CN104701437A - Three-dimensional LED luminescent device - Google Patents
Three-dimensional LED luminescent device Download PDFInfo
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- CN104701437A CN104701437A CN201510102013.4A CN201510102013A CN104701437A CN 104701437 A CN104701437 A CN 104701437A CN 201510102013 A CN201510102013 A CN 201510102013A CN 104701437 A CN104701437 A CN 104701437A
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Abstract
The invention relates to a three-dimensional LED luminescent device and belongs to the field of a light emitting diode. The three-dimensional LED luminescent device comprises an LED chip and a radiating substrate, a p type ohmic contact electrode and an n type ohmic contact electrode are arranged on the LED chip; a plurality of electric conduction and heat conduction through holes are formed in the radiating substrate, an insulating layer, a seed layer and an electric conduction and heat conduction metal hole core are deposited on an inner wall of the electric conduction and heat conduction through hole in sequence; the p type ohmic contact electrode is welded to the electric conduction and heat conduction metal hole core. The three-dimensional LED luminescent device has the advantages that the volume of the LED luminescent device is reduced, the luminous efficiency and the heat dispersion are enhanced for the LED luminescent device, and reliability of the LED luminescent device is improved.
Description
Technical field
The present invention relates to a kind of three-dimensional LED luminescent device, belong to light-emitting diode field.
Background technology
The electrical power of about 30% can be converted to luminous power by LED, and the electrical power of remaining 70% is converted to heat energy, and therefore, the heat dispersion strengthening LED is most important to the Performance And Reliability improving LED.In applications such as auto bulb, stage lighting and projecting apparatus, need the LED light source of high strength.Luminous intensity and the luminous flux of LED can be increased by the increase drive current of LED and the size of LED.But along with the increase of LED chip size, Injection Current is evenly expanded and is become more difficult in LED chip, dispels the heat also more difficult.The heat dispersion how improving large scale power-type three-dimensional LED chip becomes focus and the difficult point of light-emitting diode area research.
Summary of the invention
The object of the present invention is to provide a kind of three-dimensional LED luminescent device, this three-dimensional LED luminescent device be LED chip is welded on there is conduction, heat conduction through hole heat-radiating substrate material on, by the three-dimensional interconnection being embedded in conduction in heat-radiating substrate material, heat conduction through hole realizes LED and external environment condition, reduce the volume of LED, strengthen LED heat dispersion, thus improve luminous efficiency and the reliability of LED.
The present invention adopts following technical scheme to realize above-mentioned purpose:
A kind of three-dimensional LED luminescent device, comprise LED chip and heat-radiating substrate, described LED chip is provided with p-type Ohm contact electrode and N-shaped Ohm contact electrode; Described heat-radiating substrate is provided with several conductive and heat-conductive through holes, conductive and heat-conductive through-hole wall deposits successively insulating barrier, Seed Layer and conductive and heat-conductive metal aperture core; Described p-type Ohm contact electrode is welded on conductive and heat-conductive metal aperture core.
Described N-shaped Ohm contact electrode is welded on conductive and heat-conductive metal aperture core; Described conductive and heat-conductive metal aperture core comprises upper, middle and lower, and the diameter on described top is greater than conductive and heat-conductive through hole, and the diameter of described bottom is greater than the diameter of conductive and heat-conductive through hole.
The described Au-Ni-Sn eutectic that is welded as welds or metal lead wire welding.
Described LED chip comprises GaN or AlGaN layer, GaN or the AlGaN semiconductor layer of N-shaped doping, multiple quantum well light emitting layer, GaN or the AlGaN semiconductor layer of p-type doping, transparency conducting layer and reflector from top to bottom successively; Described reflector is provided with runs through reflector, transparency conducting layer, GaN or the AlGaN semiconductor layer of p-type doping and multiple quantum well light emitting layer, and cecum is positioned at the blind hole of GaN or AlGaN semiconductor layer of N-shaped doping; The madial wall of described blind hole is provided with insulating barrier, described reflector is divided and offers highly identical embedded N-shaped Ohm contact electrode and p-type Ohm contact electrode, embedded N-shaped Ohm contact electrode comprises the N-shaped Ohm contact electrode post for filling blind hole on embedded N-shaped ohmic electrode layer and embedded N-shaped ohmic electrode layer; Insulating barrier is provided with between described N-shaped ohmic electrode layer and reflector.
