CN104671191B - micro-nano structure and preparation method thereof - Google Patents
micro-nano structure and preparation method thereof Download PDFInfo
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- CN104671191B CN104671191B CN201310624732.3A CN201310624732A CN104671191B CN 104671191 B CN104671191 B CN 104671191B CN 201310624732 A CN201310624732 A CN 201310624732A CN 104671191 B CN104671191 B CN 104671191B
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Abstract
The present invention provides a kind of preparation method of micro-nano structure, including step：Stacked N layer negtive photoresist Rotating fields are sequentially formed in the upper surface of substrate, N negtive photoresist Rotating fields are formed at the upper surface of the negtive photoresist Rotating fields of N 1；The position that pin is reinforced to being preset in N layers of negtive photoresist Rotating fields is disposably exposed, and is formed in N layers of negtive photoresist Rotating fields and is reinforced pin；Development treatment is carried out to all layers of negtive photoresist Rotating fields；Wherein, N is the integer more than or equal to 2.Micro-nano structure steadiness and good reliability that the preparation method of the micro-nano structure is obtained.The present invention also provides a kind of micro-nano structure.
Description
Technical field
The invention belongs to nanometer technique field, it is related to a kind of minute mechanical and electrical system and preparation method thereof.
Background technology
Minute mechanical and electrical system（Micro/Nano Electro Mechanical Systems, abbreviation MEMS/NEMS）Including
By the micron order of the micro-nano technology such as sputtering, photoetching, microplating technique formation, even nano level micro-nano system architecture, it has
Have many advantages, such as that miniaturization, intellectuality, integrated, compatible high and cost are low, be widely used in electronic chip, sensing
In the fields such as device, bioelectronics and intelligent equipment.
In micro-nano system manufacture view, as people can retain to negtive photoresist technique, particularly as part system structure
The further investigation of negtive photoresist technique in micro-nano system so that multiple layer combination negtive photoresist structure progressively turns into micro-nano system to be weighed very much
A kind of structure wanted.
But this multiple layer combination negtive photoresist structure has the problem of bond strength is poor, when making micro-nano system, due to many
The thickness of every layer of negtive photoresist is differed in layer combination negtive photoresist structure, or, even if the thickness of every layer of negtive photoresist is identical, negtive photoresist layer and negtive photoresist
Also gap is inevitably present between layer, and there is bigger difference in the drying time of every layer of negtive photoresist layer, and these can all cause
Bond strength between negtive photoresist layer and negtive photoresist layer declines, so that the steadiness and reliability decrease of whole micro-nano system.
Multiple layer combination negtive photoresist structure uses multiexposure, multiple exposure, and the method once developed is formed, and can make sufficiently complex knot
Structure, at the same have the advantages that high-aspect-ratio, device architecture easily discharge, processing compatibility it is high, it has been widely applied to Microfluidizer
In the fields such as part, micro sensing device, passive device.
The content of the invention
There is provided one kind is micro- aiming at drawbacks described above present in minute mechanical and electrical system for the technical problem to be solved in the present invention
Micro-nano structure and preparation method thereof, negtive photoresist layer and negtive photoresist layer between bond strength it is higher, can make micro-nano structure steadiness and can
Improved by property.
Therefore, the present invention provides a kind of preparation method of micro-nano structure, comprise the following steps：
Substrate is provided；
The first negtive photoresist layer is formed in the upper surface of the substrate；
First negtive photoresist layer is exposed, to form the first negtive photoresist Rotating fields on the surface of the substrate, and described the
The position that reinforcing pin is preset in one negtive photoresist Rotating fields forms unexposed reinforcing pin pattern；
The second negtive photoresist layer is formed in the upper surface of the first negtive photoresist Rotating fields；
The second negtive photoresist layer is exposed, to form the second negtive photoresist Rotating fields in the upper surface of the first negtive photoresist Rotating fields,
And the position for presetting reinforcing pin in the second negtive photoresist Rotating fields is formed unexposed reinforcing pin pattern；
Obtain stacked N layer negtive photoresist Rotating fields successively in the upper surface of substrate in this way, N negtive photoresist Rotating fields are formed at
The upper surface of N-1 negtive photoresist Rotating fields；
The position that pin is reinforced to being preset in the N layers of negtive photoresist Rotating fields is disposably exposed, in N layers of negtive photoresist layer
Formed in structure and reinforce pin；
Negtive photoresist Rotating fields described to all layers carry out development treatment, to form required micro-nano structure；
Wherein, N is the integer more than or equal to 2.
