CN104671746A - Ceramic wafer of thermistor, thermistor and preparation method thereof - Google Patents

Ceramic wafer of thermistor, thermistor and preparation method thereof Download PDF

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Publication number
CN104671746A
CN104671746A CN201510073475.8A CN201510073475A CN104671746A CN 104671746 A CN104671746 A CN 104671746A CN 201510073475 A CN201510073475 A CN 201510073475A CN 104671746 A CN104671746 A CN 104671746A
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thermistor
ceramic plate
transition metal
rare earth
metal oxide
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CN104671746B (en
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包汉青
黄飞
李登峰
袁仲宁
李瑞清
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Shenzhen Sunlord Electronics Co Ltd
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Shenzhen Sunlord Electronics Co Ltd
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Abstract

The invention discloses a ceramic wafer of a thermistor, the thermistor and a preparation method thereof. The ceramic wafer of the thermistor is prepared by sintering after molding mixture powder at the molding pressure of 50-500MPa by using a cold isostatic pressing molding process, wherein the mixture powder comprises transition metal oxide powder and rare earth oxide; the transition metal oxide powder comprises the following components in percentage by mole: 30-70% of Co3O4, 20-60% of MnO2 and 5-20% of CuO; the rare earth oxide is Y2O3 or La2O3; and the mass of the rare earth oxide is 1-10% of the mass of the transition metal oxide powder. The thermistor is prepared from the ceramic wafer of the thermistor, a pair of electrodes, a pair of leading wires and an insulated material. All the B value, rated electrifying current and impact-resistant capacitance of the prepared thermistor are relatively high.