Described transparency conducting layer is the indium tin oxide layer/wire screen compartment/indium tin oxide layer composite bed be made up of indium tin oxide layer, wire screen compartment, indium tin oxide layer; The material of described insulating barrier is SiO
2, Si
3n
4, AlN or Al
2o
3.
The material of described wire screen compartment is Al, Ag, Au or Cu.
Described blind hole is periodicity or non-periodic distribution.
The preparation method of above-mentioned three-dimensional LED luminescent device, comprises the steps:
(1) GaN or the AlGaN semiconductor layer of GaN or the AlGaN semiconductor layer of growing GaN or AlN resilient coating, N-shaped doping successively on a sapphire substrate, multiple quantum well layer and p-type doping;
(2) on GaN or the AlGaN semiconductor layer of p-type doping, transparency conducting layer is prepared; Sputtering mode is adopted to prepare reflector over transparent conductive layer;
(3) photoetching, dry etching method or wet etching method is adopted to carry out micro Process to GaN or the AlGaN semiconductor layer that reflector, transparency conducting layer, GaN or the AlGaN semiconductor layer of p-type doping, Multiple Quantum Well (MQW) layer, N-shaped adulterate, preparation runs through reflector, transparency conducting layer, GaN or the AlGaN semiconductor layer of p-type doping and multiple quantum well layer, and cecum is positioned at the blind hole of GaN or AlGaN semiconductor layer of N-shaped doping;
(4) using plasma strengthen chemical gaseous phase sink method in blind hole and reflector on depositing insulating layer; Adopt photoetching and dry etching method or wet etching method to remove the insulating barrier of blind via bottom, retain the insulating barrier of blind hole sidewall, obtain the blind hole that deposited on sidewalls has insulating barrier;
(5) adopt sputtering, evaporation or galvanoplastic to have in the blind hole of insulating barrier and on top at deposited on sidewalls and prepare N-shaped metal ohmic contact electrode column and N-shaped metal ohmic contact electrode layer, reflector is prepared p-type metal ohmic contact electrode, obtains LED chip;
(6) in heat-radiating substrate material, prepare through hole, depositing insulating layer and Seed Layer on through-hole side wall, in through-holes filled conductive Heat Conduction Material, form conductive and heat-conductive metal aperture core;
(7) by LED chip face-down bonding on the conductive and heat-conductive metal aperture core of heat-radiating substrate, obtain three-dimensional LED luminescent device.
Described LED chip comprises GaN or the AlGaN semiconductor layer of Sapphire Substrate, GaN or AlGaN layer and N-shaped doping from bottom to up successively; GaN or the AlGaN semiconductor layer of described N-shaped doping divides and offers N-shaped Ohm contact electrode and multiple quantum well light emitting layer, multiple quantum well light emitting layer is provided with successively GaN or the AlGaN semiconductor layer of p-type doping, transparency conducting layer and p-type Ohm contact electrode.
Described LED chip comprises N-shaped Ohm contact electrode, GaN or AlGaN layer, GaN or the AlGaN semiconductor layer of N-shaped doping, multiple quantum well light emitting layer, GaN or the AlGaN semiconductor layer of p-type doping, transparency conducting layer, reflector and p-type Ohm contact electrode from top to bottom successively.