Wherein, unexposed reinforcing pin pattern dimension is more than and obtained equal to N-1 negtive photoresist Rotating fields in N negtive photoresists Rotating fields
In it is unexposed reinforcing pin pattern dimension
Wherein, the substrate is silicon substrate, glass substrate or ceramic substrate.
Wherein, the thickness of every layer of negtive photoresist Rotating fields is 50 nanometers -500 microns.
Wherein, the thickness of every layer of negtive photoresist Rotating fields is 1 micron -500 microns.
Wherein, the thickness of the N layers of negtive photoresist Rotating fields is identical.
Wherein, the thickness of the N layers of negtive photoresist Rotating fields is different.
Wherein, the reinforcing pin is loop configuration or column construction.
Wherein, the cross sectional shape of the loop configuration is polygonal annular, annular, oval ring；The column construction
Cross sectional shape is polygon, circular or ellipse.
The present invention also provides a kind of micro-nano structure, including substrate and the multilayer negtive photoresist layer knot for being stacked in the substrate top surface
Structure, provided with pin is reinforced between the multilayer negtive photoresist Rotating fields, to reinforce the adhesion between the negtive photoresist Rotating fields, institute
Micro-nano structure is stated to obtain by the preparation method of the micro-nano structure described in of the invention provide.
The invention has the advantages that：
The preparation method for the micro-nano structure that the present invention is provided is that stacked N layers negtive photoresist layer is once formed in the upper surface of substrate
Structure, and unexposed reinforcing pin pattern is formed in every layer of negtive photoresist Rotating fields, after all negtive photoresist Rotating fields complete
Pin is reinforced by exposing to obtain, development treatment is finally carried out, i.e., by multiexposure, multiple exposure, once developing to obtain has multiple layer combination
The micro-nano structure of negtive photoresist Rotating fields.The micro-nano structure can improve bond strength between layers by reinforcing pin, so that
Improve the steadiness and reliability of whole micro-nano structure.
The micro-nano structure that the present invention is provided is provided with the reinforcing through all negtive photoresist Rotating fields thickness between negtive photoresist Rotating fields
Pin, the bond strength between negtive photoresist Rotating fields can be improved by the reinforcing pin, so as to improve the steady of whole micro-nano structure
Solidity and reliability.
Brief description of the drawings
The flow chart of the preparation method for the micro-nano structure that Fig. 1 provides for the present embodiment；
Fig. 2 a are sectional view of the embodiment of the present invention after substrate surface sets the first negtive photoresist layer；
Fig. 2 b are sectional view of the embodiment of the present invention after substrate surface the first negtive photoresist Rotating fields of formation；
Fig. 2 c are that the embodiment of the present invention sets the sectional view after the second negtive photoresist layer on the first negtive photoresist Rotating fields surface；
Fig. 2 d are the sectional view after the embodiment of the present invention forms the second negtive photoresist Rotating fields on the first negtive photoresist Rotating fields surface；
Fig. 2 e are that the embodiment of the present invention sets the sectional view after the 3rd negtive photoresist layer on the second negtive photoresist Rotating fields surface；
Fig. 2 f are the sectional view after the embodiment of the present invention forms the 3rd negtive photoresist Rotating fields on the second negtive photoresist Rotating fields surface；
Fig. 2 g are that the embodiment of the present invention exposes the sectional view to be formed and reinforced after pin；
Fig. 2 h are the schematic cross-section of micro-nano structure of the embodiment of the present invention；
Fig. 3 is the schematic cross-section of the part-structure of micro-nano structure of the embodiment of the present invention.