Description

A kind of thermistor ceramic plate, thermistor and preparation method thereof
[technical field]
The present invention relates to thermistor element, particularly relate to a kind of thermistor ceramic plate, thermistor and preparation method thereof.
[background technology]
Electronic and electrical equipment; electronics particularly with high-power AC-DC power supply; in its performance loop, be usually connected in series one or more power-type NTC themistor element, surge current when starting shooting for suppressing electronics, thus protection electronics exempts from destruction.NTC themistor element generally adds top electrode by thermistor ceramic plate, makes after coating insulating material.Thermistor ceramic plate is generally sintered by transition metal oxide powder and forms.The component of existing transition metal oxide powder and content have comparatively many body system, more formula.Various system and the ceramic plate obtained under filling a prescription, the performances such as the B value of obtained thermistor, specified electrical current, shock-resistant electric capacity are different.High performance power-type NTC thermistor is then the target that people pursue.The features such as high performance power type NTC thermistor has that material constant (B value) is large, residual resistance is little, bear that electric current is large, work capacity strong, dependable performance, life-span are long.
[summary of the invention]
Technical problem to be solved by this invention is: make up above-mentioned the deficiencies in the prior art, proposes a kind of thermistor ceramic plate, thermistor and preparation method thereof, and the B value of obtained thermistor, specified electrical current, shock-resistant electric capacity are all higher.
Technical problem of the present invention is solved by following technical scheme:
A kind of thermistor ceramic plate, sinters after adopting cold isostatic compaction technological forming form by mix powder under the forming pressure of 50 ~ 500MPa; Described mix powder comprises transition metal oxide powder and rare earth oxide, and described transition metal oxide powder comprises the component of following content: by mole% calculating, the tricobalt tetroxide Co of 30% ~ 70% 3o 4, the Manganse Dioxide MnO of 20% ~ 60% 2, the cupric oxide CuO of 5% ~ 20%; Described rare earth oxide is yttrium oxide Y 2o 3or lanthanum trioxide La 2o 3, the quality of described rare earth oxide is 1% ~ 10% of described transition metal oxide powder quality.
A preparation method for thermistor ceramic plate, comprises the following steps: 1) by tricobalt tetroxide Co 3o 4, Manganse Dioxide MnO 2be (30% ~ 70%) with cupric oxide CuO according to molar percentage: (20% ~ 60%): (5% ~ 20%) mixes, calcining after mixing, obtained transition metal oxide powder; 2) in described transition metal oxide powder, add rare earth oxide and obtain mix powder, described rare earth oxide is yttrium oxide Y 2o 3or lanthanum trioxide La 2o 3, the quality of described rare earth oxide is 1% ~ 10% of described transition metal oxide powder quality; 3) by the forming pressure of mix powder at 50 ~ 500MPa, cold isostatic compaction technological forming is adopted to become the green sheet of setting size; 4) after green sheet being sintered, obtained described thermistor ceramic plate.
A kind of thermistor, comprise thermistor ceramic plate, pair of electrodes, pair of lead wires and insulating material, described pair of electrodes is separately positioned on the two sides of described thermistor ceramic plate, described pair of lead wires is welded in described pair of electrodes respectively, and described insulating material is coated on described thermistor ceramic plate and electrode is peripheral; Described thermistor ceramic plate is thermistor ceramic plate as above.
A preparation method for thermistor, comprises the following steps: prepare thermistor ceramic plate as above; Print electrode in the two sides of described thermistor ceramic plate slurry, sintering, and the two sides of described thermistor ceramic plate form pair of electrodes; Pair of lead wires is welded on respectively in described pair of electrodes; At described thermistor ceramic plate and electrode periphery coating one deck insulating material, obtained described thermistor.
The beneficial effect that the present invention is compared with the prior art is:
Thermistor ceramic plate of the present invention, appropriate rare earth oxide is added on the basis of transition metal oxide powder, obtain the new blend powder under certain formula system, adopt cold isostatic compaction, make the distribution uniform of mix powder in the shaping green sheet obtained, there will not be material to reunite, there is the crystalline-granular texture of too growing up, thus guarantee that the B value of the thermistor obtained, specified electrical current, shock-resistant electric capacity are all higher from formula and formula distribution two aspect.Experimentally test result, the thermistor that aforesaid way is obtained, than the thermistor of existing comparable size, B value exceeds 500 ~ 600, and specified electrical current exceeds 1 ~ 7A, and shock-resistant electric capacity exceeds 70 ~ 2500 μ F.
[accompanying drawing explanation]