Its preparation method is: grow successively in Sapphire Substrate 11 unadulterated GaN or AlN resilient coating 12, N-shaped doping GaN or AlGaN semiconductor material 13, Multiple Quantum Well (MQW) 14, p-type doping GaN or AlGaN semi-conducting material 15; GaN or the AlGaN semi-conducting material 15 of p-type doping forms transparency conducting layer 21, and this transparency conducting layer is transparency conducting layer is ITO/ wire mesh grid/ITO tri-layers of composite film material; Sputtering mode is adopted to form reflector 31 on transparency conducting layer 21; GaN or the AlGaN semiconductor material 13 of GaN or the AlGaN semi-conducting material 15 adopting the method for photoetching and dry etching or wet etching to adulterate to reflector 31, transparency conducting layer 21, p-type, Multiple Quantum Well (MQW) 14, N-shaped doping carry out micro Process, thus form the pore space structure of periodic distribution or non-periodic distribution, these pore space structures run through gallium nitride or aluminum gallium nitride semi-conducting material 15, the Multiple Quantum Well (MQW) 14 of p-type doping, and form blind hole in the gallium nitride or aluminum gallium nitride semi-conducting material 13 of N-shaped doping.Then, by chemical vapour deposition (CVD) (PECVD) method of plasma enhancing at hole inner and around formation insulating barrier 41, this insulating barrier 41 material is SiO
2, Si
3n
4or AlN; Adopt the method for photoetching and dry etching or wet etching to process insulating barrier 41, remove the insulating barrier bottom hole, only retain the insulating barrier of hole sidewalls; Adopt sputtering, the mode of evaporation or plating forms N-shaped metal ohmic contact electrode 51 in hole; Reflector 31 is formed p-type metal ohmic contact electrode 61; Embedded N-shaped metal ohmic contact electrode 51 and p-type metal ohmic contact electrode 61 form flip LED chips; P-electrode 71 and n-electrode 72 are positioned at the homonymy of LED chip, form horizontal structure LED chip; Conductive substrates 81 is as the p-electrode of light emitting diode (LED) chip with vertical structure, and n-electrode 82 is positioned at the top of light emitting diode (LED) chip with vertical structure; In heat-radiating substrate material, form through-hole structure, in through-hole side wall depositing insulating layer 101, Seed Layer 110, filled conductive, thermal conductive metallic material 121 in through-holes, thus in heat-radiating substrate formed conduction, heat conduction through hole; Flip LED chips be welded on there is conduction, heat conduction through hole heat-radiating substrate on, by the three-dimensional interconnection being distributed in conduction in heat-radiating substrate material, heat conduction through hole 121 realizes LED and external electrical circuit; The p-electrode of horizontal structure LED chip and n-electrode be welded on by conductive metal wire 141 there is conduction, heat conduction through hole heat-radiating substrate on, by the three-dimensional interconnection being distributed in conduction in heat-radiating substrate material, heat conduction through hole realizes horizontal structure LED and external electrical circuit; The conductive substrates of light emitting diode (LED) chip with vertical structure is welded on the heat-radiating substrate with conduction, heat conduction through hole, by the three-dimensional interconnection being distributed in conduction in heat-radiating substrate material, heat conduction through hole realizes vertical structure LED luminescent device and external electrical circuit.
The present invention relates to a kind of three-dimensional LED luminescent device, by LED is welded on there is conduction, heat conduction through hole heat-radiating substrate material on, by the three-dimensional interconnection being embedded in conduction in heat-radiating substrate material, heat conduction through hole realizes LED and external electrical circuit, reduce the volume of LED, the luminous efficiency strengthening LED and heat dispersion, improve the reliability of LED.
A kind of three-dimensional LED luminescent device, primary structure comprises: Sapphire Substrate, gallium nitride (GaN) or aluminium nitride (AlN) resilient coating, the gallium nitride (GaN) of N-shaped doping or aluminum gallium nitride (AlGaN) semi-conducting material, Multiple Quantum Well (MQW), the gallium nitride (GaN) of p-type doping or aluminum gallium nitride (AlGaN) semi-conducting material, transparency conducting layer, reflector, the pore space structure of periodicity or non-periodic distribution, be formed at the insulating barrier of hole sidewalls, fill the embedded N-shaped metal ohmic contact electrode of hole, be formed at the p-type metal ohmic contact electrode at top, reflector, there is conduction, the heat-radiating substrate material of heat conduction through-hole structure, LED chip is welded on heat-radiating substrate, by being distributed in heat-radiating substrate by being distributed in the conduction in heat-radiating substrate material, the three-dimensional interconnection of the real LED of heat conduction through hole and external electrical circuit.
