CN104685408B

CN104685408B - Component isolation on Optical devices

Info

Publication number: CN104685408B
Application number: CN201380036800.2A
Authority: CN
Inventors: 钱伟; 冯大增; J.方; M.阿斯哈里
Original assignee: Kotura Inc
Current assignee: Mellanox Technologies Ltd
Priority date: 2012-05-09
Filing date: 2013-02-28
Publication date: 2018-06-22
Anticipated expiration: 2033-02-28
Also published as: US20130301979A1; US8989522B2; CN104685408A; WO2013169298A1

Abstract

The device is included in the active parts in substrate.Active parts is optical sensor and/or optical modulator.Active parts includes active medium, and active medium includes ridge and flat area.Ridge is upwardly extended from substrate and is positioned between flat area.Ridge is limited to a part for the waveguide in substrate.One or more isolated grooves each extend to the flat area of active medium and are spaced apart at least partly with the ridge of active medium.

Description

Component isolation on Optical devices

Technical field

The present invention relates to Optical devices and more particularly to the isolation of the optical component on Optical devices.

Background technology

A variety of Optical devices include active parts such as optical sensor or modulator.When electric field is applied in component waveguide When, these active parts usually guide optical signal to pass through component waveguide.Component waveguide can be partly by from flat area（slab region）The ridge upwardly extended limits.The performance of these components may be by other components present in the flat area Spuious optical signal existing adversely affect.Additionally or alternatively, when the thermal energy of other components on device passes through this When device advances to the component, these components may be adversely affected.As a result, it is often necessary to heat, be electrically and/or optically isolated These components and other components on same device.

Invention content

Optical devices include the active parts in substrate.Active parts is optical sensor and/or optical modulator.It is active Component includes active medium, and active medium includes ridge and flat area.Ridge upwardly extends from substrate and is positioned at flat area Between.Ridge defines a part for the waveguide in substrate.One or more isolated grooves each extend to the flat of active medium It is spaced apart in plate region and with ridge at least partly.

The invention discloses a kind of method for forming Optical devices, Optical devices include serving as optical sensor and/or modulation The active parts of device.This method includes：On device executive device waveguide etch, the device in substrate have light transmission medium/ Light transmission medium.Device waveguide is etched in device for limiting waveguide in light transmission medium.This method further includes：Enforcement division on the apparatus Part waveguide etches.Component waveguide is etched in restriction component waveguide on the device.Device waveguide and component waveguide are aligned to become The different piece of common waveguide, wherein, device waveguide portion exchanges optical signal with component waveguide portion.This method further includes： Isolated groove is formed on the device and so that each isolated groove extends in the flat area of active medium and at least partly It is spaced apart with ridge.One or more isolated grooves are the one or more etched by being selected from device waveguide etching and component waveguide It etches and is completely or partially formed.

In some cases, one or more of isolated groove and waveguide are together defined at least the one of active parts The periphery that part surrounds.In one example, one or more of isolated groove and waveguide are together defined active medium The periphery that surrounds of at least part.

Description of the drawings

Figure 1A to Fig. 1 G shows Optical devices, and Optical devices have active parts, and active parts is configured to act as adjusting Device and/or optical sensor processed.Figure 1A is the perspective view of device.

Figure 1B shows the top view of the part of the Optical devices shown in figure 1A including optical modulator.

Fig. 1 C are the sectional view of Figure 1B shown devices that is intercepted along the line labeled as C.

Sectional views of Fig. 1 D for Optical devices shown in Figure 1B for being intercepted along the line labeled as D.

Sectional views of Fig. 1 E for Optical devices shown in Figure 1B for being intercepted along the line labeled as E.

Sectional views of Fig. 1 F for Optical devices shown in Figure 1B for being intercepted along the line labeled as F.

Sectional views of Fig. 1 G for Optical devices shown in Figure 1B for being intercepted along the line labeled as G.

Fig. 2 is the sectional view of an embodiment of the alternate embodiment of active parts and can represent along labeled as G's The section of device shown in Figure 1B that line is intercepted.

Fig. 3 is the sectional view of an embodiment of the alternate embodiment of active parts and can represent along labeled as G's The section of the device shown in Figure 1B that line is intercepted.

Fig. 4 A to Fig. 4 P show the method for manufacturing the active parts with isolated groove.

Fig. 5 A to Fig. 5 L are shown in which that will supplement etching is introduced into the method for Fig. 4 A to Fig. 4 P to form Figure 1B institutes The method of recess portion 25 shown.

Fig. 6 A to Fig. 6 I show the method that isolated groove causes wall to limit isolated groove side that is used to form.

Specific embodiment

The invention discloses a kind of Optical devices, the Optical devices include being positioned at common waveguide in substrate and active Component.Active parts is used as optical sensor and/or optical modulator.Active parts includes active medium, and active medium offer has The optical sensor and/or optical modulator of desired function.Common waveguide guiding optical signal passes through the device.One of common waveguide It is divided into the device waveguide being formed in light transmission medium.Another part of common waveguide is component waveguide, and component waveguide guiding light is believed Number pass through the active medium in active parts.

The device includes the isolated groove for extending in active medium or extending through active medium.In some cases, Isolated groove is arranged such that common waveguide and the periphery that isolated groove restriction surrounds a part for active parts.At certain In the case of a little, isolated groove limits the periphery for surrounding active parts together with common waveguide.Due to isolated groove extend to it is active It in medium or extends through active medium and active parts can be surrounded, they prevent or mitigate spuious optical signal from the dress The other regions put are entered in active parts.As a supplement or as an alternative, isolated groove prevent or mitigate spuious thermal energy and/ Or spuious electric energy is entered in active parts.As a supplement or as an alternative, in some cases, desired by active parts generation Heat and/or one or more heaters including being used to generating heat.Isolated groove can prevent from or mitigate to give birth to from active parts Into hot loss of energy.As a supplement or as an alternative, isolated groove can prevent or mitigate electric energy to be escaped from active parts.

In addition, experimental result has shown that these isolated grooves provide astonishing speed and increase and related to active parts The dark current levels of connection reduce.Particularly, inventor has found that an embodiment of the active parts of no isolated groove is showed in 1V Go out the average dark current of about 0.9 μ Α；However, when isolated groove is applied to the same embodiment, dark current is reduced in 1V Less than the average value of 0.2 μ Α.It is without being bound by theory, it is believed that the improvement of speed and dark current is since isolated groove causes, and is subtracted Small parasitic capacitance associated with active parts and parasite current.Therefore, isolated groove not only provide to external action/with it is outer The isolation that portion influences, and significantly improving for performance of optical components is provided.Therefore, the effect of isolated groove is not only to be isolated Active parts and other components.Therefore, when other components are not present on device, isolated groove is also preferable.

It is generally desirable to many other features of the isolated groove than device to extend more deeply into device.Accordingly, it may be desirable to Isolated groove is formed using being etched separately.However, it has been observed by the present inventors that form etching and/or the shape of described device waveguide The method for being also used for being formed isolated groove into the etching of component waveguide.In addition, this method provides device waveguide and component waveguide Precisely align.Therefore, the presence of these isolated grooves does not increase significant complexity or cost to manufacturing process.

