CN104681685A - Light-emitting diode device and lamp - Google Patents
Light-emitting diode device and lamp Download PDFInfo
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- CN104681685A CN104681685A CN201310624537.0A CN201310624537A CN104681685A CN 104681685 A CN104681685 A CN 104681685A CN 201310624537 A CN201310624537 A CN 201310624537A CN 104681685 A CN104681685 A CN 104681685A
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- emitting diode
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- 239000013078 crystal Substances 0.000 claims abstract description 100
- 230000005540 biological transmission Effects 0.000 claims abstract description 10
- 239000002245 particle Substances 0.000 claims description 73
- 239000000463 material Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 30
- 229930091051 Arenine Natural products 0.000 claims description 2
- 238000001579 optical reflectometry Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 13
- 238000012545 processing Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000004575 stone Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000003353 gold alloy Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
- F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a light-emitting diode device and a lamp. The light-emitting diode device comprises a plurality of light-emitting diode crystal grains and a plurality of conducting wires. Each light-emitting diode crystal grain comprises a base plate which has light transmission, a light-emitting structure which is arranged on the base plate and can be controlled to emit a light ray, a reflecting mirror which has light reflectivity, is arranged on the surface, opposite to the base plate, of the light-emitting structure, and is electrically connected with the light-emitting structure, a first electrode which is at lease arranged on the reflecting mirror and is electrically connected with the reflecting mirror, and a second electrode which is at least arranged on the light-emitting structure and is electrically connected with the light-emitting structure. The conducting wires have wire diameters which are not less than 50 microns respectively, and further, and are connected with the first electrode and the second electrode of each light-emitting diode crystal grain respectively, so that the light-emitting diode crystal grains are connected in series, in parallel or in series parallel. The lamp comprises at least one light-emitting diode device and a package structure or a lamp cup.
Description
Technical field
The present invention relates to a kind of light-emitting diode assembly and light fixture, refer to a kind of light-emitting diode assembly and the light fixture that use crystal-coated light-emitting diodes especially.
Background technology
With regard to the encapsulation technology of current light-emitting diode, in order to the brightness of light-emitting diode will can be promoted and promote its radiating effect, flip-chip type package processing procedure (flip-chip package) usually can be adopted.Flip-chip type package processing procedure is towards circuit board by the positive electrode of crystal-coated light-emitting diodes (flip-chip LED) and negative electrode, and the circuit by die bond technology the positive electrode of light-emitting diode and negative electrode be connected to by scolding tin on circuit board, make the of heap of stone brilliant substrate (such as sapphire substrate) of crystal-coated light-emitting diodes towards the direction away from circuit board, and the light allowing the luminescent layer of light-emitting diode send irradiate toward the direction away from circuit board mainly through brilliant substrate of heap of stone.
But there are several shortcomings in above-mentioned flip-chip type package processing procedure.One, the die bond step of flip-chip type package processing procedure needs to carry out in high temperature (such as more than 200 degree Celsius) environment, high temperature process easily causes the speculum (mirror of light-emitting diode, the such as speculum of silver-colored material) damage, and affect light-emitting diode brightness performance.In addition, when light-emitting diode being arranged at circuit board by die bond processing procedure, the situation that scaling powder pollutes light-emitting diode may occur, and light-emitting diode also may drop from circuit board because scolding tin quality is bad, these problems can cause the low of process yield.On the other hand, positive electrode and negative electrode due to crystal-coated light-emitting diodes are directly connected with the circuit of circuit board, and therefore the line configuring of circuit board must coordinate the electrode design of light-emitting diode.That is, crystal-coated light-emitting diodes must be arranged on have specific circuit configuration circuit board on, this characteristic can limit its application elasticity.
Summary of the invention
The object of the present invention is to provide a kind of light-emitting diode assembly, the problem that this light-emitting diode assembly can avoid afore-said hot die bond processing procedure to cause, and have and preferably apply elasticity.
Light-emitting diode assembly of the present invention, comprises multiple LED crystal particle and many wires.Described LED crystal particle respectively comprises a substrate, tool light transmission; One ray structure, is arranged at this substrate, can controlledly emit beam; One speculum, tool light reflective, is located at the surface of this ray structure in contrast to this substrate, and is formed with this ray structure and be electrically connected; One first electrode, is at least located on this speculum, and is formed with this speculum and be electrically connected; And one second electrode, be at least located on this ray structure, and formed with this ray structure and be electrically connected.The wire diameter of described wire is respectively not less than 50 microns, and is connected to this first electrode and this second electrode of respectively this LED crystal particle, makes described LED crystal particle form series, parallel or connection in series-parallel connection.
