CN104692668B - Rapid crystallization glass powder for positive electrode paste of solar cell - Google Patents
Rapid crystallization glass powder for positive electrode paste of solar cell Download PDFInfo
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- CN104692668B CN104692668B CN201510070453.6A CN201510070453A CN104692668B CN 104692668 B CN104692668 B CN 104692668B CN 201510070453 A CN201510070453 A CN 201510070453A CN 104692668 B CN104692668 B CN 104692668B
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- 239000011521 glass Substances 0.000 title claims abstract description 74
- 238000002425 crystallisation Methods 0.000 title claims abstract description 17
- 230000008025 crystallization Effects 0.000 title claims abstract description 17
- 239000000843 powder Substances 0.000 title abstract description 19
- 239000002003 electrode paste Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 13
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 13
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 13
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 9
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 9
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000000428 dust Substances 0.000 claims description 42
- 239000002002 slurry Substances 0.000 claims description 29
- QDOXWKRWXJOMAK-UHFFFAOYSA-N chromium(III) oxide Inorganic materials O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 18
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 17
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 13
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 claims description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 8
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 7
- 229910003069 TeO2 Inorganic materials 0.000 claims description 6
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 4
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 12
- 239000002667 nucleating agent Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 29
- 229910052709 silver Inorganic materials 0.000 description 21
- 239000004332 silver Substances 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 238000002360 preparation method Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 14
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 13
- 239000000126 substance Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 238000005245 sintering Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000011267 electrode slurry Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- YADSGOSSYOOKMP-UHFFFAOYSA-N lead dioxide Inorganic materials O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910018557 Si O Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000000498 ball milling Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000006258 conductive agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C12/00—Powdered glass; Bead compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Sustainable Energy (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Glass Compositions (AREA)
Abstract
The invention discloses rapid crystallization glass powder for positive electrode paste of a solar cell. The rapid crystallization glass powder comprises the following components in percentage by mass: 15%-55% of PbO, 10%-25% of PeO2, 5%-15% of B2O3, 7%-20% of Al2O3, 3%-15% of BaO, 6%-25% of P2O5, 4%-10% of Na2O, 3%-18% of SiO2 and 1%-25% of a nucleating agent. Through a method for adding partial nucleating agent to a traditional glass system, the performance of the glass powder can be effectively improved; and the transfer efficiency of the solar cell is obviously improved; and series resistance is reduced.
Description
Invention field
The present invention relates to a kind of front electrode of solar battery slurry fast crystallization type glass dust.
Technical background
Conventional silicon（Si）Based solar battery is through electric slurry silk screen by the silicon chip generated after pn-junction
It is sintered after printing and is prepared from.It is well known that the electric potential difference of pn-junction can be by by exterior source of energy in semiconductor device
To being separated, the movement in electronics and hole generates to external circuit the electric current for transmitting electric power to the hole-electron for exciting, therefore
The quality of electrode contact directly determines the performance of silica-based solar cell.
The formation of electrode contact is the process of complex interaction effect between electric slurry and silicon substrate, conventional electric slurry master
To be made up of conductive agent argentum powder, organic solvent, glass dust and other additives.It is generally acknowledged that glass dust exists in electric slurry component
Vital effect is served in the forming process of electrode.Glass dust is mainly obtained by which comprising leaded and other low-melting components
Obtain about 300 to 700 DEG C of softening point.In the sintering process of battery, lead and leaded material can be carried out with silicon nitride layer first
Reaction generates lead simple substance, and following lead simple substance generates argentalium alloy with argentum powder, with temperature cooled alloy split-phase, in silicon substrate surface
Sizeable silver crystalline substance is formed, electrical contact is consequently formed.Interface after whole process terminates can be by multiple phase compositions：Substrate silicon
On silver is brilliant, the silver precipitation in insulating glass layer and glassy layer, it is and block silver-colored after sinter.Therefore, contacting mechanism point
For two kinds of forms, silver is brilliant directly to form the penetration of electrons glassy layer that Ohmic contact and tunnel-effect cause with the block silver of sintering.Mesh
Before till the mechanism generally acknowledged bias toward the tunnel-effect of glassy layer, therefore the thickness of glassy layer that formed of silicon substrate surface is determined and is connect
Get an electric shock the height for hindering.