Figure 1A to Fig. 1 G shows Optical devices, and Optical devices have waveguide, and waveguide includes active parts.Figure 1A is device Perspective view.Figure 1B is the top view of the part for the Optical devices shown in figure 1A for including active parts.Fig. 1 C are along label The sectional view of Figure 1A shown devices intercepted by the line of C.Fig. 1 D are optics shown in Figure 1A for being intercepted along the line labeled as D The sectional view of device.Sectional views of Fig. 1 E for Optical devices shown in Figure 1A for being intercepted along the line labeled as E.Fig. 1 F be along The sectional view of Optical devices shown in the Figure 1A intercepted labeled as the line of F.Fig. 1 G are Figure 1A for being intercepted along the line labeled as G The sectional view of shown Optical devices.

The device is in the classification of the Optical devices referred to as planar optical device.These devices are generally included relative to base Plate or the fixed one or more waveguides of substrate.Optical signal is substantially parallel to the plane of device along the direction of propagation of waveguide. The example of device plane includes the top side of substrate, the bottom side of substrate, the top side of substrate and/or the bottom side of substrate.

Illustrated device includes outside/cross side 10 that bottom side 14 is extended to from top side 12（Or edge）.Optical signal edge The direction of propagation for the length of the waveguide on planar optical device extends substantially through the outside 10 of the device.The top of the device Side 12 and bottom side 14 are non-outside.

The device includes one or more waveguides 16, and 16 carrying optical signal of waveguide is to optical component 17 and/or from optics structure 17 carrying optical signal of part.The example that the optical component 17 on the device can be included in includes（But it is not limited to）Selected from including following One or more of group component：Facet, optical signal can be by facets into and/or out of waveguide；Entry/exit port, signal can be from these By entry/exit port into and/or out of waveguide above or below device；Multiplexer is used to multiple optical signals being combined to In single waveguide；Demultiplexer/demultiplexer（demultiplexer）, it is used to detaching multiple optical signals and causes difference Optical signal be received in different waveguide；Photo-coupler；Photoswitch；Laser serves as optical signal source；Amplifier is used In the intensity of amplification optical signal；Attenuator, the intensity for the optical signal that is used to decaying；For modulating the signal to the modulation of optical signal Device；For converting light signals into the modulator of electric signal；And access, provide optical path for make optical signal from this Device bottom side 14 advances to the top side 12 of the device across the device.In addition, the device optionally includes electrical components.It for example, should Device may include electrical connector for applying current potential or electric current and/or to waveguide for controlling other components on Optical devices.

A part for waveguide 16 include first structure, a part for wherein waveguide 16 be defined in position on the substrate 20 it is saturating In optical medium 18.For example, a part for waveguide 16 is partly limited by the ridge 22 upwardly extended from the flat area of light transmission medium 18 It is fixed, as shown in Figure 1 C.In some cases, the top of flat area is by being partly extended in light transmission medium 18 or across saturating Optical medium 18 extend 24 bottom of groove and limit.Suitable light transmission medium includes（But it is not limited to）Silicon, polymer, silica, SiN, GaAs, InP and LiNbO₃.One or more clads（It is not shown）It is optionally positioned at 18 on light transmission medium.It is one or more Clad can be used as a kind of clad for being used for waveguide 16 and/or the device.When light transmission medium 18 is silicon, suitable clad packet It includes（But it is not limited to）Silicon, polymer, silica, SiN, GaAs, InP and LiNbO₃。

Recess portion 25（Figure 1B）It extends in flat area so that ridge 22 is positioned between recess portion 25.Recess portion 25 can only part Ground is extended in light transmission medium 18（Fig. 1 D）Or it passes completely through light transmission medium 18 and extends.Such as obvious from Fig. 1 D, recess portion 25 may It is spaced apart with ridge 22.Therefore, a part for waveguide 16 includes the second structure, wherein, the top of waveguide 16 from from flat area to The ridge 22 of upper extension partly defines, and the lower part of waveguide 16 is by extending in flat area and being spaced apart with ridge 22 recessed Portion 25 partly limits.

As shown in fig. ie, recess portion 25 can close to ridge 22 so that the side of ridge 22 and the side of recess portion 25 be combined to it is single In surface 26.Therefore, a part for waveguide 16 includes third structure, and wherein waveguide 16 is partly limited by surface 26.

As obviously, a part for waveguide 16 includes such as electro-absorption medium of active medium 27 in fig. ib.Active medium 27 It is configured to receive optical signal from a part for the waveguide 16 with third structure and guides the optical signal received to tool There is another part of the waveguide 16 of third structure.

In figure 1f, the flat area of ridge 22 from the active medium 27 of active medium 27 upwardly extends.Therefore, waveguide 16 A part includes the 4th structure as component waveguide 23.Component waveguide 23 is by the top side and outside of active medium 27 and partly It limits.The flat area of active medium 27 and the ridge 22 of active medium 27 are all positioned on the seed fraction 34 of light transmission medium 18. Therefore, the seed fraction 34 of light transmission medium 18 is between active medium 27 and substrate 20.

As being clearly, there are in fig. ib between each facet of active medium 27 and the facet of light transmission medium 18 Interface.The seed fraction 34 of light transmission medium 18 can be continuous with the light transmission medium that is included in waveguide 16 and can be below interface Extension.Therefore, when optical signal is advanced to from light transmission medium 18 in active medium 27, a part for optical signal enters light transmission medium 18 seed fraction 34 and another part of optical signal enters active medium 27.As described above, active medium 27 can grow on the seed fraction of the light transmission medium 18.

Interface between the facet of active medium 27 and the facet of light transmission medium 18 can have wears relative to optical signal Cross the angle of the direction of propagation out of plumb of waveguide 16.In some cases, the interface relative to substrate 20 substantially vertically but phase For direction of propagation out of plumb.The non-perpendicularity at interface reduces the effect of back-reflection.Interface relative to the direction of propagation conjunction Suitable angle includes（But it is not limited to）Angle between 80 ° and 89 ° and the angle between 80 ° and 85 °.

The part of the substrate 20 neighbouring with light transmission medium 18 is configured to that optical signal is back reflected into waveguide from waveguide 16 So that optical signal is constrained in waveguide 16 in 16.For example, the part of the substrate 20 neighbouring with light transmission medium 18 can be that light is exhausted Edge body 28 has the refractive index lower than light transmission medium 18.Refractive index reduction may cause optical signal past from light transmission medium 18 It returns and is reflected into light transmission medium 18.Substrate 20 may include the optical isolator 28 being located on substrate 29.Such as it will hereinafter become aobvious Right, substrate 29 can be configured to transmit optical signal.For example, substrate 29 can be by or and light transmission different from light transmission medium 18 The identical light transmission medium 18 of medium 18 is formed.In one example, which is configured in silicon-on-insulator（silicon-on- insulator）On chip.Insulator wafer includes the silicon layer as light transmission medium 18.Insulator wafer also includes being located at Silica layer on silicon substrate.Silica layer can be used as optical isolator 28 and silicon substrate can be used as substrate 29.