Preferably, the wire range of described wire is 50 microns to 2 millimeters.
More preferably, respectively this first electrode of this LED crystal particle and the area summation of this second electrode are nine ten ten to percent 6 percent of the area ratio of this ray structure.
Furthermore, this light-emitting diode assembly also comprises at least one first conducting strip and at least one the second conducting strip, and this first conducting strip is electrically connected for wherein partly being formed of described wire with this second conducting strip.
Implement in aspect in part, described LED crystal particle also respectively comprises a fluorophor, and respectively this fluorophor includes fluorescent material and is at least located at the another side of this substrate in contrast to this ray structure.Or respectively this fluorophor also covers this ray structure, this speculum, this first electrode and this second electrode.
In one embodiment, this light-emitting diode assembly also comprises takes advantage of a year base material, and this is taken advantage of and carries a base material tool light transmission, and arranges on it for described LED crystal particle.
Preferably, this light-emitting diode assembly, also comprises a fluorescence structure, and this fluorescence structure includes fluorescent material and is at least located at this takes advantage of year base material in contrast to the another side of described LED crystal particle.
More preferably, this light-emitting diode assembly also comprises a reflective structure, this reflective structure tool light reflective and at least cover described LED crystal particle.
Another object of the present invention, at a kind of light fixture of proposition, this light fixture comprises at least one light-emitting diode assembly as the aforementioned and an encapsulating structure.This encapsulating structure tool light transmission, and arrange wherein for this light-emitting diode assembly.
The another kind of light fixture that the present invention proposes, comprises at least one light-emitting diode assembly as the aforementioned and a Lamp cup, and this Lamp cup is arranged wherein for this light-emitting diode assembly, and converges the light that this light-emitting diode assembly sends.
Beneficial effect of the present invention is: by the first electrode of LED crystal particle, the area size design of the second electrode, and the wire diameter of wire is selected, the LED crystal particle of crystal covering type consists of wire and must not need to take advantage of the lighting device carrying base material, therefore the elasticity in use can be promoted, and the damage that high temperature die bond processing procedure causes can be avoided, and the making of various light fixture can be applied to.
Accompanying drawing explanation
Fig. 1 is a schematic top plan view, and the first preferred embodiment of light-emitting diode assembly of the present invention is described;
Fig. 2 is the schematic side view of the first preferred embodiment of this light-emitting diode assembly;
Fig. 3 is a schematic top plan view, and the enforcement aspect of LED crystal particle of the present invention is described;
Fig. 4 is the schematic side view of this LED crystal particle;
Fig. 5 is the change aspect of the first preferred embodiment of light-emitting diode assembly, and LED crystal particle is wherein for being connected in parallel;
Fig. 6 is the change aspect of the first preferred embodiment of light-emitting diode assembly, and LED crystal particle is wherein for being connected in parallel;
Fig. 7 is the change aspect of the first preferred embodiment of light-emitting diode assembly, and LED crystal particle is wherein that connection in series-parallel connects;
Fig. 8 is the change aspect of the first preferred embodiment of light-emitting diode assembly, and LED crystal particle is wherein that connection in series-parallel connects;
Fig. 9 to Figure 11 is the enforcement aspect that the light-emitting diode assembly of the first preferred embodiment is applied as light fixture;
Figure 12 is a schematic top plan view, and the second preferred embodiment of light-emitting diode assembly of the present invention is described; And
Figure 13 is the schematic side view of the second preferred embodiment of this light-emitting diode assembly.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail.
Aforementioned and other technology contents, feature and effect for the present invention, in the detailed description of following cooperation with reference to graphic two preferred embodiments, can clearly present.
Before the present invention is described in detail, should be noted that in the following description content, similar assembly represents with identical numbering.
Consulting Fig. 1 to Fig. 4, is the first preferred embodiment of light-emitting diode assembly 1 of the present invention.Light-emitting diode assembly 1 comprises multiple LED crystal particle 2, many wire 3,1 first conducting strips 4 and one second conducting strip 5, LED crystal particle (LED die) 2 is formed by wire 3 to be connected in series herein, and the LED crystal particle 2 being positioned at two ends is connected to the first conducting strip 4 and the second conducting strip 5, and form a kind of light-emitting diode assembly 1 of similar lamp string (string light).