Conclusive effect, first glass dust are played in formation of the glass dust in solaode sintering process to emission electrode
Middle leaded thing is reacted with SiNx layer, and lead simple substance and the Argent grain of generation form argentalium alloy, in cooling procedure, argentalium alloy point
Phase, silver-colored crystals growth are deposited upon silicon substrate surface in silicon substrate surface, glass.If silver-colored crystalline substance size is larger, pn-junction may be pierced through, battery leakage
Electricity；When glassy layer is thicker, the brilliant electronics collected of silver cannot carry out effectively transmission by tunnel-effect causes battery series electrical
Resistance is too high, and battery efficiency declines.Silver-colored crystalline substance size is mainly relevant with argentum powder contact with the glass dust long-time for keeping soft state.When
Between long, the silver crystalline substance big impact battery efficiency of size, while glassy layer thickness can also become big, reduce the occurrence probability of tunnel-effect.
The content of the invention
It is an object of the invention to provide a kind of fast crystallization type glass dust, which can be during silicon solar cell be sintered
The thickness of glassy layer between the size and sintering silver bullion and silicon substrate of silver crystalline substance size is generated in control silicon substrate, promotes the contact to be formed
Optimization, lifts the efficiency of silicon solar cell, reduces production cost.
The present invention realizes that process is as follows：
A kind of front electrode of solar battery slurry glass dust, its component and weight percentage are：
15～55% 10～25%TeO of PbO25～15%B2O37～20%Al2O33～15%BaO 6～25%
P2O54～10%Na23～18%SiO of O2
And component Fe for being at least selected from one of following seven kinds of components that weight percentage is 1～25%2O3、Li2O、
Cr2O3、CaF2、ZnO、ZrO2、TiO2, preferred weight percentage is 1～15%.
A kind of front electrode of solar battery slurry glass dust, its component and weight percentage are：
15～55% 10～25%TeO of PbO25～15%B2O37～20%Al2O33～15%BaO 6～25%
P2O54～10%Na23～18%SiO of O2
And weight percentage be 5～15% at least selected from following seven kinds of components two component Fe2O3、Li2O、
Cr2O3、CaF2、ZnO、ZrO2、TiO2。
A kind of front electrode of solar battery slurry glass dust, its component and weight percentage are：
20～50% 15～25%TeO of PbO25～10%B2O37～15%Al2O35～10%BaO 6～15%
P2O55～10%Na25～15%SiO of O2
And component Fe for being at least selected from one of following seven kinds of components that weight percentage is 1～25%2O3、Li2O、
Cr2O3、CaF2、ZnO、ZrO2、TiO2, preferred weight percentage is 1～15%.
A kind of front electrode of solar battery slurry glass dust, its component and weight percentage are：15～55% PbO
10～25%TeO25～15%B2O37～20%Al2O33～15%BaO, 6～25%P2O5 4～10%Na2O 3～18%
SiO21～5% CaF2。
A kind of front electrode of solar battery slurry glass dust, its component and weight percentage are：15～55% PbO
10～25%TeO25～15%B2O37～20%Al2O33～15%BaO, 6～25%P2O5 4～10%Na2O 3～18%
SiO21～5% Fe2O3。
A kind of front electrode of solar battery slurry glass dust, its component and weight percentage are：15～55% PbO
10～25%TeO25～15%B2O37～20%Al2O33～15%BaO, 6～25%P2O5 4～10%Na2O 3～18%
SiO21～5% Cr2O3。
A kind of front electrode of solar battery slurry glass dust, its component and weight percentage are：15～55% PbO
10～25%TeO25～15%B2O37～20%Al2O33～15%BaO, 6～25%P2O5 4～10%Na2O 3～18%
SiO21～5% ZrO2。
A kind of preferred front electrode of solar battery slurry glass dust, its component and weight percentage are：37%
PbO、15%TeO2、8%B2O3、6%Al2O3、6%BaO、6%P2O5、6%Na2O、10%SiO2、3%Fe2O3、3%TiO2, or 37%PbO,
15%TeO2、8%B2O3、4.5%Al2O3、4.5%BaO、4.5%P2O5、4.5%Na2O、10%SiO2、3%Fe2O3、3%TiO2、3%Li2O、
3%Cr2O3, or 37%PbO, 15%TeO2、8%B2O3、2.25%Al2O3、2.25%BaO、2.25%P2O5、2.25%Na2O、10%SiO2、
3%Fe2O3、3%TiO2、3%Li2O、3%Cr2O3、3%ZnO、3%CaF2、3%ZrO2。
Preparing for glass dust can adopt conventional water quenching method, specific as follows, by required various components according to than
Example mix homogeneously is positioned in platinum alloy crucibles, is melted 10～30 minutes in 1000～1600 DEG C until forming equal in Muffle furnace
Phase molten mass, is then poured onto rapidly which in deionized water and obtains required glass blocks, and the glass blocks ball milling for obtaining is put down
Particle diameter is the glass powder of 0.5～4 m, the preparation dried, sieve for solar cell front side silver paste material.Can also adopt
Other modes carry out the synthesis of glass.For example, sol-gel process, spray pyrolysis method or other similar methods reach
Identical purpose.