The gallium nitride (GaN) that transparency conducting layer and p-type are adulterated or aluminum gallium nitride (AlGaN) semi-conducting material form ohmic contact, and this transparency conducting layer is made up of indium tin oxide (ITO)/wire mesh grid/indium tin oxide (ITO) three layers of composite film material.
Wire mesh grid is clipped in the centre of two-layer ITO material.
Wire screen grid material is the conducting metals such as Al, Ag, Au, Cu.
Adopt nanometer embossing on metallic film, form periodic wire screen lattice structure, by regulating cycle of wire mesh grid, height and duty ratio can the light transmittance of control ITO/ wire mesh grid/ITO tri-layers of composite film material and surface resistance.
On heat-conducting substrate, through hole is formed, then in through-hole side wall depositing insulating layer, Seed Layer, finally by electroplated conductive metal material filling vias by dry etch process.
Insulating layer material is SiO
2, Si
3n
4, AlN, Al
2o
3.
These conductions, heat conduction through hole run through top and the bottom of heat-radiating substrate material, can carry out three-dimensional interconnection to the conducting wire being positioned at heat-radiating substrate top and bottom.
LED chip is welded by Au-Ni-Sn eutectic or metal lead wire is welded on the conduction of heat-radiating substrate, heat conduction through hole, realizes the three-dimensional interconnection with external electrical circuit by conduction, heat conduction through hole.
The present invention relates to a kind of three-dimensional LED luminescent device, by LED is welded on there is conduction, heat conduction through hole heat-radiating substrate material on, by the three-dimensional interconnection being embedded in conduction in heat-radiating substrate material, heat conduction through hole realizes LED and external environment condition, reduce the volume of LED, the luminous efficiency strengthening LED and heat dispersion, improve the reliability of LED.
The present invention can improve the current expansion performance of the large scale power-type LED luminescent device under large driven current density condition, heat dispersion, thus strengthens luminous efficiency and the reliability of LED component.
Accompanying drawing explanation
Fig. 1 be Sapphire Substrate grown successively GaN layer, N-shaped doping GaN layer, multiple quantum well layer and p-type doping GaN layer after structural representation;
Fig. 2 has prepared the structural representation of transparency conducting layer on the GaN layer of p-type doping;
Fig. 3 has prepared the structural representation in reflector over transparent conductive layer;
Fig. 4 is in blind hole and blind hole is filled the schematic diagram of insulating barrier;
Fig. 5 is the schematic diagram having prepared embedded N-shaped Ohm contact electrode in blind hole;
Fig. 6 for have prepared p-type Ohm contact electrode schematic diagram on reflector;
Fig. 7 is the schematic diagram of horizontal structure LED chip in embodiment 2;
Fig. 8 is the schematic diagram of light emitting diode (LED) chip with vertical structure in embodiment 3;
Fig. 9 is the schematic diagram of high heat conductance baseplate material;
Figure 10 forms the schematic diagram of through hole and the insulating barrier in through-hole side wall formation on high heat conductance substrate;
The schematic diagram of Figure 11 after high heat conductance substrate through-hole sidewall forms Seed Layer;
The schematic diagram of Figure 12 in high heat conductance substrate through-hole after filled conductive metal material;
Figure 13 LED chip face-down bonding, on high heat conductance baseplate material, realizes the schematic diagram with the three-dimensional interconnection of outside line by conduction, heat conduction through hole;
Figure 14 horizontal structure LED chip is welded on high heat conductance baseplate material, realizes the schematic diagram with the three-dimensional interconnection of outside line by conduction, heat conduction through hole;
Figure 15 light emitting diode (LED) chip with vertical structure is welded on conduction, the heat conduction through hole of high heat conductance baseplate material, realizes the schematic diagram with the three-dimensional interconnection of outside line by conduction, heat conduction through hole.