Fig. 1 is the structural representation of the thermistor in the specific embodiment of the invention.
[embodiment]
Contrast accompanying drawing below in conjunction with embodiment the present invention is described in further details.
Embodiment
In this embodiment, first prepare thermistor ceramic plate, during preparation:
1) by mole% calculating, by the tricobalt tetroxide Co of 30% ~ 70% 3o 4, the Manganse Dioxide MnO of 20% ~ 60% 2, the cupric oxide CuO of 5% ~ 20% mixes, calcining after mixing, obtained transition metal oxide powder.Preferably, tricobalt tetroxide Co 3o 4molar percentage be 40-60%, Manganse Dioxide MnO 2molar percentage be 30-50%.When the content of tricobalt tetroxide and Manganse Dioxide is in above-mentioned scope, during the thermistor that follow-up obtained ceramic plate can be made to make, resistivity is relatively low, and B value is relatively high.
2) in transition metal oxide powder, add rare earth oxide and obtain mix powder.Wherein, rare earth oxide is yttrium oxide Y 2o 3or lanthanum trioxide La 2o 3, the quality of rare earth oxide is 1% ~ 10% of transition metal oxide powder quality.Preferably, the quality of rare earth oxide is 2% ~ 5% of transition metal oxide powder quality.When the addition of rare earth oxide is within the scope of this, little on the impact of the electrical property of obtained ceramic plate, but the power of resisting voltaic impingement of ceramic plate can be made better.
3) by mix powder, under the forming pressure of 50 ~ 500MPa, cold isostatic compaction technological forming is adopted to become the green sheet of setting size.Preferably, the forming pressure of cold isostatic compaction technique is: 200 ~ 300MPa.
4) green sheet is sintered into thermistor ceramic plate.
After obtained thermistor ceramic plate, obtained thermistor after adding electrode, lead-in wire, insulating material.Detailed process is as follows:
5) print electrode slurry, sintering on the two sides of thermistor ceramic plate, and the two sides of described thermistor ceramic plate form pair of electrodes.Preferably, electrode adopts silver palladium alloy, and wherein the massfraction of palladium is 1% ~ 10%, is preferably 3% ~ 6%, thus the weldability of silver-colored palladium slurry electrode materials is better.
6) pair of lead wires is welded in pair of electrodes respectively.The material of lead-in wire is the silver-plated or fine silver of fine copper, copper, is preferably the silver-plated material of copper.During welding, preferably adopt argentiferous scolding tin thus improve the electroconductibility between electrode and lead-in wire.Wherein the content of silver accounts for 0.1% ~ 5% in argentiferous soldering tin material.Preferably, the content of silver accounts for 3% ~ 4%.When the silver content in argentiferous soldering tin material is within the scope of this, and during electrode employing silver palladium alloy, ag material when can effectively control to weld in electrode moves in soldering tin material and goes, and avoids the use of argentiferous soldering tin material to have impact on the electroconductibility of electrode materials.
7) at thermistor ceramic plate and electrode periphery coating one deck insulating material, obtained described thermistor.
As shown in Figure 1, in figure, 1 represents thermistor ceramic plate to the structure iron of obtained thermistor, and 2 represent electrode, and 3 represent lead-in wire, and 4 represent soldering tin material, and 5 represent insulation material layer.
In this embodiment, prepare metal oxide powder according to certain formula, and add appropriate rare earth oxide on this basis, obtain mix powder.This mix powder is adopted cold isostatic compaction technological forming, make shaping after green sheet in the distribution of material of mix powder even, without the crystalline-granular texture that material is reunited or too grown up, thus make the B value of the thermistor obtained, specified electrical current, shock-resistant electric capacity all higher from distribution two aspect of formula and formula materials.The improvement of simple formula can improve the B value of obtained thermistor, but from filling a prescription and distribution two aspect of formula materials in this embodiment, to guarantee 3 performances: B value, specified electrical current, shock-resistant electric capacity are all higher.
As follows, by arranging multiple embodiment, verify the performance perameter of thermistor obtained in this embodiment.
Embodiment 1:
(1) by Co 3o 4, MnO 2, CuO powder proportionally (molar percentage) 50%:45%:5% mix, at 800 DEG C, calcine 6h.
(2) in the transition metal oxide powder mixed, add the Y of its 5% mass ratio 2o 3, mix, obtain mix powder.
(3) by the mix powder that step (2) is obtained, under 300Mpa pressure, utilize cold isostatic compaction to be 22mm for diameter, thickness is the raw embryo sheet of 2mm.
(4) life embryo sheet is burnt till thermistor ceramic plate at 1100 DEG C.
(5) in two relative faces of thermistor ceramic plate, contained the electrode slurry of the silver palladium alloy of 5% (massfraction) palladium by silk screen printing, then at 800 DEG C, sinter 10 minutes, form silver-colored palladium electrode.
(6) with silver content be the soldering tin material of 3.5% mass ratio, the silver-plated lead being 1 millimeter by two diameters is welded on two relative electrodes respectively.