Optical devices include active parts 30, such as modulator and/or optical sensor.Position of the modulator on Optical devices It puts and is shown in fig. ib with being labeled as the line of K.For simplification figure 1B, the details of modulator configuration is not showed that in fig. ib.So And from other diagrams of such as Fig. 1 G, modulator configuration is obvious.The modulator of Fig. 1 G is built in a part for waveguide 16, A part for waveguide 16 has the 4th structure constructed according to Fig. 1 F.Show in phantom shown doped region portion in figure 1g Obscured with the interface for preventing them and between different materials on the periphery divided.It has been shown in solid the boundary between different materials Face.Modulator be configured to active medium 27 apply electric field just the optical signal that is received by modulator is carried out phase and/or Intensity modulated.

The flat area of ridge 22 from the active medium 27 of active medium 27 upwardly extends.Doped region 40 is in active medium 27 Flat area in and also in the ridge 22 of active medium 27.For example, the doped region 40 of active medium 27 be positioned at it is active On the outside of the ridge 22 of medium 27.In some cases, each in doped region 40 extends up to the top side of active medium 27, As shown in Figure 1 G.In addition, doped region 40 is extended to far from ridge 22 in the flat area of active medium 27.From active medium 27 The transition of ridge 22 to the doped region 40 in the flat area of active medium medium 27 can be continuous and continual, such as figure Shown in 1G.

Each in doped region 40 can be n-type doping region or P-doped zone domain.It is for example, each in n-type doping region It is a to may include that each in N type dopant and P-doped zone domain may include P-type dopant.In some cases, active medium 27 Include for n-type doping region doped region 40 and be P-doped zone domain doped region 40.It is being mixed in active medium 27 Separation between miscellaneous region 40 causes to form PIN in modulator 30（P-type doped region-intrinsic region-N-shaped doped region） Knot.

Electric conductor 44 is positioned on the flat area of active medium 27.Particularly, electric conductor 44 is respectively contacted in active Jie A part for doped region 40 in the flat area of matter 27.Therefore, each in doped region 40 with a certain concentration adulterate with Just allow to provide telecommunication between one of its doped region 40 in electric conductor 44 and active medium 27.Therefore, electric energy can be applied Electric conductor 44 is added to apply electric field to active medium 27.The area of light transmission medium 18 or active medium between doped region Domain can be undoped or lightly doped, as long as doping is insufficient to allow dopant material to serve as the electric conductor for making active parts electric short circuit.

Modulator and/or optical sensor with the section according to Fig. 1 G can be used in addition to the configuration in Figure 1A to Fig. 1 F Except configuration.Manufacture about the modulator with the section according to Fig. 1 G, additional detail structurally and operationally can be seen Entitled " the Optical Device Having Modulator Employing submitted on December 15th, 2009 In the U.S. Patent Application No. 12/653,547 of Horizontal Electrical Field " and the patent is drawn with its full text Mode is incorporated into herein.Manufacture about the optical sensor with the section according to Fig. 1 G, structurally and operationally additional Details can be seen in " Optical Device Having Light Sensor submitting, entitled on July 21st, 2011 In the U.S. Patent Application No. 61/572,841 of with Doped Regions ", and also see and submitted within 10th in August in 2011 , entitled " Application of Electrical Field Power to Light-transmitting medium In 18 " U.S. Patent Application No. 13/136,828, each is incorporated into herein in entirety by reference.

Fig. 2 represents another embodiment of active parts and can represent the Figure 1B intercepted along the line labeled as G Shown in device section.Show in phantom the periphery of the part of shown doped region in fig. 2 with prevent they with not Obscure with the interface between material.It has been shown in solid the interface between different materials.First doped region 46 and the second doped region 48 combine to form each in doped region 40.In some cases, the first doped region 46 is located in light transmission medium 18 but simultaneously It is not located in active medium 27, and the second doped region 48 is located in active medium 27.First doped region 46 can contact second Doped region 48 can be overlapped with the second doped region 48.In some cases, 48 weight of the first doped region 46 and the second doped region At least part that is folded and being overlapped is located in light transmission medium 18.Under other circumstances, the first doped region 46 and the second doped region 48 overlappings, but in active medium 27 and there is no any overlapping.

It is included in the first doped region 46 in same doped region 40 and the second doped region 48 respectively includes same type Dopant.For example, the first doped region 46 and the second doped region 48 in N-shaped doped region 40 respectively include n-type dopant.Packet The first doped region 46 and the second doped region 48 included in same doped region 40 can have identical concentration of dopant or difference Concentration.

While figure 2 show that the flat area of active medium 27, the flat area of active medium 27 may be not present.Example Such as, flat area may be etched through always by forming the etching of the flat area of active medium 27.In these cases, first mixes Miscellaneous 46 and second doped region 48 of area is all formed in light transmission medium 18.

While figure 2 show that do not extend downwardly into the first doped region 46 of optical isolator 28, the first doped region 46 can be with It extends downwardly into optical isolator 28 or extends in optical isolator 28.

The Optical devices of Fig. 2 can use the system employed in the manufacture of integrated circuit, photoelectric circuit and/or Optical devices Technology is made to construct.

Fig. 3 is the sectional view of an embodiment of the alternate embodiment of active parts and can represent along labeled as G's The section of the device shown in Figure 1B that line is intercepted.Show in phantom the periphery of the part of shown doped region in figure 3 To prevent their interfaces between different materials from obscuring.It has been shown in solid the interface between different materials.

Doped region 40 respectively includes the part extended in the ridge 22 of active medium 27 and extends to active medium 27 Flat area in another part.Doped region in ridge 22 of the doped region 40 than extending to active medium further extends Into the flat area of active medium.For example, the part ratio of each doped region 40 in the flat area of active medium 27 Part in ridge 22 is thicker.Reduce the extension in doped region to ridge 22 to reduce in doped region and be conducted through ridge 22 Interaction between optical signal.Therefore, the extension reduced in doped region to ridge 22 reduces optical loss.Make doped region Further into flat area, extension allows the electric field formed between doped region to be moved closer to substrate 20.Therefore, it adulterates Region further extends to the part that the optical signal to interact with electric field is increased in tablet.Therefore, it alleviates and is put down with increasing The associated problem of plate area thickness, because they can be solved by the way that doped region 40 is further extended in flat area Certainly.

Suitable thickness in the part of chi chung doped region 40（It is labeled as T in figure 3_R）Including being more than 0.01,0.075, 0.1 or 0.125 μm and/or the thickness less than 0.175,0.2 or 0.5 μm.Doping in the flat area of active medium 27 The suitable thickness of the part in region 40（It is labeled as T in figure 3_s）Including being more than 0.175,0.2 or 0.225 μm and/or being less than 0.275th, 0.3,0.325 or 0.8 μm of thickness.Suitable thickness ratio（The thickness of the part of doped region in flat area Degree:In the ratio between thickness of part of doped region of chi chung）Including being more than 1,1.25 or 1.5 and/or less than 2.0,2.5 and 3 Than.

Doped region 40 can be individually the first doped region of combination（It is not shown in figure 3）With the second doped region（In figure 3 It is not shown）Result.First doped region can be located in the flat area of active medium and the second doped region can be located at ridge In 22 and in the flat area of active medium 27.It is included in the first doped region in same doped region 40 and the second doped region is each From the dopant including same type.For example, the first doped region and the second doped region in N-shaped doped region 40 respectively include N-type dopant.The first doped region and the second doped region being included in same doped region can have identical concentration of dopant Or various concentration.In addition, the first doped region can contact the second doped region to form doped region 40 or can be with second Doped region 48 is overlapped to form doped region 40.In some cases, the first doped region and the second doping area overlapping and again Folded at least part is located in the flat area of active medium 27.