LED crystal particle 2 in light-emitting diode assembly 1 belongs to crystal-coated light-emitting diodes crystal grain, respectively comprises substrate 21, ray structure 22, speculum 23, insulation system 24,1 first electrode 25,1 second electrode 26 and a fluorophor 27.The blue light-emitting diode that following description will be for gallium nitride (GaN); the structure of LED crystal particle 2 is described; but infrared light-emitting diode crystal grain, red light-emitting diode crystal grain or Yellow light emitting diode crystal grain that the LED crystal particle 2 of the present embodiment also can use the various materials such as GaAs (GaAs), gallium arsenide phosphide (GaAsP), arsenic calorize gallium (GaAlAs), phosphorus calorize gallium indium (AlGaInP) to make, the LED crystal particle 2 that therefore the present embodiment adopts is not limited with particular type.
The substrate 21 tool light transmission of LED crystal particle 2, for making the of heap of stone brilliant substrate (epitaxial substrate) that uses of ray structure 22, be also subsequently through manufacture of semiconductor fabrication techniques speculum 23, insulation system 24, first electrode 25 and one second electrode 26 is isostructural takes advantage of carried base board.With gallium nitride based LED crystal particle; substrate 21 often can use sapphire substrate (sapphire substrate); and substrate 21 promotes the brightness of LED crystal particle 2 by surface coarsening process (surface roughening); or promote crystalloid amount of heap of stone afterwards through being processed as patterned sapphire substrate (patterned sapphire substrate, referred to as PSS).
The ray structure 22 of LED crystal particle 2 is arranged on substrate 21, can controlledly emit beam, for being made in the light-emitting film structure on substrate 21 by crystal technique of heap of stone, it from top to bottom can divide into the first semiconductor layer 221, main light emission layer 222 and the second semiconductor layer 223, and by etch process process, outside the subregion of the second semiconductor layer 223 is exposed to, so that the setting of the second electrode 26.With gallium nitride based blue light-emitting diode crystal grain, the main material of the first semiconductor layer 221 is P type gallium nitride, it is multiple quantum trap (the multi-quantum well of main material that main light emission layer 222 is formed with gallium nitride, referred to as MQW) structure, the main material of the second semiconductor layer 223 is then n type gallium nitride.
The speculum 23 of LED crystal particle 2 is made with the material of the excellent light reflective of tool and (is such as done with silver or aluminum, but not as limit), it is located at the surface surface of first semiconductor layer 221 (speak by the book be) of ray structure 22 in contrast to substrate 21, and formed with ray structure 22 and be electrically connected, and the light that past speculum 23 direction that ray structure 22 can be sent is irradiated, transfer to after reflection and mainly irradiating towards the direction of substrate 21, most of light that LED crystal particle 2 is sent is appeared by substrate 21.
The main part surface extending to speculum 23 from the first semiconductor layer 221, main light emission layer 222 and the second semiconductor layer 223 through etched side wall surface of insulation system 24 of LED crystal particle 2, its can adopt silicon dioxide etc. be electrically insulated material make, to be formed with the P-N junction (P-N junction) of ray structure 22 be electrically connected to block the second electrode 26, and block the second electrode 26 and formed with speculum 23 and be electrically connected, to avoid leaking electricity, the problem of short circuit occurs.
First electrode 25 of LED crystal particle 2 is located on speculum 23, and is formed with speculum 23 and be electrically connected, and uses using the positive electrode as LED crystal particle 2.In virtual condition, speculum 23 can not cover all surface of the first semiconductor layer 221 usually, so the first electrode 25 also may be covered to the first semiconductor layer 221.In the present embodiment, it is gold alloy or the sandwich construction of main material that the first electrode 25 uses with gold, but the first electrode 25 also can use other materials to make, and is not limited with gold.
Second electrode 26 of LED crystal particle 2 is located on ray structure 22, and is formed with ray structure 22 and be electrically connected.Specifically, the second electrode 26 is arranged at the second semiconductor layer 223 through etch processes place, and up extend to insulation system 24, and itself and the second semiconductor layer 223 are formed and be electrically connected, and use using the negative electrode as LED crystal particle 2.In the present embodiment, it is gold alloy or the sandwich construction of main material that the second electrode 26 also uses with gold, but similarly the second electrode 26 also can use other materials to make, and is not limited with gold.
