in described second mixture, then through 100 DEG C of thermal anneal process 10 minutes, after ethanol volatilization completely, obtain organic-inorganic material and form hybridized film, its appearance structure as shown in Figure 1.
As seen from Figure 1, described hybridized film forms with Zinc oxide nanoparticle by crosslinked zinc porphyrin is nanocrystalline.Every root zinc porphyrin is nanocrystalline in wire, and diameter range is 10 ~ 2000nm, length is 5 ~ 1000 μm; And be cross-linked with each other into the netted of one dimension or dendritic morphology.Described Zinc oxide nanoparticle is dispersed in the nanocrystalline surface of zinc porphyrin.The hybridized film that the present embodiment obtains shows that it has large-area manufacturing prospect, has good reappearance.
Composition graphs 2 is known, and separately by the nanocrystalline non-doping formed of zinc porphyrin, its conductive capability can not show a candle to hybridized film.Visible, the hybridized film that organic-inorganic material is formed, maintains the original flexibility of organic nanocrystalline film, also obtains good electric conductivity simultaneously.
Embodiment 2
The hybridized film of the present embodiment, in raw material, organic semiconducting materials adopts 8 methyl porphyrin cobalt, and the first solvent is chlorobenzene; Inorganic nano material adopts titanium dioxide, and the second solvent is water.
Step one: be dissolved in by 8 methyl porphyrin cobalt in chlorobenzene mixed liquor, forms the first mixture that 8 methyl porphyrin cobalt concentration is 2mg/mL; Be distributed to by titanium dioxide in distilled water, ultrasonic disperse is even, forms the second mixture that titanium dioxide concentration is 0.2mg/mL.
Step 2: adopt the method for spin coating to be transferred to inert substrate SiO in described first mixture
2on substrate, normal temperature leaves standstill 40 minutes, then 120 DEG C of annealing in process 30 minutes, after described chlorobenzene volatilization, form 8 methyl porphyrin cobalt nanocrystal.Wherein, be to allow chlorobenzene solvent volatilize sooner totally during the annealing in process of this step.
Step 3; Described 8 methyl porphyrin cobalt nanocrystal to be dipped in the second mixture 30 seconds, then through 120 DEG C of thermal anneal process 30 minutes, after water volatilization completely, the hybrid organic-inorganic film that acquisition one dimension 8 methyl porphyrin cobalt and titania nanoparticles are formed, it is similar that its appearance structure and embodiment 1 obtain hybridized film.Compared to the 8 methyl porphyrin cobalt of single film forming, the electric conductivity of the hybridized film of the present embodiment significantly improves.
Embodiment 3
The hybridized film of the present embodiment, organic semiconducting materials Cai perylene diimide in raw material, the first solvent is chloroform, methyl alcohol, and its volume ratio is about 1:5; Inorganic nano material adopts silver nano-grain, and the second solvent is ethanol.
Perylene diimide is dissolved in chloroform, methyl alcohol mixed liquor by step one:, and Xing Cheng perylene diimide concentration is first mixture of 0.2mg/mL; Be distributed to by silver nano-grain in ethanol, ultrasonic disperse is even, forms the second mixture that silver nano-grain concentration is 0.5mg/mL.To in this compounds of perylene diimide or derivatives thereof, adjusting its concentration in the first mixture is within the scope of 0.1 ~ 5mg/mL, and equal Absorbable organic halogens obtains nano-crystalline thin membrane structure.
Step 2: adopt the method for aerosol spray printing to be transferred on inert substrate PETG (PET) substrate in described first mixture, normal temperature leaves standstill 30 minutes, after described chloroform, methyl alcohol volatilization, shape becomes perylene diimide nanocrystalline.
Step 3; The method dripped is adopted to be transferred to Suo Shu perylene diimide nanocrystal surface in described second mixture, then through 80 DEG C, low pressure (10
-2pa) thermal anneal process 30 minutes, after ethanol volatilization completely, obtain the nanocrystalline hybrid organic-inorganic film formed with silver nano-grain of a dimension perylene diimide, it is similar that its appearance structure and embodiment 1 obtain hybridized film.Compared to single film forming perylene diimide, the hybridized film electric conductivity of the present embodiment significantly improves.