Although Fig. 3 shows the doped region 40 for not extending downwardly into optical isolator 28, doped region 40 can be downward It extends to optical isolator 28 or extends in optical isolator 28.

During the operation of modulator constructed according to Figure 1A to Fig. 1 G, Fig. 2 or Fig. 3, electronic device 47（Figure 1A）It can For forming electric field in active medium 27 to the application electric energy of electric conductor 44.For example, electronic device can field source it Between form voltage difference.Electric field can be formed, but does not generate the notable electric current across active medium 27.Active medium 27 can be it In Fu Langzi-Kai Erdishi occur in response to the application of electric field（Franz-Keldysh）The medium of effect.Fu Langzi-Kai Er The assorted effect of enlightening is the variation of absorbance and light phase as caused by active medium 27.For example, Franz Keldysh effect permits Perhaps by absorbing photon by the Electron Excitation to conduction band in valence band, even if the energy of photon is less than band gap.In order to which utilization is not bright Zi-Kai Erdishi effects, active region can have the band-gap energy for the photon energy for being slightly larger than light to be modulated.It applies field Adding reduces absorption edge via Franz Keldysh effect and allows to be absorbed.Upon application of field, hole It is Chong Die with electrical carrier function and therefore can generate electron-hole pair.Therefore, active medium 27 can be absorbed by active medium 27 optical signals received and increase the electric field and increase the light quantity absorbed by active medium 27.Therefore, electronic device energy Electric field is tuned to tune the light quantity absorbed by active medium 27.Therefore, electronic device can to electric field carry out intensity modulated so as to Modulated optical signal.Furthermore, it is necessary to it is usually not related to freely be carried by electric field generation using the electric field of Franz Keldysh effect Stream.

Include electro-absorption medium 27, such as semiconductor for the suitable active medium 27 in modulator.However, different partly lead The light absorption characteristics of body are different.The suitable semiconductor of modulator for using in communication applications includes Gei-_xSi_x(germanium- Silicon), wherein x is greater than or equal to zero.In some cases, x is less than 0.05 or 0.01.Modulation highest can be made by changing the variable x The wave-length coverage transfer of effect.For example, when x is zero, modulator is suitable for the range of 1610-1640 nm.Increase the value energy of x Wave-length coverage is transferred to lower value.For example, about 0.005 to 0.01 x is suitable for adjusting c bands (1530-1565 nm) System.

Structure shown in Fig. 1 G, Fig. 2 or Fig. 3 is also used as optical sensor.For example, active medium 27 can be light Absorbing medium, such as germanium.Therefore, the number 27 in Figure 1A to Fig. 1 G, Fig. 2 or Fig. 3 can represent light absorbing medium.It is passed in light During the operation of sensor, phase reverse bias field applies across 27 both ends of active medium.When active medium 27 absorbs optical signal, Electric current flows through the active medium 27.Therefore, the reception of optical signal is indicated by the electric current of light absorbing medium.In addition, the magnitude of current Value can indicate the power and/or intensity of optical signal.Different active mediums 27 can absorb different wave length and correspondingly apply to light In sensor, the function depending on optical sensor.Suitable for detecting the light absorbing medium of optical signal used in communication applications Including（But it is not limited to）Germanium, SiGe, SiGe quantum wells, GaAs and InP.Germanium is suitable for Detection wavelength in 1300 nm to 1600 nm The optical signal of range.In some cases, electronic device may be configured to using the structure shown in Fig. 1 G as modulator and The operation of photodetector.

In active medium 27 or light transmission medium 18, the suitable dopants in n-type doping region include（But it is not limited to）Phosphorus and/ Or arsenic.The suitable dopants in P-doped zone domain include（But it is not limited to）Boron.Doped region 40 is doped to conduction.It is mixed in p-type The suitable concentration of P-type dopant in miscellaneous region includes（But it is not limited to）：More than 1 × l0¹⁵ cm^-3、1×l0¹⁷ cm^-3Or 1 × 10¹⁹ cm^-3Concentration and/or less than 1 × l0¹⁷ cm^-3, 1 × 10¹⁹ cm^-3Or 1 × 10²¹cm^-3Concentration.In N-doped zone The suitable concentration of N type dopant in domain includes（But it is not limited to）：More than 1 × l0¹⁵ cm^-3, 1 × l0¹⁷ cm^-3Or 1 × 10¹⁹ cm^-3Concentration and/or less than 1 × l0¹⁷ cm^-3, 1 × 10¹⁹ cm^-3Or 1 × 10²¹cm^-3Concentration.

The active parts of Fig. 1 G, Fig. 2 and Fig. 3 can use the manufacture in integrated circuit, optoelectronic circuit and/or Optical devices Employed in manufacturing technology construct.Manufacture about the active parts with the section according to Fig. 1 G, Fig. 2, and/or Fig. 3, Additional detail structurally and operationally can see entitled " the Optical Component submitted on 2 1st, 2012 The U.S. Patent Application No. 13/385,099 of Having Reduced Dependency on Etch Depth " and at 2012 2 Entitled " the Optical Component Having Reduced Dependency on Etch Depth " that the moon is submitted on the 15th U.S. Patent Application No. 13/385,372 in, each is incorporated into herein in entirety by reference.

Active parts is configured to isolated groove 49, and isolated groove 49 each extends to active medium and/or light transmission In medium 18.In some cases, active parts is configured to isolated groove 49, and isolated groove 49 has each extended through Source medium and/or light transmission medium 18.In some cases, active parts is configured to isolated groove 49, isolated groove 49 Each extend through lower floor's seed fraction of active medium and light transmission medium 18.In addition, one or more of isolated groove 49 49 and waveguide 16 together define the periphery for surrounding a part for the active parts.Multiple isolated grooves can be coupled/ With reference to（stitch）Together to limit periphery.For example, periphery can in combination be limited by multiple isolated grooves and waveguide 16. In one example, one or more of isolated groove is terminated at waveguide 16 so that isolated groove 49 and waveguide 16 define together The periphery that a part for source block surrounds.In one example, one or more of isolated groove 49 is terminated at waveguide 16 So that isolated groove 49 and waveguide 16 limit the periphery for the part for surrounding active parts together.In another example, isolating trenches So that isolated groove 49 and waveguide 16 are together formed and will be had at one in slot 49 two different zones for terminating at waveguide 16 The periphery that a part for source block surrounds.In each of the above situation, by the part of the active parts of perimeter It can include selected from including the one, two or three feature in following group：The flat area of active medium, electric conductor 44, With doped region 40 part or all.The part of waveguide 16 that isolated groove 49 terminates at can be component waveguide 23 and/ Or it is defined in the part of the waveguide 16 in light transmission medium 18（Device waveguide）.

The isolated groove 49 that may be formed on active parts is so that different peripheries is defined to be formed in component waveguide 23 In opposite side.In addition, it can be combined to define or be formed combination periphery by the different peripheries that different isolated grooves 49 are limited. Combination periphery for by the way that the periphery respectively partly limited by one or more of isolated groove 49 is combined and Obtained outermost peripheral.Isolated groove 49 can be formed such that the combination perimeter active parts.