Wherein, 11: saphire substrate material; 12: GaN or the AlGaN semiconductor layer of unadulterated GaN or AlN resilient coating 13:n type doping; 14: multiple quantum well light emitting layer; GaN or the AlGaN semiconductor layer of 15:p type doping; 21: transparency conducting layer; 31: speculum; 41: insulating barrier; 51:p type Ohm contact electrode; 61:n type Ohm contact electrode; 71: the p-type Ohm contact electrode of horizontal structure LED chip; 72: the N-shaped Ohm contact electrode of horizontal structure LED chip; 81: the conductive substrates of light emitting diode (LED) chip with vertical structure; 82: the N-shaped Ohm contact electrode of light emitting diode (LED) chip with vertical structure; 91: heat-radiating substrate material; 101: the insulating barrier being deposited on conduction, heat conduction through-hole side wall; 110: the Seed Layer being deposited on conduction, heat conduction through-hole side wall; 121: the metal aperture core of conductive and heat-conductive through hole; 122: the top of the metal aperture core of conductive and heat-conductive through hole; 123: the bottom of the metal aperture core of conductive and heat-conductive through hole; 124: the middle part of the metal aperture core of conductive and heat-conductive through hole; 141: conductive metal interconnect line.
Embodiment
Be further described below in conjunction with Fig. 1 to Figure 15 the present invention.
Embodiment 1
(1) grow successively in Sapphire Substrate 11 unadulterated GaN or AlN resilient coating 12, N-shaped doping GaN or AlGaN semiconductor material 13, Multiple Quantum Well (MQW) 14, p-type doping GaN or AlGaN semi-conducting material 15, as shown in Figure 1;
(2) on GaN or the AlGaN semi-conducting material 15 of p-type doping, transparency conducting layer 21 is formed, as shown in Figure 2; Adopt sputtering mode to form reflector 31 on transparency conducting layer 21, this reflector all has higher reflectivity to ultraviolet light and visible ray, as shown in Figure 3.
(3) GaN or the AlGaN semiconductor material 13 of GaN or the AlGaN semi-conducting material 15 adopting the method for photoetching and dry etching or wet etching to adulterate to reflector 31, transparency conducting layer 21, p-type, Multiple Quantum Well (MQW) 14, N-shaped doping carry out micro Process, form the pore space structure of periodic distribution or non-periodic distribution, these pore space structures run through gallium nitride or aluminum gallium nitride semi-conducting material 15, the Multiple Quantum Well (MQW) 14 of p-type doping, and blind hole is formed in the gallium nitride or aluminum gallium nitride semi-conducting material 13 of N-shaped doping, as shown in Figure 4.
(4) by the chemical gaseous phase depositing process of plasma enhancing at hole inner and around formation insulating barrier 41, the method of photoetching and dry etching or wet etching is adopted to process insulating barrier 41, remove the insulating barrier bottom hole, only retain the insulating barrier of hole sidewalls, as shown in Figure 5.
(5) adopt sputtering, the mode of evaporation or plating forms N-shaped metal ohmic contact electrode 51 in hole, reflector 31 forms p-type metal ohmic contact electrode 61, as shown in Figure 6.
(6) in heat-radiating substrate material, through hole is prepared, depositing insulating layer and Seed Layer on through-hole side wall, filled conductive Heat Conduction Material in through-holes, (described conductive and heat-conductive metal aperture core comprises upper, middle and lower to form conductive and heat-conductive metal aperture core, the diameter on described top is greater than conductive and heat-conductive through hole, the diameter of described bottom is greater than the diameter of conductive and heat-conductive through hole), as shown in Fig. 9-Figure 12;
(7) embedded N-shaped Ohm contact electrode and p-type Ohm contact electrode form face-down bonding on conductive and heat-conductive metal aperture core, obtain three-dimensional LED luminescent device.By the three-dimensional interconnection being distributed in conduction in heat-radiating substrate material, heat conduction through hole realizes LED and external electrical circuit, as shown in figure 13.