The fluorophor 27 of LED crystal particle 2 includes fluorescent material and is located at the another side of substrate 21 in contrast to ray structure 22, it is subject to producing fluorescent radiation after light that ray structure 22 sends irradiates, after the light that ray structure 22 sends and fluorescence mixed light, the light of different colours can be shown.With gallium nitride based blue light-emitting diode crystal grain, the light that ray structure 22 sends is blue light.If the fluorescent material that fluorophor 27 inside uses adopts yellow fluorescent powder, then can present white light after blue light and gold-tinted mixed light and radiate, and can apply as general illumination.But fluorophor 27 can not only the exiting surface of covered substrate 21, and can also cover ray structure 22, speculum 23, first electrode 25 and the second electrode 26 further, namely formed all-in-one-piece coated, this is also the application aspect that the present invention can implement according to this.Illustrate, according to actual illumination demand, LED crystal particle 2 also can not arrange fluorophor 27, and the glow color of LED crystal particle 2 is the color that ray structure 22 produces light in the case.
According to the structural design of above-mentioned LED crystal particle 2, the light-emitting diode assembly 1 of the present embodiment is connected the first electrode 25 and the second electrode 26 of adjacent LED crystal grain 2 by wire 3, positive electrode between LED crystal particle 2 is connected with negative electrode, and formation is connected in series.
On the other hand, in the present embodiment, light-emitting diode assembly 1 uses crystal-coated light-emitting diodes crystal grain 2 to be can't help the characteristic of electrode side bright dipping by substrate 21 side bright dipping, the area of the first electrode 25 and the second electrode 26 is increased as far as possible, and by the wire 3 connecting luminous diode crystal grain 2 of the comparatively thick not easy fracture of wire diameter.Accordingly, carried base board is taken advantage of to load LED crystal particle 2 even if the light-emitting diode assembly of the present embodiment 1 does not use, user is actual uses the problem being also less likely to occur wire 3 fracture during the light-emitting diode assembly 1 of class lamp-chain type, and therefore design of the present invention can promote the tolerance of light-emitting diode assembly 1 really.
Preferably implementing in aspect, first electrode 25 of LED crystal particle 2 and the area summation of the second electrode 26 are between nine ten ten to percent 6 percent of the area ratio of its ray structure 22, and the wire diameter of wire 3 coordinates the area of the first electrode 25 and the second electrode 26, wire range is 50 microns to 2 millimeters.Have about the first electrode 25, second electrode 26, ray structure 22 can with reference to the example of table 1 with the size design of wire 3.But be noted that the size design in table 1 is only the explanation of the present embodiment, practical range of the present invention should do not limited with this.
Table 1
In the enforcement aspect of earlier figures 1, Fig. 2, the LED crystal particle 2 of the light-emitting diode assembly 1 of the present embodiment is formed by wire 3 to be connected in series, but implement in aspect in the difference of the present embodiment, the LED crystal particle 2 of light-emitting diode assembly 1 also can be formed by wire 3 and be connected in parallel or connection in series-parallel connection.
Consult Fig. 5, Fig. 6, first electrode 25 of LED crystal particle 2 described herein is connected continuously by one group of wire 3, and the second electrode 26 is connected continuously by another group wire 3, the first electrode 25, second electrode 26 being positioned at the LED crystal particle 2 at two ends is connected to the first conducting strip 4, second conducting strip 5 by wire 3 again, and makes this LED crystal particle 2 form the connection aspect be connected in parallel.
Consult Fig. 7, be positioned at a string LED crystal particle 2 is formed by wire 3 to be connected in parallel aspect herein, and to be formed with the LED crystal particle 2 of contiguous serial by the first conducting strip 4, second conducting strip 5 and be connected in series, and make the LED crystal particle 2 in light-emitting diode assembly 1 form series-parallel connection aspect.
Consult Fig. 8, first electrode 25, second electrode 26 of LED crystal particle 2 described herein is interconnected by wire 3, LED crystal particle 2 LED crystal particle 2 adjacent thereto is made to form the annexation of serial or parallel connection respectively, and first conducting strip 4, second conducting strip 5 at LED crystal particle 2 two ends forms electrical connection for the wherein part of described wire 3, and form the light-emitting diode assembly 1 that inner LED crystal particle 2 connection in series-parallel connects.