Embodiment
To make those skilled in the art more fully understand technical scheme, the present invention is carried below in conjunction with the accompanying drawings
Micro-nano structure of confession and preparation method thereof, minute mechanical and electrical system are described in detail.
As shown in figure 1, the preparation method of micro-nano structure includes：
There is provided substrate by step S1.
Substrate can be silicon substrate, glass substrate or ceramic substrate.
Step S2, forms the first negtive photoresist layer in the upper surface of substrate.
The first negtive photoresist layer 100 is formed in the upper surface of substrate S using coating or other manner, as shown in Figure 2 a.First is negative
The thickness of glue-line 100 can arbitrarily be set according to actual conditions, the thickness of the present embodiment first negtive photoresist layer 100 select 50 nanometers-
500 microns, and for manufacture craft cost, preferably 1 micron -500 microns.
It should be noted that the present embodiment refers to that the upper surface of substrate S is a relative concept, in fig. 2 a positioned at upside
Face be upper surface.In fact, the upper surface of substrate S is considered the machined surface of substrate S.Similarly, hereinafter refer to
Upper surface is also a relative concept.
Step S3, exposes the first negtive photoresist layer, the first negtive photoresist Rotating fields is formed in the upper surface of substrate, and first
The position that reinforcing pin is preset in negtive photoresist Rotating fields forms unexposed reinforcing pin pattern.
The first negtive photoresist layer 100 is blocked using mask plate M1, then with the negtive photoresist of ultraviolet light first layer 100, in substrate S
Upper surface forms the first negtive photoresist Rotating fields 100 ', wherein, by the partially cured of ultraviolet light, not by the part of ultraviolet light
Include the default pattern for reinforcing pin, i.e., the position that reinforcing pin is preset in the first negtive photoresist Rotating fields 100 ' forms unexposed
Reinforcing pin pattern 101, as shown in Figure 2 b.
Step S4, forms the second negtive photoresist layer in the upper surface of the first negtive photoresist Rotating fields.
The second negtive photoresist layer 200 is obtained by coating or other manner in the upper surface of the first negtive photoresist Rotating fields 100 ', such as schemed
Shown in 2c.The thickness of second negtive photoresist layer 200 can arbitrarily be set according to actual conditions.The thickness of the negtive photoresist of the present embodiment second layer 200
50 nanometers -500 microns of degree selection, and for manufacture craft cost, preferably 1 micron -500 microns.
Step S5, exposure the second negtive photoresist layer, to form the second negtive photoresist Rotating fields in the upper surface of the first negtive photoresist Rotating fields, and
The position for presetting reinforcing pin in the second negtive photoresist Rotating fields is set to form unexposed reinforcing pin pattern.
The second negtive photoresist layer 200 is blocked using mask plate M2, it is negative first then with the negtive photoresist of ultraviolet light second layer 200
The upper surface of structural adhesive layer 100 ' forms the second negtive photoresist Rotating fields 200 ', wherein, it is not purple by the partially cured of ultraviolet light
The part of outer light irradiation includes the default pattern for reinforcing pin, i.e., preset in the second negtive photoresist Rotating fields 200 ' and reinforce pin
Position forms unexposed reinforcing pin pattern 201, moreover, the reinforcing pin pattern in the first negtive photoresist Rotating fields 100 '
101 is relative with the position for reinforcing pin pattern 201 in the second negtive photoresist Rotating fields 200 ', so that in the first negtive photoresist layer 100
Unexposed reinforcing pin pattern 101 is linked to be with unexposed reinforcing pin pattern 201 in the second negtive photoresist layer 200 in vertical direction
One, as shown in Figure 2 d.
Step S6, forms the 3rd negtive photoresist layer in the upper surface of the second negtive photoresist Rotating fields.