Embodiment 4
The hybridized film of the present embodiment, in raw material, organic semiconducting materials adopts polythiophene (P3HT), and the first solvent is chlorobenzene; Inorganic nano material adopts titanium dioxide, and the second solvent is water.
Step one: be dissolved in by polythiophene in chlorobenzene mixed liquor, forms the first mixture that polythiophene concentration is 3mg/mL; Be distributed to by titanium dioxide in water, ultrasonic disperse is even, forms the second mixture that titanium dioxide concentration is 0.1mg/mL.For this compounds of thiophene or derivatives thereof, solubility is in organic solvent comparatively large, and its concentration in the first mixture can adjust within the scope of 0.2 ~ 20mg/mL, all can obtain the rock-steady structure of nano-crystal film.
Step 2: adopt the method for spin coating to be transferred to inert substrate SiO in described first mixture
2on substrate, normal temperature leaves standstill 140 minutes, after described chlorobenzene volatilization, form polythiophene nano-crystal film.
Step 3; The method of spray printing is adopted to be transferred to described polythiophene nanocrystal surface in described second mixture, then normal temperature places 60 minutes, again through 120 DEG C of thermal anneal process 30 minutes, after water volatilization completely, the hybrid organic-inorganic film (P3HT-TiO that acquisition one dimension polythiophene and titania nanoparticles are formed
2), it is similar that its appearance structure and embodiment 1 obtain hybridized film.As can be seen from Figure 3, the hybrid organic-inorganic film (P3HT-TiO of the present embodiment acquisition
2) its extinction characteristic, compared to the polythiophene (P3HT) of single film forming, the hybridized film light absorptive of the present embodiment obviously strengthens.
By adjusting the doping ratio of titanium dioxide and polythiophene, the hybridized film of different mobility can also be obtained.Such as, present embodiments provide polythiophene, contrast experiment that both titanium dioxide ratio is respectively 1:0.2 and 1:0.8, compare its electrology characteristic difference of hybridized film of different levels of doping.From finding out Fig. 4, different dopant ratio regular meetings affect the carrier transmission characteristics of hybridized film.
Embodiment 5
The hybridized film of the present embodiment, in raw material, organic semiconducting materials adopts octaethylporphyrin cobalt, and the first solvent is m-dichlorobenzene; Inorganic nano material adopts graphene nano particle, and the second solvent is water.
Step one: octaethylporphyrin cobalt is dissolved in m-dichlorobenzene, the concentration forming octaethylporphyrin cobalt is first mixture of 5mg/mL; By graphene dispersion in ethanol, ultrasonic disperse is even, forms the second mixture that graphene dispersion concentration is 0.01mg/mL.
Step 2: adopt the method dripped to be transferred on inert substrate Si substrate, in low pressure (10 in described first mixture
-2pa), place 6 hours at 50 DEG C of temperature, after described m-dichlorobenzene volatilization, form octaethylporphyrin cobalt nanocrystal.
Step 3; The method of ink jet printing is adopted to be transferred to described octaethylporphyrin cobalt nanocrystal surface in described second mixture, then through 100 DEG C of thermal anneal process 10 minutes, after ethanol volatilization completely, obtain organic-inorganic material and form hybridized film, its appearance structure is similar to the hybridized film of embodiment 1.As can be seen from Figure 5, compare the current-voltage under light conditions, hybridized film is compared single octaethylporphyrin cobalt nanocrystal film and is had higher photoelectric current.
Those skilled in the art are known, and organic semiconducting materials solubility is in a solvent different, and has solubility limit.Therefore, certain crosslinking degree be obtained and cancellated organic semiconductor nanocrystalline needs considers the dissolution properties of different organic semiconductor in different solvents.By selecting the concentration of solvent of different nature and adjustment organic compound, size difference can be produced, crosslinking degree is different, performance is different organic semiconducting materials is nanocrystalline.Except the organic semiconducting materials mentioned by above-described embodiment, can also use naphthalimide or derivatives thereof, adjusting its concentration in the first mixture is 0.1 ~ 5mg/mL, also can form nano-crystal film, reach object of the present invention.
