CN104681652A - Flip multi-junction solar cell and preparation method thereof - Google Patents
Flip multi-junction solar cell and preparation method thereof Download PDFInfo
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- CN104681652A CN104681652A CN201510120197.7A CN201510120197A CN104681652A CN 104681652 A CN104681652 A CN 104681652A CN 201510120197 A CN201510120197 A CN 201510120197A CN 104681652 A CN104681652 A CN 104681652A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a flip multi-junction solar cell and a preparation method thereof. The flip multi-junction solar cell comprises a top cell, 0-5 intermediate cells and a bottom cell, wherein the top cell, the intermediate cells and the bottom cell are connected through tunneling junctions; a transparent substrate is bonded on the top cell; the preparation method comprises the following steps: (1) growing epitaxial wafers of a multi-junction solar cell, wherein the epitaxial wafers are a first substrate, a buffer layer, a corrosion barrier layer, a first cap layer, the bottom cell, the intermediate cell and the top cell in sequence from bottom to top; (2) bonding a transparent substrate on the top cell; (3) corroding the first substrate, the buffer layer and the corrosion barrier layer; (4) evaporating metal, and performing photoetching on the metal to form an electrode pattern; (5) alloying the electrode pattern; (6) evaporating an insulated protection layer on the bottom cell; (7) cutting and packaging. According to the invention, the bonded transparent substrate, flip solar cells, downward electrodes and the transparent substrate surface are used for receiving solar spectrum; one part of the electrodes for blocking sunlight can be effectively used, so that the efficiency of solar cells is effectively improved.
Description
Technical field
The present invention relates to a kind of upside-down mounting multijunction solar cell and preparation method thereof, belong to solar-photovoltaic technology field.
Background technology
Along with people in recent years to the attention of new regenerative resource, especially MOCVD(MOCVD method) fast development of technology, iii-v solar cell is because its efficiency is considerably beyond Si based solar battery, and current iii-v solar cell instead of traditional Si based solar battery and has been applied to the spacecraft energy.Can predict, in the near future, III-V solar cell will be widely used in civil equipment.How to promote efficiency of solar cell, reduce costs, become the focus of people's research.Solar cell, to effective utilization of solar spectrum, determines the efficiency of solar cell, and the design of electrode is the factor of can not ignore, and general electrode design occupies the 5%-10% of solar cell area, and therefore this part sunlight is blocked, and can not be utilized by solar cell.Effectively utilizing this part spectrum, is also the key factor that research promotes efficiency of solar cell.
Chinese patent literature CN103367465A disclosed " a kind of multijunction solar cell having metallic mirror and preparation method thereof ", multijunction solar cell structure makes the ohmic contact current channel of localized contact, second cap layer in other region is removed, prepares transparent conductive medium material and evaporation metal speculum, barrier metal layer and bond wire successively.Adopt bonding techniques, by wafer bonding on the second substrate, remove the epitaxial wafer after the first substrate and carry out electrode evaporation, photoetching electrode pattern, carry out alloy after removing the second unnecessary cap layer, then evaporation antireflective coating, makes electrode pattern by lithography simultaneously, last evaporation back metal, carries out alloy.Above-mentioned multijunction solar cell belongs to the upside-down mounting of solar structure, cannot realize flip-chip packaged, make full use of solar spectrum.
CN101882645B disclosed " having the inverted multijunction solar cells of IV race alloy ", comprises and provides growth substrates; In described growth substrates, deposition forms the sequence of the semiconductor material layer of solar cell, and it comprises at least one the sub-battery be made up of iii-v alloy and at least one the sub-battery be made up of IV race alloy; And remove described Semiconductor substrate.This multijunction solar cell is growth inverted multijunction solar cell, and gate electrode line can stop sunlight, hinders the lifting of efficiency of solar cell.