Isolated groove 49 is shown in the active parts of Fig. 1 G, Fig. 2 and Fig. 3.In these active parts in each Isolated groove 49 each extend through both active medium and light transmission medium 18.For example, the wall of each isolated groove 49 is by having Source medium and 18 son of light transmission medium limit.Diagram isolated groove 49 extends through the seed fraction 34 of light transmission medium 18.In addition, Isolated groove 49 extends downwardly into substrate 20.For example, the bottom of isolated groove 49 is limited by optical isolator 28, optical isolator 28 is used In the bottom for limiting component waveguide 23 and waveguide 16.Although not shown, isolated groove 49 is extended in substrate 20.Especially Ground, isolated groove 49 extend in optical isolator 28 or in substrates 29.

Grooved position in the active parts of Fig. 1 G, Fig. 2 and Fig. 3 is shown in fig. ib.Each isolated groove 49 terminates at Each isolated groove 49 and waveguide 16 is caused to together form and surround a part for active parts at the different piece of waveguide 16 The periphery.For example, each isolated groove 49 and waveguide 16 together form the active medium that will be included in active parts The periphery that a part surrounds.Each isolated groove 49 and waveguide 16 together form and surround a part for active parts Periphery, a part for active medium includes the flat area of active medium.

Active parts respectively includes two isolated grooves 49, and isolated groove 49 is respectively used to form together with waveguide 16 to be had The periphery that a part for source medium surrounds.Therefore, two peripheries are formed on the device.When considered together, two peripheries Define the periphery of combination.For example, the outermost peripheral on the periphery of combination proves the periphery of combination.The perimeter of combination is active Component.Therefore, isolated groove 49 and waveguide 16 form or define together the periphery for surrounding the active parts.

Isolated groove 49 in fig. ib is shown as terminating at the part of the waveguide 16 defined in light transmission medium 18 Place；However, isolated groove 49 can be additionally or alternatively terminated at component waveguide 23.

Fig. 4 A to Fig. 4 P show the method for manufacturing the active parts with isolated groove 49.This method shows to make By the use of insulator wafer or chip as the initial precursor of Optical devices.But this method is applicable to put down in addition to silicon-on-insulator Platform except platform.

Fig. 4 A show the first mask 50 being formed on the insulator wafer or chip for providing device precursor.Figure 4A shows the sectional view of device precursor.First mask 50 is so that a region of device precursor exposes, wherein will be formed active Chamber 52 and remaining region for protecting the depicted portion of device precursor simultaneously.Active cavity 52 is will wherein form active medium 27 The region of device precursor.Then the first etching is performed to form active cavity 52.First etching obtains the device precursor of Fig. 3 A.It holds Row first etches so that the seed fraction 34 of light transmission medium 18 retains on the substrate 20.Therefore, it is terminated before substrate 20 is reached First etching.

As being previously mentioned in the discussion of fig. 2, active parts can include n in the seed fraction of light transmission medium 18 The first doped region of type 46 and the first doped region of p-type 46.Fig. 4 B show the formation of these the first doped regions 46.N-shaped first adulterates Area 46 and the first doped region of p-type 46 are successively formed in the light transmission medium 18 at 52 bottom of active cavity to provide the device of Fig. 4 B Precursor.The appropriate method for forming the first doped region 46 includes（But it is not limited to）Dopant is implanted into.The first doped region of N-shaped 46 can be It can be covered during the first doped region of N-shaped is formed by mask and the first doped region of p-type 46 during forming the first doped region of p-type Film.It, can be with base in the direction for forming the implantation of the first doped region 46 period dopant as in figure 4b as shown in the arrow for being labeled as A Perpendicular to the surface of the light transmission medium 18 at 52 bottom of active cavity in sheet.

In some cases, device precursor is made to anneal after the first doped region 46 is formed.Appropriate annealing temperature includes big Temperature in 950 DEG C, 1000 DEG C or 1050 DEG C and/or less than 1100 DEG C, 1150 DEG C or 1200 DEG C.

Fig. 4 C to Fig. 4 P do not show that the first doped region 46, because in the active parts of Fig. 1 G and Fig. 3 and there is no the One doped region 46.However, it is possible to use the device precursor of Fig. 4 B performs the step discussed in the context of Fig. 4 C to Fig. 4 P Suddenly to realize active parts according to fig. 2.

It removes the first mask 50 and active medium 27 is formed in the active cavity 52 of Fig. 4 A or Fig. 4 B in order to provide Fig. 4 C Device precursor.When light transmission medium 18 is silicon and active medium 27 is germanium or Si1-xGe x, active absorbing medium 27 can be grown on On the seed fraction 34 of light transmission medium 18.

After active medium 27 is formd, the first mask 50 can be removed and device precursor can be flattened. Suitable flat method includes（But it is not limited to）Chemically mechanical polishing（CMP）Process.

Second mask 54 can be formed on device precursor, as shown in the figure, on the device precursor of Fig. 4 D.Second mask is protected Protect the position that the ridge 22 of wherein waveguide 16 will be formed on device, the position including component waveguide 23 and device waveguide.Dress The rest part put keeps exposure.

Third mask 56 is formed on the device precursor of Fig. 4 D, in order to provide the device precursor of Fig. 4 E to Fig. 4 G.Fig. 4 E are The top view of device.Fig. 4 F are for the sectional view and Fig. 4 G of device precursor shown in Fig. 4 E for being intercepted along the line labeled as F The sectional view of device precursor shown in Fig. 4 E intercepted along the line labeled as G.Third mask 56 is formed in the second mask 54 On.Third mask 56 protects the specific position of active medium, and in this position, flat area will be formed in active medium； However, third mask 56 keeps wherein exposing the region for forming isolated groove 49.

Waveguide is etched on the device precursor of Fig. 4 E and performs, in order to provide the device precursor of Fig. 4 A to Fig. 4 J.Fig. 4 I are edge It the sectional view of device precursor shown in Fig. 4 H intercepted labeled as the line of I and Fig. 4 J is is intercepted along the line labeled as J Fig. 4 H shown in device precursor sectional view.Waveguide etching forms the flat area in light transmission medium 18.Therefore, it performs Waveguide etching causes flat area to have desirable thickness to etch light transmission medium 18.For example, perform waveguide etching so as to The ridge 22 of light transmission medium 18 with desired height as shown in fig. 4j is provided.Waveguide etching can be selected to come than light transmission medium more Active medium is etched soon.Therefore, as shown in fig. 41, exposed active medium is deeper etched than light transmission medium 18.As incited somebody to action From being hereafter apparent from, position that the position of exposed active medium will become isolated groove 49.Therefore, exposed active medium As channel precursor.