Consult Fig. 9 to Figure 11, according to the description of earlier figures 1 to Fig. 8, light-emitting diode assembly 1 can be applicable to the making of various light fixture 100.
Consult Fig. 9, light fixture 100 comprises light-emitting diode assembly 1 and an encapsulating structure 7 herein, this encapsulating structure 7 tool light transmission, and arranges wherein for this light-emitting diode assembly 1.Such as, encapsulating structure 7 can be the glass tube that diameter is slightly coarser than light-emitting diode assembly 1 (as 2 millimeters), in light-emitting diode assembly 1 is coated on by it, and can as the application in various lamp source.Certainly, in the specific implementation, light fixture 100 can comprise two light-emitting diode assemblies 1.
Consult Figure 10, light fixture 100 comprises light-emitting diode assembly 1 and a Lamp cup 8 herein, Lamp cup 8 is arranged wherein (focus being such as located at its reflection paraboloid) for this light-emitting diode assembly 1, and converge light that this light-emitting diode assembly 1 sends and irradiate in outward, can be used as general lighting equipment use.
Consult Figure 11, light fixture 100 comprises two light-emitting diode assemblies 1 and a Lamp cup 8 herein, this Lamp cup 8 arranges wherein for this light-emitting diode assembly 1, the light-emitting area (i.e. the substrate 21 of LED crystal particle 2) of these two light-emitting diode assemblies 1 is toward the outer side and in the face of Lamp cup 8, the light that therefore LED crystal particle 2 sends can be converged by Lamp cup 8 and irradiate in outward.Certainly, in the specific implementation, light fixture 100 can comprise this light-emitting diode assembly 1 one or more.
According to aforementioned explanation, in the first embodiment, light-emitting diode assembly 1 by the area maximization design of the first electrode 25, second electrode 26 of crystal-coated light-emitting diodes crystal grain 2, and can use the wire 3 in thick line footpath to form electric connection.Accordingly, the light-emitting diode assembly 1 of the present embodiment does not need to use circuit board to perform luminous lighting function, and can be used as point-source of light, line source, area source use, has good use elasticity.On the other hand, the light-emitting diode assembly 1 of the present embodiment need via die bond fabrication process, the problem that high temperature die bond processing procedure can be avoided to cause, and can improve the performance of light-emitting diode assembly 1 and manufacture qualification rate.
Consulting Figure 12, Figure 13, is the second preferred embodiment of light-emitting diode assembly 1 of the present invention.Compared to the first preferred embodiment, the light-emitting diode assembly 1 of the second preferred embodiment also comprises takes advantage of year base material 6, fluorescence structure 61 and a reflective structure 62.Take advantage of and carry base material 6 tool light transmission, and arrange on it for described LED crystal particle 2, wire 3, first conducting strip 4 and the second conducting strip 5.Fluorescence structure 61 includes fluorescent material and is at least located at this takes advantage of year base material 6 in contrast to the another side of described LED crystal particle 2, can adjust the glow color of light-emitting diode assembly 1 according to this.Reflective structure 62 tool light reflective and at least cover described LED crystal particle 2, such as, can be solidified by reflectorised paint and form, and contributes to light toward taking advantage of the direction reflection of carrying base material 6.But in different enforcement aspects, light-emitting diode assembly 1 also can not arrange fluorescence structure 61 or reflective structure 62, therefore its enforcement aspect is not limited with certain content.
According to foregoing, LED crystal particle 2, wire 3, first conducting strip 4 and the second conducting strip 5 are arranged to take advantage of and carry on base material 6 by the second preferred embodiment of the present invention, can promote overall construction intensity further.Compared with the existing crystal-coated light-emitting diodes needing to use circuit board, what the present embodiment used takes advantage of year base material 6 need not form corresponding connection line in the position of the first electrode 25, second electrode 26 of LED crystal particle 2, therefore spendable year base material 6 type of taking advantage of has larger elasticity, and light-emitting diode assembly 1 does not need, by high temperature die bond fabrication process, can promote its performance and process yield equally.
What illustrate is, in the second preferred embodiment, although the connection aspect of LED crystal particle 2 illustrates in a series arrangement, but the connection aspect of LED crystal particle 2 can as aforementioned first preferred embodiment, form various series, parallel or connection in series-parallel connection by wire 3, and be not limited in the mode that is connected in series herein.