Prepared three-dimensional LED luminescent device, comprise LED chip and heat-radiating substrate, described LED chip is provided with p-type Ohm contact electrode and N-shaped Ohm contact electrode; Described heat-radiating substrate is provided with several conductive and heat-conductive through holes, conductive and heat-conductive through-hole wall deposits successively insulating barrier, Seed Layer and conductive and heat-conductive metal aperture core; Described p-type Ohm contact electrode and N-shaped Ohm contact electrode are welded on conductive and heat-conductive metal aperture core.
Described LED chip comprises GaN or AlGaN layer, GaN or the AlGaN semiconductor layer of N-shaped doping, multiple quantum well light emitting layer, GaN or the AlGaN semiconductor layer of p-type doping, transparency conducting layer and reflector from top to bottom successively; Described reflector is provided with runs through reflector, transparency conducting layer, GaN or the AlGaN semiconductor layer of p-type doping and multiple quantum well light emitting layer, and cecum is positioned at the blind hole of GaN or AlGaN semiconductor layer of N-shaped doping; The madial wall of described blind hole is provided with insulating barrier, described reflector is divided and offers highly identical embedded N-shaped Ohm contact electrode and p-type Ohm contact electrode, embedded N-shaped Ohm contact electrode comprises the N-shaped Ohm contact electrode post for filling blind hole on embedded N-shaped ohmic electrode layer and embedded N-shaped ohmic electrode layer; Insulating barrier is provided with between described N-shaped ohmic electrode layer and reflector.
Described transparency conducting layer is the composite bed be made up of indium tin oxide layer, wire screen compartment, indium tin oxide layer; The material of described insulating barrier is SiO
2, Si
3n
4, AlN or Al
2o
3.
The material of described wire screen compartment is Al, Ag, Au or Cu.
Described blind hole is periodicity or non-periodic distribution.
Embodiment 2
Three-dimensional LED luminescent device, comprises LED chip and heat-radiating substrate, and described LED chip is provided with p-type Ohm contact electrode and N-shaped Ohm contact electrode; Described heat-radiating substrate is provided with several conductive and heat-conductive through holes, conductive and heat-conductive through-hole wall deposits successively insulating barrier, Seed Layer and conductive and heat-conductive metal aperture core; Described p-type Ohm contact electrode and N-shaped Ohm contact electrode are welded on conductive and heat-conductive metal aperture core by metal lead wire.
Described LED chip (horizontal structure LED chip) comprises GaN or the AlGaN semiconductor layer of Sapphire Substrate, GaN or AlGaN layer and N-shaped doping from bottom to up successively; GaN or the AlGaN semiconductor layer of described N-shaped doping divides and offers N-shaped Ohm contact electrode and multiple quantum well light emitting layer, multiple quantum well light emitting layer is provided with successively GaN or the AlGaN semiconductor layer of p-type doping, transparency conducting layer and p-type Ohm contact electrode.P type Ohm contact electrode 71 and N-shaped Ohm contact electrode 72 are positioned at the homonymy of horizontal structure LED chip, as shown in Figure 7.
The p-electrode of horizontal structure LED chip and n-electrode be welded on by metal lead wire there is conduction, heat conduction through hole heat-radiating substrate on, by the three-dimensional interconnection being distributed in conduction in heat-radiating substrate material, heat conduction through hole realizes horizontal structure LED and external electrical circuit, as shown in figure 14.