CN101499495B disclosed " the heterogeneous knot battery in inverted metamorphic multijunction solar battery ", described solar cell comprises upper sub-cell, the sub-battery of the sub-battery in middle part and bottom, and described method comprises: provide the first substrate for the epitaxial growth of semi-conducting material; Form top first solar subcells over the substrate, it has the first band gap; Above described first solar subcells, form middle part the second solar subcells, it has the second band gap being less than described first band gap; Above described second sub-battery, form grading interlayer, described grading interlayer has the 3rd band gap being greater than described second band gap; And above described grading interlayer, form bottom the 3rd solar subcells, it has the 4th band gap being less than described second band gap, make described 3rd sub-battery relative to described second sub-battery lattice mismatch, at least one in wherein said solar subcells has heterojunction base-emitter layer.This heterogeneous knot battery belongs to the upside-down mounting of solar structure, mainly realizes the structure growth of sub-battery between solar cell, grows this constructive difficulty larger.
Summary of the invention
The present invention is directed to the occlusion issue of existing solar cel electrode to solar spectrum, propose a kind of to avoid the upside-down mounting multijunction solar cell of blocking of electrode pair sunlight, a kind of preparation method of this solar cell is provided simultaneously.
The present invention, in multijunction solar cell structure, adopts the transparent bonding techniques of transparent substrates, by wafer bonding on the second substrate, then by the first substrate removal.The epitaxial wafer removed after the first substrate is carried out electrode evaporation, photoetching electrode pattern, after removing the second unnecessary cap layer, carry out alloy simultaneously.
Upside-down mounting multijunction solar cell of the present invention, by the following technical solutions:
This upside-down mounting multijunction solar cell, comprise top battery, 0-5 middle battery and end battery, described top battery, middle battery are connected with tunnel junctions with end battery, and the band gap of top battery is greater than the band gap of middle battery, the band gap of middle battery is greater than the band gap of end battery, and battery top, top is electrode; Top battery is bonded with transparent substrates.Upside-down mounting uses, and there is not blocking of electrode pair solar spectrum, effectively can utilize solar spectrum.
Described transparent substrates is GaN or SiC etc.
Multijunction solar cell is called double-junction solar battery (middle battery is 0), three-joint solar cell (middle battery is 1), four-junction solar cell (middle battery is 2), five-junction solar cell (middle battery is 3), six joint solar cells (middle battery is 4) and seven joint solar cells (middle battery is 5) by the quantity according to middle battery.Connect with tunnel junctions between battery in several, be referred to as middle battery.
The material of top battery, middle battery and end battery all adopts the material of existing iii-v solar cell.
Above-mentioned upside-down mounting multijunction solar cell preparation method, comprises the steps:
(1) metal organic chemical vapor deposition (MOCVD) method growth multijunction solar cell epitaxial wafer is adopted, the structure of epitaxial wafer is followed successively by the first substrate, resilient coating, corrosion barrier layer, the first cap layer, end battery, middle battery and top battery from bottom to top, and top battery, middle battery are respectively connected with tunnel junctions with end battery; The band gap of top battery is greater than the band gap of middle battery, and the band gap of middle battery is greater than the band gap of end battery;
(2) pushing up on battery by transparent bonded layer bonding transparent substrates (transparent substrates can use GaN, SiC etc.);
(3) the first substrate, resilient coating and corrosion barrier layer is eroded;
(4) evaporation metal on the new interface eroded away in step (3), photoetching forms electrode pattern, erodes the first unnecessary cap layer under electrode simultaneously;
(5) complete to photoetching in step (4) electrode pattern carries out alloy;
(6) evaporation insulating protective layer on end battery;
(7) cut, encapsulation, make solar cell.
The method above-mentioned according to the present invention, is preferably as follows:
The first substrate in step (1) is GaAs substrate, and the transparent substrates (the second substrate) in step (2) is GaN or SiC.
Bonding pressure in step (2) is 1000kg-2000kg, and the time is 30-60 minute.
Transparent bonded layer in step (2) selects the transparent bonding materials such as epoxy resin, can be electrically conducting transparent glue or transparent insulation glue.
The corrosive liquid of corrosion in step (3) adopts the 3:1:5 preparation by volume of hydrogen peroxide, ammoniacal liquor and water, etching time 20-60 minute
.
In step (4), the metal of evaporation selects the one or more combination in Ti, Ge, Au, Pt and Ni.
Alloy temperature in step (5) is 300-500 DEG C, and the alloy time is 10-20 minute.
Do not elaborate in technique scheme and limit, all with reference to the prior art of iii-v solar cell.
