CN104682369A - Direct current anti-reverse polarity circuit using MOS (metal oxide semiconductor) tube - Google Patents
Direct current anti-reverse polarity circuit using MOS (metal oxide semiconductor) tube Download PDFInfo
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- CN104682369A CN104682369A CN201310629950.6A CN201310629950A CN104682369A CN 104682369 A CN104682369 A CN 104682369A CN 201310629950 A CN201310629950 A CN 201310629950A CN 104682369 A CN104682369 A CN 104682369A
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Abstract
The invention discloses a direct current anti-reverse polarity circuit using an MOS (metal oxide semiconductor) tube. The direct current anti-reverse polarity circuit comprises a diode D1, a resistor R1, a voltage-regulator tube D2 and the MOS tube Q1, wherein the anode of the diode D1 is connected with an external power supply of a system, and the cathode of the diode D1 is connected with one end of the resistor R; the other end of the resistor R1 is connected with the cathode of the voltage-regulator tube D2 and the grid of the MOS tube Q1; the anode of the voltage-regulator tube D2 and the drain of the MOS tube Q1 are grounded; the source of the MOS tube Q1 is connected with the grounded end of the system. According to the direct current anti-reverse polarity circuit disclosed by the invention, by utilizing the turnon and turnoff characteristics of the MOS tube, a current loop is cut off after reverse polarity of input voltage, and the circuit protection goal is achieved.
Description
Technical field
The invention belongs to power technique fields, particularly a kind of direct current reverse-connection preventing circuit utilizing metal-oxide-semiconductor.
Background technology
Have many independently power modules in electronic system, the input of power module mainly distinguishes polarity by the mode of machinery or pattern identification, provides the scheme of directiveness.But this can not stop reversal connection phenomenon, and once reversal connection, then will inevitably damage input voltage port, the situation such as cause that power module burns.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of direct current reverse-connection preventing circuit utilizing metal-oxide-semiconductor, preventing from damaging system power supply module during input voltage error-polarity connection.
To achieve these goals, the technical solution used in the present invention is:
A kind of direct current reverse-connection preventing circuit utilizing metal-oxide-semiconductor, comprise diode D1, resistance R1, voltage-stabiliser tube D2 and metal-oxide-semiconductor Q1, wherein: diode D1 anode welding system external power source, one end of negative electrode connecting resistance R1, the negative electrode of another termination voltage-stabiliser tube D2 of resistance R1 and the grid of metal-oxide-semiconductor Q1, the anode of voltage-stabiliser tube D2 and the grounded drain of metal-oxide-semiconductor Q1, the source electrode welding system earth terminal of metal-oxide-semiconductor Q1.
Fuse F1 is also connected with between described external power source and system power supply input.
Compared with prior art, the present invention utilizes turning on and off of metal-oxide-semiconductor functionality, with regard to cut-off current loop after input voltage reverse connection, reaches the object of protective circuit.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Embodiments of the present invention are described in detail below in conjunction with drawings and Examples.
As shown in Figure 1, a kind of direct current reverse-connection preventing circuit utilizing metal-oxide-semiconductor, comprise fuse F1, diode D1, resistance R1, voltage-stabiliser tube D2 and metal-oxide-semiconductor Q1, wherein: fuse F1 is connected between external power source and system power supply input, diode D1 anode welding system external power source, one end of negative electrode connecting resistance R1, the negative electrode of another termination voltage-stabiliser tube D2 of resistance R1 and the grid of metal-oxide-semiconductor Q1, the anode of voltage-stabiliser tube D2 and the grounded drain of metal-oxide-semiconductor Q1, the source electrode welding system earth terminal of metal-oxide-semiconductor Q1.
In the present invention, when voltage just connects, Vin by D1 R1 after D2, the grid voltage of Q1 is remained in the voltage stabilizing level of D2, makes Q1 conducting, system worked well.
When electric voltage reverse-connection, the grid voltage of Q1 cannot be greater than source voltage, cannot conducting, and system does not power on.
In this kind of scheme, the reverse withstand voltage of Q1 must be selected to be greater than conventional input voltage, and the effect of F1 has in anti-locking system extremely to cause big current prime Vin to dragging down, if electric current is excessive, fuse F1 fuses, and Vin and pathological system is kept apart.
The effect of D1 is that when preventing reversal connection, electric current flow into Vin from GND by R1.
Claims (2)
1. one kind utilizes the direct current reverse-connection preventing circuit of metal-oxide-semiconductor, it is characterized in that, comprise diode D1, resistance R1, voltage-stabiliser tube D2 and metal-oxide-semiconductor Q1, wherein: diode D1 anode welding system external power source, one end of negative electrode connecting resistance R1, the negative electrode of another termination voltage-stabiliser tube D2 of resistance R1 and the grid of metal-oxide-semiconductor Q1, the anode of voltage-stabiliser tube D2 and the grounded drain of metal-oxide-semiconductor Q1, the source electrode welding system earth terminal of metal-oxide-semiconductor Q1.
2. the direct current reverse-connection preventing circuit utilizing metal-oxide-semiconductor according to claim 1, is characterized in that, be also connected with fuse F1 between described external power source and system power supply input.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310629950.6A CN104682369A (en) | 2013-11-28 | 2013-11-28 | Direct current anti-reverse polarity circuit using MOS (metal oxide semiconductor) tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310629950.6A CN104682369A (en) | 2013-11-28 | 2013-11-28 | Direct current anti-reverse polarity circuit using MOS (metal oxide semiconductor) tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104682369A true CN104682369A (en) | 2015-06-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310629950.6A Pending CN104682369A (en) | 2013-11-28 | 2013-11-28 | Direct current anti-reverse polarity circuit using MOS (metal oxide semiconductor) tube |
Country Status (1)
| Country | Link |
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| CN (1) | CN104682369A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711989A (en) * | 2017-03-09 | 2017-05-24 | 上海灵信视觉技术股份有限公司 | Anti-reverse connection circuit for input of direct-current power supply |
| CN111697816A (en) * | 2020-05-29 | 2020-09-22 | 广东浪潮大数据研究有限公司 | Power factor correction circuit, device and method |
-
2013
- 2013-11-28 CN CN201310629950.6A patent/CN104682369A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711989A (en) * | 2017-03-09 | 2017-05-24 | 上海灵信视觉技术股份有限公司 | Anti-reverse connection circuit for input of direct-current power supply |
| CN111697816A (en) * | 2020-05-29 | 2020-09-22 | 广东浪潮大数据研究有限公司 | Power factor correction circuit, device and method |
| CN111697816B (en) * | 2020-05-29 | 2022-04-15 | 广东浪潮大数据研究有限公司 | Power factor correction circuit, device and method |
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| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150603 |