With Pb-Te-B-Al-Ba-P-Na-Si-O as traditional glass system, addition on this basis can allow which to the present invention
It is nucleator that in cooling procedure, rapid crystallization is reduced with the related component of argentum powder time of contact, such as CaF2, Fe2O3, Cr2O3And
ZrO2, ZnO, TiO2, Li2O or other compound of nucleus etc. can be provided.The new type functional glass dust of preparation and Pb-
Knowable to Te-B-Al-Ba-P-Na-Si-O system glass dust is contrasted, have an advantage in that glass powder sintering goes out during cooling down
The now rapid crystallization centered on nucleus, causes freezing so as to prevent which to continue to give birth in the deposition of silicon substrate surface for glassy layer
It is long, while also having cut off the brilliant continued growth of silicon substrate surface silver, reach the dual mesh of control glassy layer thickness and silver crystalline substance size
's.Some silver precipitations that can not deposit to silicon substrate surface in time also can be frozen in glassy layer, increased the tunnel of glassy layer
Effect occurrence probability.Therefore the method by adding part nucleator in traditional glass system can be effectively improved glass dust
Performance, it will be apparent that improve solaode conversion efficiency reduce series resistance.
Description of the drawings
Fig. 1 is the solar battery sheet of the slurry for being printed with the preparation of glass I after removing grid line, glassy layer, silver crystalline substance
The silicon substrate surface pattern electron microscope for obtaining；
Fig. 2 is the electron microscope after the cell piece of the slurry for being printed with the preparation of glass III is processed；
Fig. 3 is the electron microscope after the cell piece of the slurry for being printed with the preparation of glass V is processed.
Specific embodiment
Embodiment 1 prepares glass dust I
Weigh 37%PbO, 15%TeO2、8%B2O3、7.5%Al2O3、7.5%BaO、7.5%P2O5、7.5%Na2O、10%SiO2Put
In platinum crucible, melt 10～30 minutes in 1000～1600 DEG C until the homogeneous molten mass of formation, then will in Muffle furnace
Which obtains required glass blocks in being poured onto rapidly deionized water, the glass blocks ball milling for obtaining is obtained mean diameter for 0.5～4 m
Glass powder, dry, sieve obtain traditional glass powder I for solar cell front side silver paste material preparation.
Embodiment 2 prepares glass dust II
Weigh 37%PbO, 15%TeO2、8%B2O3、6%Al2O3、6%BaO、6%P2O5、6%Na2O、10%SiO2Wherein add two
Plant nucleator 3%Fe2O3、3%TiO2Glass dust II is obtained using 1 identical preparation method of same embodiment is just being used for solaode
The preparation of face silver paste.
Embodiment 3 prepares glass dust III
Weigh 37%PbO, 15%TeO2、8%B2O3、4.5%Al2O3、4.5%BaO、4.5%P2O5、4.5%Na2O、10%SiO2Its
Four kinds of nucleator 3%Fe of middle addition2O3、3%TiO2、3%Li2O、3%Cr2O3Glass is obtained using 1 identical preparation method of same embodiment
Glass powder III is used for the preparation of solar cell front side silver paste material.
Embodiment 4 prepares glass dust IV
Weigh 37%PbO, 15%TeO2、8%B2O3、3.75%Al2O3、3.75%BaO、3.75%P2O5、3.75%Na2O、10%
SiO2Wherein add five kinds of nucleator 3%Fe2O3、3%TiO2、3%Li2O、3%Cr2O3, 3%ZnO is using 1 identical system of same embodiment
Preparation Method obtains glass dust IV for the preparation of solar cell front side silver paste material.