The present invention directly utilizes transparent bonded layer bonding transparent substrates, encapsulate in upside-down mounting mode, adopt bonding transparent substrates, upside-down mounting solar cell, upside-down mounting rear electrode is downward, and transparent substrates face receives solar spectrum, avoids and the blocking of traditional design electrode pair sunlight, effectively can utilize the part of blocking of electrode pair sunlight in conventional cell designs, effectively improve efficiency of solar cell; There is the advantage that exploitativeness is strong, simple to operate, practical, and the method is not limited to the use of III-V solar cell, is equally applicable to the solar cell of Si base.
Accompanying drawing explanation
Fig. 1 is the structural representation of three-joint solar cell epitaxial wafer.
Fig. 2 is the structural representation of upside-down mounting three-joint solar cell prepared by the present invention.
Fig. 3 is the structural representation with the upside-down mounting three-joint solar cell of metallic mirror prepared by the present invention.
Embodiment
The present invention, in multijunction solar cell structure, adopts the transparent bonding techniques of transparent substrates, by wafer bonding on the second substrate, then by the first substrate removal.The epitaxial wafer removed after the first substrate is carried out electrode evaporation, photoetching electrode pattern, after removing the second unnecessary cap layer, carry out alloy simultaneously.
To prepare upside-down mounting GaInP/GaAs/InGaNAs three-joint solar cell, describe preparation method of the present invention in detail.
(1) metal organic chemical vapor deposition (MOCVD) method growth GaInP/GaAs/InGaNAs three-joint solar cell epitaxial wafer is adopted, epitaxial slice structure as shown in Figure 1, comprise the first substrate GaAs, resilient coating, corrosion barrier layer, cap layer, end battery InGaNAs, middle battery GaAs and top battery GaIn from bottom to top, end battery, middle battery are connected with tunnel junctions with top battery.The band gap of top battery is greater than the band gap of middle battery, and the band gap of middle battery is greater than the band gap of end battery.
(2) solar battery epitaxial wafer that grows of cleaning step (1), removes surface organic matter and dirt, applies transparent bonded layer electrically conducting transparent glue or transparent insulation glue such as () epoxy resin, as shown in Figure 2 at top battery surface.
(3) bonding transparent substrates (the second substrate can use GaN, SiC etc.) on transparent bonded layer, bonding pressure is 1000kg-2000kg, and the time is 30-60 minute; As shown in Figure 2.
(4) adopt wet etching to remove the first substrate, resilient coating and corrosion barrier layer, corrosive liquid adopts the 3:1:5 preparation by volume of hydrogen peroxide, ammoniacal liquor and water, etching time 20-60 minute.As shown in Figure 2.
(5) the interface litho pattern after eroding the first substrate, resilient coating and corrosion barrier layer, utilizes dry etch technique to etch into top battery; As shown in Figure 2.
(6) whirl coating, utilizes photoresist photoetching electrode pattern to corrode, and the mass ratio of evaporation GeAu(Ge is 2-10%), form both positive and negative polarity, thickness 0.7 micron, peel off and form electrode pattern, remove photoresist and remove the first unnecessary cap layer simultaneously.As shown in Figure 2.The metal of evaporation can select the combination of a kind of or any several arbitrary proportion in Ti, Ge, Au, Pt and Ni.
(7) complete to photoetching in step (6) electrode pattern carries out alloy, 300-500 DEG C, and the alloy time is 10-20 minute.
(8) evaporation insulating protective layer on end battery, insulating protective layer adopts SiO
2or silicon nitride, thickness 3500 dust.
(9) by techniques such as prior art cutting, encapsulation, solar cell is made.
Finally prepare upside-down mounting GaInP/GaAs/InGaNAs three-joint solar cell as shown in Figure 2, light utilization efficiency can improve about 4%.
If evaporation metal speculum again after above-mentioned steps (8) evaporation insulating protective layer, will obtain the upside-down mounting three-joint solar cell with metallic mirror as shown in Figure 3, make the light utilization efficiency of solar cell can improve about 5%.Metallic mirror uses the material of the high reflectances such as Au, Ag, Pt.
Claims (7)
1. a upside-down mounting multijunction solar cell, comprises top battery, 0-5 middle battery and end battery, it is characterized in that, top battery, middle battery are connected with tunnel junctions with end battery, the band gap of top battery is greater than the band gap of middle battery, and the band gap of middle battery is greater than the band gap of end battery, and battery top, top is electrode; Top battery is bonded with transparent substrates, and upside-down mounting uses, and there is not blocking of electrode pair solar spectrum, effectively can utilize solar spectrum.