Embodiment 3
Three-dimensional LED luminescent device, comprises LED chip and heat-radiating substrate, and described LED chip is provided with p-type Ohm contact electrode and N-shaped Ohm contact electrode; Described heat-radiating substrate is provided with several conductive and heat-conductive through holes, conductive and heat-conductive through-hole wall deposits successively insulating barrier, Seed Layer and conductive and heat-conductive metal aperture core; Described p-type Ohm contact electrode and N-shaped Ohm contact electrode are welded on conductive and heat-conductive metal aperture core by metal lead wire.
Described LED chip comprises N-shaped Ohm contact electrode, GaN or AlGaN layer, GaN or the AlGaN semiconductor layer of N-shaped doping, multiple quantum well light emitting layer, GaN or the AlGaN semiconductor layer of p-type doping, transparency conducting layer, reflector and p-type Ohm contact electrode from top to bottom successively.
Conductive substrates 81 is as the p-electrode of light emitting diode (LED) chip with vertical structure, and n-electrode 82 is positioned at the top of light emitting diode (LED) chip with vertical structure, as shown in Figure 8.
The conductive substrates of light emitting diode (LED) chip with vertical structure is welded on the heat-radiating substrate with conduction, heat conduction through hole, by the three-dimensional interconnection being distributed in conduction in heat-radiating substrate material, heat conduction through hole realizes vertical structure LED luminescent device and external electrical circuit, as shown in figure 15.
Claims (10)
1. a three-dimensional LED luminescent device, is characterized in that: comprise LED chip and heat-radiating substrate, and described LED chip is provided with p-type Ohm contact electrode and N-shaped Ohm contact electrode; Described heat-radiating substrate is provided with several conductive and heat-conductive through holes, conductive and heat-conductive through-hole wall deposits successively insulating barrier, Seed Layer and conductive and heat-conductive metal aperture core; Described p-type Ohm contact electrode is welded on conductive and heat-conductive metal aperture core.
2. a kind of three-dimensional LED luminescent device according to claim 1, is characterized in that: described N-shaped Ohm contact electrode is welded on conductive and heat-conductive metal aperture core; Described conductive and heat-conductive metal aperture core comprises upper, middle and lower, and the diameter on described top is greater than conductive and heat-conductive through hole, and the diameter of described bottom is greater than the diameter of conductive and heat-conductive through hole.
3. a kind of three-dimensional LED luminescent device according to claim 1, is characterized in that: described in be welded as the weldering of Au-Ni-Sn eutectic or metal lead wire welding.
4. a kind of three-dimensional LED luminescent device according to claim 1 or 2, is characterized in that: described LED chip comprises GaN or AlGaN layer, GaN or the AlGaN semiconductor layer of N-shaped doping, multiple quantum well light emitting layer, GaN or the AlGaN semiconductor layer of p-type doping, transparency conducting layer and reflector from top to bottom successively; Described reflector is provided with runs through reflector, transparency conducting layer, GaN or the AlGaN semiconductor layer of p-type doping and multiple quantum well light emitting layer, and cecum is positioned at the blind hole of GaN or AlGaN semiconductor layer of N-shaped doping; The madial wall of described blind hole is provided with insulating barrier, described reflector is divided and offers highly identical embedded N-shaped Ohm contact electrode and p-type Ohm contact electrode, embedded N-shaped Ohm contact electrode comprises the N-shaped Ohm contact electrode post for filling blind hole on embedded N-shaped ohmic electrode layer and embedded N-shaped ohmic electrode layer; Insulating barrier is provided with between described N-shaped ohmic electrode layer and reflector.
5. a kind of three-dimensional LED luminescent device according to claim 4, is characterized in that: described transparency conducting layer is the indium tin oxide layer/wire screen compartment/indium tin oxide layer composite bed be made up of indium tin oxide layer, wire screen compartment, indium tin oxide layer; The material of described insulating barrier is SiO
2, Si
3n
4, AlN or Al
2o
3.
6. a kind of three-dimensional LED luminescent device according to claim 5, is characterized in that: the material of described wire screen compartment is Al, Ag, Au or Cu.
