CN104681430B - A kind of preparation method for improving germanium film tensile strain - Google Patents
A kind of preparation method for improving germanium film tensile strain Download PDFInfo
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- CN104681430B CN104681430B CN201510081779.9A CN201510081779A CN104681430B CN 104681430 B CN104681430 B CN 104681430B CN 201510081779 A CN201510081779 A CN 201510081779A CN 104681430 B CN104681430 B CN 104681430B
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- germanium
- germanium film
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Abstract
The invention discloses a kind of preparation method for improving germanium film tensile strain, comprise the following steps：Step one) prepare material；Step 2) annealing；Step 3) cooling treatment；Step 4) take out germanium film compound material.It is of the invention germanium material to be annealed and cooling treatment, a certain amount of tensile strain just can be obtained, the thickness of germanium film is not limited, it is simple with technique, easily realize, preparation cost is low, the features such as being adapted to produce in enormous quantities.The preparation method can be used in germanium trench MOSFET device and germanium opto-electronic device preparation technology flow, mutually compatible with silicon base CMOS technique.
Description
Technical field
The invention belongs to Material Field, it is related to a kind of preparation method for improving germanium film tensile strain.
Background technology
It is played an important role using the microelectric technique of silicon as mark in the development of information industry.However, with collection
Into the continuous improvement of circuit level, the size of electronic component will be less and less, and microelectric technique will be faced with heat dissipation problem
The problems such as seriously, power consumption is big, technology difficulty is big.Therefore we need to find a kind of of new generation silicon mutually compatible with silicon technology
Sill and technology further develop integrated circuit.
Germanium material has the carrier mobility higher than silicon materials, is the reason for preparing high-speed microelectronic and opto-electronic device
Think one of material；The manufacture craft of germanium device is not only completely compatible with silicon CMOS technology, and low manufacture cost, therefore, germanium material
The exploitation of material has obtained the extensive concern of domestic and international expert.
Compared to traditional germanium material, tensile strain germanium material has more advantages, and application prospect is more wide.Such as：
In terms of Ge MOSFET elements are prepared, tensile strain suitably is introduced in Ge materials, moving for its carrier can be further improved
Shifting rate, so as to improve the performance of device；In terms of opto-electronic device, the direct band gap that tensile strain Ge materials can improve Ge lights
Efficiency, so that the gain media for preparing laser.Therefore, the preparation of tensile strain Ge materials greatly can promote silicon substrate micro-
Electronic technology and photoelectron technology advance.
At present, the method for improving germanium material tensile strain mainly has following several：A kind of method is extension life on a si substrate
Long Ge materials, epitaxial growth temperature is 500 DEG C~800 DEG C, when temperature is reduced to room temperature, can be introduced in germanium and is about
0.25% tensile strain, this method is the tensile strain being naturally introduced by epitaxial growth Ge materials process, and its tensile strain value compares
It is small.Another method is that this class method can not be with by applying mechanical stress on Ge thin-film materials to improve its tensile strain
Silicon CMOS technology is compatible, is unfavorable for the production in enormous quantities of chip.Further, it is also possible to utilize content gradually variational on gaas substrates
InxGa1-xAs buffer layer technique epitaxial growth Ge materials, obtain the Ge materials of tensile strain, but be due to by Ge critical thicknesses
Limitation, the Ge that this method is obtained is than relatively thin, about 10nm or so, and this method and existing silicon CMOS technology are not compatible,
It is unfavorable for producing in enormous quantities.Thus it will be seen that the existing method for improving germanium film tensile strain all has process conditions
It is required that height, complex technical process, the shortcomings of be difficult to mutually compatible with traditional silicon CMOS technology.
The content of the invention
To overcome above mentioned problem, the invention provides a kind of preparation method for improving germanium film tensile strain, energy and traditional silicon
Mutually compatible and technique preparation process is simple for CMOS technology, the method that can effectively improve germanium film tensile strain.
To achieve the above object the technical scheme is that：
A kind of preparation method for improving germanium film tensile strain, comprises the following steps:
Step one) prepare material:Prepare a kind of germanium film compound material, the germanium film compound material include germanium film and
Non- germanium base material, the germanium film is grown on non-germanium base material, and the thermal coefficient of expansion of germanium film and non-germanium substrate
The thermal coefficient of expansion of material is different；
Step 2) annealing：Germanium film compound material is put into annealing furnace to anneal in atmosphere of inert gases, the annealing temperature
>=300 DEG C of degree and the fusing point for being less than germanium and non-germanium base material, annealing time are >=10 minutes；
Step 3) cooling treatment：Germanium film compound material after annealing is placed at a temperature of 77K~300K and cooled down, cooling
Time >=10 minute；
Step 4) take out germanium film compound material.