Third mask 56 removed from the device precursor of Fig. 4 H to Fig. 4 J and form the 4th mask 58 in order to provide Fig. 4 K to The device precursor of Fig. 4 M.Sectional views and figure of Fig. 4 L for device precursor shown in Fig. 4 K for being intercepted along the line labeled as L Sectional views of the 4M for device precursor shown in Fig. 4 K for being intercepted along the line labeled as M.4th mask 58 protects light transmission to be situated between The flat area of matter 18, the flat area of light transmission medium 18 have been etched to desirable thickness.Continue in the second mask 54 Protection will forming member waveguide 23 region while, the 4th mask 58 keep active medium in will form flat area Position exposes.4th mask 58 and the second mask 54 keep channel precursor exposure.Because the feature on mask and device precursor is not It can be precisely aligned, the edge of the 4th mask 58 is shown spaced rearward with the edge of light transmission medium 18.Therefore, close to Channel precursor and the region of light transmission medium 18 that positions keeps exposure.Suitable 4th mask 58 includes（But it is not limited to）It is photic anti- Lose agent, silica and silicon nitride.

Execution unit waveguide etches and then removes the second mask 54 and the 4th on the device precursor of Fig. 4 K to Fig. 4 M Mask 58 is to provide the device precursor of Fig. 4 N to Fig. 4 P.Fig. 4 O are device shown in Fig. 4 N for being intercepted along the line labeled as O Sectional view of the sectional view and Fig. 4 P of precursor for device precursor shown in Fig. 4 N for being intercepted along the line labeled as N.Component wave It leads etching and forms the flat area in active medium.Therefore, execution unit waveguide etching is in order to provide with desired thickness The flat area of the active medium of degree.For example, execution unit waveguide etches have desired height as shown in Fig. 4 O Active medium ridge 22.

In addition, the channel precursor of exposure is also etched so as to complete the formation of isolated groove 49.Isolated groove 49 is shown The seed fraction of light transmission medium 18 is extended through down to substrate 20, but the seed fraction of light transmission medium 18 can be extended only into Or in seed fraction, the duration depending on component waveguide etching.Alternatively, isolated groove 49 can be partly extended to base In bottom 20, the duration depending on component waveguide etching.

It is other to etch in the method that be directed into Fig. 4 A to Fig. 4 P.Fig. 5 A to Fig. 5 L are shown in which to etch supplement It is introduced into the method for Fig. 4 A to Fig. 4 P to form the method for the recess portion 25 shown in Figure 1B.

5th mask 60 is formed on the device precursor of Fig. 4 H to Fig. 4 J, to form the device precursor of Fig. 5 A to Fig. 5 C. Fig. 5 A show the top view of device precursor.Fig. 5 B are device precursor shown in Fig. 5 A for being intercepted along the line labeled as B Sectional view and Fig. 5 C are the sectional view of Fig. 5 A shown device precursors that is intercepted along the line labeled as C.5th mask, 60 shape Into on the second mask 54, therefore channel precursor and it will wherein form the region of recess portion 25 and keep exposure.

In addition, the 5th mask 60 is spaced apart with the edge of channel precursor.Therefore, close to the light transmission medium of channel precursor 18 A part keep exposure.The rest part of second mask 54,56 and the 5th mask 60 of third mask protection described device precursor.

Recess portion is etched in the device precursor performed on the device precursor of Fig. 5 A to Fig. 5 C in order to provide Fig. 5 D to Fig. 5 F.Fig. 5 D Top view for device precursor.Fig. 5 E for device precursor shown in Fig. 5 D for being intercepted along the line labeled as E sectional view simultaneously And sectional views of Fig. 5 F for device precursor shown in Fig. 5 D for being intercepted along the line labeled as F.Since recess portion etching forms Recess portion 25 performs recess portion etching and continues one section of duration for providing the recess portion 25 with desired depth.In addition, the ditch of exposure Slot precursor is further etched and may complete the formation of isolated groove 49, depending on recess portion etching duration and/or The ratio of the etch-rate of active medium and light transmission medium 18.

The removal of device precursor and the 4th mask 58 of 5th mask 60 and third mask 56 from Fig. 5 D to Fig. 5 F are formed in To form the device precursor of Fig. 5 G to Fig. 5 I on device precursor.Fig. 5 G are the top view of device precursor.Fig. 5 H are along label The sectional view of device precursor shown in Fig. 5 G that the line of H intercepts and Fig. 5 I are Fig. 5 G for being intercepted along the line labeled as I Shown in device precursor sectional view.4th mask 58 protects the flat area of recess portion 25 and light transmission medium 18, light transmission medium 18 Flat area be etched to desirable thickness.The second mask 54 continue protection will forming member waveguide 23 area While domain, the 4th mask 58 makes that the position exposure of flat area will be formed in active medium.4th mask 58 and second is covered Mould 54 exposes channel precursor.Because mask cannot be precisely aligned always with the feature on device precursor, the side of the 4th mask 58 Edge is shown spaced rearward with the edge of light transmission medium 18.Therefore, make the light transmission medium 18 positioned close to channel precursor Region exposure.Suitable 4th mask 58 includes（But it is not limited to）Photoresist, silica and silicon nitride.

Component waveguide, which is etched on the device precursor of Fig. 5 G to Fig. 5 I, to be performed to provide the device precursor of Fig. 5 J to Fig. 5 L.Figure 5J is the top view of device precursor.Sectional views of Fig. 5 K for device precursor shown in Fig. 5 J for being intercepted along the line labeled as K With sectional views of Fig. 5 L for device precursor shown in Fig. 5 J for being intercepted along the line labeled as L.Component waveguide is etched in active Flat area is formed in medium.Therefore, execution unit waveguide etching is in order to provide the flat of the active medium with desired thickness Plate region.For example, ridge 22 of the execution unit waveguide etching in order to provide the active medium as it can be seen from figure 5k with desired height. In addition, the channel precursor of exposure is further etched and if not etching into desirable depth during recess portion etches, It can etch to etch into desirable etching by component waveguide.Isolated groove 49 is shown extend across light transmission medium 18 Seed fraction can be extended only into down to substrate 20 in the seed fraction or seed fraction of light transmission medium 18, depended on The duration of component waveguide 23.Alternatively, isolated groove 49 can be partly extended in substrate 20, depending on component waveguide The duration of etching.

In some cases, it may be desirable to the outside of isolated groove 49 is limited by wall.Fig. 6 A to Fig. 6 I, which are shown, to be used for Isolated groove 49 is formed so that recess portion is adjacent to isolated groove 49 and is formed to form the wall for limiting isolated groove 49 side Method.

5th mask 60 is formed on the device precursor of Fig. 4 H to Fig. 4 J, to form the device precursor of Fig. 6 A to Fig. 6 I. Fig. 6 A are the top view of device precursor.Sections of Fig. 6 B for device precursor shown in Fig. 6 A for being intercepted along the line labeled as B Scheme and sectional views of Fig. 6 C for device precursor shown in Fig. 6 A for being intercepted along the line labeled as C.5th mask 60 is formed In on the second mask 54, therefore channel precursor and it will wherein form the region of recess portion 25 and keep exposure.In addition, it will be adjacent to Isolated groove 49 and the region that forms wall recess also keeps exposed.5th mask 60 is spaced apart with the edge of channel precursor.Therefore, A part close to the light transmission medium 18 of channel precursor keeps exposure.Second mask 54,56 and the 5th mask 60 of third mask The rest part of protective device precursor.