(7) coated one deck silicone insulation material on thermistor, obtained negative tempperature coefficient thermistor.
Test and comparing result: the thermistor prepared by above method, the resistance value at 25 DEG C is 5 ohm, and thermo-sensitive material constant B value is 3500, and specified electrical current is 15A, can tolerate the impact electric capacity of 4700 μ F.And the product of same size on the market and resistance, B value is 3000, and specified electrical current is 8A, can tolerate the impact electric capacity of 2200 μ F.By contrast, the performance of the thermistor that the present embodiment provides obviously is better than currently available products.
Embodiment 2: the present embodiment is from the difference of embodiment 1: component concentration is different: by Co 3o 4, MnO 2, CuO powder proportionally (molar percentage) 50%:40%:10% carry out being mixed to form transition metal oxide powder.The mass ratio that rare earth oxide adds is different.Size shaping in preparation process is different.
In the present embodiment, concrete preparation process is as follows:
(1) by Co 3o 4, MnO 2, CuO powder proportionally (molar percentage) 50%:40%:10% mix, at 800 DEG C, calcine 6h.
(2) in the transition metal oxide powder mixed, add the Y of its 3% mass ratio 2o 3, mix.
(3) by the mix powder that step (2) is obtained, under 200Mpa pressure, utilize cold isostatic compaction to be 9.5mm for diameter, thickness is the raw embryo sheet of 1.2mm.
(4) life embryo sheet is burnt till thermistor ceramic plate at 1100 DEG C.
(5) in two relative faces of thermistor ceramic plate, contained the electrode slurry of the silver palladium alloy of 5% (massfraction) palladium by silk screen printing, then at 800 DEG C, sinter 10 minutes, form silver-colored palladium electrode.
(6) with silver content be the soldering tin material of 3.5% mass ratio, the silver-plated lead being 0.6 millimeter by two diameters is welded on two relative electrodes respectively.
(7) coated one deck silicone insulation material on thermistor, obtained negative tempperature coefficient thermistor.
Test and comparing result: the thermistor prepared by above method, the resistance value at 25 DEG C is 5 ohm, and thermo-sensitive material constant B value is 3300, and specified electrical current is 4.5A, can tolerate the impact electric capacity of 220 μ F.And the product of same size on the market and resistance, B value is 2800, and specified electrical current is 3A, can tolerate the impact electric capacity of 150 μ F.By contrast, the performance of the thermistor that the present embodiment provides is better than currently available products.
Embodiment 3: the present embodiment is from the difference of embodiment 1: component concentration is different: by Co 3o 4, MnO 2, CuO powder proportionally (molar percentage) 50%:43%:7% carry out being mixed to form transition metal oxide powder.And shaping size is different in preparation process, in the present embodiment, in step (3), cold isostatic compaction is of a size of diameter is 14mm, and thickness is the raw embryo sheet of 1.3mm.All the other steps are all in the same manner as in Example 1, in this not repeat specification.
Test and comparing result: obtained thermistor, the resistance value at 25 DEG C is 5 ohm, and thermo-sensitive material constant B value is 3400, and specified electrical current is 5A, can tolerate the impact electric capacity of 1200 μ F.And the product of same size on the market and resistance, B value is 2800, and specified electrical current is 4A, can tolerate the impact electric capacity of 800 μ F.By contrast, the performance of the thermistor that the present embodiment provides obviously is better than currently available products.
Embodiment 4: the difference of the present embodiment and embodiment 1 is: kind and the massfraction of the rare earth oxide of interpolation are different, in the present embodiment in step (2), in the transition metal oxide powder mixed, add the lanthanum trioxide La of its 3% mass ratio 2o 3.All the other steps are all in the same manner as in Example 1, in this not repeat specification.
Test and comparing result: obtained thermistor, the resistance value at 25 DEG C is 5 ohm, and thermo-sensitive material constant B value is 3500, and specified electrical current is 15A, can tolerate the impact electric capacity of 3300uF.And the product of same size on the market and resistance, B value is 3000, and specified electrical current is 8A, can tolerate the impact electric capacity of 2200uF.By contrast, the thermistor of thermistor slightly inferior properties in embodiment 1 that the present embodiment provides, but be better than currently available products equally.
Above content is in conjunction with concrete preferred implementation further description made for the present invention, can not assert that specific embodiment of the invention is confined to these explanations.For general technical staff of the technical field of the invention, make some substituting or obvious modification without departing from the inventive concept of the premise, and performance or purposes identical, all should be considered as belonging to protection scope of the present invention.