It is further to improve, the step one) in, germanium film compound material is silicon base Epitaxial growth germanium film or exhausted
Germanium film in edge layer.
It is further to improve, the step 3) in, the germanium film compound material after annealing is placed in the insulation equipped with liquid nitrogen
In cup, the thermos cup is the cooling device with temperature control system.
The present invention is annealed and cooling treatment to germanium material, just a certain amount of tensile strain can be obtained, to the thickness of germanium film
Degree is not limited, simple with technique, is easily realized, preparation cost is low, the features such as being adapted to produce in enormous quantities.The preparation method
It can be used in germanium trench MOSFET device and germanium opto-electronic device preparation technology flow, it is mutually compatible with silicon base CMOS technique.
Brief description of the drawings
Below in conjunction with the accompanying drawings and embodiment the invention will be further described：
A kind of preparation method schematic flow sheets for improving germanium film tensile strain of Fig. 1；
Germanium film is produced in Fig. 2 embodiments 1 tensile strain and the relation schematic diagram of annealing temperature.
Embodiment：
Embodiment 1
Such as a kind of preparation method flow charts of raising germanium film tensile strain of Fig. 1.Prepare silicon base Epitaxial growth germanium first
Thin-film material：Thickness is thin for the germanium that the Si substrates of 800 μm of No clean are put into one layer 0.5 μm of chemical vapor deposition system growth
Film；Silicon base Epitaxial growth germanium film material is then taken out, is placed it into the annealing furnace filled with nitrogen, annealing furnace temperature is set
800 DEG C are set to, annealing time is set to 20 minutes；Annealing is rapid after terminating to take out silicon base Epitaxial growth germanium film material
It is put into the thermos cup equipped with liquid nitrogen and cools down 20 minutes；Then take out silicon base Epitaxial growth germanium film material.Due to germanium material
Material is different from the thermal coefficient of expansion of Si materials, is cooled in the silicon base for obtaining 0.4% tensile strain by high annealing after 77K
Epitaxial growth Ge thin-film material, 1.6 times are improved than 0.25% tensile strain that directly epitaxial growth Ge is obtained on a silicon substrate.
When silicon base Epitaxial growth germanium film material is put into anneal, the germanium material in high temperature is in complete
The state of relaxation, annealing is rapid after terminating to be put into cooling under liquid nitrogen environment by material, from High-temperature cooling to liquid nitrogen (temperature is 77K)
During, because the thermal coefficient of expansion of the germanium of place at the same temperature is big than silicon, therefore during cooling, the parallel lattice of germanium is received
The degree of contracting will be bigger than silicon, but be due to the inhibition of base silicon, and the parallel lattice of germanium, which shrinks, to be limited, show by
The state of stretching, so that the parallel lattice of germanium is bigger than the parallel lattice of body germanium after cooling, i.e., generates in germanium film and opens
Strain.
Because thermal vibration of the thermal coefficient of expansion mainly with material of material is closely related, with the reduction of temperature, material heat
Vibration weakening, so as to cause thermal coefficient of expansion to reduce, that is to say, that the thermal coefficient of expansion of material is close phase with the temperature of environment
Close.The relation of the thermal coefficient of expansion and temperature of germanium and silicon materials can be described with formula (1), (2)：
αGe(T)=6.050x10-6+3.600x10-9T-0.350x10-12T2(K-1) (1)
αSi(T)=[3.725x (1-e[-5.88x10-3(T+149.15)])+5.548x10-4T]x10-6(K-1) (2)
The tensile strain that germanium film under for being cooled to low-temperature condition from the condition of high temperature is produced can use formula (3), (4) table
Show：
Wherein YGe=102.1GPa, YSi=130.4GPa, respectively germanium and silicon Young's modulus size, hGe、hSiRespectively
The germanium material of epitaxial growth and the thickness of silicon substrate material.Tensile strain and relation such as Fig. 2 institutes of annealing temperature that germanium film is produced
Show.
In the present embodiment, the thickness of silicon base and germanium material is respectively 800 μm and 0.5 μm, annealing temperature be 1073K (i.e.
800 DEG C) when, then the germanium film of about 0.4% tensile strain can be obtained by being cooled under liquid nitrogen environment (77K), than directly in silicon substrate
0.25% tensile strain that bottom Epitaxial growth germanium is obtained improves 1.6 times.Tensile strain germanium film is prepared with this method not only to hold
Easy and ripe silicon base CMOS technique is integrated, and simple with technique, and preparation cost is low, reduces production difficulty, is adapted to big
The advantages of batch production.