Device precursor of the recess portion etching in order to provide Fig. 6 D to Fig. 6 F is performed on the device precursor of Fig. 6 A to Fig. 6 C.Fig. 6 D Top view for device precursor.Fig. 6 E for device precursor shown in Fig. 6 D for being intercepted along the line labeled as E sectional view simultaneously And sectional views of Fig. 6 F for device precursor shown in Fig. 6 D for being intercepted along the line labeled as F.Since recess portion etching forms Recess portion performs recess portion etching and continues one time for providing the recess portion with desired depth, as fig 6 f illustrates.Recess portion etches Wall recess is formed in light transmission medium 18.Therefore, wall recess also forms recess depths as illustrated in fig. 6e.Such as shown from Fig. 6 E So, recess portion is etched into the channel precursor of step etching exposure and may complete the formation of isolated groove 49, depending on recess portion loses The duration at quarter and/or the ratio of active medium and the etch-rate of light transmission medium 18.

The removal of device precursor and the 4th mask 58 of 5th mask 60 and third mask 56 from Fig. 6 D to Fig. 6 F are formed in On device precursor.The device precursor to form Fig. 6 G to Fig. 6 I is etched to the waveguide of result execution unit.Fig. 6 G are device precursor Top view.Fig. 6 H for the sectional view and Fig. 6 I of device precursor shown in Fig. 6 G for being intercepted along the line labeled as H be along The sectional view of device precursor shown in Fig. 6 G intercepted labeled as the line of I.4th mask 58 protection recess portion, wall recess and light transmission The flat area of medium 18, the flat area of light transmission medium 18 have been etched to desirable thickness.The second mask 54 after Continuation of insurance shield will forming member waveguide 23 region while, the 4th mask 58 makes that flat area will be formed in active medium Position exposes.4th mask 58 and the second mask 54 expose channel precursor.Because mask cannot with the feature on device precursor It always precisely aligns, the edge of the 4th mask 58 is shown spaced rearward with the edge of light transmission medium 18.Therefore, close to ditch The region of the light transmission medium 18 of slot precursor positioning keeps exposure.

Component waveguide, which is etched in active medium, forms flat area.Therefore, perform component waveguide etching in order to provide The flat area of active medium with desired thickness.For example, execution unit waveguide etches to have as shown in figure 6h There is the ridge 22 of the active medium of desired height.In addition, the channel precursor of exposure is further etched and if is lost in recess portion Desirable depth is not etched between setting a date, can etch to etch into desirable etching by component waveguide.Isolating trenches Slot 49 is shown extend across the seed fraction of light transmission medium 18 down to substrate 20, but can extend only into light transmission medium 18 Seed fraction or seed fraction in, depending on component waveguide etching duration.Alternatively, isolated groove 49 can part Ground is extended in substrate 20, the duration depending on component waveguide etching.

The method of Fig. 6 A to Fig. 6 I may be more tolerant to change in process than other methods.Wall has to mark in Fig. 6 H Thickness.In some cases, wall thickness is less than 1,0.5,0.3 μm.

Such as obvious from Fig. 5 L and Fig. 6 I, recess portion etching provides the device with the second structure shown in Fig. 1 D.Fig. 5 L, figure The waveguiding structure of 6I and Fig. 1 D is suitable for curved waveguide and the waveguide being drastically bent.Particularly, this waveguiding structure can reduce often Often optical loss associated with curved waveguide.Therefore, it is used for as disclosed in Fig. 5 A to Fig. 6 I close to 16 shape of waveguide The formation that can be used for into the method for these recess portions with active parts simultaneously forms these recess portions for being adjacent to curved waveguide. Be in close proximity to curved waveguide and formed these recess portions may be it is illustrated above be in close proximity to waveguide 16 formed they supplement or conduct It is illustrated above be in close proximity to waveguide 16 formed their replacement.

Doped region 40 can be formed on the device precursor of Fig. 4 N to Fig. 4 O, such as the context in Fig. 1 G, Fig. 2 or Fig. 3 Discussed in.It, can be from Fig. 5 J to Fig. 5 L or figure before region 40 discussed in the context for forming Fig. 1 G, Fig. 2 or Fig. 3 The device precursor of 6G to Fig. 6 I removes the second mask 54 and the 4th mask 58.In some cases, it may be desirable to be adulterated being formed Keep the second mask 54 and/or the 4th mask 58 in place during region.Therefore, doped region may remove the second mask 54 And/or the 4th completely or partially form before mask 58.Can use traditional integrated circuit manufacturing technology, including deposition and from Son is implanted into form doped region.U.S. Patent Application No. 13/385 can be seen about the additional detail for forming doped region, In 099 and 13/385,372.

After forming doped region and removing the second mask 54 and the 4th mask 58, traditional integrated circuit can be used Manufacturing technology forms electric conductor 44.

Such as obvious from methodology above, isolated groove 49 is obtained as the result of both component waveguide etching and waveguide etching It arrives；However, isolated groove 49 can be obtained only as the result of waveguide etching.For example, waveguide can be selected, which to be etched to, to be had Sufficiently high etch-rate preferred ratio（The ratio of active medium and light transmission medium 18）So that isolated groove 49 etches the phase in waveguide Between be formed as desirable depth.In these cases, it may not be necessary to the exposure during component waveguide etches of isolated groove 49.

The method of Fig. 4 A to Fig. 4 P shows that isolated groove 49 is terminated at component waveguide 23；However, isolated groove 49 can To terminate at both component waveguide 23 and waveguide 16 or only at waveguide 16, type, etch-rate depending on etching preferentially compare And the duration.For example, the isolated groove 49 of Fig. 5 K is shown terminating in the interface of component waveguide 23 and waveguide 16.

Suitable first mask 50 includes（But it is not limited to）Hard mask such as silica mask, silicon nitride and polyimides. Suitable second mask 54 includes（But it is not limited to）Hard mask, such as silica mask, silicon nitride and polyimides.Suitable Three masks 56 include（But it is not limited to）Photoresist, silica and silicon nitride.Suitable 4th mask 58 includes（But it is not limited to） Photoresist, silica and silicon nitride.Suitable 5th mask 60 includes（But it is not limited to）Photoresist, silica and nitridation Silicon.

The width of the bottom of isolated groove 49 is in figure 3 with W_ITLabel.In some cases, it is any in above-described embodiment Embodiment has isolated groove 49, and isolated groove 49 is constructed such that the width (W of isolated groove 49_IT) be likely larger than 0.2, 0.3 or 0.4 and/or less than 0.6,0.7 or 0.8.

Although described above describes mask using the numeric identifiers such as first, second or third, these marks It accords with the mask for representing different but does not indicate that sequence.For example, the 4th mask 58 can use before the 5th mask 60.It in addition, can To perform step described above with from described different sequence.For example, can waveguide etching before execution unit Waveguide etches.This sequentially will cause the 4th mask 58 to be positioned on device precursor and then by third mask 56 to place It is removed before on device precursor.