Embodiment 5 prepares glass dust V
Weigh 37%PbO, 15%TeO2、8%B2O3、2.25%Al2O3、2.25%BaO、2.25%P2O5、2.25%Na2O、10%
SiO2Wherein add seven kinds of nucleator 3%Fe2O3、3%TiO2、3%Li2O、3%Cr2O3、3%ZnO、3%CaF2, 3%ZrO2 is using with real
Apply 1 identical preparation method of example obtain glass dust V for solar cell front side silver paste material preparation.
The preparation of 6 front electrode slurry of embodiment and the test and comparison of battery parameter
The test of glass melting point adopts DTA or DSC/TG, and its melting temperature is within the scope of 320～760 DEG C.Solar energy
Battery front electrode slurry is mainly made up of following several compositions, the argentum powder as conductive phase, the glass dust as binding agent,
As the organic carrier and diluent that carry agent.As emphasis of the present invention is glass dust, as long as so argentum powder and organic carrier
Meet the present invention to be all properly.
In table 2, sequence number 1-5 represents embodiment 1-5.
Weigh appropriate organic carrier to be placed in rustless steel container, select different functional glass powder and argentum powder to carry out
Even mixing 10-15 minutes.Mixture is placed on three-roll grinder carries out repeat-rolling, and pressure is gradually increased to from 0
500psi.Gap between roller and roller is adjusted to 1 mil.Fineness of grind is adopted finally（FOG）Judge the quality of slurry, it is general next
Say for front electrode of solar battery silver paste FOG value is between 20/10.The regulation of last slurry viscosity needs to control diluent
Consumption, general control between 150～380Pas, thixotropic index be 4.0～8.0.It is of different nature for purposes of the invention
Frit is main component, and glass dust I～V is prepared five kinds of different types of electrode slurrys to carry out the right of battery efficiency
Than.
This five kinds of solar battery electrode slurries are printed on into the polysilicon of 156 × 156cm by way of silk screen printing
On cell piece, it is sintered on the infrared chain-type sintering furnace for setting parameter.Using ginseng of the business IV tester to cell piece
Number is measured, and IV testers can simulate the solar radiation under some strength.The data obtained is electric current I and voltage V, therefore
I-V curve is drawn out, battery efficiency is calculated（EFF）, fill factor, curve factor（FF）, series resistance（Rs）And parallel resistance（Rsh）.
The sign of electrode microstructure adopts scanning electron microscope.
Embodiment 1 is implemented as a comparison, and the electric slurry with rapid crystallization glass dust is starched with traditional glass powder electronics
Material is contrasted, and projects the excellent of glass dust performance of the present invention.Also the component with different nucleation capabilities is carried out effectively simultaneously
Contrast, prepares the electrode slurry that solaode can be allowed to obtain optimum performance parameters.Table 1 presents matching somebody with somebody for each embodiment
Than table 2 is corresponding battery performance parameter.
From table, contrast is as can be seen that printed substantially excellent containing the battery parameter with rapid crystallization quality glass slurry material
Different from traditional glass slurry, after the lead oxide played a major role in glass dust is limited, tellurium dioxide, boron oxide content,
As the species and content of the nucleator of addition increase, the short circuit current and open-circuit voltage of battery increase therewith, while filling
Increasing for the factor also preferably serves the effect for extending battery life with declining for series resistance, and the reduction of string resistance is also more preferable
Illustrate battery in preferably define Ohmic contact, the thickness of glassy layer is reduced, occurrence probability increase of tunnel-effect etc..
It can also be seen that being printed with the cell piece of traditional glass slurry through removing grid line, glassy layer from Electronic Speculum Fig. 1
After silver-colored crystalline substance, the pit left in silicon substrate is substantially big and deep than with the vestige left by rapid crystallization glass paste, and
Larger silver crystalline substance size often pierces through pn-junction causes battery drain, reduces the correlation performance parameters of battery.From Electronic Speculum Fig. 2 and 3
In it can be seen that increasing with nucleation dosage and species, the pit of silicon substrate surface is gradually reduced, it can be concluded that in glass dust
Nucleator during sintering cooling emission electrode is formed inhibits the growth of silver-colored crystalline substance well, result in more preferable metal
Change and formed, reduce the generation of leaky.Functional glass material prepared by the present invention compensate for the correlation of traditional glass powder and lack
Fall into, improve the efficiency of solaode, greatly reduce the production cost of battery.