On this basis, the different hybrid organic-inorganic film of performance can be prepared by adjusting the kind of inorganic nano material, concentration and pattern.Such as, for making hybridized film have high conductivity, the nano particles such as metal oxide, sulfide, antimonide can be added on organic semiconductor is nanocrystalline; For making hybridized film have good light absorption, can add on organic semiconductor is nanocrystalline there is wide spectral metallic compound nano particle as titanium dioxide, zinc oxide etc. and the metal nanoparticle such as gold, silver, platinum; For making hybridized film have good transport efficiency, the nano particle of the high mobility such as Graphene, carbon nano-tube can be added on organic semiconductor is nanocrystalline.The pattern of inorganic nano material can be nano particle, nanosphere, nanometer rods, nanotube, nano wire etc. one or more.
Claims (13)
1. a preparation method for hybridized film, is characterized in that, comprises the steps:
Step one: be dissolved in by organic semiconducting materials in the first solvent, forms the first mixture that concentration is 0.01 ~ 20mg/mL; Inorganic nano material is distributed in the second solvent, forms the second mixture that dispersion concentration is 0.01 ~ 10mg/mL;
Step 2: be transferred in inert substrate by described first mixture, leaves standstill, after described first solvent evaporates, forms organic semiconductor nano;
Step 3; Described second mixture is transferred to described organic semiconductor nanocrystal surface, then carries out annealing in process, after described second solvent evaporates, obtain organic-inorganic material and form hybridized film.
2. the preparation method of hybridized film according to claim 1, it is characterized in that, described organic semiconducting materials is the one in metal phthalocyanine compound, metal porphyrins, perylene diimide or derivatives thereof, naphthalimide or derivatives thereof, thiophene or derivatives thereof.
3. the preparation method of hybridized film according to claim 2, it is characterized in that, described metal phthalocyanine compound or the concentration of metal porphyrins in the first mixture are saturated concentration.
4. the preparation method of hybridized film according to claim 2, it is characterized in that, the concentration of Suo Shu perylene diimide or derivatives thereof in the first mixture is 0.1 ~ 5mg/mL.
5. the preparation method of hybridized film according to claim 2, it is characterized in that, the concentration of described naphthalimide or derivatives thereof in the first mixture is 0.1 ~ 5mg/mL.
6. the preparation method of hybridized film according to claim 2, it is characterized in that, the concentration of described thiophene or derivatives thereof in the first mixture is 0.2 ~ 20mg/mL.
7. the preparation method of hybridized film according to claim 1, it is characterized in that, in described second mixture, inorganic nano material dispersion concentration is 0.01 ~ 0.5mg/mL.
8. the preparation method of hybridized film according to claim 1 or 7, it is characterized in that, described inorganic nano material is the one in metal nanoparticle, carbon nanomaterial, metal oxide, metal sulfide, metal selenide or metal telluride.
9. the preparation method of hybridized film according to claim 1, it is characterized in that, described annealing in process comprises: carry out in annealing way in normal temperature, heating, low pressure, atmosphere of inert gases or in solvent vapo(u)r one or more.
10. the preparation method of hybridized film according to claim 1 or 9, it is characterized in that, the temperature of described annealing in process is 80 ~ 120 DEG C, and the processing time is 10 ~ 30 minutes.
The preparation method of 11. hybridized film according to claim 1, it is characterized in that, the transfer method of described first mixture and/or the second mixture comprises the one in spin coating, dropping, immersion, roller coat, Electrospun, aerosol spray printing, ink jet printing, intaglio printing or silk screen printing.
The preparation method of 12. hybridized film according to claim 2, it is characterized in that, the first described solvent comprises at least one in chloroform, carrene, chlorobenzene, meta-xylene, ortho-xylene, paraxylene, paracide, m-dichlorobenzene or o-dichlorohenzene.
13. according to claim 2 or 7 preparation method of hybridized film, it is characterized in that, the second described solvent comprises water or alcohol.
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