Suitable first etching includes（But it is not limited to）Dry-etching.Suitable waveguide etching includes（But it is not limited to）Dry type Etching.Suitable components waveguide etching includes（But it is not limited to）Dry-etching.Suitable recess portion etching includes（But it is not limited to）Dry type Etching.In many instances it is desirable to waveguide etching and/or recess portion etching than 18 faster speed of light transmission medium come to be etched with Source medium.Waveguide etching can allow the isolated groove 49 to extend more deeply into device simultaneously the priority of active medium And it can therefore improve the heat provided by isolated groove 49, the degree being electrically and/or optically isolated.When active medium include germanium or When Si1-xGe x is either made of germanium or Si1-xGe x and light transmission medium 18 includes silicon or is made of silicon, than light transmission medium 18 quickly The example for etching the dry-etching of active medium includes DR1E（Deep reactive ion）Etching, such as isotropic plasma are lost It carves, according to Bosch process（Bosch process）With sulfur hexafluoride [SF₆] and octafluorocyclobutane [C₄F₈] alternate passivation layer Deposition.

Although discussion above discloses the isolated groove 49 on the opposite side of waveguide 16, it may be desirable in waveguide 16 There are one or more isolated grooves 49 only on side.Therefore, in some cases, which can include active parts, With the one or more isolated grooves 49 being positioned on the single side of waveguide 16 and without being positioned at the opposite of waveguide 16 Isolated groove 49 on side.When active parts is in close proximity to the edge positioning of the device, this configuration may be useful.

As a supplement or as an alternative, each in above-mentioned isolated groove 49 is shown terminating in two in waveguide 16 At different location.However, it can be desirable to isolated groove 49 terminates at the only one position in waveguide 16 and isolated groove 49 The other end positioned far from waveguide 16 and/or one or more isolated groove 49 is configured to have no and terminates at appointing at waveguide 16 What end.

Periphery illustrated above is combined by single continuous isolated groove and waveguide and is formed.In comparison, isolated groove The periphery may be limited together with waveguide.For example, isolated groove need not be terminated at waveguide, but work as and consider together with waveguide When, the profile on periphery can be provided.As another example, multiple isolated grooves can limit periphery.For example, it is illustrated above every Smaller groove may be divided into from groove, when considered together（It is coupled/is combined together）Define with by it is illustrated above every The identical periphery formed from groove.

Although disclosed above show to be filled with gas（Such as air）, solid and/or liquid isolated groove can position In one or more of isolated groove or one or more of isolated groove can be filled.For example, covering material is all As silica can be located on one or more of isolated groove.

In view of these teachings, other embodiments of the invention, combination and modification will show those skilled in the art And it is clear to.Therefore, the present invention should be limited only by appended claims, including what is observed with reference to description above and attached drawing All such embodiments and modification.

Claims

1. a kind of Optical devices, including：

Active parts in substrate, have selected from including in functional group of optical sensor functionality and optical modulator extremely A few functionality,

The active parts includes active medium, and the active medium includes flat area and upwardly extends from the substrate Ridge, the ridge of the active medium are positioned between the flat area of the active medium,

The ridge of the active medium limits a part for the waveguide being located in the substrate, and the waveguide is configured to guiding light The ridge that signal passes through gain media；And

Isolated groove is extended in the flat area of the active medium and is spaced apart with the ridge of the active medium.

2. the apparatus according to claim 1, which is characterized in that the isolated groove and the waveguide are limited together by described in The periphery that a part for active parts surrounds.

3. the apparatus of claim 2, which is characterized in that the flat area of active medium described in the perimeter A part.

4. the apparatus according to claim 1, which is characterized in that one or more of described isolated groove each terminates in At two different locations in the waveguide and the isolated groove and the waveguide are limited together by active Jie The periphery that a part for the flat area of matter surrounds.

5. device according to claim 4, which is characterized in that one or more of isolated grooves, which extend through, described to be had Source medium.

6. the apparatus according to claim 1, which is characterized in that first in one or more of described isolated groove It terminates at two in the waveguide different locations,

First isolated groove and the waveguide limit in the flat area by the active medium first together The first periphery that a part surrounds,

Second in one or more of described isolated groove terminates at two in the waveguide different locations, with And

Second isolated groove and the waveguide limit in the flat area by the active medium second together The second periphery that a part surrounds.

7. device according to claim 6, which is characterized in that the isolated groove and the waveguide form the first periphery simultaneously And second isolated groove and the waveguide form the second periphery.

8. device according to claim 7, which is characterized in that first isolated groove and second isolated groove prolong Extend through the active medium.

9. device according to claim 8, which is characterized in that it is further included：The light transmission medium being positioned in the substrate, The transmission region includes ridge, flat area and underclad portion,

The ridge of the light transmission medium upwardly extends from the substrate and between the flat area of the light transmission medium,

The underclad portion of the light transmission medium is between the active medium and the substrate；And

First isolated groove and second isolated groove each extend through the underclad portion of the light transmission medium.

10. device according to claim 9, which is characterized in that first periphery and second periphery are positioned at described On the opposite side of the ridge of active medium and first periphery and second periphery combination have to be formed described in encirclement The combination periphery of source block.

11. a kind of method, including：

Executive device waveguide etches on device, and described device has light transmission medium in substrate, and described device waveguide is etched in Device for limiting waveguide in the light transmission medium；

To etch active medium on such devices, second is etched in the dress for execution unit waveguide etching on such devices The part for limiting component waveguide, described device waveguide and component waveguide alignment are put to become the difference of common waveguide Part, wherein, described device waveguide portion exchanges optical signal with the component waveguide portion；And

Form isolated groove on such devices, each isolated groove extend in the active medium and with active Jie The ridge of matter is spaced apart,

One or more of isolated grooves etch one or more etched with the component waveguide by being selected from described device waveguide A etching is completely or partially formed.

12. according to the method for claim 11, which is characterized in that the isolated groove and the waveguide are limited together by institute The periphery that at least part of active parts surrounds is stated, at least part of the active part, which has to be selected from, includes light sensing At least one of the group of device function and optical modulator function function.

13. according to the method for claim 12, which is characterized in that the isolated groove by described device waveguide etching and The component waveguide etches to be formed.

14. according to the method for claim 11, which is characterized in that perform described device waveguide etching and include etching institute simultaneously State active medium and the light transmission medium and quickly to etch the active medium than the light transmission medium at least twice.

15. according to the method for claim 11, which is characterized in that perform described device waveguide etching and be included in the light transmission The ridge of the light transmission medium is formed between the flat area of medium, and perform component waveguide etching be included in it is described active The ridge of active medium is formed between the flat area of medium.

16. according to the method for claim 15, which is characterized in that limit the light transmission during described device waveguide etches The same mask of medium limits the ridge of the active medium during the component waveguide etches.

17. according to the method for claim 15, which is characterized in that the flat area of active medium described in the perimeter A part.

18. according to the method for claim 15, which is characterized in that each self termination of one or more of described isolated groove At two different locations in the waveguide and cause the isolated groove limits together with the waveguide will be described active The periphery that a part for one of the flat area of medium surrounds.

19. according to the method for claim 15, which is characterized in that first in one or more of described isolated groove It is a to terminate at two in the waveguide different locations,

Second isolated groove and the waveguide limit in the flat area by the active medium second together The second periphery that a part surrounds and

First isolated groove and second isolated groove extend through the active medium.

20. according to the method for claim 19, which is characterized in that it is further included：The light transmission being positioned in the substrate is situated between Matter, the transmission region include ridge, flat area and underclad portion,

Wherein described first isolated groove and second isolated groove each extend through the lower floor of the light transmission medium Part.