Claims (6)
1. a kind of front electrode of solar battery slurry fast crystallization type glass dust, it is characterised in that its component and weight hundred
Divide and than content be：15～55% PbO, 10～25%TeO2, 5～15%B2O3, 7～20%Al2O3, 3～15%BaO, 6～25%
P2O5, 4～10%Na2O, 3～18%SiO2, and the nucleator that weight percent content is 1～25%, the nucleator is at least
Including Fe2O3、Cr2O3And CaF2。
2. front electrode of solar battery slurry fast crystallization type glass dust according to claim 1, it is characterised in that
The nucleator also includes Li2O、ZnO、ZrO2And TiO2In at least one.
3. front electrode of solar battery slurry fast crystallization type glass dust according to claim 1, it is characterised in that
Wherein the weight percent content of PbO is 20～50%, TeO2Weight percent content be 15～25%, B2O3Weight percent
It is 5～10%, Al than content2O3Weight percent content for 7～15%, BaO weight percent content be 5～10%,
P2O5Weight percent content be 6～15%, Na2The weight percent content of O is 5～10%, SiO2Percentage by weight contain
Measure as 5～15%.
4. a kind of front electrode of solar battery slurry fast crystallization type glass dust, it is characterised in that its component and weight hundred
Divide and than content be：37%PbO、15%TeO2、8%B2O3、3.75%Al2O3、3.75%BaO、3.75%P2O5、3.75%Na2O、10%
SiO2、3%Fe2O3、3%TiO2、3%Li2O、3%Cr2O3And 3%ZnO.
5. a kind of front electrode of solar battery slurry fast crystallization type glass dust, it is characterised in that its component and weight hundred
Divide and than content be：37%PbO、15%TeO2、8%B2O3、4.5%Al2O3、4.5%BaO、4.5%P2O5、4.5%Na2O、10%SiO2、3%
Fe2O3、3%TiO2、3%Li2O and 3%Cr2O3。
6. a kind of front electrode of solar battery slurry fast crystallization type glass dust, it is characterised in that its component and weight hundred
Divide and than content be：37%PbO、15%TeO2、8%B2O3、2.25%Al2O3、2.25%BaO、2.25%P2O5、2.25%Na2O、10%
SiO2、3%Fe2O3、3%TiO2、3%Li2O、3%Cr2O3、3%ZnO、3%CaF2And 3%ZrO2。
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| CN106495496B (en) * | 2017-01-03 | 2019-05-07 | 四川东树新材料有限公司 | It is used to prepare the glass powder and preparation method of PERC silicon solar cell back face silver paste |
| WO2018201375A1 (en) * | 2017-05-04 | 2018-11-08 | 无锡帝科电子材料股份有限公司 | Glass powder used for fabricating photovoltaic cell electrode, paste composition comprising same, photovoltaic cell electrode, and photovoltaic cell |
| CN112585765B (en) * | 2019-07-30 | 2022-09-27 | 深圳市首骋新材料科技有限公司 | Conductive paste for semiconductor element, preparation method thereof and PERC solar cell |
| CN111548021A (en) * | 2020-05-04 | 2020-08-18 | 上海匡宇科技股份有限公司 | Mixed glass powder and conductive silver paste prepared from same |
| CN114550971B (en) * | 2022-02-22 | 2022-11-15 | 上海银浆科技有限公司 | Front conductive silver paste of silicon solar cell, preparation method of front conductive silver paste, silicon solar cell and front electrode for silicon solar cell |
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| JP5480448B2 (en) * | 2010-05-04 | 2014-04-23 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Thick film pastes containing lead-tellurium-lithium-oxides and their use in the manufacture of semiconductor devices |
| WO2013109583A2 (en) * | 2012-01-16 | 2013-07-25 | Ferro Corporation | Non fire-through aluminum conductor reflector paste for back surface passivated cells with laser fired contacts |
| US8969709B2 (en) * | 2012-08-30 | 2015-03-03 | E I Du Pont De Nemours And Company | Use of a conductive composition containing lead—tellurium-based oxide in the manufacture of semiconductor devices with lightly doped emitters |
| CN103915127B (en) * | 2013-01-03 | 2017-05-24 | 上海匡宇科技股份有限公司 | Front silver paste for high sheet resistance silicon-based solar cell and preparing method of front silver paste |
| CN104150777A (en) * | 2014-08-07 | 2014-11-19 | 贵阳晶华电子材料有限公司 | Tellurium-containing glass for solar positive electrode silver paste and preparation method of tellurium-containing glass |
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