The 3rd negtive photoresist layer 300 is obtained by coating or other manner in the upper surface of the second negtive photoresist Rotating fields 200 ', such as schemed
Shown in 2e.The thickness of 3rd negtive photoresist layer 300 can arbitrarily be set according to actual conditions, the thickness of the negtive photoresist of the present embodiment the 3rd layer 300
50 nanometers -500 microns of degree selection, and for manufacture craft cost, preferably 1 micron -500 microns.
Step S7, exposure the 3rd negtive photoresist layer, to form the 3rd negtive photoresist Rotating fields in the upper surface of the second negtive photoresist Rotating fields, and
The position for presetting reinforcing pin in the 3rd negtive photoresist Rotating fields is set to form unexposed reinforcing pin pattern.
The 3rd negtive photoresist layer 300 is blocked using mask plate M3, it is negative second then with the negtive photoresist of ultraviolet light the 3rd layer 300
The upper surface of structural adhesive layer 200 ' forms the 3rd negtive photoresist Rotating fields 300 ', wherein, it is not purple by the partially cured of ultraviolet light
The part of outer light irradiation includes the default pattern for reinforcing pin, i.e., preset in the 3rd negtive photoresist Rotating fields 300 ' and reinforce pin
Position forms unexposed reinforcing pin pattern 301, moreover, the reinforcing pin pattern in the second negtive photoresist Rotating fields 200 '
201 is relative with the position for reinforcing pin pattern 301 in the 3rd negtive photoresist Rotating fields 300 ', so that in the second negtive photoresist layer 200
Unexposed reinforcing pin pattern 201 is linked to be with unexposed reinforcing pin pattern 301 in the 3rd negtive photoresist layer 300 in vertical direction
One, as shown in figure 2f.
Step S8, the position that pin is reinforced to being preset in three layers of negtive photoresist Rotating fields is disposably exposed, in three layers of negtive photoresist
Formed in Rotating fields and reinforce pin.
Three layers of stacked negtive photoresist Rotating fields, i.e. the first negtive photoresist Rotating fields are obtained in the upper surface of substrate S by step S2-S7
100 ', second negtive photoresist Rotating fields 200 ' and the 3rd negtive photoresist Rotating fields 300 '.The 3rd negtive photoresist layer 300 is blocked using mask plate M4, so
Afterwards with the negtive photoresist of ultraviolet light the 3rd layer 300, mask plate M4 only allows exposure to reinforce the pattern of pin, and after exposure, formation runs through
The reinforcing pin M0 of first negtive photoresist Rotating fields 100 ', the second negtive photoresist Rotating fields 200 ' and the thickness of the 3rd negtive photoresist Rotating fields 300 '.By
In light, more toward bottom, its intensity is weaker, T-TOP effects occurs, it is therefore preferable that the first negtive photoresist Rotating fields 100 ' it is unexposed plus
Gu pin pattern dimension is less than the unexposed reinforcing pin pattern dimension of the second negtive photoresist Rotating fields 200 ', the second negtive photoresist Rotating fields
200 ' unexposed pin pattern dimensions of reinforcing are less than the unexposed reinforcing pin pattern dimension of the 3rd negtive photoresist Rotating fields 300 ', this
Sample is conducive to that the exposure of pin pattern will be reinforced thoroughly, obtains and intactly reinforces pin M0, as shown in Figure 2 g.
All layers of negtive photoresist Rotating fields are carried out development treatment by step S9, the micro-nano structure needed for obtaining.
Development treatment is carried out with developer solution so that the first negtive photoresist Rotating fields 100 ', the second negtive photoresist Rotating fields 200 ' and the 3rd
The respective required pattern of the formation of negtive photoresist Rotating fields 300 '（Such as microchannel）, as shown in fig. 2h.The making of the present embodiment micro-nano structure
Method is that, by multiexposure, multiple exposure, the mode once developed obtains micro-nano structure, so as to be obtained in negtive photoresist Rotating fields thick through it
The reinforcing pin of degree.
