CN104697637B - 一种薄膜生长的实时测温方法 - Google Patents
一种薄膜生长的实时测温方法 Download PDFInfo
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- CN104697637B CN104697637B CN201310655561.0A CN201310655561A CN104697637B CN 104697637 B CN104697637 B CN 104697637B CN 201310655561 A CN201310655561 A CN 201310655561A CN 104697637 B CN104697637 B CN 104697637B
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000009529 body temperature measurement Methods 0.000 title claims abstract description 24
- 230000005855 radiation Effects 0.000 claims abstract description 68
- 230000004044 response Effects 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims abstract 11
- 239000010409 thin film Substances 0.000 claims abstract 2
- 230000003287 optical effect Effects 0.000 claims description 22
- 238000005316 response function Methods 0.000 claims description 14
- 238000002834 transmittance Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 238000001228 spectrum Methods 0.000 claims description 4
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 claims description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000009977 dual effect Effects 0.000 abstract 2
- 238000001514 detection method Methods 0.000 description 5
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- 235000008434 ginseng Nutrition 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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- 238000012937 correction Methods 0.000 description 1
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- 238000004861 thermometry Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
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CN201310655561.0A CN104697637B (zh) | 2013-12-06 | 2013-12-06 | 一种薄膜生长的实时测温方法 |
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CN104697637A CN104697637A (zh) | 2015-06-10 |
CN104697637B true CN104697637B (zh) | 2018-12-07 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109238510B (zh) * | 2018-10-25 | 2020-06-05 | 上海新昇半导体科技有限公司 | 一种校准外延腔温度的方法 |
CN111948177A (zh) * | 2020-07-30 | 2020-11-17 | 季华实验室 | 一种碳化硅外延设备原位监测***及监测方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101144742A (zh) * | 2006-09-13 | 2008-03-19 | 中国科学院沈阳自动化研究所 | 金属粉末激光成形过程中温度场检测方法及其***装置 |
CN102865930A (zh) * | 2012-10-09 | 2013-01-09 | 中北大学 | 基于比色法的镁及镁合金燃点温度的测试装置及使用方法 |
CN102889934A (zh) * | 2011-07-18 | 2013-01-23 | 甘志银 | 实时测量温度的方法 |
CN103411684A (zh) * | 2013-07-17 | 2013-11-27 | 中微半导体设备(上海)有限公司 | 测量反应腔室内薄膜温度的方法 |
CN104697666A (zh) * | 2013-12-06 | 2015-06-10 | 北京智朗芯光科技有限公司 | 一种mocvd反应腔测温方法 |
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- 2013-12-06 CN CN201310655561.0A patent/CN104697637B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101144742A (zh) * | 2006-09-13 | 2008-03-19 | 中国科学院沈阳自动化研究所 | 金属粉末激光成形过程中温度场检测方法及其***装置 |
CN102889934A (zh) * | 2011-07-18 | 2013-01-23 | 甘志银 | 实时测量温度的方法 |
CN102865930A (zh) * | 2012-10-09 | 2013-01-09 | 中北大学 | 基于比色法的镁及镁合金燃点温度的测试装置及使用方法 |
CN103411684A (zh) * | 2013-07-17 | 2013-11-27 | 中微半导体设备(上海)有限公司 | 测量反应腔室内薄膜温度的方法 |
CN104697666A (zh) * | 2013-12-06 | 2015-06-10 | 北京智朗芯光科技有限公司 | 一种mocvd反应腔测温方法 |
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Address after: 102206 Beijing City, Changping District Changping Road No. 97 Xinyuan Science Park B building room 503 Applicant after: BEI OPTICS TECHNOLOGY Co.,Ltd. Address before: 100191, Beijing, Zhichun Road, Haidian District No. 27 quantum core 402 room Applicant before: BEI OPTICS TECHNOLOGY Co.,Ltd. |
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Inventor after: Ma Tiezhong Inventor after: Yan Dong Inventor after: Wang Linzi Inventor after: Liu Jianpeng Inventor after: Jiao Hongda Inventor before: Li Chengmin Inventor before: Yan Dong Inventor before: Wang Linzi Inventor before: Liu Jianpeng Inventor before: Jiao Hongda Inventor before: Zhang Tang Inventor before: Ma Xiaochao |
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