Comprehensively above-mentioned two embodiments, light-emitting diode assembly 1 of the present invention is by the area maximization design of the first electrode 25, second electrode 26 of LED crystal particle 2, and the wire diameter of wire 3 is selected, allow crystal-coated light-emitting diodes crystal grain 2 be formed by wire 3 must not need to take advantage of the lighting device carrying base material 6, therefore the elasticity in use can be promoted, apply to the making of various light fixture 100, and the damage that high temperature die bond processing procedure causes can be avoided, therefore light-emitting diode assembly 1 of the present invention can reach object of the present invention really.
As described above, be only preferred embodiment of the present invention, when not limiting scope of the invention process with this, the simple equivalence namely generally done according to the present patent application claims and patent specification content changes and modifies, and all still belongs to the scope that the present invention is contained.
Claims (11)
1. a light-emitting diode assembly, is characterized in that, this light-emitting diode assembly comprises:
Multiple LED crystal particle, respectively comprises
One substrate, tool light transmission,
One ray structure, is arranged at this substrate, can controlledly emit beam,
One speculum, tool light reflective, is located at the surface of this ray structure in contrast to this substrate, and is formed with this ray structure and be electrically connected,
One first electrode, is at least located on this speculum, and is formed with this speculum and be electrically connected, and
One second electrode, is at least located on this ray structure, and is formed with this ray structure and be electrically connected; And
Many wires, wire diameter is respectively not less than 50 microns, and is connected to this first electrode and this second electrode of respectively this LED crystal particle, makes described LED crystal particle form series, parallel or connection in series-parallel connection.
2. light-emitting diode assembly according to claim 1, is characterized in that: the wire range of described wire is 50 microns to 2 millimeters.
3. light-emitting diode assembly according to claim 1, is characterized in that: respectively this first electrode of this LED crystal particle and the area summation of this second electrode are nine ten ten to percent 6 percent of the area ratio of this ray structure.
4. light-emitting diode assembly according to claim 1, it is characterized in that: this light-emitting diode assembly also comprises at least one first conducting strip and at least one the second conducting strip, this first conducting strip is electrically connected for wherein partly being formed of described wire with this second conducting strip.
5. light-emitting diode assembly according to claim 1, is characterized in that: described LED crystal particle also respectively comprises a fluorophor, and respectively this fluorophor includes fluorescent material and is at least located at the another side of this substrate in contrast to this ray structure.
6. light-emitting diode assembly according to claim 5, is characterized in that: respectively this fluorophor also covers this ray structure, this speculum, this first electrode and this second electrode.
7. light-emitting diode assembly according to claim 1, is characterized in that: this light-emitting diode assembly also comprises takes advantage of a year base material, and this is taken advantage of and carries a base material tool light transmission, and arranges on it for described LED crystal particle.
8. light-emitting diode assembly according to claim 7, is characterized in that: this light-emitting diode assembly also comprises a fluorescence structure, and this fluorescence structure includes fluorescent material and is at least located at this takes advantage of year base material in contrast to the another side of described LED crystal particle.
9. light-emitting diode assembly according to claim 7, is characterized in that: this light-emitting diode assembly also comprises a reflective structure, this reflective structure tool light reflective and at least cover described LED crystal particle.
10. a light fixture, is characterized in that, this light fixture comprises:
At least one light-emitting diode assembly as claimed in any one of claims 1-9 wherein; And
One encapsulating structure, tool light transmission, and arrange wherein for this light-emitting diode assembly.
11. 1 kinds of light fixtures, is characterized in that, this light fixture comprises:
At least one light-emitting diode assembly as claimed in any one of claims 1-9 wherein; And
One Lamp cup, is arranged wherein for this light-emitting diode assembly, and converges the light that this light-emitting diode assembly sends.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310624537.0A CN104681685A (en) | 2013-11-28 | 2013-11-28 | Light-emitting diode device and lamp |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310624537.0A CN104681685A (en) | 2013-11-28 | 2013-11-28 | Light-emitting diode device and lamp |
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| CN104681685A true CN104681685A (en) | 2015-06-03 |
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| CN201310624537.0A Pending CN104681685A (en) | 2013-11-28 | 2013-11-28 | Light-emitting diode device and lamp |
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