It should be noted that above-described embodiment micro-nano structure is provided with three layers of negtive photoresist Rotating fields, however, the present invention does not limit to
In this.In fact, micro-nano structure can include two layers, three layers, four layers, even more layers negtive photoresist Rotating fields.That is, micro-nano
Structure can include N layers of negtive photoresist Rotating fields, and N layers of negtive photoresist Rotating fields are sequentially stacked in the surface of substrate S, N negtive photoresist Rotating fields shapes
The upper surface of Cheng Yu N-1 negtive photoresist Rotating fields.Also, it is preferred that unexposed reinforcing pin pattern dimension in N negtive photoresist Rotating fields
The unexposed reinforcing pin pattern dimension more than or equal in N-1 negtive photoresist Rotating fields.Wherein, N is whole more than or equal to 2
Number.
It should also be noted that, the thickness of every layer of negtive photoresist Rotating fields according to actual needs can be with identical, can also be different.It is negative
It is loop configuration or column construction that glue, which reinforces pin, and the cross sectional shape of loop configuration is polygonal annular, annular or oval ring.
The cross sectional shape of column construction is polygon, circular or ellipse.Moreover, the negtive photoresist of loop configuration, which reinforces pin, is conducive to enhancing
The bond strength of multilayer negtive photoresist Rotating fields, can improve the steadiness and reliability of micro-nano structure.
The preparation method for the micro-nano structure that the present embodiment is provided is that stacked N layer negtive photoresists are once formed in the upper surface of substrate
Rotating fields, and unexposed reinforcing pin pattern is formed in every layer of negtive photoresist Rotating fields, completed in all negtive photoresist Rotating fields
Pin is reinforced by exposing to obtain afterwards, development treatment is finally carried out, i.e., by multiexposure, multiple exposure, once developing to obtain has multilayer group
Close the micro-nano structure of negtive photoresist Rotating fields.The micro-nano structure can improve bond strength between layers by reinforcing pin, from
And improve the steadiness and reliability of whole micro-nano structure.
The present embodiment also provides a kind of micro-nano structure, as shown in figure 3, micro-nano structure includes substrate S and three layers of negtive photoresist layer knot
Structure C1, C2, C3, are provided with multiple reinforcing pin M0 through its thickness, to improve negtive photoresist in layer negtive photoresist Rotating fields C1, C2, C3
Bond strength between Rotating fields C1, C2, C3, so as to improve the steadiness and reliability of whole micro-nano structure.In fig. 3,
It illustrate only the microchannel 302 in the second negtive photoresist Rotating fields C2.In fact, micro-pipe can also be set in other negtive photoresist Rotating fields
Road.Certainly, other micro-structurals in addition to microchannel can also be set in negtive photoresist Rotating fields.
The micro-nano structure that the present embodiment is provided is provided with adding through all negtive photoresist Rotating fields thickness between negtive photoresist Rotating fields
Gu pin, the bond strength between negtive photoresist Rotating fields can be improved by the reinforcing pin, so as to improve whole micro-nano structure
Steadiness and reliability.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of preparation method of micro-nano structure, it is characterised in that comprise the following steps：
Substrate is provided；
The first negtive photoresist layer is formed in the upper surface of the substrate；
The first negtive photoresist layer is exposed, to form the first negtive photoresist Rotating fields on the surface of the substrate, and it is negative described first
The position that reinforcing pin is preset in structural adhesive layer forms unexposed reinforcing pin pattern；
The second negtive photoresist layer is formed in the upper surface of the first negtive photoresist Rotating fields；
The second negtive photoresist layer is exposed, to form the second negtive photoresist Rotating fields in the upper surface of the first negtive photoresist Rotating fields, and is made
The position that reinforcing pin is preset in the second negtive photoresist Rotating fields forms unexposed reinforcing pin pattern；
Obtain stacked N layer negtive photoresist Rotating fields successively in the upper surface of substrate in this way, N negtive photoresist Rotating fields are formed at N-
The upper surface of 1 negtive photoresist Rotating fields；
The position that pin is reinforced to being preset in the N layers of negtive photoresist Rotating fields is disposably exposed, in the N layers of negtive photoresist Rotating fields
Middle formed reinforces pin；
Negtive photoresist Rotating fields described to all layers carry out development treatment；
Wherein, N is the integer more than or equal to 2.