Claims (10)

1. a thermistor ceramic plate, is characterized in that: sinter after adopting cold isostatic compaction technological forming by mix powder under the forming pressure of 50 ~ 500MPa and form; Described mix powder comprises transition metal oxide powder and rare earth oxide, and described transition metal oxide powder comprises the component of following content: by mole% calculating, the tricobalt tetroxide Co of 30% ~ 70% 3o 4, the Manganse Dioxide MnO of 20% ~ 60% 2, the cupric oxide CuO of 5% ~ 20%; Described rare earth oxide is yttrium oxide Y 2o 3or lanthanum trioxide La 2o 3, the quality of described rare earth oxide is 1% ~ 10% of described transition metal oxide powder quality.
2. thermistor ceramic plate according to claim 1, is characterized in that: the quality of described rare earth oxide is 2% ~ 5% of described transition metal oxide powder quality.
3. thermistor ceramic plate according to claim 1, is characterized in that: described tricobalt tetroxide Co 3o 4molar percentage be 40-60%, Manganse Dioxide MnO 2molar percentage be 30-50%.
4. a preparation method for thermistor ceramic plate, is characterized in that: comprise the following steps: 1) by tricobalt tetroxide Co 3o 4, Manganse Dioxide MnO 2be (30% ~ 70%) with cupric oxide CuO according to molar percentage: (20% ~ 60%): (5% ~ 20%) mixes, calcining after mixing, obtained transition metal oxide powder; 2) in described transition metal oxide powder, add rare earth oxide and obtain mix powder, described rare earth oxide is yttrium oxide Y 2o 3or lanthanum trioxide La 2o 3, the quality of described rare earth oxide is 1% ~ 10% of described transition metal oxide powder quality; 3) by the forming pressure of mix powder at 50 ~ 500MPa, cold isostatic compaction technological forming is adopted to become the green sheet of setting size; 4) after green sheet being sintered, obtained described thermistor ceramic plate.
5. the preparation method of thermistor ceramic plate according to claim 4, is characterized in that: described step 2) in, the quality of described rare earth oxide is 2% ~ 5% of described transition metal oxide powder quality.
6. the preparation method of thermistor ceramic plate according to claim 4, is characterized in that: described step 3) in, by the forming pressure of mix powder at 200 ~ 300MPa, adopt cold isostatic compaction technological forming.
7. a thermistor, comprise thermistor ceramic plate, pair of electrodes, pair of lead wires and insulating material, described pair of electrodes is separately positioned on the two sides of described thermistor ceramic plate, described pair of lead wires is welded in described pair of electrodes respectively, and described insulating material is coated on described thermistor ceramic plate and electrode is peripheral; It is characterized in that: described thermistor ceramic plate is the thermistor ceramic plate described in any one of claim 1-3.
8. thermistor according to claim 7, is characterized in that: the material of described electrode is silver palladium alloy, and wherein the massfraction of palladium is 1% ~ 10%.
9. thermistor according to claim 7, is characterized in that: the material of described lead-in wire is the silver-plated or fine silver of fine copper, copper.
10. a preparation method for thermistor, is characterized in that: comprise the following steps: prepare the thermistor ceramic plate as described in any one of claim 1-3; Print electrode in the two sides of described thermistor ceramic plate slurry, sintering, and the two sides of described thermistor ceramic plate form pair of electrodes; Pair of lead wires is welded on respectively in described pair of electrodes; At described thermistor ceramic plate and electrode periphery coating one deck insulating material, obtained described thermistor.
CN201510073475.8A 2015-02-11 2015-02-11 A kind of thermistor potsherd, thermistor and preparation method thereof Active CN104671746B (en)

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CN109411171A (en) * 2018-10-24 2019-03-01 北京控制工程研究所 A kind of preparation method of negative temperature coefficient bead thermistor
CN109727740A (en) * 2018-12-29 2019-05-07 肇庆鼎晟电子科技有限公司 A kind of high-precision high-reliability lamination thermistor chip and preparation method thereof

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CN102568722A (en) * 2012-01-05 2012-07-11 深圳顺络电子股份有限公司 SMD (surface mounted device) thermistor and manufacturing method thereof
CN104150880A (en) * 2014-06-27 2014-11-19 句容市博远电子有限公司 Manganese-cobalt-copper thermistor material

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CN102568722A (en) * 2012-01-05 2012-07-11 深圳顺络电子股份有限公司 SMD (surface mounted device) thermistor and manufacturing method thereof
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Publication number Priority date Publication date Assignee Title
CN109411171A (en) * 2018-10-24 2019-03-01 北京控制工程研究所 A kind of preparation method of negative temperature coefficient bead thermistor
CN109411171B (en) * 2018-10-24 2020-09-18 北京控制工程研究所 Preparation method of negative temperature coefficient bead thermistor
CN109727740A (en) * 2018-12-29 2019-05-07 肇庆鼎晟电子科技有限公司 A kind of high-precision high-reliability lamination thermistor chip and preparation method thereof
CN109727740B (en) * 2018-12-29 2021-11-23 肇庆鼎晟电子科技有限公司 High-precision high-reliability laminated thermistor chip and manufacturing method thereof

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