Embodiment 2
A kind of preparation method for improving germanium film tensile strain：Prepare germanium film material on insulating barrier：Germanium on the insulating barrier
There is one layer 1.2 μm of SiO in the Si substrates of thin-film material2Material, SiO2There is one layer 0.1 μm of germanium film on material.Place it into
In annealing furnace filled with nitrogen, annealing furnace temperature setting is 850 DEG C, and annealing time is set to 20 minutes；Annealing is rapid after terminating
Germanium film material on insulating barrier is taken out to be put into the thermos cup equipped with liquid nitrogen and cooled down 20 minutes；Then take out germanium on insulating barrier thin
Membrane material.Because germanium material is different from the thermal coefficient of expansion of Si materials, 0.5% will be obtained by being cooled to by high annealing after 77K
The silicon base Epitaxial growth germanium film material of tensile strain, than 0.25% that directly epitaxial growth Ge is obtained on a silicon substrate
Strain improves 2 times.
Embodiment 3
A kind of preparation method for improving germanium film tensile strain：Prepare germanium film material on insulating barrier：Germanium on the insulating barrier
The SiO for having one layer 500 μm of thin-film material2Material, SiO2There is one layer 0.2 μm of germanium film on material.Place it into filled with nitrogen
Annealing furnace in, annealing furnace temperature setting be 600 DEG C, annealing time is set to 10 minutes；Annealing is rapid by insulating barrier after terminating
Upper germanium film material takes out to be put into the thermos cup equipped with liquid nitrogen and cooled down 10 minutes；Then take out germanium film material on insulating barrier.
Because germanium material is different from the thermal coefficient of expansion of Si materials, 0.35% tensile strain will be obtained by being cooled to by high annealing after 300K
Silicon base Epitaxial growth germanium film material, carried than 0.25% tensile strain that directly epitaxial growth Ge is obtained on a silicon substrate
It is high 1.4 times.
Embodiment 4
A kind of preparation method for improving germanium film tensile strain：Prepare germanium film material on insulating barrier：Germanium on the insulating barrier
There is one layer 800 μm of SiO in the Si substrates of thin-film material2Material, SiO2There is one layer 0.2 μm of germanium film on material.Place it into
In annealing furnace filled with nitrogen, annealing furnace temperature setting is 900 DEG C, and annealing time is set to 30 minutes；Annealing is rapid after terminating
Germanium film material on insulating barrier is taken out to be put into the thermos cup equipped with liquid nitrogen and cooled down 30 minutes；Then take out germanium on insulating barrier thin
Membrane material.Because germanium material is different from the thermal coefficient of expansion of Si materials, being cooled to by high annealing after 200K to obtain
The silicon base Epitaxial growth germanium film material of 0.61% tensile strain, than directly epitaxial growth Ge is obtained on a silicon substrate
0.25% tensile strain improves 2.4 times.
Embodiment described above is only that the preferred embodiment of the present invention is described, and not the scope of the present invention is entered
Row is limited, on the premise of design spirit of the present invention is not departed from, and those of ordinary skill in the art make to technical scheme
In the various modifications gone out and improvement, the protection domain that claims of the present invention determination all should be fallen into.
Claims (2)
1. a kind of preparation method for improving germanium film tensile strain, it is characterised in that, comprise the following steps:
Step one) prepare material:Non- germanium base material is put into chemical vapor deposition system and grows one layer of germanium film, and germanium is thin
The thermal coefficient of expansion of film is different from the thermal coefficient of expansion of non-germanium base material；
Step 2) annealing：Germanium film compound material is put into annealing furnace to anneal in atmosphere of inert gases, annealing temperature >=300
DEG C and less than the fusing point of germanium and non-germanium base material, annealing time >=10 minute；
Step 3) cooling treatment：Germanium film compound material after annealing is placed in the thermos cup equipped with liquid nitrogen, the thermos cup
It is the cooling device with temperature control system；Cooled down at a temperature of 77K, cool time >=10 minute；
Step 4) take out germanium film compound material.
2. the preparation method of germanium film tensile strain is improved as claimed in claim 1, it is characterised in that the step one) in, germanium
Film compound material is germanium film on silicon base Epitaxial growth germanium film or insulating barrier.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203055915U (en) * | 2012-12-11 | 2013-07-10 | 深圳信息职业技术学院 | Tensile-strain germanium film |
| CN103794694A (en) * | 2014-01-21 | 2014-05-14 | 浙江大学 | Silicon-based germanium film with tensile strain and manufacturing method thereof |
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| CA2489567A1 (en) * | 2002-06-19 | 2003-12-31 | Massachusetts Institute Of Technology | Ge photodetectors |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203055915U (en) * | 2012-12-11 | 2013-07-10 | 深圳信息职业技术学院 | Tensile-strain germanium film |
| CN103794694A (en) * | 2014-01-21 | 2014-05-14 | 浙江大学 | Silicon-based germanium film with tensile strain and manufacturing method thereof |
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