2. the preparation method of micro-nano structure according to claim 1, it is characterised in that unexposed in N negtive photoresist Rotating fields
Reinforcing pin pattern dimension be more than or equal to N-1 negtive photoresist Rotating fields in it is unexposed reinforcing pin pattern dimension.
3. the preparation method of micro-nano structure according to claim 1, it is characterised in that the substrate is silicon substrate, glass
Substrate or ceramic substrate.
4. the preparation method of micro-nano structure according to claim 1, it is characterised in that the thickness of every layer of negtive photoresist Rotating fields
Spend for 50 nanometers -500 microns.
5. the preparation method of micro-nano structure according to claim 4, it is characterised in that the thickness of every layer of negtive photoresist Rotating fields
Spend for 1 micron -500 microns.
6. the preparation method of micro-nano structure according to claim 1, it is characterised in that the thickness of the N layers of negtive photoresist Rotating fields
Degree is identical.
7. the preparation method of micro-nano structure according to claim 1, it is characterised in that the thickness of the N layers of negtive photoresist Rotating fields
Degree is different.
8. the preparation method of micro-nano structure according to claim 1, it is characterised in that the reinforcing pin is loop configuration
Or column construction.
9. the preparation method of micro-nano structure according to claim 8, it is characterised in that the cross sectional shape of the loop configuration
For polygonal annular, annular, oval ring；The cross sectional shape of the column construction is polygon, circular or ellipse.
10. a kind of micro-nano structure, including substrate and the multilayer negtive photoresist Rotating fields for being stacked in the substrate top surface, its feature exist
In provided with pin is reinforced between the multilayer negtive photoresist Rotating fields, to reinforce the adhesion between the negtive photoresist Rotating fields, institute
Micro-nano structure is stated to obtain by the preparation method of the micro-nano structure described in claim 1-9 any one.
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| CN106142292A (en) * | 2016-06-29 | 2016-11-23 | 电子科技大学 | A kind of preparation method of the ultra-thin green band being applied to common burning porcelain technology |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1988130A (en) * | 2005-12-24 | 2007-06-27 | 国际商业机器公司 | Method for fabricating dual damascene structures |
| CN101038440A (en) * | 2006-03-15 | 2007-09-19 | 岛尼尔公司 | Process for fabricating a monolayer or multilayer metal structure in LIGA technology, and structure obtained |
| CN201060371Y (en) * | 2007-07-23 | 2008-05-14 | 深圳新飞通光电子技术有限公司 | Simple mask plate turnover fixture |
| CN102147569A (en) * | 2010-12-02 | 2011-08-10 | 天津海鸥表业集团有限公司 | Processing method of micro-component in multi-layer structure and solidified SU-8 photoresist sheet |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100003623A1 (en) * | 2008-07-03 | 2010-01-07 | United Microelectronics Corp. | Method of patterning multiple photosensitive layers |
| US8536031B2 (en) * | 2010-02-19 | 2013-09-17 | International Business Machines Corporation | Method of fabricating dual damascene structures using a multilevel multiple exposure patterning scheme |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1988130A (en) * | 2005-12-24 | 2007-06-27 | 国际商业机器公司 | Method for fabricating dual damascene structures |
| CN101038440A (en) * | 2006-03-15 | 2007-09-19 | 岛尼尔公司 | Process for fabricating a monolayer or multilayer metal structure in LIGA technology, and structure obtained |
| CN201060371Y (en) * | 2007-07-23 | 2008-05-14 | 深圳新飞通光电子技术有限公司 | Simple mask plate turnover fixture |
| CN102147569A (en) * | 2010-12-02 | 2011-08-10 | 天津海鸥表业集团有限公司 | Processing method of micro-component in multi-layer structure and solidified SU-8 photoresist sheet |
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