2. upside-down mounting multijunction solar cell according to claim 1, is characterized in that, described transparent substrates is GaN or SiC.
3. a preparation method for upside-down mounting multijunction solar cell described in claim 1, is characterized in that, comprise the steps:
(1) grow multijunction solar cell epitaxial wafer, the structure of epitaxial wafer is followed successively by the first substrate, resilient coating, corrosion barrier layer, the first cap layer, end battery, middle battery and top battery from bottom to top, and top battery, middle battery are respectively connected with tunnel junctions with end battery; The band gap of top battery is greater than the band gap of middle battery, and the band gap of middle battery is greater than the band gap of end battery;
(2) pushing up on battery by transparent bonded layer bonding transparent substrates;
(3) the first substrate, resilient coating and corrosion barrier layer is eroded;
(4) evaporation metal on the new interface eroded away in step (3), photoetching forms electrode pattern, erodes the first unnecessary cap layer under electrode simultaneously;
(5) complete to photoetching in step (4) electrode pattern carries out alloy;
(6) evaporation insulating protective layer on end battery;
(7) cut, encapsulation, make solar cell.
4. the preparation method of upside-down mounting multijunction solar cell according to claim 3, is characterized in that, the first substrate in described step (1) is GaAs substrate, and the transparent substrates in step (2) is GaN or SiC.
5. the preparation method of upside-down mounting multijunction solar cell according to claim 3, is characterized in that, the bonding pressure in described step (2) is 1000kg-2000kg, and the time is the time is 30-60 minute.
6. the preparation method of upside-down mounting multijunction solar cell according to claim 3, is characterized in that, the corrosive liquid of corrosion in described step (3) adopts the 3:1:5 preparation by volume of hydrogen peroxide, ammoniacal liquor and water, etching time 20-60 minute.
7. the preparation method of upside-down mounting multijunction solar cell according to claim 3, is characterized in that, the alloy temperature in described step (5) is 300-500 DEG C, and the alloy time is 10-20 minute.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI816357B (en) * | 2022-04-08 | 2023-09-21 | 長庚大學 | Solar cell module and manufacturing method thereof |
| CN117293230A (en) * | 2023-11-24 | 2023-12-26 | 南昌凯迅光电股份有限公司 | Gallium arsenide solar cell with omnibearing metal reflector and preparation method thereof |
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| CN102324443A (en) * | 2011-09-21 | 2012-01-18 | 中国电子科技集团公司第十八研究所 | Inverted triple-junction InGaN solar cell |
| CN103367465A (en) * | 2012-03-29 | 2013-10-23 | 山东华光光电子有限公司 | Multi-junction solar cell with metal reflector and preparation method thereof |
| TW201436266A (en) * | 2012-11-16 | 2014-09-16 | Solar Junction Corp | Multijunction solar cells |
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2015
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20100089449A1 (en) * | 2006-07-03 | 2010-04-15 | Lg Electronics Inc. | High efficiency solar cell and manufacturing method thereof |
| CN102222708A (en) * | 2010-04-16 | 2011-10-19 | 江苏百世德太阳能高科技有限公司 | A novel triple-silicon thin film solar cell with high efficiency |
| CN102324443A (en) * | 2011-09-21 | 2012-01-18 | 中国电子科技集团公司第十八研究所 | Inverted triple-junction InGaN solar cell |
| CN103367465A (en) * | 2012-03-29 | 2013-10-23 | 山东华光光电子有限公司 | Multi-junction solar cell with metal reflector and preparation method thereof |
| TW201436266A (en) * | 2012-11-16 | 2014-09-16 | Solar Junction Corp | Multijunction solar cells |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI816357B (en) * | 2022-04-08 | 2023-09-21 | 長庚大學 | Solar cell module and manufacturing method thereof |
| CN117293230A (en) * | 2023-11-24 | 2023-12-26 | 南昌凯迅光电股份有限公司 | Gallium arsenide solar cell with omnibearing metal reflector and preparation method thereof |
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Application publication date: 20150603 |