7. a kind of three-dimensional LED luminescent device according to claim 4, is characterized in that: described blind hole is for periodically or non-periodic distribution.
8. a kind of three-dimensional LED luminescent device according to claim 1 or 2, is characterized in that: described LED chip comprises GaN or the AlGaN semiconductor layer of Sapphire Substrate, GaN or AlGaN layer and N-shaped doping from bottom to up successively; GaN or the AlGaN semiconductor layer of described N-shaped doping divides and offers N-shaped Ohm contact electrode and multiple quantum well light emitting layer, multiple quantum well light emitting layer is provided with successively GaN or the AlGaN semiconductor layer of p-type doping, transparency conducting layer and p-type Ohm contact electrode.
9. a kind of three-dimensional LED luminescent device according to claim 1 or 2, is characterized in that: described LED chip comprises N-shaped Ohm contact electrode, GaN or AlGaN layer, GaN or the AlGaN semiconductor layer of N-shaped doping, multiple quantum well light emitting layer, GaN or the AlGaN semiconductor layer of p-type doping, transparency conducting layer, reflector and p-type Ohm contact electrode from top to bottom successively.
10. prepare a method for a kind of three-dimensional LED luminescent device described in claim 1 or any one of 5-7, it is characterized in that comprising the steps:
(1) GaN or the AlGaN semiconductor layer of GaN or the AlGaN semiconductor layer of growing GaN or AlN resilient coating, N-shaped doping successively on a sapphire substrate, multiple quantum well layer and p-type doping;
(2) on GaN or the AlGaN semiconductor layer of p-type doping, transparency conducting layer is prepared; Sputtering mode is adopted to prepare reflector over transparent conductive layer;
(3) photoetching, dry etching method or wet etching method is adopted to carry out micro Process to GaN or the AlGaN semiconductor layer that reflector, transparency conducting layer, GaN or the AlGaN semiconductor layer of p-type doping, Multiple Quantum Well (MQW) layer, N-shaped adulterate, preparation runs through reflector, transparency conducting layer, GaN or the AlGaN semiconductor layer of p-type doping and multiple quantum well layer, and cecum is positioned at the blind hole of GaN or AlGaN semiconductor layer of N-shaped doping;
(4) using plasma strengthen chemical gaseous phase sink method in blind hole and reflector on depositing insulating layer; Adopt photoetching and dry etching method or wet etching method to remove the insulating barrier of blind via bottom, retain the insulating barrier of blind hole sidewall, obtain the blind hole that deposited on sidewalls has insulating barrier;
(5) adopt sputtering, evaporation or galvanoplastic to have in the blind hole of insulating barrier and on top at deposited on sidewalls and prepare N-shaped metal ohmic contact electrode column and N-shaped metal ohmic contact electrode layer, reflector is prepared p-type metal ohmic contact electrode, obtains LED chip;
(6) in heat-radiating substrate material, prepare through hole, depositing insulating layer and Seed Layer on through-hole side wall, in through-holes filled conductive Heat Conduction Material, form conductive and heat-conductive metal aperture core;
(7) by LED chip face-down bonding on the conductive and heat-conductive metal aperture core of heat-radiating substrate, obtain three-dimensional LED luminescent device.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106328636A (en) * | 2016-10-12 | 2017-01-11 | 聚灿光电科技股份有限公司 | Integrated LED device and preparing method thereof |
| CN108281532A (en) * | 2018-01-25 | 2018-07-13 | 扬州乾照光电有限公司 | A kind of flexible LED chip and preparation method thereof, packaging method |
| CN113594324A (en) * | 2021-06-11 | 2021-11-02 | 河源市众拓光电科技有限公司 | Electrode coplanar LED substrate and preparation method thereof |
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| CN113594324A (en) * | 2021-06-11 | 2021-11-02 | 河源市众拓光电科技有限公司 | Electrode coplanar LED substrate and preparation method thereof |
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